JPS61100929A - Projection-type semiconductor exposing equipment - Google Patents
Projection-type semiconductor exposing equipmentInfo
- Publication number
- JPS61100929A JPS61100929A JP59221143A JP22114384A JPS61100929A JP S61100929 A JPS61100929 A JP S61100929A JP 59221143 A JP59221143 A JP 59221143A JP 22114384 A JP22114384 A JP 22114384A JP S61100929 A JPS61100929 A JP S61100929A
- Authority
- JP
- Japan
- Prior art keywords
- space
- fluid
- heater
- projection
- optical system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 230000003287 optical effect Effects 0.000 claims abstract description 24
- 239000012530 fluid Substances 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 238000005286 illumination Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Epidemiology (AREA)
- Environmental & Geological Engineering (AREA)
- Toxicology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の利用分野］
本発明は投影型半導体露光装置に関し、持にそのディス
トーション補正のための手段を備えたミラー或いはレン
ズ投影系を有する半導体露光装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a projection type semiconductor exposure apparatus, and more particularly to a semiconductor exposure apparatus having a mirror or lens projection system equipped with means for correcting distortion.
［従来の技術］
ＩＣやＬＳＩなどの半導体装置の製造に用いられる投影
型半導体露光装置は、レチクルまたはマスクなどの原版
のパターンを像平面上の半導体ウ ゛エバ表面に
結像させるために、凹凸の球面鏡を含むミラー系或いは
レンズ系からなる投影光学系を有しており、この投影光
学系まわりが熱の影響を受けないように様々な対策を施
している。とりわけ投影光学系内から像平面までの光路
内における雰囲気（空気等）のＩＣ乱は有害なものとさ
れ、光路に沿った系内空間の温度分布の偏よりを極力減
らしたり、雰囲気ガスとしてヘリウム等の拡散係数の大
きな媒質を用いたり、空間の温度分布を均一化したり、
雰囲気ガスを乱して密度を均一化したり、系内空間を真
空に１こりしＣいた。[Prior Art] Projection-type semiconductor exposure equipment used in the manufacture of semiconductor devices such as ICs and LSIs uses an uneven surface to image a pattern of an original such as a reticle or mask onto the surface of a semiconductor wafer on an image plane. It has a projection optical system consisting of a mirror system or a lens system including a spherical mirror, and various measures are taken to prevent the area around this projection optical system from being affected by heat. In particular, IC disturbances in the atmosphere (air, etc.) in the optical path from the projection optical system to the image plane are considered to be harmful. By using a medium with a large diffusion coefficient such as, making the temperature distribution in the space uniform,
The atmospheric gas was disturbed to make the density uniform, and the space inside the system was evacuated.
〔発明の目的と概要］
本発明で解決すべき問題点は、従来は有害とされていた
系内空間の温度分布の偏よりをむしろ積極的に利用して
、投影光学系のディストーション補正を行なうことので
きる投影型半導体露光装置を提供することにある。[Objective and Summary of the Invention] The problem to be solved by the present invention is to correct the distortion of the projection optical system by actively utilizing the unevenness of the temperature distribution in the space within the system, which was conventionally considered to be harmful. The object of the present invention is to provide a projection type semiconductor exposure apparatus that can perform the following steps.
この目的は本発明によって達成され、それによれば本発
明の投影型半導体露光装置では、投影光学系内から像平
面までの間の光路吊に流体で満たされた空間を配置して
、この空間内の流体に温度変化を与える手段を設け、流
体に温度変化を与えることで流体の光の屈折率を積極的
に変えるようにし、これによって投影光学系のディスト
ーションの補正を果し得るようにしである。This object is achieved by the present invention, and according to the present invention, in the projection type semiconductor exposure apparatus of the present invention, a space filled with a fluid is disposed in the optical path between the inside of the projection optical system and the image plane. A means for applying a temperature change to the fluid is provided, and by applying a temperature change to the fluid, the refractive index of light in the fluid is actively changed, thereby making it possible to correct distortion of the projection optical system. .
空間内の流体は、空気をはじめとする各種ガスまたは透
明な液体であり、この空間内の流体に温度変化を与える
手段は、加熱ヒータを含むもの、加温または冷却流体を
前記空間に送給するもの、或いは加熱用の光を前記空間
に照射するもの等々であり、また加熱用の光を投影光学
系を介して前記空間内に照射するようにしたものも本発
明の態様のひとつに含まれる。The fluid in the space is various gases including air or transparent liquid, and the means for changing the temperature of the fluid in this space includes a heater, and a means for supplying heating or cooling fluid to the space. or irradiates heating light into the space, etc. Also, an embodiment of the present invention includes one in which heating light is irradiated into the space via a projection optical system. It will be done.
前記空間内の流体を加温または冷却することによって光
路に沿った系内空間に温度分布が生じ、これによって光
路内の一部の空間で流体の光の屈折率に変化を生じる。By heating or cooling the fluid in the space, a temperature distribution is generated in the system space along the optical path, which causes a change in the optical refractive index of the fluid in some spaces within the optical path.
