JPS607962A - Curing method of resin - Google Patents
Curing method of resinInfo
- Publication number
- JPS607962A JPS607962A JP11502983A JP11502983A JPS607962A JP S607962 A JPS607962 A JP S607962A JP 11502983 A JP11502983 A JP 11502983A JP 11502983 A JP11502983 A JP 11502983A JP S607962 A JPS607962 A JP S607962A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- film
- curing
- sputtering
- silicone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【発明の詳細な説明】
発明の技術分野
本発明は樹脂の硬化方法に関し、特に熱硬化性樹脂を高
温加熱することなしに硬化させる方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION TECHNICAL FIELD OF THE INVENTION The present invention relates to a method of curing a resin, and more particularly to a method of curing a thermosetting resin without heating it to a high temperature.
技術の背景
例えばＰＬＯ８（Ｐｏｌｙ−Ｌａｄｄｅｒ −Ｏｒｇａ
ｎｏ−８ｉｌｏｘａｎｅ ）などのシリコン（ｓｉ）系
の熱硬化性樹脂は、スピンコーティングと熱処理にょシ
簡単に膜形成がでできるので、ＩＣや、バブルメモリ等
の分野で絶縁膜、保護膜として使用されつつある。特に
バブルメモリにおいては、コンダクタノ４ターンによる
段差を樹脂を用いて平坦化する樹脂プレナー化プロセス
の開発により、現在ＩＭｂｉｔメモＩＪ ｔで製品化さ
れ、更に４ Ｍｂｉｔ 、１６ Ｍｂｉｔメモリの開発
が進められている。Technical background For example, PLO8 (Poly-Ladder-Orga
Silicon (SI)-based thermosetting resins such as No-8iloxane) can be easily formed into films through spin coating and heat treatment, so they are used as insulating films and protective films in fields such as ICs and bubble memories. It's coming. Particularly in the case of bubble memory, the development of a resin planarization process that uses resin to flatten the level difference caused by the four turns of the conductor has now been commercialized as IMbit Memo IJt, and further development of 4 Mbit and 16 Mbit memories is progressing. ing.
しかし従来の樹脂プロセスでは後述するような樹脂の硬
化方法に問題があシ、その対策が要望されている。However, in the conventional resin process, there are problems in the resin curing method as described below, and countermeasures are desired.
従来技術と問題点
従来の樹脂硬化方法では樹脂を３００℃以上の高温に加
熱する必要があり、このだめ樹脂膜に大きなストレスが
生じる。４Ｍｂｉｔ以上の高密度容縫バブルメモリでは
、バブル径が１．３μｎ１以下と微小になり且つ結晶の
磁歪定数゛λ″が大きくなるのでストレスの影響を受け
やすく、動作不良が発生しやすくなるという問題がある
。Prior Art and Problems In the conventional resin curing method, it is necessary to heat the resin to a high temperature of 300° C. or higher, which causes a large stress on the resin film. In high-density bubble memories of 4 Mbit or more, the bubble diameter is as small as 1.3 μn1 or less, and the crystal magnetostriction constant 〛λ'' is large, so it is susceptible to stress and malfunctions are more likely to occur. There is.
発明の目的
本発明は、上記従来技術の問題に鑑み、樹脂の硬化に伴
って発生するストレスができるだけ小さくなるような樹
脂硬化方法を捉供することを目的とするものである。OBJECTS OF THE INVENTION In view of the above-mentioned problems of the prior art, it is an object of the present invention to provide a resin curing method that minimizes the stress generated during resin curing.
発明の構成
本発明は原理的には熱硬化性シリコン系樹脂を、高温加
熱することなしに、シリコン系無機絶縁物のスパッタリ
ングによる高エネルギを利用して硬化させるものである
。Structure of the Invention In principle, the present invention is to cure a thermosetting silicone resin using high energy generated by sputtering a silicone inorganic insulator without heating it to a high temperature.
