JPS61150678A - Electric signal/mechanical amount converter and method of use thereof - Google Patents
Electric signal/mechanical amount converter and method of use thereofInfo
- Publication number
- JPS61150678A JPS61150678A JP27183184A JP27183184A JPS61150678A JP S61150678 A JPS61150678 A JP S61150678A JP 27183184 A JP27183184 A JP 27183184A JP 27183184 A JP27183184 A JP 27183184A JP S61150678 A JPS61150678 A JP S61150678A
- Authority
- JP
- Japan
- Prior art keywords
- shape memory
- memory alloy
- peltier effect
- transformation temperature
- shape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F03—MACHINES OR ENGINES FOR LIQUIDS; WIND, SPRING, OR WEIGHT MOTORS; PRODUCING MECHANICAL POWER OR A REACTIVE PROPULSIVE THRUST, NOT OTHERWISE PROVIDED FOR
- F03G—SPRING, WEIGHT, INERTIA OR LIKE MOTORS; MECHANICAL-POWER PRODUCING DEVICES OR MECHANISMS, NOT OTHERWISE PROVIDED FOR OR USING ENERGY SOURCES NOT OTHERWISE PROVIDED FOR
- F03G7/00—Mechanical-power-producing mechanisms, not otherwise provided for or using energy sources not otherwise provided for
- F03G7/06—Mechanical-power-producing mechanisms, not otherwise provided for or using energy sources not otherwise provided for using expansion or contraction of bodies due to heating, cooling, moistening, drying or the like
- F03G7/065—Mechanical-power-producing mechanisms, not otherwise provided for or using energy sources not otherwise provided for using expansion or contraction of bodies due to heating, cooling, moistening, drying or the like using a shape memory element
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Temperature-Responsive Valves (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、形状記憶合金を用いた電気信号機械量変換素
子及びその使用方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an electrical signal/mechanical quantity conversion element using a shape memory alloy and a method of using the same.
［従来の技術］
従来、電気信号で制御される機械装置のアクチュエータ
等に、形状記憶合金を利用した電気信号機械屋変換素子
が用いられている。[Prior Art] Conventionally, electric signal converting elements using shape memory alloys have been used in actuators of mechanical devices controlled by electric signals.
この種の電気信号機減量変換素子の構成及び作用を第８
図及び第９図を参照して説明する。図中８０は双方向性
形状記憶合金、８３は保持枠、８４は形状記憶合金８０
を保持枠８３に固定するための継手、８５は形状記憶合
金８０の自由端に回動自在に取付けられた差動桿、８６
は差動桿８５を保持する保持台、８７はリード線、８８
は電源、８９はスイッチを示している。双方向性形状記
憶合金８０は変態温度以下で第８図に示す形状で、変態
温度以上で第９図に示す形状の記憶処理が施されている
ものとする。故に、スイッチ８９が開かれた変態温度以
下の温度では、第８図に示すように形状記憶合金８０は
変形し、差動桿８５は引込んだ状態になる。The structure and operation of this type of electric traffic light weight reduction conversion element are explained in the eighth section.
This will be explained with reference to FIG. 9 and FIG. In the figure, 80 is a bidirectional shape memory alloy, 83 is a holding frame, and 84 is a shape memory alloy 80
85 is a differential rod rotatably attached to the free end of the shape memory alloy 80;
is a holding base that holds the differential rod 85, 87 is a lead wire, 88
indicates a power supply, and 89 indicates a switch. It is assumed that the bidirectional shape memory alloy 80 has been subjected to memory treatment to have a shape shown in FIG. 8 below the transformation temperature and a shape shown in FIG. 9 above the transformation temperature. Therefore, at a temperature below the transformation temperature at which the switch 89 is opened, the shape memory alloy 80 deforms as shown in FIG. 8, and the differential rod 85 becomes retracted.
一方、スイッチ８９を閉じると、電ｖＡ８８からリード
線８７．スイッチ８９及び電源８８の回路が形成され、
形状記憶合金８０に電流が流れ同合金８０は抵抗発熱で
加熱される。そして、形状記憶合金８０の温度が変態点
を越えると、形状記憶合金８０は変態温度以上の形状に
なるため、第９図に示す如く差動桿８５を押出す。また
、再びスイッチ８９を開くと、電流が遮断され形状記憶
合金８０は放冷により温度が下がり、変態点以下になる
と第８図に示す状態に戻る。On the other hand, when the switch 89 is closed, the lead wire 87. A circuit of switch 89 and power supply 88 is formed,
A current flows through the shape memory alloy 80, and the alloy 80 is heated by resistance heat generation. Then, when the temperature of the shape memory alloy 80 exceeds the transformation point, the shape memory alloy 80 assumes a shape higher than the transformation temperature, so the differential rod 85 is pushed out as shown in FIG. When the switch 89 is opened again, the current is cut off and the temperature of the shape memory alloy 80 decreases by cooling, and when the temperature falls below the transformation point, it returns to the state shown in FIG.
