JPS6058692A - Manufacture of semiconductor laser element - Google Patents
Manufacture of semiconductor laser elementInfo
- Publication number
- JPS6058692A JPS6058692A JP16778283A JP16778283A JPS6058692A JP S6058692 A JPS6058692 A JP S6058692A JP 16778283 A JP16778283 A JP 16778283A JP 16778283 A JP16778283 A JP 16778283A JP S6058692 A JPS6058692 A JP S6058692A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- etched
- cleavage
- buffer layer
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0281—Coatings made of semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】 本発明は半導体レーザの製造方法に関するものである。[Detailed description of the invention] The present invention relates to a method for manufacturing a semiconductor laser.
半導体レーザの光出力を制限する最大の要因は、光出力
密度が高くなる事によって、反射面近傍が溶融・破壊す
る光学損傷である。活性層に平行な方向の横モードが基
本モードに制御されたＡｌＧａＡｓレーザでは、２０〜
３０ｍＷが光学損傷の典型的な臨界光出力である。この
光学損傷は、反射面近傍をレーザ光に対して透明な結晶
材料で構成する事によって、抑制される以後、この種の
構造を有するレーザをウィンドウ型レーザと呼ぶことに
する。The biggest factor limiting the optical output of a semiconductor laser is optical damage caused by melting and destruction of the vicinity of the reflecting surface due to the increased optical output density. In an AlGaAs laser in which the transverse mode in the direction parallel to the active layer is controlled to be the fundamental mode, 20~
30 mW is a typical critical light power for optical damage. This optical damage can be suppressed by configuring the vicinity of the reflecting surface with a crystal material that is transparent to the laser beam, and hence a laser having this type of structure will be referred to as a window type laser.
しかるに、これを実現する具体的な手段はこれ迄極めて
少く、また、特性及び生産性の両面に於いて、極めて不
十分なものであった。例えば、不純物濃度及び導電型差
によって形成したウィンドウ型レーザでは、透明領域に
於いて活性層に平行な方向の横モード制御機構がないた
めに、非点収差が発生する。また、他のウィンドウ型レ
ーザでは、構造が複雑でつくシにくいという大きな難点
があった。However, until now there have been very few concrete means for achieving this, and they have been extremely inadequate in terms of both characteristics and productivity. For example, in a window type laser formed by a difference in impurity concentration and conductivity type, astigmatism occurs because there is no transverse mode control mechanism in the direction parallel to the active layer in the transparent region. In addition, other window-type lasers have a complicated structure and are difficult to attach.
本発明の目的はこのような難点を一挙に取シ除いた半導
体レーザ素子の製造方法を提供する事にある。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a semiconductor laser device that eliminates all of the above-mentioned difficulties.
本発明によれば選択的にエツチングされるバッファ一層
を基板とダブルへテロ接合層間に含み、このダブルへテ
ロ接合層をストライプ方向と直角方向に溝状に少くとも
バッファ一層に到達する迄エツチングし、その後、バッ
ファ一層を選択的に側面エツチングした後に、ダブルへ
テロ接合層がエツチング側壁近傍で５ツ開され、との労
開面にレーザ光の光子エネルギーよシバンドギャップの
大きな高抵抗半導体結晶薄膜がエピタキシャル成長され
、且つ、ダブルへテロ接合層及びバッファ一層がエツチ
ング除去された溝部の基板結晶を分離切断してつくられ
た結晶片構造を有する事を特徴とする高出力半導体レー
ザ素子の製造方法が得られる。According to the present invention, a selectively etched buffer layer is included between the substrate and the double heterojunction layer, and the double heterojunction layer is etched in a groove shape in a direction perpendicular to the stripe direction until at least the buffer layer is reached. Then, after selectively side-etching one buffer layer, a double heterojunction layer is opened in the vicinity of the etched sidewall, and a high-resistance semiconductor crystal with a large band gap corresponding to the photon energy of the laser beam is formed on the opening plane of the double heterojunction layer. A method for manufacturing a high-output semiconductor laser device, characterized in that it has a crystal piece structure created by separating and cutting a substrate crystal in a groove portion in which a thin film is epitaxially grown and a double heterojunction layer and a buffer layer have been etched away. is obtained.
