JPS6112039A - Ceramic substrate - Google Patents
Ceramic substrateInfo
- Publication number
- JPS6112039A JPS6112039A JP13367384A JP13367384A JPS6112039A JP S6112039 A JPS6112039 A JP S6112039A JP 13367384 A JP13367384 A JP 13367384A JP 13367384 A JP13367384 A JP 13367384A JP S6112039 A JPS6112039 A JP S6112039A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- ceramic
- ceramic plate
- thermal conductivity
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
′ 本発明は半導体、ＩＣまたはチップセラミック回路
部品を実装したり、発熱をともなう厚膜または薄膜の回
路を印刷するためのセラミック基板に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a ceramic substrate for mounting semiconductor, IC or chip ceramic circuit components, or for printing thick film or thin film circuits that generate heat.
従来から使用されている半導体、工０またはチップセラ
ミック回路部品を実装したり、発熱をともなう厚膜また
は薄膜の回路を印刷するための基板を分類すると、３種
類にわけられる。第１はプラスチックによるプリント基
板、第２はアルミナを主成分とするセラミック基板（以
下、アルミナ基板という）、第３は金属をコアーとし、
絶縁物を塗布したホール一基板である。Conventionally used substrates for mounting semiconductor, industrial or chip ceramic circuit components, or for printing thick film or thin film circuits that generate heat can be classified into three types. The first is a printed circuit board made of plastic, the second is a ceramic substrate whose main component is alumina (hereinafter referred to as an alumina substrate), and the third is a metal core.
It is a one-hole board coated with an insulator.
従来、これらの分野にはプリント基板が多く使用されて
きているが、製品の小型軽量化の要請にともなって、近
年、セラミック基板も多く使用されるようになってきて
いる。さらに最近では、半導体または工０のパワーが上
昇し、発熱量も多くなり、セラミック基板ではものたり
ず、熱伝導性の良好な金属をコアーとするホーロー基板
を使用する動きもある。また最近の別の要請として、厚
膜または薄膜の抵抗体を騎時の加熱体として使用する感
熱ヘッドとしての動きもあり、そのばあいには加熱後す
ぐに冷却されなければならないため、基板材料としてホ
ー田−基板も候捕に上っている〇このように最近の基板
の動きとしては、熱伝導性の良好な基板を必要とする方
向がでてきているが、アルミナ基板では不足であり、熱
伝導性の良好なホール一基板の検討がなされている。。Conventionally, printed circuit boards have been widely used in these fields, but with the demand for smaller and lighter products, ceramic substrates have also come into widespread use in recent years. Furthermore, recently, as the power of semiconductors and semiconductors has increased, the amount of heat generated has also increased, and ceramic substrates are no longer sufficient, and there is a movement to use hollow substrates whose cores are made of metal with good thermal conductivity. Another recent demand is the use of thick-film or thin-film resistors as heating elements for heat-sensitive heads. Hoda - Substrates are also on the rise. As seen above, recent trends in substrates have led to the need for substrates with good thermal conductivity, but alumina substrates are insufficient. , a single-hole substrate with good thermal conductivity has been studied. .
しかしながら、ホーマー基板のコアーは鉄が主体である
ため、下記のごとき問題点を有している０（１）鉄の熱
膨脹係数が大きいため、シリコンの単結晶から製造され
る半導体や工０の熱膨脹係数とのマツチングがわるい。However, since the core of the Homer substrate is mainly made of iron, it has the following problems: (1) Since the coefficient of thermal expansion of iron is large, the thermal expansion of semiconductors manufactured from silicon single crystals and Poor matching with coefficients.
（２）鉄の熱伝導度は０．４Ｗ１０ｎ ｑＯ程度であり
、鉄に絶縁物を塗布するとその熱伝導度はさらにさがり
、アルミナ基板と比較したばあい、特別よいとはいいが
たい。(2) The thermal conductivity of iron is about 0.4W10nqO, and when an insulating material is applied to iron, the thermal conductivity decreases further, and when compared with an alumina substrate, it cannot be said to be particularly good.
そのためコアーにムｌやＯｕを使用することも考えられ
るが、これらは鉄よりさらに熱膨脹係数が高く、（１）
の点で不満足である。Therefore, it is possible to use mulch or Ou for the core, but these have higher coefficients of thermal expansion than iron, and (1)
I am unsatisfied with this point.
