JPS61163663A - Transistor element - Google Patents
Transistor elementInfo
- Publication number
- JPS61163663A JPS61163663A JP60003603A JP360385A JPS61163663A JP S61163663 A JPS61163663 A JP S61163663A JP 60003603 A JP60003603 A JP 60003603A JP 360385 A JP360385 A JP 360385A JP S61163663 A JPS61163663 A JP S61163663A
- Authority
- JP
- Japan
- Prior art keywords
- electron transfer
- transfer protein
- membrane
- protein
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/701—Organic molecular electronic devices
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、トランジスタ特性又はスイッチング特性を
持つトランジスタ素子に関するもので、これを利用した
集積回路分野に係わり、生体材料を構成材料として用い
ることにより、トランジスタ素子サイズを生体分子レベ
ルの超微細な大きさく数十〜数百Ａ）に近づけるように
して、高密度・高速化を図るものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a transistor element having transistor characteristics or switching characteristics, and relates to the field of integrated circuits using the transistor element, and is related to the field of integrated circuits that utilize this transistor element. , the transistor element size is brought closer to the ultra-fine size (several tens to hundreds of amperes) at the level of biomolecules, thereby achieving high density and high speed.
従来、集積回路に用いられているトランジスタ素子とし
ては、第５図に示す電界効果型トランジスタ（ＦＥＴ）
があった。図において、（１）はｎ形シリコン基板、（
２）はチャンネル領域、（３）はＰ＋層、（４）はｓｉ
ｏ鵞膿、（５）はソース電極、（６）はゲート電極、（
７）はドレイン電極である。この従来のＦＥＴをトラン
ジスタ動作又はスイッチング動作として作用させるには
、ゲート電極により印加するゲー）［圧の制御により行
う。即ち、ゲート電圧によってソース電極（５）とドレ
イン電極（７）間の表面層における電流キャリア数が変
化し電流が制御される。Conventionally, as a transistor element used in an integrated circuit, a field effect transistor (FET) shown in Fig. 5 is used.
was there. In the figure, (1) is an n-type silicon substrate, (
2) is the channel region, (3) is the P+ layer, (4) is the si
(5) is the source electrode, (6) is the gate electrode, (
7) is a drain electrode. In order to operate this conventional FET as a transistor operation or a switching operation, it is performed by controlling the voltage applied by the gate electrode. That is, the number of current carriers in the surface layer between the source electrode (5) and the drain electrode (7) changes depending on the gate voltage, and the current is controlled.
従来のＦＥＴは以上のように構成されているため、微細
加工が可能であり、現在では２５６にピッ）ＬＳＩが実
用されている。素子のメモリ容量と演算速度を上昇させ
るには、素子そのものの超微細化が不可欠であるが、一
方で８１を用いる素子では０．２μｍ程度の超微細パタ
ーンで電子の平均自由行程と素子スケールとがほぼ等し
くなり、素子の独立性が保たれなくなるという限界を抱
えている。このように、発展を続けているシリコンテク
ノロジーも、何れは壁に突きあたることが予想されるた
めに、０．２μｍの壁を越見る新しい原理に基づくＶＬ
ＳＩが求められている。Since the conventional FET is configured as described above, microfabrication is possible, and currently 256-inch LSIs are in practical use. In order to increase the memory capacity and calculation speed of devices, it is essential to make the devices themselves ultra-fine. On the other hand, in devices using 81, ultra-fine patterns of about 0.2 μm are used to improve the mean free path of electrons and the device scale. The problem is that the elements become almost equal, and the independence of the elements cannot be maintained. In this way, silicon technology, which continues to develop, is expected to eventually hit a wall, so VL based on a new principle that goes beyond the 0.2 μm wall
SI is required.
この発明は、上記のような従来の集積回路におけるトラ
ンジスタ素子の微細化の限界を除去す・るためになされ
たもので、生体材料を構成材料として用いることにより
、トランジスタ素子サイズを生体分子レベルの超微細な
大きさに近づけるようにして、高密度・高速化を図ろう
とするものである。This invention was made to eliminate the limitations of miniaturization of transistor elements in conventional integrated circuits as described above, and by using biomaterials as constituent materials, the size of transistor elements can be reduced to the level of biomolecules. The aim is to achieve high density and high speed by approaching ultra-fine size.
