JPS6094780A - Constant-voltage diode - Google Patents
Constant-voltage diodeInfo
- Publication number
- JPS6094780A JPS6094780A JP58200827A JP20082783A JPS6094780A JP S6094780 A JPS6094780 A JP S6094780A JP 58200827 A JP58200827 A JP 58200827A JP 20082783 A JP20082783 A JP 20082783A JP S6094780 A JPS6094780 A JP S6094780A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- main surface
- junction
- substrate
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000012535 impurity Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 230000004888 barrier function Effects 0.000 claims description 9
- 230000015556 catabolic process Effects 0.000 claims description 4
- 230000002457 bidirectional effect Effects 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 abstract description 4
- 230000001154 acute effect Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 239000003381 stabilizer Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 4
- 238000005453 pelletization Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012778 molding material Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241001635479 Coris bulbifrons Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000009527 percussion Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Chemical group 0.000 description 1
- 239000010937 tungsten Chemical group 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は定電圧ダイオードに係り、特に、ｐｎ接合の端
部構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a constant voltage diode, and in particular to an end structure of a pn junction.
ｐｎ接合の端部構造には正ベベルと負ベベルが（１）
ある。正ベベルとは半導体基体をその一対の主表面だわ
たって切断した場合の縦断面でみた時、ｐｎ接合の端部
が見出している半導体の表面と該端部のなす角が不純物
濃度の高い半導体層側で鈍角になっているものを云い、
負ベベルとは綾角が不純物濃度の高い半導体層側で鋭角
になっているものを云う。ｐｎ接合の端部は主表面が一
対の主表面間の側面に露出される。概略的に云って主表
面に露出したものをプレーナ構造、側面に露出したもの
をメサ構造と呼ぶ。一方、半導体基体はｐ−ｎ−ｎゝあ
るいはｐ＋ ｐ ｎの３層構造とされる。The end structure of a pn junction has a positive bevel and a negative bevel (1). A normal bevel is a semiconductor substrate with a high impurity concentration, where the angle formed by the edge of the semiconductor and the surface of the semiconductor where the edge of the pn junction is found, when viewed in a longitudinal section when the semiconductor substrate is cut across its pair of main surfaces. It refers to something that has an obtuse angle on the layer side.
Negative bevel means that the winding angle becomes acute on the side of the semiconductor layer where the impurity concentration is high. At the end of the pn junction, the main surface is exposed on the side surface between the pair of main surfaces. Roughly speaking, the structure exposed on the main surface is called a planar structure, and the structure exposed on the side surfaces is called a mesa structure. On the other hand, the semiconductor substrate has a pn-n or p+pn three-layer structure.
従来のメサ構造の定電圧ダイオードはｐｎ接合面積を大
きくして逆方向サージ耐量を高め、またｐｎ接合の両側
にできる障壁の端部での電界を緩和するためにｐｎ接合
が主表面と平行な正ベベルにされていた。Conventional mesa structure voltage regulator diodes have a large pn junction area to increase reverse surge resistance, and also have a pn junction parallel to the main surface to alleviate the electric field at the ends of the barriers formed on both sides of the pn junction. It was set to a normal bevel.
従って、ｐｎ接合は大面積となる主表面に近い位置に存
在しており、大面積となる主表面から側面にかけこの一
部で製造工程中に破損や欠落を生（乃
すると、その定電圧特性に大きな影響を与えていた。Therefore, the p-n junction is located close to the main surface, which has a large area. had a great influence on.
近年、ｐｎ接合端部露出面に設ける表面安定化剤として
、洩れ電流を小さくすることが可能なポリイミド系樹脂
が利用されつつあるが、粘性は低く、厚く付着させられ
ない問題がある。特に正ベベル構造になっていると、そ
のような表面安定化剤は酵〈なり、電気力線が洩れて高
耐圧が得られないだけでなく、耐湿性の点でも問題であ
った。In recent years, polyimide-based resins that can reduce leakage current have been used as surface stabilizers provided on the exposed surfaces of pn junction ends, but there is a problem in that they have low viscosity and cannot be applied thickly. In particular, in the case of a positive bevel structure, such a surface stabilizer becomes fermented, causing leakage of electric lines of force and not only making it impossible to obtain a high withstand voltage, but also causing problems in terms of moisture resistance.
