JPS6115992A - Gold-tin alloy plating bath and plating method - Google Patents
Gold-tin alloy plating bath and plating methodInfo
- Publication number
- JPS6115992A JPS6115992A JP13417084A JP13417084A JPS6115992A JP S6115992 A JPS6115992 A JP S6115992A JP 13417084 A JP13417084 A JP 13417084A JP 13417084 A JP13417084 A JP 13417084A JP S6115992 A JPS6115992 A JP S6115992A
- Authority
- JP
- Japan
- Prior art keywords
- gold
- plating
- tin
- plating bath
- tin alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は金−吻合金メッキ浴及びこれを用いるメッキ方
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a gold-rostol alloy plating bath and a plating method using the same.
（従来の技術）
一般に、金−錫合金、中でも金８０重ｔ％、錫２ｏｏｍ
ｓの共晶合金は、融点が２８０℃と低いこと、耐食性が
侵れていることから、信頼性な侠する半導体装Ｕの組立
用ろ５材として用いられている。この用途は具体的には
半導体素子の接着とセラミックパッケージにおけるシー
ルカバーの接着である。(Prior art) Generally, gold-tin alloy, especially gold 80wt%, tin 2oom
The eutectic alloy of S has a low melting point of 280° C. and has poor corrosion resistance, so it is used as a filter material for assembling a reliable semiconductor device U. Specifically, this application is for adhesion of semiconductor elements and for adhesion of seal covers in ceramic packages.
従来、上記ろ５１は、合金インゴットを熱間圧延して薄
板状とし、この薄板をスリッティングして所要の幅のテ
ープを得、これを一端から切り取りながら接着に供した
り、打抜き加工して所要の形状に成形した後、接着に供
するなどの方法で使用されてきた。Conventionally, the filter 51 is made by hot rolling an alloy ingot into a thin plate, slitting the thin plate to obtain a tape of the required width, cutting it from one end and using it for gluing, or punching it into the desired width. It has been used by methods such as forming it into a shape and then subjecting it to adhesion.
（発明が解決しようとする問題点）
しかしながら、この組立方法にあっては接着を必要とす
る部品１個に句ぎ、ろう材片を１飼ずつ用いるものであ
るため、組立装置が複雑になると共にろう材片の成形コ
ストも加わり、組立コスト節減のネックになっていた。(Problems to be Solved by the Invention) However, in this assembly method, one piece of brazing material is used for each part that requires gluing, so the assembly equipment becomes complicated. At the same time, the cost of molding the filler metal pieces was added, which became a bottleneck in reducing assembly costs.
この欠点は各部品の裏面に所要の組成の合金をメッキし
ておくことにより解消し得る。例えば半導体ウェハーの
主面に複数の半導体素子を形成し。This drawback can be overcome by plating the back side of each component with an alloy of the desired composition. For example, a plurality of semiconductor elements are formed on the main surface of a semiconductor wafer.
裏面に金−錫合金メッキを施し、然る後このウエバーを
１個ずつ素子に分割して半導体装置の組立に供すれば、
素子の接着はろう材の熔融に要する温度に加熱するだけ
で揖し、大幅に組立コストを節減できる。ところが、こ
のような金−錫合金メッキを施すためのメッキ浴として
ピリジン酸浴。If the back side is plated with gold-tin alloy, and then this webber is divided into elements one by one and used for assembling semiconductor devices,
The elements can be bonded together simply by heating to the temperature required to melt the brazing material, which can significantly reduce assembly costs. However, a pyridic acid bath is used as a plating bath for applying such gold-tin alloy plating.
クエス酸浴等いくつか報告されているが、いずれも浴の
安定性に欠け、実用されるに至っていない。There have been some reports such as quesacic acid baths, but all of them lack stability and have not been put to practical use.
このため安定した金−錫合金メッキ浴の開発が強く要請
されていた。Therefore, there has been a strong demand for the development of a stable gold-tin alloy plating bath.