この発明のトランジスタ素子は、電子伝達蛋白質で作成
された第１電子伝達蛋白質膜、上記電子伝達蛋白質のレ
ドックス電位と異なるレドックス電位を有する電子伝達
蛋白質で作成され、第１電子伝達蛋白質膜に累積して接
着接合された第２電子伝達蛋白質膜、第２電子伝達蛋白
質膜を作成する電子伝達蛋白質のレドックス電位と異な
るレドックス電位を有する電子伝達蛋白質で作成され第
２電子伝達蛋白質膜に累積して接着接合された第３電子
伝達蛋白質膜、第１電子伝達蛋白質膜に接続される電極
、第２電子伝達蛋白質膜に電気的影響を与える電極、及
び第３電子伝達蛋白質膜に接続される電極を備え、各電
子伝達蛋白質のレドックス電位の違いを利用してトラン
ジスタ特性及ヒスイツチング特性のいずれかを発生させ
るようにしたものである。The transistor element of the present invention includes a first electron transfer protein film made of an electron transfer protein, an electron transfer protein made of an electron transfer protein having a redox potential different from the redox potential of the electron transfer protein, and an electron transfer protein film that accumulates on the first electron transfer protein film. The second electron transfer protein membrane is adhesively bonded to the second electron transfer protein membrane, and the second electron transfer protein membrane is made of an electron transfer protein having a redox potential different from the redox potential of the electron transfer protein that creates the second electron transfer protein membrane, and is cumulatively adhered to the second electron transfer protein membrane. comprising a joined third electron transfer protein membrane, an electrode connected to the first electron transfer protein membrane, an electrode that electrically affects the second electron transfer protein membrane, and an electrode connected to the third electron transfer protein membrane. , the difference in redox potential of each electron transfer protein is used to generate either transistor characteristics or hisswitching characteristics.
この発明は、レドックス電位の異なる少なくとも２種類
の電子伝達蛋白質を構成材料として用いるので、トラン
ジスタ素子サイズを生体分子レベルの超微細な大きさに
近づけることが可能となり、高密度・高速化が図られる
。Since this invention uses at least two types of electron transfer proteins with different redox potentials as constituent materials, it is possible to bring the transistor element size closer to the ultra-fine size at the biomolecule level, resulting in higher density and higher speed. .
以下、この発明の原理及び作用を図について説明する・
微生物の生体膜及び高等生物のミトコンドリアの内膜中
には、それぞれ機能は異なるが１Ｈｔ、有機酸、 ＮＡ
Ｄ（Ｐ）Ｈ（Ｎｉｃｏｔｉｎｅａｍｉｄｅ Ａｄｅｎｉ
ｎｅＤｉｎｕｃｌｅｏｔｉｄｅ （Ｐｈｏｓｐｈａｔｅ
） ）などの還元性の化学物質から電子を引き抜く酵
素蛋白質と共に、その電子を生体膜の定められた方向に
運ぶ電子伝達能を有する蛋白質（電子伝達蛋白質と称す
）が複数種類存在している。これらの電子伝達蛋白質は
、生体膜中に、一定の配向性をもって埋め込まれ、分子
間で電子伝達が起こるように特異的な分子間配置をとっ
ている。このように電子伝達蛋白質は、生体膜中で精巧
な配置をもって連鎖状に並んでいるため、電子を蛋白質
連鎖に沿って流すことが可能で、電子の動きを分子レベ
ルで制御することができる。第５図に電子伝達蛋白質の
連鎖（電子伝達系）の１例としてミトコンドリアの内膜
の電子伝達系を模式的に示す。図において、（８）はミ
トコンドリアの内膜、（９）は電子伝達蛋白質（ＮＡＤ
Ｈ−Ｑ還元酵素）、顛は電子伝達蛋白質（コハク酸脱水
素酵素）１（ロ）は電子伝達蛋白質（チトクロームｂ）
、（２）は電子伝達蛋白質（チトクロームｃｔ）、Ｑ３
は電子伝達蛋白質（チトクロームＣ）、Ｑ４は電子伝達
蛋白質（チトクロームａ）、（至）は電子伝達蛋白質（
チトクロームａ３）である。又、図中矢印は電子の流れ
る方向を示すものであり、人口側の（Ｌ）はＮＡＤＨ％
岡はコハク酸でありそれぞれ還元性の有機物である。又
、出口側（ロ）では電子は最終的に酸素に渡され、水を
生ずる。The principle and operation of this invention will be explained below with reference to the figures.
The biological membranes of microorganisms and the inner membranes of mitochondria of higher organisms contain 1Ht, organic acids, and NA, although their functions differ.
D(P)H (Nicotineamide Adeni
neDinucleotide (Phosphate)
In addition to enzyme proteins that extract electrons from reducing chemicals such as ), there are several types of proteins (referred to as electron transfer proteins) that have the ability to transfer electrons to biological membranes in a defined direction. These electron transfer proteins are embedded in biological membranes with a certain orientation and have a specific intermolecular arrangement so that electron transfer occurs between molecules. In this way, electron transport proteins are arrayed in a chain in a sophisticated arrangement in biological membranes, making it possible for electrons to flow along protein chains and controlling the movement of electrons at the molecular level. FIG. 5 schematically shows an electron transport chain in the inner membrane of a mitochondria as an example of a chain of electron transport proteins (electron transport chain). In the figure, (8) is the inner membrane of the mitochondria, and (9) is the electron transport protein (NAD).
HQ reductase), second is electron transfer protein (succinate dehydrogenase) 1 (b) is electron transfer protein (cytochrome b)
, (2) is electron transfer protein (cytochrome ct), Q3
is electron transfer protein (cytochrome C), Q4 is electron transfer protein (cytochrome a), (to) is electron transfer protein (
It is cytochrome a3). Also, the arrows in the figure indicate the direction of electron flow, and (L) on the population side is NADH%.
