JPS605631A - Am multiband receiver - Google Patents

Am multiband receiver

Info

Publication number
JPS605631A
JPS605631A JP11265483A JP11265483A JPS605631A JP S605631 A JPS605631 A JP S605631A JP 11265483 A JP11265483 A JP 11265483A JP 11265483 A JP11265483 A JP 11265483A JP S605631 A JPS605631 A JP S605631A
Authority
JP
Japan
Prior art keywords
circuit
band
transistor
local
coil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11265483A
Other languages
Japanese (ja)
Inventor
Tadashi Takeda
正 竹田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11265483A priority Critical patent/JPS605631A/en
Publication of JPS605631A publication Critical patent/JPS605631A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03JTUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J5/00Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner
    • H03J5/24Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner with a number of separate pretuned tuning circuits or separate tuning elements selectively brought into circuit, e.g. for waveband selection or for television channel selection
    • H03J5/242Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner with a number of separate pretuned tuning circuits or separate tuning elements selectively brought into circuit, e.g. for waveband selection or for television channel selection used exclusively for band selection

Landscapes

  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Circuits Of Receivers In General (AREA)

Abstract

PURPOSE:To reduce influence of parasitic oscillation and improve receiving characteristic by constituting a local oscillating circuit with a base turning type circuit of a transistor for MW band receiving and with a Hartley circuit type circuit of an FET for SW band receiving. CONSTITUTION:In the case of MW band receiving, switches 1a-1e are connected to an (m) terminal. A local oscillating circuit consists of a coil 7 connected to the base of a transistor TR29 and a tuning circuit consisting of a tuning condenser C10, and the local oscillation signal is inputted to a buffer TR22. When receiving SW band, switches 1a-1e are changed to S terminal side. The local oscillating circuit is constituted in Hartley oscillating circuit type circuit consisting of an FET30, a coil 8, a tuning condenser C12 etc. and advantageous to parasitic oscillation, and the local oscillation signal is inputted to TR22. By this way, influence of parasitic oscillation is reduced, restriction to parts arrangement and change of design etc. is relieved and degree of freedom of design is increased.

Description

【発明の詳細な説明】 本発明は、AM多バンド受信機の局部発振回路に関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a local oscillator circuit for an AM multi-band receiver.

(従来例の構成とその問題点) 第1図は、従来のΔM2バンド受信機の混合回路の構成
を示したものである。ここでは、一方のMWバンドを受
信する場合は、切換スイッチla、 lb・・・をm端
子に接続し、他方の5Illバンドを受信する場合は、
S@子に接続するものとして説明する。
(Structure of conventional example and its problems) FIG. 1 shows the structure of a mixing circuit of a conventional ΔM2 band receiver. Here, when receiving one MW band, connect the changeover switches la, lb... to the m terminal, and when receiving the other 5Ill band,
This will be explained assuming that it is connected to S@child.

まず、■バンド受信の場合は、アンテナからの高周波電
流が入力切換スイッチ1aのm端を経てアンテナコイル
3に流入し、スイッチ1bによって接続されるバリコン
2aと同調コイル3aとトリマコンデンサ5とで構成さ
れる同調回路により所要の高周波信号が選択される。そ
の高周波電流は、スイッチ1cを経、結合コンデンサ1
3を通って高周波増輻用トランジスタ21のベースに入
る。14.15はトランジスタ21のバイアスを与える
抵抗器である。
First, in the case of band reception, the high frequency current from the antenna flows into the antenna coil 3 through the m end of the input selector switch 1a, and is composed of a variable capacitor 2a, a tuning coil 3a, and a trimmer capacitor 5 connected by the switch 1b. A desired high frequency signal is selected by a tuned circuit. The high frequency current passes through the switch 1c and the coupling capacitor 1
3 and enters the base of the high frequency amplification transistor 21. 14 and 15 are resistors that provide bias for the transistor 21.

トランジスタ18と19で差動増幅器が構成され、これ
にトランジスタ21が縦続に接続されて高周波入力が供
給さhる。トランジスタ18のベースにはダイオード1
6と抵抗器17とで構成されるバイアス回路が接続され
、他方のトランジスタ19のベースにはバッファトラン
ジスタ22が接続されてそれぞれバイアスが与えられる
。この部分は混合回路を構成しており、バッファトラン
ジスタ22にコンデンサ23を通して発振回路から局部
発振信号が与えられ、IFT20において中間周波出方
信号が取り出される。
Transistors 18 and 19 constitute a differential amplifier, to which a transistor 21 is connected in series to supply a high frequency input. Diode 1 is connected to the base of transistor 18.
A bias circuit consisting of a transistor 6 and a resistor 17 is connected thereto, and a buffer transistor 22 is connected to the base of the other transistor 19 to apply a bias to each. This part constitutes a mixing circuit, where a local oscillation signal is applied from an oscillation circuit to a buffer transistor 22 through a capacitor 23, and an intermediate frequency output signal is taken out at an IFT 20.

