JPS61114528A - Transfer and exposure by electron beam - Google Patents
Transfer and exposure by electron beamInfo
- Publication number
- JPS61114528A JPS61114528A JP23606384A JP23606384A JPS61114528A JP S61114528 A JPS61114528 A JP S61114528A JP 23606384 A JP23606384 A JP 23606384A JP 23606384 A JP23606384 A JP 23606384A JP S61114528 A JPS61114528 A JP S61114528A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- substrate
- transfer
- mask
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012546 transfer Methods 0.000 title claims abstract description 57
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 22
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 230000005684 electric field Effects 0.000 abstract description 7
- 230000000149 penetrating effect Effects 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 18
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 229910052697 platinum Inorganic materials 0.000 description 8
- 238000001514 detection method Methods 0.000 description 7
- KOPBYBDAPCDYFK-UHFFFAOYSA-N caesium oxide Chemical compound [O-2].[Cs+].[Cs+] KOPBYBDAPCDYFK-UHFFFAOYSA-N 0.000 description 6
- 229910001942 caesium oxide Inorganic materials 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は電子ビーム転写露光方法に係り、特に電子ビー
ム転写露光に際しての露光領域の位置合わせ方法の改良
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electron beam transfer exposure method, and more particularly to an improvement in a method for positioning an exposure area during electron beam transfer exposure.
半導体集積回路がＬＳＩから超ＬＳＩへと大規模化され
るに伴って、所要パターン幅も１μｍ或いはそれ以下に
縮小されて来ている。As the scale of semiconductor integrated circuits has increased from LSI to VLSI, the required pattern width has also been reduced to 1 μm or less.
このような微細パターンの形成に際し、０．５μｍ程度
の波長の光を用いていた従来の紫外線露光技術は光の回
折により精度維持が不可能になり、これに代わって光に
比べ一桁程度波長が短い電子ビームによる露光技術が用
いられ始めている。When forming such fine patterns, conventional ultraviolet exposure technology that uses light with a wavelength of about 0.5 μm has become impossible to maintain accuracy due to light diffraction, and instead it has become impossible to maintain accuracy using light with a wavelength of about one order of magnitude compared to light. Exposure technology using an electron beam with a short beam length is beginning to be used.
しかし従来多く用いられている電子ビーム露光技術は走
査方式のものであるため、極度に大規模化され極めて多
数の素子数を有する超ＬＳＩ等の量産工程においては、
スルーブツトの面から極めて不利になるという問題があ
る。However, the electron beam exposure technology that has been widely used in the past is a scanning method, so in the mass production process of extremely large scale and extremely large number of elements such as VLSI,
There is a problem in that it is extremely disadvantageous in terms of throughput.
そこで注目されて来たのが電子ビームによる転写露光技
術である。Therefore, transfer exposure technology using electron beams has been attracting attention.
この電子ビーム転写露光技術において当初は、半導体基
板全面へのパターンの一括転写がなされる方式が試みら
れたダが、この方式はウェーハの反り、マスクの反り等
により転写精度が充分に得られず実用的でなかった。Initially, attempts were made to use this electron beam transfer exposure technology to transfer patterns all at once to the entire surface of a semiconductor substrate, but this method did not provide sufficient transfer accuracy due to wafer warping, mask warping, etc. It wasn't practical.
そこで転写精度を更に向上する方式として従来発明者等
によって提供されたのが、単数若しくは複数のチップ領
域を含んだ１０〜２０ｔｍ口程度の領域毎に分割転写を
行うステップアンドリピート方式の電子ビーム転写露光
技術である。Therefore, as a method to further improve the transfer accuracy, the inventors have proposed a step-and-repeat electron beam transfer method in which division transfer is performed for each area of about 10 to 20 tm including a single or multiple chip areas. It is an exposure technology.