Oka is succinic acid, which is a reducing organic substance. Furthermore, on the exit side (b), the electrons are finally transferred to oxygen, producing water.
第５図に示した電子伝達蛋白質は電子伝達時に酸化還元
（レドックス）反応を伴い、各電子伝達蛋白質のレドッ
クス電位の負方向の準位から正方向の準位へと電子を流
すことができる。The electron transfer proteins shown in FIG. 5 involve an oxidation-reduction (redox) reaction during electron transfer, and electrons can flow from a level in the negative direction of the redox potential of each electron transfer protein to a level in the positive direction.
一方、最近の知見によれば、生体内（ｉｎ ｖｉｂｏ）
で存在している電子伝達蛋白質複合体以外においても生
体外（ｉｎ ｖｉｔｒｏ ）で電子伝達を起こすことが
可能な相互に特異的な構造配置をもつ電子伝達複合体を
形成することが可能であることが示されている。On the other hand, according to recent findings, in vivo
It is possible to form electron transfer complexes with mutually specific structural arrangements that are capable of causing electron transfer in vitro, in addition to the electron transfer protein complexes that exist in the human body. It is shown.
そこで本発明者は、適当なレドックス電位をもつ電子伝
達蛋白質を２種類（Ａ及びＢ）用い、Ａ−Ｂ−Ａと８層
累積させることにより、それらのレドックス電位の違い
を利用してトランジスタ特性又はスイッチング特性を生
ずる接合を形成できることに着目してこの発明を創作し
た。Therefore, the present inventor used two types of electron transport proteins (A and B) with appropriate redox potentials, and by stacking them in 8 layers A-B-A, we utilized the difference in their redox potentials to improve transistor properties. The present invention was created by focusing on the fact that it is possible to form a junction that produces switching characteristics.
第４図にＡ−Ｂ−Ａ型電子伝達蛋白質複合体の模式図と
そのレドックス電位を示す。このＡ−Ｂ−Ａ型電子伝達
蛋白質複合体のレドックス電位はｎ型半導体とｎ型半導
体との組合せによるｐ−ｎ−ｐ接合と類似の性質を示し
、トランジスタ特性又はスイッチング特性をもつことが
期待できる。FIG. 4 shows a schematic diagram of an A-B-A type electron transfer protein complex and its redox potential. The redox potential of this A-B-A type electron transfer protein complex exhibits properties similar to a p-n-p junction formed by a combination of two n-type semiconductors, and is expected to have transistor or switching characteristics. can.
又、電子伝達蛋白質として３種類（Ａ、Ｂ及びＣ）用い
１ＡＢ−Ｃと８層累積させても上記と同様の効果が期待
できる。Furthermore, the same effect as above can be expected even if three types (A, B, and C) of electron transfer proteins are used and 1AB-C is stacked in 8 layers.
この発明の実施例を図をもとに説明する。第１図はこの
発明の一実施例のトランジスタ素子を組込んだ装置を示
す模式的断面構成図で、（２）はガラス製基板、（Ｌη
はＡｇ ＊ Ａｕ ＊ Ａｌなどの金属製電極で、基板
α・上に複数条が平行に形成されている。（ト）は電子
伝達蛋白質であるフラボドキシンで作成された第１電子
伝達蛋白質膜で、複数条の電極αη上に形成されている
。曽は複数条の平行電極Ｑηと直角方向に形成された複
数条の平行電極で、第１電子伝達蛋白質膜（至）上に形
成されている。０１は電子伝達蛋白質であるチトクロー
ムＣで作成された第２電子伝達蛋白質膜で、第１電子伝
達蛋白質膜（至）に累積して接着接合され、電極（４）
に接合されている。Embodiments of the invention will be described with reference to the drawings. FIG. 1 is a schematic cross-sectional configuration diagram showing a device incorporating a transistor element according to an embodiment of the present invention, (2) is a glass substrate, (Lη
is a metal electrode such as Ag*Au*Al, and a plurality of strips are formed in parallel on the substrate α. (G) is a first electron transfer protein membrane made of flavodoxin, which is an electron transfer protein, and is formed on the plurality of electrodes αη. A plurality of parallel electrodes formed perpendicularly to the plurality of parallel electrodes Qη is formed on the first electron transfer protein membrane. 01 is a second electron transfer protein membrane made of cytochrome C, which is an electron transfer protein, which is cumulatively adhesively bonded to the first electron transfer protein membrane (to) and is attached to the electrode (4).
is joined to.