一方、局部発振回路は、スイッチ1dによってコイル7
が選択されるが、パディングコンデンサ9、トリマコン
デンサ10、局部Rtfl用バリコン2bで同調回路が
構成されており、コイル7のタップがスイッチ1f、コ
ンデンサ26を介してl−ランリスタ29のベースに接
続されている。トランジスタ29のコレクタは、スイッ
チ1eによってコイル7のコレクタ巻線に接続され、帰
還回路が構成されている。
On the other hand, the local oscillation circuit is operated by the coil 7 by the switch 1d.
is selected, but a tuning circuit is constituted by the padding capacitor 9, the trimmer capacitor 10, and the local Rtfl variable capacitor 2b, and the tap of the coil 7 is connected to the base of the l-run lister 29 via the switch 1f and the capacitor 26. ing. The collector of the transistor 29 is connected to the collector winding of the coil 7 by a switch 1e, forming a feedback circuit.

以上で、ベース同調型の局部発振回路を構成されている
。27.28はベースバイアス用の抵抗器である。この
発振回路で発振した局部発振信号がコンデンサ23を介
してバッファトランジスタ22に供給され、前述した混
合回路の動作が行なわれる。
With the above, a base-tuned local oscillation circuit is configured. 27 and 28 are base bias resistors. The local oscillation signal oscillated by this oscillation circuit is supplied to the buffer transistor 22 via the capacitor 23, and the above-described mixing circuit operates.

、 次に、Svバンド受信の場合は、スイッチ1a、1
b・・・1fが切換えられ、スイッチ接点はすべてS端
子に接続される。stiバンド用局部発振回路は、p1
リバンド用と全く同様の構成となっている。
, Next, in the case of Sv band reception, switch 1a, 1
b...1f is switched, and all switch contacts are connected to the S terminal. The local oscillation circuit for sti band is p1
It has exactly the same configuration as the one for rebanding.

この従来の回路方式では、局部発振回路の寄生振動やブ
ロッキング現象を抑制して安定性を高めるために、スイ
ッチ回路の最短配線や部品配置等に厳しい制約を受ける
ことは避けられず、特に、プリント基板の新設計やディ
ザインの変更等において設計の自由度が狭められる。
In this conventional circuit system, in order to improve stability by suppressing parasitic vibrations and blocking phenomena in the local oscillator circuit, it is unavoidable that strict restrictions are imposed on the shortest wiring of the switch circuit and component placement. The degree of freedom in design is reduced when designing a new board or changing the design.

(発明の目的) 本発明は、上記従来例の問題点を解消するもので、最短
配線ができない場合や、部品の配置が決定していて残余
のスペースに回路を追加し、あるいはディザイン的統−
を図る場合など、種々の条件下において、安定した局部
発振が得られるAM多バンド受信機を提供するものであ
る。
(Purpose of the Invention) The present invention solves the problems of the conventional method described above, and is intended to solve cases where the shortest wiring is not possible, where the placement of parts has been decided and a circuit is added to the remaining space, or where the circuit is added to the remaining space, or when it is necessary to
The purpose of the present invention is to provide an AM multiband receiver that can obtain stable local oscillation under various conditions, such as when aiming at the following.

(発明の構成) 上記目的を達成するために、局部発振回路として1MW
バンド受信用は、トランジスタのベース同調型発振回路
を、また5Iflバンド受信用は、FETのハートレー
型発振回路をそわぞれ設けるものである。
(Structure of the invention) In order to achieve the above object, as a local oscillation circuit, a 1MW
For band reception, a transistor base-tuned oscillation circuit is provided, and for 5Ifl band reception, a FET Hartley type oscillation circuit is provided.

(実施例の説明) 以下、図面により実施例を詳細に説明する。(Explanation of Examples) Hereinafter, embodiments will be described in detail with reference to the drawings.

第2図は、本発明の一実施例を示したもので、第1図と
同一符号のものは同一のものを示しており、また、30
はSIJバンド受信用局部発振回路を構成するFETで
ある。本実施例では、高周波回路及び混合回路は、従来
例のそれと全く同一構成であり、かつMt1’バンド受
信用の局部発振回路も同一構成どしているため、MIN
バンド受信時の動作も従来例における動作と同一である
。即ち、ト11Nバンド受信時はスイッチ接点がすべて
m端子に接続され、コイル3の選択により受信信号が取
り出され、高周波増幅用トランジスタ21に入力される
。一方、コイル7、トリマコンデンサlO等からなる同
調回路及びトランジスタ29等で構成される局部発振回
路から局部発振信号がバッファトランジスタ22に入力
さオシる。混合回路では、IFT20において中間周波
出力信号が取り出される。
FIG. 2 shows an embodiment of the present invention, in which the same reference numerals as in FIG.
is an FET constituting a local oscillation circuit for SIJ band reception. In this embodiment, the high frequency circuit and the mixing circuit have exactly the same configuration as that of the conventional example, and the local oscillation circuit for Mt1' band reception also has the same configuration, so the MIN
The operation during band reception is also the same as that in the conventional example. That is, when receiving the 11N band, all the switch contacts are connected to the m terminal, and the received signal is extracted by selecting the coil 3 and inputted to the high frequency amplification transistor 21. On the other hand, a local oscillation signal is inputted to the buffer transistor 22 from a tuning circuit including a coil 7, a trimmer capacitor lO, etc., and a local oscillation circuit including a transistor 29 and the like. In the mixing circuit, an intermediate frequency output signal is taken out at IFT20.