本発明の目的は、半導体基体に破損や欠落を生じても、
定電圧特性の受ける影響のない定電圧ダイオードを提供
するにある。The purpose of the present invention is to prevent damage or chipping of the semiconductor substrate.
The object of the present invention is to provide a constant voltage diode whose constant voltage characteristics are not affected.
本発明の特徴とするところは、定電圧ダイオードの半導
体基体を負ベベル構造としたことにある。A feature of the present invention is that the semiconductor substrate of the constant voltage diode has a negative bevel structure.
〔発明の実施例〕 以下、実施例に基づき本発明を説明する。[Embodiments of the invention] The present invention will be explained below based on Examples.
第１図において、１０は本発明になる定電圧ダイオード
である。シリコン基体１１はｐ層１１ａ１ｎ層１１ｂ、
ｎ＋層１１Ｃの３層からなり、比抵抗が０．０１Ωｍ程
度の大面積ｎ型シリコン薄板にｐ型不純物、ｎ型不純物
を各主表面（１１１１から拡散してｐ−ｎ−ｎ”３層構
造としてから、サンドブラスト等の公知手段によりペレ
タイズしてから、表面に残る加工歪をエツチング除去し
て得たものである。尚、不純物が拡散されなかった領域
が４層１１ｂになっている。ペレタイズ前に薄板の両生
表面にニッケル層を鍍金等の技術により設けておく。１
２ａ、１２ｂはペレタイズによってシリコン基体１１の
両生表面に残ったニッケル層である。In FIG. 1, 10 is a constant voltage diode according to the present invention. The silicon substrate 11 includes a p layer 11a1n layer 11b,
Consisting of three layers of n+ layer 11C, p-type impurity and n-type impurity are diffused from each main surface (1111) into a large-area n-type silicon thin plate with a specific resistance of about 0.01 Ωm to form a p-n-n" three-layer structure. It was obtained by pelletizing the pellet by a known means such as sandblasting, and then etching away the processing strain remaining on the surface.The region where impurities were not diffused is the 4 layer 11b.Before pelletizing A nickel layer is provided on the ambidextrous surface of the thin plate using techniques such as plating.1
2a and 12b are nickel layers left on the amphiboid surface of the silicon substrate 11 by pelletizing.
ペレタイズ後のシリコン基体１１の両生表面は円形であ
る。この時、１層１１ａ側の主表面の面積はｎ＋層１１
ｂ側の主表面の面積より小さくなっており、シリコン基
体１１の側周面Ｉ：ｊ：主表面に対して傾斜している。The amphibian surface of the silicon substrate 11 after pelletization is circular. At this time, the area of the main surface on the side of the first layer 11a is the n+ layer 11
The area is smaller than the area of the main surface on the b side, and the side peripheral surface I:j of the silicon substrate 11 is inclined with respect to the main surface.
ｐＭ’＃１１ａとｒｌｌｌｂが隣接して形成しているｐ
ｎｎ接合は主表面と平行である。従ってｐｎｎ接合の露
出端部が側周面となす角は１層１１ａ側で鋭角になって
ｂる。９層１１ａは４層１１ｂより高不純物濃度である
から、シリコン基体１１は負ベベル構造を持っている。pM'#11a and rllllb are adjacent to each other.
The nn junction is parallel to the major surface. Therefore, the angle that the exposed end of the pnn junction makes with the side peripheral surface becomes an acute angle b on the first layer 11a side. Since the nine layers 11a have a higher impurity concentration than the four layers 11b, the silicon substrate 11 has a negative bevel structure.
ニッケル層１２ａ、１２ｂに対して半田１３ａ。Solder 13a to nickel layers 12a, 12b.
１３ｂを介してダブルヘッダーリード１４ａ。Double header lead 14a via 13b.
１４ｂが固着されている。シリコン基体１１の側周面に
はリード１４ａ、１４ｂのシリコン基体１１側の第一ヘ
ッダ部１４ａａ、１４ｂａ間に表面安定化剤１５が設け
られ、更に第二ヘッダ部１４ａｂ、１４ｂｂ間にモール
ド材１６が設けられている。表面安定化剤１５としてポ
リイミドシリコーン樹脂、モールド材１６としてエポキ
シ樹脂が一例として用いられた。14b is fixed. A surface stabilizer 15 is provided on the side peripheral surface of the silicon substrate 11 between the first header portions 14aa and 14ba of the leads 14a and 14b on the silicon substrate 11 side, and a molding material 16 is further provided between the second header portions 14ab and 14bb. is provided. As an example, a polyimide silicone resin was used as the surface stabilizer 15, and an epoxy resin was used as the molding material 16.
