JPS6078636A - Plasma process apparatus utilizing chemical reaction - Google Patents
Plasma process apparatus utilizing chemical reactionInfo
- Publication number
- JPS6078636A JPS6078636A JP18448483A JP18448483A JPS6078636A JP S6078636 A JPS6078636 A JP S6078636A JP 18448483 A JP18448483 A JP 18448483A JP 18448483 A JP18448483 A JP 18448483A JP S6078636 A JPS6078636 A JP S6078636A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- pair
- exhaust duct
- distribution
- central exhaust
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、化学反応を利用したプラズマプロセス装置
に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a plasma processing apparatus that utilizes chemical reactions.
原料ガス（反応ガス）を加熱された基板上に導入し、そ
の基板表面またはその近くで化学反応を起させ、基板表
面上に被膜を形成するＣＶＤ （Ｃｈｅ−ｍｉｃａｌ
Ｖａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ）法は、超ＬＳＩや
太陽電池の製造等の半導体製造技術において広く実用化
されてお、９、ＣＶＤ装置として種々の形式のものが提
案されてきた。CVD (Chemical Chemical Vapor Deposition) involves introducing a raw material gas (reactive gas) onto a heated substrate, causing a chemical reaction on or near the substrate surface, and forming a film on the substrate surface.
The vapor deposition (Vapor Deposition) method has been widely put into practical use in semiconductor manufacturing techniques such as the production of VLSIs and solar cells, and various types of CVD apparatuses have been proposed.
ＣＶＤ装置においては試料（基板）表面によシ多くの反
応ガスを供給して反応速度を高めて生産性を上けると共
に試料表面上における反応ガスの分布を一様にして形成
される膜厚を均一化する必要がある。そこで反応ガスの
吹出口を工夫したシ、試料を回転させたシ、或いは減圧
法を用いる等の手段が利用されている。しかしながら、
反応ガスの吹出しの均一化できても、排気ガスの流れが
一方向に限定されるため、結果として試料表面上の反応
ガスの分布の均一化は困難であった。％に例えば処理す
べき試料が太陽電池のように比較的大きな寸法のもので
ある場合や多数の試料を同時に処理する場合などには反
応ガスの分布を均一化するのに多大の労力を要していた
。一般にこの種の技術においては被蒸着物を反応ガス、
例えはシランガス（ＳｉＨ４）で均一に榎いしかも一定
量間断なく供給することが要求される。In CVD equipment, a large amount of reactive gas is supplied to the surface of the sample (substrate) to increase the reaction rate and productivity, and at the same time, the distribution of the reactive gas on the sample surface is made uniform to increase the thickness of the formed film. It is necessary to equalize. Therefore, methods such as modifying the outlet for the reaction gas, rotating the sample, or using a depressurization method are used. however,
Even if the blowout of the reaction gas could be made uniform, the flow of the exhaust gas was limited to one direction, and as a result, it was difficult to make the distribution of the reaction gas uniform on the sample surface. For example, when the sample to be processed is relatively large such as a solar cell, or when a large number of samples are processed at the same time, it takes a lot of effort to make the distribution of the reactant gas uniform. was. Generally, in this type of technology, the object to be evaporated is a reactive gas,
For example, silane gas (SiH4) is required to be supplied uniformly and in a fixed amount without interruption.
そこで、この発明の目的は、この種のプロセス装置にお
いて排気手段を改良することによって試料表面上におけ
る反応ガスの分布を均一化を得ることにある。SUMMARY OF THE INVENTION An object of the present invention is to improve the evacuation means in this type of process apparatus to achieve a uniform distribution of reactive gas on the surface of a sample.
