JPS61124135A - Plasma treating device - Google Patents
Plasma treating deviceInfo
- Publication number
- JPS61124135A JPS61124135A JP59244426A JP24442684A JPS61124135A JP S61124135 A JPS61124135 A JP S61124135A JP 59244426 A JP59244426 A JP 59244426A JP 24442684 A JP24442684 A JP 24442684A JP S61124135 A JPS61124135 A JP S61124135A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- sample
- gas
- frequency power
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
- B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/14—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C37/00—Component parts, details, accessories or auxiliary operations, not covered by group B29C33/00 or B29C35/00
- B29C2037/90—Measuring, controlling or regulating
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、プラズマ処理装置に係り、特に減圧下でプラ
ズマにより複数個の試料を同時に処理するプラズマ処理
装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a plasma processing apparatus, and particularly to a plasma processing apparatus that simultaneously processes a plurality of samples with plasma under reduced pressure.
減圧下で処理ガスをプラズマ化し、該プラズマで複数個
の試料を同時に処理するプラズマ処理装置、いわゆるバ
ッチ式のプラズマ処理装置としは、例えば、特開昭５８
−１４９３９号公報に記載のような、処理室に対向電極
と複数個の試料が同時に設置される試料電極とが放電空
間を有し対向して内設され、試料電極に設置された複数
個の試料を減圧下でプラズマにより同時に処理するもの
が知られている。A so-called batch-type plasma processing apparatus, which converts processing gas into plasma under reduced pressure and simultaneously processes multiple samples with the plasma, is described in, for example, Japanese Patent Laid-Open No. 58
- As described in Publication No. 14939, a counter electrode and a sample electrode on which a plurality of samples are installed at the same time are installed in a processing chamber facing each other and have a discharge space, and a plurality of sample electrodes installed on the sample electrode It is known that a sample is simultaneously treated with plasma under reduced pressure.
このようなプラズマ処理装置では、対向電極と対向する
試料電極面、即ち、試料が設置される電極面の面積は、
試料電極番こ設置される複数個の試料の合計表面積の２
．５〜３倍程度と広く、この試料の合計表面積を試料電
極面の面積で除した面積比率は小さい。一方、処理ガス
のプラズマ化時には、試料が設置される試料電極面全体
が放電に使用される。これらのことより、複数個の試料
をプラズマにより良好に処理するために必要とされる所
定の放電密度（ガス圧等の条件が一定であれば、電極に
印加される電力を電極面の面積で除したものの関数で表
わされる。）を得るためには、面積比率が小さい分だけ
余分な電力を電極に印加しなければならず、電源容量が
余分に増大するといった問題がある。なお、この問題は
、試料のプラグマによる処理速度を向上させる場合、更
に増長される。In such a plasma processing apparatus, the area of the sample electrode surface facing the counter electrode, that is, the area of the electrode surface on which the sample is placed, is:
Sample electrode number 2 of the total surface area of multiple samples installed
．． It is about 5 to 3 times wider, and the area ratio obtained by dividing the total surface area of this sample by the area of the sample electrode surface is small. On the other hand, when the processing gas is turned into plasma, the entire surface of the sample electrode on which the sample is placed is used for electric discharge. From these facts, it has been determined that the predetermined discharge density (if conditions such as gas pressure are constant, the power applied to the electrode can be expressed as the area of the electrode surface) is required to properly process multiple samples with plasma. ), it is necessary to apply extra power to the electrodes in proportion to the small area ratio, which poses the problem of an extra increase in power supply capacity. Note that this problem is further aggravated when processing speed of samples by pragmas is increased.
本発明の目的は、面積比率を大きくすることで、電極へ
の余分な電力の印加を抑制して、電源容量の余分な増大
を防止できるプラズマ処理装置を提供することにある。An object of the present invention is to provide a plasma processing apparatus that can suppress the application of extra power to the electrodes by increasing the area ratio, thereby preventing an extra increase in power supply capacity.
本発明は、減圧下でプラズマにより同時に処理される試
料が１個毎設置される試料電極と、該試料電極が電気的
に独立して配設されるサポートとを減圧排気される処理
室に内設し、試料電極を電源にサポートを介して接続し
たことを特徴とするもので、面積比率を大きくすること
で、電極への余分な電力の印加を抑制しようとしたもの
である。In the present invention, sample electrodes on which samples to be simultaneously treated by plasma under reduced pressure are installed, and supports on which the sample electrodes are arranged electrically independently, are placed inside a processing chamber that is evacuated under reduced pressure. The sample electrode is connected to a power source via a support, and by increasing the area ratio, the application of excess power to the electrode is suppressed.
