JPS6115758U - solid-state image sensor - Google Patents
solid-state image sensorInfo
- Publication number
- JPS6115758U JPS6115758U JP10121184U JP10121184U JPS6115758U JP S6115758 U JPS6115758 U JP S6115758U JP 10121184 U JP10121184 U JP 10121184U JP 10121184 U JP10121184 U JP 10121184U JP S6115758 U JPS6115758 U JP S6115758U
- Authority
- JP
- Japan
- Prior art keywords
- image sensor
- solid
- state image
- pattern
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図はシリコンｐ−ｎ接合の分光感度を示す図、第２
図はシリコンショットキーバリアの分光感度を示す図、
第３図は従来の固体撮像素子の構成を示す図、第４図は
本考案の実施例を示す図、第、５図はシリコン基板の透
過特性奔示す図、第６図は本考案の一具体例を示す図で
あり、図中、４は入射光、５はシリコン基板、６はシリ
コンショットキーレくリア型赤外イメージセンサパター
ン、７は可射イメージセンサパターンである。
なお、図中、同一あるいは相当部分には同一符号を付し
て示している。Figure 1 shows the spectral sensitivity of silicon p-n junction, Figure 2 shows the spectral sensitivity of silicon p-n junction.
The figure shows the spectral sensitivity of silicon Schottky barrier.
FIG. 3 is a diagram showing the configuration of a conventional solid-state image sensor, FIG. 4 is a diagram showing an embodiment of the present invention, FIGS. 5 and 5 are diagrams showing the transmission characteristics of a silicon substrate, and FIG. This figure shows a specific example. In the figure, 4 is incident light, 5 is a silicon substrate, 6 is a silicon Schottky rear type infrared image sensor pattern, and 7 is a visible image sensor pattern. In the drawings, the same or corresponding parts are indicated by the same reference numerals.
Claims (1)
、また上記基板の他方の面には赤外イメージセンサのパ
タージをそれぞれ設けて構成したことを特徴とする固体
撮像素子。1. A solid-state imaging device characterized in that a pattern of a C↓ visible image sensor is provided on two surfaces of a substrate, and a pattern of an infrared image sensor is provided on the other surface of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10121184U JPS6115758U (en) | 1984-07-04 | 1984-07-04 | solid-state image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10121184U JPS6115758U (en) | 1984-07-04 | 1984-07-04 | solid-state image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6115758U true JPS6115758U (en) | 1986-01-29 |
Family
ID=30660652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10121184U Pending JPS6115758U (en) | 1984-07-04 | 1984-07-04 | solid-state image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6115758U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63151798U (en) * | 1987-03-26 | 1988-10-05 |
-
1984
- 1984-07-04 JP JP10121184U patent/JPS6115758U/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63151798U (en) * | 1987-03-26 | 1988-10-05 |
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