このように、スイッチ８９の開閉に応じて差動桿８５が
差動するので、電気信号機減量変換素子の働きをするこ
とになる。In this manner, the differential rod 85 operates differentially in accordance with the opening and closing of the switch 89, so that it functions as an electric signal reduction conversion element.
［発明が解決しようとする問題点］
′ しかしながら、この種の電気信号機減量変換素子に
あっては次のような問題があった。即ち、従来の形状記
憶合金を利用した電気信号機減量変換素子は抵抗発熱を
利用して第８図から第９図への差動を行わせているので
、電流量を増すことにより応答速度を速くすることはで
きるが、第９図から第８図への差動は自然放冷に頼らざ
るを得ないため、応答速度が極めて遅くタイミングのコ
ントａ−ルも困難であった。また、双方向性形状記憶合
金の特性として、マルテンサイト変態時の力は逆変態に
より母相に戻るときの力に比べて著しく低り、゛荷重の
程度によっては゛、第８図から第９図の過程はスムーズ
でも、第９図から第８図の過程は不安定になる等、アク
チュ゛エータとして非常に不便で適′用範囲が制限され
て・いた。[Problems to be Solved by the Invention] 'However, this type of electric signal reduction conversion element has the following problems. In other words, the conventional electric signal weight reduction conversion element using a shape memory alloy uses resistance heat generation to perform the differential from Fig. 8 to Fig. 9, so the response speed can be increased by increasing the amount of current. However, since the differential from FIG. 9 to FIG. 8 must rely on natural cooling, the response speed is extremely slow and timing control is difficult. In addition, as a characteristic of bidirectional shape memory alloys, the force during martensitic transformation is significantly lower than the force when returning to the parent phase through reverse transformation; Although the process shown in FIG. 9 is smooth, the process shown in FIGS. 9 to 8 becomes unstable, which is very inconvenient for actuators and limits their range of application.
本発明は上記の事情を考慮してな′されたもので、その
目的とするところは、双方向性形状記憶合金を用いた電
気信号機減量変換素子の応答特性の改善と、往時・［時
の力の均等イビをはかり得る電気信号機減量変換素子を
提供゛するごとにある。The present invention has been made in consideration of the above-mentioned circumstances, and its objectives are to improve the response characteristics of an electrical signal weight reduction conversion element using a bidirectional shape memory alloy, and to An object of the present invention is to provide an electric signal weight reduction conversion element capable of measuring force uniformity.
また本発明の他の目的は、上記電気機械量変換素子を駆
動制御するための電気・信号機減量変換素子の使用方法
を提供することにある。 ゛［問題点を解決する
ための手段］
本発明の骨子は、ペルチェ効果素、子を用いて形状記憶
合金の加熱・冷却を行うことにある。Another object of the present invention is to provide a method of using an electrical/traffic light reduction conversion element for driving and controlling the electromechanical quantity conversion element. [Means for Solving the Problems] The gist of the present invention is to heat and cool a shape memory alloy using a Peltier effect element.
ＬＬで、ペルチェ効果素子について説明する。In LL, the Peltier effect element will be explained.
文献（金属便覧、改訂４版、丸善出版、 Ｐ４Ｏ１０）
にあるように、自由電子の濃度や平均エネルギーが異な
る２種の金属を接触させると電子の移動が起こり、接触
部に電位差が生じる。この電位差に逆らって電流を流す
と、電子は低電位から高電位に移るため、不足のエネル
ギーを熱の形で周囲から奪い接触部の潟・度・が下がる
。この効果を利用したものがペルチェ効果素子である。Literature (Metal Handbook, revised 4th edition, Maruzen Publishing, P4O10)
As shown in , when two metals with different free electron concentrations and average energies are brought into contact, electron movement occurs and a potential difference is created at the contact area. When a current flows against this potential difference, electrons move from a low potential to a high potential, which takes away the missing energy from the surroundings in the form of heat and lowers the temperature of the contact area. A Peltier effect element utilizes this effect.
さて、実際のペルチェ効果素子について、第４図及び第
５図を参照してさらに詳しく説明する。Now, the actual Peltier effect element will be explained in more detail with reference to FIGS. 4 and 5.
第４図及び第５図は電流の流れが逆、な場合を示したも
ので、同一のものである。図中４１（４１１゜４１２）
は電気絶縁体、４２ （４２），４２２。Figures 4 and 5 show the case where the current flow is reversed, and are the same. 41 (411°412) in the diagram
is an electrical insulator, 42 (42), 422.
４２３．４４４ 、・４４５）は電気伝導体電極、４３
（４３１，４３２）、４４ （４４ｔ 、４４２ ）
はいずれもビスマステルル化合物等を主成分とする半導
体であり、４３はＮ型半導体、４４はＰ型半導体である
。また、４５ （４５１，４５２）はリード線、４６は
直流電源、４７は熱の流れを示す矢印である。423.444,・445) is an electric conductor electrode, 43
(431,432), 44 (44t, 442)
All of them are semiconductors whose main component is a bismuth tellurium compound or the like, 43 is an N-type semiconductor, and 44 is a P-type semiconductor. Further, 45 (451, 452) is a lead wire, 46 is a DC power supply, and 47 is an arrow indicating the flow of heat.
