JPS607165A - Bonding wire - Google Patents

Bonding wire

Info

Publication number
JPS607165A
JPS607165A JP58114976A JP11497683A JPS607165A JP S607165 A JPS607165 A JP S607165A JP 58114976 A JP58114976 A JP 58114976A JP 11497683 A JP11497683 A JP 11497683A JP S607165 A JPS607165 A JP S607165A
Authority
JP
Japan
Prior art keywords
bonding
wire
less
bonding wire
corrosion resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58114976A
Other languages
Japanese (ja)
Other versions
JPH0423826B2 (en
Inventor
Kenichi Sato
謙一 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP58114976A priority Critical patent/JPS607165A/en
Publication of JPS607165A publication Critical patent/JPS607165A/en
Publication of JPH0423826B2 publication Critical patent/JPH0423826B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01025—Manganese [Mn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0104—Zirconium [Zr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Abstract

PURPOSE:To improve corrosion resistance and to increase bonding strength, by forming a bonding wire from an Al alloy including 0.1-2.0% of Mn, 0.01-0.35% of Zr, less than 0.05% of Fe and less than 0.03% of Si. CONSTITUTION:A bonding wire is manufactured by an alloy, which includes 0.1-2.0% of Mn, 0.01-0.35% of Zr, less than 0.05% of Fe and less than 0.03% of Si and comprises Al for the ret of the above described elements. By adding 0.1-2% of Mn, oxidation of the surface is prevented at the time of fusion when a ball is formed and corrosion resistance is improved. By adding 0.01-0.35% of Zr, the enlargement of crystal grains into rough grains due to heating at the time of ball formation is prevented, and enbrittlement of the bonding wire is prevented. By specifying the rate of inclusion of Fe to be less than 0.05% and that of Si to be less than 0.03%, wire drawing property is improved.

Description

【発明の詳細な説明】 （技術分野） 本発明は、半導体装置、集積回路（ＩＣ）等（以下、Ｉ
Ｃと称す）の電気的接続に用いられるボンディングワイ
ヤに関するものである。Detailed Description of the Invention (Technical Field) The present invention relates to semiconductor devices, integrated circuits (IC), etc. (hereinafter referred to as I
The present invention relates to bonding wires used for electrical connection (referred to as C).

（背景技術） 従来、例えばＴＣチップとパッケージを電気接続するに
は、図に示すように、ｒｃｌの電極２とパッケージ３の
導電回路４の間をボンディングワイヤ５により接続して
いた。(Background Art) Conventionally, in order to electrically connect, for example, a TC chip and a package, a bonding wire 5 was used to connect an RCL electrode 2 and a conductive circuit 4 of a package 3, as shown in the figure.

このボンディングワイヤには極細の金属線が用いられる
。従来Ａｌ線としては線径２５μ近傍のものにはｋｌ−
１％Ｓｉ合金線が使用されていたが、これハＩＣ等への
ボンディングに超音波圧接によるウェッジボンディング
しか使用できず、この方法には方向性があるため、１ボ
ンデイング当シの所要時間が長く、従来のＡｕ線の無方
向性ポールボンディングに対抗できなかった。ここでポ
ールボンディングとは、酸水素炎や放電などの手段によ
シ接続部にポールを形成させてボンディングする方法で
ある。An extremely thin metal wire is used for this bonding wire. Conventional Al wires with a wire diameter of around 25μ have a kl-
1% Si alloy wire was used, but only wedge bonding using ultrasonic pressure welding could be used for bonding to ICs, etc., and because this method has directionality, the time required for one bonding was long. , could not compete with conventional non-directional pole bonding of Au wire. Here, pole bonding is a method of bonding by forming a pole at a connecting portion using means such as oxyhydrogen flame or electric discharge.

一方ｒｃチップの電極はｈｌ又はＡｌ１合金が殆んどで
あｆ）、ｔＪＪ−Ａｕの接続は後工程の加熱時において
金属間化合物が生成して跪くな９、信頼性がＡｌ１−ｐ
、ｌの接続よシ劣っており、又Ａｕの使用にょるコヌト
増加が不可避であった。On the other hand, most of the electrodes of rc chips are made of HL or Al1 alloyf), and the tJJ-Au connection does not yield due to the formation of intermetallic compounds during heating in the post-process9, and the reliability of Al1-P
, l connections are inferior, and an increase in connections due to the use of Au is unavoidable.

又近来、ＩＣのバッキングとしてプラスチックヌが多用
されるようになり、この場合はプラスチックヌを介して
浸入する水分に対する耐食性を考慮する必要がある。In recent years, plastic shells have come into widespread use as backings for ICs, and in this case, it is necessary to consider corrosion resistance against moisture that enters through the plastic shell.

