JPS61112336A - Die bonder - Google Patents

Die bonder

Info

Publication number
JPS61112336A
JPS61112336A JP23447584A JP23447584A JPS61112336A JP S61112336 A JPS61112336 A JP S61112336A JP 23447584 A JP23447584 A JP 23447584A JP 23447584 A JP23447584 A JP 23447584A JP S61112336 A JPS61112336 A JP S61112336A
Authority
JP
Japan
Prior art keywords
chip
scrubbing
collet
package
scrub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23447584A
Other languages
Japanese (ja)
Inventor
Katsuhiko Suzuki
勝彦 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP23447584A priority Critical patent/JPS61112336A/en
Publication of JPS61112336A publication Critical patent/JPS61112336A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
    • H01L2224/75302—Shape
    • H01L2224/75303—Shape of the pressing surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/83805—Soldering or alloying involving forming a eutectic alloy at the bonding interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To improve the reproducibility of the suction of a chip and the precision of the position of stoppage and a parallelism with a package cavity on scrubbing and the like by separating scrubbing operation from a collet holder for sucking the chip and scrubbing the package side. CONSTITUTION:A chip transfer head 16 sucks a chip in a chip-position correcting section 13 and a chip in an expanding ring 20, is lifted and is moved in the right direction, and chips sucked to a chip pickup collet 17 and a chip scrubbing collet 18 are each lowered to the chip-position correcting section 13 and a cavity in a package on a scrubbing heater 14. An Au-Si solder material in the cavity in the package and the back of the chip are brought into contact in parallel, and the scrubbing motor 14 is scrubbed through an X-Y table 24 by a pulse motor 23 under the state. The Au-Si solder material and the chip Si are brought into pressure-contact with a scrubbing section anti-oxidized by an N2 hot gas, and an Au-Si eutectic alloy is formed and fixed between the package cavity and the back of the chip.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体素子（以後チップと呼ぶ）をパッケー
ジに固着接続するダイボンダーの構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of a die bonder that firmly connects a semiconductor element (hereinafter referred to as a chip) to a package.

〔従来の技術〕[Conventional technology]

従来、半導体チップをパッケージに固着接続するダイボ
ンダーは一般に次の様なものであった。Conventionally, die bonders for firmly connecting semiconductor chips to packages have generally been of the following type.

すなわち、第３図（ａ）　、　（ｂ）に示すようにセラ
ミックパッケージ１のダイボンド部２にＡｕ−８ｔロウ
材３を敷き、前記パッケージ１を、窒素カバーされかつ
４００〜４３０℃位の温度にコントロールされたヒータ
ーブロック４上にのせて前記パッケージ１を加熱する。That is, as shown in FIGS. 3(a) and 3(b), an Au-8t brazing material 3 is placed on the die bonding part 2 of the ceramic package 1, and the package 1 is covered with nitrogen and heated to a temperature of about 400 to 430°C. The package 1 is heated by being placed on a controlled heater block 4.

次に拡大リング５のプラスチックフィルム６のチップ７
上に位置するように、回転可能なアーム式コレットホル
ダー８に装着されたコレット９の吸着部が上下運動及び
回転運動をする。Next, the tip 7 of the plastic film 6 of the expansion ring 5
The suction part of the collet 9 mounted on the rotatable arm-type collet holder 8 moves up and down and rotates so as to be located above.

次に実体顕微鏡１０をのぞきながら、拡大リング５を動
かしてチップ７を顕微鏡のへアーラインに位置合せし、
スタートスイッチをＯＮすると、コレットに接続された
吸着ポンプによる真空引きでコレット９が半導体チップ
を吸着する。コレット９に吸着された半導体チップ７は
アーム式コレットホルダー８と共に上昇し、９０°回転
してヒーターブロック４の上に載置しであるパッケージ
１のダイボンド部２の上部で止まり、次に下降しダイボ
ンド部２に敷いであるＡｕ−８ｉロウ材にチップ裏面が
接触、押し当てられる。Next, while looking through the stereomicroscope 10, move the magnifying ring 5 to align the tip 7 with the hairline of the microscope.
When the start switch is turned on, the collet 9 suctions the semiconductor chip by vacuuming with a suction pump connected to the collet. The semiconductor chip 7 adsorbed by the collet 9 rises together with the arm-type collet holder 8, rotates 90 degrees, stops at the top of the die bonding part 2 of the package 1 placed on the heater block 4, and then descends. The back surface of the chip is brought into contact with and pressed against the Au-8i brazing material laid on the die bonding part 2.

