JPS6059784A - Manufacture of photoelectric conversion semiconductor device - Google Patents
Manufacture of photoelectric conversion semiconductor deviceInfo
- Publication number
- JPS6059784A JPS6059784A JP58168554A JP16855483A JPS6059784A JP S6059784 A JPS6059784 A JP S6059784A JP 58168554 A JP58168554 A JP 58168554A JP 16855483 A JP16855483 A JP 16855483A JP S6059784 A JPS6059784 A JP S6059784A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- conductive film
- region
- photoelectric conversion
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 56
- 238000006243 chemical reaction Methods 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000013078 crystal Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 3
- 235000008708 Morus alba Nutrition 0.000 claims 1
- 240000000249 Morus alba Species 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000005520 cutting process Methods 0.000 abstract description 2
- 102100037676 CCAAT/enhancer-binding protein zeta Human genes 0.000 abstract 1
- 101000880588 Homo sapiens CCAAT/enhancer-binding protein zeta Proteins 0.000 abstract 1
- 239000010408 film Substances 0.000 description 17
- 238000000605 extraction Methods 0.000 description 13
- 239000004020 conductor Substances 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
この発明は、光照射により光起電力ｉ発生ずるアモルフ
ァス半導体を含む非単結晶半導体を絶縁表面を有する基
板上に設けられた光電変換素子（単に素子ともいう）を
複数個電気的に直列接続して、高い電圧の発生が可能な
光電変換装置における外部引出し電極の構造に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a plurality of photoelectric conversion elements (also simply referred to as elements) provided on a substrate having an insulating surface, which includes a non-single crystal semiconductor including an amorphous semiconductor that generates a photovoltaic force i upon irradiation with light. The present invention relates to the structure of an external lead electrode in a photoelectric conversion device that can be electrically connected in series to generate a high voltage.
この発明は、複数の素子間の連結に必要な面積を従来の
マスク合ね−Ｕ方式の１／１０〜１ ／１００にするた
め、レーザスクライブ（以下ＬＳという）方式を用いた
ことを特徴とする。The present invention is characterized by using a laser scribing (hereinafter referred to as LS) method in order to reduce the area required for connecting multiple elements to 1/10 to 1/100 of the conventional mask joining-U method. do.
この発明はＬＳ方式により、外部引出し電極部を何等の
マスクを用いることなしに製造するための構造を示す。This invention shows a structure for manufacturing an external extraction electrode part without using any mask using the LS method.
この発明はこの外部引出し電極の形成に際し、その光電
変換素子とまったく同一工程即ち余分の工程を用いるこ
となしに製造したものである。In the present invention, the external extraction electrode is manufactured in exactly the same process as that of the photoelectric conversion element, that is, without using any extra process.
さらに本発明においては、２つの一刻をなす外部引出し
電極部において、この電極部への連結のための外部接続
体の加圧圧力が強すぎて、その下の半導体を貫通し、さ
らにその下の第１の導電＋Ａ料と接触しても実用上何等
問題ないようにこの電極部の構造を設けたことを特徴と
している。Furthermore, in the present invention, in the two external lead-out electrode parts, the pressurizing pressure of the external connecting body for connection to the electrode part is too strong, penetrating the semiconductor below it, The structure of this electrode portion is characterized in that it does not cause any practical problems even if it comes into contact with the first conductive +A material.
この発明は、連結部での電気的結合を第１の素子の第１
の電極を構成する透光性導電膜（ＣＴＦという）の側面
に第２の素子の第２の電極を延在して密接せしめ、サイ
トコンタクト構造としたことを特徴としている。このた
め第１および第２の素子の半導体を分離する開溝は、第
１の素子の第１の電極位置上に渡って設け、製造に際し
、この開溝が揺らいでも隣合う素子とショートすること
がないよう冗長度（余裕度）を与えることを特徴として
いる。This invention provides electrical coupling at the connecting portion to the first element of the first element.
The second electrode of the second element is extended and brought into close contact with the side surface of a transparent conductive film (CTF) constituting the electrode, forming a site contact structure. For this reason, the groove that separates the semiconductors of the first and second elements is provided over the first electrode position of the first element, so that even if this groove fluctuates during manufacturing, it will not cause a short circuit with an adjacent element. It is characterized by providing redundancy (margin) so that there is no problem.
この発明は第１の外部引出し電極部において、その隣に
位置する素子（第１の素子）の第２の電極から延在した
同一材料で導体のバットを設けるとともに、この下の電
極部に位置する半導体とその下の第１の導電膜は第１の
素子の第１の電極と電気的に開溝により離間させている
。この開溝により、外部接続体の圧力が第２の導電膜に
強くかかり、これとその下の第１の導電膜とがショート
しても、第１の素子の特性を劣化または破損させること
がないという特徴を有する。This invention provides a conductor butt made of the same material extending from the second electrode of the element (first element) located next to it in the first external extraction electrode part, and a conductor butt that is located in the electrode part below this. The semiconductor and the first conductive film thereunder are electrically separated from the first electrode of the first element by an open groove. Due to this open groove, the pressure of the external connection body is strongly applied to the second conductive film, and even if this and the first conductive film below it short, the characteristics of the first element will not deteriorate or be damaged. It has the characteristic that there is no
またこの発明の第２の外部引出し電極部において、第２
の導電膜によるバットはその隣に作製する光電変換素子
の第１の電極とその側面において電気的に連結して設け
られるとともに、この隣の素子の第２の電極と電気的に
開溝により離間して設けることにより、素子の第２の導
電膜と同一導電材料により第２の外部引出し電極部を設
りている。Further, in the second external extraction electrode section of the present invention, the second
The conductive film bat is electrically connected to the first electrode of the photoelectric conversion element to be fabricated next to it on its side surface, and is electrically separated from the second electrode of the adjacent element by an open groove. By providing this, the second external lead electrode portion is made of the same conductive material as the second conductive film of the element.
かくすることにより、第２の電極部における外部接続体
との連結のための加圧圧力が強（、その下の０．５ μ
の厚さしかない半導体を貴き、第１の導電膜とバンドが
ショートしても実用上まった（支障がないという特長を
有する。By doing this, the pressurizing pressure for connection with the external connector in the second electrode part is strong (0.5 μm below it).
It has the advantage that even if the band is short-circuited with the first conductive film, there is no problem in practical use.
