JPS61129645A - Formation of electron beam resist pattern - Google Patents
Formation of electron beam resist patternInfo
- Publication number
- JPS61129645A JPS61129645A JP25090484A JP25090484A JPS61129645A JP S61129645 A JPS61129645 A JP S61129645A JP 25090484 A JP25090484 A JP 25090484A JP 25090484 A JP25090484 A JP 25090484A JP S61129645 A JPS61129645 A JP S61129645A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- layer
- pattern
- dry etching
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Silver Salt Photography Or Processing Solution Therefor (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は感度と解像性に優れた電子線レジストパターン
の形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for forming an electron beam resist pattern with excellent sensitivity and resolution.
電子回路素子特にＩＣ，ＬＳＩなどの半導体素子に微細
なパターンを形成する方法として薄膜形成技術と写真食
刻技術（ホト−リソグラフィ）が多用されている。2. Description of the Related Art Thin film formation technology and photolithography are widely used as methods for forming fine patterns on electronic circuit elements, particularly semiconductor elements such as ICs and LSIs.
ここで写真食刻技術は被処理基板の上にスピンコード法
などの方法でホトレジストを被覆し、これにマスクを通
して紫外線の照射を行って感光させるもので、露光部が
現像液に対して溶解度の差を生じるのを利用してレジス
トパターンの形成を行う。In the photo-etching technology, a photoresist is coated on the substrate to be processed using a method such as a spin code method, and the photoresist is irradiated with ultraviolet rays through a mask to expose the photoresist. A resist pattern is formed by taking advantage of the difference.
ここでパターン形成の型として光照射部が現像液に不溶
となるネガタイプと可溶となる禄シタイブとがある。Here, as patterns for pattern formation, there are two types: a negative type in which the light irradiated part is insoluble in the developer, and a negative type in which the light irradiated part is soluble.
さて従来の紫外線露光によるパターン形成法では波長に
よる制限から微細パターンの形成は１μｍ以上の線幅の
パターンに限られ、これ以下の微細パターンの形成は困
難である。Now, in the conventional pattern forming method using ultraviolet light exposure, the formation of fine patterns is limited to patterns with a line width of 1 μm or more due to wavelength limitations, and it is difficult to form fine patterns smaller than this.
一方電子線、Ｘ線、イオンビームなどの電離放射線はそ
の波長が紫外線に較べて温かに小さいために１μｍ未満
の線幅をもつ微細パターンの形成に適している。On the other hand, ionizing radiation such as electron beams, X-rays, and ion beams has a warmer wavelength and is smaller than that of ultraviolet rays, and therefore is suitable for forming fine patterns with line widths of less than 1 μm.
例えば電子ビームの波長は加速電圧によって異なるが０
．１人程度であり、光の波長に較べて４桁以上も短いた
めに大きな解像力が期待でき、０．１μｍ幅のパターン
形成も可能となる。For example, the wavelength of an electron beam varies depending on the accelerating voltage, but 0
．． It requires only one person and is more than four orders of magnitude shorter than the wavelength of light, so great resolution can be expected, and it is also possible to form a pattern with a width of 0.1 μm.
そのため微細パターンの形成には従来の紫外線露光に代
わって電離放射線露光が使われるようになった。For this reason, ionizing radiation exposure has come to be used instead of conventional ultraviolet exposure to form fine patterns.
ここで、かかる目的に使用するレジストは感光する波長
が全く異なるために従来のホトレジストを使用したので
は感度、解像度などが悪く、良い結果を得ることができ
ない。Here, since the resists used for this purpose are sensitive to completely different wavelengths, if conventional photoresists are used, the sensitivity and resolution will be poor, and good results will not be obtained.
そこで電離放射線用に適した独自のレジストが開発され
ており、一般名称として電子線レジストと呼称されてい
る。Therefore, a unique resist suitable for use with ionizing radiation has been developed, and is commonly referred to as an electron beam resist.
本発明はかかる目的に開発したネガ型レジストに関する
ものである。The present invention relates to a negative resist developed for this purpose.
単層のネガ型電子線レジストとして従来はクロロメチル
化ポリスチレン（ＣＭＳ）や環化ポリイソプレン等が使
用されていた。Conventionally, chloromethylated polystyrene (CMS), cyclized polyisoprene, and the like have been used as single-layer negative electron beam resists.
