JPS61140602U - - Google Patents
Info
- Publication number
- JPS61140602U JPS61140602U JP2354985U JP2354985U JPS61140602U JP S61140602 U JPS61140602 U JP S61140602U JP 2354985 U JP2354985 U JP 2354985U JP 2354985 U JP2354985 U JP 2354985U JP S61140602 U JPS61140602 U JP S61140602U
- Authority
- JP
- Japan
- Prior art keywords
- transmission line
- semiconductor element
- wavelength
- characteristic impedance
- variable attenuator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005540 biological transmission Effects 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Waveguide Switches, Polarizers, And Phase Shifters (AREA)
- Non-Reversible Transmitting Devices (AREA)
Description
第１図は本考案による第１の実施例の構成を示
す回路図、第２図は、第１図の実施例をマイクロ
ストリツプ線路に適用した場合の構造を示す斜視
図、第３図は本考案による第２の実施例をマイク
ロストリツプ線路に適用した場合の構造を示す斜
視図、第４図は本考案による第３の実施例の構成
を示す回路図、第５図ａおよびｂは、従来の可変
減衰器のそれぞれ具体的な構成例を示す回路図で
ある。
図において、１３ａ，１３ｂはマイクロ波伝送
線路、１４ａ，１４′ａ，１４ｂ，１４′ｂは伝
送線路、１５はＰＩＮダイオード等の半導体素子
、１６は電界効果トランジスタ、１１は絶縁基板
、１２は接地導体である。
FIG. 1 is a circuit diagram showing the configuration of a first embodiment of the present invention, FIG. 2 is a perspective view showing the structure when the embodiment of FIG. 1 is applied to a microstrip line, and FIG. 4 is a perspective view showing the structure of the second embodiment of the invention applied to a microstrip line, FIG. 4 is a circuit diagram showing the structure of the third embodiment of the invention, and FIGS. FIG. 1b is a circuit diagram showing specific configuration examples of conventional variable attenuators. In the figure, 13a and 13b are microwave transmission lines, 14a, 14'a, 14b, and 14'b are transmission lines, 15 is a semiconductor element such as a PIN diode, 16 is a field effect transistor, 11 is an insulating substrate, and 12 is a ground. It is a conductor.
Claims (1)
体素子を接続し、該半導体素子のバイアス条件を
変えることにより前記第１および第２の伝送線路
間を通る高周波信号の減衰量を制御する可変減衰
器、または切換器において、前記第１の伝送線路
と前記半導体素子との間および前記第２の伝送線
路と前記半導体素子との間に、それぞれ前記第１
および第２の伝送線路の特性インピーダンスより
高い特性インピーダンスを有し、少なくとも１段
のステツプ状をした1/4波長伝送線路かテーパ状
をした1/8波長以上の長さの伝送線路のうちいず
れかの伝送線路をそれぞれ接続したことを特徴と
する可変減衰器、または切換器。 A semiconductor element is connected between a first transmission line and a second transmission line, and the amount of attenuation of a high frequency signal passing between the first and second transmission lines is controlled by changing the bias condition of the semiconductor element. In the variable attenuator or switch, the first
and a 1/4 wavelength transmission line with at least one step shape or a tapered transmission line with a length of 1/8 wavelength or longer, which has a characteristic impedance higher than the characteristic impedance of the second transmission line. A variable attenuator or a switching device characterized by connecting the above transmission lines to each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2354985U JPS61140602U (en) | 1985-02-22 | 1985-02-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2354985U JPS61140602U (en) | 1985-02-22 | 1985-02-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61140602U true JPS61140602U (en) | 1986-08-30 |
Family
ID=30516879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2354985U Pending JPS61140602U (en) | 1985-02-22 | 1985-02-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61140602U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62128201A (en) * | 1985-11-20 | 1987-06-10 | シーメンス・テレコムニカツイオーニ・ソチエタ・ペル・アチオニ | Microwave variable attenuator |
| WO2008093697A1 (en) * | 2007-01-31 | 2008-08-07 | Mitsubishi Electric Corporation | Microwave device, high frequency device and high frequency apparatus |
| CN103391111A (en) * | 2012-05-07 | 2013-11-13 | 株式会社村田制作所 | High-frequency module |
-
1985
- 1985-02-22 JP JP2354985U patent/JPS61140602U/ja active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62128201A (en) * | 1985-11-20 | 1987-06-10 | シーメンス・テレコムニカツイオーニ・ソチエタ・ペル・アチオニ | Microwave variable attenuator |
| WO2008093697A1 (en) * | 2007-01-31 | 2008-08-07 | Mitsubishi Electric Corporation | Microwave device, high frequency device and high frequency apparatus |
| CN103391111A (en) * | 2012-05-07 | 2013-11-13 | 株式会社村田制作所 | High-frequency module |
| JP2013236166A (en) * | 2012-05-07 | 2013-11-21 | Murata Mfg Co Ltd | High frequency module |
| US9166285B2 (en) | 2012-05-07 | 2015-10-20 | Murata Manufacturing Co., Ltd. | High-frequency module |
| CN103391111B (en) * | 2012-05-07 | 2015-11-04 | 株式会社村田制作所 | High-frequency model |
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