JPS61135114A - Vapor growth device - Google Patents

Vapor growth device

Info

Publication number
JPS61135114A
JPS61135114A JP25793284A JP25793284A JPS61135114A JP S61135114 A JPS61135114 A JP S61135114A JP 25793284 A JP25793284 A JP 25793284A JP 25793284 A JP25793284 A JP 25793284A JP S61135114 A JPS61135114 A JP S61135114A
Authority
JP
Japan
Prior art keywords
gas
umbrella
vapor phase
phase growth
gas nozzle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25793284A
Other languages
Japanese (ja)
Inventor
Masanori Hashimoto
橋本　政則
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP25793284A priority Critical patent/JPS61135114A/en
Publication of JPS61135114A publication Critical patent/JPS61135114A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To prevent the adhesion of silicon to the umbrella of a gas nozzle and the generation of the defect of a wafer by providing the umbrella which has the circulating route of a gas for vapor phase growth before spouting inside and is made the reflection surface of the gas after spouting at the top of the gas nozzle. CONSTITUTION:A quartz gas nozzle 36 is provided at the upper center of a heating table 32 and the gas nozzle 36 has a dual pipe construction of inner pipe 36a and outer pipe 36b. Plural gas nozzles 37, 37... are provided on the side wall of the outer pipe 36b and an umbrella 38 is provided at the top of the outer pipe 36b. The umbrella 38 has a circulating route A which enables a gas for vapor phase growth to circulate in the umbrella 38 and an aperture 39 is provided at the top of the inner pipe 36a. Around the nozzle 36 is made a high temperature of more than 1,000 deg.C by the radiation heat from the heating table 32 but the circulation of normal temperature hydrogen gas and a gas for vapor phase growth in the umbrella 38 of the gas nozzle 36 has cooling effect and the umbrella 38 is made a comparatively low temperature. This prevents the adhesion of silicon to the umbrella 38 even if the gas for vapor phase growth is thermally decomposed.

Description

【発明の詳細な説明】 ［発明の技術分野］ 本発明は半導体装置の製造に用いられる気相成長装置に
係り、特に縦型気相成長装置の成長用ガスの噴出に用い
られるガスノズルの改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a vapor phase growth apparatus used for manufacturing semiconductor devices, and particularly relates to an improvement in a gas nozzle used for ejecting growth gas in a vertical vapor growth apparatus. .

［発明の技術的背景Ｊ 半導体装置の製造工程に於いては、デバイス間配線の相
互絶縁や、デバイス構造完成後の保護膜形成などのよう
に、構造がある程度出来上がった後に絶縁膜を形成する
必要がある。[Technical Background of the Invention J In the manufacturing process of semiconductor devices, it is necessary to form an insulating film after the structure has been completed to a certain extent, such as mutual insulation of interconnects between devices and formation of a protective film after the device structure is completed. There is.

このような場合、従来、例えば第１図に示すようなＩｌ
ｌ型気相成長装置が用いられている。同図に於いて、１
１は反応容器（ベルジャ）であり、この反応容器１１内
には加熱台１２が設けられている。加熱台１２上には複
数のシリコンウェハ１３．１３・・・が載置され、ＲＦ
コイル１４により高周波加熱されるようになっている。In such cases, conventionally, for example, Il as shown in FIG.
An L-type vapor phase growth apparatus is used. In the same figure, 1
Reference numeral 1 denotes a reaction vessel (bell jar), and a heating table 12 is provided inside this reaction vessel 11 . A plurality of silicon wafers 13, 13... are placed on the heating table 12, and RF
High frequency heating is performed by the coil 14.

加熱台１２は回転軸１５を介して図示しない駆動上−タ
により回転可能となっている。The heating table 12 is rotatable via a rotating shaft 15 by a drive motor (not shown).