本発明の原理は、反射面全形成するための伸開は結晶の
厚さが薄い程容易にできる事、及び半絶縁性の高抵抗の
高バンドギャップ薄膜を気相成長技術によって容易に被
着できる事、更には活性層及びこれに隣接しない領域を
スクライプ法によって切断する事によシ、活性層近傍に
結晶欠陥を導入しないようにする事ができるという事実
に基づいている。これらをたくみに組み合わせる事によ
って、本発明の意図した非点収差がなく、且つ生産性の
よいウィンドウ型の高出力半導体レーザを実現する事が
できる。The principle of the present invention is that the thinner the crystal, the easier it is to expand to form the entire reflective surface, and that a semi-insulating, high-resistance, high-bandgap thin film can be easily deposited using vapor phase growth technology. This is based on the fact that crystal defects can be prevented from being introduced in the vicinity of the active layer by cutting the active layer and regions not adjacent thereto by a scribing method. By skillfully combining these elements, it is possible to realize a window-type high-power semiconductor laser which is free from astigmatism and has good productivity as intended by the present invention.
次に本発明の実施例について第１図（ａ）〜（ｇ） を
参照しながら説明する。まず、第１図（ａ） Ｋ示すよ
うにｎ −Ｇ ａ Ａ Ｓ基１上に、厚さ５／ｊｍのｎ
−Ａｌ０．６ Ｇ ａ ０．４ Ａ ｓバッファ一層２
が通常の液相成長法で設けられ、その上に活性層に平行
な方向の横モードを制御する各種のストライプ構造を含
んだダブルへテロ接合層が設けられる。本発明は全ての
スト２イブ構造に適用できるため、図中では単に、ｎ
−Ａ Ｉ ０．４ Ｇ ａ ０．６ Ａ ｓクラット層
３（厚さ２μｍ）、Ｐ−ＡＩ ０．ｌＧａ０．９Ａｓ活
性層４（厚さｏ、１μｍ）、Ｐ−Ａ Ｉ ０．４ Ｇ
ａ Ｏ，６Ａ ｓクラッド層５（厚さ１．５／Ｊｍ）、
ＰＩ −Ｇ ａ Ａ ｓキャップ層６（厚さ１μｍ）が
設けられているとしておく。次いで第１図（ｂ）に示す
ように、ストライプ方向と直角（＜１１０）方向）に巾
５０μｍの溝７を化学エツチング法（硫酸：過酸化水素
水：水等）又はイオンエツチング法等で少くともバッフ
ァ一層２に到達するように形成する。次に第１図（Ｃ）
に示すように、Ａｌ混晶比の高い層のみをエツチングす
る弗酸等で、ｎ −Ａ Ｉ ０．６ Ｇ ａ Ｏ，４Ａ
ｓバツフア一層３のみを巾５０μｍ程度エツチング（ア
ンダーカット、サイドエッチ）する。アンダーカットさ
れた端部８の近傍９に結晶表面よシカをかければ、バッ
ファ一層以上の層は薄いために容易に伸開され、半導体
レーザの反射面となる弁開面１０が形成される（第１図
（ｄ））。次いで、第１図（ｅ）に示すようにＭＯＣＶ
Ｄ法によシ、厚さ０．５μｍの７ｙドープＡＩ０．４Ｇ
ａ０．６Ａｓ薄膜１１をエピタキシャル成長させる。こ
の際、装置中の酸素や水分がとル込まれて薄膜］ｌは半
？３縁性の高抵抗層となり、ダブルへテロ接合の電気的
シ目−トを回避することができる。次に第１図（ｆ）に
示すように電極１２及び１３１ｃストライプ構造に応じ
て必要な部分に設けた後、巾約１５０μｍと広くなった
溝１４を通してスクライプ法またはダイシング法によっ
てｎ−ＧａＡｇ基板１を切断する。Next, embodiments of the present invention will be described with reference to FIGS. 1(a) to 1(g). First, as shown in FIG. 1(a), a layer of n with a thickness of 5/jm is placed on the
-Al0.6 Ga 0.4 A s buffer 1 layer 2
is formed by a conventional liquid phase growth method, and a double heterojunction layer containing various stripe structures for controlling the transverse mode in the direction parallel to the active layer is formed thereon. Since the present invention is applicable to all stave structures, in the figure, n