この目的を連取するために、この発明によるプロセス装
置は、対向して配置された一対の電極と、これらの電極
間において各電極に相対した位置に試料を位置決めでき
る一対の試料ホルダと、この一対の試料ホルダ間に配置
され各試料ホルダに装着された試料ｒ（対して対称位置
に排気口を備えた中央ｖト気ダクトとを有し、上記中央
排気ダクトを介しての排気により各試料表面上における
反応ガスの均一分布を保つように構成したことを特徴と
している。In order to achieve this purpose, a process device according to the present invention includes a pair of electrodes arranged opposite to each other, a pair of sample holders capable of positioning a sample between these electrodes at a position opposite to each electrode, and a pair of sample holders arranged opposite to each other. The sample R (which is placed between the sample holders and mounted on each sample holder) has a central air duct equipped with an exhaust port at a symmetrical position, and the surface of each sample is It is characterized in that it is configured to maintain uniform distribution of the reactant gas on the top.
特に、この発明によるプロセス装置は、試料を垂直方向
に保持して反応処理を行なう縦型インラ以下この発明を
、添附図面を参照して一実施例について説明する。In particular, the process apparatus according to the present invention is a vertical inn which performs reaction treatment while holding a sample in a vertical direction.The present invention will be described below with reference to the accompanying drawings, with reference to an embodiment.
第１，２図にはこの発明を実施している装置の一部すな
わち−りの反応処理部を示し、実際に形成すべき膜の層
数に相応した数だけ互いに連結して並置に設けられる。Figures 1 and 2 show a part of the apparatus implementing the present invention, that is, the reaction processing section, which are connected to each other and arranged in parallel in a number corresponding to the number of layers of the film to be actually formed. .
そしてその前端と後端とには試料装着部および試料取出
し部が設りられ得る。A sample mounting section and a sample retrieval section may be provided at the front end and the rear end.
第１，２図において、１は反応処理室を構成している真
空容器で、この中に一対のＲＦ電極２．２が互いに対向
してしかも隔間して配置され、これらの各ＲＦ％極２は
支持部材５を介して真空容器１の側部取付フランジ１ａ
に密封固定された取付部材４によって支持されている。In FIGS. 1 and 2, 1 is a vacuum container constituting a reaction processing chamber, in which a pair of RF electrodes 2.2 are arranged facing each other and spaced apart from each other, and each of these RF electrodes 2.2 is arranged at a distance from each other. 2 is a side mounting flange 1a of the vacuum container 1 via a support member 5.
It is supported by a mounting member 4 that is sealed and fixed to.
上記一対のｔｆ極２間において真空容器１の中央にその
上端から下端までのびしかも真空容器１の実質的に全幅
にわたって中央排気ダクト５が設けられている。A central exhaust duct 5 is provided at the center of the vacuum vessel 1 between the pair of tf electrodes 2, extending from the upper end to the lower end and covering substantially the entire width of the vacuum vessel 1.
また符号６．６．７．８は中央排気ダクト５０両側壁５
ａの各々と各ＲＦ を極２との間の空間内に試料９をそ
れぞれ装着した試料ホルダ１０を搬送案内するローラ装
置で、６，６は長手軸線方向に沿って一定の間隔を置い
て並列された多数のローラから成る下方ローラ装置であ
り、また７、８は同柿な朽底をもつ上方ローラ装置であ
って、７はガイドローラ型式であ）、一方上方ローラ装
置８は支持ローラ型式である。二つの上方ローラ装置７
゜８を両方をガイドローラ型式または支持ローラ型式に
してもよい。或いは他の適当な形式の案内・支持手段を
用いてもよい。各下方ローラ装置６のローラ６ａのうち
の一つまたは幾つかは連結部側６ｂを介して図示してな
い駆動モータに連結される。なお各試料ホルダ１０は上
方からクシ下げてＬＪｊ送案内するようにすることもで
きる。Moreover, the code 6.6.7.8 is the central exhaust duct 50 both side walls 5
A roller device that transports and guides a sample holder 10 with a sample 9 mounted thereon in the space between each of a and each RF pole 2, and 6 and 6 are arranged in parallel at a constant interval along the longitudinal axis direction. 7 and 8 are upper roller devices with similar rotary bottoms (7 is of the guide roller type), while the upper roller device 8 is of the support roller type. It is. two upper roller devices 7
8 may be both of the guide roller type or support roller type. Alternatively, other suitable types of guiding and supporting means may be used. One or several of the rollers 6a of each lower roller arrangement 6 is connected via a coupling side 6b to a drive motor, not shown. Note that each sample holder 10 may be lowered from above by a comb and guided for LJj feeding.