即ち本発明による樹脂硬化方法は、熱硬化性シリコン系
樹脂を基板に膜状に塗布し、次に比較的低温でゾレキー
アを行って樹脂膜中の溶剤を蒸発させた後、該樹脂膜上
にシリコン系無機絶縁膜をスパッタリングで形成するこ
とにより該樹脂の硬化反応を行わせるようにするもので
ある。That is, in the resin curing method according to the present invention, a thermosetting silicone resin is applied to a substrate in the form of a film, and then Zolechia is performed at a relatively low temperature to evaporate the solvent in the resin film. By forming a silicon-based inorganic insulating film by sputtering, the resin is caused to undergo a curing reaction.
発明の実施例
以下、本発明の実施例につき図面を参照して詳細に説明
する。Embodiments of the Invention Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
第１図から第３図は本発明の樹脂硬化方法によって基板
上にＰｕＯ８の硬化膜を形成する一実施例の主要工程を
示すものである。1 to 3 show the main steps of an embodiment of forming a cured film of PuO8 on a substrate by the resin curing method of the present invention.
（１）マず、第１図に示すように、基板１上にＰｕＯ８
２をスピンコーティングによシ膜状に塗布する。(1) First, as shown in Figure 1, put PuO8 on the substrate 1.
2 is applied in a film form by spin coating.
（２）次に、８０〜１５０℃、好ましくは１２０℃程度
の低温で２０〜９０分間、好ましくは６０分間のルキュ
アを行って、ＰＬＯ８膜２中の溶剤を蒸発させる。(2) Next, lucure is performed at a low temperature of 80 to 150°C, preferably about 120°C, for 20 to 90 minutes, preferably 60 minutes, to evaporate the solvent in the PLO8 membrane 2.
（３）そして、第２図及び第３図に示すように、高周波
（ＲＦ ）スパッタリングによりＰＴ、Ｏ８膜２上に、
Ｓｉ０ 、８１０，２ 、 Ｓｉ ５Ｎ４等のシリコン
系無機絶縁物の膜３を形成する。これによってｐＬＯ８
膜２の硬化が完了する。(3) Then, as shown in FIGS. 2 and 3, the PT and O8 films 2 are coated by radio frequency (RF) sputtering.
A film 3 of a silicon-based inorganic insulator such as Si0, 810,2, Si5N4, etc. is formed. This allows pLO8
The curing of the film 2 is completed.
ＰＬＯ８膜２の硬化が生じていることは、次の実験結果
から立証された。すなわち、円筒型プラズマエツチング
（ｆスはＣＦ４−５チ０２）での、ＰｕＯ３゜５ｉｏ２
． ＰｕＯ８＋ ５ｔｏ２のエッチレート比は８：５：
１とな、！ｌ）、ＰｕＯ８上にＳ ｉ ０２をスパック
することによってエッチレートが極端に小さく、つまシ
硬度が高くなっていることがわかる。尚、スノやツタリ
ングによるＰｕＯ８の硬化のメカニズムは解明されてい
ないが、スパッタリングの高エネルギによってＰｕＯ２
内でいわゆる架橋反応が行われるだめと推考される。It was proven from the following experimental results that the PLO8 film 2 had hardened. That is, PuO3゜5io2 in cylindrical plasma etching (fs is CF4-5chi02)
．． The etch rate ratio of PuO8+ 5to2 is 8:5:
1! 1) It can be seen that the etch rate is extremely low and the hardness is high by spucking S i 02 on PuO8. Although the mechanism of hardening of PuO8 due to sloping and ivy has not been elucidated, the high energy of sputtering causes PuO2 to harden.
It is presumed that a so-called cross-linking reaction takes place within the pores.
まだ、上記の高周波スパッタリングの場合、ス・やツタ
リング中の温度は最高２６０℃まで上がるが、それでも
従来の高温加熱硬化方法と比較すればずっと低温である
。更に、最近のマグネトロン型スＡツタリング装置を用
いれば一層低温での処理が可能である。However, in the case of the above-mentioned high-frequency sputtering, the temperature during sputtering rises to a maximum of 260° C., but it is still much lower than the conventional high-temperature heat curing method. Furthermore, the use of recent magnetron-type A-stutting equipment allows processing at even lower temperatures.