この方式はガリウム砒素（ＧａＡｓ）等の半導体基板上
に所定形状の開孔（転写パターンに対応）を有する白金
（Ｐｔ）等の金属膜を形成し、且つ表面を薄い酸化セシ
ウム等の光陰極膜で覆った構造のマスクが用いられ、該
マスク上に光を照射して該半導体基板内に電子を発生さ
せ、この電子を光陰極膜を介し強い正電界によってマス
ク面からビームとして引出し、該電子ビームを磁場によ
って収束し、マスク面に対向して配置された被露光基板
のレジスト膜上に投影する技術である。In this method, a metal film such as platinum (Pt) having openings of a predetermined shape (corresponding to the transfer pattern) is formed on a semiconductor substrate such as gallium arsenide (GaAs), and the surface is coated with a thin photocathode film such as cesium oxide. A mask with a structure covered with This is a technique in which a beam is focused by a magnetic field and projected onto a resist film of a substrate to be exposed, which is placed opposite a mask surface.
即ち上記マスクにおいて、ＧａＡｓ面の仕事関数は酸化
セシウム光陰極膜が被着されることにより光照射によっ
て電子を放出し得るに充分な低い値１．４ｅＶ程度に低
下せしめられるのに対し、白金面の仕事関数は５ｅＶ程
度の大きな値を有する。That is, in the above-mentioned mask, the work function of the GaAs surface is reduced to about 1.4 eV, which is low enough to emit electrons by light irradiation, by coating the cesium oxide photocathode film, whereas The work function of has a large value of about 5 eV.
このよ゛うなマスク面に２〜３ｅＶ程度のエネルギーを
有する波長４０００〜６０００人の可視光を照射した時
、黒色のＧａＡｓ面はこの光を良く吸収するのでフォト
ンがＧａＡｓ内に注入され、該ＧａＡｓ内の電子が上記
ＧａＡｓ面の仕事関数より大きい光のエネルギーによっ
て叩き出され、正電界によって引かれ且つ磁場によって
収束されて被露光基板面に到達する。これに反し白金面
は光の吸収が少なく、且つ前記のように５ｅＶ程度の大
きな仕事関数を存するので電子を放出しないので、上記
ＧａＡｓ面から放出された電子ビームによって被露光基
板上に所定形状を有する白金膜の開孔パターンの転写が
なされる。When such a mask surface is irradiated with visible light having a wavelength of 4,000 to 6,000 wavelengths having an energy of about 2 to 3 eV, the black GaAs surface absorbs this light well, so photons are injected into the GaAs, and the GaAs The electrons inside are ejected by the energy of light greater than the work function of the GaAs surface, and are attracted by the positive electric field and converged by the magnetic field to reach the surface of the substrate to be exposed. On the other hand, the platinum surface absorbs less light and has a large work function of about 5 eV as described above, so it does not emit electrons, so the electron beam emitted from the GaAs surface forms a predetermined shape on the substrate to be exposed. The aperture pattern of the platinum film is transferred.
かかるステップアンドリピート方式の転写露光技術にお
いては、スループットの増大及び重ね合わせ精度の向上
のために、時間の短縮及び精度の向上が図れる位置合わ
せ手段の開発が要望されている。In such step-and-repeat transfer exposure technology, in order to increase throughput and improve overlay accuracy, there is a demand for the development of an alignment means that can shorten time and improve accuracy.
第４図はステップアンドリピート方式の等倍電子ビーム
転写露光装置の従来構造を示す模式側断面図である。な
お理解を容易にするために、−個のチップ・パターンを
具備するマスクが搭載されている。FIG. 4 is a schematic side sectional view showing the conventional structure of a step-and-repeat type equal-magnification electron beam transfer exposure apparatus. Note that for ease of understanding, a mask with - chip patterns is mounted.
図において、１はガリウム砒素（ＧａＡｓ）等の半導体
よりなるマスク、２は白金（Ｐ ｔ）等の金属よりなる
マスク膜、３ａはチップパターン、３ｂは位置合わせ用
パターン、４は酸化セシウム等よりなる光陰極膜、５は
マスク支持体、６は被露光基板、７は位置合わせマーク
、８は電子ビーム用レジスト膜、９はＸ−Ｙステージ、
１０ａ、 １０ｂはミラー、１１ａ、 ｌｌｂは偏向コ
イル、ＥＢｌ、ＥＢ。In the figure, 1 is a mask made of a semiconductor such as gallium arsenide (GaAs), 2 is a mask film made of a metal such as platinum (Pt), 3a is a chip pattern, 3b is an alignment pattern, and 4 is made of cesium oxide, etc. 5 is a mask support, 6 is a substrate to be exposed, 7 is an alignment mark, 8 is a resist film for electron beam, 9 is an X-Y stage,
10a and 10b are mirrors, 11a and llb are deflection coils, EBl and EB.
