JPS6057937A - Ultraviolet washing method - Google Patents
Ultraviolet washing methodInfo
- Publication number
- JPS6057937A JPS6057937A JP16514883A JP16514883A JPS6057937A JP S6057937 A JPS6057937 A JP S6057937A JP 16514883 A JP16514883 A JP 16514883A JP 16514883 A JP16514883 A JP 16514883A JP S6057937 A JPS6057937 A JP S6057937A
- Authority
- JP
- Japan
- Prior art keywords
- washed
- irradiation chamber
- cleaning
- cleaned
- ultraviolet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 9
- 238000005406 washing Methods 0.000 title abstract 2
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 13
- 239000001301 oxygen Substances 0.000 claims abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000356 contaminant Substances 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims description 21
- 238000007738 vacuum evaporation Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052710 silicon Inorganic materials 0.000 abstract description 12
- 239000010703 silicon Substances 0.000 abstract description 12
- 230000001678 irradiating effect Effects 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract description 5
- 238000009792 diffusion process Methods 0.000 abstract description 4
- 239000007789 gas Substances 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 3
- 238000011109 contamination Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002957 persistent organic pollutant Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011538 cleaning material Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】 本発明は紫外線による洗浄方法に関するものである。[Detailed description of the invention] The present invention relates to a cleaning method using ultraviolet rays.
紫外線ランプにより発生するオゾンを利用して汚染物を
分解洗浄することが従来より行われている。例えばシリ
コンウェハー上にＭＢＥによりシリコン結晶を成長させ
る際の前処理として、主洗浄後にシリコンウェハー上に
付着した大気中の有機汚染物を分解して、結晶を欠陥な
く成長させたシ、真空蒸着させる際の前処理として洗浄
し、蒸着膜の密着性を向上させることが行なわれている
。Conventionally, ozone generated by an ultraviolet lamp has been used to decompose and clean contaminants. For example, as a pretreatment when growing silicon crystals on silicon wafers by MBE, organic contaminants in the atmosphere that have adhered to the silicon wafers are decomposed after main cleaning, crystals are grown without defects, and then vacuum evaporation is performed. Cleaning is performed as a pretreatment to improve the adhesion of the deposited film.
ところで紫外線ランプ、例えば低圧水銀ランプを点灯す
ると、主として波長が２５４ｎｍの水銀共鳴線の紫外線
が外部に放出され、従として１８５ｎｍの紫外線が、梃
には他の波長のものがわずかに放出される。そして、波
長１８５ｎｍの紫外線によってオゾンが生成し、次に、
このオゾンが波長２５４ｎｍの紫外線によシ分解されて
発生基の酸素が生成し、この発生基の酸素が有機汚染物
を分解してガス状態で飛散することが知られている。By the way, when an ultraviolet lamp, such as a low-pressure mercury lamp, is turned on, ultraviolet rays of the mercury resonance line with a wavelength of 254 nm are mainly emitted to the outside, ultraviolet rays of 185 nm are mainly emitted, and ultraviolet rays of other wavelengths are emitted slightly. Then, ozone is generated by ultraviolet rays with a wavelength of 185 nm, and then,
It is known that this ozone is decomposed by ultraviolet rays with a wavelength of 254 nm to generate oxygen as a generating group, and this oxygen as a generating group decomposes organic pollutants and is scattered in a gaseous state.
紫外線による有機汚染物の分解機構は以上の通シである
が、この洗浄された被洗浄体には残存効果がなく、これ
を大気中に放置すると、浮遊する汚染物により再び汚染
されてしまう問題がある。The mechanism of decomposition of organic pollutants by ultraviolet rays is as described above, but the problem is that the cleaned object has no residual effect, and if it is left in the atmosphere, it will be contaminated again by floating pollutants. There is.
従って洗浄後にストックし、その後ＭＢＥや真空蒸着な
どの次工程を実施すれば効果が低下して所期の目的を達
成できない不具合があった。Therefore, if the material is stocked after cleaning and subsequent steps such as MBE or vacuum evaporation are carried out, the effect will decrease and the desired purpose cannot be achieved.