（２）は電子伝達蛋白質であるフラボドキシンで作成さ
れた第３電子伝達蛋白質膜で、第２電子伝達蛋白質膜ｏ
嗜に累積して接着接合されている。（２）は複数条の平
行電極（ホ）と直角方向に形成され１こ複数条の平行電
極で、第３電子伝達蛋白質膜（２）１筈こ形成されてい
る。第２図は、形成したトランジスタ素子を組込んだ装
置を分解して示す分解斜視図である。(2) is a third electron transfer protein membrane made of flavodoxin, an electron transfer protein;
They are cumulatively adhesively bonded. (2) is formed in a direction perpendicular to the plurality of parallel electrodes (E), and one or more parallel electrodes are formed in the third electron transfer protein membrane (2). FIG. 2 is an exploded perspective view showing an exploded device incorporating the formed transistor element.
電子伝達蛋白質としてチトクロームＣとフラボドキシン
を用いて単分子膜及びそれらの累積膜の作成法としては
著明なＬａｎｇｍｕｉｒ −Ｂｌｏｄｇｅｔｔ法がある
０詳細は・（イ）Ｉｗｉｎｇ Ｌａｎｇｍｕｉｒ ；電
気学会雑誌、第５６巻、 ２０４〜２１８頁、昭和１０
年４月、（ｏｌ Ｋ、 Ｂｌｏｄｇｅｔｔ： Ｊｏｕｒ
ｎａｌ ｏｆ Ａｍｅｒｉｃａｎ Ｃｈｅｍｉｃａｌ
８ｏｃｉｅｔｙ ＋ Ｖｏｌ ５７ ＊Ｐ １０Ｇ７
、１９８５ 年、Ｈ杉Ｍ夫’） 、固体物ｆＭ −Ｍｏ
ｌ １７゜Ｐ ７４４〜７５２ 、１９８２ 執に）Ｊ
ｏｕｒｎａｌ ｏｆ Ｃｏ１１ｏｉｄ ａｎｄＩｎｔｅ
ｒｆａｃｅ ８ｃｉｅｎｃｅ ＊ Ｖｏｌ ６８ ＋
Ｐ ４７１〜４７７ ＋ １９７９年などに記載されて
いる。−例を説明すると、水層の水面に７ラボドキシン
溶液を滴下し、水面にフラボドキシンの単分子、嘆を形
成する。フラボドキシン膜を形成した水槽にｔＦＭａη
を形成した基板α０を垂直に挿入し浸して行くと、電極
αηを有する基板α・に７ラボドキシン嘆が付着し、接
合し、第１電子伝達蛋白質膜これを取り出す。なお、基
板Ｑ０を水槽に挿入し浸していたが、逆に水面下から垂
直に引上げるようにしても基板αｅ上ｆこフラボドキシ
ン膜が付着し、接合される。基板α・の第１電子伝達蛋
白質膜（至）上に金属薄膜をイオンビーム法、分子線法
、蒸着法などを利用して電子伝達蛋白質が破壊されない
ほどの低温で作成し電極翰を得る。The Langmuir-Blodgett method is a prominent method for producing monolayers and their cumulative films using cytochrome C and flavodoxin as electron transport proteins. For details: (a) Iwing Langmuir; Journal of the Institute of Electrical Engineers of Japan, Vol. 56 , pp. 204-218, Showa 10
April, (ol K, Blodgett: Jour
nal of American Chemical
8ociety + Vol 57 *P 10G7
, 1985, H Sugi M'), solid object fM -Mo
l 17゜P 744-752, 1982) J
Our own of Co11oid and Inte
rface 8science * Vol 68 +
P 471-477 + 1979, etc. - To explain an example, a flavodoxin solution is dropped onto the water surface of an aqueous layer, and a single molecule of flavodoxin is formed on the water surface. Add tFMaη to the aquarium in which a flavodoxin film has been formed.
When the substrate α0 formed with the electrode α0 is vertically inserted and immersed, 7-Labadoxin adheres and bonds to the substrate α· having the electrode αη, and the first electron transfer protein film is taken out. Note that although the substrate Q0 was inserted into a water tank and immersed, the flavodoxin film would adhere to and bond to the substrate αe even if the substrate Q0 was pulled up vertically from below the water surface. A metal thin film is formed on the first electron transfer protein film of the substrate α using an ion beam method, a molecular beam method, a vapor deposition method, etc. at a low temperature that does not destroy the electron transfer protein to obtain an electrode.
続いて、水槽の水面にチトクロームＣ溶液を滴下し、水
面にチトクロームＣの単分子膜を形成する。Subsequently, a cytochrome C solution is dropped onto the water surface of the aquarium to form a monomolecular film of cytochrome C on the water surface.
先に第１電子伝達蛋白質膜（至）と電極（１）が作成さ
れた基板ａ・を、チトクロームＣの膜を有する水槽に垂
直に挿入し浸して行くと、第１電子伝達蛋白質膜（至）
上にチトクロームＣ膜が付着し接合し、電極曽に接合し
た第２電子伝達蛋白質膜０１が作成される。これを取り
出す。同様にして、基板α１の第２電子伝達蛋白質膜Ｑ
嗜上にフラボドキシン膜を付着し接合し、第３電子伝達
蛋白質膜（財）を作成し、さらにこの上に電極（イ）を
作成する。When the substrate a, on which the first electron transfer protein film (1) and the electrode (1) have been formed, is vertically inserted into a water tank having a cytochrome C film and immersed, the first electron transfer protein film (1) is formed. )
A cytochrome C membrane is attached and bonded thereon, thereby creating a second electron transfer protein membrane 01 bonded to the electrode. Take this out. Similarly, the second electron transport protein film Q of the substrate α1
A flavodoxin membrane is attached and bonded to the upper surface to form a third electron transfer protein membrane (material), and an electrode (a) is further formed on this.
