JPS6074583A - Manufacture of solar cell - Google Patents
Manufacture of solar cellInfo
- Publication number
- JPS6074583A JPS6074583A JP58180527A JP18052783A JPS6074583A JP S6074583 A JPS6074583 A JP S6074583A JP 58180527 A JP58180527 A JP 58180527A JP 18052783 A JP18052783 A JP 18052783A JP S6074583 A JPS6074583 A JP S6074583A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- electroless
- electrode
- solar cell
- executed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000007747 plating Methods 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims description 9
- 238000010304 firing Methods 0.000 claims description 6
- 229910000510 noble metal Inorganic materials 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052762 osmium Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910021475 bohrium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 6
- 239000011574 phosphorus Substances 0.000 abstract description 6
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 239000010970 precious metal Substances 0.000 abstract 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 230000002950 deficient Effects 0.000 abstract 1
- 230000007257 malfunction Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 229910000711 U alloy Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009661 fatigue test Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】 〔発明の技術分野〕 この発明は、太陽電池の製造方法に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a method for manufacturing a solar cell.
一般に太陽電池は第１図に示すように構成され、直径約
１００瓢のＳｉウェーハ１の表面に幅約１００〜３００
μｍ位の微細電極（グリッド）２が形成されており、こ
の微細電極２から更にバス電極３に電気が集められる構
造になっている。Generally, a solar cell is constructed as shown in FIG.
A microelectrode (grid) 2 of about μm size is formed, and the structure is such that electricity is further collected from the microelectrode 2 to a bus electrode 3.
このような太陽電池を製造するには、従来、第２図に示
すように、厚さ２００〜４００細のＰ型Ｓｉウェーハ１
の表面に拡散等によって１細以下の薄いＮ＋層４を形成
し、又、裏面にはＵ合金等によりＰ＋ＢＳＦ層５を形成
する０次に、上記Ｎ＋層４上に、Ｓｔ、Ｎ４等から力る
厚さ７００芙程度の反射防止膜６を形成する。次にこの
反射防止膜６上にメツキレシスト（図示せず）をスクリ
ーン印刷し、とれをマスクに反射防止膜６中の所望の電
極部分を化学腐蝕する。次に反射防止膜＋メツキレシス
トをマスクとして表裏同時に無電解Ｎｉメッキを行なっ
て゛パス電極３、微細電極２、電極７を形成する。次に
メツキレシストを剥離した後、Ｎｉの焼成を行なう。最
後に半田に浸して、表裏に半田層８．９を形成する。In order to manufacture such solar cells, conventionally, as shown in FIG.
A thin N+ layer 4 of less than 1 thickness is formed on the front surface by diffusion, etc., and a P+BSF layer 5 is formed on the back surface of U alloy, etc.Next, on the N+ layer 4, force is applied from St, N4, etc. An antireflection film 6 having a thickness of approximately 700 mm is formed. Next, a metal resist (not shown) is screen printed on this anti-reflection film 6, and desired electrode portions in the anti-reflection film 6 are chemically etched using the flakes as a mask. Next, electroless Ni plating is performed simultaneously on the front and back surfaces using the anti-reflection film + metal resist as a mask to form the pass electrode 3, the fine electrode 2, and the electrode 7. Next, after peeling off the metal resist, Ni is fired. Finally, it is dipped in solder to form a solder layer 8.9 on the front and back sides.
これでセルとしては完成であるが、ノやネルとして組立
てるには、セルに２ｗｍＸ５０μｍのＣｕＩＪ ｐを２
本半田付けして他のセルと直列接続し、その後、ガラス
板に貼り付ける等の方法によって行なう。The cell is now complete, but in order to assemble it as a flannel, add 2wm x 50μm CuIJp to the cell.
This is done by soldering to connect the cells in series with other cells, and then attaching them to a glass plate.
