JPS61135113A - Vapor growth device - Google Patents

Vapor growth device

Info

Publication number
JPS61135113A
JPS61135113A JP25781884A JP25781884A JPS61135113A JP S61135113 A JPS61135113 A JP S61135113A JP 25781884 A JP25781884 A JP 25781884A JP 25781884 A JP25781884 A JP 25781884A JP S61135113 A JPS61135113 A JP S61135113A
Authority
JP
Japan
Prior art keywords
susceptor
wafer
frequency induction
induction heating
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25781884A
Other languages
Japanese (ja)
Inventor
Yoshio Haseno
長谷野　義男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP25781884A priority Critical patent/JPS61135113A/en
Publication of JPS61135113A publication Critical patent/JPS61135113A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide

Abstract

PURPOSE:To contrive uniform distribution of temperature in a susceptor and a wafer by providing the circular disk type susceptor for heat retaining to place the wafer to be treated making a susceptor table at the center of the susceptor the same quality with the susceptor. CONSTITUTION:A table 7-1 which has the same quality with a susceptor 8 and a support and rotation shaft 7-2 for the table are provided at the center of the susceptor 8. The table is as if the area of the susceptor is increased and heat retaining effect is increased in high frequency induction heating reducing heat dissipation. That is, the susceptor can be made nearly uniform characteristics in both temperature rising and falling. By utilizing the high frequency induction heating effectively in such a way, inner circumference heat dissipation is prevented, the adjustment to obtain the optimum temperature distribution is made extremely easy and the improvement of the operating rate of the device, saving of a material and the improvement of quality can be contrived.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は高温に加熱した半導体基板に反応ガスを接触さ
せ該半導体基板に反応ガスを含む物質それ自身ま九は基
板との間に起る化学反応を利用して所望物質を該基板に
結晶成長させるのに用いる気相成長装置に関するもので
ある。[Detailed Description of the Invention] [Industrial Application Field] The present invention involves contacting a semiconductor substrate heated to a high temperature with a reactive gas, and causing a substance containing the reactive gas to occur between the semiconductor substrate and the substrate. The present invention relates to a vapor phase growth apparatus used to grow crystals of a desired substance onto a substrate using a chemical reaction.

〔従来の技術〕[Conventional technology]

第２図はこのような気相成長装置の一実施例の断面−で
ある。第２図に於いて、ベースプレート１の上にペルジ
ャー２が０−ＩＪｙグ３を介して気密に載置され止め具
、４により固定されている。このペルジャー２内の中央
位置にベースプレート１を貫通して反応ガス１１を導入
するためのノズル５が設けられている。さらにノズル５
の外周に接してサセプター受け台を兼ねた回転軸６が設
けられ半導体基板（以下ウニへ−という）１５が載置さ
れるための円板型サセプター８が取り付けられ、サセプ
ター８の下側には反応ガスを遮蔽するためノコイル・カ
バー９を介してスパイラル状の高周波誘導加熱コイル１
０が取り付けられている。　　　　　′かかる構成にお
いて、誘導によりサセプタ−８・　に載置されたウェハ
ー１５は加熱される。同時にサセプター８はモーター１
２に対しベルト１３により結合されたサセプター受け台
無用回転軸６０回転と共に回転して均一加熱される。一
方、この加熱中反応ガス１１がノズル５より噴出口５ａ
から噴出されウェハー１５上に均質な膜を成長させる。FIG. 2 is a cross section of one embodiment of such a vapor phase growth apparatus. In FIG. 2, a Pelger 2 is airtightly placed on a base plate 1 via an O-IJy pin 3 and fixed with a stopper 4. A nozzle 5 is provided at the center of the Pelger 2 to penetrate the base plate 1 and introduce the reaction gas 11. Furthermore, nozzle 5
A disk-shaped susceptor 8 on which a semiconductor substrate (hereinafter referred to as "Uni-he") 15 is mounted is provided with a rotating shaft 6 that also serves as a susceptor holder in contact with the outer periphery of the susceptor 8. A spiral high-frequency induction heating coil 1 is connected through a no-coil cover 9 to shield reaction gas.
0 is attached. 'In such a configuration, the wafer 15 placed on the susceptor 8 is heated by induction. At the same time, susceptor 8 is motor 1
2, the susceptor holder is rotated together with 60 rotations of the rotating shaft 60 connected to the susceptor holder by a belt 13, thereby uniformly heating the susceptor holder. On the other hand, during heating, the reaction gas 11 is ejected from the nozzle 5 through the spout 5a.
A homogeneous film is grown on the wafer 15.