は電子ビーム、ｈν１．ｈν２は゛可視光、Ｈは磁場の
方向を表す矢印、Ｅｌ は電子ビーム加速用の直流電源
、Ｅ２は中間電位を付与する直流電源、Ｇは接地を示す
。is an electron beam, hν1. hν2 is visible light, H is an arrow representing the direction of the magnetic field, El is a DC power source for electron beam acceleration, E2 is a DC power source that provides an intermediate potential, and G is ground.
露光に際しては、被露光基板６を所定の位置にステップ
移動し、ミラー１０ｂを介し可視光ｈν２によりマスク
ｌの位置合わせ用パターン３ｂ上を８０ＫｅＶ程度の電
界及び磁場Ｈによって被露光基板に予め整列配設されて
いる所定の位置合わせマーク７上に収束し、且つ偏向コ
イル１１によって該位置合わせマーク７上を走査するこ
とによって該位置合わせマーク７の位置を検出し露光領
域の位置決めを行った後、
可視光ｈν２を遮断し、ミラー１０ａを介し可視光ｈν
１によりチップパターン３ａ上を照射し、該チップパタ
ーン３ａから放射される電子ビームＥ Ｂ ＋を前記電
界及び磁場Ｈによって収束して被露光基板６面のレジス
ト膜８上に投影する。At the time of exposure, the substrate 6 to be exposed is moved stepwise to a predetermined position, and the alignment pattern 3b of the mask 1 is preliminarily aligned on the substrate to be exposed using an electric field and a magnetic field H of about 80 KeV using visible light hv2 via the mirror 10b. After converging on a predetermined alignment mark 7 provided and scanning the alignment mark 7 by the deflection coil 11 to detect the position of the alignment mark 7 and positioning the exposure area, The visible light hν2 is blocked and the visible light hν2 is transmitted through the mirror 10a.
The electron beam E B + emitted from the chip pattern 3a is converged by the electric field and magnetic field H and projected onto the resist film 8 on the surface of the substrate 6 to be exposed.
次いで被露光基板を順次所定の方向に所定の距離ステッ
プ移動し、前記操作を繰り返し被露光基板全面にチップ
・パターンの転写がなされる。Next, the substrate to be exposed is sequentially moved step by step in a predetermined direction by a predetermined distance, and the above operation is repeated to transfer the chip pattern onto the entire surface of the substrate to be exposed.
第５図は上記従来の方法に用いるマスク１の、チップパ
ターン３ａとそれに対応する位置合わせパターン３ｂ＋
、３ｂ２を模式的に示した平面図である。FIG. 5 shows a chip pattern 3a and a corresponding alignment pattern 3b+ of the mask 1 used in the above conventional method.
, 3b2 is a plan view schematically showing.
同図のように従来のマスクにおいては、例えばＧａＡｓ
マスク基板１上に白金膜２によって画定されたチップ領
域１２（上記チップパターン３ａに対応）内の転写パタ
ーン例えば１３ａ、 １３ｂ、 １３ｃと、該チップ領
域１２に近接し且つ同様に白金膜２によって画定された
１μｍ×５μｍ程度の長方形の位置合わせ用パターン３
ｂ＋ と３ｂｚが形成され、該マスク基板Ｉ上が図示さ
れない酸化セシウム等の光陰極膜によって覆われてなっ
ている。As shown in the figure, in the conventional mask, for example, GaAs
Transfer patterns, for example, 13a, 13b, and 13c in a chip region 12 (corresponding to the above chip pattern 3a) defined by a platinum film 2 on a mask substrate 1, and transfer patterns close to the chip region 12 and similarly defined by a platinum film 2. Rectangular alignment pattern 3 of about 1 μm x 5 μm
b+ and 3bz are formed, and the mask substrate I is covered with a photocathode film of cesium oxide or the like (not shown).