なお１電子伝達蛋白質膜は、単分子膜であってもよいが
１別の電子伝達蛋白質膜を重ねたものでもよい。但し、
重ねた電子伝達蛋白質膜を形成する両電子伝達蛋白質間
のレドックス電位差は、例えば第１電子伝達蛋白質膜の
ときは、第１電子伝達蛋白質膜の電子伝達蛋白質と、第
２電子伝達蛋白質膜の電子伝達蛋白質とのレドックス電
位差より小さいものが選定されている。各種の電子伝達
蛋白質のレドックス電位は高野常広著；蛋白質核酸酵素
１２７ 、 Ｐ １５４８ 、１９８２年に記載されて
おり、チトクロームＣとフラボドキシンのレドックス電
位差は約６６５ｍＶである。又水面に滴下する電子伝達
蛋白質溶液に予め脂質及び脂肪酸のいずれかを混合し、
混合溶液を水面に滴下し、水置換を形成し、これを基板
に付着接合させると、電子伝達蛋白質膜の配向が整えら
れ、上記脂質又は脂肪酸は蛋白質分子の支えとなる。Note that one electron transfer protein membrane may be a monomolecular membrane, but it may also be one in which another electron transfer protein membrane is stacked. however,
For example, in the case of the first electron transfer protein membrane, the redox potential difference between the two electron transfer proteins forming the stacked electron transfer protein membrane is the difference between the electron transfer protein in the first electron transfer protein membrane and the electron transfer protein in the second electron transfer protein membrane. One is selected that has a redox potential difference smaller than that of the transmission protein. The redox potential of various electron transfer proteins is described in Tsunehiro Takano, Protein Nucleic Acid Enzyme 127, P 1548, 1982, and the redox potential difference between cytochrome C and flavodoxin is about 665 mV. In addition, either lipid or fatty acid is mixed in advance with the electron transfer protein solution that is dropped onto the water surface.
When the mixed solution is dropped onto the water surface to form water displacement and adhered to the substrate, the orientation of the electron transport protein membrane is adjusted, and the lipids or fatty acids support the protein molecules.
又、ム製電極と電子伝達蛋白質間の電子の授受を良好に
するためには、Ａｕ電極を４，４′−ビビリジＮ （ｂ
ｉｐｙｒｉｄｇｌ ）、２，２′−ビピリジルなどで化
学修飾しておくとよい。In addition, in order to improve the transfer of electrons between the aluminum electrode and the electron transfer protein, the Au electrode is made of 4,4'-biviridiN (b
It is preferable to chemically modify it with 2,2'-bipyridyl, etc.
第１図において、電極αηと四間に第１電子伝達蛋白質
膜が介在しているが、第１電子伝達蛋白質膜だけであれ
ば、誘電体として作用するので、両電＊ａ′ｈと（１）
間の絶縁は保たれる。第１．第２及び第３電子伝達蛋白
質膜が、配向を整えて累積し接着接合すると電極αηと
（イ）間の電子の授受が可能となる。第２電子伝達蛋白
質膜に対して電極（１）は絶縁的であるが、電圧的影響
を与えることができ、電圧を印加する働きをする。従っ
て電極勾は従来のＦＥＴのゲート電極に相当し、電極α
ηに）はソース電極、ドレインｔＷに相当する。In Fig. 1, the first electron transfer protein film is interposed between the electrodes αη and 4, but if only the first electron transfer protein film was present, it would act as a dielectric, so both the electric currents *a′h and ( 1)
The insulation between them is maintained. 1st. When the second and third electron transfer protein films are aligned, accumulated, and adhesively bonded, it becomes possible to transfer electrons between the electrodes αη and (A). Although the electrode (1) is insulating with respect to the second electron transfer protein membrane, it can exert a voltage influence and functions to apply a voltage. Therefore, the electrode slope corresponds to the gate electrode of a conventional FET, and the electrode α
η) corresponds to the source electrode and drain tW.
第３図（イ）はこの発明のトランジスタ素子の電圧印加
状態を示す模式図で、（ロ）はこのときの各電子伝達蛋
白質膜のレドックス電位状態を示す図である。電＠ｏ７
）と勾との間に電極Ｑη側を正として、電圧ｖ１を印加
し、電極（１）と（２）との間に電極（１）側を正とし
て電圧ｖｔを印加すると、レドックス電圧状態は第３図
（ロ）の実線のように変化する。破線は電圧印加前の状
態を示しており、ｖｏはチトクロームＣとフラボドキシ
ンのレドックス電位の差であす約１２６５ｍＶである。FIG. 3(A) is a schematic diagram showing the voltage application state of the transistor element of the present invention, and FIG. 3(B) is a diagram showing the redox potential state of each electron transfer protein membrane at this time. Den@o7
) and the gradient, applying a voltage v1 with the electrode Qη side being positive, and applying a voltage vt between electrodes (1) and (2) with the electrode (1) side being positive, the redox voltage state is It changes as shown by the solid line in Figure 3 (b). The broken line shows the state before voltage application, and vo is the difference in redox potential between cytochrome C and flavodoxin, which is about 1265 mV.