最近（１）および（２）を満足するＳｉＯセラミックか
らなる基板が報告され、ヒタセラムなる商品名で市販さ
れている。しかしながらこの基板は電圧電流特性が非直
線的であり、電圧が高いと抵抗が低下する（たとえば３
０°０で１００Ｖ／ｍｍ以上で急に低抵抗となる）上に
、温度が室温より高くなると抵抗の低下が一層大きなも
のとなる。ヒタセラム以外のＳｉＣ基板は一般に電気抵
抗が低く、低電圧でさえ使用することはできない。Recently, a substrate made of SiO ceramic that satisfies (1) and (2) has been reported and is commercially available under the trade name Hitaceram. However, this substrate has nonlinear voltage-current characteristics, and the resistance decreases when the voltage is high (for example, 3
(The resistance suddenly becomes low at 100 V/mm or more at 0°0.) Furthermore, when the temperature becomes higher than room temperature, the decrease in resistance becomes even greater. SiC substrates other than Hitaceram generally have low electrical resistance and cannot be used even at low voltages.
（発明の概要〕
本発明は前記のごとき実情に鑑み、上記ＳｉＯ基板の欠
点を除去するためになされたものであり、熱膨脹係数が
半導体シリコンに近く、熱伝導度が高く、かつ、ことに
平面方向に絶縁性の高い七うミツ“り基板を提供するも
のである。(Summary of the Invention) In view of the above-mentioned circumstances, the present invention has been made in order to eliminate the drawbacks of the SiO substrate described above. The present invention provides a seven-layer substrate with high insulating properties in both directions.
すなわち本発明は、熱伝導度が１．６Ｗ１０ｎ ０１）
以上を有するＳｉＯを主成分とするセラミック板の表面
に１最終膜厚が５μｍ以上、好ましくは２０μｍ以上に
なるように絶縁膜を形成したことを特徴とするセラミッ
ク基板に関する。That is, the present invention has a thermal conductivity of 1.6W10n 01)
The present invention relates to a ceramic substrate characterized in that an insulating film is formed on the surface of a ceramic plate having SiO as a main component so as to have a final film thickness of 5 μm or more, preferably 20 μm or more.
本発明において′は、熱伝導度が１．６Ｖａｍ ００以
上を有するＳｉＣを主成分とするセラミック板（以下、
１９１０七２ミツク板という）が使用される０ＳｉＣを
主成分とするとは、セラミック板中にしめるＳｉＯ含有
量が９０〜９９％（重量％、以下同様）、好ましくは９
５〜９９％であり、Ｂｉσ以外の成分としてはＳｌ、０
である。In the present invention, ' is a ceramic plate (hereinafter referred to as
191072 Miku plate) is used as a main component of 0SiC, which means that the SiO content in the ceramic plate is 90 to 99% (wt%, the same shall apply hereinafter), preferably 9
5 to 99%, and components other than Biσ include Sl, 0
It is.
このようなセラミック板は一般に熱伝導度が高く、約４
．５Ｘ１０”’１０ａ程度の熱膨脹係数を有し、その具
体例としては、ＳｉＣ粉末に８１粉末と０粉末とを混合
して反応させながら焼結してえられる反応焼結ＳｔＯセ
ラミック板があげられ、このようにしてえられたセラミ
ック板は、通常１．６〜２．１Ｖｏｍ’にと高い熱伝導
度を有する。Such ceramic plates generally have high thermal conductivity, about 4
．． It has a coefficient of thermal expansion of about 5 x 10'''10a, and a specific example thereof is a reaction-sintered StO ceramic plate obtained by mixing SiC powder with 81 powder and 0 powder and sintering the mixture while reacting it. The ceramic plate thus obtained usually has a high thermal conductivity of 1.6 to 2.1 Vom'.
本発明においては、ＳｉＯセラミック板表面に最終膜厚
が５μｍ以上、好ましくは２０μｍ以上になるように絶
縁膜が形成される。In the present invention, an insulating film is formed on the surface of the SiO ceramic plate so that the final film thickness is 5 μm or more, preferably 20 μm or more.