即もこの発明はマスクレスのＬＳ方式であって、信頼性
において特に劣化しやすい外部引出し電極部での連結を
より確実に行うことを可能にした光電変換装置の作製方
法に関する。Specifically, the present invention relates to a method for manufacturing a photoelectric conversion device using a maskless LS method, which makes it possible to more reliably connect an external extraction electrode portion, which is particularly susceptible to deterioration in reliability.
この発明ではこのＬＳ方式を用いることにより、合わせ
マークを基準としてこのスクライブされるアドレスを予
めコンピュータ（マイクロ・コンピュータ）のメモリに
記憶させておくことにより、従来より知られたマスク合
わせ方式で必要なマスクのずれ、そり、合わせ精度に対
する製造歩留りの低下等のすべての製造での（Ｉｌｉ格
増、歩留り減の原因を一気に排除せしめたことを特徴と
する。In this invention, by using the LS method, the address to be scribed using the alignment mark as a reference is stored in advance in the memory of a computer (microcomputer), thereby eliminating the need for the conventional mask alignment method. It is characterized by eliminating at once all causes of increase in manufacturing yield such as mask deviation, warping, and decrease in manufacturing yield due to alignment accuracy.
従来、光電変換装置（に）、下単に装置という）即ち同
一基板上に複数の素子を配置し、それらを集積化または
ハイブリ・７ド化した装置はその実施例が多く知られて
いる。Conventionally, many examples of photoelectric conversion devices (hereinafter simply referred to as "devices"), that is, devices in which a plurality of elements are arranged on the same substrate and integrated or hybridized, are known.
例えば特開昭５５ｊ４９９４、特開昭５５−１２４２７
４さらに本発明人の出願になる特願昭５４−９００９７
／９００９Ｂ／９００９９ （昭和５４．７．１６
’）が知られている。For example, JP-A-55J4994, JP-A-55-12427
4 Furthermore, patent application No. 54-90097 filed by the present inventor
/9009B/90099 (Showa 54.7.16
')It has been known.
例えば本発明人の出願になる特許願は、半導体を５ｉｘ
ＣＩ−×Ｓｉのへテロ接合とし、単に他のアモルファス
・シリコン半導体を用いる場合と異ならせており、さら
にこの半導体として、アモルファス構造以外に微結晶構
造を含む水素またはノーロゲン元素が添加されたＰＮま
たはＰＩＮ接合を少なくとも１つ有する非単結晶半導体
を集積化またはハイソリツド化したものである。For example, the patent application filed by the present inventor describes the semiconductor 5ix
This is a CI-xSi heterojunction, which is different from the case where other amorphous silicon semiconductors are used.Furthermore, this semiconductor is a PN or a PN to which hydrogen or a norogen element containing a microcrystalline structure is added in addition to the amorphous structure. A non-single crystal semiconductor having at least one PIN junction is integrated or made high solid.
本発明はかかる集積化構造をマスクを用いずに成就する
ものであるが、この集積化の際、余分の工程かかかりや
すいパッド部（外部引出し電極部）の！Ａ造において、
集積化工程と同一工程で成就するものである。The present invention achieves such an integrated structure without using a mask, but during this integration, the pad portion (external lead-out electrode portion) which tends to require extra steps! In A construction,
This is accomplished in the same process as the integration process.
このため、本発明の光電変換装置特に薄膜帯の光電変換
装置にあっては、それぞれの薄膜層である電極用導電層
、また半導体層はともにそれぞれ５００人〜１μとＦ＃
膜であり、ＬＳ方式を用いることにより、まったくマス
ク合ねせを必要としないで作製することが可能となった
。Therefore, in the photoelectric conversion device of the present invention, particularly in the thin film band photoelectric conversion device, each of the thin film layers, the conductive layer for electrodes and the semiconductor layer, each has a thickness of 500 to 1 μm and an F#.
It is a film, and by using the LS method, it has become possible to manufacture it without requiring any mask alignment.
このＬＳ方式においては１０〜１００ μ例えば５０μ
のｌ〕の線状の開溝により２つの領域を分離することが
可能である。しかしこのＬＳ方式においては、面として
の選択的な除去がきわめて困ケ１１であり、製造価格を
上昇させてしまう。さらにＬＳ方式においては直線状の
線または点を有せしめることば生産性を大きくして好ま
しいが、曲線を複雑に走査すると走査スピードが遅くな
り、価格の」二昇をもたらす。このことによりＬＳ方式
におけるバンド作製および集積化構造を作る際に、直線
状でかつ線状の開溝によって成就することが工業的に生
産性を高め、きわめて重要である。本発明はかかる牛島
長を十分用いることによる、光電変換装置の周辺部即ち
バント部、側端部の製造方法に関する。In this LS method, 10 to 100μ, for example 50μ
It is possible to separate the two regions by a linear groove. However, in this LS method, it is extremely difficult to selectively remove surfaces11, which increases the manufacturing cost. Further, in the LS method, it is preferable to have straight lines or points because it increases productivity, but if a curved line is scanned in a complicated manner, the scanning speed becomes slow and the cost increases. Therefore, when manufacturing a band and an integrated structure in the LS method, it is extremely important to achieve industrial productivity by using straight and linear open grooves. The present invention relates to a method of manufacturing a peripheral portion, that is, a bunt portion and a side end portion of a photoelectric conversion device, by sufficiently using the Ushijima length.
本発明においては、このスクライブ工程がマイクロ・コ
ンピュータを併用することによりきわめて簡単かつ高精
度であり、装置の製造コストの低下をもたらした。その
ため５００円／Ｗの製造も可能となり、その製造規模の
拡大により１００〜２００円／Ｗも可能となるというき
わめて画期的な光電変換装置を提供することによる。In the present invention, this scribing process is extremely simple and highly accurate due to the combined use of a microcomputer, resulting in a reduction in the manufacturing cost of the device. Therefore, it is possible to manufacture a photoelectric conversion device at a price of 500 yen/W, and by expanding the manufacturing scale, it becomes possible to produce a photoelectric conversion device at a price of 100 to 200 yen/W.
