JPS6053944B2 - solid state imaging device - Google Patents
solid state imaging deviceInfo
- Publication number
- JPS6053944B2 JPS6053944B2 JP52067006A JP6700677A JPS6053944B2 JP S6053944 B2 JPS6053944 B2 JP S6053944B2 JP 52067006 A JP52067006 A JP 52067006A JP 6700677 A JP6700677 A JP 6700677A JP S6053944 B2 JPS6053944 B2 JP S6053944B2
- Authority
- JP
- Japan
- Prior art keywords
- field
- horizontal
- photosensitive cells
- photoelectric conversion
- vertical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
【発明の詳細な説明】
本発明はＣＣＤ、ＢＢＤのような電荷結合素子、或いは
ＭＯＳ−ＦＥＴを用いた固体撮像装置に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a solid-state imaging device using a charge-coupled device such as a CCD or a BBD, or a MOS-FET.
周知のように、例えばフォトダイオードのような光電変
換セルから闘られた光の強弱に対応した一絵素分の光電
変換信号は第１図で示すように水平方向に矢印１ａの方
向に読み出されて垂直方向の信号転送ライン（ＣＣＤ、
ＢＢＤ、或いはＭＯＳＦＥＴで構成される）ｌｂに至る
。As is well known, a photoelectric conversion signal for one pixel corresponding to the intensity of light emitted from a photoelectric conversion cell such as a photodiode is read out horizontally in the direction of arrow 1a as shown in Figure 1. Vertical signal transfer line (CCD,
lb (consisting of BBD or MOSFET).
ｌｃは例えばフォトダイオードのような光電変換セルで
あり、このようなセルが水平、垂直方向に多数個配列さ
れて成るものである。同図中破線で示した矢印１ａ’は
インターレースを考慮して前記の１ａで示した矢印とは
異なるフィールド期間で読み出される時の方向を示す。lc is a photoelectric conversion cell such as a photodiode, and is made up of a large number of such cells arranged horizontally and vertically. An arrow 1a' indicated by a broken line in the figure indicates a direction when data is read out in a field period different from that indicated by the arrow 1a, taking interlace into consideration.
また図中、斜線で示す領域ｌｄは光電変換セルｌｃから
得られた光電変換信号を垂直転送ラインｌｂに移送する
ためのゲート領域である。このゲート領域ｌｄはＩＣ製
作上から考えて単層、或いは二層配線構造となつており
、これらの構造は種々考えられるが、ここでは説明の明
白化のため斜線で示すだけにとどめる。また、クロスハ
ッチで示した領域ｌｆは水平方向に於て１つ隣りの絵素
信号同士が混ざり合わないための例えば絶縁体のような
もので構成されたチャンネルストッパー領域である。こ
のような水平方向に於ける各絵素間の絶縁分離領域で同
図で示した水平方向のみならず、垂直方向の各絵素間に
も通常は設けられるが説明の明白化のため同図では省略
している。以上のように構成された撮像領域に於いて、
各絵素信号は同図中のｌｇで示す矢印方向に沿つて・水
平の出力ラインｌｈに読み込まれ映像出力を得る。Further, in the figure, a region ld indicated by diagonal lines is a gate region for transferring the photoelectric conversion signal obtained from the photoelectric conversion cell lc to the vertical transfer line lb. This gate region ld has a single-layer or double-layer wiring structure from the standpoint of IC manufacturing, and although various structures are possible, they are only shown with diagonal lines here for the sake of clarity. Further, the cross-hatched area lf is a channel stopper area made of, for example, an insulator to prevent adjacent picture element signals from mixing with each other in the horizontal direction. Insulating isolation regions between each picture element in the horizontal direction are usually provided not only in the horizontal direction shown in the same figure, but also between each picture element in the vertical direction, but for clarity of explanation, the same figure is shown. It is omitted here. In the imaging area configured as above,
Each pixel signal is read into a horizontal output line lh along the arrow direction indicated by lg in the figure to obtain a video output.