-A I 0.4 Ga 0.6 A s Crut layer 3 (thickness 2 μm), P-AI 0. lGa0.9As active layer 4 (thickness o, 1 μm), P-A I 0.4 G
a O,6A s cladding layer 5 (thickness 1.5/Jm),
It is assumed that a PI-GaAs cap layer 6 (1 μm thick) is provided. Next, as shown in FIG. 1(b), grooves 7 with a width of 50 μm are formed in a direction perpendicular to the stripe direction (<110 direction) using a chemical etching method (sulfuric acid: hydrogen peroxide: water, etc.) or an ion etching method. Both are formed so as to reach buffer layer 2. Next, Figure 1 (C)
As shown in Figure 2, n-A I 0.6 Ga O, 4A is etched using hydrofluoric acid, etc., which etches only the layer with a high Al mixed crystal ratio.
Only the S buffer layer 3 is etched (undercut, side etched) to a width of about 50 μm. If a crystal surface is applied to the vicinity 9 of the undercut end 8, the buffer layer or more will be easily expanded because it is thin, and a valve opening surface 10 will be formed, which will serve as a reflection surface for the semiconductor laser. Figure 1(d)). Next, as shown in FIG. 1(e), MOCV
7y-doped AI0.4G with a thickness of 0.5 μm by D method
An a0.6As thin film 11 is grown epitaxially. At this time, the oxygen and moisture in the device are dissolved into a thin film] l is half? A three-edge high-resistance layer is formed, and the electrical seams of a double heterojunction can be avoided. Next, as shown in FIG. 1(f), after providing the electrodes 12 and 131c in necessary parts according to the striped structure, the n-GaAg substrate cut.
できたバーのストライプ間を分離切断すれば、第１図（
ｇ）のレーザチップができ上がる。If the stripes of the resulting bar are separated and cut, the result shown in Figure 1 (
g) The laser chip is completed.
このようにすれば、レーザ光の出射部分１５は、結晶学
的につながシ且つ、レーザ光にとって透明な高バンドギ
ャップ薄膜１１によって−Ｊ？＼われるから、光学枦傷
を木質的に回避でき、通常の半導体レーザに比べて５〜
ｌＯ倍の高光出力密度動作が可能になる。また、高バン
ドギャップ層が薄いから、非点収差も生ぜず１反射伊失
も少ない。更に、結晶の切断分離が基板に対してのみ行
われるから、発振領域への結晶欠陥の導入が抑えられ。In this way, the laser beam emitting portion 15 can be -J? ＼Since optical damage can be avoided, it is possible to avoid optical damage, and it is 5 ~
It becomes possible to operate at a high optical output density 10 times higher. Furthermore, since the high bandgap layer is thin, astigmatism does not occur and there are fewer missed reflections. Furthermore, since the crystal is cut and separated only on the substrate, introduction of crystal defects into the oscillation region is suppressed.