コレットホルダー８が０．３〜０．５ｎ位の振幅でスク
ラブを開始すると、チップ裏面シリコンとＭ−８ｉロウ
材とが合金化してＡｕ−Ｓｉ共晶合金を生成してチップ
７をダイボンド部８に固着させる。上述したチップをダ
イボンド部２に固着する装置のアーム式コレットホルダ
ー機構は、カム１（［％−ターにより駆動し、アーム式
コレットホルダー８を回転させると共に、Ｘ又はＹ方向
にコレットを振動させてスクラブさせる方法である。When the collet holder 8 starts scrubbing with an amplitude of about 0.3 to 0.5n, the silicon on the back surface of the chip and the M-8i brazing material are alloyed to form an Au-Si eutectic alloy, and the chip 7 is attached to the die bonding part 8. to be fixed to. The arm-type collet holder mechanism of the device for fixing the chip to the die-bonding part 2 described above is driven by a cam 1 ([%-tar) to rotate the arm-type collet holder 8 and vibrate the collet in the X or Y direction. This is a method of scrubbing.

〔発明が解決しようとする問題点〕 しかしながら、従来の方法は次に述べる様な欠点があっ
た。即ち、従来の装置はコレットホルダー８が吸着、移
送、位置決め、スクラブのすべての動作を受は持つため
にカム１０の構造が複雑にならざるを得す、停止位置が
不正確となり易く、再現性に乏しいという欠点があった
。さらにチップ吸着時にコレットによりチップ表面にキ
ズをつけやすく、又スクラブ量、スクラブスピードのコ
ントロールがむずかしい等の欠点を有していた。特に本
構造の大きな欠点としてアーム式コレットホルダーが順
次チップ吸着、旋回、スクラブの各動作を行う構造であ
るので、コレットホルダーの重量を軽くした構造が必要
となり、その為にコレットホルダーをスクラブする時に
コレットを支持している軸がブレで半導体チップ裏面と
パッケージのキャビティが平行にスクラブされない。特
にこの現象は大型の半導体チップを固着する場合には半
導体チップの裏面のＡｕ−８ｔ共晶合金の生成不足を誘
起して濡れ不足、チップクラッタなどの不良が多発する
大きな原因となる。　　　　　　　　　　、ｌｘ本発明
は上述したチップ吸着と停止位置精度の再現性、スクラ
ブ時のパッケージキャビティとの平行度等を改善する為
にチップ吸着用コレットホルダーからスクラブ動作を分
離してパッケージ側をスクラブし、小チップから大型チ
ップ塩でダイボンドを可能とするダイボンダー装置を提
供するものである。[Problems to be Solved by the Invention] However, the conventional methods have the following drawbacks. That is, in the conventional device, the collet holder 8 has all the operations of suction, transfer, positioning, and scrubbing, so the structure of the cam 10 has to be complicated, the stopping position tends to be inaccurate, and the reproducibility is poor. It had the disadvantage of being lacking in Furthermore, the collet easily scratches the surface of the chip when adsorbing the chip, and it is difficult to control the scrubbing amount and scrubbing speed. In particular, a major drawback of this structure is that the arm-type collet holder performs the following operations: chip suction, rotation, and scrubbing in sequence, so a structure that reduces the weight of the collet holder is required. The shaft supporting the collet is unstable, and the back surface of the semiconductor chip and the cavity of the package are not scrubbed parallel to each other. In particular, when a large semiconductor chip is fixed, this phenomenon induces insufficient formation of Au-8t eutectic alloy on the back surface of the semiconductor chip, and is a major cause of frequent defects such as insufficient wetting and chip clutter. , lx The present invention separates the scrubbing operation from the chip suction collet holder and scrubs the package side in order to improve the reproducibility of the chip suction and stop position accuracy mentioned above, the parallelism with the package cavity during scrubbing, etc. To provide a die bonder device that enables die bonding of small chips to large chips using salt.