しかし従来のＡｇ−］％Ｓｉ合全Ｓｉはｈｌの耐食性の
向上が望めなく、耐食性が悪い。However, the conventional Ag-]%Si combined Si cannot be expected to improve the corrosion resistance of hl, and has poor corrosion resistance.

（発明の開示） 本発明は、上述の問題点を解決するため成されたもので
、耐食性を向上すると共に、Ａｕ線を用いずにポールボ
ンディングを可能にして、ボンディングの速度を向上し
、コストを低減し得るボンディングワイヤを提供せんと
するものである。(Disclosure of the Invention) The present invention has been made to solve the above-mentioned problems, and it improves corrosion resistance, enables pole bonding without using Au wire, improves bonding speed, and reduces cost. It is an object of the present invention to provide a bonding wire that can reduce the

耐食性ｈ（１合金としてＡｌ−Ｍｎ合金が良く知られて
いる。しかし極細線の伸線加工性およびボンディング特
性を考えると、単なるＡｌ−Ｍｎ合金では伸線加工性、
ボンディングワイヤとしての特性が悪いため、改良が必
要である。特にＡＡ’−Ｍｎ合金はＦｅ、Ｓｉとの共存
により極細線への伸線加工性に有害な晶出物、析出物を
生じ易く、これを抑えるため高純度の地金を用いる必要
がある。Corrosion Resistance h(1) Al-Mn alloy is well known as an alloy. However, considering the wire drawability and bonding properties of ultra-fine wire, a simple Al-Mn alloy has poor wire drawability,
Since it has poor characteristics as a bonding wire, improvement is required. In particular, the AA'-Mn alloy, due to its coexistence with Fe and Si, tends to produce crystallized substances and precipitates that are harmful to the wire drawability into ultra-fine wires, and in order to suppress this, it is necessary to use a high-purity base metal.

又ＪにＭｎ０８１〜２係を添加することにより、従来の
Ａｌ１−］％Ｓｔ合金よりボンディングにおけるポール
形成能を良くすることが分った。このポール形成能の良
くなる原因は、ポール形成時の溶融の際、表面の酸化防
止と表面張力の増大の点でＭｎ添加が効果があるだめと
考えられる。It has also been found that by adding Mn081-2 to J, the pole forming ability in bonding is improved compared to the conventional Al1-]%St alloy. The reason for this improved pole formation ability is thought to be that Mn addition is effective in preventing surface oxidation and increasing surface tension during melting during pole formation.

又ＡＪＩ？　ＫＺｒ　Ｏ，０１〜０３５％添加すること
により、ポール形成時の高温短時間の加熱による結晶粒
の粗大化を防止して、ボンディングワイヤの脆化を防ぎ
、信頼性を高めることが分った。AJI again? It has been found that by adding 01 to 035% of KZrO, coarsening of crystal grains due to high temperature and short time heating during pole formation can be prevented, embrittlement of the bonding wire can be prevented, and reliability can be improved.

即ち、本発明は、Ｍｎ　Ｏ，Ｉ　〜２．０％、Ｚｒ　０
．０１〜０．３５％を含み、Ｆｅを００５％以下、Ｓｉ
を０．０３％以下に規定し、残部が木質的にＪよりなる
合金から成ることを特徴とするボンディングワイヤであ
る。That is, the present invention provides Mn O,I ~2.0%, Zr 0
．． Contains 0.01 to 0.35%, Fe not more than 0.005%, Si
0.03% or less, and the remainder is made of an alloy consisting of J in terms of wood quality.

本発明において、合金中のＭｎは、前述のように耐食性
の向上とボンディングにおけるポール形成能を改良する
ものである。ＭｎＭを０１〜２０％に規定したのは、Ｍ
ｎｏ、］’Ｊ’未満では耐食性、ポール形成能の改善効
果なり、２０％を越えると鋳造時に晶出物を形成する量
が多く、伸線加工性が悪くなるだめである。In the present invention, Mn in the alloy improves corrosion resistance and pole formation ability in bonding as described above. MnM was defined as 01% to 20% because MnM
If it is less than 20%, the corrosion resistance and pole forming ability will be improved, but if it exceeds 20%, a large amount of crystallized matter will be formed during casting, resulting in poor wire drawability.