然しこれらのレジストは膜厚を厚くすると解像性が低下
し、一方膜厚を薄くすると解像性は高くなるが被処理基
板をドライエツチングする禅の耐性が不充分で共にエツ
チングされてしまうと云う問題がある。However, when the film thickness of these resists is increased, the resolution decreases, while when the film thickness is decreased, the resolution increases, but the resistance to dry etching of the substrate to be processed is insufficient, and the resist may be etched along with the substrate. There is a problem.
そこでこの問題を解決するためにレジスト膜を二層構造
とし、上層には解像性能をまた下層にはドライエツチン
グ耐性を持たせた二層レジストが開発されており、上層
の材料としてクロロメチル化ポリフェニルシロキサンな
どが用いられているが、この感度は約１０μＣ／−と低
く、量産工程で使用するには感度を更に５〜１０倍向上
する必要がある。Therefore, in order to solve this problem, a two-layer resist has been developed in which the resist film has a two-layer structure, the upper layer has resolution performance, and the lower layer has dry etching resistance. Although polyphenylsiloxane and the like are used, the sensitivity is as low as about 10 μC/-, and the sensitivity needs to be further improved by a factor of 5 to 10 for use in a mass production process.
以上記したように解像性と耐ドライエツチング性の優れ
た電子線レジストを実用化す２には二層構造をとるのが
良いが、感度と解像度が共に優れたレジストが存在しな
いことが問題である。As mentioned above, in order to commercialize an electron beam resist with excellent resolution and dry etching resistance, it is better to have a two-layer structure, but the problem is that there is no resist with excellent sensitivity and resolution. be.
上記の問題は被処理基板上に耐ドライエツチング性の優
れたレジスト層を形成した後、該レジスト層の上にシリ
ル化したオルガノシルセスキオキサン系ポリマーを被覆
して二層構造のネガ型レジストを作り、該レジストに電
離放射線照射を行い、次に現像処理を施した後、ケトン
系溶剤或いは酢酸エステル系溶剤からなる第１リンス液
に浸漬し、引き続いてアルコール系溶剤或いはアセトニ
トリルからなる第２リンス液に浸漬して上層のレジスト
パターンの形成を行い、次に酸素プラズマ中でドライエ
ツチングを施して上層パターンを下層に転写してパター
ン形成することを特徴とする電子線レジストパターンの
形成方法を用いることにより解決することができる。The above problem can be solved by forming a resist layer with excellent dry etching resistance on the substrate to be processed, and then coating the resist layer with a silylated organosilsesquioxane polymer. After the resist is irradiated with ionizing radiation and then developed, it is immersed in a first rinse solution made of a ketone solvent or an acetate solvent, followed by a second rinse solution made of an alcohol solvent or acetonitrile. A method for forming an electron beam resist pattern, which comprises forming an upper resist pattern by immersing the resist in a rinsing liquid, and then performing dry etching in an oxygen plasma to transfer the upper resist pattern to the lower layer. This can be solved by using
本発明はシリル化したオルガノシルセスキオキサン系ポ
リマーが電離放射線に対して高い感度を示すこと及び酸
素プラズマによっては全くエツチングされないと云う特
性に着目し、これを二層レジストの上層として使用する
もので葛る。The present invention focuses on the characteristics of a silylated organosilsesquioxane polymer that exhibits high sensitivity to ionizing radiation and is not etched at all by oxygen plasma, and uses this as the upper layer of a two-layer resist. I'm bored.
またこの上層レジストは電離放射線を用いてパターンを
描画した後の現像工程において、現像液に浸漬してレジ
ストパターンを形成した後、ケトン系溶剤或いは酢酸エ
ステル系溶剤からなる第１リンス液に浸漬し、次にアル
コール系溶剤或いはアセトニトリルからなる第２リンス
液に浸漬する二段浸漬を行うことによって解像性に優れ
たレジストパターンが形成できることを見いだしたこと
によるものである。In addition, in the development step after drawing a pattern using ionizing radiation, this upper resist layer is immersed in a developer to form a resist pattern, and then immersed in a first rinse solution consisting of a ketone solvent or an acetate solvent. This is based on the discovery that a resist pattern with excellent resolution can be formed by performing a two-stage immersion process in which the resist pattern is then immersed in a second rinsing solution made of an alcohol solvent or acetonitrile.
実施例１：
シリコン（Ｓｉ）基板上にシソプレー社製のポジ型レジ
ストであるマイクロポジット１３５０をスピンコード法
で塗布し、窒素（Ｎ２）気流中で２００℃の温度で１時
間に互ってベーキングを行い、下層レジスト層を形成し
た。Example 1: Microposite 1350, a positive resist manufactured by Sisopray, was applied onto a silicon (Si) substrate by a spin code method, and baked at a temperature of 200° C. for 1 hour in a nitrogen (N2) stream. A lower resist layer was formed.