なお回転補正に際しては２個の位置合わせ用パターン３
ｂ＋ と３ｂｔが共に用いられ、単なる位置合わせに際
しては何れか一方の位置合わせ用パターンが用いられる
。In addition, when performing rotation correction, two alignment patterns 3 are used.
Both b+ and 3bt are used, and either one of the alignment patterns is used for simple alignment.
上記従来装置による転写露光方法においては、前述した
ように第３図に示す１μｒｒｌｘ５μｍ程度の微少位置
合わせ用パターン上に光を照射し、該微少パターンから
放射される電子ビームにより被露光基板の位置合わせマ
ーク上を走査して露光領域の位置合わせがなされ、然も
該位置合わせに際しては通常チップパターンの転写の場
合と同様の強度の光が用いられるので、該位置合わせパ
ターンから放出される電子ビーム強度が非常に弱く、ノ
イズの影響等により位置合わせマークの検出精度が低下
し、且つ検出時間が長引くという問題がある。In the transfer exposure method using the above-mentioned conventional apparatus, as described above, light is irradiated onto a minute alignment pattern of approximately 1 μrrl x 5 μm shown in FIG. 3, and the substrate to be exposed is aligned using an electron beam emitted from the minute pattern. The exposure area is aligned by scanning the mark, and since light of the same intensity as that used for normal chip pattern transfer is used for this alignment, the intensity of the electron beam emitted from the alignment pattern is There is a problem that the detection accuracy of the alignment mark is decreased due to the influence of noise, and the detection time is prolonged.
そこでこの検出精度を上げるために位置合わせに際して
の照射光を充分に強め位置合わせパターンから放射され
る電子ビーム強度を高めようとすると、該照射光のエネ
ルギーによって位置合わせパターン上の光陰極膜が焼け
その機能が失われるという問題を生ずる。Therefore, when attempting to increase the intensity of the electron beam emitted from the alignment pattern by sufficiently intensifying the irradiation light during alignment to increase the detection accuracy, the energy of the irradiation light burns out the photocathode film on the alignment pattern. A problem arises in that the function is lost.
上記問題点の解決は、半導体基板面に所定の形状の開孔
を有する金属膜を設け、表面を光陰極膜で覆ってなる転
写マスク面に光を照射し、この際該金属膜の開孔内に表
出する半導体基板面から選択的に放出される第１の電子
ビームにより被露光基板上に該開孔像の転写露光を行う
電子ビームによる転写露光方法において、該転写マスク
に貫通孔を設け、該マスクの背面から該貫通孔を介し該
被露光基板上に第２の電子ビームを照射し、該第２の電
子ビームによって該被露光基板の位置合わせマークを検
出して該第１の電子ビームによる転写露光に際しての位
置決めを行う本発明による電子ビーム転写露光方法によ
り達成される。The solution to the above problem is to provide a metal film with openings of a predetermined shape on the surface of the semiconductor substrate, and irradiate the transfer mask surface, which is made by covering the surface with a photocathode film. In a transfer exposure method using an electron beam, in which a first electron beam selectively emitted from a surface of a semiconductor substrate exposed in the semiconductor substrate is used to transfer and expose the aperture image onto a substrate to be exposed, a through hole is formed in the transfer mask. irradiating the exposed substrate with a second electron beam from the back of the mask through the through hole, detecting the alignment mark on the exposed substrate with the second electron beam, and detecting the positioning mark on the exposed substrate. This is achieved by the electron beam transfer exposure method according to the present invention, which performs positioning during transfer exposure using an electron beam.