又本発明において、合金中のＺｒは、高温短時間の加熱
による結晶粒の粗大化とそれによる脆化を防止する効果
が３ｐ、Ｚｒ量０．０１％未満ではその効果なく、０．
８５％を越えると効果が飽和するのみならず、晶出物の
増大を招き、極細線への伸線性を劣化させる。In addition, in the present invention, Zr in the alloy has an effect of preventing coarsening of crystal grains and the resulting embrittlement due to high-temperature and short-time heating at 3p, and has no effect when the amount of Zr is less than 0.01%, and 0.
When it exceeds 85%, not only the effect is saturated, but also the crystallized substances increase and the drawability into ultra-fine wires deteriorates.

又合金中のＦｅを０．０５％以下、Ｓｌを０．０３％以
下に規定するのは伸線加工性を良くするためで、Ｆｅ／
Ｓ　ｉ比を２以上にすることが望ましく、それぞれ上記
限界外となると極細線への加工が難かしくなる。In addition, the reason for specifying Fe in the alloy to 0.05% or less and Sl to 0.03% or less is to improve wire drawability.
It is desirable that the S i ratio be 2 or more, and if it is outside the above limits, it will be difficult to process it into an ultra-fine wire.

従って合金の製造には純度９９．９％以上のに賭金、望
ましくは純度９９．９５％以上のＡＡ）地金を使用する
ことが好ましい。Therefore, it is preferable to use an AA) base metal with a purity of 99.9% or more, preferably 99.95% or more in the production of the alloy.

なお、Ａ４溶融時の酸化を防止してポール形成能を改善
するため、Ｂｅを０．００１〜０．１％の範囲で添加し
ても良い。Note that Be may be added in a range of 0.001 to 0.1% in order to prevent oxidation during A4 melting and improve pole forming ability.

かように構成することによシ、本発明のボンディングワ
イヤは線径２５μ前後の極細線として優れた耐食性、加
工性、ボンディング性を得ることができる。By having such a structure, the bonding wire of the present invention can obtain excellent corrosion resistance, workability, and bonding performance as an ultrafine wire with a wire diameter of about 25 μm.

（実施例） て１ｍした後、溶湯からセラミックフィルターで１０μ
　以上の介在物を除去しながら、ビレットに連続鋳造し
た。(Example) After 1m of heat, filter the molten metal with a ceramic filter for 10μ
While removing the above inclusions, continuous casting was performed into a billet.

このビレットを表面切削した後、熱間押出しによ、！７
１０ｍｍφの線材とした後、皮剥、伸線、熱処理全組合
せて２５μｍφのボンディングワイヤを作成した。After surface cutting this billet, hot extrusion is done! 7
After forming a wire rod with a diameter of 10 mm, a bonding wire with a diameter of 25 μm was created by performing all combinations of peeling, wire drawing, and heat treatment.

得られたボンディングワイヤの製造時の伸線性、耐食性
、ポールボンディングによるボンディング強度は表１に
示す通りである。The drawability, corrosion resistance, and bonding strength by pole bonding of the obtained bonding wire during manufacture are as shown in Table 1.

伸線性は、伸線量１ｙ当りの断線率をＡＪｌｉ−１％Ｓ
ｉ合金の場合を１．　Ｏとして相対値で表わしたもので
あり、耐食性は、温度４５℃、相対湿度９０チにおける
寿命を同じく相対値で表わしたものであり、ボンディン
グ強度は、ボンディングワイヤを放電方式のポールボン
ダーにてＩＣチップとリードフレームの間をボンディン
グして、線の中央において破壊試験をした時の強度を同
じく相対値で表わＩ〜だものである。For wire drawability, the wire breakage rate per y of wire drawing is AJli-1%S.
In the case of i alloy, 1. Corrosion resistance is expressed as a relative value for life at a temperature of 45°C and relative humidity of 90°C. Bonding strength is expressed as a relative value when the bonding wire is bonded to an IC using a discharge type pole bonder. The strength when the chip and the lead frame are bonded and a destructive test is performed at the center of the wire is also expressed as a relative value, I~.

表　１ 表１より、本発明によるＡｌ〜Ｉ５は従来例に比べ、い
ずれも伸線性良好で、ボンディングワイヤとしての耐食
性に優れ、ボンディング強度が高いことが分る。Table 1 From Table 1, it can be seen that Al to I5 according to the present invention all have good wire drawability, excellent corrosion resistance as bonding wires, and high bonding strength compared to the conventional examples.

（発明の効果） 上述のように構成された本発明のボンディングワイヤは
次のような効果がある。(Effects of the Invention) The bonding wire of the present invention configured as described above has the following effects.