〔問題点を解決するための手段〕[Means for solving problems]

本発明はパッケージにシリコンチップを固着するダイボ
ンダーにおいて、ワーク搬送部、Ａｕ−Ｓｉテープカッ
ター、チップ位置修正部、チップ目合せ部、スクラブヒ
ーター、チップスクラブコレット、チップピックアップ
コレット、テープ吸着ノズルを有し、二軸方向に反復運
動するチップ移送ヘッドにチップピックアップコレット
、チップスクラブコレット、テープ吸着ノズルを一定間
隔で取付け、更にチップ移送ヘッドに相対する位置に拡
大リング、チップ位置修正部、スクラブヒーター、Ａｕ
−５ｔテープカツターを一定間隔で設け、目合せ済チッ
プの吸着、チップ位置修正部のチップ吸着、Ａｕ−８ｔ
テープの吸着スクラブ等の動作がチップ移送ヘッドの一
連動作により行われるようにしたことを特徴とするダイ
ボンダーである。The present invention provides a die bonder for bonding silicon chips to a package, which includes a workpiece conveyance section, an Au-Si tape cutter, a chip position correction section, a chip alignment section, a scrub heater, a chip scrub collet, a chip pickup collet, and a tape suction nozzle. A chip pickup collet, a chip scrub collet, and a tape suction nozzle are attached at regular intervals to a chip transfer head that moves repeatedly in biaxial directions, and an enlargement ring, a chip position correction unit, a scrub heater, and an Au
-5t tape cutters are installed at regular intervals, adsorption of aligned chips, chip adsorption of chip position correction part, Au-8t
This die bonder is characterized in that operations such as tape suction scrubbing are performed by a series of operations of a chip transfer head.

〔実施例〕〔Example〕

以下に、本発明の実施例を図によって説明する。 Embodiments of the present invention will be described below with reference to the drawings.

第１図（ａ）　、　（ｂ）は本発明の第１実施例を示す
側面図、平面図である。第２図は本発明の第２の実施例
を示す斜視図であり、各機構部が２台並列に設置されて
いる点が第１の実施例と相違するが、各機構部の配列順
序は第１の実施例と同一であり、その配置関係がより明
らかにされているので、第１の実施例を説明する際に第
２図を用いて説明する。FIGS. 1(a) and 1(b) are a side view and a plan view showing a first embodiment of the present invention. FIG. 2 is a perspective view showing a second embodiment of the present invention, which differs from the first embodiment in that two of each mechanical section are installed in parallel, but the arrangement order of each mechanical section is Since this is the same as the first embodiment and the arrangement relationship is more clear, FIG. 2 will be used to describe the first embodiment.

第１図（ａ）　、　（ｂ）、第２図において、本発明装
置はワーク搬送部１１、チップ移送ヘッド１６、Ｙ−Ｚ
方向に変位するヘッドリフターシリンダー１２、チップ
位置修正部１３、スクラブヒーター１４から構成されて
いる。ワーク搬送部１１は、２台のエアーシリンダーの
軸を用いてＸ−Ｚ方向に駆動させ、パッケージをヒータ
ーブロック１５の下部よりすくい上げて搬送し次段のヒ
ーターブロック１５に置く。チップ移送ヘッド１６には
、チップピックアップコレット１７、チップスクラブコ
レット１８、テープ吸着ノズル１９が一定間隔で取付け
られている・また、２０は拡大リング、２１は実体顕微
鏡、２２はＡｕ−Ｓｉテープカッター、２３はパルスモ
ータ、２４はＸ−Ｙテーブルである。In FIGS. 1(a), (b) and 2, the apparatus of the present invention includes a workpiece transfer section 11, a chip transfer head 16, and a Y-Z
It is composed of a head lifter cylinder 12 that is displaced in the direction, a tip position correction section 13, and a scrub heater 14. The workpiece conveyance section 11 is driven in the X-Z direction using the shafts of two air cylinders, scoops up the package from the lower part of the heater block 15, conveys it, and places it on the next heater block 15. A chip pickup collet 17, a chip scrubbing collet 18, and a tape suction nozzle 19 are attached to the chip transfer head 16 at regular intervals. Also, 20 is a magnifying ring, 21 is a stereo microscope, 22 is an Au-Si tape cutter, 23 is a pulse motor, and 24 is an XY table.