第４図について、ペルチェ効果素子の作用を説明すると
、直流電源４６からの電流は１）ード線４５１、電気伝
導体電極４２）．Ｎ型半導体４３１、電気伝導体電極４
２２．Ｐ型半導体４４１、電気伝導体電極４２３．Ｎ型
半導体４３２．電気伝導体電極４２４．Ｐ型半導体４４
２、電気伝導体４２５．リード線４５２の順に流れる。Referring to FIG. 4, to explain the operation of the Peltier effect element, the current from the DC power source 46 is 1) the lead wire 451, the electric conductor electrode 42). N-type semiconductor 431, electrical conductor electrode 4
22. P-type semiconductor 441, electric conductor electrode 423. N-type semiconductor 432. Electrical conductor electrode 424. P-type semiconductor 44
2. Electric conductor 425. The lead wires 452 flow in this order.
このため、電流がＮ型半導体４３からＰ型半導体４４に
流れる電極、つまり第４図の上面側の電極４２２．４２
４では吸熱が起こり、Ｐ型半導体４４からＮ型半導体４
３に流れる下面側の電極４２ｓ 、４２３．４２ｓでは
発熱が起こる。Therefore, the electrode where the current flows from the N-type semiconductor 43 to the P-type semiconductor 44, that is, the electrode 422.42 on the upper surface side in FIG.
4, heat absorption occurs, and the P-type semiconductor 44 changes to the N-type semiconductor 4.
Heat generation occurs in the electrodes 42s and 423.42s on the lower surface side where the current flows through the current.
ところが、同じペルチェ効果素子に対し、直流？！源４
６の極性を変えると、第５図に示すように、Ｐ型半導体
４４からＮ型半導体４３に電流が流れる上面側の電極４
２２，４２４で発熱し、下面側の電極４２），４２３．
４２ｓで吸熱が起こる。However, for the same Peltier effect element, direct current? ! source 4
When the polarity of the electrode 6 is changed, as shown in FIG. 5, the current flows from the P type semiconductor 44 to the N type semiconductor 43.
22, 424 generate heat, and the lower electrodes 42), 423.
Endotherm occurs at 42s.
以上のように、ペルチェ効果素子は直流電流を流すこと
により吸熱・発熱するが、電流の流れを逆・転させると
、吸熱面・発熱面も逆転する特性を持っている。As described above, the Peltier effect element absorbs heat and generates heat when a direct current is passed through it, but when the current flow is reversed or reversed, the heat absorption and heat generation sides also reverse.
また、本発明のもう一つの要素である双方向性形状記憶
合金について説明すると、本合金は可逆形状記憶効果に
よるもので二方向性形状記憶素子、全方位形状記憶合金
とも呼ばれ、通常の形状記憶合金が一方向性、つまり一
定の形状を記憶させた合金を低温で変形させた後加熱す
ると元の形状に戻るが、これを再び低温にしても加熱前
に低温で変形した時の形にはならないのに対し、双方向
性形状記憶合金は合金が高温側と低温側との形状をそれ
ぞれ記憶していて変態温度以上の温度では高温側の形状
、以下では低温側の形状を示す。なお、これらのことは
下記の文献■〜■にも記載されている。Also, to explain the bidirectional shape memory alloy, which is another element of the present invention, this alloy has a reversible shape memory effect and is also called a bidirectional shape memory element or an omnidirectional shape memory alloy. Memory alloys are unidirectional; in other words, when an alloy that memorizes a certain shape is deformed at a low temperature and then heated, it returns to its original shape, but even if it is brought to a low temperature again, it retains the shape it had when it was deformed at a low temperature before heating. In contrast, in bidirectional shape memory alloys, the alloy memorizes the shape of the high temperature side and the low temperature side, and exhibits the shape of the high temperature side at temperatures above the transformation temperature, and the shape of the low temperature side at temperatures below the transformation temperature. Incidentally, these matters are also described in the following documents ① to ②.
■ 清水謙−１坂本英和、“形状記憶合金とその応用（
Ｉ）”、化学と工業、 ＶＯ１５５，Ｎｏ、１０． Ｐ
２Ｓ５（１，９８１）
■ 山内溝、“形状記憶合金の応用と機能性について”
、 Ｕ Ｄ Ｃ、ｖｏ１６６、 Ｈａ、９． Ｐ ９３
３■ 鈴木雄−１“ＮｉＴｉ系形状記憶合金の用途開発
の現状”１日本金属学会会報、第２２巻第８号 ７３０
頁（１９８３）
このような形状記憶合金に形状を記憶させる手段として
は、例えば文献（船久保照康、゛形状記憶合金”、 Ｐ
８３．産業図書出版）にあるように、（１） マルテ
ンサイト相に限界以上の変形を与える。■ Ken Shimizu-1 Hidekazu Sakamoto, “Shape memory alloys and their applications”
I)”, Chemistry and Industry, VO155, No. 10. P
2S5 (1,981) ■ Mizo Yamauchi, “On the application and functionality of shape memory alloys”
, UDC, vol 166, Ha, 9. P93
3. Yu Suzuki-1 “Current status of application development of NiTi-based shape memory alloys” 1 Bulletin of the Japan Institute of Metals, Vol. 22, No. 8, 730
Page (1983) As a means to memorize shape in such a shape memory alloy, for example, the literature (Teruyasu Funakubo, "Shape Memory Alloy", P.