この屈折率の変化の程度は一流体の加温または冷却の程
度を調整することによって制ｍ８れ、これにより投影光
学系の誤差等に因る像平面でのわずかなディストーショ
ンの補正が達成される。The degree of this change in refractive index is controlled by adjusting the degree of heating or cooling of the fluid, thereby achieving correction of slight distortion at the image plane due to errors in the projection optical system, etc. .
本発明の実施例を示せば以下の通りである。Examples of the present invention are as follows.
［発明の実施例］
第１図↓よ本発明の第１実施例を示し、照明光源１から
の光で照明されたレチクル２の像を、投影レンズ３によ
ってウェハ４上に結像させている。[Embodiment of the Invention] Figure 1↓ shows a first embodiment of the present invention, in which an image of a reticle 2 illuminated with light from an illumination light source 1 is formed on a wafer 4 by a projection lens 3. .
レンズ３とウェハ４との間の空間５は空気で満たされて
おり、この空間５内にはヒータ６が指し向けられている
。ヒータ６はコントローラ７によって加熱制！ｌＩされ
、空間５内の空気を所望のように加温づる。尚、空間５
は例えば図示しない鏡筒などによって囲まれていて良く
、それによりヒータ６による加温の効果が向上する。A space 5 between the lens 3 and the wafer 4 is filled with air, into which a heater 6 is directed. The heater 6 is heated by the controller 7! 1I to heat the air in space 5 as desired. Furthermore, space 5
may be surrounded by, for example, a lens barrel (not shown), thereby improving the heating effect of the heater 6.
ヒータ６によって加温された空層５内の空気はそこに温
度分布の偏りを生じ、レチクル２の像２′の結像位置関
係をずらすことが可能となる。The air in the empty layer 5 heated by the heater 6 causes a bias in temperature distribution therein, making it possible to shift the imaging positional relationship of the image 2' of the reticle 2.
ヒータ６の配置位置は調整できるようにしておくのが好
ましく、投影光学系のディストーションの内容に応じて
予じめ適正補正位置に調整する。The arrangement position of the heater 6 is preferably adjustable, and is adjusted in advance to an appropriate correction position depending on the content of distortion in the projection optical system.
第２図は本発明の第２実施例を示し、空間５内の空気の
温度変化は空気温度調節装置８から送給される加温また
は冷却空気流９によって果されるようになっている。FIG. 2 shows a second embodiment of the invention, in which the temperature change of the air in the space 5 is effected by a heating or cooling air stream 9 delivered by an air temperature conditioning device 8.
第３図は本発明の第３実施例を示し、制御装置１０でｔ
ｉｌ制御された加熱用の例えば赤外光源１１からの加熱
光がレンズ１２によって空間５内に照射され、好ましく
は空間５内の所望の点に集光されるようになっている。FIG. 3 shows a third embodiment of the present invention, in which the control device 10
Heating light from, for example, an infrared light source 11 for ill-controlled heating is irradiated into the space 5 by a lens 12, and is preferably focused on a desired point within the space 5.
第４図は本発明の第４実施例を示し、赤外光源１１から
の加熱光が投影レンズ３を介して空間５内に照射されて
おり、この場合、光源１１の位置を変えることにより加
熱光の空間５内での集光位置が調整可、能である。FIG. 4 shows a fourth embodiment of the present invention, in which heating light from an infrared light source 11 is irradiated into a space 5 through a projection lens 3. In this case, heating light can be heated by changing the position of the light source 11. The light collection position within the light space 5 can be adjusted.
尚、第３および第４実施例において、加熱用の光源光と
して照明光源１からの照明光の一部のエネルギーを利用
するように光学系を組むことも容易である。In the third and fourth embodiments, it is also easy to construct an optical system so as to utilize part of the energy of the illumination light from the illumination light source 1 as the heating light source.
また空間５内は空気で満たされている例を示したが、空
気以外に他の気体或いは透明な液体で満たしてもよいこ
とは述べるまでもない。Further, although an example has been shown in which the space 5 is filled with air, it goes without saying that it may be filled with other gases or transparent liquids in addition to air.
［発明の効果１
以上に述べたように本発明によれば、投影光学系による
ディストーションの補正手段として像平面前方の空間を
満たす流体に温度分布の偏りを積極的に生ぜしめて屈折
率をわずかに変化させ、レチクルとウェハ上のレチクル
像との間のわずかな位置ずれを無くすことが可能となる
ものである。[Effect of the Invention 1] As described above, according to the present invention, as a means of correcting distortion caused by the projection optical system, the refractive index is slightly reduced by actively creating a bias in temperature distribution in the fluid filling the space in front of the image plane. This makes it possible to eliminate slight positional deviations between the reticle and the reticle image on the wafer.