信頼性が高まる。勿論、本発明は、従来の反射面保護膜
の被着と同様の手法が用いられるから、生産性は極めて
高い。また、ストライプに平行な方向についても上記と
同様の手法を用いればダブルへテロ接合のｒｎ接合は完
全に高バンドギャノプの高抵抗層で覆われるから、外気
の影響を極めて受けにくくなり、耐環境性的な保藤効果
も高まる。Increased reliability. Of course, since the present invention uses a method similar to that used for depositing a conventional reflective surface protective film, productivity is extremely high. In addition, if the same method as above is used in the direction parallel to the stripes, the rn junction of the double heterojunction will be completely covered with a high-band ganop high-resistance layer, making it extremely difficult to be affected by the outside air and improving environmental resistance. The Hoto effect will also increase.
尚、本発明の効果は上記の実施例には限らない。Note that the effects of the present invention are not limited to the above embodiments.
全てのストライプ構造に本発明は適用できる。また、バ
ッファ一層やダブルへテロ接合のＡｌ混晶比、あるいは
製法手順は上記に限らない。１μｍμｍ長波長０．７ｐ
ｍ帯波長のＩ ｎ Ｇ ａ Ａ ｓ Ｐ ／ １ｎＰレ
ーザについても、ＩｎＧａＡｓＰとＩｎＰに対する選択
エツチングを利用してバッファ一層のアンダーカラトラ
する事ができるため、上記実施例と同様の製造方法並び
にチップ構造をうる事ができる。尚、高抵抗の高バンド
ギャップ薄層はＭＢＥ（分子 エピタキシー）法等によ
ってもつくる事ができる。The present invention is applicable to all striped structures. Further, the Al mixed crystal ratio of the buffer single layer or double heterojunction, or the manufacturing procedure is not limited to the above. 1μmμm long wavelength 0.7p
For InGaAsP/1nP lasers with m-band wavelengths, it is possible to undercut the buffer layer by using selective etching for InGaAsP and InP, so the same manufacturing method and chip structure as in the above embodiments can be used. can be obtained. Incidentally, a high-resistance, high-bandgap thin layer can also be produced by the MBE (molecular epitaxy) method.
第１図（ａ）〜（Ｗは本発明の基本的実施例を製法層に
説明するだめの要所面図を示す。
１・・−−−−ｎ−ＧａＡｓ基板、 ２ ・−−−−−
ｎ −Ａ Ｉ ０．６ＧａＯ，４Ａ ｓバッファ一層、
３−−−−ｎ −Ａ Ｉ ０．４ Ｇ ａｏ、 ６ Ａ
ｓクラッド層、 ４− Ｐ−Ａ Ｉ ０． Ｉ Ｇ
ａＯ，９Ａｓ活性層、５−・＝ Ｐ Ａ １０．４ Ｇ
ａ Ｏ，６Ａ ｓクラッド層、６…・・・ｐ−ＧａＡ
ｓキャップ層、７°０・・・溝、８・・・・・・アンダ
ーカット端部、９−・・・・・劣開用加圧部分、１０・
・・・・・弁開面、１１・・・・・・高抵抗ＡＩＯ，４
Ｇ ａ ０．６ Ａ ｓ薄膜、１２−−−−−・Ｐ−電
極、１３・・・・・・ｎ−電極、１４・・・・・・溝、
１５・・・・・・レーザ光出射部分。
第１図FIGS. 1(a) to 1(W) show important cross-sectional views for explaining basic embodiments of the present invention in terms of manufacturing method layers. 1.---n-GaAs substrate, 2.---- −
n-AI 0.6GaO, 4A s buffer layer,
3---n-AI 0.4 Gao, 6 A
s cladding layer, 4-P-A I 0. IG
aO, 9As active layer, 5-.=P A 10.4 G
a O,6A s cladding layer, 6...p-GaA
s cap layer, 7°0...groove, 8... undercut end, 9-... pressure part for inferior opening, 10.