シリコン基体１１の製造工程中に破損や欠落を生じ易い
個所はｎ＋層１１Ｃ側の主表面周縁部分であり、破損や
欠落を生じたとしても、ｐｎｎ接合と離れているために
特性低下を起し難い。During the manufacturing process of the silicon substrate 11, damage or chipping is likely to occur at the main surface periphery on the n+ layer 11C side, and even if damage or chipping occurs, the characteristics will deteriorate because it is far away from the pnn junction. hard.
定電圧ダイオードでは、ｎ層が比抵抗３０Ω鋸程度の通
常のダイオードに較べて４層１１ｂが高不純物濃度（低
比抵抗）があるため、逆方向に電圧が印加された場合に
ｐｎｎ接合の両側の９層１１ａ、ｎ層１１ｂ内だできる
障壁はその幅が非常に小さくなる。ツェナー電圧が３０
Ｖ以下の場合、第２図に示す様に９層１１ａ、ｎ層１１
． ｂの各々の層内にできる障壁の幅は１μｍ以下であ
る。In a constant voltage diode, the 4th layer 11b has a higher impurity concentration (lower resistivity) than a normal diode, where the n-layer has a resistivity of about 30Ω, so when a voltage is applied in the opposite direction, both sides of the pnn junction The width of the barrier formed within the nine layers 11a and the n layer 11b becomes extremely small. Zener voltage is 30
In the case of V or less, as shown in FIG.
．． The width of the barrier formed in each layer of b is 1 μm or less.
これを不純物濃度との関係で示すと第３図に示す様に、
ツェナー降伏を起す直前の状態で障壁は不純物傾斜が直
線状となったｐｎ接合の両側の限られた領域に拡がるだ
けで、しかも、９層１１ａ内とｎ層１１ｂ内でほぼ同じ
幅で、不純物濃度もほぼ同じとなっており、障壁内での
電界強度は９層１１ａ、４層１１ｂの両層内でほぼ等し
い。When this is shown in relation to the impurity concentration, as shown in Figure 3,
Immediately before Zener breakdown occurs, the barrier only spreads to a limited area on both sides of the pn junction where the impurity slope is linear. The concentrations are also approximately the same, and the electric field strength within the barrier is approximately equal within both the 9-layer 11a and the 4-layer 11b.
従って、負ベベル構造になっているとしても、側面部分
での障壁の拡がり具合や電界強度は正ベベル構造とした
場合と大差がない。つまり、負ベベル構造になっている
としても、そのことによって、側面部分での耐圧低下の
恐れはない。このことは側面が主表面となす角度によっ
て変更しないので、ベベル角は正確に制御する必要はな
く、Ｉ産性が良い。Therefore, even if the negative bevel structure is adopted, the spread of the barrier and the electric field strength at the side portions are not much different from those in the case of the positive bevel structure. In other words, even if it has a negative bevel structure, there is no risk of a drop in breakdown voltage at the side portions. Since this does not change depending on the angle that the side surface makes with the main surface, there is no need to accurately control the bevel angle, and productivity is good.
第１図に示す様に第一ヘッダ部１４ ａ ａ。As shown in FIG. 1, the first header section 14aa.
１４ｈａをシリコン基体１１と同じかそれ以上の径とし
ておくと、第一ヘッダ部１４ａａ、１４ｂａは表面安定
化剤１５の流れ止めとして働く。特に、ｐｎｎ接合部部
分は表面安定化剤１５は厚くなるから、粘性の低いもの
を用いた場合は、表面安定化剤１５の厚さによる耐圧劣
化や耐湿性低下は生じない。If the diameter of 14 ha is the same as or larger than that of the silicon substrate 11, the first header portions 14aa and 14ba act as a flow stopper for the surface stabilizer 15. In particular, since the surface stabilizer 15 becomes thick at the pnn junction portion, if a low-viscosity agent is used, pressure resistance deterioration and moisture resistance deterioration due to the thickness of the surface stabilizer 15 will not occur.