この場合、映像の水平方向の解像度は撮像素子の水平方
向の長さを一定としたとき水平方向の一絵素の長さ（以
後水平セル寸法と呼ぶ）に逆比例門する。In this case, the horizontal resolution of the image is inversely proportional to the length of one pixel in the horizontal direction (hereinafter referred to as horizontal cell size) when the horizontal length of the image sensor is constant.
一絵素の長さを小さくすることはＩＣ製作上非常に困難
である。一方水平方向のサップリング周波数をＦ，とし
、水平方向の絵素数をｎ個としたとき、これらは互いに
次の関係を有する。但し、Ｈはテレビジョンの水平有効
走査期間を示す。従つて、絵素数が増加すればサンプリ
ング周波数、或いはク罎ンク周波数が増加し、その結果
、転送効率の低下、或いはスパイクノイズの増加等によ
つて映像の画質が低下することは周知の事実である。It is extremely difficult to reduce the length of one pixel in terms of IC manufacturing. On the other hand, when the horizontal sampling frequency is F and the number of picture elements in the horizontal direction is n, these have the following relationship with each other. However, H indicates the horizontal effective scanning period of the television. Therefore, it is a well-known fact that as the number of picture elements increases, the sampling frequency or clock frequency increases, and as a result, the image quality of the video deteriorates due to a decrease in transfer efficiency or an increase in spike noise. be.
本発明の目的は実質的に水平セル寸法を小さくすること
により水平解像度の向上を図るとともに、水平方向のサ
ンプリング周波数、或いはクロック周波数を従来の１１
２て済ますことによりＳ／Ｎの良い映像信号を得るとこ
ろにある。An object of the present invention is to improve the horizontal resolution by substantially reducing the horizontal cell size, and to increase the horizontal sampling frequency or clock frequency from the conventional 11.
By doing so, a video signal with a good S/N ratio can be obtained.
すなわち本発明は垂直転送ラインの両側に設けられた光
電変換セルからの絵素信号を１フィールド毎に交互に垂
直転送ラインに読み込むことにより、垂直転送ラインの
本数とチャンネルストッパーの本数の減少を図るもので
ある。以下にその実施例について説明する。That is, the present invention aims to reduce the number of vertical transfer lines and the number of channel stoppers by alternately reading pixel signals from photoelectric conversion cells provided on both sides of the vertical transfer line into the vertical transfer line every field. It is something. Examples thereof will be described below.
第２図において各領域を示す記号は第１図の各信号と英
字のみ対応して同一のものを示す。又、ここで垂直水平
転送ラインは２相駆動のＣＣＤよりなるものとし、垂直
転送ラインの転送電極は、知られているインター・ライ
ン◆トランスファータイプのセンサのように、光電変換
セルに対応して設けられているとする。図示した通り、
この実施例では垂直転送ライン２ｂの両側に設けられた
光電変換セル２ｃは垂直方向にも順次設けられている。
すな一わち今、水平の２絵素領域に着目すれば、この領
域はフォトダイオード２個区間，ゲート領域２本区間，
垂直転送ライン，チャンネルストッパー領域が各々１本
区間の長さから構成されている。したがつて第１図に示
した構成のものにくらべて２、絵素領域につき垂直転送
ラインとチャンネルストッパーが各々１本づつ減少して
おり、これは１絵素の水平セル寸法の微小化が図れたこ
とを意味する。次に、垂直方向の１：４のインターレー
スを考・えたときの信号読み出しタイミングについて説
明する。In FIG. 2, the symbols indicating each area correspond to the respective signals in FIG. 1 only by alphabetical characters, indicating the same thing. Also, here, the vertical and horizontal transfer lines are assumed to be composed of two-phase driven CCDs, and the transfer electrodes of the vertical transfer lines are made to correspond to photoelectric conversion cells, as in the known inter-line ◆transfer type sensor. Suppose that it is set. As shown,
In this embodiment, the photoelectric conversion cells 2c provided on both sides of the vertical transfer line 2b are also sequentially provided in the vertical direction.