加熱台１２の中央上部には石英製のガスノズル１６が配
設されている。このガスノズル１６は回転軸１５の間を
通して供給された気相成長用ガスを噴出口１７゜１７・
・・からシリコンウェハ１３．１３・・・の上部に噴出
するものである。気相成長用ガスとしては、モノシラン
（３ｉＨ＋）、トリクロルシラン（ＳｉＨＣｌ２）、ジ
クロルシラン（ＳｉＨ２Ｃ＋３）等が使用される。ガス
ノズル１６の上端部には傘部１９が設けられ、この傘部
１９により噴出したガスをシリコンウェハ１３．１３・
・・上部に反射させ、これによりシリコンウェハ１３．
１３・・・全体に渡って均一な気相成長を施すようにな
っている。A gas nozzle 16 made of quartz is arranged at the upper center of the heating table 12. This gas nozzle 16 supplies gas for vapor phase growth supplied through between the rotating shaft 15 and the ejection ports 17, 17, and 17.
... is ejected onto the top of the silicon wafer 13.13. As the gas for vapor phase growth, monosilane (3iH+), trichlorosilane (SiHCl2), dichlorosilane (SiH2C+3), etc. are used. An umbrella part 19 is provided at the upper end of the gas nozzle 16, and the gas ejected by this umbrella part 19 is directed to silicon wafers 13, 13,
...is reflected to the upper part, thereby causing the silicon wafer 13.
13... Uniform vapor phase growth is performed over the entire area.

すなわち、この気相成長装置に於いては、加熱台１２上
のシリコンウェハ１３．１３・・・を加熱させながら回
転させ、ガスノズル１６から気相成長ガスを噴出させて
シリコンウェハ１３．１３・・・上に膜の形成を行うも
のである。That is, in this vapor phase growth apparatus, the silicon wafers 13, 13, .・A film is formed on top.

［背景技術の問題点］ 前述のように気相成長用ガスとしては、熱分解の速いモ
ノシラン等が用いられている。このため、従来の気相成
長装置にあっては、成長時、加熱台１２から輻射熱が発
生するため、その影響により気相成長ガスが分解し、そ
の結果傘部１９の下面にシリコン２０が粉状に付着する
。そして、これがシリコンウェハ１３．１３・・・の表
面に飛び込んで突起物や微小の粒子がウェハ全体に飛散
り、ＰＥＰ（Ｐｈ。[Problems with Background Art] As described above, monosilane, which is rapidly decomposed by heat, is used as a gas for vapor phase growth. For this reason, in the conventional vapor phase growth apparatus, radiant heat is generated from the heating table 12 during growth, so the vapor phase growth gas is decomposed due to the influence of the radiant heat, and as a result, the silicon 20 is powdered on the lower surface of the umbrella part 19. It adheres to the shape. This then jumps onto the surface of the silicon wafer 13.13... and protrusions and minute particles are scattered all over the wafer, resulting in PEP (Ph.

ｔｏ　　Ｅ　ｔｃｈｉｎｇＰ　ｒｏｃｅｓｓ）時のマス
クに傷をつけるばかりでなく、超ＬＳＩのように集積化
された電気回路に於いては断線を引き起こし、歩留り低
下の大きな原因ともなっている。This not only damages the mask during the etching process, but also causes disconnection in integrated electrical circuits such as VLSIs, and is a major cause of lower yields.

また、傘部１９にシリコン２０が付着したガスノズル１
６を薬品で洗浄すると、ガスノズル１６が不透明となり
、石英のクズが発生するので、再度使用すことが不可能
となり、極めて不経済であった。Moreover, the gas nozzle 1 with silicone 20 attached to the umbrella part 19
If the gas nozzle 6 is cleaned with chemicals, the gas nozzle 16 becomes opaque and quartz debris is generated, making it impossible to use it again, which is extremely uneconomical.

