JPS61102787A - Light emitting semiconductor device - Google Patents
Light emitting semiconductor deviceInfo
- Publication number
- JPS61102787A JPS61102787A JP59226347A JP22634784A JPS61102787A JP S61102787 A JPS61102787 A JP S61102787A JP 59226347 A JP59226347 A JP 59226347A JP 22634784 A JP22634784 A JP 22634784A JP S61102787 A JPS61102787 A JP S61102787A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- groove
- grooves
- size
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 230000002093 peripheral effect Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 230000004927 fusion Effects 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 241000287531 Psittacidae Species 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、保持体（以後サブマウントと記す）を有する
発光半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a light emitting semiconductor device having a holder (hereinafter referred to as a submount).
従来の技術
従来、この種のサブマウントは第２図の断面図に示すよ
うな平坦なものであった。第２図において、１はシリコ
ン、２は絶縁膜である二酸化硅素、３は融着材としての
スズであり、これらをもってサブマウントを閘成し、こ
の上に発光半導体をｐ型極性蛋唖４の側を下にして取り
付ける。なお、発光半導体は、ｐ復極性電極４上にｐ型
エピタキシャル層５．ｎ型エピタキシャル層６．ｎ型基
板７およびｎ型極性電極８をそなえ、通常いわゆるアッ
プサイドダウン形式で組み込まれる場合が多い。BACKGROUND OF THE INVENTION Conventionally, submounts of this type have been flat, as shown in the cross-sectional view of FIG. In Fig. 2, 1 is silicon, 2 is silicon dioxide which is an insulating film, and 3 is tin as a fusion material.These are used to form a submount, and a light emitting semiconductor is placed on top of this by p-type polar film 4. Install it with the side facing down. Note that the light emitting semiconductor has a p-type epitaxial layer 5. on the p-dipolar electrode 4. n-type epitaxial layer6. It is provided with an n-type substrate 7 and an n-type polar electrode 8, and is usually assembled in a so-called upside-down format in many cases.
発明が解決しようとする問題点
このようなサブマウントを有する発光半導体装置、例え
ば、発光ダイオードや半導体レーザーはブフイバーを用
いた光通信用の光源に用いられることが多く、熱放散の
ため最も発熱の大きい部分であるｐｎ接合をサブマウン
ト側に近くした、いわゆるアンプサイドダウン（Ｕｐｓ
ｉｄｅ −ｄｏｗｎ ） 構造が一般的であるが、サブ
マウントの界面からｐｎ接合までは数ミクロン−数十ミ
クロン程度であり、第２図に示されるように従来の平坦
なサブマウントでは発光装置を接着した際、融着材３が
発光装置の側面に吸い上がって、ｐｎ接合部分が短絡状
態になりやすい。Problems to be Solved by the Invention Light-emitting semiconductor devices having such submounts, such as light-emitting diodes and semiconductor lasers, are often used as light sources for optical communication using fiber optics, and because of heat dissipation, they produce the most heat. The so-called amplifier side-down (Ups
ide-down) structure is common, but the distance from the submount interface to the pn junction is about several microns to several tens of microns, and as shown in Figure 2, in the conventional flat submount, the light emitting device cannot be glued. When this happens, the fusing material 3 is likely to be sucked up to the side surface of the light emitting device, causing the pn junction to become short-circuited.
また、放射した光を効率よくファイバーに入射するため
には発光装置を精密に設置しなければならず、従来のサ
ブマウントでは位置合わせが困難であった。Furthermore, in order to efficiently input the emitted light into the fiber, the light emitting device must be precisely installed, and alignment is difficult with conventional submounts.
本発明は、このような問題点を解決するもので融着材の
吸い上がりを防止すると共に、発光装置を設置する際の
位置合わせの目印とすることを目的とするものである。The present invention is intended to solve these problems, and aims to prevent the fusion material from being sucked up and to provide a mark for positioning when installing a light emitting device.
問題点を解決するだめの手段
本発明は、サブマウントの表面に溝を形成し、溝に囲ま
れた凸部が発光装置の面積より小さく、１だ溝の外周部
が発光装置の外形形状よりも大きくしたものである。Means to Solve the Problems The present invention forms a groove on the surface of the submount, the convex portion surrounded by the groove is smaller in area than the light emitting device, and the outer circumference of the groove is smaller than the external shape of the light emitting device. It is also enlarged.
作用
本発明の構成によると、サブマウントに設けらＦｌ、た
溝に囲まれた凸部を発光装置の面積より小さくすること
忙より、発光装置を接着した際に、溶融した融着材が発
光装置の側面に吸い上がることを防ぐ。また、溝の外周
部を発光半導体の外形形状より大きくすることでその溝
の段差を発光半導体の組み込みの際の位置合わせの目印
にすることができ、高精度に組み立て可能である。According to the configuration of the present invention, since the convex portion surrounded by the groove provided on the submount is made smaller than the area of the light emitting device, the molten adhesive material emit light when the light emitting device is bonded. Prevent it from wicking up to the sides of the device. Furthermore, by making the outer circumferential portion of the groove larger than the external shape of the light emitting semiconductor, the step of the groove can be used as a positioning mark when assembling the light emitting semiconductor, allowing highly accurate assembly.