さらに本発明においてはこのレーザスクライブ工程を用
いるに加えて、そのスクライブラインの合わせ精度に冗
長く余裕）度をもたせたごとが重要である。そのため隣
合った素子間の第１の電極（下（Ｆ、’ｌ ）と他の素
子の第２の電極（上側電極）とが第２の電極より延在し
たリードにより第１の電極とその側面において電気的に
連結させることにより、スクライブラインの開溝の位置
に冗長度を持たせることができた。Furthermore, in the present invention, in addition to using this laser scribing process, it is important to provide a certain degree of margin for alignment accuracy of the scribe lines. Therefore, the first electrode (lower (F,'l)) between adjacent elements and the second electrode (upper electrode) of another element are connected to the first electrode by a lead extending from the second electrode. By electrically connecting them on the side, it was possible to provide redundancy in the positions of the open grooves of the scribe lines.
第１図は本発明を用いた光電変換装置のパネル（５０）
を上面より示したものである。Ｉ！１１ち、図面におい
て、光電変換素子（３１）、＜１１）は連結部（１２）
を経て直列に連結して集積化させている。外部引出し電
極は（５）、（４５）が両端部に設＆Ｊられている。Figure 1 shows a panel (50) of a photoelectric conversion device using the present invention.
is shown from the top. I! 11. In the drawing, the photoelectric conversion element (31), <11) is the connecting part (12)
They are integrated by connecting them in series. The external lead electrodes (5) and (45) are provided at both ends.
パネルの上端、下端に枠と電気的にショートしないよう
に分離溝（６２）が設けられている。Separation grooves (62) are provided at the upper and lower ends of the panel to prevent electrical short-circuiting with the frame.
第１１１のパネルにおいて、その大きさは２０ｃｍ Ｘ
６０ｃｍ、 ４０ｃｍＸ１２０ｃｍ、４０ｃｍＸ６０ｃ
ｍ等の任意の大きさを設計によって得ることができる。In the 111th panel, its size is 20cm x
60cm, 40cmX120cm, 40cmX60c
An arbitrary size such as m can be obtained by design.
第１図における（Ａ−Ａ’）の縦断面図を第２図に示し
ている。また、（Ｂ−−Ｂ’）の縦…ｉ面図を第３図（
Ａ）、（Ｃ−Ｃ’）の縦断面図を第３図（Ｂ）に示して
いる。さらに（Ｄ−Ｄ’）の縦断面図を第４図（Ｂ）に
、（Ｅ’）を第４図（Ａ）に拡大して示している。番号
はそれぞれに対応させている。FIG. 2 shows a vertical cross-sectional view taken along the line (AA') in FIG. 1. Also, the longitudinal...i-plane view of (B--B') is shown in Figure 3 (
A) and (CC') longitudinal cross-sectional views are shown in FIG. 3(B). Furthermore, a vertical cross-sectional view along line (D-D') is shown in FIG. 4(B), and (E') is shown in enlarged view in FIG. 4(A). The numbers correspond to each other.
第２図は第１図Ａ−Ａ’の縦断面一を示す。即ち、本発
明の製造工程を示す縦断面図である。FIG. 2 shows a longitudinal section taken along line AA' in FIG. That is, it is a longitudinal sectional view showing the manufacturing process of the present invention.
図面において絶縁表面を有する基板例えば透光性基板（
１）即ちガラス板（例えば厚さ１．２ ｍｍ、長さく図
面では左右方向） ６０ｃｍ、 ｌＪ２０ｃｍ）を用い
た・さらにこの上面に全面にわたって透光性導？ｈ膜（
列えばＩＴＯ（１５１５００人）＋ＳｎＯよ（２００〜
４００ 人）またはハロゲン元素が添加された酸化スス
を主成分とする透光性導電膜（１５００〜２０００人）
を真空蒸着法、ＬＰ ＣＶＤ法、プラズマＣＶＤ法また
はスプレー法により形成させた。この第１の導電ｊ模は
外部引出し電極部においては不要であるが、マスクを用
いた製造価格の上昇を避けた。かくして電極領域（５）
上にもＣＴＦが形成される。この後、この基板の下側ま
たは上側より、ＹＡＧ レーザ加工機（日本レーザ製）
により０．５〜３Ｗ出力を加え、スポット径３０〜７０
μφ代表的には５０μφをマイクロ・コンピュータを制
御して照射し、その走査によりスクライブライン用開溝
（１３）、（ｉ３’）を形成させ、各素子領域間および
外部引出し電極領域を分割した。そして第１の電極（３
７）を作製した。In the drawings, a substrate with an insulating surface, such as a transparent substrate (
1) In other words, a glass plate (for example, 1.2 mm thick, 60 cm in length in the horizontal direction in the drawing, 20 cm in length) is used.Furthermore, a light-transmitting light guide is provided over the entire upper surface of this plate. h membrane (
If you line up, ITO (151,500 people) + SnO (200~
400 people) or a transparent conductive film whose main component is soot oxide added with a halogen element (1500-2000 people)
was formed by a vacuum evaporation method, an LP CVD method, a plasma CVD method, or a spray method. Although this first conductive pattern is not necessary in the external lead electrode section, an increase in manufacturing cost due to the use of a mask was avoided. Thus the electrode area (5)
CTF is also formed on top. After this, from the bottom or top of this board, use a YAG laser processing machine (manufactured by Nippon Laser).
Add 0.5~3W output and spot diameter 30~70
Typically, 50 μΦ was irradiated under the control of a microcomputer, and by its scanning, grooves (13) and (i3′) for scribe lines were formed to divide each element region and external extraction electrode region. and the first electrode (3
7) was produced.
この第１のＬＳにより形成された開溝（１３）、＜１３
’）は巾約５０μ長さ２０ｃｍとし、深さは第１の電極
それぞれを完全に切断分離した。この長さは基板第１図
における上端から下端まで通り抜しノさせ、開溝の形成
の走査スピードを５ｍ／分と速くさせた。Open groove (13) formed by this first LS, <13
') was approximately 50 μm in width and 20 cm in length, and the depth was such that each of the first electrodes was completely cut and separated. This length was made to pass through the substrate from the upper end to the lower end in FIG. 1, and the scanning speed for forming the open groove was increased to 5 m/min.
かくして外部引出し電極領域（５）、第１の素子領域（
３１）および第２の素子領域（１］）を構成させた。こ
れらの素子の１１１は１０〜２０ｍｍとした。In this way, the external extraction electrode region (5), the first element region (
31) and the second element region (1]) were constructed. The length of these elements 111 was 10 to 20 mm.