発明の効果
以上のように本発明によれば、熱硬化性樹脂を高温処理
することなく硬化可能であり、従って硬化に伴うストレ
スを小さくすることができる。Effects of the Invention As described above, according to the present invention, it is possible to cure the thermosetting resin without subjecting it to high temperature treatment, and therefore the stress associated with curing can be reduced.
従って本発明の方法をｚ４７″ルメモリに適用すれば誤
動作の少ない高信頼性の・々プルメモリを実現可能であ
る。尚、本発明は・ダブルメモリ以外の種種の分野にも
適用可能である。Therefore, if the method of the present invention is applied to a Z47'' double memory, a highly reliable double-pull memory with few malfunctions can be realized.The present invention can also be applied to various fields other than double memories.
第１図、第２図及び第３図は本発明の樹脂硬化方法の一
実施例の主要工程を示す図である。
１・・・基板、２・・・ＰｕＯ８膜、３・・・シリコン
系無機絶縁物（まだは膜）。
特許出願人
富士通株式会社
！侍許出願代理人
弁理士 青 木 朗
弁理士西舘和之
弁理士 内 １）幸 男
弁理士 山 口 昭 之
第１図
第２円
１１１−＝
第３柑1, 2, and 3 are diagrams showing the main steps of an embodiment of the resin curing method of the present invention. 1...Substrate, 2...PuO8 film, 3...Silicon-based inorganic insulator (still film). Patent applicant Fujitsu Limited! Patent attorney representing the patent application: Akira Aoki Patent attorney Kazuyuki Nishitate 1) Yukio patent attorney Akira Yamaguchi Figure 1 2 yen 111-= 3rd kan
Claims (1)
、まず樹脂を基板に膜状に塗布し、次に比較的低温でプ
レキュアを行って樹脂膜中の溶剤を蒸発させた後、該樹
脂膜上にシリコン系無機絶縁膜をス・フッタリングで形
成することにょシ該樹脂の硬化反応を行わせることを特
徴とする樹脂硬化方法。1. In the method of curing thermosetting silicone resin, the resin is first applied to the substrate in the form of a film, then precure is performed at a relatively low temperature to evaporate the solvent in the resin film, and then the resin is coated on the resin film. A method for curing a resin, which comprises forming a silicon-based inorganic insulating film by foot-footing and causing a curing reaction of the resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11502983A JPS607962A (en) | 1983-06-28 | 1983-06-28 | Curing method of resin |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11502983A JPS607962A (en) | 1983-06-28 | 1983-06-28 | Curing method of resin |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS607962A true JPS607962A (en) | 1985-01-16 |
| JPH0337987B2 JPH0337987B2 (en) | 1991-06-07 |
Family
ID=14652453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11502983A Granted JPS607962A (en) | 1983-06-28 | 1983-06-28 | Curing method of resin |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS607962A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63243015A (en) * | 1987-03-13 | 1988-10-07 | ジヨンソン・アンド・ジヨンソン・ベイビー・プロダクツ・カンパニー | Skin care composition |
| US6048549A (en) * | 1997-12-19 | 2000-04-11 | Johnson & Johnson Consumer Companies, Inc. | Powder compositions |
-
1983
- 1983-06-28 JP JP11502983A patent/JPS607962A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63243015A (en) * | 1987-03-13 | 1988-10-07 | ジヨンソン・アンド・ジヨンソン・ベイビー・プロダクツ・カンパニー | Skin care composition |
| US6048549A (en) * | 1997-12-19 | 2000-04-11 | Johnson & Johnson Consumer Companies, Inc. | Powder compositions |
| US6426092B1 (en) * | 1997-12-19 | 2002-07-30 | Johnson & Johnson Consumer Companies, Inc. | Powder compositions comprising a skin irritation reducing agent |
| US6660304B2 (en) | 1997-12-19 | 2003-12-09 | Johnson & Johnson Consumer Companies, Inc | Method of treating prickly heat |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0337987B2 (en) | 1991-06-07 |
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