（問題点な解決するための手段）
本発明者らは上記要請に鑑み、安定な金−錫合金メッキ
浴を得るべく鋭意研究した結果、金イオン及び錫イオン
をクエン酸三アンモニウムで錯化したメッキ浴が安定性
に優れていることを見出して本発明に到達した。即ち本
発明のメッキ浴は金を２〜５０１）／ｌ 、錫を２〜５
０ｇ／ｌ、クエン酸三アンモニウムを５０〜５００１）
／を含有せしめた点に特徴がある。(Means for solving the problem) In view of the above request, the present inventors conducted intensive research to obtain a stable gold-tin alloy plating bath, and as a result, they complexed gold ions and tin ions with triammonium citrate. The present invention was achieved by discovering that the plating bath has excellent stability. That is, the plating bath of the present invention contains 2-501)/l of gold and 2-5/l of tin.
0g/l, triammonium citrate 50-5001)
It is characterized by containing /.
本発明のメッキ浴中の金は、シアン化金、塩化金酸、塩
化金酸カリウム、亜硫酸金ナトリウムとして添加し得る
が、シアン化金カリウムが最も安定な浴となる。また錫
は、錫酸カリウム、錫酸ナトリウムとして添加し得るが
、恒酸第１錫、塩化第１鯛か安定な浴のために好ましい
。次に本発明のメッキ浴を購成するには上記金化合物、
錫化合物をクエン酸三アンモニウム水溶液に溶解すれば
よい。しかし金及び錫の濃度があまり小さいと電着速度
が遅く能率的でない。またメッキ操作にお 、いてメッ
キ液の一部が被メッキ物に付着してメッキ浴から持ち出
されるが、メッキ濃度が高いと、この持出し量も多くな
り、回収コストが増加することになる。このためそれぞ
れ２〜５０１）／ｌの範囲とするのが好ましい。クエン
酸三アンモニウムは金イオン及び錫イオンを錯化し、こ
の錯体な安定に保持するに足る量であればよく、５０〜
５００Ｖｔとするのが好ましい。しかしあまり磯度が高
いとメッキ浴の粘度が増加し、均一なｔ着性が悪くなる
。The gold in the plating bath of the present invention can be added as gold cyanide, chloroauric acid, potassium chloroaurate, or sodium gold sulfite, but potassium gold cyanide provides the most stable bath. Further, tin can be added as potassium stannate or sodium stannate, but stannous monochloride and stannous chloride are preferred for stable baths. Next, to purchase the plating bath of the present invention, the above gold compound,
The tin compound may be dissolved in an aqueous triammonium citrate solution. However, if the concentrations of gold and tin are too low, the electrodeposition rate is slow and inefficient. Further, during plating operations, a portion of the plating solution adheres to the object to be plated and is removed from the plating bath, but if the plating concentration is high, the amount removed will also increase, leading to an increase in recovery costs. For this reason, it is preferable to set it as the range of 2-501)/l, respectively. Triammonium citrate may be used in an amount sufficient to complex gold ions and tin ions and maintain this complex in a stable manner;
It is preferable to set it to 500Vt. However, if the degree of rockiness is too high, the viscosity of the plating bath increases and uniform T adhesion deteriorates.
合金メッキに２いて、−着物の組成はメッキ浴の金跣組
成、ＰＨ１温度及び陰極電流密度に依存することが知ら
れている。本発明のメッキ浴の場合も同様であり、メッ
キ浴中の金及び錫の濃度に応じて電沼物の組成も変化す
る。またＰＨが低くなるにつれて電着物の錫が減少する
。メッキ浴のＰＨが７を越え、又は３未満ではメッキの
外観が悪くなるので、ＰＨ３〜７の範囲でメッキする必
要がある。ＰＨの調整には通常の酸、アルカリを用いる
ことができる。より好ましいＰＨ範囲は３．５〜４，５
である。Regarding alloy plating, it is known that the composition of the kimono depends on the metal composition of the plating bath, the PH1 temperature, and the cathode current density. The same applies to the plating bath of the present invention, and the composition of the electroplating material changes depending on the concentrations of gold and tin in the plating bath. Furthermore, as the pH decreases, the amount of tin in the electrodeposit decreases. If the pH of the plating bath exceeds 7 or is less than 3, the appearance of the plating will deteriorate, so it is necessary to perform plating at a pH in the range of 3 to 7. Ordinary acids and alkalis can be used to adjust the pH. More preferable pH range is 3.5-4.5
It is.