この後この」二面にプラズマＣＶＤ法またはＬＰ ＣＶ
Ｄ法、光ＣＶＤ法、光プラズマＣＶＤ法、ＬＴ ＣＶＤ
法（１１０ＭＯＣＶＤ法ともいう）により光照射により
光起電力を発生させる非単結晶半導体特にＰＮまたはＰ
ＩＮ接合を有する非単結晶半導体Ｍ（３）を０．２〜１
．０μ代表的には０，４〜０．６μの厚さに形成させた
。After this, plasma CVD method or LP CV is applied to the two surfaces.
D method, optical CVD method, optical plasma CVD method, LT CVD
A non-single crystal semiconductor, especially PN or P, which generates photovoltaic force by light irradiation by
The non-single crystal semiconductor M(3) having an IN junction is 0.2 to 1
．． The thickness is typically 0.4 to 0.6 μm.
−その代表例はＰ型半導体（ＳｉｘＣ１−＞＜ ｘ ＝
０．８５０〜１５０人＞（４２）−−１型アモルファス
またはセミアモルファスのシリコン半導体（０，４〜０
．６μバ４３）−Ｎ型の微結晶（１００〜２００ 人）
またば５ｉｘＣ１−）＜（０＜Ｘ＜１ 例えばＸ＝０．
９）の半導体（４４）よりなる１つのＰＩＮ接合を有す
る非単結晶半導体（３）とした。さらにこの半導体とし
てＰ型半導体（ＳｉｘＣ＋−ｘ） ｌ型Ｓｔ半導体−Ｎ
型Ｓｉ半導体−Ｐ型Ｓｉ半導体−Ｉ型５ｉｘ（ｚｅ’ｌ
−ｘ半導体−Ｎ型半導体よりなる２つのＰＩＮ接合と１
つのＰＮ接合を有するタンデム型のＰＩＮＰＩＮ・・・
ＰＩＮ接合の半導体（３）としてもよい。-A typical example is a P-type semiconductor (SixC1->< x =
0.850 to 150 > (42) -- Type 1 amorphous or semi-amorphous silicon semiconductor (0.4 to 0
．． 6μ Bar43) - N-type microcrystals (100-200 people)
Also, 5ixC1-)<(0<X<1 For example, X=0.
A non-single crystal semiconductor (3) having one PIN junction made of the semiconductor (44) of 9) was used. Furthermore, as this semiconductor, a P-type semiconductor (SixC+-x), an l-type St semiconductor-N
type Si semiconductor - P type Si semiconductor - I type 5ix (ze'l
-x semiconductor - two PIN junctions made of N-type semiconductor and 1
Tandem type PINPIN with two PN junctions...
It may also be a PIN junction semiconductor (3).
かかる非単結晶半導体（３）をＣＴＦ （２）および開
溝（１３＞、＜１３’＞の全面にわたって均一の１模厚
で形成させた。さらに第２図（Ｂ）に示されるごとく、
第１の開溝（１３）の左側に第２の開溝（１８）を５０
μの巾に１００〜５００μの距離（１７）をわたらせて
第２のＬＳＩ程により形成させた。このレーザはガラス
（１）の下方向またはこの基板の上方のいずれからも行
ってよい。Such a non-single crystal semiconductor (3) was formed to a uniform thickness over the entire surface of the CTF (2) and the open grooves (13>, <13'>. Furthermore, as shown in FIG. 2(B),
A second open groove (18) is placed on the left side of the first open groove (13).
It was formed by the second LSI process over a distance (17) of 100 to 500 μ over a width of μ. The laser may be applied either from below the glass (1) or from above the substrate.
か（して第２の開溝（１８）は第１の電極の側面（８＞
、（９）を露出させた。この第２の開溝により形成され
た第１の電極の右側の側面（９）の存在は、第１の電極
（３７）の側面（１６）より左側の第１の素子の第１の
電極位置上にわたって設けられていることが特徴である
。そして第２図（Ｂ）に示されるごと（、第１の電極（
３１）の内部に入ってしまうことにより、第１の電極の
側面を（８）３（９）と露出せしめている。かくするこ
とにより第１の素子の第１の電極（３７）の一部が第２
の開／＋’５の右側に残存している。かかる残存領域が
ない場合、レーザ光の高熱（〜２０００℃）によりＣＴ
Ｆ（２）よりもはるかに加工されやすいため、第１の開
溝（１３）に充填された半導体が吹きｙｌｕんでしまう
。そのため第１および第２の素子の第１の電極間のアイ
ソレイションが不可能になる。このこ去より第２図（Ｂ
）に示すごとく、第２の開溝が第１の電極の内部に入っ
て設けられていることはきわめて重要である。この（９
）の部分に残存するＣＴＦは５０〜５００μの中を有せ
しめた。このレーザ光が１〜５Ｗで多少強ずぎてこのＣ
ＴＦ （３７）の深さ方向のすべてを除去してしまい、
その結果側面（８）に第２図＜Ｃ＞で第２の電極（３８
）を密接させても実用上何等問題はない。即らレーザ光
の出力パルスの強さに余裕を与えることができることが
本発明の工業的応用の際きわめて重要である。(Then, the second groove (18) is located on the side surface (8>) of the first electrode.
, (9) were exposed. The presence of the right side surface (9) of the first electrode formed by the second open groove causes the first electrode position of the first element to be on the left side of the side surface (16) of the first electrode (37). It is characterized by being placed over the top. Then, as shown in FIG. 2(B), the first electrode (
31), the side surfaces of the first electrode are exposed as (8), 3, and (9). By doing so, a part of the first electrode (37) of the first element becomes
It remains on the right side of the opening/+'5. If there is no such remaining area, the high heat (~2000°C) of the laser beam will cause CT
Since it is much easier to process than F(2), the semiconductor filled in the first groove (13) will be blown away. Therefore, isolation between the first electrodes of the first and second elements becomes impossible. From now on, Figure 2 (B
), it is very important that the second groove is provided inside the first electrode. This (9
) The remaining CTF was in the range of 50 to 500μ. This laser beam is 1~5W and is a little strong
All of the depth of TF (37) was removed,
As a result, a second electrode (38
) in close contact with each other, there is no practical problem. That is, it is extremely important for the industrial application of the present invention to be able to provide a margin for the intensity of the output pulse of the laser beam.