中央Ｖ［気ダクト５の下方端部は真空容器１の下１１］
すに増刊けられた排気糸１１に連通している。また中央
排気ダクト５の各側壁５ａには、試料９に対して対称位
置すなわち図示実施例では上方部位と下方部位とにυト
気ロ５ ｂ ｖ ５ ｃが設けられている。Center V [The lower end of the air duct 5 is the bottom 11 of the vacuum container 1]
It is connected to the exhaust thread 11 which has been added to the exhaust thread. Further, each side wall 5a of the central exhaust duct 5 is provided with air vents 5 b v 5 c at symmetrical positions with respect to the sample 9, that is, in the illustrated embodiment, at an upper portion and a lower portion.
これらの排気口５ｂ、５ｃは、各ＲＦ電極内を通って反
応ガス供給および給電系１３から試料９に対して導入さ
れた反応ガスの均一分布を保証するように位置決めおよ
び寸法法めされる。These exhaust ports 5b, 5c are positioned and dimensioned to ensure uniform distribution of the reactant gas introduced from the reactant gas supply and power supply system 13 to the sample 9 through each RF electrode.
動作において、各試料ホルダ１０はローラ装置６の制御
された駆動によって組合さった電極２と対向する処理位
置へ搬送される。電極２の付勢と共に電極２から反応ガ
スが試料９の表面全体に一様に導入され、導入されたガ
スは中央排気ダクト５によって上下の排気口５ｂ、５ｃ
から排気することによ）、試料９に対して上下二方向に
油って流れ、試料表面上における反応ガスの分布を均一
化させる。これによって試料表面上における化学反応に
よって形成される膜の膜厚は一様となり得る。In operation, each sample holder 10 is transported by a controlled drive of the roller arrangement 6 to a processing position opposite the associated electrode 2 . As the electrode 2 is energized, the reaction gas is uniformly introduced from the electrode 2 to the entire surface of the sample 9, and the introduced gas is passed through the central exhaust duct 5 to the upper and lower exhaust ports 5b, 5c.
(by exhausting air from the sample 9), the oil flows upwardly and downwardly toward the sample 9, making the distribution of the reaction gas uniform on the sample surface. As a result, the thickness of the film formed by the chemical reaction on the sample surface can be made uniform.
こうして処理された試料９の試料ホルダ１０はそれぞれ
ローラ装置乙によって次の工程場所へ移送される。The sample holders 10 of the samples 9 processed in this way are each transported to the next processing location by the roller device B.
図示実施例では先細形の中央排気ダクト５を用いている
ため、ＲＦｉｉ、極２および試料ホルダ１０は若干傾斜
させて配置しているが、中央排気ダクトを上端から下端
まで同じ幅とし、垂直配置とすることも可能である。ま
た試料ホルダ１０を中央排気ダクト５上にまたがらせて
一体構造とすることもできる。さらに中央排気ダクト５
に設ける排気口は上下の他に必要ならば試料に対して左
右位置に設けることもできる。In the illustrated embodiment, a tapered central exhaust duct 5 is used, so the RFii, the pole 2, and the sample holder 10 are arranged at a slight inclination. It is also possible to do this. Alternatively, the sample holder 10 can be made to straddle the central exhaust duct 5 to form an integral structure. Furthermore, the central exhaust duct 5
The exhaust ports can be provided not only at the top and bottom but also at the left and right positions relative to the sample if necessary.