［発明の目的］ 本発明は上記実情に鑑みてなされたもので、その目的は
、加熱台からの輻射熱の影響によるシリコンのガスノズ
ルの傘部への付着を防止し、ウェハ欠陥の発生を防止す
ることができ、歩留りを向上させることのできる気相成
長装置を提供することにある。[Object of the Invention] The present invention has been made in view of the above-mentioned circumstances, and its purpose is to prevent silicon from adhering to the cap of the gas nozzle due to the influence of radiant heat from the heating table, thereby preventing the occurrence of wafer defects. An object of the present invention is to provide a vapor phase growth apparatus capable of improving yield.

［発明の概要］ 本発明は、複数の半導体ウェハが載置された加熱台を回
転させながらガスノズルから気相成長用ガスを噴出させ
て同半導体ウェハ上に膜を形成する縦型気相成長装置に
於いて、前記ガスノズルの上端部に、内部に前記噴出前
の気相成長用ガスの循環路を有すると共に噴出後の気相
成長用ガスの反射面となる傘部を設けるものである。[Summary of the Invention] The present invention provides a vertical vapor phase growth apparatus that forms a film on a plurality of semiconductor wafers by ejecting vapor phase growth gas from a gas nozzle while rotating a heating table on which a plurality of semiconductor wafers are placed. In this, an umbrella portion is provided at the upper end of the gas nozzle, which has an internal circulation path for the vapor phase growth gas before being ejected and serves as a reflective surface for the vapor growth gas after being ejected.

このような構成であれば、ガスノズルの外部の高温雰囲
気に比較して、傘部内部には低温（常温）の気相成長ガ
スが水素ガス（Ｈ２）と共に循環するので傘部が冷却さ
れる。このため、加熱時の輻射熱により気相成長用ガス
が熱分解されても、傘部にシリコンが付着することはな
くなる。With this configuration, compared to the high-temperature atmosphere outside the gas nozzle, the vapor growth gas at a lower temperature (room temperature) circulates inside the cap part together with hydrogen gas (H2), so that the cap part is cooled. Therefore, even if the gas for vapor phase growth is thermally decomposed by radiant heat during heating, silicon will not adhere to the umbrella portion.

［発明の実施例コ 以下、図面を参照して本発明の一実施例を説明する。同
図に於いて、３１は反応容器（ベルジャ）であり、この
反応容器３１内には加熱台３２が設けられている。加熱
台３２上には複数のシリコンウェハ３３、３３・・・が
載置され、ＲＦコイル３４により高周波加熱が行われる
ようになっている。加熱台３２は回転軸３５を介して図
示しない駆動モータにより回転可能となっている。加熱
台３２の中央上部には石英製のガスノズル３６が配設さ
れている。このガスノズル３６は内管３６ａ及び外管３
６ｂの二重管構造となっている。外管３６ｂの側壁部に
は複数のガス噴出口３７．３７・・・が設けられている
。また、外管３６の上端部には傘部３８が設けられてい
。る。この傘部３８には循環路Ａが設けられており、傘
部３８内を気相成長用ガスが循環できるようになってい
る。一方、内情３６ａにはその上端部に開口３９が設け
られている。気相成長用ガスとしては、モノシラン（Ｓ
ｉＨ４）、トリクロルシラン（ＳｉＨ奪Ｃ１３）、ジク
ロルシラン（ＳｉＨｚＣｌｉ）等が用いられている。[Embodiment of the Invention] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the figure, 31 is a reaction container (bell jar), and a heating table 32 is provided inside this reaction container 31. A plurality of silicon wafers 33, 33, . The heating table 32 is rotatable via a rotating shaft 35 by a drive motor (not shown). A gas nozzle 36 made of quartz is arranged at the upper center of the heating table 32. This gas nozzle 36 includes an inner pipe 36a and an outer pipe 3.
6b double tube structure. A plurality of gas outlets 37, 37, . . . are provided in the side wall of the outer tube 36b. Further, an umbrella section 38 is provided at the upper end of the outer tube 36. Ru. This umbrella section 38 is provided with a circulation path A, so that gas for vapor phase growth can be circulated inside the umbrella section 38. On the other hand, the internal information 36a is provided with an opening 39 at its upper end. Monosilane (S
iH4), trichlorosilane (SiH deprived C13), dichlorosilane (SiHzCli), etc. are used.