本発明の一実施例を第１図、第２図により説明する。 An embodiment of the present invention will be described with reference to FIGS. 1 and 2.
第１図、第２図で処理室１０には、試料、例えば、半導
体基板（以下、ウヱハと略）が１個毎設置される、この
場合、８個の試料電極旬と、試料電極頭が電気的に独立
して配設されるサポートＩとが内設され、試料電極頭は
、電源、例えば、高周波電源４０にサポート（資）を介
して接続されている。In FIGS. 1 and 2, each sample, such as a semiconductor substrate (hereinafter referred to as wafer), is installed in the processing chamber 10. In this case, eight sample electrodes and a sample electrode head are installed. A support I that is electrically independently disposed is provided inside, and the sample electrode head is connected to a power source, for example, a high frequency power source 40 via the support.
即ち、第１図、第２図で、処理室１０の、この場合、底
壁には、電極軸（資）が、その上端部を処理室１０内に
突出させ、電気的に絶縁されて設けられている。電極軸
（資）の下端には、高周波電源旬が接続されている。電
極軸間の上端部には、この場合、８本のサポート（９）
が角度４５°間隔で放射状方向に、かつ、略水平に設け
られている。サポート凹には、試料電極頭が、この場合
、試料設置面を略水平面としておのおの設けられている
。試料電極旬の試料設置面を除く面並びにサポート（資
）の外表面は、電気的に絶縁されアースシールドされて
いる。試料電極旬の試料設置面には、ウェハ（図示省略
）を収納可能な形状２寸法のガイドリング５１が設けら
れている。試料電極旬には、例えば、冷媒通路（図示省
略）が形成され、サポート（資）、電極軸（資）には、
冷媒通路と連通して冷媒供給路（図、 ３ 。That is, in FIGS. 1 and 2, an electrode shaft is provided on the bottom wall of the processing chamber 10, in this case, with its upper end projecting into the processing chamber 10 and being electrically insulated. It is being A high frequency power source is connected to the lower end of the electrode shaft. At the upper end between the electrode axes there are in this case 8 supports (9)
are provided radially at 45° intervals and approximately horizontally. In this case, each sample electrode head is provided in each of the support recesses, with the sample installation surface being a substantially horizontal plane. The surface of the sample electrode other than the sample installation surface and the outer surface of the support are electrically insulated and ground shielded. A guide ring 51 having a shape and two dimensions capable of accommodating a wafer (not shown) is provided on the sample installation surface of the sample electrode. For example, a refrigerant passage (not shown) is formed on the sample electrode, and a support (material) and electrode shaft (material) are formed with a refrigerant passage (not shown).
A refrigerant supply path (Figure 3) communicates with the refrigerant passage.
示省略）、冷媒排出路（図示省略）が、それぞれ形成さ
れている。冷媒供給路は、冷媒供給管（図示省略）を介
して冷媒供給源（図示省略）に連結されている。また、
処理室１０の、この場合、頂壁には、電極軸５２が、そ
の下端部を処理室１０内に突出させ、電気的に絶縁され
て設けられている。電極軸５２の下端には、対向型８［
＋が、試料電極頭と放電空間７０を有し略水平に設けら
れている。対向型［！６０の試料電極頭と対応する面に
は、カバー６１が設けられている。対向型極印には、試
料電極頭の試料設置面に向って開口するガス放出孔（図
示省略）が形成され、該ガス放出孔と連通してガス分散
室（図示省略）が形成されている。電極軸５２には、ガ
ス分散室と連通してガス供給路（図示省略）が形成され
、ガス供給路に連通してガス供給管（図示省略）が連結
されている。ガス供給管は、ガス源（図示省略）に連結
され、その途中には、ガス流量制御装置（図示省略）が
設けられている。(not shown) and a refrigerant discharge path (not shown) are respectively formed. The refrigerant supply path is connected to a refrigerant supply source (not shown) via a refrigerant supply pipe (not shown). Also,
An electrode shaft 52 is provided on the top wall of the processing chamber 10 in this case, with its lower end projecting into the processing chamber 10 and being electrically insulated. At the lower end of the electrode shaft 52, a facing type 8 [
+ has a sample electrode head and a discharge space 70, and is provided substantially horizontally. Facing type [! A cover 61 is provided on the surface corresponding to the sample electrode head 60. A gas discharge hole (not shown) that opens toward the sample installation surface of the sample electrode head is formed in the opposing pole mark, and a gas dispersion chamber (not shown) is formed in communication with the gas discharge hole. A gas supply path (not shown) is formed in the electrode shaft 52 so as to communicate with the gas distribution chamber, and a gas supply pipe (not shown) is connected to the gas supply path. The gas supply pipe is connected to a gas source (not shown), and a gas flow rate control device (not shown) is provided along the way.