上記従来の製造方法では、既述のように無電解Ｎ１メッ
キにより電極２，３．７を形成していた。しかし、この
メッキ法によると、製造条件によってＮｌ中に燐が１〜
１０ｅＩ６含まれる。そして無電解Ｎ１メッキを焼成す
ると、３２５℃以上では燐、 Ｓｔ 、 Ｎｉ間の錯化
合物を生じ、もろくなる（また４００℃以上になるとＮ
１がＮ”Ｐ接合を突き抜けＶＯＣが低下する）。この状
態では引張強度テストにおいても比較的低い引張力（例
えばＺｔｔｒｍ幅のＣｕ ＩＪ−ドを上記パス電極３に
半田付けし、４５０の角度に引張って２００９ｒ以下）
で電極がＳｔごと剥れ、組立中に剥れたり、又、疲労ラ
イフテストで電極が８１ごと剥れるという事故が生じた
。この対策として焼成温度を３１５℃以下に下げると、
密着強度は３００ ｉｔに向上するが、サンプル毎にバ
ラツキが多く、引張強度テストにおける剥れモードはＳ
ｔとＮｉの界面からとなυ、量産したり、成るいはライ
フを保障できる状態ではなかった。In the conventional manufacturing method described above, the electrodes 2, 3.7 were formed by electroless N1 plating as described above. However, according to this plating method, depending on the manufacturing conditions, phosphorus may be present in Nl from 1 to 1.
10eI6 included. When electroless N1 plating is fired, a complex compound between phosphorus, St, and Ni is formed at temperatures above 325°C, making it brittle (and at temperatures above 400°C, N1
1 penetrates the N''P junction and the VOC decreases). In this state, even in a tensile strength test, the tensile force is relatively low (for example, a Cu IJ-de with a width of Zttrm is soldered to the pass electrode 3 and 2009 r or less under tension)
Accidents occurred in which the electrode peeled off along with St, during assembly, and during a fatigue life test, the electrode peeled off along with St. As a countermeasure to this, lowering the firing temperature to 315℃ or less will result in
The adhesion strength improved to 300 it, but there was a lot of variation from sample to sample, and the peeling mode in the tensile strength test was S.
From the interface between T and Ni, it was not possible to mass produce it, or to guarantee its life.
一方、無電解メッキを電気メッキに変えるという手段も
あったが、■量産メッキ装置が高価になる、■太陽電池
はウェーハ全面を使用するが表面の電極クリ、ゾ部分に
メッキが着かない、■加湿サイクルテストで電極腐蝕が
生じ、直列抵抗が上昇する、等の不都合があるため、切
替できなかりた。On the other hand, there was a way to change electroless plating to electroplating, but the following problems arose: ■ Mass-production plating equipment would be expensive; ■ Solar cells use the entire wafer surface, but the plating would not adhere to the electrode holes and holes on the surface; ■ Switching could not be performed due to problems such as electrode corrosion and increased series resistance during the humidification cycle test.
この発明の目的は、組立不良（電極剥れ）が無く、効率
が向上し、且つライフテスト中の不良を防止した太陽電
池の製造方法を提供することである。An object of the present invention is to provide a method for manufacturing a solar cell that is free from assembly defects (electrode peeling), improves efficiency, and prevents defects during life tests.
この発明は、従来の無電解Ｎｉメッキの前に、８族貴金
属の１つ以上によるメッキを行なって、所定温度で焼成
し、その後、無電解Ｎｉメッキを行なうようにした太陽
電池の製造方法である。The present invention is a method for manufacturing a solar cell, in which plating with one or more Group 8 noble metals is performed before conventional electroless Ni plating, baking is performed at a predetermined temperature, and then electroless Ni plating is performed. be.
この発明による太陽電池の製造方法は、上記従来の欠点
を除去するために、微細電極２やパス電極３を形成する
従来の無電解Ｎｉメッキの前に、８族貴金属例えばＰｄ
のメッキを厚さ１００〜２０００Ｘ（余り厚いと高価過
ぎ、薄いと効果なし）行ない、メツキレシストを剥離し
てから、温度３８０〜４２０℃の不活性雰囲気で焼成す
る。次に従来の無電解Ｎ１メッキを厚さｌｌｌｆｎ前後
行なう。In order to eliminate the above-mentioned conventional drawbacks, the solar cell manufacturing method according to the present invention uses a group 8 noble metal, such as Pd, before the conventional electroless Ni plating for forming the fine electrodes 2 and the pass electrodes 3.