〔作用〕
即ち本発明の方法においては転写マスクの所定位置に貫
通孔を設け、転写マスクの背面から該貫通孔を介し、別
の電子ビーム発生装置で形成した充分に高出力を有する
電子ビームを被露光基板上に照射し、該電子ビームで該
位置合わせマーク上を走査することによって該位置合わ
せマークの位置を検出し、該マークの検出位置と上記マ
スクの貫通孔位置との関係から露光領域の位置決めを行
うものである。[Operation] That is, in the method of the present invention, a through hole is provided at a predetermined position of the transfer mask, and an electron beam having a sufficiently high output generated by another electron beam generator is passed from the back side of the transfer mask through the through hole. The position of the alignment mark is detected by irradiating the substrate to be exposed and scanning the alignment mark with the electron beam, and the exposure area is determined from the relationship between the detected position of the mark and the position of the through hole of the mask. It is used for positioning.
この方法によれば、位置合わせ用に高出力の電子ビーム
が用いられるので位置合わせ時間は短縮され、且つ位置
合わせに際してのノイズ等の影響が無視されるので位置
合わせ精度も向上する。According to this method, since a high-power electron beam is used for alignment, the alignment time is shortened, and since the effects of noise and the like during alignment are ignored, alignment accuracy is also improved.
以下本発明の方法を、図示実施例により具体的に説明す
る。The method of the present invention will be specifically explained below using illustrated examples.
第１図は本発明の方法の一実施例を示す装置の模式側断
面図、第２図は上記実施例に用いる転写マスクの模式平
面図（ａ）及びそのＡ−Ａ矢視断面図（ｂ）、第３図は
上記実施例に用いる被露光基板の模式平面図である。FIG. 1 is a schematic side sectional view of an apparatus showing an embodiment of the method of the present invention, and FIG. ), FIG. 3 is a schematic plan view of the substrate to be exposed used in the above embodiment.
全図を通じ同一対象物は同一符号で示す。Identical objects are indicated by the same reference numerals throughout the figures.
本発明の方法に用いる転写露光装置は例えば第１図に示
すように、
被露光基板６が搭載され、該被露光基板６を所定方向に
所定の距離ステップ移動するｘ−ｙステージ９、
その上方に被露光基板６に対向して転写マスク１０１を
固持するマスク支持体５、
転写マスク１０１のチップ領域１２即ちチップ・パター
ン３ａに可視光ｈνを照射するミラー１ｏ、電子ビーム
・ガン１５及び複数の電子レンズ１６ａ。For example, as shown in FIG. 1, the transfer exposure apparatus used in the method of the present invention includes an x-y stage 9 on which a substrate 6 to be exposed is mounted and moves the substrate 6 to be exposed a predetermined distance in steps in a predetermined direction; A mask support 5 that holds the transfer mask 101 facing the substrate 6 to be exposed, a mirror 1o that irradiates visible light hv onto the chip area 12 of the transfer mask 101, that is, the chip pattern 3a, an electron beam gun 15, and a plurality of Electronic lens 16a.
１６ｂ等により構成され、且つ周囲に電界遮蔽手段１７
を有し、更にＸ−Ｙ方向に移動可能な位置合わせ用の第
２の電子ビームＥＢ！発生手段、１８、電子ビーム照射
位置を偏向する偏向コイルｌｌａ及びｌｌｂ、
を真空系内に配置し、該真空系の外部に転写マスク１０
１から被露光基板６に向かう垂直磁場Ｈを形成する図示
しない磁場形成手段を有してなっている。16b, etc., and surrounding electric field shielding means 17.
and a second electron beam EB for positioning which is further movable in the X-Y direction. A generating means 18, deflection coils lla and llb for deflecting the electron beam irradiation position are arranged in a vacuum system, and a transfer mask 10 is placed outside the vacuum system.
It has a magnetic field forming means (not shown) that forms a perpendicular magnetic field H directed from 1 to the substrate 6 to be exposed.
又上記転写マスク１０１は詳細を第２図（ａ）及び伽）
に示すように、例えばＧａＡｓよりなるマスク基板１上
に、従来同様チップ領域１２に開孔よりなる転写パター
ン１３ａ、 １３ｂ、 １３ｃ等を有する白金マスク膜
２が形成され、表面が例えば酸化セシウムよりなる２０
〜３０人程度の薄い光陰極膜４で覆われ、且つチップ領
域１２即ちチップ・パターン３ａの近傍の所定の例えば
対角位置に各１個の１μｍｘ５μｍ程度の長方形の位置
合わせ用貫通孔１４ａ、 １４ｂが設けられてなってい
る。The details of the transfer mask 101 are shown in FIG.