実施例
第１図は本発明の一実施例によるサブマウントの断面図
である。また、この実施例装置の各構成要素１〜８は、
従来例のものと同じである。この実施例装置では、サブ
マウントの表面に溝９を設けている。Embodiment FIG. 1 is a sectional view of a submount according to an embodiment of the present invention. In addition, each component 1 to 8 of this embodiment device is as follows:
This is the same as that of the conventional example. In this example device, a groove 9 is provided on the surface of the submount.
１ず、７リコン基板１の表面に弗硝酸系エツチング液を
用い、通常の写真食刻法により、４〜６ミクロン程度の
深さの溝９を形成する。溝９の幅は６０ミクロンで溝に
囲まれた凸部は
０．４４ｍＸ０．４４１１Ｂ、溝９の外周部は０．６６
ｆｌＸ０．５８０である。発光ダイオードの大きさｏ、
５ｕｘｏ、ｓｕに対し、溝９に囲まれた凸部はこれより
小さく、まだ溝の外周部はこれより大きいような溝を形
成している。ついでシリコン１を１ｏＯＱ℃以上に加熱
して二酸化硅素膜２を５０００Ａ程度形成した後、表面
に融着材であるスズを２ミクロン程度蒸着する。このよ
うにして作製したサブマウント（大きさ１．０騙×１．
０鵡）の中央の凸部に溝９の外周部の段差を位置合わせ
の目印として発光ダイオードを２４０℃程度の処理温度
で融着する。1. First, grooves 9 having a depth of about 4 to 6 microns are formed on the surface of the 7-recon substrate 1 by using a fluoronitric acid etching solution and by ordinary photolithography. The width of the groove 9 is 60 microns, the convex portion surrounded by the groove is 0.44 m x 0.4411B, and the outer circumference of the groove 9 is 0.66 mm.
flX0.580. The size of the light emitting diode o,
5uxo and su, the convex portion surrounded by the groove 9 is smaller, and the outer periphery of the groove is still larger. Next, the silicon 1 is heated to 100Q° C. or more to form a silicon dioxide film 2 of about 5000 A, and then tin, which is a fusion material, is vapor-deposited on the surface to a thickness of about 2 microns. The submount produced in this way (size 1.0 x 1.
A light-emitting diode is fused to the central convex portion of the 0.0-inch (parrot) at a processing temperature of about 240° C. using the step on the outer periphery of the groove 9 as a positioning mark.
発明の効果
本発明によれば、周辺に溝を配設したことによりサブマ
ウントの融着材が発光装置の側面に吸い上がることなく
、また発光装置の際の位置合わせが容易にできる。Effects of the Invention According to the present invention, by providing the groove around the periphery, the fusing material of the submount does not get sucked up to the side surface of the light emitting device, and the positioning of the light emitting device can be easily performed.
第１図は本発明の一実施例装置の断面図、第２図は従来
例装置の断面図である。
１・・・・・・シリコン、２・・・・・・二酸化硅素、
３・・・・・・スズ、４・・・・・・ｐＨｌｌｌ電極、
５・・・・・・ｐ型エピタキシャル層、６・・・・・ｎ
型エピタキシャル層、７・・・・・・ｎ型基反、８・・
・・・・ｎ側電極、９・・・・・・溝。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
第２図FIG. 1 is a sectional view of a device according to an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional device. 1...Silicon, 2...Silicon dioxide,
3...Tin, 4...pHllll electrode,
5...p-type epitaxial layer, 6...n
Type epitaxial layer, 7...N-type base layer, 8...