第１実施例の動作を説明する。拡大リング２０上のチッ
プを実体顕微鏡２１の接眼レンズ内のへアーラインに目
合せする。パッケージをワーク搬送部１１のアンローダ
−にセットしスタートボタンを押すと、ワーク搬送部１
１が動作し、パッケージを次段のヒーターブロック１５
に移送する。順次パッケージをアンローダ−にセットす
る。充分加熱されたパッケージがスクラブヒーター１４
１でワーク搬送されてくると、ヘッドリフターシリンダ
ー１２が動作して下降し、Ａｕ−Ｓｉテープカッター２
２のステージからテープ吸着ノズル１９がＡｕ−８ｔテ
ープを吸着して上昇する。次にＹ軸のヘッドリフターシ
リンダー１２が動作し、第１図（ａ）で左方向に移動し
、次にＺ軸のヘッドリフターシリンダー１２が下降し拡
大リング２０及びチップ位置修正部１３のチップを吸着
すると共に、パッケージのキャピテイ部にテープ吸着ノ
ズル１９に吸着されたＡｕ−８ｉロウ材を供給する。The operation of the first embodiment will be explained. The tip on the magnifying ring 20 is aligned with the hairline in the eyepiece of the stereomicroscope 21. When the package is set on the unloader of the workpiece transport section 11 and the start button is pressed, the workpiece transport section 1
1 operates and the package is transferred to the next heater block 15.
Transfer to. Set the packages on the unloader one by one. A sufficiently heated package is placed in the scrub heater 14.
When the workpiece is conveyed at step 1, the head lifter cylinder 12 is operated and lowered, and the Au-Si tape cutter 2 is moved.
From stage 2, the tape suction nozzle 19 suctions the Au-8t tape and ascends. Next, the Y-axis head lifter cylinder 12 operates and moves to the left in FIG. At the same time, the Au-8i brazing material adsorbed by the tape suction nozzle 19 is supplied to the capy part of the package.

次にチップ移送ヘッド１６は、チップ位置修正部のチッ
プと拡大リング２０のチップを吸着後上昇し第１図（ａ
）で右方向に移動し、チップピックアップコレット１７
、チップスクラブコレット１８に吸着されたチップを各
々チップ位置修正部１３、スクラブヒーター１４上のパ
ッケージのキャビティに下降し、前記パッケージのキャ
ビティのＡｕ−８ｔロウ材とチップ裏面が平行に接触さ
れる。この状態で数秒間待機後、スクラブヒーター１４
カパルスモーター２３によりＸ−Ｙテーブルあを介して
スクラブされる。Next, the chip transfer head 16 adsorbs the chip in the chip position correction unit and the chip in the enlargement ring 20, and then moves upwards as shown in FIG. 1(a).
) to move the chip pickup collet 17 to the right.
The chips adsorbed by the chip scrub collet 18 are lowered into the cavity of the package above the chip position correction unit 13 and the scrub heater 14, respectively, and the back surface of the chip is brought into contact with the Au-8t brazing material in the cavity of the package in parallel. After waiting for a few seconds in this state, the scrub heater 14
Scrub is performed by the coupler motor 23 via the XY table.

コノ状態でＮ２ホットガス（図示せず）で酸化防止され
たスクラブ部はＡｕ−８ｔロウ材とチップＳｔが加圧接
触されており、しかもＡｕ−８ｉ共共晶塵以上に加熱さ
れている状態でスクラブされるから、チップ裏面からＳ
ｔがＡｕ−８ｉロウ材に拡散し、パンケージキャビティ
とチップ裏面間にはＡｕ−８ｔ共晶合金　　　′が生成
されて固着される。In the scrubbed state, which is protected from oxidation by N2 hot gas (not shown), the Au-8t brazing material and the chip St are in pressure contact and are heated to a temperature higher than that of the Au-8i eutectic dust. Since it will be scrubbed with S from the back of the chip.
t diffuses into the Au-8i brazing material, and an Au-8t eutectic alloy is formed and fixed between the pancage cavity and the back surface of the chip.