第２図において、ざらにこの上面に第２図（Ｃ）に示さ
れるごとく、裏面の第２の電極（４）を形成し、さらに
第３のＬＳ法により、切断分離用の第３の開ａ（２０）
を設けた。In FIG. 2, as shown in FIG. 2(C), a second electrode (4) on the back surface is roughly formed on this top surface, and a third opening for cutting and separation is formed using the third LS method. a(20)
has been established.
この第２の電極（４）は透光性導電Ｉ９を７００〜１４
００人の厚さにＩＴＯ（酸化インジュームスズ）により
形成し、さらにその上面に反射性金属の銀、アルミニュ
ームまたはクロムを３００〜３０００人の厚さに形成し
た。さらにその上面にアルミニューム、銅またはアルミ
ニュームとニッケルとの２層膜を形成させた。例えばＪ
ＴＯを１０５０人、クロムを５００人、銅を１０００人
、さらにニッケルを１５００人の３層構造とした。この
ＩＴＯとクロムは裏面側での入射光（１０）の反射を促
し、６００〜８００μｍの長波長光を有効に光電変換さ
せるためのものである。さらにニッケルは外部引出し電
極部（５）においてバンド（４９）と外部接続体（２３
）との密着性を向上させるためのものである。これらは
電子ビーム蒸着法またはプラズマＣＶＤ法を用いて半導
体Ｎ（３）を劣化させる３００℃以下の温度で形成させ
た。This second electrode (4) has a translucent conductive I9 of 700 to 14
It is made of ITO (indium tin oxide) to a thickness of 300 to 3,000 people, and a reflective metal such as silver, aluminum, or chromium is formed on the top surface to a thickness of 300 to 3,000 people. Furthermore, a two-layer film of aluminum, copper, or aluminum and nickel was formed on the upper surface. For example, J
It has a three-layer structure of 1050 TO, 500 chromium, 1000 copper, and 1500 nickel. The ITO and chromium are used to promote reflection of incident light (10) on the back surface side and to effectively photoelectrically convert long wavelength light of 600 to 800 μm. Furthermore, nickel is applied to the band (49) and the external connection body (23) in the external extraction electrode part (5).
) to improve adhesion with These were formed using an electron beam evaporation method or a plasma CVD method at a temperature of 300° C. or lower, which degrades the semiconductor N(3).
このＩＴＯは半導体（３）と裏面電極（４）との化学反
応による信頼性低下の防止、即ち信頼性の向上にも役立
っている。This ITO also serves to prevent a decrease in reliability due to a chemical reaction between the semiconductor (3) and the back electrode (4), that is, to improve reliability.
かくのごとき裏面電極をレーザ光を上方より照射して第
２の電極を切断分用Ｉして第３の開溝（２０）（＋１Ｊ
５０ ／Ｊ ）を形成した場合を示している。このレー
ザ光は半導体特に上面に密接するＮまたはＰ型の半導体
層をえくりだしく４０）隣合った第１の素子（３１入第
２の素子（１１）間の開溝部での残存金属または導電性
半導体によるクロストーク（リーク電流）の発生を防止
した。The back electrode is irradiated with a laser beam from above to cut the second electrode and form a third groove (20) (+1J).
50/J) is shown. This laser beam excites the semiconductor, especially the N- or P-type semiconductor layer that is in close contact with the top surface of the semiconductor (40). This prevents crosstalk (leakage current) from occurring due to conductive semiconductors.
特にこの半導体（３）がＰ型半導体層（４２＞、 ｒ型
半導体層（４３）、Ｎ型半導体層 （４４）と例えば１
つのＰＩＮ接合を有し、このＮ型半導体層が微結晶また
は多結晶構造を有する場合、その電気伝導度は１〜２０
０りΩｃ ｍ ）−’と高い値を持つ。このためＮ型導
電性半導体屓をえぐり出して除去し、凹部に真性半導体
を設けてリーク電流発生を防止することはきわめて重要
であった。さらにこの■型半導体の底部（４０）を酸化
して酸化珪素とするとざらにこのリークの程度を減少さ
せることができた。このえぐりだしはＩ型半導体層を越
え、第１の電極用のＣＴＦにまで達成しないことが好ま
しい。レーザ光により開溝形成を第２の電極のみでな（
、その下側の０．２μ以上ある■型半導体層の厚さ分の
余裕を開溝部（２０）の形成の作業工程にもたせること
が工業上重要である。In particular, this semiconductor (3) has a P-type semiconductor layer (42>), an R-type semiconductor layer (43), an N-type semiconductor layer (44), and, for example, 1
When the N-type semiconductor layer has a microcrystalline or polycrystalline structure, its electrical conductivity is 1 to 20.
It has a high value of 0Ωcm)-'. For this reason, it is extremely important to scoop out and remove the N-type conductive semiconductor layer and provide an intrinsic semiconductor in the recessed portion to prevent leakage current from occurring. Furthermore, by oxidizing the bottom part (40) of this ■-type semiconductor to silicon oxide, the degree of this leakage could be reduced to a large extent. It is preferable that this gouging does not go beyond the I-type semiconductor layer and do not reach the CTF for the first electrode. Grooves are formed using laser light only on the second electrode (
, It is industrially important to provide an allowance for the thickness of the ■-type semiconductor layer, which is 0.2 μ or more below it, in the process of forming the open groove portion (20).
かくして第２図（Ｃ）に示されるごとく、複数の素子（
３１）、（１１）を連結部（１２）で直列接続した。Thus, as shown in FIG. 2(C), a plurality of elements (
31) and (11) were connected in series at the connecting part (12).
同時に外部引出し電極（５）を何等余分の工程を加える
ことなしに作製することができ、光電変換装置としての
ＬＳによる低価格製造が可能となつ −た。At the same time, the external extraction electrode (5) could be manufactured without adding any extra steps, and low-cost manufacturing using LS as a photoelectric conversion device became possible.
第２図（Ｄ）はさらに本発明を光電変換装置として完成
させんとしたものであり、即ちパッシベイション膜とし
てプラズマ気相法により窒化珪素膜（２１）を５００〜
５０００人の厚さに形成させ、各素子間のリーク電流の
発生を防いだ。さらに外部引き出し端子（２３）を周辺
部（５）にて設けた。これらにポリイミド、ポリアミド
、カブ１〜ンまたはエポキシ等の有機樹脂（２２）を充
填した。FIG. 2(D) shows the attempt to further complete the present invention as a photoelectric conversion device, that is, a silicon nitride film (21) with a thickness of 500 to
It was formed to a thickness of 5,000 mm to prevent leakage current between each element. Furthermore, an external lead-out terminal (23) was provided at the peripheral portion (5). These were filled with an organic resin (22) such as polyimide, polyamide, carboxylic acid, or epoxy.