次に、Svバンド受信の場合は、スイッチla、lb・
・・1cをS端子に切換える。これにより、高周波回路
ではコイル4が選択され、所要の高周波信号が取り出さ
れて1−ランリスタ21に入力される。
Next, in the case of Sv band reception, switch la, lb,
...Switch 1c to S terminal. As a result, the coil 4 is selected in the high frequency circuit, and a required high frequency signal is extracted and input to the 1-run lister 21.

一方、FET30に電源回路が接続され、このFET3
0と、コイル8及び1〜リマコンデンサ12等からなる
同調回路とで構成されるSW用局部発振回路から局部発
振信号がバッファトランジスタ22に入力される。
On the other hand, a power supply circuit is connected to FET30, and this FET3
A local oscillation signal is input to the buffer transistor 22 from a local oscillation circuit for SW, which is composed of a tuning circuit including a coil 8 and a tuning circuit including a coil 8 and 1 to a lima capacitor 12 and the like.

SW用局部発振回路は、FET30のゲートがコイル8
の一端に、また、ソースがタップにそれぞれ接続される
ことにより、バー1〜レ一発振回路を構成している。
In the local oscillation circuit for SW, the gate of FET30 is connected to coil 8.
The sources are connected to one end of the bar 1 and the tap, respectively, thereby forming an oscillation circuit for bars 1 to 1.

このように本実施例では、Svバンド受信専用の局部発
振回路に寄生振動に有利なハートレー回路を採用してお
り、これによってSWバンドの安定した受信が可能とな
る。
In this way, in this embodiment, the Hartley circuit, which is advantageous for parasitic vibrations, is employed as the local oscillation circuit dedicated to Sv band reception, thereby making it possible to receive stable SW band reception.

(発明の効果) 以上説明したように、本発明によれば、各バンド受信専
用の局部発振回路がそれぞれそのバンドに対して有利な
回路構成になっているから、寄生振動の影響を極力少な
くすることができ、その結果、受信特性が向上すると同
時に、部品配置やディザイン変更等に対する制約が緩和
され、設計の自由度を増すことができる効果がある。
(Effects of the Invention) As explained above, according to the present invention, the local oscillation circuit dedicated to receiving each band has a circuit configuration that is advantageous for that band, so that the influence of parasitic vibrations is minimized. As a result, reception characteristics are improved, and at the same time, restrictions on component placement, design changes, etc. are relaxed, and the degree of freedom in design can be increased.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、従来例の回路図、第2図は、本発明の一実施
例の回路図である。 18〜1e・・・切換スイッチ、 2a、2b・・・バ
リコン、3,4 ・・アンテナコイル、7゜8 ・・・
同調回路用コイル、 10.12・・・ トリマコンデ
ンサ、 18,19,21.22・・・ 1−ランリス
タ、 20・・・IFT、 29・・・局部発振用トラ
ンジスタ、 30・・・FET0 特許出願人 松下電器産業株式会社 第1図 第2図
FIG. 1 is a circuit diagram of a conventional example, and FIG. 2 is a circuit diagram of an embodiment of the present invention. 18~1e...Selector switch, 2a, 2b...Variable condenser, 3,4...Antenna coil, 7゜8...
Coil for tuned circuit, 10.12... Trimmer capacitor, 18, 19, 21.22... 1-run lister, 20... IFT, 29... Transistor for local oscillation, 30... FET0 Patent application People Matsushita Electric Industrial Co., Ltd. Figure 1 Figure 2

Claims (1)

【特許請求の範囲】[Claims] AM多バンド受信機の局部発振回路として、Mllバン
ド受信用のトランジスタベース同調型発振回路と、Sυ
バンド受信用のFETハートレー型発振回路とを備えて
なり、各バンドの受信に対応して切換えることを特徴と
するAM多バンド受信機。
As a local oscillation circuit of an AM multi-band receiver, a transistor-based tuned oscillation circuit for Mll band reception and Sυ
An AM multi-band receiver comprising a FET Hartley type oscillator circuit for band reception, and switching in response to reception of each band.
JP11265483A 1983-06-24 1983-06-24 Am multiband receiver Pending JPS605631A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11265483A JPS605631A (en) 1983-06-24 1983-06-24 Am multiband receiver

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11265483A JPS605631A (en) 1983-06-24 1983-06-24 Am multiband receiver

Publications (1)

Publication Number Publication Date
JPS605631A true JPS605631A (en) 1985-01-12

Family

ID=14592133

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11265483A Pending JPS605631A (en) 1983-06-24 1983-06-24 Am multiband receiver

Country Status (1)

Country Link
JP (1) JPS605631A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4802238A (en) * 1986-07-29 1989-01-31 U. S. Philips Corporation Radio receiver

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS502483U (en) * 1973-05-09 1975-01-11

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS502483U (en) * 1973-05-09 1975-01-11

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4802238A (en) * 1986-07-29 1989-01-31 U. S. Philips Corporation Radio receiver

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