JPS61162289A - Diffusion joining method of titanium and aluminum - Google Patents

Abstract

PURPOSE:To make possible the joining of high melting metallic Ti and low melting metallic Al and to obtain a good joint part at the temp. below the m.p. of Al forming a low melting alloy layer on the joint surface of Ti. CONSTITUTION:The alloy layer 3 which has the m.p. lower than the m.p. of Ti and is suitable for joining at the temp. lower than the m.p. of Al 1 is formed on the joint surface of the Ti 2 which is the high melting metal in joining of the Ti 2 which is the high melting metal and the Al 1 which is the low melting metal. The layer 3 is mated with the joint surface of the Al 1 and both joint surfaces are joined after heating to melt. The alloy contg. several % Cu or Ti in Al-Si is used for the low melting alloy layer to be provided to the joint surface of the high melting metal and the alloy layer is formed in an inert atmosphere by a sputtering vapor deposition method using said alloy as a target.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、異種金属の接合に係シ、チタンとアルミニウ
ムの拡散接合方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to joining dissimilar metals, and relates to a method for diffusion joining titanium and aluminum.

〔発明の背景〕[Background of the invention]

従来、この種の組合せによる接合は金属化合物を形成す
るためアーク溶接の適用が不可能なことから、ろう合法
に頼っている。しかし、ろう材による依存度が大きく、
被接合材と同等の強度を得ることは難かしい。′まだ拡
散接合法による接合も考えられる。この場合、箔や粉末
をインサートして接合を行うが、接合界面には酸素及び
９索等のガスが吸着されていると共に、酸化皮膜が形成
されているためボイドや接合不良等の欠陥が発生しやす
く、高品質の接合部が得られない。特にＡｔ。Conventionally, joining by this type of combination has relied on the brazing method since arc welding cannot be applied due to the formation of a metal compound. However, it is highly dependent on brazing filler metal,
It is difficult to obtain the same strength as the material to be joined. 'It is also possible to join by diffusion bonding method. In this case, bonding is performed by inserting foil or powder, but gases such as oxygen and 9-wires are adsorbed at the bonding interface, and an oxide film is formed, resulting in defects such as voids and poor bonding. It is difficult to obtain high-quality joints. Especially At.

＋Ｐｉは酸累、水素、窒素等のガスに対して活性である
ため上記した欠陥の発生が著しい。Since +Pi is active against gases such as acid accumulation and hydrogen and nitrogen, the above-mentioned defects occur significantly.

そして、尚融点金属のＰｉと低融点全域のＡｔとでは約
１，０００ｔ）’の融点差があるため接合温度に制限が
ある。すなわち、接合温度をＡｔの融点以上には卵熱で
きない、そこでＡ７の融点以下の６００Ｃ前後で接合し
ようとしても厚い酸化皮膜が破れず全く接合出来ない。Furthermore, since there is a difference in melting point of about 1,000 t)' between Pi, which is a metal with a melting point, and At, which is a metal with a low melting point, there is a limit to the bonding temperature. That is, the bonding temperature cannot be heated above the melting point of At, and even if bonding is attempted at around 600C, which is below the melting point of A7, the thick oxide film will not break and bonding will not be possible at all.

また、インサート材として箔及び粉末を被接合材間に挾
んで接合する場合には大きな加圧力を必要とすることか
ら変形が大きくな９、目的とする形状の製品製作が不可
能となる等の問題がある。向、本願に関連するものとし
て特公昭５７−１２６５１が矧られている。In addition, when inserting foil or powder between the materials to be welded, a large pressure is required, resulting in large deformations9, making it impossible to manufacture products with the desired shape, etc. There's a problem. Additionally, Japanese Patent Publication No. 57-12651 is mentioned as being related to the present application.