該絶縁膜を形成するのに使用可能な材料としては、ガラ
ス、結晶さガラスからなるもの、薄膜状セラミックス、
ａｉ３Ｎ４などがあげられ、いずれを用いるかは必要と
される基板の熱伝導度および絶縁性などにより適宜選択
すればよい。たとえば基板の熱伝導度が１．４Ｗ１０ｎ
ｏｏ以上必要になると、８１３Ｎ４により絶縁膜を２
０μｍ以下の厚さで形成する必要がある。ま・たアルミ
ニウムおよびシリコンのアル−キシドを醸化したときに
ムライトの組成になるように混合し、ｓｉｏセラミック
板に塗布して加熱し、ムライト質の絶縁膜を５μｍの厚
さに形成させてもよいｄ
形成きれる絶縁膜が、Ｓ１０を主成分とするセラミック
板と熱膨脹係数の差が０〜０．８Ｘ１０ １００程度の
範囲にあるガラスから形成された゛ものであるばあいに
は、絶縁膜にひびわれなどを起さない効果があり、０〜
ｓ、 ｏｘ ｔｏ−’１０ａ程癒の範囲にある結晶化ガ
ラスまたはガラスと結晶の微粉末から形成されたもので
あるばあいには、絶縁膜にひびわれがなく、またガラス
のみのばあいより高熱伝導度と。Materials that can be used to form the insulating film include glass, crystalline glass, thin film ceramics,
Examples include ai3N4, and which one to use may be appropriately selected depending on the required thermal conductivity and insulation properties of the substrate. For example, the thermal conductivity of the board is 1.4W10n
If more than oo is required, two insulating films are added using 813N4.
It is necessary to form the layer with a thickness of 0 μm or less. Aluminum and silicon alkoxides were mixed to have a mullite composition when brewed, and then applied to a SIO ceramic plate and heated to form a mullite insulating film with a thickness of 5 μm. If the insulating film that can be formed is made of glass whose coefficient of thermal expansion differs from that of a ceramic plate whose main component is S10 in the range of about 0 to 0.8 It has the effect of not causing cracks, etc., and has a rating of 0~
If it is made of crystallized glass or a fine powder of glass and crystals, which has a heating range of s, ox to -'10a, there will be no cracking in the insulating film, and it will not tolerate higher heat than if it was made only of glass. with conductivity.
なる〇
つぎに本発明のセラミック基板を図面にもとづき説明す
る＠
第１図は本発明のセラミック基板を説明するための説明
図であり、Ｓ１〇セラミツク板（１）上に絶縁膜・（２
）が形成されている。発熱をともなう牛導体、工０など
の素子部品および回路などからなる発熱部分（３）は、
絶縁膜（２）の上に搭載されており、発熱部分（３）か
ら発生した熱の多くは絶縁膜（２）およびＳｉＯセラミ
ック板（１）を通り、大気中またはヒートシンク（４）
に放熱される。絶縁膜（２）の厚さをＬｌ、熱伝導度を
に１とし、８１Ｃセラミツク板（１）の厚さを、Ｌ２、
熱伝導度をｘ２とし、ＳｉＣセラミツク板（１）および
絶縁膜（２）からなるセラミック基板の熱伝導度をＸと
すると、
であられされる。〇Next, the ceramic substrate of the present invention will be explained based on the drawings @ Fig. 1 is an explanatory diagram for explaining the ceramic substrate of the present invention.
) is formed. The heat-generating part (3) consists of the conductor, element parts such as wires, circuits, etc. that generate heat.
It is mounted on the insulating film (2), and most of the heat generated from the heat generating part (3) passes through the insulating film (2) and the SiO ceramic plate (1) and is released into the atmosphere or the heat sink (4).
Heat is radiated to The thickness of the insulating film (2) is Ll, the thermal conductivity is 1, and the thickness of the 81C ceramic plate (1) is L2,
If the thermal conductivity is x2 and the thermal conductivity of the ceramic substrate consisting of the SiC ceramic plate (1) and the insulating film (2) is X, then it is expressed as follows.
ＳｉＯセラミック板（１）の厚さ′Ｌ２を１．０ｍｍ
ｓ絶縁膜の厚さＬｌを２０μｍまたは５μｍとしたとき
のセラミック基板の熱伝導度を、絶縁膜の熱伝導度をパ
ラメーターとしてＳｉＣセラミツク板の熱伝導度に対し
て計算し、プ四ッ卜すると第２図に示すようになる。The thickness 'L2 of the SiO ceramic plate (1) is 1.0 mm.
s The thermal conductivity of the ceramic substrate when the thickness Ll of the insulating film is 20 μm or 5 μm is calculated with respect to the thermal conductivity of the SiC ceramic board using the thermal conductivity of the insulating film as a parameter, and then The result is as shown in FIG.
既述のように、反応焼結ＥＩｉＯセラミック板は１．６
〜２． Ｉ Ｗｌｏｎ ｏａ と高い熱伝導度を有す
る。本発明では熱伝導度１．６Ｗ１０！ＩＩ ｏａ以上
の１３１０セラミツク板が使用される。As already mentioned, the reaction sintered EIiO ceramic plate is 1.6
~2. It has a high thermal conductivity of I Wlon oa . In the present invention, the thermal conductivity is 1.6W10! 1310 ceramic board of II oa or higher is used.