この際、膜厚分布はノズル５の垂直方向の出し入れによ
り調節される。ノズルの噴出口５ａから噴出したガスは
排気管１４からペルジャー外に排出される。At this time, the film thickness distribution is adjusted by moving the nozzle 5 in and out in the vertical direction. The gas ejected from the ejection port 5a of the nozzle is discharged from the exhaust pipe 14 to the outside of the Pelger.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

ところで、このような従来の気相成長装置では、目標温
度に対して一成長膜厚分布を均一にすることは容易であ
るが、目標温度に対してはサセプタ−８全体の温度は中
央部にくらべ内外局部は熱放出が多く、特に内周部は石
英製サセプター受け台６があるため温度を高くしておか
なければならない。By the way, in such a conventional vapor phase growth apparatus, it is easy to make the thickness distribution of one grown film uniform with respect to the target temperature. In comparison, a lot of heat is released from the internal and external parts, and the temperature must be kept high especially at the inner peripheral part, where there is a susceptor pedestal 6 made of quartz.

従ってサセプター及びクエ７〜−に対して昇降温時に温
度変化が大きく々リサセプターのクラック（破損）ｉた
結晶欠陥を発生させるという欠点がある。Therefore, there is a drawback in that the susceptor and the susceptors 7-- undergo large temperature changes when the temperature is raised and lowered, which causes cracks (damage) and crystal defects in the susceptor.

このような欠点は装置を大型化しサセプターを大口径化
にするほど顕著に現われるので装置の大型化にとって極
めて重要な問題となってくる。These drawbacks become more noticeable as the device becomes larger and the diameter of the susceptor becomes larger, and thus becomes an extremely important problem as the device becomes larger.

本発明の目的は、サセプター受け台に載置されたサセプ
ター及びウェハーに対して均一な温度分布の得られる気
相成長装置を提供する。An object of the present invention is to provide a vapor phase growth apparatus that can provide a uniform temperature distribution for a susceptor and a wafer placed on a susceptor pedestal.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の気相成長装置は、サセプター中央部のサセプタ
ー受け台をサセプターと同質にして保温用として設けら
れた被処理ウェハーを載置するだめの円板型サセプター
を備えた装置である。The vapor phase growth apparatus of the present invention is an apparatus including a disk-shaped susceptor on which a wafer to be processed is placed, the susceptor holder at the center of the susceptor being made the same as the susceptor and provided for heat retention.

〔実施例〕〔Example〕

つぎに本発明を図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第１図は本発明の一実施例の断面図である。第１図に於
いてベースプレート１、ペルジャー２、サセプター８、
コイルカバー９、高周波誘導コイル１０等は第１図に示
す従来装置と変りはない。FIG. 1 is a sectional view of an embodiment of the present invention. In Fig. 1, base plate 1, Pelger 2, susceptor 8,
The coil cover 9, high frequency induction coil 10, etc. are the same as the conventional device shown in FIG.

但しサセプター８の中央部にサセプター８と同質の受け
台７−１及び同すセグター受け台支持回転軸７−２（石
英製）が設けられている。この受け台は恰かもサセプタ
ー面積を大きくしたと同じようになり高周波誘導加熱さ
れた際、熱放出をすくなくして保温効果を大きくする。However, in the center of the susceptor 8, a pedestal 7-1 of the same quality as the susceptor 8 and a segmenter pedestal support rotating shaft 7-2 (made of quartz) are provided. This pedestal is similar to increasing the susceptor area, and when high-frequency induction heating is performed, it reduces heat release and increases the heat retention effect.

即ちサセプターそのものは昇降温時供に全体に均一に近
い特性にすることが出来る。That is, the susceptor itself can have nearly uniform characteristics throughout as the temperature rises and falls.