〔発明の目的〕[Purpose of the invention]

本発明の目的は高融点金属のＴｉと低融点金属であるＡ
７との異種金属の接合全可能にし、かつ低融点金属、す
なわちＡｊの溶融点より低い温度で接合し、高品質の接
合部を得ることのできる異種金属のチタンとアルミニウ
ムの拡散接合法を提供することにおる。The purpose of the present invention is to combine Ti, a high melting point metal, and A, a low melting point metal.
To provide a diffusion bonding method for dissimilar metals, titanium and aluminum, which enables the bonding of dissimilar metals with 7 and which enables bonding at a temperature lower than the melting point of a low melting point metal, that is, Aj, and obtains a high quality bonded part. I am going to do something.

〔発明の概要〕[Summary of the invention]

本発明は高融点金属のＴ１と低融点金属のＡ４の接合に
おいて、高融点金属であるＴｉの接合面に（Ｉ　ｉの融
点より低く、かつ、Ａｔの融点よりも後、接合すること
を特徴とした接合方法である。The present invention is characterized in that in joining T1, which is a high melting point metal, and A4, which is a low melting point metal, the joining is performed on the bonding surface of Ti, which is a high melting point metal (I) at a point lower than the melting point of Ii and after the melting point of At. This is the joining method.

本発明の接合方法において、高融点金属の接合面に設け
る低融点合金層としてはＡｔ−８ｉ系にＣｕ又はＴｉを
数パーセント含有した合金を用い、その付会をターゲッ
トとしてスパッタ蒸着法により不活性雰囲気中で形成す
る。ここで形成した合金層は被接合材より融点が低く、
ぬれ性が良好なため接合性が良い。また、スパッタ蒸着
法によりＴｉの接合面に合金層を形成する方法は箔や粉
末をインサートして接合する方法に比べて、接合界面の
面積が少なくなるばかりか消及び粉末から発生する酸素
、窒素及び水垢ガス等の影響を緩和できるため、及着ガ
スや酸化皮膜が著しく少なくなる。In the bonding method of the present invention, an At-8i alloy containing several percent of Cu or Ti is used as the low melting point alloy layer provided on the bonding surface of the high melting point metal, and an inert layer is formed by sputter deposition using the adhesion as a target. Formed in an atmosphere. The alloy layer formed here has a lower melting point than the materials to be joined,
Good bondability due to good wettability. In addition, the method of forming an alloy layer on the bonding surface of Ti by sputter vapor deposition method not only reduces the area of the bonding interface compared to the method of bonding by inserting foil or powder, but also reduces the amount of oxygen and nitrogen generated from the evaporation and powder. Since the influence of limescale gas, etc. can be alleviated, the amount of adhering gas and oxide film is significantly reduced.

また、接合面を清浄化後金金層を形成したことは合金層
と被層合材との密着性が著しく良好なため、接合時の原
子移動が容易であるため箔及び粉末をインサートした場
合より拡散が速く進行し、の接合のほか、類似の材料を
組合せた場合にも適用可能で材料の特性を損なうことな
く、シかも従来より短時間で接合できる。In addition, forming a gold layer after cleaning the bonding surface has extremely good adhesion between the alloy layer and the composite material to be layered, and atomic movement during bonding is easy, so when inserting foil or powder. Diffusion progresses faster, and it can be applied not only to bonding, but also to combinations of similar materials, and can be bonded in a shorter time than before without impairing the properties of the materials.

接合面に合金層を形成する方法は上記スパッタ蒸着法以
外に電子ビーム照射法、アーク溶接及び溶射法等の適用
が考えられるが、いずれも被接合材を溶融するので、好
適でない。また、箔及び粉末をインサートとして拡散接
合した場曾には接合界面が多くなる。ガス放出が大きい
等の問題があシ、欠陥発生の大きな原因となるが、拳法
のように真空中でスパッタ蒸着し、合金層を形成するこ
とは接合時に被接合材及びインサート材から発生するガ
スの影響を排除でき、良好な接合部が得られる。In addition to the above-mentioned sputter deposition method, electron beam irradiation, arc welding, thermal spraying, and the like can be considered as a method for forming an alloy layer on the joint surface, but these methods melt the materials to be joined, and are therefore not suitable. Furthermore, when diffusion bonding is performed using foil and powder as inserts, there are many bonding interfaces. However, forming an alloy layer by sputter deposition in a vacuum as in Kenpo does not eliminate the gases generated from the materials to be joined and the insert material during joining. The effects of this can be eliminated and a good joint can be obtained.