第２図から、１． ＧＷ／ａｍ ｏａ以上の熱伝導度の
セラミック基板を作製するには％ ２．０Ｗ１０ｎｏＯ
のＳｉＯセラミック板を用いて、もし熱伝導度が［Ｌ
０１ Ｗｌｏｎ ’０程度のガラスをコーティングする
とすれば膜厚を約５μｍ以下にしなければならない。こ
こで１．ＯＷｌｏｍｑｏを熱伝導度の目標としたのは、
ＡｊＮを用いたセラミック基板は近い将来この程度の材
料になることが予想されるからである。もし、ＳｉＯセ
ラミック板の熱伝導度が１．６であり、絶縁性の関係で
２０μｍの絶縁膜を必要とするばあいには、Ｏ，０ＳＷ
１０ｎ ｑＯ程度の熱伝導性膜を付着させなげればなら
ない。一方、絶縁膜の絶縁破壊電圧の安全域は約１０Ｋ
Ｖ／ｍｍ以下であり、この点から、膜厚２０μｍでは約
２００ｖ、１０μｍでは約１００７，５μｍでは約ｓｏ
ｖということになる。これらの点から、膜厚どしては少
なくとも５μｍ以上、好ましくは２０μｍ以上あること
が望°ましい。From Figure 2, 1. To produce a ceramic substrate with a thermal conductivity of GW/am oa or higher, %2.0W10noO
If the thermal conductivity is [L
If glass of approximately 01 Wlon '0 is to be coated, the film thickness must be approximately 5 μm or less. Here 1. The thermal conductivity target for OWlomqo was
This is because it is expected that ceramic substrates using AjN will be of this quality in the near future. If the thermal conductivity of the SiO ceramic plate is 1.6 and an insulating film of 20 μm is required for insulation, O,0SW
A thermally conductive film on the order of 10 nqO must be deposited. On the other hand, the safety range of the dielectric breakdown voltage of the insulating film is approximately 10K.
V/mm or less, and from this point, it is about 200V for a film thickness of 20μm, about 100V for a film thickness of 10μm, and about soV for a film thickness of 5μm.
This means v. From these points of view, it is desirable that the film thickness be at least 5 μm or more, preferably 20 μm or more.
第３図は熱伝導度が１．９Ｗ１０ｎ ｏａ（７） Ｓｉ
Ｃ ＊ ’） Ｚ ７り板に種々の熱伝導性絶縁膜を形
成したばあいのセラミック基板の熱伝導度を示す。１．
ＯＷ／ａｍ ｑｏ以上の熱伝導度のセラミック基板が必
要なばあい、絶縁膜の熱伝導度がＱ、 ０１Ｗ／ａｍ
ｃｖＪならば５μｍ以下でなければなら゛ないが、１．
□Ｗ／ａｍ ｏａならば５５μｍ程の膜厚の絶縁膜が
可能である。絶縁膜として使用可能な材料は、ガラス、
結晶化ガラス、薄膜状セラミックスなどがあるが、絶縁
膜の熱伝導度が０．１Ｖｏｍｏｏ以上必要となると５１
３Ｍ４膜を形成しなければならない。Figure 3 shows thermal conductivity of 1.9W10n oa(7) Si
C * ') Z 7 It shows the thermal conductivity of the ceramic substrate when various thermally conductive insulating films are formed on the board. 1.
If a ceramic substrate with a thermal conductivity higher than OW/am qo is required, the thermal conductivity of the insulating film is Q, 01 W/am.
For cvJ, it must be 5 μm or less, but 1.
□W/am oa allows an insulating film with a thickness of about 55 μm. Materials that can be used as an insulating film include glass,
There are crystallized glass, thin film ceramics, etc., but if the thermal conductivity of the insulating film is required to be 0.1Vomoo or more, 51
A 3M4 film must be formed.
絶縁膜の材料に対するもう１つの主たる制限は、熱膨脹
係数である。Another major limitation on insulating film materials is the coefficient of thermal expansion.