83. As stated in Sangyo Tosho Publishing), (1) Deformation beyond the limit is given to the martensitic phase.
（２応力誘起マルテンサイト変態で変形し得る以上の変
形を母相に与え、
（３） 母相で変形して、これを拘束下でＭｆａｉ度
以下に冷却し、応力下で長時間保持する。(2) Give the matrix a deformation greater than that which can be deformed by stress-induced martensitic transformation, (3) Deform in the matrix, cool it to below Mfai degrees under restraint, and hold it under stress for a long time.
（勾 マルテンサイト相で変形し、これを拘束下で加熱
し逆変態させる。(Gradient deforms in the martensitic phase, which is heated under restraint and undergoes reverse transformation.
（５母相に微細な析出物を生じさせたのち変形する。(5 Deforms after forming fine precipitates in the matrix.
故に、本発明の要素である相方向性形状記憶合金Ａ、Ｂ
に互いに異なる二種類の形状の一つを形状記憶合金Ａに
は変態温度以下で、形状記憶合金Ｂには変態温度以下で
与え、ざらにもう一つの形状を形状記憶合金Ａには変態
温度以下で、形状記憶合金Ｂには変態温度以上で与える
ことは可能である。Therefore, the phase-oriented shape memory alloys A and B, which are elements of the present invention,
One of two different shapes is given to shape memory alloy A at a temperature below the transformation temperature, shape memory alloy B is given a temperature below the transformation temperature, and another shape is given to shape memory alloy A at a temperature below the transformation temperature. Therefore, it is possible to provide shape memory alloy B with a temperature higher than the transformation temperature.
また、本発明番才異なった二種類の形状を記憶した複数
枚の形状記憶合金Ａ、Ｂとペルチェ効果素子Ｐとを、
・・・、Ｐ、Ａ、Ｐ、Ｂ、Ｐ、Ａｊ Ｐ、Ｂ、 ・
・・の順に積層し、カシメ、ボルト締め、溶接、−接着
。In addition, according to the present invention, a plurality of shape memory alloys A and B that memorize two different shapes and a Peltier effect element P are..., P, A, P, B, P, Aj P, B , ・
Laminate in this order, caulk, bolt, weld, and -glue.
蒸着等の手段で接合した複合素子に対し、電流の極性に
より、第６図或いは第７図に示す構造にすることが可能
である。従って、例えば形状記憶合金Ａは全て加熱、形
状記憶合金Ｂは全て冷却の状態、或いは逆の状態にする
ことが可能である。A composite element bonded by means such as vapor deposition can have the structure shown in FIG. 6 or 7 depending on the polarity of the current. Therefore, for example, all shape memory alloys A can be heated and all shape memory alloys B can be cooled, or vice versa.
本発明はこのような点に着目してなされたもので、形状
記憶合金からなる電気信号機減量変換素子において、複
数枚の双方向性形状記憶合金Ａと、変態温度以上で上記
形状記憶合金Ａの変態温度以下の形状で且つ変態温度以
下で上記形状記憶合金Ａの変態温度以上の形状に略等し
い形状の記憶処理を施した複数枚の双方向性形状記憶合
金Ｂと、複数枚のペルチェ効果素子Ｐとを用い、上記形
状記憶合金Ａ、Ｂを交互に積層し、且つ各形状記憶合金
Ａ、Ｂ間に上記ペルチェ効果素子を介在させると共に、
上記形状記憶合金Ａ又はＢを介して相対するペルチェ効
果素子の接合面が共に発熱若しくは吸熱を行うように該
ペルチェ効果素子を配列するようにしたものである。The present invention has been made with attention to these points, and includes a plurality of bidirectional shape memory alloys A, and a shape memory alloy A having a shape memory alloy A at a temperature higher than the transformation temperature. A plurality of bidirectional shape memory alloys B that have been subjected to a memory treatment to have a shape that is below the transformation temperature and approximately equal to the shape that is above the transformation temperature of the shape memory alloy A above the transformation temperature, and a plurality of Peltier effect elements. P, the shape memory alloys A and B are alternately stacked, and the Peltier effect element is interposed between each shape memory alloy A and B, and
The Peltier effect elements are arranged so that the joint surfaces of the Peltier effect elements facing each other via the shape memory alloy A or B both generate heat or absorb heat.