Plating is performed to a thickness of 100 to 2000X (too thick is too expensive; too thin is ineffective), the plating resist is peeled off, and then fired in an inert atmosphere at a temperature of 380 to 420°C. Next, conventional electroless N1 plating is performed to a thickness of approximately lllfn.
即ち、無電解Ｎｉメッキ中の燐が付着強度を上げるため
に行なう焼成中に、Ｓｔと接触して錯化５−
金物が生じないように、無電解Ｎ１メッキの前にもう１
つのメッキ（例えばＰｄメッキ）を行なうものであるが
、従来、無電解Ｎ１メッキの前に表面置換剤として使用
されているｐａｃｔ２溶液に浸すだけでは数十芙のＰｄ
メッキしかできず、燐とＮｉを隔てるには不充分であり
、ロット毎の再現性が無かった。又、Ｐｄ−Ｎｉの連続
メッキは、無電解Ｎ１メッキ後、焼成が行なわれるため
、焼成炉内の雰囲気ガス中の微量酸素等のためにＮｉ表
面が酸化される等の変化が生じ、無電解Ｎｌメッキ上へ
の半田の乗りが悪く、直列抵抗が高目に出た。従って、
Ｓ１ウエーハに対しＰｄメッキ→焼成→無電解Ｎ１メッ
キという例を見ない工程の採用によって、初めて再現性
のよい密着強度（上記測定条件で５００１１ｒ ）と特
性の両立した太陽電池を得たのである。That is, in order to prevent the phosphorus in the electroless Ni plating from coming into contact with St during firing to increase the adhesion strength and forming a complexed 5-metallic material, another layer of phosphorus was added before the electroless Ni plating.
However, conventionally, just soaking in PACT2 solution, which is used as a surface replacement agent before electroless N1 plating, removes several dozen Pd platings.
Only plating was possible, which was insufficient to separate phosphorus and Ni, and there was no reproducibility from lot to lot. In addition, in continuous Pd-Ni plating, firing is performed after electroless N1 plating, so changes such as oxidation of the Ni surface occur due to trace amounts of oxygen in the atmospheric gas in the firing furnace. Solder did not adhere well to the Nl plating, resulting in high series resistance. Therefore,
By adopting an unprecedented process of Pd plating → firing → electroless N1 plating on the S1 wafer, we were able to obtain, for the first time, a solar cell with both good reproducible adhesion strength (50011r under the above measurement conditions) and characteristics.
尚、この発明の製造方法は、上記以外は従来例と同様ゆ
え、詳細な説明を省略する。Incidentally, the manufacturing method of the present invention is the same as the conventional example except for the above, so detailed explanation will be omitted.
との発明によれば、密着強度が増したため、＝６−
組立不良（電極剥れ）が無くなった。又、接触抵抗が減
ったため、効率が従来の１３．６ｑ６平均値から１４．
５％に向上した。更にライフテスト中に生じた従来の不
良（疲労テストでのリードのＳｔごとの剥れや、加温サ
イクルにおける接触抵抗の増加による効率低下）が解消
した。According to the invention, as the adhesion strength was increased, =6- assembly defects (electrode peeling) were eliminated. Also, because the contact resistance has decreased, the efficiency has increased from the conventional 13.6q6 average value to 14.
This has improved to 5%. Furthermore, the conventional defects that occurred during the life test (lead peeling at each St in the fatigue test and a decrease in efficiency due to an increase in contact resistance during the heating cycle) were eliminated.
上記実施例において、無電解Ｎｉメッキの前にＰｄの酸
化物を熱塩酸で除去したところ、一層密着強度が向上し
く７００〜８００ｇｒ）、又、・ぐラツキも少なくなっ
た。In the above example, when the Pd oxide was removed with hot hydrochloric acid before electroless Ni plating, the adhesion strength was further improved (700 to 800 gr), and the wobble was also reduced.