次に第２図に示す本発明の第２実施例について述べる。Next, a second embodiment of the present invention shown in FIG. 2 will be described.

第２図は、第１実施例に示すチップピックアップコレッ
ト、チップスクラブコレット、チップ位置修正部、Ａｕ
−８ｔテ一プ吸着ノズル及びん−Ｓｉテープカツター等
を複数個設けることによってチップのスクラブが同時に
複数処理が可能となり、作業処理の効率化及びフロア面
積の減少が計られ高価なりリーンルームの有効活用がで
きるようにしたものである。すなわち第２図において、
チップ移送ヘッド１６にはチップピックアップコレット
１７、チップスクラブコレット１８、Ａｕ−８ｉテ一プ
吸着ノズル１９が並列に２個ずつ取付けられている。FIG. 2 shows a chip pickup collet, a chip scrub collet, a chip position correction unit, and an Au
- By installing multiple 8t tape suction nozzles and -Si tape cutters, it is possible to scrub multiple chips at the same time, improving work processing efficiency and reducing floor space, making efficient use of expensive lean rooms. It was made so that it could be done. That is, in Figure 2,
Two chip pickup collets 17, two chip scrub collets 18, and two Au-8i tape suction nozzles 19 are attached to the chip transfer head 16 in parallel.

又、チップ位置修正部１３、拡大リング２０、Ａｕ−Ｓ
ｉテープカッター２２も２個並列に設ける。又、ワーク
搬送部は送りピッチを２倍にしてパッケージ２個分を同
時にスクラブヒーター１４に送る構造とする。スクラブ
ヒーター１４はパルスモータ−２３により動作するＸ−
Ｙスクラブテーブル２４の上に取付けられており、Ｘ、
Ｙ方向に自在にスクラブ可能となる。全体の動作状態は
第１実施例と全く同様である。本構造の複数のパッケー
ジに対して複数のチップを同時にスクラブするには一対
のパルスモータにてＸ−Ｙテーブル２４ヲ駆動してスク
ラブヒーター１４及びヒーターブロック１５をＸ、Ｙ方
向に移動させて行なう。このスクラブ時で最も大切な事
は、ヒーターブロックとコレットの先端が平行であるこ
とである。この状態にすれば、チップとパッケージキャ
ピテイは問題なく接着可能である。又、Ａｕ−Ｓｉテー
プカッター１２、チップ位置修正部３は１個の駆動部で
動作させる構造は可能である。又、ピックアップコレッ
ト７に対する拡大り゛フグ２０上のチップの位置決めは
、自動位置決め装置を用いることが望ましいが、簡便な
方法として拡大リング２０の代りにチップトレーにチッ
プを乗せ換えたチップトレーを一定送りのノツチングレ
バーでＸ−Ｙに移動することによってチップピックアッ
プコレット７の位置とチップの位置を合致させる方法も
考えられる。更に第１．第２実例共にパッケージの搬送
、ヘッドリフター、チップ吸着ヘッドの駆動はエアーシ
リンダー、Ａｕ−Ｓｉテープカッター及びスクラブには
パルスモータ−を使用したためにワーク搬送及びチップ
位置が正確で再現性が良くなまた。スクラブ時のチップ
吸着位置はチップ位置修正部で修正するので、コレット
吸着時のキズ付けがなくなり、スクラブもパッケージ側
をスクラブするためにパッケージとの平行度が良くなｆ
）　Ａｕ−８ｔ合金の濡れ性が良くなり、生産歩留が向
上した。In addition, the chip position correction unit 13, the enlargement ring 20, the Au-S
Two i-tape cutters 22 are also provided in parallel. Further, the workpiece conveyance section has a structure in which the feed pitch is doubled and two packages are simultaneously fed to the scrub heater 14. The scrub heater 14 is operated by a pulse motor 23.
It is installed on the Y scrub table 24, and
It becomes possible to freely scrub in the Y direction. The overall operating condition is exactly the same as the first embodiment. To simultaneously scrub multiple chips on multiple packages of this structure, a pair of pulse motors drive the X-Y table 24 to move the scrub heater 14 and heater block 15 in the X and Y directions. . The most important thing during this scrubbing is that the heater block and the tip of the collet are parallel. In this state, the chip and the package cavity can be bonded together without any problem. Furthermore, a structure in which the Au-Si tape cutter 12 and the chip position correction section 3 are operated by one driving section is possible. Although it is preferable to use an automatic positioning device to position the chip on the enlarged puffer ring 20 with respect to the pickup collet 7, a simple method is to use a chip tray in which chips are placed on a chip tray instead of the enlarged ring 20. Another possible method is to match the position of the chip pickup collet 7 with the position of the chip by moving it in the X-Y direction using a notching lever for feeding. Furthermore, the first. In the second example, an air cylinder was used to transport the package, drive the head lifter, and the chip suction head, and a pulse motor was used for the Au-Si tape cutter and scrubber, so the workpiece transport and chip position were accurate and had good reproducibility. . Since the chip suction position during scrubbing is corrected by the chip position correction unit, there is no scratching when the collet is suctioned, and since the scrubbing is also scrubbing the package side, the parallelism with the package is improved.
) The wettability of the Au-8t alloy has improved and the production yield has improved.