As shown in FIG. 2, a platinum mask film 2 having transfer patterns 13a, 13b, 13c, etc. made of openings in the chip region 12 is formed on a mask substrate 1 made of, for example, GaAs, as in the conventional case, and the surface is made of, for example, cesium oxide. 20
~30 rectangular positioning through holes 14a, 14b each of which are covered with a thin photocathode film 4 of approximately 1 μm x 5 μm at predetermined, for example, diagonal positions near the chip area 12, that is, the chip pattern 3a. is provided.
なお該貫通孔１４ａ、 １４ｂの背面側が大きな溝に形
成されているのは、該貫通孔の高精度形成を容易ならし
めるためである。The reason why the back sides of the through holes 14a and 14b are formed into large grooves is to facilitate the high precision formation of the through holes.
又上記マスク１０１からパターンの転写がなされる被露
光基板６は第３図に示すように、チップ・パターン３ａ
が複数個整列転写される領域である被転写領域１１２の
間隙部の所定位置に溝よりなる位置合わせマスク７が整
列配設され、上面に通常の厚さの電子ビーム用レジスト
膜８が被着されてなっている。Further, as shown in FIG. 3, the exposed substrate 6 to which the pattern is transferred from the mask 101 has a chip pattern 3a.
An alignment mask 7 made of grooves is aligned and arranged at a predetermined position in the gap of the transfer target area 112, which is an area where a plurality of images are aligned and transferred, and an electron beam resist film 8 of a normal thickness is coated on the upper surface. It has been done.
露光に際しては第１図に示すように、Ｘ−Ｙステージ９
及びマスク支持体５を介し直流電源Ｅ。During exposure, as shown in FIG.
and a DC power source E via the mask support 5.
によって転写マスク１０１と被露光基板６の間に８０Ｋ
Ｖ程度の均一な加速電界を形成する。なおミラーｌＯに
対しては、上記均一な加速電界が乱されないような所定
の中間電位例えば４０ＫＶが直流電ＩＩＡＥ２により印
加される。80K between the transfer mask 101 and the exposed substrate 6
A uniform accelerating electric field of approximately V is formed. Note that a predetermined intermediate potential, for example, 40 KV, which does not disturb the uniform accelerating electric field, is applied to the mirror IO by the DC current IIAE2.
この状態において被露光基板６を所定の位置にステップ
移動し、先ず電子ビーム発生手段１８によ。In this state, the substrate 6 to be exposed is moved step by step to a predetermined position, and is first exposed to the electron beam generating means 18.
り転写マスク１０１の背面から位置合わせ用貫通孔１４
ａ上に該貫通孔を充分に覆う大きさの例えば１０μｍφ
程度のビーム・スポット径を有し、５０Ａ／３２程度の
出力を有する第２の電子ビームＥＢＫを照射し、該貫通
孔１４ａの投影ビームによって被露光基板６面の所定の
位置合わせマーク７ａ上を走査して、該位置合わせマー
ク７ａの位置を検出する。alignment through holes 14 from the back of the transfer mask 101.
For example, 10 μmφ of a size that sufficiently covers the through hole is placed on a.
A second electron beam EBK having a beam spot diameter of approximately 50A/32 is irradiated, and a predetermined positioning mark 7a on the surface of the substrate 6 to be exposed is irradiated with the projection beam of the through hole 14a. The position of the alignment mark 7a is detected by scanning.
なお上記第２の電子ビームＥＢ、のエネルギーは転写マ
スク１０１の表面においてＯｖに成るように調節され、
該投影ビームの走査は偏向コイル１１ａ、 ｌｌｂによ
ってなされる。Note that the energy of the second electron beam EB is adjusted to Ov on the surface of the transfer mask 101,
Scanning of the projection beam is performed by deflection coils 11a, llb.