そこで本発明は、被洗浄体が洗浄後に再び汚染されるこ
とがなく、高い洗浄度のもとて水工Ｓを実施することを
目的とし、その構成は、被洗浄体を照射室内に支持し、
酸素あるいは酸素を含む雰囲気で紫外線ランプの光を照
射して表面に付着する有機汚染物などを分解して洗浄し
、洗浄後に照射室内を減圧し、この照射室内あるいはこ
れと接続する真空容器内で被洗浄体に対してＭＢＥや真
空蒸着などの次工程を実施することを特徴とする。Therefore, an object of the present invention is to perform waterworks S with a high level of cleanliness without recontaminating the object to be cleaned after cleaning. ,
Organic contaminants adhering to the surface are decomposed and cleaned by irradiating the light from an ultraviolet lamp in oxygen or an atmosphere containing oxygen, and after cleaning, the pressure inside the irradiation chamber is reduced, and the irradiation chamber is heated in the irradiation chamber or in a vacuum container connected to it. It is characterized by carrying out subsequent steps such as MBE and vacuum evaporation on the object to be cleaned.
以下に図面に基いて本発明の一実施例を具体的に説明す
る。An embodiment of the present invention will be specifically described below based on the drawings.
第１図は本発明の実施例に使用される装置の概略を示す
断面図であるが、真空容器１０側方には洗浄用の酸素を
含むガスを供給する給気孔１１と、内部のガスを排気し
減圧させるための排気孔１２が設けられ、排気孔１２に
は拡散ポンプ２とロータリーポンプ３が接続されている
。真空容器１の内部が照射室４であるが、その中央部に
は被洗浄体５であるシリコンウェハーが支持具６により
支持されている。真空容器１の左右の上方部に灯体７が
一体に連結され、両者は石英ガラスからなる窓板８で区
画されている。そして灯体７内には紫外線ランプ９とし
て大出力低圧水銀灯が２本配設され、その背後には水冷
された反射部材１０が設けられ、紫外線ランプ９の光は
窓板８を透過して下方に照射されるようになっている。FIG. 1 is a cross-sectional view schematically showing an apparatus used in an embodiment of the present invention. On the side of a vacuum container 10, there is an air supply hole 11 for supplying gas containing oxygen for cleaning, and an air supply hole 11 for supplying gas containing oxygen for cleaning. An exhaust hole 12 is provided for evacuating and reducing the pressure, and a diffusion pump 2 and a rotary pump 3 are connected to the exhaust hole 12. The inside of the vacuum container 1 is an irradiation chamber 4, and a silicon wafer, which is an object to be cleaned 5, is supported by a support 6 in the center thereof. A lamp body 7 is integrally connected to the left and right upper parts of the vacuum container 1, and both are partitioned by a window plate 8 made of quartz glass. Two high-output low-pressure mercury lamps are installed as ultraviolet lamps 9 in the lamp body 7, and a water-cooled reflective member 10 is provided behind them, and the light from the ultraviolet lamps 9 passes through the window plate 8 and downwards. It is designed to be irradiated by
しかして、給気孔１１より酸素を含む清浄なガスを供給
し、紫外線ランプ９を点灯すると紫外線は照射室４内の
被洗浄体５に照射され、表面に付着していた有機汚染物
が分解されて完全に洗浄される。そして洗浄が完了する
と被洗浄体５を取シ出すことなく、直ちにロータリーポ
ンプ３、そし６−
て拡散ポンプ２を作動させて照射室４内を減圧する。真
空度が十分上がった後、シリコンウェハーの結晶成長を
させる面に向けて分子線が当たるよう配置された分子線
源１３を動作させ、シリコンウェハー上にシリコンをエ
ビタキクヤル成ａさせる。この時、被洗浄体５は洗浄終
了後に有機汚染物が浮遊した大気にさらされることなく
、直ちに減圧下の照射室４内でＭＢＥできるので、洗浄
後に再度汚染されず、最も清浄な状態で処理されている
ため欠陥の核となる炭素が存在せず、欠陥の無いシリコ
ン結晶を成長させることができる。When a clean gas containing oxygen is supplied from the air supply hole 11 and the ultraviolet lamp 9 is turned on, the object to be cleaned 5 in the irradiation chamber 4 is irradiated with ultraviolet rays, and the organic contaminants attached to the surface are decomposed. and thoroughly cleaned. When the cleaning is completed, the rotary pump 3 and the diffusion pump 2 are immediately activated to reduce the pressure in the irradiation chamber 4 without taking out the object 5 to be cleaned. After the degree of vacuum is sufficiently raised, the molecular beam source 13, which is arranged so that the molecular beam hits the surface of the silicon wafer on which crystal growth is to be made, is operated to cause silicon to form on the silicon wafer. At this time, the object to be cleaned 5 can be subjected to MBE immediately after cleaning in the irradiation chamber 4 under reduced pressure without being exposed to the air containing floating organic contaminants, so it will not be contaminated again after cleaning and will be processed in the cleanest state. Because of this, there is no carbon, which can become the nucleus of defects, and it is possible to grow defect-free silicon crystals.