... Valve opening surface, 11 ... High resistance AIO, 4
Ga 0.6 A s thin film, 12------P-electrode, 13...n-electrode, 14...groove,
15... Laser light emitting part. Figure 1
Claims (1)
へテロ接合層間に含み、該ダブルへテロ接合層をストラ
イプ方向と直角方向に溝状に少くとも該バッファ一層に
到達する迄エツチングする工程と、該バッファ一層を選
択的に側面エツチングした後に、該ダブルへテロ接合層
を該エツチング側壁近傍で弁開する工程と、該弁開面に
レーザ光の光子エネルギーよシハンドギャップの大きな
高抵抗半導体結晶薄膜を形成する工程と、前記溝部の基
板結晶を分離切断する工程とを有することを特徴とする
半導体レーザ素子の製造方法。a selectively etched buffer layer between the substrate and the double heterojunction layer, etching the double heterojunction layer in the form of a groove in a direction perpendicular to the stripe direction until at least the buffer layer is reached; After selectively side-etching one buffer layer, opening the double heterojunction layer near the etched sidewall, and applying a high-resistance semiconductor crystal thin film with a large side gap to the photon energy of the laser beam on the opening surface. 1. A method for manufacturing a semiconductor laser device, comprising the steps of: forming a substrate crystal; and separating and cutting a substrate crystal in the groove portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16778283A JPS6058692A (en) | 1983-09-12 | 1983-09-12 | Manufacture of semiconductor laser element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16778283A JPS6058692A (en) | 1983-09-12 | 1983-09-12 | Manufacture of semiconductor laser element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6058692A true JPS6058692A (en) | 1985-04-04 |
Family
ID=15856007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16778283A Pending JPS6058692A (en) | 1983-09-12 | 1983-09-12 | Manufacture of semiconductor laser element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6058692A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62291194A (en) * | 1986-06-11 | 1987-12-17 | Nec Corp | Manufacture of semiconductor laser element |
| JPH01227485A (en) * | 1988-03-07 | 1989-09-11 | Mitsubishi Electric Corp | Semiconductor laser device |
| JPH0330390A (en) * | 1989-06-27 | 1991-02-08 | Nec Corp | Formation of semiconductor laser resonator end face protective layer |
| JPH03106090A (en) * | 1989-09-20 | 1991-05-02 | Nec Corp | Semiconductor laser element |
| EP0469900A2 (en) * | 1990-08-01 | 1992-02-05 | Sharp Kabushiki Kaisha | A method for the production of a semiconductor laser device |
| WO2016131912A1 (en) * | 2015-02-18 | 2016-08-25 | Osram Opto Semiconductors Gmbh | Method for producing an electronic component |
-
1983
- 1983-09-12 JP JP16778283A patent/JPS6058692A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62291194A (en) * | 1986-06-11 | 1987-12-17 | Nec Corp | Manufacture of semiconductor laser element |
| JPH01227485A (en) * | 1988-03-07 | 1989-09-11 | Mitsubishi Electric Corp | Semiconductor laser device |
| JPH0330390A (en) * | 1989-06-27 | 1991-02-08 | Nec Corp | Formation of semiconductor laser resonator end face protective layer |
| JPH03106090A (en) * | 1989-09-20 | 1991-05-02 | Nec Corp | Semiconductor laser element |
| EP0469900A2 (en) * | 1990-08-01 | 1992-02-05 | Sharp Kabushiki Kaisha | A method for the production of a semiconductor laser device |
| WO2016131912A1 (en) * | 2015-02-18 | 2016-08-25 | Osram Opto Semiconductors Gmbh | Method for producing an electronic component |
| CN107251345A (en) * | 2015-02-18 | 2017-10-13 | 奥斯兰姆奥普托半导体有限责任公司 | Method for manufacturing electronic building brick |
| US10290997B2 (en) | 2015-02-18 | 2019-05-14 | Osram Opto Semiconductors Gmbh | Method of producing an electronic component |
| CN107251345B (en) * | 2015-02-18 | 2020-07-14 | 奥斯兰姆奥普托半导体有限责任公司 | Method for producing an electronic component |
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