かくして照射光（１０）に対し、この実施例のごとき基
板（６０ｃｍ Ｘ ２０ｃｍ）において各素子をｒ１０
４．３５ｍｍ、連結部のｌ’ｌ］１５０μ、外部引出し
電極部の中１０ｍｍ、周辺部４ｍｍにより、有効面積（
１９２ｍｍ Ｘ １４．３５ｍｍ Ｘ ４０段 １１０
２ｃｎ！即ち９１．８％）を得ることができた。その結
果、セグメントが１０．６％の変換効率を有する場合、
パネルにて９．７％（ＡＭＩ （１００ｍＷ ／ｃｎｌ
））にて１１．６Ｈの出力電力を有せしめることができ
た。Thus, for the irradiation light (10), each element on the substrate (60 cm x 20 cm) as in this example was set at r10.
4.35 mm, the connecting part l'l] 150 μ, the inside of the external extraction electrode part 10 mm, and the peripheral part 4 mm, the effective area (
192mm x 14.35mm x 40 stages 110
2cn! That is, 91.8%) was able to be obtained. As a result, if the segment has a conversion efficiency of 10.6%,
9.7% (AMI (100mW/cnl) at panel
)) was able to provide an output power of 11.6H.
さらに金属マスクをまったく用いないため、大面積パネ
ルの製造工程において何等の工業上の支障がなく、大電
力発生用の大面（Ｂ低価格大量生産用にきわめて適して
いる。Furthermore, since no metal mask is used at all, there is no industrial problem in the manufacturing process of large-area panels, making it extremely suitable for large-area (B) low-cost mass production for generating large amounts of power.
さらにまた連結部に関しては、第１の電極の側面で隣の
素子の第２の電極と連結を行うことにより、この連結部
（コンタクト部）の必要面積を従来方法に比べて１／１
０以下に十分少な（させ得た。Furthermore, regarding the connection part, by connecting the first electrode with the second electrode of the adjacent element on the side surface, the area required for this connection part (contact part) can be reduced to 1/1 compared to the conventional method.
It was sufficiently small (it was possible to make it less than 0).
この結果、パネルの有効面積の向上に役立つことができ
た。As a result, the effective area of the panel could be improved.
以上、ＹＡＧレーザのスボソ１一層をその出力０．３〜
５Ｗ（３０μ）、０．５〜８Ｗ（５０μ）で用いた場合
であるが、さらにそのスポット径を技術思想において小
さくすることにより、この連結部をより小さく、ひいて
は光電変換装置としての有効面積をより向上させること
ができるという進歩性を有している。As mentioned above, the output of the YAG laser 1 layer is 0.3 ~
5W (30μ) and 0.5 to 8W (50μ), but by further reducing the spot diameter based on the technical concept, this connection part can be made smaller and the effective area as a photoelectric conversion device can be reduced. It has an inventive step in that it can be further improved.
第３図は本発明の外部引出し電極（５）、＜４５）を第
１図（Ｂ−Ｂ’）、＜ｃ−−ｃ’＞に対応してその縦断
面図で示す。FIG. 3 shows the external extraction electrode (5), <45) of the present invention in a longitudinal sectional view corresponding to FIG. 1 (BB'), <c--c'>.
第３図（Ａ）は第１の外部引出し電極部の構造を示し、
第２図に対応した製造工程を有している。FIG. 3(A) shows the structure of the first external extraction electrode part,
The manufacturing process corresponds to that shown in FIG.
図面において、外部引出し電極部（５）は外部接続体（
４７）に接触するバンド（４９）を有し、このバンド（
４９）は隣の素子の第２の電極（上側電極〉（４）と連
結している。この時、外部接続体（４７）の加圧が強す
ぎてパッド（４９）がその下の第１の導電膜（５３）に
半導体（３）を突き抜けてショートシても、隣の素子の
第１の電極（２）とショートしないように開溝（１３′
）を設け、電気的に電極部（５）の第１のバンド（４９
）とその隣に位置している素子の第１の電極（２）とを
離間させている。また外側部は基板（１）の端部であり
、導体、半導体とも側面（２０’）によりりＪ断分子ｉ
ｌｌされている。In the drawing, the external lead electrode part (5) is connected to the external connection body (
has a band (49) in contact with the band (47);
49) is connected to the second electrode (upper electrode) (4) of the adjacent element. At this time, the pressure of the external connection body (47) is too strong and the pad (49) is connected to the first electrode below it. An open groove (13'
), and electrically connects the first band (49) of the electrode part (5).
) and the first electrode (2) of the element located next to it are spaced apart. The outer part is the edge of the substrate (1), and both conductors and semiconductors have J fragments i due to the side surface (20').
It has been done.
さらに第３図（Ｂ）は第２の外部引出し電極部の構造を
示している。この第２の電極部は隣の光電変換素子の下
側の第１の電極（２）を形成し、さらにごの上面に半導
体（３）を形成している。Furthermore, FIG. 3(B) shows the structure of the second external extraction electrode section. This second electrode portion forms the first electrode (2) on the lower side of the adjacent photoelectric conversion element, and furthermore, a semiconductor (3) is formed on the upper surface of the photoelectric conversion element.
さらにこの後、第２の開溝の形成と同一工程にて開溝（
１８′りを形成している。この開溝（１Ｂ′つの形成に
より、第１の電極（２）の側面（５５）を露呈させた。Furthermore, after this, the opening groove (
18'. By forming these open grooves (1B'), the side surface (55) of the first electrode (2) was exposed.
さらに第２の導電膜（４）を形成し、同時にバンド（４
８）、サイドコンタクｌ−（５５）を構成させた。かく
して素子の第１の電極の側面（５５）にパッド（４８）
が第２の導電性祠料により （１８１りにて連結して設
けられている。さらにバ・ノド（４８）は外部接続体（
４６）と電気的に連結接触している。Furthermore, a second conductive film (4) is formed, and at the same time a band (4) is formed.