次に、第２図は他の実施例を示すが、この例では照射室
４とＭＢＥ室１４とが仕切扉１５で仕切られてそれぞれ
が減圧できるよう釦なってｉる。そして照射室４内で洗
浄後に照射室４内を排気減圧し、仕切扉１５を開けて既
に高真空に保持されているＭＢＥ室１４に被洗浄体５を
移し、仕切扉１５を閉じてＭＢＥを行うとともに、照射
室４内に次４−
の未処理の被洗浄体５をセットし、給気孔１１より酸素
ガスを給気して洗浄が行れる。従って、本寮施例では洗
浄とＭＢＥとを効率よく行うことができる。Next, FIG. 2 shows another embodiment, in which the irradiation chamber 4 and the MBE chamber 14 are separated by a partition door 15 and each has a button so that the pressure can be reduced. After cleaning in the irradiation chamber 4, the interior of the irradiation chamber 4 is evacuated and depressurized, the partition door 15 is opened and the object to be cleaned 5 is transferred to the MBE chamber 14 which is already maintained at a high vacuum, and the partition door 15 is closed to perform MBE. At the same time, the next untreated object 5 to be cleaned is set in the irradiation chamber 4, and oxygen gas is supplied from the air supply hole 11 to perform cleaning. Therefore, in this dormitory example, cleaning and MBE can be performed efficiently.
なお、これらの実施例では洗浄後の工程がＭＢＥの場合
について説明したが、これに限られるものでなく、例え
ば真空中でガラス基板などにＡｔを蒸着させる真空蒸着
でも良い。この場合は紫外線洗浄により表面の有機汚染
物の薄層を分解除去することによシ、基板と蒸着物との
剥離を除ぐことかできるが、要は減圧下で処理する工程
であり、被洗浄体５を洗浄後に大気にさらさないもので
あればいずれのものでも良い。In addition, although the case where the process after cleaning was MBE was explained in these Examples, it is not limited to this, and for example, vacuum evaporation in which At is evaporated onto a glass substrate or the like in a vacuum may be used. In this case, peeling between the substrate and the deposit can be removed by decomposing and removing the thin layer of organic contaminants on the surface using ultraviolet cleaning, but the key is to process under reduced pressure. Any type of cleaning material may be used as long as the cleaning body 5 is not exposed to the atmosphere after cleaning.
以上説明した様に本発明は、被洗浄体を照射室内に支持
し、酸素あるいは酸素を含む雰囲気中で紫外線ランプの
光を照射して表面に付着する有機汚染物表どを分解して
洗浄し、洗浄後に照射室内を減圧し、この照射室内又は
これに接続する真空容器で被洗浄体に対してＭＢＥや真
空蒸着などの次工程を実施するようにしたので、被洗浄
ｆ＆に＋ｔｒび汚染されることなく、高い清浄度のもと
て次工程を実施することができる。As explained above, the present invention supports the object to be cleaned in an irradiation chamber and irradiates it with light from an ultraviolet lamp in oxygen or an atmosphere containing oxygen to decompose and clean organic contaminants adhering to the surface. After cleaning, the pressure inside the irradiation chamber was reduced, and the next process such as MBE or vacuum evaporation was carried out on the object to be cleaned in this irradiation chamber or in a vacuum container connected to it. The next process can be carried out with high cleanliness without any problems.