合金層の合金組成としてはｋｔ−８ｉ系を主成分とし、
これにＣｕ又はＴＩのいずれか１種を０．１〜０．５チ
添加し、被接合材の溶融点の低い側、すなわち、Ａｔ、
ｌニジ約６０〜１００Ｃ低くて溶けるように調整してい
る。そのため、従来法、すなわち、箔及び粉末をインサ
ートした場合に得ることのできなかったような高品質接
合部が得られるようになる。The alloy composition of the alloy layer is mainly composed of kt-8i system,
Add 0.1 to 0.5 of one of Cu or TI to this, and add the lower melting point of the material to be joined, that is, At,
It is adjusted to melt at a low temperature of about 60 to 100C. This makes it possible to obtain high-quality joints that could not be obtained with conventional methods, ie, with foil and powder inserts.

また、Ｍｇを含む合金系の接合ではｔａｇの蒸発が問題
となるが、この場合Ｍｇを含む被接合材の接合面に、Ａ
ｒイオンビームによるエツチング後Ｃｕを２〜３μ厚さ
にスパッタリング蒸着することによって、Ｍｇの蒸発を
防止することが出来る。In addition, tag evaporation is a problem when joining alloys containing Mg, but in this case, A
Evaporation of Mg can be prevented by sputtering depositing Cu to a thickness of 2 to 3 μm after etching with an r-ion beam.

Ｃｕは拡散接合時に速やかにマトリクス内に拡散するた
め、接合性や強度には全く影響を及ぼさない。又Ｃｕけ
Ａｌ接合面の酸化防止にも効果があると同時にＣｕはＡ
ｔ中に固溶できるため、接合性も向上できる効果がある
。Since Cu quickly diffuses into the matrix during diffusion bonding, it does not affect bondability or strength at all. It is also effective in preventing oxidation of the Cu-Al joint surface, and at the same time, Cu
Since it can be solid-dissolved in t, it has the effect of improving bonding properties.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の実施例について説明する。供試材は高融
点金属としてＴｉ合金材（Ｔｉ−６Ａ７−４　Ｖ）を用
い、低融点金属としてＡｔ板（Ａ５０８３Ｐ）を用いた
。合金層の形成はＡ７１０％Ｓｉ合金にＣｕかＴｉの１
種を添加したターゲットによりネ活性雰囲気中で２〜３
μｍｎスパッタ蒸着した。また、スパッタ蒸着で合金層
を形成する前および接合前の接合面は真空中（３×１０
−”Ｔｏｒｒ　）でアルゴンイオンビーム（出カニ６０
０Ｗ、時間：ｊＯ分）によりエツチングし、その後に、
合金層を形成し、更にＣｕを１〜２μスパッタ蒸着し接
合面として接合した。接合は２つの異なった被接合材の
ｒｆ　ｉとＡｔのうち、溶融温度の低い被接合材でらる
Ａｔより約６０Ｃ低い温度、すなわち６００Ｃで３０分
間保持して行なった。Examples of the present invention will be described below. As the test materials, a Ti alloy material (Ti-6A7-4V) was used as a high melting point metal, and an At plate (A5083P) was used as a low melting point metal. The alloy layer is formed by adding Cu or Ti to the A710%Si alloy.
2-3 times in an activated atmosphere by a seeded target
μmn sputter deposition. In addition, before forming the alloy layer by sputter deposition and before bonding, the bonding surface was placed in a vacuum (3 × 10
-"Torr) with an argon ion beam (60
0W, time: jO minutes), and then,
An alloy layer was formed, and Cu was further sputter-deposited to form a bonding surface of 1 to 2 microns. Bonding was carried out by holding the temperature at 600C for 30 minutes, which is about 60C lower than At, which is the material to be joined with a lower melting temperature, among two different materials to be joined, rf i and At.