第１図において、絶縁膜（２）の熱膨脹係数をα１．Ｓ
ｉＣセラミツク板（１）の熱膨脹係数をα２、絶縁膜（
２）のヤング率をｍｌ、絶縁膜がガラスのばあいには歪
の除去できる温度を、また微細な結晶化ガラスのみから
なるばあいには処理温度をＴ１、室温をＴｒとすると、
絶縁膜にがかる力σは
σ＝ ＩＩ！（ａｌ−ａｇ）（Ｔ１−’Ｉ’ｒ）
値）であられされる。σが正のばあいには、絶縁膜
に引張り応力、負のばあいには、絶縁膜に圧縮応力がか
かることになる。Ｓ１０セラミツク板に対する応力のか
かり方は、絶縁膜に対するものと逆になる。σが材料の
有する破壊強度以上になると破壊するので、熱膨脹係数
がａｌｚα２であるような絶縁膜を選択することが好ま
しい。In FIG. 1, the coefficient of thermal expansion of the insulating film (2) is α1. S
The coefficient of thermal expansion of the iC ceramic plate (1) is α2, and the insulating film (
If the Young's modulus of 2) is ml, the temperature at which strain can be removed if the insulating film is made of glass, and the processing temperature is T1 and room temperature is Tr if it is made of only fine crystallized glass, then
The force σ applied to the insulating film is σ = II! (al-ag) (T1-'I'r)
value). When σ is positive, tensile stress is applied to the insulating film, and when σ is negative, compressive stress is applied to the insulating film. The stress applied to the S10 ceramic plate is opposite to that applied to the insulating film. Since the insulating film will break if σ exceeds the breaking strength of the material, it is preferable to select an insulating film whose coefficient of thermal expansion is alzα2.
つぎに、絶縁膜に比べてＳｉＯセラミック板の強度は大
きいので、絶縁膜についての を具体例にそくしたばあ
いの計算を試みる。Next, since the strength of the SiO ceramic plate is greater than that of the insulating film, we will try to calculate the following for the insulating film using a specific example.
第４図は、ＴＩ −Ｔｒ＝８００ ｑＯとしたときの絶
縁膜破壊強度と熱膨脹係数の差との関係を示すグラフで
ある。第４図から、ガラスを絶縁膜としてコーティング
したばあいには、その強度は５に４／ｍｍ”ぐらいであ
り、ヤング率（ＩＩりは６０００〜８０００に４／４Ｉ
ｍ”ぐらいであるから、セラミック基板との熱膨脹係数
の差は０．８Ｘ１０”’〜０．６×１Ｏ−６１０ａ以下
、すなわち反応焼結ＳｉＯセラミック板の熱膨脹係数を
４．３×１Ｏ−６１０ｏとすると、絶縁膜の熱膨脹係数
は５．１×１０−６〜４．９Ｘ１０ ／’０以下であ
ることが必要である０すなわち、ガラスを絶縁膜とする
ばあいには、ヤング率が６０００ｋｐ／ｍｍ”のもので
熱膨脹係数の差が０〜０．８Ｘ１０−’１０ｏ（７）も
の、’ｒ ン／ 率カ８０００ｋｐ／ｍｍｊ！のもので
０〜０．６×１０７ｑＯのものが使用されなければなら
ない。また結晶化ガラスまたは結晶とガラスとか１らな
４材料ではヤング率が１２０００〜１５０００に１１／
ｍｍ” 程度となり、強度は２０〜１ｋｇ／ｍｍ２とな
るから、熱膨脹係数の差としては１．６Ｘ１０ 〜３．
０Ｘ１０／ｑＯ必要であり、熱膨―係数としては５．９
×１０−６〜７．３Ｘ１０１０ａ程度のものが用いられ
なければならない。FIG. 4 is a graph showing the relationship between the dielectric breakdown strength and the difference in thermal expansion coefficient when TI-Tr=800 qO. From Figure 4, when glass is coated as an insulating film, its strength is about 5 to 4/mm'', and Young's modulus (II is 6000 to 8000 to 4/4I).
m", the difference in thermal expansion coefficient with the ceramic substrate is less than 0.8x10"'~0.6x1O-610a, that is, the thermal expansion coefficient of the reaction sintered SiO ceramic plate is 4.3x1O-610a. Then, the thermal expansion coefficient of the insulating film must be 5.1 x 10-6 to 4.9 x 10 /'0 or less. In other words, when glass is used as the insulating film, the Young's modulus is 6000 kp/mm. Those with a thermal expansion coefficient difference of 0 to 0.8 x 10-'10o(7) and those with a thermal expansion coefficient of 8000 kp/mmj! must be used. .Furthermore, the Young's modulus of four materials with unity such as crystallized glass or crystal and glass is 11/12,000 to 15,000.
mm" and the strength is 20 to 1 kg/mm2, so the difference in thermal expansion coefficient is 1.6X10 to 3.