この気相成長装置に於いては、成長ガスは、水素ガス（
Ｈ２）と共に回転軸３５内を通してガスノズル３６の内
管３６ａに導かれ、その間口３９から噴出される。この
ガスは、図に矢印で示すように外管３６ｂの傘部３８内
を循環した後、噴出口３７．３７・・・から噴出されれ
、その一部は傘部３８の下面部で反射され、これにより
ウェハ３３．３３・・・全体に渡って均一な成長が行わ
れる。In this vapor phase growth apparatus, the growth gas is hydrogen gas (
H2) is guided through the rotating shaft 35 to the inner pipe 36a of the gas nozzle 36, and is ejected from the opening 39 therebetween. After this gas circulates within the umbrella part 38 of the outer tube 36b as shown by the arrow in the figure, it is ejected from the jet ports 37, 37, etc., and a part of it is reflected by the lower surface of the umbrella part 38. As a result, uniform growth is performed over the entire wafer 33, 33....

すなわち、本発明の気相成長装置にあっては、ノズル３
６の周囲は加熱台３２からの輻射熱により１０００℃以
上の高温になるが、一方、ガスノズル３６の傘部３８内
には常温の水素ガス（Ｈ２）及び気相成長ガスが循環し
ているため冷却効果を有し、傘部３６は比較的低温とな
る。したがって、従来のように気相成長用ガスが熱分解
しても傘部３８にシリコンが付着するようなことはなく
なる。That is, in the vapor phase growth apparatus of the present invention, the nozzle 3
The area around the gas nozzle 6 reaches a high temperature of 1000°C or more due to radiant heat from the heating table 32, but on the other hand, hydrogen gas (H2) and vapor growth gas at room temperature circulate inside the umbrella part 38 of the gas nozzle 36, so it is cooled. This has the effect that the temperature of the umbrella section 36 becomes relatively low. Therefore, even if the gas for vapor phase growth is thermally decomposed, silicon will not adhere to the umbrella portion 38 as in the conventional case.

尚、上記実施例に於いては、ガスノズル３６を二重管構
造としたが、内管３６ａは必ずしも必要でなく、第２図
に示すように外管３６ｂのみの構造としてもよい。また
、傘部３８の形状は任意であり、要は成長ガスが循環で
きる構造であればよい。In the above embodiment, the gas nozzle 36 has a double-tube structure, but the inner tube 36a is not necessarily required, and the structure may include only the outer tube 36b as shown in FIG. Further, the shape of the umbrella portion 38 is arbitrary, as long as it has a structure that allows growth gas to circulate.

ざらに、ガス噴出口３７．３７・・・はガスノズル３６
の側壁に設けることなく、第３図に示すように傘部３８
の底面部に設けるようにしてもよい。また、上記実施例
に於いては、シリコンの単結晶膜を気相成長させる場合
について説明したが、ざらに低湿酸化膜、多結晶シリコ
ン膜を気相成長させる場合にも適用できることは勿論で
ある。Roughly speaking, the gas outlet 37.37... is the gas nozzle 36.
As shown in FIG.
It may also be provided on the bottom of the. Further, in the above embodiment, the case where a silicon single crystal film is grown in a vapor phase is explained, but it is of course applicable to the case where a low humidity oxide film or a polycrystalline silicon film is grown in a vapor phase. .