上記構成及び電圧印加によるレドックス電位の変化は、
従来の半導体トランジスタ（ｐ−ｎ−ｐ接合タイプ）と
同様と考えられ、上記構成によりトランジスタ特性が分
子レベルの素子として実現される。Changes in redox potential due to the above configuration and voltage application are as follows:
It is considered to be similar to a conventional semiconductor transistor (p-n-p junction type), and the above structure realizes transistor characteristics as a molecular-level element.
なお電子伝達蛋白質への電子の供給に酵素を利用するよ
うにしてもよい。Note that an enzyme may be used to supply electrons to the electron transfer protein.
又電子伝達蛋白質としては、非ヘム−鉄・硫黄蛋白質、
チトクロームＣ系蛋白質、チトクロームｂ系蛋白質、フ
ラボドキシン、プラストシアニン、チオレドキシンなど
があり、これらから選別される第１電子伝達蛋口質、第
２電子伝達蛋白質及び第３電子伝達蛋白質の組合せは、
分子間に対する配向と、電極が形成された基板に対する
配向が電子伝達に対してｖ４適するものが選定される。Electron transport proteins include non-heme iron and sulfur proteins,
There are cytochrome C-based proteins, cytochrome B-based proteins, flavodoxin, plastocyanin, thioredoxin, etc., and the combination of the first electron transfer protein, second electron transfer protein, and third electron transfer protein selected from these is:
The orientation between molecules and the orientation with respect to the substrate on which the electrodes are formed are selected to be V4 suitable for electron transfer.
又上述したトランジスタ素子は２種類の蛋白質の累積膜
として説明したが、８種類以上の蛋白質の累積膜として
作成してもよい。Furthermore, although the transistor element described above has been described as a cumulative film of two types of proteins, it may be formed as a cumulative film of eight or more types of proteins.
又異種電子伝達蛋白質間相互作用の特異性を利用して、
電子伝達蛋白質分子単位で、累積膜に垂直な方向に電子
を流し、上記累積膜に水平方行の隣接する電子伝達蛋白
質分子間では電子の授受が起らないように、同種電子伝
達蛋白質膜内及び異種電子伝達蛋白質膿間で電子伝達蛋
白質を所定の分子配置をとるようにＬａｎｇｍｕｉｒ
−Ｂｌｏｄｇｅｔｔ 法ｆｚどで配向させることが望ま
しい。In addition, by utilizing the specificity of the interaction between different electron transfer proteins,
Electrons flow in the direction perpendicular to the cumulative film in units of electron transport protein molecules. and Langmuir so that the electron transfer protein takes a predetermined molecular arrangement between different types of electron transfer proteins.
- It is desirable to orient by Blodgett method fz or the like.
以上説明したように、この発明のトランジスタ素子は電
子伝達蛋白質で作成された第１電子伝達蛋白質膜、上記
電子伝達蛋白質のレドックス電位と異なるレドックス電
位を有する電子伝達蛋白質で作成され、第１電子伝達蛋
白質膜に累積して接着接合された第２電子伝達蛋白質膜
、第２電子伝達蛋白質膜を作成する電子伝達蛋白質のレ
ドックス電位と異なるレドックス電位を有する電子伝達
蛋白質で作成され第２電子伝達蛋白質膜に累積して接着
接合された第３電子伝達蛋白質膜、第１電子伝達蛋白質
膜に接続される電極、第２［子伝達蛋白質膜に電気的影
響を与える電極、及び第３を子伝達蛋白質膜に接続され
る電極を備え、各電子伝達蛋白質のレドックス電位の違
いを利用してトランジスタ特性及びスイッチング特性の
いずれかを発生させるようにしたので、トランジスタ素
子サイズを生体分子レベルの超微細な大きさに近づける
ようにして、高密度・高速化が可能となる。As explained above, the transistor element of the present invention includes a first electron transfer protein film made of an electron transfer protein, an electron transfer protein film made of an electron transfer protein having a redox potential different from that of the electron transfer protein, and a first electron transfer protein film made of an electron transfer protein having a redox potential different from that of the electron transfer protein. a second electron transfer protein membrane cumulatively adhesively bonded to the protein membrane; a second electron transfer protein membrane made of an electron transfer protein having a redox potential different from the redox potential of the electron transfer protein forming the second electron transfer protein membrane; a third electron transfer protein membrane cumulatively bonded to the electron transfer protein membrane, an electrode connected to the first electron transfer protein membrane, a second electrode that electrically influences the child transfer protein membrane, and a third electrode connected to the child transfer protein membrane. By using the difference in the redox potential of each electron transfer protein to generate either the transistor characteristics or the switching characteristics, the transistor element size can be reduced to ultra-fine size at the biomolecule level. By bringing it closer to , it becomes possible to achieve higher density and higher speed.