〔発明の効果〕〔Effect of the invention〕

このようにして高周波誘導加熱を有効に利用することに
より内周の熱放出を防ぎ最適の温度分布を得るだめの調
整が極めてやり易くなり装置の稼動率向上、資材の節約
、品質向上が図れる。By effectively utilizing high-frequency induction heating in this manner, it is extremely easy to make adjustments to prevent heat release from the inner periphery and obtain an optimal temperature distribution, thereby improving the operating rate of the device, saving materials, and improving quality.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の一実施例を示す断面図、第２図は従来
の気相成長装置の一例の断面図である。 １・・・・・・ベースプレート、２・・・・・・ペルジ
ャー、３・・・・・・０−リング、４・・・・・・止め
具、５・・・・・・ノズル、５ａ・・・・・・噴出口、
６・−・・・・サセプター受け台兼回転軸、７−１・・
・・・・サセプター受け台（ＳｉＣ製）、７−２・・・
・・・サセプター受け支持回転軸（石英製）、８・・・
・・・ＳｉＣコートサセプター、９・・・・・・ゴイル
カノ（−１１０・・・・・・コイル、１１・・−・・・
反応ガス、１２・・・・・・モーター、１３・・・・・
・ベルト　１４・・・・・・排出管、１５・・・・・・
ウェハー。FIG. 1 is a sectional view showing an embodiment of the present invention, and FIG. 2 is a sectional view of an example of a conventional vapor phase growth apparatus. 1...Base plate, 2...Pelger, 3...0-ring, 4...Stopper, 5...Nozzle, 5a. ... spout,
6.--Susceptor cradle and rotating shaft, 7-1..
...Susceptor pedestal (made of SiC), 7-2...
...Susceptor support rotating shaft (made of quartz), 8...
...SiC coated susceptor, 9... Goilano (-110... Coil, 11... -...
Reaction gas, 12...Motor, 13...
・Belt 14...Discharge pipe, 15...
wafer.

Claims (1)

【特許請求の範囲】[Claims] 　円板型サセプターを有する気相成長装置に於いて、前
記円板型サセプターと同質の受け台を設けることによっ
て、高周波誘導加熱する際にサセプターからの熱放出を
防止しサセプター有効面積内の温度分布を均一化にする
ことを特徴とする気相成長装置。In a vapor phase growth apparatus having a disc-shaped susceptor, by providing a pedestal of the same quality as the disc-shaped susceptor, heat release from the susceptor is prevented during high-frequency induction heating, and the temperature distribution within the effective area of the susceptor is improved. A vapor phase growth apparatus characterized by uniformizing the
JP25781884A 1984-12-06 1984-12-06 Vapor growth device Pending JPS61135113A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25781884A JPS61135113A (en) 1984-12-06 1984-12-06 Vapor growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25781884A JPS61135113A (en) 1984-12-06 1984-12-06 Vapor growth device

Publications (1)

Publication Number Publication Date
JPS61135113A true JPS61135113A (en) 1986-06-23

Family

ID=17311548

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25781884A Pending JPS61135113A (en) 1984-12-06 1984-12-06 Vapor growth device

Country Status (1)

Country Link
JP (1) JPS61135113A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10163303A (en) * 1996-11-22 1998-06-19 Samsung Electron Co Ltd Wafer stage for semiconductor device manufacturing apparatus
US5902407A (en) * 1987-03-31 1999-05-11 Deboer; Wiebe B. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
EP1358368A1 (en) * 2001-02-07 2003-11-05 Emcore Corporation Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
WO2009075747A1 (en) * 2007-12-12 2009-06-18 Veeco Instruments Inc. Wafer carrier with hub
US9816184B2 (en) 2012-03-20 2017-11-14 Veeco Instruments Inc. Keyed wafer carrier

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5902407A (en) * 1987-03-31 1999-05-11 Deboer; Wiebe B. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
JPH10163303A (en) * 1996-11-22 1998-06-19 Samsung Electron Co Ltd Wafer stage for semiconductor device manufacturing apparatus
EP1358368A1 (en) * 2001-02-07 2003-11-05 Emcore Corporation Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
EP1358368A4 (en) * 2001-02-07 2011-03-02 Veeco Instr Inc Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
EP1358368B1 (en) 2001-02-07 2016-04-13 Veeco Instruments Inc. Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
WO2009075747A1 (en) * 2007-12-12 2009-06-18 Veeco Instruments Inc. Wafer carrier with hub
US8021487B2 (en) 2007-12-12 2011-09-20 Veeco Instruments Inc. Wafer carrier with hub
US8231940B2 (en) 2007-12-12 2012-07-31 Veeco Instruments Inc. Wafer processing method with carrier hub removal
TWI396247B (en) * 2007-12-12 2013-05-11 Veeco Instr Inc Wafer carrier with hub
US9816184B2 (en) 2012-03-20 2017-11-14 Veeco Instruments Inc. Keyed wafer carrier

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