［発明の効果］ 以上のように本発明によれば、加熱台からの輻射熱の影
響により気相成長装置が分解しても、傘部にシリコンが
付着する恐れがない。したがって、ウェハに突起物が生
じたりする等の悪影響を与えることかなく、素子の歩留
り低下を防止することができる。[Effects of the Invention] As described above, according to the present invention, even if the vapor growth apparatus is decomposed due to the influence of radiant heat from the heating table, there is no fear that silicon will adhere to the umbrella portion. Therefore, it is possible to prevent a decrease in the yield of devices without causing any adverse effects such as the formation of protrusions on the wafer.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の一実施例に係る気相成長装置の構成を
示す断面図、第２図及び第３図はそれぞれ本発明の他の
実施例に係るガスノズルの構成を示す断面図、第４図は
従来の気相成長装置の構成を示す断面図である。 ３１・・・反応容器、３２・・・加熱台、３３・・・シ
リコンウェハ、３６・・・ガスノズル、３１・・・ガス
噴出口、３８・・・傘部。 Ａ・・・循環路。 出願人代理人　弁理士　鈴　江　武　彦第１図 第２図　　　　　第３図 第４図FIG. 1 is a cross-sectional view showing the structure of a vapor phase growth apparatus according to an embodiment of the present invention, and FIGS. 2 and 3 are cross-sectional views showing the structure of a gas nozzle according to another embodiment of the present invention. FIG. 4 is a sectional view showing the configuration of a conventional vapor phase growth apparatus. 31... Reaction container, 32... Heating table, 33... Silicon wafer, 36... Gas nozzle, 31... Gas spout, 38... Umbrella part. A... Circulation path. Applicant's representative Patent attorney Takehiko Suzue Figure 1 Figure 2 Figure 3 Figure 4

Claims (1)

【特許請求の範囲】[Claims] 　反応容器と、この反応容器内に配設され、複数の半導
体ウェハが載置される加熱台と、この加熱台を回転させ
る回転機構と、前記半導体ウェハの上部に気相成長用ガ
スを噴出するガスノズルと、このガスノズルの上端部に
設けられ、その内部に噴出前の気相成長用ガスの循環路
を有すると共に、噴出後の気相成長用ガスを前記半導体
ウェハの上部に反射する傘部とを具備したことを特徴と
する気相成長装置。A reaction vessel, a heating table disposed in the reaction vessel on which a plurality of semiconductor wafers are placed, a rotation mechanism for rotating the heating table, and a gas for vapor phase growth spouted onto the top of the semiconductor wafers. a gas nozzle; and an umbrella part provided at the upper end of the gas nozzle, having a circulation path for the vapor phase growth gas before being ejected therein, and reflecting the vapor phase growth gas after being ejected to the upper part of the semiconductor wafer. A vapor phase growth apparatus characterized by comprising:
JP25793284A 1984-12-06 1984-12-06 Vapor growth device Pending JPS61135114A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25793284A JPS61135114A (en) 1984-12-06 1984-12-06 Vapor growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25793284A JPS61135114A (en) 1984-12-06 1984-12-06 Vapor growth device

Publications (1)

Publication Number Publication Date
JPS61135114A true JPS61135114A (en) 1986-06-23

Family

ID=17313197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25793284A Pending JPS61135114A (en) 1984-12-06 1984-12-06 Vapor growth device

Country Status (1)

Country Link
JP (1) JPS61135114A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4825809A (en) * 1987-03-17 1989-05-02 Fujitsu Limited Chemical vapor deposition apparatus having an ejecting head for ejecting a laminated reaction gas flow
US6002109A (en) * 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US7147718B2 (en) * 2000-09-01 2006-12-12 Aixtron Ag Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates
DE4428992B4 (en) * 1993-08-16 2009-09-10 Ebara Corp. CVD coating apparatus and its use

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4825809A (en) * 1987-03-17 1989-05-02 Fujitsu Limited Chemical vapor deposition apparatus having an ejecting head for ejecting a laminated reaction gas flow
DE4428992B4 (en) * 1993-08-16 2009-09-10 Ebara Corp. CVD coating apparatus and its use
US6002109A (en) * 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US6403925B1 (en) 1995-07-10 2002-06-11 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US7147718B2 (en) * 2000-09-01 2006-12-12 Aixtron Ag Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates

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