第１図は、この発明の一実施例のトランジスタ素子が組
込まれた装置を示す模式的断面構成図、第２図は、この
発明の一実施例のトランジスタ素子が組込まれた装置の
分解斜視図、第３図（イ）は、この発明のトランジスタ
素子の電圧印加状態を示す模式図で、第３図（ロ）はこ
のときの各電子伝達蛋白賞嘆のレドックス電位状態を示
す図、第４図は電子伝達蛋白質複合体の模式図とそのレ
ドックスを位を示す図、第５図はミトコンドリアの内膜
の電子伝達系を示す模式図、第５図は従来の電界効果型
トランジスタ素子を示す断面図である。
図において、ＯＦ３は基板、ａη（ホ）（２）は電極、
（至）０１０１）はそれぞれ第１．第２．第３電子伝達
蛋白質膜である。
なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a schematic cross-sectional configuration diagram showing a device incorporating a transistor element according to an embodiment of the present invention, and FIG. 2 is an exploded perspective view of a device incorporating a transistor element according to an embodiment of the present invention. , FIG. 3(a) is a schematic diagram showing the voltage application state of the transistor element of the present invention, FIG. 3(b) is a diagram showing the redox potential state of each electron transfer protein at this time, and FIG. The figure is a schematic diagram of an electron transport protein complex and its redox position. Figure 5 is a schematic diagram of the electron transport chain in the inner membrane of mitochondria. Figure 5 is a cross section of a conventional field effect transistor element. It is a diagram. In the figure, OF3 is the substrate, aη(E)(2) is the electrode,
(to) 0101) are respectively the 1st. Second. This is the third electron transport protein membrane. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
膜、上記電子伝達蛋白質のレドックス電位と異なるレド
ックス電位を有する電子伝達蛋白質で作成され、第１電
子伝達蛋白質膜に累積して接着接合された第２電子伝達
蛋白質膜、第２電子伝達蛋白質膜を作成する電子伝達蛋
白質のレドックス電位と異なるレドックス電位を有する
電子伝達蛋白質で作成され第２電子伝達蛋白質膜に累積
して接着接合された第３電子伝達蛋白質膜、第１電子伝
達蛋白質膜に接続される電極、第２電子伝達蛋白質膜に
電気的影響を与える電極、及び第３電子伝達蛋白質膜に
接続される電極を備え、各電子伝達蛋白質のレドックス
電位の違いを利用してトランジスタ特性及びスイッチン
グ特性のいずれかを発生させるようにしたトランジスタ
素子。 （２）電子伝達蛋白質は、非ヘム−鉄・硫黄蛋白質、チ
トクロームｃ系蛋白質、チトクロームｂ系蛋白質、フラ
ボドキシン、プラストシアニン、及びチオレドキシンの
うちから選定される特許請求の範囲第１項記載のトラン
ジスタ素子。 （３）電子伝達蛋白質膜は単分子膜である特許請求の範
囲第１項記載のトランジスタ素子。 （４）電子伝達蛋白質への電子の供給に酵素を利用する
ようにした特許請求の範囲第１項記載のトランジスタ素
子。 （５）電子伝達蛋白質膜には、金属電極を設けたことを
特徴とする特許請求の範囲第１項記載のトランジスタ素
子。 （６）電子伝達蛋白質膜に設けた電極は、金属電極であ
り、かつ金属電極を有機分子で化学修飾した化学修飾電
極を用いるようにした特許請求の範囲第５項記載のトラ
ンジスタ素子。 （７）異種電子伝達蛋白質間相互作用の特異性を利用し
て、電子伝達蛋白質分子単位で、累積膜に垂直な方向に
電子を流し、上記累積膜に水平方向の隣接する電子伝達
蛋白質分子間では電子の授受が起らないように、同種電
子伝達蛋白質膜内及び異種電子伝達蛋白質膜間で電子伝
達蛋白質を所定の分子配置をとるように配向させること
を特徴とする特許請求の範囲第１項記載のトランジスタ
素子。（８）電子伝達蛋白質の配向用支持体として、脂
質及び脂肪酸のいずれかを用いた特許請求の範囲第１項
記載のトランジスタ素子。 （９）第１電子伝達蛋白質膜に接続される電極と、第２
電子伝達蛋白質膜に接続される電極とは互に直角に配置
するようにした特許請求の範囲第１項記載のトランジス
タ素子。 （１０）第１及び第２電子伝達蛋白質膜に接続される電
極は、それぞれ複数の平行な線状電極群である特許請求
の範囲第９項記載のトランジスタ素子。（１１）第２電
子伝達蛋白質膜に接続される電極と、第３電子伝達蛋白
質膜に接続される電極とは互に直角に配置するようにし
た特許請求の範囲第１項記載のトランジスタ素子。 （１２）第２及び第３電子伝達蛋白質膜に接続される電
極は、それぞれ複数の平行な線状電極群である特許請求
の範囲第１１項記載のトランジスタ素子。[Scope of Claims] (1) A first electron transfer protein membrane made of an electron transfer protein; a first electron transfer protein membrane made of an electron transfer protein having a redox potential different from that of the electron transfer protein; The second electron transfer protein membrane is cumulatively adhered to the second electron transfer protein membrane. a third electron transfer protein membrane adhesively bonded to the membrane, an electrode connected to the first electron transfer protein membrane, an electrode that electrically influences the second electron transfer protein membrane, and an electrode connected to the third electron transfer protein membrane. 1. A transistor element which generates either transistor characteristics or switching characteristics by utilizing the difference in redox potential of each electron transfer protein. (2) The transistor element according to claim 1, wherein the electron transfer protein is selected from non-heme-iron-sulfur protein, cytochrome c protein, cytochrome b protein, flavodoxin, plastocyanin, and thioredoxin. . (3) The transistor element according to claim 1, wherein the electron transport protein film is a monomolecular film. (4) The transistor device according to claim 1, wherein an enzyme is used to supply electrons to the electron transfer protein. (5) The transistor element according to claim 1, wherein the electron transfer protein film is provided with a metal electrode. (6) The transistor element according to claim 5, wherein the electrode provided on