電極軸５２は、アースされている。また、処理室１０に
は、例えば、ゲートバルブ（図示省略）を介し° ４
。The electrode shaft 52 is grounded. Further, the processing chamber 10 is connected to, for example, a gate valve (not shown) through a gate valve (not shown).
.
て副真空室（図示省略）が兵役されている。また、処理
室１０と副真空室との間でゲートバルブを介してウェハ
な搬送する公知の搬送手段（図示省略）が設けられてい
る。・また、処理室１０には、真空排気系（図示省略）
が連結されている。また、この場合、電極軸間は、駆動
手段（図示省略）により間欠回転可能となっている。A sub-vacuum chamber (not shown) is used for military purposes. Further, a known transport means (not shown) is provided for transporting a wafer between the processing chamber 10 and the sub-vacuum chamber via a gate valve.・In addition, the processing chamber 10 is equipped with a vacuum exhaust system (not shown).
are connected. Further, in this case, the electrode shafts can be rotated intermittently by a driving means (not shown).
第１図、第２図で、減圧排気された処理室１０内には、
ゲートバルブを介してウェハが、例えば、１個毎公知の
搬送手段により副真空室から搬入され、駆動手段により
電極軸（資）を間欠回転させることで、搬入されたウェ
ハは、試料電極頭の試料設置面に１個毎被処理面上向き
姿勢にて設置される。In FIGS. 1 and 2, inside the process chamber 10 which has been evacuated under reduced pressure,
For example, wafers are transported one by one from the sub-vacuum chamber via a gate valve by a known transport means, and by intermittently rotating the electrode shaft by a driving means, the wafers are transported to the top of the sample electrode head. Each sample is placed on the sample installation surface with the surface to be processed facing upward.
各試料電極頭へのウェハ設置完了後、ゲートバルブは閉
止される。その後、ガス源からガス流量制御装置で流量
を所定流量に制御されガス供給管を経て処理ガスが、電
極軸５２のガス供給路に供給される。ガス供給路に供給
された処理ガスはガス供給路を流通して対向型極印のガ
ス分散室に入り、ここで、均等に分散された後にガス放
出孔から試料電４２０に設置されたウェハの被処理面に
向って放出される。この放出された処理ガスの一部は作
動している真空排気系により排気される。この際、処理
室１０からの処理ガスの排出量は可変コンダクタンスバ
ルブ（図示省略）により調節され、これにより処理室１
０内は所定の処理圧力に調節されて維持される。この状
態で高周波電源４０よりサポート（資）を介して試料電
極頭に所定の高周波電力を印加すれば、対向型極印と試
料電極頭との間で放電が発生し、これにより、処理室１
０内の処理ガスはプラズマ化される。試料電極頭に設置
された各試料は、このプラズマにより同時に処理される
。このような処理が終了すれば、試料電極頭への高周波
電力の印加が停止され、また、ガス源からの処理室１０
への処理ガスの供給も停止される。その後、処理が終了
した各ウェハは、搬入時とは逆操作によって試料電極頭
から１個毎除去されて副真空室へ全て搬出される。この
ような操作を繰り返し実施することで、ウェハは、この
場合、８個毎プラズマによりバッチ処理される。After the wafer is placed on each sample electrode head, the gate valve is closed. Thereafter, the processing gas is supplied from the gas source to the gas supply path of the electrode shaft 52 through the gas supply pipe, with the flow rate being controlled to a predetermined flow rate by the gas flow rate control device. The processing gas supplied to the gas supply path flows through the gas supply path and enters the gas dispersion chamber with opposite pole markings, where it is evenly dispersed and then exposed to the wafer placed in the sample electrode 420 through the gas discharge hole. released towards the treated surface. A portion of this released processing gas is evacuated by an operating vacuum evacuation system. At this time, the amount of processing gas discharged from the processing chamber 10 is adjusted by a variable conductance valve (not shown).
The pressure within 0 is adjusted and maintained at a predetermined processing pressure. If a predetermined high-frequency power is applied to the sample electrode head from the high-frequency power source 40 through the support in this state, an electric discharge will occur between the facing pole mark and the sample electrode head, and this will cause the processing chamber to
The processing gas within 0 is turned into plasma. Each sample placed on the sample electrode head is simultaneously treated by this plasma. When such processing is completed, the application of high frequency power to the sample electrode head is stopped, and the processing chamber 10 from the gas source is stopped.