次にこのレジスト層の上に４メチｌｖ’ｌペンタノンに
溶解したシリル化ポリメチルシルセスキオキサン〔重量
平均分子１ｉ（ＭＨ） ＝４ ×１０’ ＋分散度Ｍｗ
／ Ｍｎ＝４．０但しＭｎは数平均分子量〕をスピンコ
ード法を用いて塗布し、窒素（Ｎ２）気流中で温度８０
℃で２０分間ベーキング処理して二層構造の電子線レジ
ストを形成した。Next, on this resist layer, silylated polymethylsilsesquioxane dissolved in 4 methyl lv'l pentanone [weight average molecular 1i (MH) = 4 × 10' + dispersity Mw
/ Mn = 4.0, where Mn is the number average molecular weight] was coated using a spin code method and heated at a temperature of 80°C in a nitrogen (N2) stream.
A baking treatment was performed at .degree. C. for 20 minutes to form a two-layer electron beam resist.
なおこの場合、下層レジストの膜厚は１．８μｍ。In this case, the thickness of the lower resist layer is 1.8 μm.
上層レジストの膜厚は０．２μｍであった。The thickness of the upper resist layer was 0.2 μm.
さて露光は加速電圧２０ ＫＶで電子線照射して行い、
４メチル２ペンタノン溶液に６０秒に亙って浸漬して現
像した後、第１リンス液としてアセトンを用いて３０秒
間浸漬し、次に第２リンス液としてイソプロピルアルコ
ールを用いて３０秒浸漬し、取り出した後Ｎ２気流中で
温度８０℃で１０分間アフターベータを行った。Now, exposure is performed by irradiating an electron beam at an accelerating voltage of 20 KV.
After developing by immersing in 4-methyl-2-pentanone solution for 60 seconds, immersing for 30 seconds in acetone as a first rinsing solution, then immersing in isopropyl alcohol as a second rinsing solution for 30 seconds, After taking it out, it was subjected to after beta for 10 minutes at a temperature of 80° C. in a N2 stream.
このようにして上層パターン形成した後、被処理基板を
平行平板形エツチング装置に装着し、ガス圧１５ｗｍ
Ｔｏｒｒ ＋電力密度０．２２ Ｗ／ｃｎｌの条件で
酸素プラズマによるエツチング処理を２０分に亙って行
い、上層のパターンを下層に転写した。After forming the upper layer pattern in this way, the substrate to be processed is mounted on a parallel plate type etching device and etched at a gas pressure of 15 wm.
Etching treatment using oxygen plasma was performed for 20 minutes under the conditions of Torr + power density of 0.22 W/cnl, and the pattern of the upper layer was transferred to the lower layer.
この場合、レジストの感度は１．６μｃ／ｃＩ１１であ
り、解像性は０．４μ糟のライン・アンド・スペースを
解像することができた。In this case, the sensitivity of the resist was 1.6 .mu.c/cI11, and the resolution was able to resolve lines and spaces of 0.4 .mu.c.
このように本発明を実施すると感度と解像度の両方とも
優れたレジストパターンを得ることができる。When the present invention is carried out in this manner, a resist pattern with excellent both sensitivity and resolution can be obtained.
比較例１ （第１リンス工程を省略した場合）：実施例
１と同様な方法で被処理基板上に二層構造のレジスト膜
を形成し、電子線照射を行って露光した後、４メチル２
ペンタノンに６０秒浸漬して現像処理を行った後、第２
リンス液であるイソプロピルアルコールに３０秒間浸漬
してリンス処理を行って上層パターンの形成を終わった
。Comparative Example 1 (when the first rinsing step is omitted): A two-layer resist film was formed on the substrate to be processed in the same manner as in Example 1, and after exposure with electron beam irradiation, 4 methyl 2
After 60 seconds of immersion in pentanone and development, the second
A rinsing treatment was performed by immersing it in isopropyl alcohol, which is a rinsing liquid, for 30 seconds, and the formation of the upper layer pattern was completed.
次に実施例１と同様に酸素プラズマのエツチング処理に
よって上層パターンを下層に転写した。Next, as in Example 1, the upper layer pattern was transferred to the lower layer by oxygen plasma etching treatment.