8), a side contact l-(55) was constructed. Thus, a pad (48) is placed on the side surface (55) of the first electrode of the element.
are connected to each other by the second conductive abrasive material (181).Furthermore, the base (48) is connected to the external connection body (181).
46).
ここでも開溝（２０′す、端部（２０′つによりパッド
（４８）はまったく他の光電変換素子と電気的に分離さ
れており、１つのパネルで合わせ用マスクをまった（用
いることなしに光電変換装置を作ることができるという
特徴を有する。Here, too, the pad (48) is electrically isolated from other photoelectric conversion elements by the open groove (20') and the end (20'), and the mating mask is not used in one panel. It has the characteristic that photoelectric conversion devices can be made in this way.
第４図は第１図における（Ｄ−Ｄ’）および（Ｅ）の拡
大図である。FIG. 4 is an enlarged view of (D-D') and (E) in FIG. 1.
第４図（Ａ）において、２つの素子（３１）、（１１）
および連結部（１２）ををしている。側端部（６１）に
おいても、第４図（Ｂ）に示すごと＜ 、ＣＴＦ（５９
）、第２の導電膜（５８）等の導体（６９）が残存して
しまう。このため、これらの導体が残存しても、素子（
３１）、＜１１）の特性が劣化しないようにするため、
さらにこの導体（６９）が残存しても、ここの部分で外
枠（６０）に固定することが可能な構造を有せしめてい
る。即ち、基板の側端部にそって、第１の導電膜（２）
は第４の開溝（５６）を形成している。さらにこの第４
の開溝を覆って、半導体（３）、第２の導電膜（４）を
形成する。その後、第４の開溝（５６）の端側にわたっ
て第５の開溝（５７）を設け、この開溝により導体（２
）、＜ ４． ）、半導体（３）をＬＳにより切断して
いる。即ち、この第５の開溝により導体（６１）、半導
体、第２の導体（４）のすべてを切断し同一形状として
いる。In FIG. 4(A), two elements (31) and (11)
and a connecting part (12). Also at the side end (61), as shown in FIG. 4(B), the CTF (59
), the conductor (69) such as the second conductive film (58) remains. Therefore, even if these conductors remain, the element (
In order to prevent the characteristics of 31) and <11) from deteriorating,
Furthermore, even if this conductor (69) remains, it has a structure that allows it to be fixed to the outer frame (60) at this portion. That is, the first conductive film (2) is formed along the side edge of the substrate.
forms a fourth open groove (56). Furthermore, this fourth
A semiconductor (3) and a second conductive film (4) are formed to cover the trench. Thereafter, a fifth open groove (57) is provided across the end side of the fourth open groove (56), and this open groove allows the conductor (2
), <4. ), the semiconductor (3) is cut by LS. That is, the conductor (61), the semiconductor, and the second conductor (4) are all cut into the same shape by this fifth groove.
すると、この分離溝（６２）により第２の導電膜（４）
と第１の導電膜（６１）かシー３−トシても、第４の開
ａ（５６）により電極（２）、＜ ４ ＞間のショート
を防くことができる。また炭素繊維枠（６０）により、
導体（６９）が加圧され、ショートシても素子（３１）
、＜１１）は何等の特性劣化がない。即ち、側端部は２
つの開溝（５６）、＜５７）による分１ｉｌＩｔ溝（６
２）により初めて安定に外枠等との固定により素子が劣
化することがなく、樹脂（６３）で枠と光電変換装置と
固めても、十分信頼性の高い装置とすることが可能とな
った。勿論導体（６９）が部分的に存在しなくてもよい
ことばいうまでもない。Then, the second conductive film (4) is separated by this separation groove (62).
Even if the first conductive film (61) or the sheet 3 is connected, the fourth opening a (56) can prevent short circuit between the electrode (2) and <4>. Also, due to the carbon fiber frame (60),
Even if the conductor (69) is pressurized and shorted, the element (31)
, <11), there is no characteristic deterioration of any kind. That is, the side edges are 2
1ilIt groove (6) with two open grooves (56), <57)
2) has made it possible for the first time to stably fix the device to the outer frame, etc. without causing any deterioration of the element, and to make it possible to create a highly reliable device even if the frame and photoelectric conversion device are hardened with resin (63). . Of course, it goes without saying that the conductor (69) does not need to exist partially.
またさらにこのパネル例えば４０ｃｍ Ｘ ２０ｃｍま
たは６０ｃｍ Ｘ ２０ｃｍを６ケまたは４ヶ直列にア
ルミサツシ枠内に組み合わせることによりパッケージさ
せ、１２０ｃｍ Ｘ ４０ｃｍのＮＥＤＯ規格の大電力
用のパネルを設けることが可能である。Furthermore, it is possible to package 6 or 4 of these panels, for example, 40 cm x 20 cm or 60 cm x 20 cm in series in an aluminum sash frame, to provide a 120 cm x 40 cm NEDO standard high power panel.
またこのＮＥＤＯ規格のパネルはシーフレンクスにより
他のガラス板を本発明の光電変換装置の反射面側（図面
では上側）にはりあわせて合わせガラスとし、その間に
光電変換装置を配置し、風圧、両等に対し機械強度の増
加を図ることも有効である。In addition, this NEDO standard panel is made by laminating another glass plate using Seaflex on the reflective surface side (upper side in the drawing) of the photoelectric conversion device of the present invention, and the photoelectric conversion device is placed between them. It is also effective to increase mechanical strength.
第１図〜第４図において光入射は下側のガラス板よりと
した。しかし本発明はその光の入射側を下側に限定する
ものではない。In FIGS. 1 to 4, light was incident from the lower glass plate. However, the present invention does not limit the light incident side to the lower side.
即ち、基板を可曲性の絶縁表面を有する基板例えばアル
ミニュームを陽極化成させたものを用い、上面の第２の
電極をＣＴＦのＩＴＯとすることにより上面よりの入射
による光電変換を行うことを可能とする。That is, by using a substrate having a flexible insulating surface, such as anodized aluminum, and using CTF ITO as the second electrode on the top surface, photoelectric conversion can be performed by incidence from the top surface. possible.