更に上記実施例では、８族貴金属としてＰｄを例にあげ
たが、Ｐｄ以外にｐｔ ＋ Ｂｈ ｅ Ｉｒ 、 Ｏｓ
。Furthermore, in the above embodiment, Pd was used as an example of the Group 8 noble metal, but in addition to Pd, pt + Bh e Ir, Os
.
Ｒｕ等を使用してもよい。Ru or the like may also be used.
第１図は太陽電池を示す平面図、第２図は従来及びこの
発明の製造方法を説明するために用いる太陽電池を示す
断面図である。
１・・・Ｓｉウェーハ、２・・・微細電極、３・・・パ
ス電極、４・・・Ｎ＋層、５・・・Ｐ”ＢＳＦ層、６・
・・反射防止膜、７・・・電極、８，９・・・半田層。FIG. 1 is a plan view showing a solar cell, and FIG. 2 is a sectional view showing a solar cell used to explain the conventional manufacturing method and the manufacturing method of the present invention. DESCRIPTION OF SYMBOLS 1... Si wafer, 2... Fine electrode, 3... Pass electrode, 4... N+ layer, 5... P''BSF layer, 6...
...Anti-reflection film, 7... Electrode, 8, 9... Solder layer.
Claims (3)
それぞれ形成し、該両層の上にそれぞれ無電解Ｎｉメッ
キによシミ極を設ける太陽電池の製造方法において、 上記無電解Ｎ１メッキの前に、８族貴金属の１つ以上に
よるメッキを厚さ１００Ｘ以上行なって、所定温度で焼
成し、その後、上記無電解Ｎ１メッキを行なうことを特
徴とする太陽電池の製造方法。(1) In a method for manufacturing a solar cell, in which an N+ layer is formed on one side of a St wafer and a P+ layer is formed on the other side, and a stain electrode is provided on each of the two layers by electroless Ni plating, the above electroless N1 plating is performed. 1. A method for manufacturing a solar cell, which comprises plating with one or more Group 8 noble metals to a thickness of 100X or more before firing at a predetermined temperature, and then performing the electroless N1 plating.
化物を熱塩酸で除去する特許請求の範囲第１項記載の太
陽電池の製造方法。(2) The method for manufacturing a solar cell according to claim 1, wherein the oxide of the Group 8 noble metal is removed with hot hydrochloric acid before the electroless N1 plating.
ｒｒ 。 Ｏｓ 、 Ｒｕ等である特許請求の範囲第１項及び第２
項記載の太陽電池の製造方法。(3) The Group 8 noble metals include Pd, Pt, Bh,
rr. Claims 1 and 2 which are Os, Ru, etc.
2. Method for manufacturing a solar cell as described in Section 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58180527A JPS6074583A (en) | 1983-09-30 | 1983-09-30 | Manufacture of solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58180527A JPS6074583A (en) | 1983-09-30 | 1983-09-30 | Manufacture of solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6074583A true JPS6074583A (en) | 1985-04-26 |
Family
ID=16084819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58180527A Pending JPS6074583A (en) | 1983-09-30 | 1983-09-30 | Manufacture of solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6074583A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0529639A (en) * | 1991-07-25 | 1993-02-05 | Sharp Corp | Solar cell |
| WO2002061850A1 (en) * | 2001-01-31 | 2002-08-08 | Shin-Etsu Handotai Co.,Ltd. | Method for producing solar cell and solar cell |
| KR100766943B1 (en) * | 2001-08-17 | 2007-10-16 | 삼성에스디아이 주식회사 | Device for forming electrode of solar cell and method of forming electrode using the device |
-
1983
- 1983-09-30 JP JP58180527A patent/JPS6074583A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0529639A (en) * | 1991-07-25 | 1993-02-05 | Sharp Corp | Solar cell |
| WO2002061850A1 (en) * | 2001-01-31 | 2002-08-08 | Shin-Etsu Handotai Co.,Ltd. | Method for producing solar cell and solar cell |
| KR100766943B1 (en) * | 2001-08-17 | 2007-10-16 | 삼성에스디아이 주식회사 | Device for forming electrode of solar cell and method of forming electrode using the device |
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