次に、陰極電流密度Ｄｋによっても電着物の組成が変化
し、］）ｋが上昇するに従って錫品位が増し、Ｄｋ ７
！１″−０，８Ａ／ｄｍ”を超えると逆に錫品位が減少
する。従って上記のメッキ浴組成、ＰＨ及びＤｋを選ぶ
ことにより任意の組成の金−錫合金を電液せしめること
ができ、メッキ浴組成が一定であってもＰ １）及びＤ
ｋにより電着物の組成を変えることができる。そこでＤ
ｋはα４〜ｌ Ａ／ｄｍ”とする昼餐があるっなおりｋ
の値が低いと析出速度が遅く、能率的でない。また、高
過ぎるとメッキ外観が不良となる。Next, the composition of the electrodeposit also changes depending on the cathode current density Dk, and as ]) k increases, the tin grade increases, and Dk 7
! On the contrary, if it exceeds 1"-0.8 A/dm", the tin quality decreases. Therefore, by selecting the above plating bath composition, PH and Dk, it is possible to electrolyte a gold-tin alloy of any composition, and even if the plating bath composition is constant, P1) and D
The composition of the electrodeposit can be changed by k. So D
There is a lunch where k is α4~l A/dm.
If the value of is low, the precipitation rate is slow and inefficient. Moreover, if it is too high, the plating appearance will be poor.
メッキの温匿は１５〜２５℃とするのが望ましい。２５
℃を超えると錫の酸化が多くなり、浴の安定性からみて
好ましくなく、また１５℃未満では析出速度が低下し能
率的でないからである。It is desirable that the plating be kept at a temperature of 15 to 25°C. 25
If the temperature exceeds 15°C, the oxidation of tin increases, which is unfavorable from the viewpoint of bath stability. If the temperature exceeds 15°C, the precipitation rate decreases and is not efficient.
なお、本発明のメッキ浴に種々の光沢剤を添加しても差
支えない。例えば塩化コバルト、塩化ニッケル等の無機
質光沢剤、ペプトン、ゼラチン、トルイジン等の有機質
光沢剤が使用できる。また錫の酸化防止剤として、Ｌ−
アスコルビン酸、硫酸ヒドラジン、抱水ヒドラジン等を
添加するとより良好なメッキ皮膜を得ることができる。Note that various brighteners may be added to the plating bath of the present invention. For example, inorganic brighteners such as cobalt chloride and nickel chloride, and organic brighteners such as peptone, gelatin, and toluidine can be used. Also, as a tin antioxidant, L-
A better plating film can be obtained by adding ascorbic acid, hydrazine sulfate, hydrazine hydrate, etc.
（発明の効果）
以上説明したよ５に、本発明のメッキ浴開発により金−
錫合金メッキが実用的になり、部品接着の組立コスト低
減に寄与することが可能になる等の効果がある。(Effects of the Invention) As explained above, the development of the plating bath of the present invention results in
This has the effect of making tin alloy plating more practical and contributing to lower assembly costs for bonding parts.
以下実施例により説明する。This will be explained below using examples.
実施例
クエン酸三アンモニウム２００９μの水溶液にシアン化
金カリウム２０１／ｌ 、塩化第１錫１３ルｔを溶解し
、Ｌ−アスコルビン酸を３０ＩＩ／ｌ、塩化ニッケルを
１ｙ７ｔ、ペプトンを５９／ｌとなるように添加してメ
ッキ浴を得た。このメッキ浴を用い、直（４５０ｉｎの
シリコンウェハーを陰極に、チタン白金電極を陽極とし
、Ｐ Ｈ４，０、温度２０℃、陰極祉流冨度０．６ Ａ
／ｄｍ”で陰極を揺動しながら３０分間メッキを行った
所、シリコンウェハー上に金−錫合金が７μ厚に電着し
た。電着物を螢光Ｘ線分析装置で調べた所、錫品位は２
０重量％であり、バラツキは±２％であった。Example: Dissolve 201/l of potassium gold cyanide and 13t of stannous chloride in an aqueous solution of 2009μ of triammonium citrate, resulting in L-ascorbic acid of 30II/l, nickel chloride of 1y7t, and peptone of 59/l. A plating bath was obtained by adding as follows. Using this plating bath, a 450-inch silicon wafer was used as a cathode, a titanium-platinum electrode was used as an anode, and the pH was 4.0, the temperature was 20°C, and the cathode current density was 0.6 A.