In other words, if we focus on the horizontal two-pixel area, this area consists of two photodiode sections, two gate area sections,
The vertical transfer line and the channel stopper area each have a length of one section. Therefore, compared to the configuration shown in Figure 1, the number of vertical transfer lines and channel stoppers is reduced by one per pixel area, and this is due to the miniaturization of the horizontal cell size of one pixel. It means that it was achieved. Next, signal readout timing will be explained when considering 1:4 interlacing in the vertical direction.
今、奇数番目の水平走査ラインに相当する。水平方向に
多数個並べた光電変換セル列のうち、同図では左端から
数えて奇数番目に存在する光電変換セルからの光電変換
信号は第１フィールド期間に於いて、ゲート電極２ｄに
加えられるゲートパルスにより同図中に実線で示した矢
印の方向１Ｆの如く垂直転送りロックパルスの一方が印
加されている垂直転送ラインに読み込まれる。This corresponds to the odd-numbered horizontal scanning line. Among the rows of photoelectric conversion cells arranged horizontally, photoelectric conversion signals from odd-numbered photoelectric conversion cells counted from the left end in the figure are applied to the gate electrode 2d during the first field period. The pulse causes the vertical transfer to be read into the vertical transfer line to which one of the lock pulses is applied, as shown in the direction 1F of the arrow shown by the solid line in the figure.
次の第２フィールド期間では、水平方向に於いて偶数番
目に存在する光電変換セルからの光電変換信号はゲート
電極２ｄ″に加えられるゲートパルスにノより同図中に
於いて左の方向に点線で示した矢印２Ｆの如く垂直転送
ラインに読み出される。また第３フィールド期間では、
偶数番目の水平走査ラインに相当する水平方向の光電変
換セル列のうち奇数番目に存在する光電変換セルからの
光電変換信号が同図中の一点鎖線で示す矢印３Ｆの如く
垂直転送ラインに読み込まれる。これは、第１フィール
ドと同様ゲート電極２ｄにゲートパルスが印加され、か
つ垂直転送りロックパルスの第１フィールドと異なる相
のパルスが加わることによつて可能となる。更に次の第
４フィールド期間に於いては、ゲート電極２ｄ″に加え
るゲートパルスと、第３フィールドと同相の転送りロッ
クの印加によつて同図で二点鎖線で示す矢印４Ｆの如く
光電変換信号が読み出される。In the next second field period, the photoelectric conversion signals from the even-numbered photoelectric conversion cells in the horizontal direction are shown by the dotted line in the left direction in the figure due to the gate pulse applied to the gate electrode 2d''. It is read out to the vertical transfer line as shown by the arrow 2F. Also, in the third field period,
The photoelectric conversion signals from the odd-numbered photoelectric conversion cells in the horizontal photoelectric conversion cell rows corresponding to the even-numbered horizontal scanning lines are read into the vertical transfer line as indicated by the arrow 3F indicated by the dashed-dotted line in the figure. . This is possible by applying a gate pulse to the gate electrode 2d as in the first field, and by applying a pulse having a phase different from that of the first field of the vertical transfer lock pulse. Furthermore, in the subsequent fourth field period, by applying a gate pulse to the gate electrode 2d'' and a transfer lock having the same phase as the third field, photoelectric conversion occurs as shown by the arrow 4F indicated by a two-dot chain line in the figure. The signal is read out.
第１フィールドと第２フィールド、及び第３フィールド
と第４フィールドで読み出される映像信号は水平転送ラ
インに変換されて各々同一位相となつてしまう。The video signals read out in the first field, the second field, and the third field and the fourth field are converted into horizontal transfer lines and have the same phase.
したがつて、この位相を元に戻すために、第１フィール
ド（または第３フィールド）と第２フィールド（または
第４フィールド）ての水平映像信号に於いて位相を約１
８０ル異なるように読み出す必要がある。この方法は撮
像板内部に於いても可能であるが外部回路で行う方法を
第３図で示す。Therefore, in order to restore this phase, the phase of the horizontal video signal of the first field (or third field) and second field (or fourth field) is changed by approximately 1.