（イ）Ａ４合金が、Ｍｎ　Ｏ，１〜２０％を含むことに
よシ、耐食性を向」ニすると共に、ボンディング時のボ
ール形成時に表面の酸化防止と表面張力の増大効果によ
りボール形成能を向」−させ、ボールボンディングを可
能にし、又ＺｒＯ，０１〜０３５％を含むことにより、
ボール形成時の高温短時間の加熱による結晶粒の粗大化
とそれによる脆化を防止するので、ボンディング強度が
高く、耐食性が良好であり、さらにＦｅを００５％以下
、Ｓ−を００３％以下に規定しただめ、伸線加工性が良
く、製造が容易である。(a) The A4 alloy contains 1 to 20% MnO, which improves corrosion resistance and improves ball forming ability by preventing surface oxidation and increasing surface tension during ball formation during bonding. By containing ZrO, 01-035%, it makes ball bonding possible.
This prevents the coarsening of crystal grains and the resulting embrittlement due to high-temperature, short-time heating during ball formation, resulting in high bonding strength and good corrosion resistance.Furthermore, the Fe content is 0.05% or less and the S- content is 0.003% or less. It has a defined diameter, has good wire drawability, and is easy to manufacture.

（ロ）　Ｉ　Ｃ等へのポールボンディングが可能である
ため、ボンディング速度を向上し、又Ａｕ線を使用せず
、かつ耐食性を向上するため、ｒｃ等への信頼性を向上
し、コストを低減する。(b) Pole bonding to ICs, etc. is possible, which improves bonding speed, and since Au wire is not used and corrosion resistance is improved, reliability for RCs, etc. is improved, and costs are reduced. do.

【図面の簡単な説明】[Brief explanation of drawings]

図はＩＣのボンディングの例を示す断面図である。 １・・・ＩＣ１２・電極、３・・パッケージ、４・・・
導電回路、５・・・ボンディングワイヤ。The figure is a sectional view showing an example of IC bonding. 1...IC12/electrode, 3...package, 4...
Conductive circuit, 5...bonding wire.

Claims (1)

【特許請求の範囲】 （＋ｌ　Ｍｎ　Ｏ，１；　〜２．０％、Ｚ　ｒ　０．０
１〜０．８５％を含み、Ｆｅを０．０５％以下、Ｓｉを
００３％以下に規定し、残部が木質的にｈｌよりなる合
金から成ることを特徴とするホンディングワイヤ。 （２）合金が純度９９，９％以上のＡｌ地金を用いて製
造されたものである特許請求の範囲第１項記載のボンデ
ィングワイヤ。 （３）　ボンディングワイヤが、ポールポンド用のもの
である特許請求の範囲第１項又は第２項記載のボンディ
ングワイヤ。□[Claims] (+l Mn O, 1; ~2.0%, Z r 0.0
1 to 0.85%, Fe is specified to be 0.05% or less, Si is specified to be 0.003% or less, and the remainder is woody. (2) The bonding wire according to claim 1, wherein the alloy is manufactured using an Al base metal with a purity of 99.9% or more. (3) The bonding wire according to claim 1 or 2, wherein the bonding wire is for a pole pond. □
JP58114976A 1983-06-24 1983-06-24 Bonding wire Granted JPS607165A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58114976A JPS607165A (en) 1983-06-24 1983-06-24 Bonding wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58114976A JPS607165A (en) 1983-06-24 1983-06-24 Bonding wire

Publications (2)

Publication Number Publication Date
JPS607165A true JPS607165A (en) 1985-01-14
JPH0423826B2 JPH0423826B2 (en) 1992-04-23

Family

ID=14651279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58114976A Granted JPS607165A (en) 1983-06-24 1983-06-24 Bonding wire

Country Status (1)

Country Link
JP (1) JPS607165A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0704765A1 (en) 1994-09-12 1996-04-03 Sumitomo Chemical Company, Limited A photoresist composition comprising a polyfunctional vinyl ether compound

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57164542A (en) * 1981-04-01 1982-10-09 Hitachi Ltd Semiconductor device
JPS5887841A (en) * 1981-11-20 1983-05-25 Tanaka Denshi Kogyo Kk Al wire for bonding of semiconductor element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57164542A (en) * 1981-04-01 1982-10-09 Hitachi Ltd Semiconductor device
JPS5887841A (en) * 1981-11-20 1983-05-25 Tanaka Denshi Kogyo Kk Al wire for bonding of semiconductor element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0704765A1 (en) 1994-09-12 1996-04-03 Sumitomo Chemical Company, Limited A photoresist composition comprising a polyfunctional vinyl ether compound

Also Published As

Publication number Publication date
JPH0423826B2 (en) 1992-04-23

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