また本発明は、上記構成の電気信号機減量変換素子を使
用するに際し、前記ペルチェ効果素子に流す電流の極性
を反転させることにより、発熱面及び吸熱面を反転させ
るようにした方法である。Further, the present invention is a method in which, when using the electrical signal weight reduction conversion element having the above configuration, the polarity of the current flowing through the Peltier effect element is reversed, thereby reversing the heat-generating surface and the heat-absorbing surface.
［作用］
上記の構成であれば゛、ペルチェ効果素子に電流を流す
ことにより、一方の形状記憶合金Ａを加熱、他方の形状
記憶合金Ｂを冷却することが可能となり、またペルチェ
効果素子に流す電流を逆にすることにより、上記加熱・
冷却の関係を逆にすることが可能である。これにより、
形状記憶合金Ａ。[Function] With the above configuration, it becomes possible to heat one shape memory alloy A and cool the other shape memory alloy B by flowing current through the Peltier effect element, and also to flow current through the Peltier effect element. By reversing the current, the above heating and
It is possible to reverse the cooling relationship. This results in
Shape memory alloy A.
Ｂ及びペルチェ効果素子からなる電気信号機減量変換素
子を電気的に駆動することが可能となる。It becomes possible to electrically drive the electric signal reduction conversion element consisting of B and the Peltier effect element.
［発明の効果］
本発明によれば、形状記憶合金は両面から加熱又は冷却
されるので、電気信号機減量変換素子の応答速度を飛躍
的に向上させることができる。また、形状記憶合金Ａが
加熱、形状記憶合金Ｂが冷却される過程では、形状記憶
合金Ａの逆変態、形状記憶合金８のマルテンサイト変態
に伴う力の合計が出力される。そして、形状記憶合金Ａ
が冷却、形状記憶合金Ｂが加熱される過程では、形状記
憶合金Ａのマルテンサイト変態、形状記憶合金Ｂの逆変
態に伴う力の合計が出力される。このため、アクチュエ
ータとしての往時・復時の力を略等しくすることが可能
となる。[Effects of the Invention] According to the present invention, since the shape memory alloy is heated or cooled from both sides, the response speed of the electric signal weight reduction conversion element can be dramatically improved. In addition, in the process of heating the shape memory alloy A and cooling the shape memory alloy B, the sum of the forces accompanying the reverse transformation of the shape memory alloy A and the martensitic transformation of the shape memory alloy 8 is output. And shape memory alloy A
In the process in which the shape memory alloy B is cooled and the shape memory alloy B is heated, the sum of the forces accompanying the martensitic transformation of the shape memory alloy A and the reverse transformation of the shape memory alloy B is output. Therefore, it is possible to make the forward and backward forces of the actuator substantially equal.
［実施例］ 以下、本発明の詳細を図示の実施例によって説明する。[Example] Hereinafter, details of the present invention will be explained with reference to illustrated embodiments.
第１図及び第２図は本発明の一実施例に係わる電気信号
機減量変換素子を用いたアクチュエータの概略構成を示
す斜視図である。図中１０は、後述する如く２種類の異
なった形状を記憶した複数枚の双方向性形状記憶合金と
複数枚のペルチェ効果素子とを、層状に接合してなる複
合素子（電気信号機減量変換素子）である。また、１３
は基板、１４は複合素子１０を基板１３に固定するため
の固定金具、１５は複合素子１０の自由端に回動自在に
取付けられた差動桿、１６は差動桿１５を保持するため
の保持台、１７は複合素子１０のペルチェ効果素子に電
流を供給するためのリード線、１８は直流電源、１９は
切換えスイッチである。FIGS. 1 and 2 are perspective views showing a schematic configuration of an actuator using an electric traffic light reduction conversion element according to an embodiment of the present invention. In the figure, reference numeral 10 denotes a composite element (electrical traffic light weight reduction conversion element) formed by bonding in layers a plurality of bidirectional shape memory alloys that memorize two different shapes and a plurality of Peltier effect elements, as described later. ). Also, 13
is a substrate, 14 is a fixture for fixing the composite element 10 to the substrate 13, 15 is a differential rod rotatably attached to the free end of the composite element 10, and 16 is a bracket for holding the differential rod 15. A holding stand, 17 a lead wire for supplying current to the Peltier effect element of the composite element 10, 18 a DC power supply, and 19 a changeover switch.
第３図は複合素子１０の詳細を示したもので、１１ａは
変態温度以上で第１図に示す複合素子１０の形状を、ま
た変態温度以下で第２図に示す複合素子１０の形状を記
憶した双方向性記憶合金（形状記憶合金Ａ）である。１
１ｂは変態温度以下で第２図に示す複合素子１０の形状
を、また変態温度以下で第１図に示す複合素子１０の形
状を記憶した双方向性形状記憶合金（形状記憶合金８）
である。また、１２ａ、１２ｂはペルチェ効果素子で、
第１図に示す結線状態で形状記憶合金１１８との接合面
で発熱、形状記憶合金１１ｂとの接合面で吸熱が起こる
ように配列されている。FIG. 3 shows details of the composite element 10, and 11a stores the shape of the composite element 10 shown in FIG. 1 above the transformation temperature, and the shape of the composite element 10 shown in FIG. 2 below the transformation temperature. This is a bidirectional memory alloy (shape memory alloy A). 1
1b is a bidirectional shape memory alloy (shape memory alloy 8) that memorizes the shape of the composite element 10 shown in FIG. 2 below the transformation temperature and the shape of the composite element 10 shown in FIG. 1 below the transformation temperature.