この位置合わせマークの検出には上記のように大きな出
力を有する第２の電子ビームＥＢｔが用いられるので、
位置合わせマークの検出精度は従来に比べ大幅に向上し
、且つ検出時間も大幅に短縮される。Since the second electron beam EBt, which has a large output as described above, is used to detect this alignment mark,
The accuracy of detecting alignment marks is significantly improved compared to the conventional method, and the detection time is also significantly shortened.
次いで電子ビーム発生手段１８を同図に点線で示すよう
に位置合わせ用貫通孔１４ｂ上に移動し、上記同様に位
置合わせマーク７ｂの検出を行い、両方即ち７ａと７ｂ
の検出データにより被露光基板６の回転誤差を検出する
。Next, the electron beam generating means 18 is moved onto the positioning through hole 14b as shown by the dotted line in the figure, and the positioning mark 7b is detected in the same manner as described above, and both 7a and 7b are detected.
The rotational error of the exposed substrate 6 is detected based on the detected data.
そして上記位置検出における検出位置の誤差及び回転誤
差を補正した電流を偏向コイルｌｌａ、ｌｌｂ及び図示
しないｌｌｃ、 ｌｌｄに流し、この状態において従来
通りミラー１０を介して転写マスク１０１のチップ領域
１２面に可視光ｈνを照射し、該チップ領域１２面から
放射される第１の電子ビームＥＢ、を上記偏向コイルで
補正偏向して被露光基板６のレジスト膜８上に投影し、
チップ領域１２内の転写パターン例えば第２図に示す１
３ａ、 １３ｂ、 １３ｃ等をレジスト膜８上に転写す
る。Then, a current that has corrected the detected position error and rotational error in the position detection is passed through the deflection coils lla, llb and llc, lld (not shown), and in this state, it is applied to the chip area 12 surface of the transfer mask 101 via the mirror 10 as before. irradiating with visible light hν, and correcting and deflecting the first electron beam EB emitted from the surface of the chip region 12 by the deflection coil and projecting it onto the resist film 8 of the substrate to be exposed 6;
The transfer pattern in the chip area 12, for example 1 shown in FIG.
3a, 13b, 13c, etc. are transferred onto the resist film 8.
なお上記被露光基板の回転補正は各ステップ毎に行う必
要はなく、回転補正を行わないステップにおいては位置
合わせマーク７ａ若しくは７ｂの何れか１個の位置を検
出するだけで良い。Note that it is not necessary to perform rotational correction of the exposed substrate at each step, and in steps where rotational correction is not performed, it is sufficient to detect the position of either one of the alignment marks 7a or 7b.
また上記実施例においてはチップ毎に転写を行ったが、
チップが小さい場合には複数のチップをまとめて一括転
写するのが効率的である。In addition, in the above embodiment, transfer was performed for each chip, but
When the chips are small, it is efficient to transfer multiple chips at once.
また本発明の方法に用いる半導体マスク基板は上記Ｇａ
ｋｓに限られるものでなく、光陰極膜も酸化セシウムに
限られるものではない。Further, the semiconductor mask substrate used in the method of the present invention is made of the above-mentioned Ga
The photocathode film is not limited to cesium oxide.
以上説明のように本発明の方法によれば、電子ビームに
よるステップアンドリピート方式の転写露光において被
露光基板に配設された位置合わせマークの検出精度が大
幅に向上し、且つ検出時間も大幅に短縮される。As explained above, according to the method of the present invention, the detection accuracy of alignment marks provided on the exposed substrate in step-and-repeat transfer exposure using an electron beam is greatly improved, and the detection time is also significantly reduced. be shortened.
従って本発明は超ＬＳＩ等極度に高集積化される半導体
集積回路装置を量産する際における、製造歩留りの向上
及びスループットの向上に極めてを効である。Therefore, the present invention is extremely effective in improving manufacturing yield and throughput when mass producing extremely highly integrated semiconductor integrated circuit devices such as VLSIs.