第１図は本発明の第１実施例を示ず模式構成図、第２図
は同じく第２実施例を示す模式構成図、第３図は同じく
第３実施例を示す模式構成図、第４図は同じく第４実施
例を示す模式構成図である。
１：照明光源、２ニレチクル、３：投影レンズ、４：ウ
ェハ、５：空間、６：ヒータ、７：コントローラ、８：
空気温度調節装置、９：空気流、１０：制御装置、１１
：加熱用光源、１２：レンズ。
尚、図中同一符号は同一また。は相当部分を示すものと
する。FIG. 1 is a schematic diagram showing the first embodiment of the present invention, FIG. 2 is a schematic diagram showing the second embodiment, FIG. 3 is a schematic diagram showing the third embodiment, and FIG. The figure is also a schematic configuration diagram showing the fourth embodiment. 1: illumination light source, 2 reticle, 3: projection lens, 4: wafer, 5: space, 6: heater, 7: controller, 8:
Air temperature control device, 9: Air flow, 10: Control device, 11
: Heating light source, 12: Lens. In addition, the same reference numerals in the figures refer to the same numbers. indicates a considerable portion.
Claims (1)
満たされた空間を配置して、この空間内の流体に温度変
化を与える手段を設け、投影光学系のディストーシヨン
補正のために温度変化によって前記空間内の流体の屈折
率を調整するようにしたことを特徴とする投影型半導体
露光装置。 ２、温度変化を与える手段が加熱ヒータを含む特許請求
の範囲第１項に記載の投影型半導体露光装置。 ３、温度変化を与える手段が加温又は冷却した流体を前
記空間に送給するものである特許請求の範囲第１項に記
載の投影型半導体露光装置。 ４、温度変化を与える手段が加熱用の光を前記空間に照
射するものである特許請求の範囲第１項に記載の投影型
半導体露光装置。 ５、加熱用の光を投影光学系を介して前記空間内に照射
する特許請求の範囲第４項に記載の投影型半導体露光装
置。[Claims] 1. A space filled with fluid is arranged in the optical path between the inside of the projection optical system and the image plane, and means for applying a temperature change to the fluid in this space is provided, and the projection optical system 1. A projection type semiconductor exposure apparatus, characterized in that the refractive index of the fluid in the space is adjusted by temperature change in order to correct distortion. 2. The projection type semiconductor exposure apparatus according to claim 1, wherein the means for applying a temperature change includes a heater. 3. The projection type semiconductor exposure apparatus according to claim 1, wherein the means for applying a temperature change supplies a heated or cooled fluid to the space. 4. The projection type semiconductor exposure apparatus according to claim 1, wherein the means for applying a temperature change irradiates the space with heating light. 5. The projection type semiconductor exposure apparatus according to claim 4, wherein heating light is irradiated into the space through a projection optical system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59221143A JPS61100929A (en) | 1984-10-23 | 1984-10-23 | Projection-type semiconductor exposing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59221143A JPS61100929A (en) | 1984-10-23 | 1984-10-23 | Projection-type semiconductor exposing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61100929A true JPS61100929A (en) | 1986-05-19 |
Family
ID=16762138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59221143A Pending JPS61100929A (en) | 1984-10-23 | 1984-10-23 | Projection-type semiconductor exposing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61100929A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007139773A (en) * | 2005-11-14 | 2007-06-07 | Carl Zeiss Smt Ag | Measuring apparatus and operating method for optical imaging system |
| JP2012134494A (en) * | 2010-12-23 | 2012-07-12 | Asml Netherlands Bv | Lithographic apparatus and method of modifying radiation beam in lithographic apparatus |
| JP2013524492A (en) * | 2010-03-26 | 2013-06-17 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Optical system, exposure apparatus, and wavefront correction method |
| US8913223B2 (en) | 2003-07-16 | 2014-12-16 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
-
1984
- 1984-10-23 JP JP59221143A patent/JPS61100929A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8913223B2 (en) | 2003-07-16 | 2014-12-16 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US9383655B2 (en) | 2003-07-16 | 2016-07-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US9733575B2 (en) | 2003-07-16 | 2017-08-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US10151989B2 (en) | 2003-07-16 | 2018-12-11 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US10656538B2 (en) | 2003-07-16 | 2020-05-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2007139773A (en) * | 2005-11-14 | 2007-06-07 | Carl Zeiss Smt Ag | Measuring apparatus and operating method for optical imaging system |
| JP2013524492A (en) * | 2010-03-26 | 2013-06-17 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Optical system, exposure apparatus, and wavefront correction method |
| JP2012134494A (en) * | 2010-12-23 | 2012-07-12 | Asml Netherlands Bv | Lithographic apparatus and method of modifying radiation beam in lithographic apparatus |
| US9146477B2 (en) | 2010-12-23 | 2015-09-29 | Asml Netherlands B.V. | Lithographic apparatus and method of modifying a beam of radiation within a lithographic apparatus |
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