It is necessary to read the data 80 times differently. Although this method can be performed inside the image pickup plate, a method using an external circuit is shown in FIG.
３１は本実施例による撮像板でありこれから得られた出
力は水平方向に１８０で信号が遅延する遅延回路３２と
１フィールド毎に開閉するスイッチ回路３３とに導かれ
ている。Reference numeral 31 denotes an image pickup plate according to this embodiment, and the output obtained from this is led to a delay circuit 32 which delays the signal by 180 in the horizontal direction, and a switch circuit 33 which opens and closes every field.
第１フィールド期間と第３フィールド期間に於いてスイ
ッチＳＷｌにのみが閉じ、ＳＷ２は開いている。第２フ
ィールド期間と第４フィールド期間に於いてはＳＷｌが
開き、ＳＷ２が閉じて前記の遅延回路３２を経て出力３
４が得られる。このようにすると第１フィールド（第３
フィールド）と第２フィールド（第４フィールド）での
水平映像信号は位相が各々１８０ー異なつたものとして
得られ、被写体像の各光学点と各光電変換セルが正しく
対応した映像信号が得られる。この動作を第４図にもと
づいて更に詳述する。During the first field period and the third field period, only switch SW1 is closed and SW2 is open. During the second field period and the fourth field period, SW1 is opened, SW2 is closed, and the output 3 passes through the delay circuit 32.
4 is obtained. In this way, the first field (third
The horizontal video signals in the second field (field) and the second field (fourth field) are obtained as having a phase difference of 180 degrees, and a video signal in which each optical point of the subject image correctly corresponds to each photoelectric conversion cell is obtained. This operation will be explained in more detail based on FIG.
今、光電面上での被写体が同図イのように、黒４１と白
４２が交互にピッチＰｄ／２でくり返されている場合に
ついて考える。ここで示したＰｄの値を第２図で示した
本発明の固体撮像素子に於ける垂直転送ラインの水平方
向のピッチと等しいものとする。すると第１フィールド
（第３フィールド）ｎ番目の水平走査信号は第２図口の
如く得られる。第２フィールド（第４フィールド）のｎ
番目（ｎは任意の整数）の水平走査信号は図３で述べた
ように第１フィールドのそれとは位相が１８０よ遅れた
ものとして得られるので第４図ハのようになる。従つて
、第１フィールド（第３フィールド）と第２フィールド
（第４フィールド）のｎ番目の水平走査信号をテレビジ
ョン受像機にディスプレイする際、同じ走査線上にくる
ようにすれば目の視覚特性から考えて第１フィールド（
第３フィールド）と第２フィールド（第４フィールド）
との再現された光学サンプリング像が重畳されて、結果
として第４図二に示すような映像信号波形をテレビジョ
ンに送出したときとほぼ等価な像が得られる。Now, let us consider a case where the object on the photocathode has black 41 and white 42 alternately repeated at a pitch Pd/2, as shown in FIG. It is assumed that the value of Pd shown here is equal to the horizontal pitch of the vertical transfer lines in the solid-state imaging device of the present invention shown in FIG. Then, the n-th horizontal scanning signal of the first field (third field) is obtained as shown at the beginning of Figure 2. n of the second field (fourth field)
As described in FIG. 3, the horizontal scanning signal of the th (n is any integer) is obtained with a phase delayed by 180 degrees from that of the first field, so that the signal is as shown in FIG. 4C. Therefore, when displaying the n-th horizontal scanning signal of the first field (third field) and second field (fourth field) on a television receiver, if they are placed on the same scanning line, the visual characteristics of the eye can be improved. Considering this, the first field (
3rd field) and 2nd field (4th field)
The reproduced optical sampling images are superimposed, and as a result, an image almost equivalent to that when the video signal waveform shown in FIG. 4-2 is sent to a television is obtained.
同図で示すように、この映像信号波形はピッチがＰｄ／
２でくり返される黒白のパターンを解像したものと等価
である。As shown in the figure, this video signal waveform has a pitch of Pd/
This is equivalent to resolving a black and white pattern repeated in 2.