It is. Further, 12a and 12b are Peltier effect elements,
In the wire connection state shown in FIG. 1, they are arranged so that heat is generated at the joint surface with the shape memory alloy 118 and heat is absorbed at the joint surface with the shape memory alloy 11b.
このような構成において、前記第１図の状態では、ペル
チェ効果素子１２ａ、１２ｂにより形状記憶合金１１８
が加熱され、形状記憶合金１１ｂが冷却されるため、形
状記憶合金１１８を変態点以上に、形状記憶合金１１ｂ
を変態点以下にすることが可能である。このため、形状
記憶合金１１ａ、１１ｂが記憶している第１図の形状が
現われ、差動桿１５は引込まれることになる。In such a configuration, in the state shown in FIG. 1, the shape memory alloy 118 is
is heated and the shape memory alloy 11b is cooled, so that the shape memory alloy 118 is heated to a temperature higher than the transformation point
It is possible to reduce the temperature below the transformation point. Therefore, the shape shown in FIG. 1 memorized by the shape memory alloys 11a and 11b appears, and the differential rod 15 is retracted.
次に、第２図に示すように切換えスイッチ１９を切換え
ると、ペルチェ効果素子１２ａ、１２ｂを流れる電流の
極性が変わるため、発熱面と吸熱面とが逆転する。つま
り、形状記憶合金１１ａとの接合面で吸熱が起こり、形
状記憶合金１１ｂとの接合面で発熱が起こる。このため
、形状記憶合金１１ａが変態点以下になり、形状記憶合
金１１ｂが変態点以上になる。このため、形状記憶合金
１１ａ、１１ｂが記憶している第２図の形状が現われ、
差動桿１５を押出すことになる。Next, as shown in FIG. 2, when the changeover switch 19 is switched, the polarity of the current flowing through the Peltier effect elements 12a and 12b changes, so that the heat-generating surface and the heat-absorbing surface are reversed. That is, heat absorption occurs at the joint surface with the shape memory alloy 11a, and heat generation occurs at the joint surface with the shape memory alloy 11b. Therefore, the shape memory alloy 11a becomes below the transformation point, and the shape memory alloy 11b becomes above the transformation point. Therefore, the shape shown in FIG. 2 memorized by the shape memory alloys 11a and 11b appears,
The differential rod 15 will be pushed out.
以上のように、切換えスイッチ１９を操作することによ
り、差動桿１５を引込み・押出しすることができる。そ
してこの場合、複合素子１０を形成する形状記憶合金１
１８．１１ｂは、加熱・吸熱共ペルチェ効果素子により
その両面から行われるため、ペルチェ効果素子１２に流
す電流を制御することにより、応答速度を広範囲に選択
することができる。As described above, by operating the changeover switch 19, the differential rod 15 can be pulled in or pushed out. In this case, the shape memory alloy 1 forming the composite element 10
18.11b is performed from both sides by the Peltier effect element, so by controlling the current flowing through the Peltier effect element 12, the response speed can be selected over a wide range.
また、本実施例に用いた電気信号機減量変換素子は、い
ずれの方向に変形する場合も力は逆変態とマルテンサイ
ト変態との合計となるため、いずれの方向も略同等の力
にすることができる。従って、アクチュエータとしての
往時・復時の力を略等しくすることができ、極めて有効
である。In addition, in the electric traffic light reduction conversion element used in this example, when deforming in any direction, the force is the sum of the reverse transformation and martensitic transformation, so it is possible to make the force approximately equal in either direction. can. Therefore, the forward and backward forces of the actuator can be made substantially equal, which is extremely effective.
なお、本発明は上述した実施例に限定されるものではな
い。前記実施例では曲り変形を利用した場合を示したが
、同様にねじり変形、伸び変形及びこれらの組合わせ変
形を利用した電気信号機減量変換素子も可能である。ま
た、相方向性形状記憶合金Ａ、Ｂとペルチェ効果素子と
の積層数は、必要な力及び応答速度等の条件に応じて定
めればよい。さらに、形状記憶合金の材料、形状等も、
仕様に応じて適宜窓めればよい。また、本発明の電気信
号機減量変換素子を用いた装置は前記第１図及び第２図
に何等限定されるものではなく、仕様に応じて適宜変更
可能である。その他、本発明の要旨を逸脱しない範囲で
、種々変形して実施することができる。Note that the present invention is not limited to the embodiments described above. Although the above-mentioned embodiment shows a case where bending deformation is used, it is also possible to create an electric signal weight reduction conversion element using torsional deformation, elongation deformation, or a combination of these deformations. Further, the number of laminated layers of the phase-oriented shape memory alloys A and B and the Peltier effect element may be determined depending on conditions such as required force and response speed. Furthermore, the material, shape, etc. of shape memory alloys are
You can change the window as appropriate depending on the specifications. Further, the device using the electric signal weight reduction conversion element of the present invention is not limited to the above-mentioned FIGS. 1 and 2, and can be modified as appropriate according to the specifications. In addition, various modifications can be made without departing from the gist of the present invention.