Plating was carried out for 30 minutes while rocking the cathode at a temperature of 100 m/dm, and a gold-tin alloy was electrodeposited on the silicon wafer to a thickness of 7 μm. When the electrodeposited material was examined using a fluorescent X-ray analyzer, the quality of tin was determined. is 2
It was 0% by weight, and the variation was ±2%.
特許出願人 住友金片鉱山株式会社 Ｃ６年）Patent applicant: Sumitomo Gold Piece Mining Co., Ltd. C6 year)
Claims (2)
ン酸三アンモニウムを５０〜５００ｇ／ｌ含有せしめた
ことを特徴とする金−錫合金メッキ浴。(1) A gold-tin alloy plating bath characterized by containing 2 to 50 g/l of gold, 2 to 50 g/l of tin, and 50 to 500 g/l of triammonium citrate.
ン酸三アンモニウムを５０〜５００ｇ／ｌ含有するメッ
キ浴を用い、ＰＨ３〜７、陰極電流密度０．４〜１Ａ／
ｄｍ＾２、温度１５〜２５℃でメッキすることを特徴と
する金−錫合金メッキ方法。(2) Using a plating bath containing 2 to 50 g/l of gold, 2 to 50 g/l of tin, and 50 to 500 g/l of triammonium citrate, the pH is 3 to 7, and the cathode current density is 0.4 to 1 A/l.
DM^2, a gold-tin alloy plating method characterized by plating at a temperature of 15 to 25°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13417084A JPS6115992A (en) | 1984-06-29 | 1984-06-29 | Gold-tin alloy plating bath and plating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13417084A JPS6115992A (en) | 1984-06-29 | 1984-06-29 | Gold-tin alloy plating bath and plating method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6115992A true JPS6115992A (en) | 1986-01-24 |
Family
ID=15122082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13417084A Pending JPS6115992A (en) | 1984-06-29 | 1984-06-29 | Gold-tin alloy plating bath and plating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6115992A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006332415A (en) * | 2005-05-27 | 2006-12-07 | Sharp Corp | Semiconductor device |
| WO2015002691A1 (en) * | 2013-07-05 | 2015-01-08 | The Boeing Company | Methods and apparatuses for mitigating tin whisker growth on tin and tin-plated surfaces by doping tin with gold |
| US9721913B2 (en) * | 2015-04-17 | 2017-08-01 | Chipmos Technologies Inc | Semiconductor package and method of manufacturing thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4965940A (en) * | 1972-10-30 | 1974-06-26 | ||
| JPS5363227A (en) * | 1976-11-17 | 1978-06-06 | Amp Inc | Electroplating method of golddcobalt alloy |
-
1984
- 1984-06-29 JP JP13417084A patent/JPS6115992A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4965940A (en) * | 1972-10-30 | 1974-06-26 | ||
| JPS5363227A (en) * | 1976-11-17 | 1978-06-06 | Amp Inc | Electroplating method of golddcobalt alloy |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006332415A (en) * | 2005-05-27 | 2006-12-07 | Sharp Corp | Semiconductor device |
| WO2015002691A1 (en) * | 2013-07-05 | 2015-01-08 | The Boeing Company | Methods and apparatuses for mitigating tin whisker growth on tin and tin-plated surfaces by doping tin with gold |
| CN105378151A (en) * | 2013-07-05 | 2016-03-02 | 波音公司 | Methods and apparatuses for mitigating tin whisker growth on tin and tin-plated surfaces by doping tin with gold |
| JP2016524048A (en) * | 2013-07-05 | 2016-08-12 | ザ・ボーイング・カンパニーＴｈｅ Ｂｏｅｉｎｇ Ｃｏｍｐａｎｙ | Method and apparatus for reducing tin whisker growth on tin and tin plated surfaces by doping tin with gold |
| US10260159B2 (en) | 2013-07-05 | 2019-04-16 | The Boeing Company | Methods and apparatuses for mitigating tin whisker growth on tin and tin-plated surfaces by doping tin with gold |
| CN105378151B (en) * | 2013-07-05 | 2020-08-28 | 波音公司 | Method and apparatus for mitigating tin whisker growth on tin and tin-plated surfaces by doping tin with gold |
| US9721913B2 (en) * | 2015-04-17 | 2017-08-01 | Chipmos Technologies Inc | Semiconductor package and method of manufacturing thereof |
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