ｐｎｎ接合上接合面積は正ベベルの場合に較べて小さく
なるが、正ベベル角を大きくとれば接合面積の縮小率は
小さく、シリコン基体１１そのものを従来よりわずかに
大きくすれば、同じ逆サージ耐量を得るととができるか
ら、この点は、負ベベルであっても、問題にならない。The junction area on the pnn junction is smaller than that in the case of a positive bevel, but if the positive bevel angle is made large, the reduction rate of the junction area is small, and if the silicon substrate 11 itself is made slightly larger than the conventional one, the same reverse surge resistance can be achieved. Since it is possible to obtain and , there is no problem in this point even if the bevel is negative.
第４図は本発明の応用例になる定電圧ダイオード２０を
示している。FIG. 4 shows a constant voltage diode 20 which is an application example of the present invention.
第４図において、シリコン基体２１は１層２１ａ。In FIG. 4, the silicon substrate 21 has one layer 21a.
９層２１ｂＸ ｐ＋層２１Ｃの３層を有している。It has three layers: 9 layers 21bX and a p+ layer 21C.
シリコン基体２１はｐ型シリコン板を出発母材として、
ｎ型不純物、ｐ型不純物を各主表面から各各拡散して１
層２１ａ、ｐ＋層２１Ｃを形成したものである。第１図
の実施例と同様大面積シリコン薄板からペレタイズして
得喪もので、０層２１ａ側の主表面がｐ＋層２１ｃ側の
主表面より小さくされており、ｐｎｎ接合上平坦である
ので負ベベル構造になっている。各主表面にはアルミニ
ウムろう２３ａ、２３ｂにより電極リード２４ａ。The silicon substrate 21 uses a p-type silicon plate as a starting material,
Diffuse n-type impurities and p-type impurities from each main surface.
A layer 21a and a p+ layer 21C are formed. Similar to the embodiment shown in FIG. 1, it is pelletized from a large-area silicon thin plate, and the main surface on the 0 layer 21a side is smaller than the main surface on the p+ layer 21c side, and is flat on the pnn junction, so it has a negative bevel. It has a structure. Electrode leads 24a are provided on each main surface by aluminum solders 23a and 23b.
２４ｂが固着されている。電極リード２４ａ。24b is fixed. Electrode lead 24a.
２４ｂはモリブデン或はタングステンのスラグ電極２４
ａａ、２４ｂａとこれにパーカッション溶接された銅リ
ード２４ａｂ、２４ｂｂがらなっている。シリコン基体
２１はその周囲を一方の電極２４ａａから他方の電極２
４ｈａにかけて設けた表面安定化機能を有するガラス２
５でモールドされている。24b is a molybdenum or tungsten slag electrode 24
It consists of copper leads 24ab and 24bb percussion welded to aa and 24ba. The silicon substrate 21 has its periphery connected from one electrode 24aa to the other electrode 2.
Glass 2 with surface stabilization function installed over 4 ha
It is molded with 5.
シリコン基体２１はｎ−１）−ｒ）”３層構造であるが
逆バイアスが加えらハた時％ ｒ”接合Ｊの両側に拡が
る障壁は第１図のものと同様、同じ幅で同じ不純物濃度
の位置に拡がるだけであるから、負ベベルによる耐圧劣
化はないし、ｐ” ）４２ Ｉ Ｃの主表面部に破損や
欠落を生じてもｐｎ接合まで及ぶことはほとんどなく特
性劣下は生じない。The silicon substrate 21 has a three-layer structure (n-1)-r), but when a reverse bias is applied, the barriers extending on both sides of the junction J have the same width and the same impurity content as in Figure 1. Since it only spreads to the concentration position, there is no breakdown voltage deterioration due to negative bevel, and even if the main surface of the p")42 IC is damaged or missing, it will hardly extend to the pn junction and no characteristic deterioration will occur. .
以上説明したように、本発明によれば半導体基体に破損
や欠落を生じても定電圧特性に影響を受けることのない
定電圧ダイオードを得ることができる。As explained above, according to the present invention, it is possible to obtain a constant voltage diode whose constant voltage characteristics are not affected even if the semiconductor substrate is damaged or missing.