以上説明してきたようにこの発明によれば、試料に対し
て対称位置に排気口を備えた中央排気ダクトを設けてい
るので、試料表面に対して導入される反応ガスを従来の
ように一方向に排気せずに対称方向に排気でき、その結
果試料表面における反応ガス分布を向上させることがで
き、分布の均一化を容易に達成することができる。As explained above, according to the present invention, since the central exhaust duct is provided with the exhaust ports at symmetrical positions with respect to the sample, the reaction gas introduced to the sample surface can be directed in one direction as before. The gas can be evacuated in a symmetrical direction without being evacuated unilaterally, and as a result, the reaction gas distribution on the sample surface can be improved, and uniform distribution can be easily achieved.
第１図はこの発明のプロセス装置の一実施例の要部の概
略横断面図、第２図は第１図の装置の要部の概略縦断面
図である。
図中、１：真空容器、２：ＲＦ電極、 ５：中央排気ダ
ク） ＋ ５ｂ＋５ｃ 二排気口、 ９：試料、 １０
：試料ホルダ。FIG. 1 is a schematic cross-sectional view of a main part of an embodiment of a process apparatus of the present invention, and FIG. 2 is a schematic longitudinal cross-sectional view of a main part of the apparatus shown in FIG. In the figure, 1: Vacuum vessel, 2: RF electrode, 5: Central exhaust duct) + 5b + 5c 2 exhaust ports, 9: Sample, 10
:Specimen holder.
Claims (1)
間において各電極に相対した位置に試料を位置決めでき
る一対の試料ホルダと、この一対の試料ホルダ間に配置
され各試料ホルダに装着された試料に対して対称位置に
排気口を備えた中央排気ダクトとを有し、上記中央排気
ダクトを介しての排気によυ各試料表面上における反応
ガスの分布を均一化するように構成したことを特徴とす
る化学反応を利用したプラズマプロセス装置。 ２、 中央排気ダクトをはさんで位置する一対の試料ホ
ルダを装置の長手軸線方向に清って移動できるようにし
た特許請求の範囲第１項に記載の装置。[Claims] 1. A pair of electrodes arranged opposite to each other, a pair of sample holders that can position a sample at a position opposite to each electrode between these electrodes, and a pair of sample holders arranged between the pair of sample holders. and a central exhaust duct with exhaust ports located symmetrically with respect to the sample mounted on each sample holder, and the distribution of the reaction gas on the surface of each sample is controlled by exhausting through the central exhaust duct. A plasma processing device that utilizes chemical reactions and is characterized by being configured to achieve uniformity. 2. The device according to claim 1, wherein the pair of sample holders positioned across the central exhaust duct are movable in the longitudinal axis direction of the device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18448483A JPS6078636A (en) | 1983-10-04 | 1983-10-04 | Plasma process apparatus utilizing chemical reaction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18448483A JPS6078636A (en) | 1983-10-04 | 1983-10-04 | Plasma process apparatus utilizing chemical reaction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6078636A true JPS6078636A (en) | 1985-05-04 |
Family
ID=16153979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18448483A Pending JPS6078636A (en) | 1983-10-04 | 1983-10-04 | Plasma process apparatus utilizing chemical reaction |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6078636A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5651828A (en) * | 1979-09-28 | 1981-05-09 | Ibm | Method and device for forming field for uniform gaseous molecule |
| JPS56152736A (en) * | 1980-04-25 | 1981-11-26 | Mitsubishi Electric Corp | Chemical vapor deposition device using decreased pressure |
-
1983
- 1983-10-04 JP JP18448483A patent/JPS6078636A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5651828A (en) * | 1979-09-28 | 1981-05-09 | Ibm | Method and device for forming field for uniform gaseous molecule |
| JPS56152736A (en) * | 1980-04-25 | 1981-11-26 | Mitsubishi Electric Corp | Chemical vapor deposition device using decreased pressure |
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