The supply of processing gas to is also stopped. Thereafter, each wafer that has been processed is removed one by one from the sample electrode head by a reverse operation to that at the time of carrying in, and all of the wafers are carried out to the sub-vacuum chamber. By repeatedly performing such operations, the wafers, in this case, are batch-processed by plasma every eight wafers.
本実施例では、次のような効果を得ることができる。In this embodiment, the following effects can be obtained.
（１）試料電極の面積が、ウェハ設置に最小限必要とさ
れる面積と小さいため、面積比率が大きくなＣ〕、電極
への余分な高周波電力の印加を抑制でき、高周波電源容
量の余分な増大を防ＩＦできる。(1) Since the area of the sample electrode is smaller than the minimum area required for installing the wafer, the area ratio is large. You can prevent IF from increasing.
（２）電極への余分な高周波電力の印加を抑制できるの
で、電極と高周波電源とを接続する配線や高周波絶縁ス
ペース等の附帯設備が過大となるのを防止できる。(2) Since the application of excess high-frequency power to the electrodes can be suppressed, it is possible to prevent ancillary equipment such as wiring connecting the electrodes and the high-frequency power source and high-frequency insulation space from becoming excessively large.
（３）処理ガスは、試料電極に設置されたウェハの被処
理面上を放射状に流れるため、プラズマ処理の均一性が
向上する。(3) Since the processing gas flows radially over the processing surface of the wafer placed on the sample electrode, the uniformity of plasma processing is improved.
第３図、第４図は１本発明の第２の実施例を示すもので
、上記一実施例を示す第１図、第２図と異なる点は、電
極軸間の上端部に形状が円板のサポート凹′が略水平に
設けられ、サポート（ト）′上に、この場合、角度４５
°間隔で８個の試料電極頭が電気的に独立して配設され
た点である。即ち、試・ ７ ・
料電％２０の試料設置面を除（面並びにサポート加′の
外表面は、電気絶縁材３１でカバーされ、更にその外面
はアースシールド脂でカバーされている。3 and 4 show a second embodiment of the present invention, and the difference from FIGS. 1 and 2 showing the above-mentioned embodiment is that the upper end between the electrode axes has a circular shape. A support recess' of the plate is provided approximately horizontally, in this case at an angle of 45
The point is that eight sample electrode heads are electrically independently arranged at intervals of .degree. That is, except for the sample installation surface of Test 7. Feeding %20, the surface and the outer surface of the support pad are covered with an electrical insulating material 31, and the outer surface is further covered with earth shield resin.
なお、第３図、第４図で、その他第１図、第２図と同一
装置１部品等は同一符号で示し説明を省略する。In FIGS. 3 and 4, other parts of the device that are the same as those in FIGS. 1 and 2 are designated by the same reference numerals, and their explanations will be omitted.
本実施例では、上記一実施例での効果と同様の効果を得
ることができる。In this embodiment, the same effects as those in the above embodiment can be obtained.
第５図、第６図は、本発明の第３の実施例を示すもので
、上記一実施例を示す第１図、第２図と異なる点は、電
極軸間の上端部に形状が円板のサポート（資）′が略水
平に設けられ、サポート加′上に、この場合、角度４５
°間隔で８個の試料電極頭が電気的に独立して配設され
た点である。即ち、試料電極頭試料設置面を除く面並び
にサポートＩ′の外表面は電気絶縁材３１．３３でカバ
ーされている。FIGS. 5 and 6 show a third embodiment of the present invention. The difference from FIGS. 1 and 2, which show the above embodiment, is that the upper end between the electrode axes has a circular shape. The support for the plate is provided approximately horizontally, in this case at an angle of 45
The point is that eight sample electrode heads are electrically independently arranged at intervals of .degree. That is, the surface of the sample electrode head other than the sample installation surface and the outer surface of the support I' are covered with electrical insulating materials 31 and 33.
この場合、対向電極６０と対応してサポート加′にカバ
ーされた電気絶縁材おは、対向電極ωとサポート（資）
′との間での放電の発生を阻止し得る絶縁性能、例えば
、厚さを有している。また、電気絶縁材３１・ ８ ・
の外面は更にアースシールド羽でカバーされている。な
お、第５図、第６図で、その他第１図、第２図と同−装
置等は同一符号で示し説明を省略するＯ
本実施例では、上記一実施例での効果と同様の効果を得
ることができる。In this case, the electrical insulating material covered by the support material corresponds to the counter electrode 60, and the support material
' has an insulating property, such as a thickness, that can prevent the occurrence of discharge between the two. Further, the outer surface of the electrical insulating material 31.8. is further covered with earth shield wings. Note that in FIGS. 5 and 6, other devices that are the same as those in FIGS. 1 and 2 are denoted by the same reference numerals and their explanations will be omitted. can be obtained.