0x10/qO is required, and the thermal expansion coefficient is 5.9
A material of the order of x10-6 to 7.3x1010a must be used.
つぎに本発明のセラミック基板を実施例にもとづき説明
する〇
実施例１
白金ルツボ中で５ｉｎ２５４％、Ｂ２Ｏ３３％、ＡＪ２
０３２１％、Ｏ＆０１４％、ＢａＯ３％の組成物を１４
００００で溶融し、鉄板上に流し出したのち、少し冷却
したところでこのガラスを水中に投下し、こまかい塊と
した０このガラスのこまかい塊をアルミナ製ボールミル
に入れ、水中で５０時間粉砕したのち、湿式のまま４０
０メツシユふるいでふるったのち、ふるい通過分を金属
性バットに゛移し、１００°０で乾燥してガラス粉末を
えた。Next, the ceramic substrate of the present invention will be explained based on examples.〇Example 1 5in 254%, B2O33%, AJ2
0321%, O&014%, BaO3% composition 14
After melting at 0000 and pouring it out onto a steel plate, after cooling it a little, this glass was dropped into water and made into fine lumps.0 The fine lumps of this glass were placed in an alumina ball mill and crushed in water for 50 hours. 40 as wet
After sieving with a 0 mesh sieve, the portion that passed through the sieve was transferred to a metal vat and dried at 100°0 to obtain a glass powder.
えられたガラス粉末１００ｇにエチルセル四−ス３ｇ、
ポリビニルブチラールＤ−７ｇ、ジブチル７タレート５
ｙ、分散剤（デモール８Ｔ（花王アトラス■製））１ｇ
、ブチルカルピトール１５ｐｑテルピネオール１５ｇを
添加し、再びボールミルで２４時間混合したのち、該混
合物を反応焼結によって作製した厚さ１ｍｍのＳｉＯセ
ラミック板（商品名：レツ７エル）に、印刷法によって
スクリーンメツシュを通して板の全面に印刷した。その
のち８０°ａでよく乾燥し、ついで５０曳＾ｒの速度で
１４００句まで加熱し、３時間保持したのち、５０°Ｏ
／ｈｒの速度で冷却し、厚さ約５μｍのガラス膜を表面
に形成したＳｉＯセラミック板をえた。3 g of ethyl cellulose to 100 g of the obtained glass powder,
Polyvinyl butyral D-7g, dibutyl 7 tallate 5
y, dispersant (Demol 8T (manufactured by Kao Atlas ■)) 1 g
After adding 15 pq of butyl calpitol and 15 g of terpineol and mixing again in a ball mill for 24 hours, the mixture was screened by a printing method onto a 1 mm thick SiO ceramic plate (trade name: Retsu 7L) prepared by reaction sintering. Printed on the entire surface of the board through mesh. After that, it was thoroughly dried at 80°A, then heated at a speed of 50°C to 1400°C, held for 3 hours, and heated to 50°C.
/hr to obtain a SiO ceramic plate on which a glass film with a thickness of about 5 μm was formed.
実施例２
Ｓｉｎ２５２．５％、ム１３！０３２６．５％、ＴｌＯ
２１１％、Ｍｇ０１０％からなる混合物を実施例１と同
様にしてガラス粉末をえた。Example 2 Sin252.5%, Mu13!0326.5%, TlO
A glass powder was obtained using a mixture consisting of 211% Mg and 10% Mg in the same manner as in Example 1.
このガラス粉末をエチルアルコールに分散させ、レツフ
エルの上に沈殿させたのち、５０°’Ｏ／ｈｒの速度で
１６００’０まで加熱して溶解したガラスの膜とし、一
旦冷却してガラス中に結晶核を形成したのち再度１３０
０ ｑＯで１０時間加熱して、ガラス中に結晶を成長さ
せ５０°’ｏ／ｈｒの速度で冷却し、厚さ！ｌＪ５μｍ
のコージェライトを主成分とする結晶化ガラスの膜をコ
ーティングすることができた。This glass powder is dispersed in ethyl alcohol and precipitated on a retuffel, heated at a rate of 50°'O/hr to 1600'0 to form a molten glass film, and once cooled to form crystals in the glass. 130 again after forming the nucleus
Heating at 0 qO for 10 hours to grow crystals in the glass, cooling at a rate of 50°'o/hr, thickness! lJ5μm
We were able to coat a film of crystallized glass whose main component is cordierite.