第１図及び第２図はそれぞれ本発明の一実施例に係わる
電気信号機減量変換素子を用いたアクチュエータの概略
構成を示す斜視図、第３図は上記素子の具体的構造を示
す断面図、第４図乃至第７図はそれぞれ本発明の詳細な
説明するためのもので第４図及び第５図はペルチェ効果
素子の作用を説明するための模式図、第６図及び第７図
は双方向性形状記憶合金とペルチェ効果素子との配列例
を示す模式図、第８図及び第９図はそれぞれ従来装置の
概略構成を示す斜視図である。
１０・・・複合素子（電気信号機減量変換素子）、１１
ａ、１１ｂ・・・双方向性形状記憶合金、１２ａ。
１２ｂ・・・ペルチェ効果素子、１３・・・基板、１４
・・・固定金具、１５・・・差動桿、１６・・・保持台
、１７・・・リード線、１８・・・直流電源、１９・・
・切換えスイッチ、４１・・・電気絶縁体、４２・・・
電気伝導体電極、４３・・・Ｎ型半導体、４４・−Ｐ型
半導体、４５・・・リード線、４６・・・直流電源、４
７−・・熱の流れ方向。
第３図
第４図
第５図
第６図
第７図
第８図
第９図1 and 2 are respectively perspective views showing the schematic structure of an actuator using an electric signal reduction conversion element according to an embodiment of the present invention, and FIG. 3 is a cross-sectional view showing the specific structure of the above element. Figures 4 to 7 are for explaining the present invention in detail, respectively. Figures 4 and 5 are schematic diagrams for explaining the action of the Peltier effect element, and Figures 6 and 7 are bidirectional diagrams. FIGS. 8 and 9 are perspective views showing a schematic structure of a conventional device, respectively. FIGS. 10... Composite element (electrical traffic light reduction conversion element), 11
a, 11b... Bidirectional shape memory alloy, 12a. 12b... Peltier effect element, 13... Substrate, 14
...Fixing bracket, 15...Differential rod, 16...Holding stand, 17...Lead wire, 18...DC power supply, 19...
・Selector switch, 41... Electrical insulator, 42...
Electric conductor electrode, 43... N type semiconductor, 44... P type semiconductor, 45... Lead wire, 46... DC power supply, 4
7- Direction of heat flow. Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9
Claims (2)
上で上記形状記憶合金Ａの変態温度以下の形状で且つ上
記変態温度以下で上記形状記憶合金Ａの変態温度以上の
形状に略等しい形状の記憶処理を施した複数枚の双方向
性形状記憶合金Ｂと、複数枚のペルチェ効果素子とを用
い、上記形状記憶合金Ａ、Ｂを交互に積層し、且つ各形
状記憶合金Ａ、Ｂ間に上記ペルチェ効果素子を介在させ
ると共に、上記形状記憶合金Ａ又はＢを介して相対する
ペルチェ効果素子の接合面が共に発熱若しくは吸熱を行
うように該ペルチェ効果素子を配列してなることを特徴
とする電気信号機械量変換素子。(1) A plurality of bidirectional shape memory alloys A, and a shape approximately equal to or higher than the transformation temperature and equal to or lower than the transformation temperature of the shape memory alloy A, and approximately equal to or higher than the transformation temperature of the shape memory alloy A at or below the transformation temperature. Using a plurality of bidirectional shape memory alloys B subjected to the same shape memory treatment and a plurality of Peltier effect elements, the shape memory alloys A and B are alternately stacked, and each shape memory alloy A, The Peltier effect elements are interposed between B and the Peltier effect elements are arranged so that the joint surfaces of the Peltier effect elements facing each other through the shape memory alloy A or B both generate heat or absorb heat. Characteristic electrical signal/mechanical quantity conversion element.