第１図、第２図は本発明の実施例に使用される装置の概
略を示す断面図である。
１・・・真空容器 ２・・・拡散ポンプ３・・・ロータ
リーポンプ ４・・・照射室５・・・被洗浄体（シリコ
ンウェハー）７・・・灯体 ８・・・窓板 ９・・・紫
外線ランプ１０・・・反射部材 １１・・・給気孔 １
２・・・排気孔１３・・・分子線源
出願人 ウシオ電機株式会社
代理人 弁理士 田原寅之助
７−
第１図
第２図FIGS. 1 and 2 are sectional views schematically showing an apparatus used in an embodiment of the present invention. 1...Vacuum container 2...Diffusion pump 3...Rotary pump 4...Irradiation chamber 5...Object to be cleaned (silicon wafer) 7...Lamp body 8...Window plate 9...・Ultraviolet lamp 10... Reflective member 11... Air supply hole 1
2...Exhaust hole 13...Molecular beam source Applicant USHIO INC. Patent attorney Toranosuke Tahara 7- Figure 1 Figure 2
Claims (1)
雰囲気中で紫外線ランプの光を照射して表面に付着する
有機汚染物などを分解して洗浄し、洗浄後に照射室内を
減圧し、この照射室内あるいは、これと接続された真空
容器内で被洗浄体に対してＭＢＥ（分子線エピタキシャ
ル成ｌｋ）や真空蒸着などの次工程を実施することを特
徴とする紫外線洗浄方法。The object to be cleaned is supported in an irradiation chamber and irradiated with light from an ultraviolet lamp in oxygen or an atmosphere containing oxygen to decompose and clean organic contaminants adhering to the surface.After cleaning, the pressure inside the irradiation chamber is reduced and the An ultraviolet cleaning method characterized by performing a subsequent process such as MBE (molecular beam epitaxial formation) or vacuum evaporation on an object to be cleaned in an irradiation chamber or a vacuum container connected to the irradiation chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16514883A JPS6057937A (en) | 1983-09-09 | 1983-09-09 | Ultraviolet washing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16514883A JPS6057937A (en) | 1983-09-09 | 1983-09-09 | Ultraviolet washing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6057937A true JPS6057937A (en) | 1985-04-03 |
Family
ID=15806791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16514883A Pending JPS6057937A (en) | 1983-09-09 | 1983-09-09 | Ultraviolet washing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6057937A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60107821A (en) * | 1983-11-16 | 1985-06-13 | Hitachi Ltd | Molecular-beam crystal growth device |
| JPS61284925A (en) * | 1985-06-10 | 1986-12-15 | Sony Corp | Manufacture of semiconductor device |
| JPS6298730A (en) * | 1985-10-25 | 1987-05-08 | Toshiba Corp | Ultraviolet ray irradiator |
| JPS6314434A (en) * | 1986-07-04 | 1988-01-21 | Dainippon Screen Mfg Co Ltd | Substrate surface processing and equipment therefor |
| JPH0454551U (en) * | 1990-09-10 | 1992-05-11 | ||
| JPH05293617A (en) * | 1992-04-17 | 1993-11-09 | Nippon Steel Corp | Device for automating continuous casting work |
| US6037270A (en) * | 1994-06-30 | 2000-03-14 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device and methods of processing, analyzing and manufacturing its substrate |
| WO2002047142A1 (en) * | 2000-12-05 | 2002-06-13 | Tokyo Electron Limited | Method and apparatus for treating article to be treated |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54125967A (en) * | 1978-03-23 | 1979-09-29 | Matsushita Electric Ind Co Ltd | Crystal growth method |
| JPS56278A (en) * | 1979-06-13 | 1981-01-06 | Matsushita Electronics Corp | Method and apparatus for plasma ethcing of aluminum |
| JPS5852827A (en) * | 1981-09-25 | 1983-03-29 | Hitachi Ltd | Dry etching and device thereof |
-
1983
- 1983-09-09 JP JP16514883A patent/JPS6057937A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54125967A (en) * | 1978-03-23 | 1979-09-29 | Matsushita Electric Ind Co Ltd | Crystal growth method |
| JPS56278A (en) * | 1979-06-13 | 1981-01-06 | Matsushita Electronics Corp | Method and apparatus for plasma ethcing of aluminum |
| JPS5852827A (en) * | 1981-09-25 | 1983-03-29 | Hitachi Ltd | Dry etching and device thereof |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60107821A (en) * | 1983-11-16 | 1985-06-13 | Hitachi Ltd | Molecular-beam crystal growth device |
| JPS61284925A (en) * | 1985-06-10 | 1986-12-15 | Sony Corp | Manufacture of semiconductor device |
| JPS6298730A (en) * | 1985-10-25 | 1987-05-08 | Toshiba Corp | Ultraviolet ray irradiator |
| JPS6314434A (en) * | 1986-07-04 | 1988-01-21 | Dainippon Screen Mfg Co Ltd | Substrate surface processing and equipment therefor |
| JPH0415614B2 (en) * | 1986-07-04 | 1992-03-18 | Dainippon Screen Mfg | |
| JPH0454551U (en) * | 1990-09-10 | 1992-05-11 | ||
| JPH05293617A (en) * | 1992-04-17 | 1993-11-09 | Nippon Steel Corp | Device for automating continuous casting work |
| US6037270A (en) * | 1994-06-30 | 2000-03-14 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device and methods of processing, analyzing and manufacturing its substrate |
| WO2002047142A1 (en) * | 2000-12-05 | 2002-06-13 | Tokyo Electron Limited | Method and apparatus for treating article to be treated |
| US7208428B2 (en) | 2000-12-05 | 2007-04-24 | Tokyo Electron Limited | Method and apparatus for treating article to be treated |
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