〔発明の効果〕〔Effect of the invention〕

本発明は以上説明したように、上下、左右動するチップ
吸着ヘッドにチップピックアップコレット、チップスク
ラブコレット、テープ吸着ノズルを備えるとともに、チ
ップ位置修正部を設け、パッケージをスクラブすること
によってチップをダイボンド処理するようにしたため、
カム形状による制御と比べてチップ吸着と停止位置精度
の再現性、スクラブ時のパッケージキャビティとの平行
度等を改善することができるばかりでなく、小型から大
型のチップまでダイボンドすることができ、したがって
品質を大巾に向上して生産歩留を向上できる効果を有す
るものである。As explained above, the present invention is equipped with a chip pickup collet, a chip scrubbing collet, and a tape suction nozzle in a chip suction head that moves vertically and horizontally, and is also provided with a chip position correction section to perform die-bonding processing on the chips by scrubbing the package. Because I made it so that
Compared to control using cam shape, it is not only possible to improve the reproducibility of chip adsorption and stop position accuracy, the parallelism with the package cavity during scrubbing, etc., but also it is possible to die bond from small to large chips. This has the effect of greatly improving quality and improving production yield.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図（ａ）は本発明の第１実施例を示す側面図、（ｂ
）は同平面図、第２図は本発明の第２実施例を示す斜視
図、第３図（ａ）は従来のダイボンダーを示す側面図、
（ｂ）はスクラブ状態を示す斜視図である。 １・・・セラミックパッケージ、２・・・ダイボンド部
、３・・・Ａｕ−８ｔロウ材、４・・・ヒーターブロッ
ク、５・・・拡大リング、６・・・プラスチックフィル
ム、７・・・半導体チップ、８・・・コレットホルダー
、９・・・コレット、１１・・・ワーク搬送部、１２・
・・ヘッドリフターシリンダー、１３・・・チップ位置
修正部、１４・・・スクラブヒーター、１５・・・ヒー
ターブロック、１６・・・チップ移送ヘッド、１７・・
・チップピックアップコレット、１８・・・チップスク
ラブコレット、１９・・・テープ吸着ノズル、２０・・
・拡大リング、２１・・・実体顕微鏡、２２・・・勤−
８ｚテープカツター、ｎ・・・パルスモータ−１２４・
・・Ｘ−Ｙテーブル 、覧FIG. 1(a) is a side view showing the first embodiment of the present invention, and FIG. 1(b) is a side view showing the first embodiment of the present invention.
) is a plan view of the same, FIG. 2 is a perspective view showing a second embodiment of the present invention, and FIG. 3(a) is a side view showing a conventional die bonder.
(b) is a perspective view showing a scrubbing state. DESCRIPTION OF SYMBOLS 1...Ceramic package, 2...Die bond part, 3...Au-8t brazing material, 4...Heater block, 5...Enlargement ring, 6...Plastic film, 7...Semiconductor Chip, 8... Collet holder, 9... Collet, 11... Workpiece conveyance section, 12.
... Head lifter cylinder, 13... Chip position correction unit, 14... Scrub heater, 15... Heater block, 16... Chip transfer head, 17...
・Chip pickup collet, 18... Chip scrub collet, 19... Tape suction nozzle, 20...
・Magnifying ring, 21... Stereo microscope, 22... Work-
8z tape cutter, n...pulse motor-124.
・・View X-Y table

