JPS6081751A - Aperture diaphragm and its manufacturing method - Google Patents
Aperture diaphragm and its manufacturing methodInfo
- Publication number
- JPS6081751A JPS6081751A JP18952783A JP18952783A JPS6081751A JP S6081751 A JPS6081751 A JP S6081751A JP 18952783 A JP18952783 A JP 18952783A JP 18952783 A JP18952783 A JP 18952783A JP S6081751 A JPS6081751 A JP S6081751A
- Authority
- JP
- Japan
- Prior art keywords
- aperture diaphragm
- substrate
- silicon nitride
- nitride film
- aperture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は電子ビーム露光装置における電子ビームの断面
形状を規定するアパーチャ絞シとその製造方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an aperture diaphragm that defines the cross-sectional shape of an electron beam in an electron beam exposure apparatus, and a method for manufacturing the aperture diaphragm.
電子ビーム露光装置、特に電子ビームの断面形状を可変
制御して露光する可変面積露光方式においては、寸法８
度の高いアパーチャ絞シが必要とされている。この方式
では、２つの正方形のアパーチャに電子ビームを照射し
、上のアパーチャの像を下のアパーチャの上に投影する
。上下のアパーチャの間においた偏向器によって電子ビ
ームの方向を制御すると、アパーチャの重なシ方が変化
して捕々の大きさの面積をもつ矩形断面の電子ビームを
得る。このビームを材料上に縮小投影して露光する。こ
のような可変面積の露光方式では、アパーチャ絞シの寸
法精度によって電子ビームの矩形形状が規定されるので
、高梢度なアパーチャ絞）が必要である。これに対して
従来のアパーチャ絞シは、モリブデン（ＭＯ）の刃状板
を４枚重ねて矩形スリットを形成していた。このような
構造ではスリットの平行度及び直交度に誤差が生じやす
いために、露光パターンの矩形形状を歪ませたシ、矩形
パターンのつなぎ精度を低下させたシする原因となって
いた。特に、直交度の誤差については電子ビームの矩形
断面を縮小しても、角度については元の値がそのまま保
たれるので、アパーチャ絞りの寸法精度を決める大きな
要因となっていた。An electron beam exposure device, especially a variable area exposure method that performs exposure by variable control of the cross-sectional shape of the electron beam, has a dimension of 8.
A high degree of aperture diaphragm is required. In this method, two square apertures are irradiated with an electron beam, and the image of the upper aperture is projected onto the lower aperture. When the direction of the electron beam is controlled by a deflector placed between the upper and lower apertures, the direction in which the apertures overlap changes to obtain an electron beam with a rectangular cross section and a randomly sized area. This beam is reduced and projected onto the material for exposure. In such a variable area exposure method, the rectangular shape of the electron beam is determined by the dimensional accuracy of the aperture diaphragm, so an aperture diaphragm with high aperture is required. In contrast, a conventional aperture diaphragm has a rectangular slit formed by stacking four molybdenum (MO) blade-like plates. In such a structure, errors tend to occur in the parallelism and perpendicularity of the slits, which causes the rectangular shape of the exposure pattern to be distorted and the accuracy of connecting the rectangular patterns to decrease. In particular, the orthogonality error was a major factor in determining the dimensional accuracy of the aperture diaphragm because even if the rectangular cross section of the electron beam was reduced, the original value of the angle remained unchanged.
本発明は上記の点を考慮して、寸法精度の高いアパーチ
ャ絞シとその製造方法を提供することを目的とする。In consideration of the above points, the present invention aims to provide an aperture diaphragm with high dimensional accuracy and a manufacturing method thereof.