第１図は接合条件、ｇ２図は接合方法をそれぞれ示した
。接合温度は第１図に示すようにＡｔの融点以Ｆの温度
、すなわち６００　Ｃ，加圧力を３ｇとして行なったが
、変形が全くなく、良好な接合部が得られた。第３図は
接合部の顕微鏡組織を示す。接合部にはボイドや接合不
良等の欠陥発生は認められなかった。Fig. 1 shows the bonding conditions, and Fig. g2 shows the bonding method. As shown in FIG. 1, the bonding temperature was 600 C, ie, 600 C, and the pressure was 3 g, as shown in FIG. 1, and a good bonded portion was obtained with no deformation at all. FIG. 3 shows the microscopic structure of the joint. No defects such as voids or poor bonding were observed in the joint.

〔発明の効果〕〔Effect of the invention〕

属Ａ４との接合を可能にし、接合に悪影響を及ぼす吸着
ガス、酸化物の混入を防止するとともにＡｔの融点以下
の温度で良好な接合部が得られる等品質向上に効果があ
る。この効果をより顕著なものとしたのは合金層を形成
後、接合面となる合金層の表面を高真空中でエツチング
すると同時に接合面の酸化およびＭｇの蒸発防止を図る
ためにＣｕ等を２〜３μｍ程度スパッタリングし、それ
を接合面として、接合したことで接合性が著しく良好と
なったものである。It enables bonding with A4 metal, prevents adsorption gases and oxides from being mixed in that would have a negative effect on bonding, and is effective in improving quality, such as obtaining a good bonded part at a temperature below the melting point of At. What made this effect even more remarkable is that after forming the alloy layer, the surface of the alloy layer that will become the bonding surface is etched in a high vacuum, and at the same time, 2 layers of Cu, etc. are etched in order to prevent oxidation of the bonding surface and evaporation of Mg. By sputtering about ~3 μm and using this as a bonding surface, the bonding properties were significantly improved.

【図面の簡単な説明】[Brief explanation of drawings]

一第１図は本発明のチタンとアルミニウムの拡散接合方
法の実施時の接合条件説明図、第２図は第１図の方法実
施時の接合部の断面構成図、第３図は第２図の接合部断
面の顕微鏡組織写真である。 １・・・ｆｉ、ｔ、２・・・’ｆ’ｉ、３・・・合金層
。 代理人　弁理士　高５橋、明・夫ジ 小川ど−〕フ- Fig. 1 is an explanatory diagram of the bonding conditions when implementing the titanium and aluminum diffusion bonding method of the present invention, Fig. 2 is a cross-sectional configuration diagram of the bonded part when the method of Fig. 1 is carried out, and Fig. 3 is Fig. 2. This is a microscopic microstructure photograph of a cross section of a joint. 1... fi, t, 2...'f'i, 3... Alloy layer. Agent: Patent attorney: Takashi Gakashi, Akira Fuji Ogawa Dofu

Claims (1)

【特許請求の範囲】[Claims] １、高融点金属であるチタン及びチタン合金とアルミニ
ウム及びアルミニウム合金との異種金属の拡散接合方法
において、被接合材であるチタン及びチタン合金、アル
ミニウム及びアルミニウム合金の融点より低い合金層を
接合面に設ける方法で、その方法は接合面を真空中でア
ルゴンイオンビームにより清浄化した後、その清浄面の
保護と接合性を考慮した合金層をスパッタリングし、接
合面として接合することを特徴とするチタンとアルミニ
ウムの拡散接合方法。1. In the diffusion bonding method of dissimilar metals, such as titanium and titanium alloys, which are high melting point metals, and aluminum and aluminum alloys, an alloy layer with a melting point lower than that of titanium, titanium alloys, aluminum, and aluminum alloys, which are the materials to be bonded, is applied to the bonding surface. This method involves cleaning the bonding surface with an argon ion beam in a vacuum, then sputtering an alloy layer that takes into account the protection and bonding properties of the cleaned surface, and bonding it as a bonding surface. and aluminum diffusion bonding method.