かかるプロセスをとる場合は感度は１．６μｃ／ｃ＋４
と変わらないが解像性は０．６ライン・アンド・スペー
スに低下し、またパターンの隅には球形のレジスト残滓
が多量に付着していた。If such a process is used, the sensitivity is 1.6μc/c+4
However, the resolution was lowered to 0.6 lines and spaces, and a large amount of spherical resist residue adhered to the corners of the pattern.
比較例２ （第２リンス工程を省略した場合）：実施例
１と同様な方法で被処理基板上に二層構造のレジスト膜
を形成し、電子線照射を行って露光した後、４メチル２
ペンタノンに６０秒浸漬して現像処理を行った後、第１
リンス液であるアセトンに３０秒間浸漬してリンス処理
を行って上層パターンの形成を終わった。Comparative Example 2 (when the second rinsing step is omitted): A two-layer resist film is formed on the substrate to be processed in the same manner as in Example 1, and after exposure with electron beam irradiation, 4 methyl 2
After immersing in pentanone for 60 seconds and developing, the first
A rinsing process was performed by immersing it in acetone, which is a rinsing liquid, for 30 seconds, and the formation of the upper layer pattern was completed.
次に実施例１と同様に酸素プラズマのエツチング処理に
よって上層パターンを下層に転写した。Next, as in Example 1, the upper layer pattern was transferred to the lower layer by oxygen plasma etching treatment.
かかるプロセスをとる場合は感度は１．６μｃ／ｃｎｌ
と変わらないが解像性は１．０ライン・アンド・スペー
スに低下した。If such a process is used, the sensitivity is 1.6 μc/cnl.
, but the resolution has decreased to 1.0 line and space.
以上のように貧溶剤による第１リンスと非溶剤による第
２リンスの二段階の浸漬処理を行うことによって解像性
を向上することができる。As described above, resolution can be improved by performing the two-step immersion treatment of the first rinse with a poor solvent and the second rinse with a non-solvent.
Claims (1)
ト層を形成した後、該レジスト層の上にシリル化したオ
ルガノシルセスキオキサン系ポリマーを被覆して二層構
造のネガ型レジストを作り、該レジストに電離放射線照
射を行い、次に現像処理を施した後、ケトン系溶剤或い
は酢酸エステル系溶剤からなる第１リンス液に浸漬し、
引き続いてアルコール系溶剤或いはアセトニトリルから
なる第２リンス液に浸漬して上層のレジストパターンの
形成を行い、次に酸素プラズマ中でドライエッチングを
施して上層パターンを下層に転写してパターン形成する
ことを特徴とする電子線レジストパターンの形成方法。After forming a resist layer with excellent dry etching resistance on the substrate to be processed, a silylated organosilsesquioxane polymer is coated on the resist layer to create a two-layer negative resist. After irradiating the resist with ionizing radiation and then developing it, it is immersed in a first rinsing solution consisting of a ketone solvent or an acetate solvent,
Subsequently, the resist pattern of the upper layer is formed by immersion in a second rinsing liquid made of alcohol-based solvent or acetonitrile, and then dry etching is performed in oxygen plasma to transfer the upper layer pattern to the lower layer to form a pattern. Characteristic electron beam resist pattern formation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25090484A JP2692059B2 (en) | 1984-11-28 | 1984-11-28 | Method for forming electron beam resist pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25090484A JP2692059B2 (en) | 1984-11-28 | 1984-11-28 | Method for forming electron beam resist pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61129645A true JPS61129645A (en) | 1986-06-17 |
| JP2692059B2 JP2692059B2 (en) | 1997-12-17 |
Family
ID=17214755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25090484A Expired - Lifetime JP2692059B2 (en) | 1984-11-28 | 1984-11-28 | Method for forming electron beam resist pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2692059B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6595670B2 (en) | 2000-04-11 | 2003-07-22 | Kabushiki Kaisha Tokai-Rika-Denki Seisakusho | Mirror assembly for vehicle |
| US8016466B2 (en) | 2006-10-31 | 2011-09-13 | Murakami Corporation | Door mirror |
-
1984
- 1984-11-28 JP JP25090484A patent/JP2692059B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6595670B2 (en) | 2000-04-11 | 2003-07-22 | Kabushiki Kaisha Tokai-Rika-Denki Seisakusho | Mirror assembly for vehicle |
| US8016466B2 (en) | 2006-10-31 | 2011-09-13 | Murakami Corporation | Door mirror |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2692059B2 (en) | 1997-12-17 |
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