本発明によれば、アパーチャ絞シの開口寸法よシ大きな
開口が設けられた高融点金属の補強支持梁の上にアパー
チャ絞シの開口を規定しペーテレンジよシ厚い金属膜の
パータンが形成場れていることを特徴とするアパーチャ
絞シが得られる。更に本発明によれば基板と、この基板
を周囲から支持する補強支持梁を有する構造とを高融点
金属を用いて形成する工程と、上記基板上にシリコン窒
化膜の所望のパターンを形成する工程と、電気メツキ法
によシ重金属でしかも強磁性体でない金属をペーテレン
ジより厚くメッキした後にシリコン窒化膜を除去する工
程と、メッキ層をマスクにアパーチャ絞シの開口部に該
当する部分の基板を除去する工程とを含むことを特徴と
するアパーチャ絞シの製造方法が得られる。これによシ
アバーチャ絞シの開口寸法精度を十分に高くすることが
できる。According to the present invention, the opening of the aperture diaphragm is defined on a reinforcing support beam made of a high-melting point metal provided with an opening larger than the opening size of the aperture diaphragm, and a pattern of metal film thicker than that of the aperture range is formed. An aperture diaphragm is obtained which is characterized by: Further, according to the present invention, a step of forming a substrate and a structure having reinforcing support beams for supporting the substrate from the periphery using a high melting point metal, and a step of forming a desired pattern of a silicon nitride film on the substrate. There is a step of plating a heavy metal that is not ferromagnetic using an electroplating method, and then removing the silicon nitride film after plating the metal to a thickness greater than that of a metal range. A method for producing an aperture diaphragm is obtained, which includes the step of removing the aperture diaphragm. This makes it possible to sufficiently increase the accuracy of the opening size of the shear virtual diaphragm.
以下、図面を参照して本発明の一実施例につき説明する
。Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第１図から第７図までは、本発明による電子ビーム露光
装置のアパーチャ絞シの主要製造工程における断面を順
次示した図である。FIG. 1 to FIG. 7 are sequential cross-sectional views showing main manufacturing steps of an aperture diaphragm of an electron beam exposure apparatus according to the present invention.
第１図は１００μｍｎていどの厚みの基板とこの基板を
支える補強支持梁を有する構造を、ＭｏまたはＷ等の高
融点金属を素材として鋳型形成したものである。この構
造はワイヤ放電加工で形成してもよい。FIG. 1 shows a structure having a substrate having a thickness of approximately 100 μm and reinforcing support beams supporting the substrate, which is formed by molding a high melting point metal such as Mo or W as a material. This structure may be formed by wire electrical discharge machining.
第２図は上記基板上に平坦な厚ｊ莫を形成可能なプラズ
マＣＶＤ法を用いて厚さＬ５１１ｍ以上シリコン窒化膜
を形成したものである。In FIG. 2, a silicon nitride film having a thickness of 511 m or more is formed on the above substrate using a plasma CVD method that can form a flat film with a thickness of 511 m.
第３図は上記シリコン窒化膜上にレジストを塗布し、所
望形状パターンに蝕刻除去したものである。FIG. 3 shows a resist coated on the silicon nitride film and etched away into a desired shape pattern.
第４図は、レジストパターンを保護マスクとしてシリコ
ン窒化膜をエツチングしたものである。FIG. 4 shows a silicon nitride film etched using a resist pattern as a protective mask.
第５図はレジストを除去した後に、電気メツキ法によＪ
）Ａｕを厚さ１．５μｍていどメッキしたものでおる。Figure 5 shows J after removing the resist.
) Au plated to a thickness of 1.5 μm.
厚さはペーテレンジよシ厚くする。Ａｕ以外にもＰｔな
ど重金属でしかも強磁性体でないものを用いることがで
きる。このメッキ層が電子線吸収層となるため、強磁性
体は使えない。The thickness should be thicker than a microwave oven. In addition to Au, heavy metals such as Pt that are not ferromagnetic can be used. Since this plating layer becomes an electron beam absorption layer, ferromagnetic materials cannot be used.
第６図は残ったシリコン窒化膜をエツチングしたもので
ある。FIG. 6 shows the remaining silicon nitride film etched.
第７図は、アパーチャ開口に該当する部分のＭｏまたは
Ｗ基板をＣＦ、プラズマエツチングしたものである。こ
のようにして展進したアパーチャ絞夛の直交度は従来の
ものよ９１桁以上改良された。また平行度も改良された
。FIG. 7 shows a portion of the Mo or W substrate corresponding to the aperture opening subjected to CF and plasma etching. The orthogonality of the aperture diaphragm developed in this way is improved by more than 91 orders of magnitude compared to the conventional one. Parallelism has also been improved.
さらに、アパーチャ絞シの開口形状が同一平面上に形成
されるので、寸法精度の高いビーム形状を得ることが可
能となった。Furthermore, since the aperture shapes of the aperture diaphragm are formed on the same plane, it is possible to obtain a beam shape with high dimensional accuracy.