上で上記形状記憶合金Ａの変態温度以下の形状で且つ上
記変態温度以下で上記形状記憶合金Ａの変態温度以上の
形状に略等しい形状の記憶処理を施した複数枚の双方向
性形状記憶合金Ｂと、複数枚のペルチェ効果素子とを用
い、上記形状記憶合金Ａ、Ｂを交互に積層し、且つ各形
状記憶合金Ａ、Ｂ間に上記ペルチェ効果素子を介在させ
ると共に、上記形状記憶合金Ａ又はＢを介して相対する
ペルチェ効果素子の接合面が共に発熱若しくは吸熱を行
うように該ペルチェ効果素子を配列してなる電気信号機
械量変換素子を使用するに際し、前記ペルチェ効果素子
に流す電流の極性を反転させることにより、該ペルチェ
効果素子の発熱面及び吸熱面を反転させることを特徴と
する電子信号機械量変換素子の使用方法。(2) A plurality of bidirectional shape memory alloys A, and a shape approximately equal to or higher than the transformation temperature and equal to or lower than the transformation temperature of the shape memory alloy A, and approximately equal to or higher than the transformation temperature of the shape memory alloy A at the transformation temperature or lower. Using a plurality of bidirectional shape memory alloys B subjected to the same shape memory treatment and a plurality of Peltier effect elements, the shape memory alloys A and B are alternately stacked, and each shape memory alloy A, An electrical signal obtained by interposing the Peltier effect element between B and arranging the Peltier effect elements such that the joint surfaces of the Peltier effect elements facing each other through the shape memory alloy A or B both generate heat or absorb heat. Use of an electronic signal mechanical quantity converting element characterized in that when using the mechanical quantity converting element, the polarity of the current flowing through the Peltier effect element is reversed, thereby reversing the heat generating surface and the heat absorbing surface of the Peltier effect element. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27183184A JPS61150678A (en) | 1984-12-25 | 1984-12-25 | Electric signal/mechanical amount converter and method of use thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27183184A JPS61150678A (en) | 1984-12-25 | 1984-12-25 | Electric signal/mechanical amount converter and method of use thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61150678A true JPS61150678A (en) | 1986-07-09 |
Family
ID=17505466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27183184A Pending JPS61150678A (en) | 1984-12-25 | 1984-12-25 | Electric signal/mechanical amount converter and method of use thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61150678A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61122381U (en) * | 1985-01-18 | 1986-08-01 | ||
| JPH02118171U (en) * | 1989-03-08 | 1990-09-21 | ||
| JP2007151221A (en) * | 2005-11-24 | 2007-06-14 | Sony Corp | Actuator system and position adjusting unit of optical lens |
| DE102016108241A1 (en) * | 2016-05-03 | 2017-11-09 | Volkswagen Aktiengesellschaft | Adjusting means with an actuating element of a shape memory alloy and a dedicated working method |
-
1984
- 1984-12-25 JP JP27183184A patent/JPS61150678A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61122381U (en) * | 1985-01-18 | 1986-08-01 | ||
| JPH0332786Y2 (en) * | 1985-01-18 | 1991-07-11 | ||
| JPH02118171U (en) * | 1989-03-08 | 1990-09-21 | ||
| JP2007151221A (en) * | 2005-11-24 | 2007-06-14 | Sony Corp | Actuator system and position adjusting unit of optical lens |
| DE102016108241A1 (en) * | 2016-05-03 | 2017-11-09 | Volkswagen Aktiengesellschaft | Adjusting means with an actuating element of a shape memory alloy and a dedicated working method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Liu et al. | Thermoelectric interface materials: a perspective to the challenge of thermoelectric power generation module | |
| Elsheikh et al. | A review on thermoelectric renewable energy: Principle parameters that affect their performance | |
| US4489742A (en) | Thermoelectric device and method of making and using same | |
| US6914343B2 (en) | Thermoelectric power from environmental temperature cycles | |
| US8841540B2 (en) | High temperature thermoelectrics | |
| EP1780811B1 (en) | Thermoelectric conversion module | |
| JPH0542838B2 (en) | ||
| JP6350817B2 (en) | Module group consisting of a combination of a thermoelectric conversion element and a π-type module group consisting of a thermoelectric material, a thermoelectric conversion element and a thermoelectric material. | |
| US20120305044A1 (en) | Thermal transfer and power generation systems, devices and methods of making the same | |
| JPH03155376A (en) | Thermoelectric generating element | |
| JPS61150678A (en) | Electric signal/mechanical amount converter and method of use thereof | |
| US9559280B2 (en) | Thermoelectric conversion device | |
| WO2014030264A1 (en) | Thermoelectric conversion element including in thermoelectric material space or space in which connection is made such that heat transfer amounts are reduced and working substance flow is equal to or greater than that for original thermoelectric material | |
| KR20190019767A (en) | Thermoelectric module and thermoelectric generator | |
| RU2604180C1 (en) | Thermoelectric energy converter | |
| JP5771852B2 (en) | A thermoelectric conversion element that includes a space part or a connected space part that reduces the amount of heat transfer to the thermoelectric material and the working material flow is greater than the original thermoelectric material | |
| JPS61171885A (en) | Actuator | |
| US3392439A (en) | Method and materials for obtaining low-resistance bonds to telluride thermoelectric bodies | |
| Li et al. | Grain boundaries softening thermoelectric oxide BiCuSeO | |
| JP2012178533A5 (en) | ||
| JPS6114771A (en) | Electric signal/mechanical amount converter | |
| Fuschillo et al. | Flat plate solar thermoelectric generator for near-earth orbits | |
| US3303058A (en) | Thermoelectric module | |
| JPS6122780A (en) | Electric signal/mechanical amount converter and controlling method therefor | |
| US3594237A (en) | Thermoelectric device including tungsten granules for obtaining low resistance bonds |