...N-side electrode, 9...groove. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2
Claims (1)
溝に囲まれた凸部が前記発光半導体の接着面積より小さ
く、かつ、前記溝の外周部が前記発光半導体の外形形状
よりも大きいことを特徴とする発光半導体装置。A groove is formed on the surface of a holder on which a light emitting semiconductor is mounted, and a convex portion surrounded by the groove is smaller than an adhesion area of the light emitting semiconductor, and an outer peripheral part of the groove is larger than the outer shape of the light emitting semiconductor. A light emitting semiconductor device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59226347A JPS61102787A (en) | 1984-10-26 | 1984-10-26 | Light emitting semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59226347A JPS61102787A (en) | 1984-10-26 | 1984-10-26 | Light emitting semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61102787A true JPS61102787A (en) | 1986-05-21 |
Family
ID=16843738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59226347A Pending JPS61102787A (en) | 1984-10-26 | 1984-10-26 | Light emitting semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61102787A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0661786A2 (en) * | 1993-11-22 | 1995-07-05 | Xerox Corporation | Laser diode arrays with close beam offsets |
| JP2001168444A (en) * | 1999-12-09 | 2001-06-22 | Sony Corp | Semiconductor light emitting element, and manufacturing method installation substrate therefor |
| JP2004221598A (en) * | 2003-01-16 | 2004-08-05 | Lumileds Lighting Us Llc | Accurate alignment for led assembly |
| KR100887713B1 (en) | 2007-11-08 | 2009-03-12 | 서울반도체 주식회사 | Light emitting device |
| JP2009054897A (en) * | 2007-08-28 | 2009-03-12 | Panasonic Electric Works Co Ltd | Light emitting device |
| JP2013138043A (en) * | 2011-12-28 | 2013-07-11 | Nichia Chem Ind Ltd | Method for mounting light-emitting element |
| US8664674B2 (en) | 2007-08-28 | 2014-03-04 | Panasonic Corporation | Light emitting diode device preventing short circuiting between adjacent light emitting diode chips |
| JP2015500562A (en) * | 2011-11-18 | 2015-01-05 | ルクスビュー テクノロジー コーポレイション | Micro light emitting diode |
| US9620478B2 (en) | 2011-11-18 | 2017-04-11 | Apple Inc. | Method of fabricating a micro device transfer head |
| US9831383B2 (en) | 2011-11-18 | 2017-11-28 | Apple Inc. | LED array |
| US10121864B2 (en) | 2011-11-18 | 2018-11-06 | Apple Inc. | Micro device transfer head heater assembly and method of transferring a micro device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5451477A (en) * | 1977-09-30 | 1979-04-23 | Hitachi Ltd | Mounting method of semiconductor chip |
| JPS54105965A (en) * | 1978-02-07 | 1979-08-20 | Mitsubishi Electric Corp | Semiconductor device |
| JPS5747059B2 (en) * | 1974-05-18 | 1982-10-07 | ||
| JPS5979588A (en) * | 1982-10-29 | 1984-05-08 | Hitachi Ltd | Light emitting semiconductor device |
| JPS6167970A (en) * | 1984-09-11 | 1986-04-08 | Oki Electric Ind Co Ltd | Structure for attaching parts |
-
1984
- 1984-10-26 JP JP59226347A patent/JPS61102787A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5747059B2 (en) * | 1974-05-18 | 1982-10-07 | ||
| JPS5451477A (en) * | 1977-09-30 | 1979-04-23 | Hitachi Ltd | Mounting method of semiconductor chip |
| JPS54105965A (en) * | 1978-02-07 | 1979-08-20 | Mitsubishi Electric Corp | Semiconductor device |
| JPS5979588A (en) * | 1982-10-29 | 1984-05-08 | Hitachi Ltd | Light emitting semiconductor device |
| JPS6167970A (en) * | 1984-09-11 | 1986-04-08 | Oki Electric Ind Co Ltd | Structure for attaching parts |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0661786A2 (en) * | 1993-11-22 | 1995-07-05 | Xerox Corporation | Laser diode arrays with close beam offsets |
| EP0661786A3 (en) * | 1993-11-22 | 1995-10-18 | Xerox Corp | Laser diode arrays with close beam offsets. |
| US5631918A (en) * | 1993-11-22 | 1997-05-20 | Xerox Corporation | Laser diode arrays with close beam offsets |
| JP2001168444A (en) * | 1999-12-09 | 2001-06-22 | Sony Corp | Semiconductor light emitting element, and manufacturing method installation substrate therefor |
| JP2004221598A (en) * | 2003-01-16 | 2004-08-05 | Lumileds Lighting Us Llc | Accurate alignment for led assembly |
| US8664674B2 (en) | 2007-08-28 | 2014-03-04 | Panasonic Corporation | Light emitting diode device preventing short circuiting between adjacent light emitting diode chips |
| JP2009054897A (en) * | 2007-08-28 | 2009-03-12 | Panasonic Electric Works Co Ltd | Light emitting device |
| KR100887713B1 (en) | 2007-11-08 | 2009-03-12 | 서울반도체 주식회사 | Light emitting device |
| JP2015500562A (en) * | 2011-11-18 | 2015-01-05 | ルクスビュー テクノロジー コーポレイション | Micro light emitting diode |
| US9620478B2 (en) | 2011-11-18 | 2017-04-11 | Apple Inc. | Method of fabricating a micro device transfer head |
| US9831383B2 (en) | 2011-11-18 | 2017-11-28 | Apple Inc. | LED array |
| US10121864B2 (en) | 2011-11-18 | 2018-11-06 | Apple Inc. | Micro device transfer head heater assembly and method of transferring a micro device |
| US10297712B2 (en) | 2011-11-18 | 2019-05-21 | Apple Inc. | Micro LED display |
| US10607961B2 (en) | 2011-11-18 | 2020-03-31 | Apple Inc. | Micro device transfer head heater assembly and method of transferring a micro device |
| US11552046B2 (en) | 2011-11-18 | 2023-01-10 | Apple Inc. | Micro device transfer head assembly |
| JP2013138043A (en) * | 2011-12-28 | 2013-07-11 | Nichia Chem Ind Ltd | Method for mounting light-emitting element |
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