実施例３
アルミニウムおよびシリコンのアルコキシドを酸化した
ときに、５１１２．０３・２５１０ｇ （ムライト）の
組成となるように混合し、この液をＳｉＯセラミック板
に塗布して５０°’ａ／ｈｒの速度でｓｏｏ ６ｏまで
加熱し、つぎに１００ ｃｋｏＡｒの速度テ１４００°
’ａｔで加ｉｔ、、また塗布して加熱することを３回行
なって、約５μｍの膜厚の絶縁物を付着させた。Example 3 When aluminum and silicon alkoxides are oxidized, they are mixed to have a composition of 5112.03.2510 g (mullite), and this liquid is applied to a SiO ceramic plate and heated at a rate of 50°'a/hr. Heat to soo 6o, then heat to 1400° at a speed of 100 ckoAr.
Adding at 'at, coating and heating were performed three times to deposit an insulator with a thickness of about 5 μm.
実施例４
ＳｉＯｊ４およびＮＨ３の気体を石英ガラス管の中を通
しながら、石英ガラス管中に入れたＳｉＣセラミツク板
を高周波によって１５００ｑｏに加熱したＯこのように
してＳｉＣセラミツク板の表面に５ｔ３Ｎ４膜を膜厚的
５μｍ付着させることができた。Example 4 While SiOj4 and NH3 gases were passed through the quartz glass tube, the SiC ceramic plate placed in the quartz glass tube was heated to 1500 qo by high frequency. In this way, a 5t3N4 film was formed on the surface of the SiC ceramic plate. A thickness of 5 μm could be deposited.
実施例５
実施例４と同様にして、１９１Ｌセラミツク板に８１３
Ｎ４膜を膜厚的２０μｍ付着させることができた。Example 5 In the same manner as in Example 4, 813 was applied to a 191L ceramic plate.
The N4 film could be deposited to a thickness of 20 μm.
以上の実施例によってえられたものの熱伝導度および耐
圧を、各材料の特性値を用いて計算により求めた結果を
第１表に示す。Table 1 shows the results of calculations of the thermal conductivity and breakdown voltage of the materials obtained in the above examples using the characteristic values of each material.
第１表から、実施例１でもよいが、効果の大きいのは実
施例２〜４であることがわかる。From Table 1, it can be seen that although Example 1 may be used, Examples 2 to 4 are more effective.
以上の実施例におけるガラス組成および結晶化ガラスの
組成は、前記のものに限定されるものではない。また実
施例においては結晶化ガラスを用いたが、ガラスとセラ
ミックスの微粉から構成された絶縁膜であってもよい。The glass composition and the composition of the crystallized glass in the above examples are not limited to those described above. Further, although crystallized glass is used in the embodiment, an insulating film made of fine powder of glass and ceramics may be used.
以上説明したように、本発明のセラミック基板は熱伝導
性の高い１．６Ｗ１０ｎ ’に以上のＳｉＣセラミツク
板に絶縁膜をコーティングしたので、０．９Ｗ／ａｍ
’に以上の高い熱伝導度を有する＠まだ半導体シリコン
との熱膨脹係数が近いので、半導体に応力がか゛からず
、かつ、ことに耐圧５０ｖ（ガラスのばあい）あるいは
耐圧２ｏｏｖ（結晶化ガラスのばあい）以上あるので、
信頼性の高いセラミック基板かえられる。その上、電圧
と電流との関係がオーミックであり、電圧が高くなって
も突然電流が多く流れるようなことはない。As explained above, the ceramic substrate of the present invention is a 1.6W10n' or higher SiC ceramic board with high thermal conductivity coated with an insulating film.
It has a high thermal conductivity higher than that of semiconductor silicon, so the coefficient of thermal expansion is close to that of semiconductor silicon, so no stress is applied to the semiconductor, and the breakdown voltage is 50V (in the case of glass) or 2oOV (in the case of crystallized glass). Since there are more than that,
Highly reliable ceramic substrate can be replaced. Furthermore, the relationship between voltage and current is ohmic, so even if the voltage increases, a large amount of current will not suddenly flow.