以上説明した本発明の実施例では、電源として高周波電
源を用いているが、この他に直流電源を用いても良い。In the embodiments of the present invention described above, a high frequency power source is used as the power source, but a DC power source may be used in addition to this.
また、対向電極を試料電極と同様番こ独立に形成しても
良い。Further, the counter electrode may be formed independently in the same manner as the sample electrode.
本発明は、以上説明したように、面積比率を大きくでき
るので、電極への余分な電力の印加を抑制でき電源容量
の余分な増大を防止できるという効果がある。As explained above, the present invention can increase the area ratio, so it has the effect of suppressing the application of extra power to the electrodes and preventing unnecessary increases in power supply capacity.
第１図は、本発明によるプラズマ処理装置の一実施例を
示す処理室部の縦断面図、第２図は、第１図のＡ−Ａ視
断面図、第３図は、本発明によるプラズマ処理装置の第
２の実施例を示す処理室部の縦断面図、第４図は、第３
図のＢ−Ｂ視断面図、第５図は、本発明によるプラズマ
処理装置の第３の実施例を示す処理室部の縦断面図、第
６図は、第５図のＣ−Ｃ視断面図である。
１０・・・・・・処理室、加・・・・・・試料電極、（
９）、３０′・・・・・・す・ １１・FIG. 1 is a longitudinal cross-sectional view of a processing chamber showing an embodiment of a plasma processing apparatus according to the present invention, FIG. 2 is a cross-sectional view taken along line A-A in FIG. 1, and FIG. FIG. 4 is a longitudinal cross-sectional view of the processing chamber section showing the second embodiment of the processing apparatus.
5 is a vertical sectional view of a processing chamber showing a third embodiment of the plasma processing apparatus according to the present invention, and FIG. 6 is a sectional view taken along CC in FIG. 5. It is a diagram. 10...processing chamber, processing...sample electrode, (
9), 30'... 11.
Claims (1)
、該プラズマで複数個の試料を同時に処理する装置にお
いて、前記試料が１個毎設置される試料電極と、該試料
電極が電気的に独立して配設される、サポートとを前記
処理室に内設し、試料電極を電源にサポートを介して接
続したことを特徴とするプラズマ処理装置。1. In an apparatus that converts processing gas into plasma in a processing chamber that is evacuated under reduced pressure, and simultaneously processes multiple samples with the plasma, the sample electrode on which each sample is installed is electrically independent of the sample electrode. A plasma processing apparatus characterized in that a support is disposed in the processing chamber, and a sample electrode is connected to a power source via the support.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59244426A JPH0622216B2 (en) | 1984-11-21 | 1984-11-21 | Plasma processing device |
| KR1019850003951A KR890002801B1 (en) | 1984-06-06 | 1985-06-05 | Plasma treating method and apparatus therefor |
| US06/741,526 US4664767A (en) | 1984-06-06 | 1985-06-05 | Plasma treating method and apparatus therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59244426A JPH0622216B2 (en) | 1984-11-21 | 1984-11-21 | Plasma processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61124135A true JPS61124135A (en) | 1986-06-11 |
| JPH0622216B2 JPH0622216B2 (en) | 1994-03-23 |
Family
ID=17118478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59244426A Expired - Lifetime JPH0622216B2 (en) | 1984-06-06 | 1984-11-21 | Plasma processing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0622216B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0833374A2 (en) * | 1996-09-26 | 1998-04-01 | Kokusai Electric Co., Ltd. | Substrate processing apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59142328A (en) * | 1983-02-01 | 1984-08-15 | Yokoi Kikai Kosakusho:Kk | Air-fuel ratio controlling device in combustion apparatus |
-
1984
- 1984-11-21 JP JP59244426A patent/JPH0622216B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59142328A (en) * | 1983-02-01 | 1984-08-15 | Yokoi Kikai Kosakusho:Kk | Air-fuel ratio controlling device in combustion apparatus |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0833374A2 (en) * | 1996-09-26 | 1998-04-01 | Kokusai Electric Co., Ltd. | Substrate processing apparatus |
| EP0833374A3 (en) * | 1996-09-26 | 1998-05-13 | Kokusai Electric Co., Ltd. | Substrate processing apparatus |
| US6053980A (en) * | 1996-09-26 | 2000-04-25 | Kokusai Electric Co., Ltd. | Substrate processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0622216B2 (en) | 1994-03-23 |
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