【図面の簡単な説明】
第１図は本発明の一実施例を示す定電圧ダイオードの縦
断面図、第２図はツェナー電圧と障壁層幅の関係を示す
図、第３図は定電圧ダイオードのシリコン基体における
不純物濃度プロフィールを示す図、第４図は本発明の応
用例を示す定電圧ダイオードの縦断面図である。
１１・・・シリコン基体、１１ａ・・・ｐ層、１１ｂ・
・・ｎ層、ｌ ｌ Ｃ・・−ｎ”層、１２ａ、１２ｂ・
＝ツケル層、１３ ａ、１３ｂ・・・半田、１４ａ、１
４ｂ・・・半田、１５・・・表面安定化剤、１６・・・
モールド材。
代理人 弁理士 高橋明夫
第 １ 図
ヅエナー電圧ＣＶ）[Brief Description of the Drawings] Fig. 1 is a vertical cross-sectional view of a constant voltage diode showing an embodiment of the present invention, Fig. 2 is a diagram showing the relationship between Zener voltage and barrier layer width, and Fig. 3 is a diagram of a constant voltage diode. FIG. 4 is a longitudinal cross-sectional view of a constant voltage diode showing an application example of the present invention. 11...Silicon base, 11a...p layer, 11b...
・・n layer, l l C・・−n” layer, 12a, 12b・
=Tsukeru layer, 13a, 13b...Solder, 14a, 1
4b...Solder, 15...Surface stabilizer, 16...
mold material. Agent Patent Attorney Akio Takahashi (Figure 1)
Claims (1)
一の半導体層と不純物濃度が第一半導体層より低い他方
導電型の第二の半導体層と他方導電型で第二半導体層よ
り高不純物濃度の第三の半導体層を有し、第一、第二の
両生導体層が作るｐｎ接合は一対の主表面と平行で両主
表面間の側面に端部が露出しており、第一の半導体層側
の主表面は第三の半導体層側の主表面より小さく、ツェ
ナー降伏直前の第一、第二の各半導体層の障壁はほぼ同
じ幅で、同じ不純物濃度の位置に拡がって込ることを特
徴とする定電圧ダイオード。1. The semiconductor substrate has a first semiconductor layer of one conductivity type between the pair of main surfaces, a second semiconductor layer of the other conductivity type whose impurity concentration is lower than that of the first semiconductor layer, and a second semiconductor layer of the other conductivity type, which is lower in impurity concentration than the first semiconductor layer. The pn junction, which has a third semiconductor layer with a high impurity concentration and is formed by the first and second bidirectional conductor layers, is parallel to the pair of main surfaces and has an end exposed on the side surface between the two main surfaces. The main surface on the first semiconductor layer side is smaller than the main surface on the third semiconductor layer side, and the barriers of the first and second semiconductor layers just before Zener breakdown have approximately the same width and spread to positions with the same impurity concentration. A constant voltage diode characterized by a
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58200827A JPS6094780A (en) | 1983-10-28 | 1983-10-28 | Constant-voltage diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58200827A JPS6094780A (en) | 1983-10-28 | 1983-10-28 | Constant-voltage diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6094780A true JPS6094780A (en) | 1985-05-27 |
Family
ID=16430860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58200827A Pending JPS6094780A (en) | 1983-10-28 | 1983-10-28 | Constant-voltage diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6094780A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008010379A (en) * | 2006-06-30 | 2008-01-17 | Mitsumi Electric Co Ltd | Plug connector |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5527618A (en) * | 1978-08-17 | 1980-02-27 | Mitsubishi Electric Corp | Planar diode |
| JPS57104270A (en) * | 1980-12-22 | 1982-06-29 | Hitachi Ltd | Manufacture of constant-voltage element |
-
1983
- 1983-10-28 JP JP58200827A patent/JPS6094780A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5527618A (en) * | 1978-08-17 | 1980-02-27 | Mitsubishi Electric Corp | Planar diode |
| JPS57104270A (en) * | 1980-12-22 | 1982-06-29 | Hitachi Ltd | Manufacture of constant-voltage element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008010379A (en) * | 2006-06-30 | 2008-01-17 | Mitsumi Electric Co Ltd | Plug connector |
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