第１図は本発明のセラミック基板に関する説明図、第２
図はＳｉＯセラミック板に絶縁膜を形成したセラミック
基板の熱伝導度と１９１０セラミツク板の熱伝導度との
関係を絶縁膜の厚さおよび熱伝導度をパラメーターとし
てあられしたグラフ、第３図は絶縁膜の厚さとセラミッ
ク基板の熱伝導度との関係を絶縁膜の熱伝導度をパラメ
ーターとしてあられしたグラフ、第４図は絶縁膜破壊強
度と、ＳｉＯセラミック板の熱膨脹係数と絶縁膜の熱膨
脹係数との差との関係を絶縁膜のヤング率（ｌｌｔ）を
パラメーターとしてあられしたグラフである。
（図面の主要符号）
（ｚ） ＋ ｓｔａセラミック板
（２）：絶縁膜FIG. 1 is an explanatory diagram of the ceramic substrate of the present invention, and FIG.
The figure is a graph showing the relationship between the thermal conductivity of a ceramic substrate with an insulating film formed on a SiO ceramic board and the thermal conductivity of a 1910 ceramic board using the thickness and thermal conductivity of the insulating film as parameters. A graph showing the relationship between the thickness of the film and the thermal conductivity of the ceramic substrate using the thermal conductivity of the insulating film as a parameter. 2 is a graph showing the relationship between the difference in and the Young's modulus (llt) of the insulating film as a parameter. (Main symbols in the drawing) (z) + sta ceramic plate (2): Insulating film
Claims (7)
を主成分とするセラミック板の表面に、最終膜厚が５μ
ｍ以上になるように絶縁膜を形成したことを特徴とする
セラミック基板。(1) SiC with thermal conductivity of 1.6 W/cm°C or higher
The final film thickness is 5μ on the surface of the ceramic plate whose main component is
A ceramic substrate characterized in that an insulating film is formed to have a thickness of m or more.
特許請求の範囲第（１）項記載のセラミック基板。(2) The ceramic substrate according to claim (1), wherein the final thickness of the formed insulating film is 20 μm or more.
主成分とするセラミック板熱膨脹係数との差が０〜０．
８×１０＾−＾６／℃の範囲にあるガラスである特許請
求の範囲第（１）項または第（２）項記載のセラミック
基板。(3) The insulating film has a difference between the coefficient of thermal expansion of the insulating film and the coefficient of thermal expansion of a ceramic plate mainly composed of SiC.
The ceramic substrate according to claim (1) or (2), which is glass having a temperature in the range of 8×10^-^6/°C.
主成分とするセラミック板の熱膨脹係数との差が０〜３
．０×１０＾−＾６／℃の範囲にある結晶化ガラスまた
はガラスと結晶の微粉末から形成されたものからなる特
許請求の範囲第（１）項または第（２）項記載のセラミ
ック基板。(4) The insulating film has a difference between the coefficient of thermal expansion of the insulating film and the coefficient of thermal expansion of the ceramic plate mainly composed of SiC of 0 to 3.
．． The ceramic substrate according to claim 1 or 2, which is formed from crystallized glass or glass and crystal fine powder in the range of 0x10^-^6/°C.
囲第（１）項または第（２）項記載のセラミック基板。(5) The ceramic substrate according to claim (1) or (2), wherein the insulating film is a mullite film.
範囲第（１）項または第（２）項記載のセラミック基板
。(6) The ceramic substrate according to claim (1) or (2), wherein the insulating film is a Si_3N_4 film.
末にＳｉ粉末とＣ粉末とを混合して、反応・焼結させて
作られたセラミック板である特許請求の範囲第（１）項
、第（２）項、第（３）項、第（４）項、第（５）項ま
たは第（６）項記載のセラミック基板。(7) Claim (1), wherein the ceramic plate containing SiC as a main component is a ceramic plate made by mixing Si powder with Si powder and C powder, reacting and sintering the mixture; The ceramic substrate according to item (2), item (3), item (4), item (5), or item (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13367384A JPS6112039A (en) | 1984-06-26 | 1984-06-26 | Ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13367384A JPS6112039A (en) | 1984-06-26 | 1984-06-26 | Ceramic substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6112039A true JPS6112039A (en) | 1986-01-20 |
Family
ID=15110221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13367384A Pending JPS6112039A (en) | 1984-06-26 | 1984-06-26 | Ceramic substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6112039A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080272111A1 (en) * | 2006-01-13 | 2008-11-06 | Ngk Insulators, Ltd. | Support structure of heater |
-
1984
- 1984-06-26 JP JP13367384A patent/JPS6112039A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080272111A1 (en) * | 2006-01-13 | 2008-11-06 | Ngk Insulators, Ltd. | Support structure of heater |
| US8411723B2 (en) * | 2006-01-13 | 2013-04-02 | Ngk Insulators, Ltd. | Support structure of heater |
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