Claims (1)

【特許請求の範囲】[Claims] （１）パッケージにシリコンチップを固着するダイボン
ダーにおいて、ワーク搬送部、Ａｕ−Ｓｉテープカッタ
ー、チップ位置修正部、チップ目合せ部、スクラブヒー
ター、チップスクラブコレット、チップピックアップコ
レット、テープ吸着ノズルを有し、二軸方向に反復運動
するチップ移送ヘッドにチップピックアップコレット、
チップスクラブコレット、テープ吸着ノズルを一定間隔
で取付け、更にチップ移送ヘッドに相対する位置に拡大
リング、チップ位置修正部、スクラブヒーター、Ａｕ−
Ｓｉテープカッターを一定間隔で設け、目合せ済チップ
の吸着、チップ位置修正部のチップ吸着、Ａｕ−Ｓｉテ
ープの吸着スクラブ等の動作がチップ移送ヘッドの一連
動作により行われるようにしたことを特徴とするダイボ
ンダー。(1) A die bonder that fixes silicon chips to a package includes a workpiece conveyance section, an Au-Si tape cutter, a chip position correction section, a chip alignment section, a scrub heater, a chip scrub collet, a chip pickup collet, and a tape suction nozzle. , a chip pickup collet on a chip transfer head that repeatedly moves in biaxial directions,
Chip scrub collets and tape suction nozzles are installed at regular intervals, and an enlargement ring, chip position correction unit, scrub heater, and Au-
The feature is that Si tape cutters are provided at regular intervals, and operations such as adsorption of aligned chips, adsorption of chips in the chip position correction section, adsorption scrubbing of Au-Si tape, etc. are performed by a series of operations of the chip transfer head. die bonder.
JP23447584A 1984-11-07 1984-11-07 Die bonder Pending JPS61112336A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23447584A JPS61112336A (en) 1984-11-07 1984-11-07 Die bonder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23447584A JPS61112336A (en) 1984-11-07 1984-11-07 Die bonder

Publications (1)

Publication Number Publication Date
JPS61112336A true JPS61112336A (en) 1986-05-30

Family

ID=16971594

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23447584A Pending JPS61112336A (en) 1984-11-07 1984-11-07 Die bonder

Country Status (1)

Country Link
JP (1) JPS61112336A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2693465A1 (en) * 2012-07-31 2014-02-05 Nxp B.V. Electronic device and method of manufacturing such device
CN110773832A (en) * 2019-10-31 2020-02-11 中国科学院电子学研究所 Eutectic welding device and application thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55165643A (en) * 1979-06-12 1980-12-24 Fujitsu Ltd Device for bonding pellet
JPS5776849A (en) * 1980-10-31 1982-05-14 Toshiba Corp Bonding device for semiconductor pellel

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55165643A (en) * 1979-06-12 1980-12-24 Fujitsu Ltd Device for bonding pellet
JPS5776849A (en) * 1980-10-31 1982-05-14 Toshiba Corp Bonding device for semiconductor pellel

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2693465A1 (en) * 2012-07-31 2014-02-05 Nxp B.V. Electronic device and method of manufacturing such device
CN110773832A (en) * 2019-10-31 2020-02-11 中国科学院电子学研究所 Eutectic welding device and application thereof
CN110773832B (en) * 2019-10-31 2021-03-23 中国科学院电子学研究所 Eutectic welding device and application thereof

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