第１図は本発明の光電変換装置のパネルである。
第２図は本発明の光電変換装置の製造工程を示す縦断面
図である。
第３図、第４図は本発明の第１図の光電変換装置を拡大
して示した１従断面図である。
特許出願人
（Ａ） Ｃ［ｌ）
ぷ３（２″１
３１）２／ｒ
１
ｃｔｙ）
４４ｒのFIG. 1 shows a panel of a photoelectric conversion device of the present invention. FIG. 2 is a longitudinal sectional view showing the manufacturing process of the photoelectric conversion device of the present invention. 3 and 4 are enlarged sectional views showing the photoelectric conversion device of FIG. 1 according to the present invention. Patent applicant (A) C[l) p3(2″1 31)2/r 1 cty) 44r
Claims (1)
工程と、該導電膜を第１の開溝を形成して外部引出し電
極部領域と光電変換素子領域とに離間せしめる工程と、
前記電極部領域、前記素子領域、前記開溝上に非単結晶
半導体を形成する工程と、該半導体上に第２の導電膜を
形成する工程とを有し、前記電極部領域の第２の導電膜
のパッドと該領域に隣接して前記光電変換素子の第２の
導電膜 とを同一材料により同一工程で形成することを特徴とす
る光電変換半導体装置の作製方法。 ２、絶縁表面を有する基板上に第１の導電膜を形成する
工程と、該導電１１桑上の外部引出し電極部領域と光電
変換素子領域上に非単結晶半導体を形成する工程と、前
記電極部領域と前記素子領域との間の前記非単結晶半導
体と該半導体下の前記第１の導電膜に開溝を形成して除
去することにより前記第１の導電膜の側面を露呈せしめ
る工程と、前記素子領域、前記電極部領域および第１の
導電膜の側面を含む前記開溝上に第２の導電膜を形成す
る工程と１、 少なくとも該第２の導電膜に開溝を形成
して前記電極部領域と該領域に隣接した前記素子の第２
の電極部とを離間する工程とを有し、前記電極部の第２
の導電膜は前記素子の前記第１の電極の側面に電気的に
連結して設けられたことを特徴とする光電変換半導体装
置の作製方法。 ３、特許請求の範囲第１項において、開溝の形成はレー
ザ光を照射して形成することを特徴とする光電変換半導
体装置の作製方法。[Claims] 1. A step of forming a first conductive film on a substrate having an insulating surface, and forming a first groove in the conductive film to form an external lead electrode region and a photoelectric conversion element region. a step of separating the
forming a non-single crystal semiconductor on the electrode region, the element region, and the groove; and forming a second conductive film on the semiconductor; A method for manufacturing a photoelectric conversion semiconductor device, characterized in that a conductive film pad and a second conductive film of the photoelectric conversion element adjacent to the region are formed using the same material and in the same process. 2. A step of forming a first conductive film on a substrate having an insulating surface, a step of forming a non-single crystal semiconductor on the external lead electrode region and the photoelectric conversion element region on the conductive 11 mulberry, and forming and removing grooves in the non-single crystal semiconductor between the partial region and the element region and the first conductive film under the semiconductor to expose side surfaces of the first conductive film; , forming a second conductive film on the trench including the element region, the electrode region, and the side surface of the first conductive film; 1. forming a trench in at least the second conductive film; the electrode region and the second region of the element adjacent to the region;
a second electrode part of the electrode part;
A method for manufacturing a photoelectric conversion semiconductor device, characterized in that the conductive film is provided in electrical connection with a side surface of the first electrode of the element. 3. A method for manufacturing a photoelectric conversion semiconductor device according to claim 1, wherein the grooves are formed by irradiating laser light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58168554A JPH077840B2 (en) | 1983-09-12 | 1983-09-12 | Method for manufacturing photoelectric conversion semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58168554A JPH077840B2 (en) | 1983-09-12 | 1983-09-12 | Method for manufacturing photoelectric conversion semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6059784A true JPS6059784A (en) | 1985-04-06 |
| JPH077840B2 JPH077840B2 (en) | 1995-01-30 |
Family
ID=15870174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58168554A Expired - Lifetime JPH077840B2 (en) | 1983-09-12 | 1983-09-12 | Method for manufacturing photoelectric conversion semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH077840B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62274677A (en) * | 1986-05-22 | 1987-11-28 | Fuji Electric Co Ltd | Photosensor |
| JP2006253417A (en) * | 2005-03-10 | 2006-09-21 | Mitsubishi Heavy Ind Ltd | Solar cell panel and manufacturing method |
| WO2008029476A1 (en) * | 2006-09-08 | 2008-03-13 | Mitsubishi Heavy Industries, Ltd. | Solar battery panel and method for manufacturing solar battery panel |
| JP2011086960A (en) * | 2011-01-24 | 2011-04-28 | Mitsubishi Heavy Ind Ltd | Solar cell panel |
| JP2013016870A (en) * | 2012-10-23 | 2013-01-24 | Sharp Corp | Thin film solar cell |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4091310B2 (en) * | 2001-02-15 | 2008-05-28 | 株式会社カネカ | Method for producing silicon thin film solar cell |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5753986A (en) * | 1980-07-25 | 1982-03-31 | Eastman Kodak Co | |
| JPS57163753U (en) * | 1981-04-09 | 1982-10-15 |
-
1983
- 1983-09-12 JP JP58168554A patent/JPH077840B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5753986A (en) * | 1980-07-25 | 1982-03-31 | Eastman Kodak Co | |
| JPS57163753U (en) * | 1981-04-09 | 1982-10-15 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62274677A (en) * | 1986-05-22 | 1987-11-28 | Fuji Electric Co Ltd | Photosensor |
| JP2006253417A (en) * | 2005-03-10 | 2006-09-21 | Mitsubishi Heavy Ind Ltd | Solar cell panel and manufacturing method |
| WO2008029476A1 (en) * | 2006-09-08 | 2008-03-13 | Mitsubishi Heavy Industries, Ltd. | Solar battery panel and method for manufacturing solar battery panel |
| KR101046813B1 (en) * | 2006-09-08 | 2011-07-06 | 미츠비시 쥬고교 가부시키가이샤 | Solar panel and manufacturing method of solar panel |
| JP2011086960A (en) * | 2011-01-24 | 2011-04-28 | Mitsubishi Heavy Ind Ltd | Solar cell panel |
| JP2013016870A (en) * | 2012-10-23 | 2013-01-24 | Sharp Corp | Thin film solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH077840B2 (en) | 1995-01-30 |
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