第１図から第７図までの各図は本発明による電子ビーム
露光装置のアパーチャ絞シの製造方法の一実施例につい
てその主要製造工程における断面を順次示した図である
。
１・・・ＭｏまたはＷ基板、２・・・シリコン窒化膜、
３・−レジスト、４・・・Ａｕ０Each of the figures from FIG. 1 to FIG. 7 is a cross-sectional view sequentially showing the main manufacturing steps of an embodiment of the method for manufacturing an aperture diaphragm for an electron beam exposure apparatus according to the present invention. 1...Mo or W substrate, 2...Silicon nitride film,
3.-resist, 4...Au0
Claims (1)
れた高融点金属の補強支持梁の上にアノ（−チャ絞シの
開口を規定しベーテレンジよシも厚い金属膜のパターン
が形成されていることを特徴とするアパーチャ絞シ。 Ｚ 素材として高融点金属を用いて、基板とこの基板を
周囲から支持する補強支持梁を有する構造を形成する工
程と、上記基板上にシリコン窒化膜の所望のパターンを
形成する工程と、電気メツキ法によシ重金属でしかも強
磁性体でない金属をペーテレンジよシ厚くメッキした後
にシリコン窒化膜を除去する工程と、メッキ層をマスク
にアノく一チャ絞シの開口部に該当する部分の基板を除
去する工程とを含むことを特徴とするアパーチャ絞シの
製造方法。[Scope of Claims] L Aperture diaphragm is defined on a reinforcing support beam made of high melting point metal with an opening larger than the aperture size of the aperture diaphragm, An aperture diaphragm characterized in that a pattern is formed.Z A step of forming a structure having a substrate and reinforcing support beams that support the substrate from the periphery using a high melting point metal as a material, and a step of forming a structure on the substrate. A process of forming a desired pattern of silicon nitride film, a process of removing the silicon nitride film after plating a metal that is a heavy metal but is not ferromagnetic to a thickness thicker than a paste range by electroplating, and a process of removing the silicon nitride film using the plating layer as a mask. A method for manufacturing an aperture diaphragm, comprising the step of removing a portion of the substrate corresponding to the opening of the aperture diaphragm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18952783A JPS6081751A (en) | 1983-10-11 | 1983-10-11 | Aperture diaphragm and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18952783A JPS6081751A (en) | 1983-10-11 | 1983-10-11 | Aperture diaphragm and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6081751A true JPS6081751A (en) | 1985-05-09 |
Family
ID=16242780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18952783A Pending JPS6081751A (en) | 1983-10-11 | 1983-10-11 | Aperture diaphragm and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6081751A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0457632A2 (en) * | 1990-04-16 | 1991-11-21 | Fujitsu Limited | Blanking aperture array and method of producing same |
| CN103094031A (en) * | 2011-11-07 | 2013-05-08 | Fei公司 | Charged particle beam system aperture |
| WO2020136012A1 (en) * | 2018-12-26 | 2020-07-02 | Asml Netherlands B.V. | Method of manufacturing an aperture device |
-
1983
- 1983-10-11 JP JP18952783A patent/JPS6081751A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0457632A2 (en) * | 1990-04-16 | 1991-11-21 | Fujitsu Limited | Blanking aperture array and method of producing same |
| US5215623A (en) * | 1990-04-16 | 1993-06-01 | Fujitsu Limited | Blanking aperture array and method of producing same |
| CN103094031A (en) * | 2011-11-07 | 2013-05-08 | Fei公司 | Charged particle beam system aperture |
| EP2590203A3 (en) * | 2011-11-07 | 2014-06-04 | Fei Company | Charged particle beam system aperture |
| US8907296B2 (en) | 2011-11-07 | 2014-12-09 | Fei Company | Charged particle beam system aperture |
| WO2020136012A1 (en) * | 2018-12-26 | 2020-07-02 | Asml Netherlands B.V. | Method of manufacturing an aperture device |
| US20200211817A1 (en) * | 2018-12-26 | 2020-07-02 | Asml Netherlands B.V. | Systems and methods for etching a substrate |
| KR20210092805A (en) * | 2018-12-26 | 2021-07-26 | 에이에스엠엘 네델란즈 비.브이. | Systems and methods for etching substrates |
| CN113228220A (en) * | 2018-12-26 | 2021-08-06 | Asml荷兰有限公司 | Method for manufacturing aperture device |
| US11581161B2 (en) | 2018-12-26 | 2023-02-14 | Asml Netherlands, B.V. | Systems and methods for etching a substrate |
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