第１図は本発明の電子ビーム転写露光方法の一実施例を
示す装置の側断面図、
第２図は上記実施例に用いる転写マスクの模式平面図（
ａｌ及びそのＡ−Ａ矢視断面図（ｂ）、第３図は上記実
施例に用いる被露光基板の模式第４図は従来方法を示す
装置の模式側断面図、第５図は従来方法に用いる転写マ
スクの模式平面図である。
図において、
ｌはＧａＡｓマスク基板、
２は白金マスク膜、
４は光陰極膜、
５はマスク支持体、
６は被露光基板、
７．７ａ、７ｂは位置合わせマーク、
８は電子ビーム用レジスト膜、
９はＸ−Ｙステージ、
１０はミラー、
１１ａ、１１ｂは偏向コイル、
１２はチップ領域、
１３ａ＋ Ｌ３ｂ、 １３ｃは転写パターン、１４ａ、
１４ｂは位置合わせ用貫通孔、１８は第２の電子ビー
ム発生手段、
ｈνは可視光、
ＥＢ、、ＥＢ！は第１．第２の電子ビーム、Ｈは磁場
を示す。FIG. 1 is a side sectional view of an apparatus showing an embodiment of the electron beam transfer exposure method of the present invention, and FIG. 2 is a schematic plan view of a transfer mask used in the above embodiment (
al and its A-A cross-sectional view (b), FIG. 3 is a schematic diagram of the substrate to be exposed used in the above embodiment, FIG. 4 is a schematic side sectional view of the apparatus showing the conventional method, and FIG. It is a schematic plan view of the transfer mask used. In the figure, l is a GaAs mask substrate, 2 is a platinum mask film, 4 is a photocathode film, 5 is a mask support, 6 is a substrate to be exposed, 7.7a and 7b are alignment marks, 8 is a resist film for electron beam , 9 is an X-Y stage, 10 is a mirror, 11a, 11b are deflection coils, 12 is a chip area, 13a + L3b, 13c is a transfer pattern, 14a,
14b is a through hole for positioning, 18 is a second electron beam generating means, hν is visible light, EB,,EB! is the first. Second electron beam, H indicates magnetic field.
Claims (1)
け、表面を光陰極膜で覆ってなる転写マスク面に光を照
射し、この際該金属膜の開孔内に表出する半導体基板面
から選択的に放出される第１の電子ビームにより被露光
基板上に該開孔像の転写露光を行う電子ビームによる転
写露光方法において、該転写マスクに貫通孔を設け、該
マスクの背面から該貫通孔を介し該被露光基板上に第２
の電子ビームを照射し、該第２の電子ビームによって該
被露光基板の位置合わせマークを検出して該第１の電子
ビームによる転写露光に際しての位置決めを行うことを
特徴とする電子ビーム転写露光方法。A metal film having openings of a predetermined shape is provided on the semiconductor substrate surface, and the surface is covered with a photocathode film. Light is irradiated onto the transfer mask surface, and at this time, the semiconductor substrate is exposed within the openings of the metal film. In an electron beam transfer exposure method in which a first electron beam selectively emitted from a surface transfers and exposes the aperture image onto a substrate to be exposed, a through hole is provided in the transfer mask, and a through hole is provided in the transfer mask, and A second layer is placed on the exposed substrate through the through hole.
An electron beam transfer exposure method comprising: irradiating the substrate with an electron beam, detecting an alignment mark on the substrate to be exposed using the second electron beam, and performing positioning during transfer exposure using the first electron beam. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23606384A JPS61114528A (en) | 1984-11-09 | 1984-11-09 | Transfer and exposure by electron beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23606384A JPS61114528A (en) | 1984-11-09 | 1984-11-09 | Transfer and exposure by electron beam |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61114528A true JPS61114528A (en) | 1986-06-02 |
Family
ID=16995175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23606384A Pending JPS61114528A (en) | 1984-11-09 | 1984-11-09 | Transfer and exposure by electron beam |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61114528A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6236820A (en) * | 1985-08-12 | 1987-02-17 | Canon Inc | Alignment device and its mask |
-
1984
- 1984-11-09 JP JP23606384A patent/JPS61114528A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6236820A (en) * | 1985-08-12 | 1987-02-17 | Canon Inc | Alignment device and its mask |
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