the electron transfer protein membrane is a metal electrode, and a chemically modified electrode is used in which the metal electrode is chemically modified with an organic molecule. (7) Utilizing the specificity of the interaction between different types of electron transfer proteins, electrons flow in the direction perpendicular to the cumulative membrane in each electron transfer protein molecule, and between adjacent electron transfer protein molecules in the horizontal direction to the cumulative membrane. Claim 1 is characterized in that the electron transfer protein is oriented in a predetermined molecular arrangement within the homogeneous electron transfer protein membrane and between the different electron transfer protein membranes so that no transfer of electrons occurs. Transistor element described in section. (8) The transistor element according to claim 1, wherein either a lipid or a fatty acid is used as the support for orientation of the electron transfer protein. (9) an electrode connected to the first electron transfer protein membrane;
The transistor element according to claim 1, wherein the electrodes connected to the electron transfer protein membrane are arranged at right angles to each other. (10) The transistor device according to claim 9, wherein the electrodes connected to the first and second electron transport protein membranes are each a group of a plurality of parallel linear electrodes. (11) The transistor element according to claim 1, wherein the electrode connected to the second electron transfer protein membrane and the electrode connected to the third electron transfer protein membrane are arranged at right angles to each other. (12) The transistor device according to claim 11, wherein the electrodes connected to the second and third electron transport protein membranes are each a group of a plurality of parallel linear electrodes.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60003603A JPH0691241B2 (en) | 1985-01-12 | 1985-01-12 | Transistor element |
| US06/815,068 US4613541A (en) | 1985-01-12 | 1985-12-31 | Electronic device using electron transport proteins |
| DE19863600564 DE3600564A1 (en) | 1985-01-12 | 1986-01-10 | ELECTRONIC DEVICE WITH ELECTRONIC TRANSPORTING PROTEINS |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60003603A JPH0691241B2 (en) | 1985-01-12 | 1985-01-12 | Transistor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61163663A true JPS61163663A (en) | 1986-07-24 |
| JPH0691241B2 JPH0691241B2 (en) | 1994-11-14 |
Family
ID=11562062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60003603A Expired - Fee Related JPH0691241B2 (en) | 1985-01-12 | 1985-01-12 | Transistor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0691241B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6310564A (en) * | 1986-07-01 | 1988-01-18 | Mitsubishi Electric Corp | Switching element |
| JPS63237562A (en) * | 1987-03-26 | 1988-10-04 | Mitsubishi Electric Corp | Switching element |
| JP2014053620A (en) * | 2013-09-30 | 2014-03-20 | Sony Corp | Molecular device, single molecule optical switch element, functional element, molecular wire and electronic apparatus |
| US8993513B2 (en) | 2007-07-13 | 2015-03-31 | Sony Corporation | Molecular device, single-molecular optical switching device, functional device, molecular wire, and electronic apparatus using functional device |
-
1985
- 1985-01-12 JP JP60003603A patent/JPH0691241B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6310564A (en) * | 1986-07-01 | 1988-01-18 | Mitsubishi Electric Corp | Switching element |
| JPS63237562A (en) * | 1987-03-26 | 1988-10-04 | Mitsubishi Electric Corp | Switching element |
| US8993513B2 (en) | 2007-07-13 | 2015-03-31 | Sony Corporation | Molecular device, single-molecular optical switching device, functional device, molecular wire, and electronic apparatus using functional device |
| JP2014053620A (en) * | 2013-09-30 | 2014-03-20 | Sony Corp | Molecular device, single molecule optical switch element, functional element, molecular wire and electronic apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0691241B2 (en) | 1994-11-14 |
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