従つて、従来の第１図で示す場合はピッチＰｄの黒白パ
ターンしか解像できないのに比べて、本実施例の固体撮
像装置はピッチがＰｄ／２まで解像できる。Therefore, while the conventional case shown in FIG. 1 can only resolve black and white patterns with a pitch of Pd, the solid-state imaging device of this embodiment can resolve up to a pitch of Pd/2.
すなわち、水平の解像度が向上する。上記実施例より明
らかなように本発明によればＩＣの微細加工技術の困難
性を増すことなく、水平の解像度を向上させることがで
きる特徴がある。That is, horizontal resolution is improved. As is clear from the above embodiments, the present invention has the feature that horizontal resolution can be improved without increasing the difficulty of IC microfabrication technology.
第１図は従来の固体撮像装置の構成図、第２図は本発明
の一実施例による固体撮像装置の構成・図、第３図は要
部の回路構成図、第４図は信号波形図である。
２ｂ・・・・・・垂直転送ライン、２ｃ・・・・・・光
電変換セル、２ｄ，２ｄ″・・・・・・ゲート領域。FIG. 1 is a configuration diagram of a conventional solid-state imaging device, FIG. 2 is a configuration diagram of a solid-state imaging device according to an embodiment of the present invention, FIG. 3 is a circuit configuration diagram of main parts, and FIG. 4 is a signal waveform diagram. It is. 2b... Vertical transfer line, 2c... Photoelectric conversion cell, 2d, 2d''... Gate region.
Claims (1)
像を電気信号に変換する感光セルと、前記感光セルより
得られた光電変換信号を画像の垂直方向に順次転送、或
いは送出する複数の垂直ラインと、これらの垂直ライン
より得られた各信号を水平方向に読み出す水平ラインを
備え、ライン垂直ラインの両隣りに各々ゲート手段を介
して前記感光セルを順次設けて垂直ラインの両側に縦方
向に複数の感光セルが配置されるようにすると共に１つ
の垂直ラインの任意の一部に対して横方向に２個の感光
セルが配置されるようにしたことを特徴とする固体撮像
装置。1. A large number of photosensitive cells arranged vertically and horizontally, which convert each optical point image of an optical image of a subject into an electrical signal, and a plurality of photosensitive cells that sequentially transfer or send out the photoelectric conversion signals obtained from the photosensitive cells in the vertical direction of the image. and a horizontal line for horizontally reading out each signal obtained from these vertical lines, and the photosensitive cells are sequentially provided on both sides of the vertical line via gate means, so that the photosensitive cells are sequentially provided on both sides of the vertical line. A solid-state imaging device characterized in that a plurality of photosensitive cells are arranged in the vertical direction and two photosensitive cells are arranged in the horizontal direction with respect to any part of one vertical line. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52067006A JPS6053944B2 (en) | 1977-06-06 | 1977-06-06 | solid state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52067006A JPS6053944B2 (en) | 1977-06-06 | 1977-06-06 | solid state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54928A JPS54928A (en) | 1979-01-06 |
| JPS6053944B2 true JPS6053944B2 (en) | 1985-11-28 |
Family
ID=13332400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52067006A Expired JPS6053944B2 (en) | 1977-06-06 | 1977-06-06 | solid state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6053944B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62140126U (en) * | 1986-02-27 | 1987-09-04 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57145483A (en) * | 1981-03-03 | 1982-09-08 | Mitsubishi Electric Corp | Solid-state image pickup device |
| JPS58111491A (en) * | 1981-12-25 | 1983-07-02 | Nippon Kogaku Kk <Nikon> | Solid-state image pickup device |
| JPS5996765A (en) * | 1982-11-24 | 1984-06-04 | Mitsubishi Electric Corp | Semiconductor image pick-up device |
-
1977
- 1977-06-06 JP JP52067006A patent/JPS6053944B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62140126U (en) * | 1986-02-27 | 1987-09-04 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54928A (en) | 1979-01-06 |
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