JPS6052632U - Power semiconductor devices - Google Patents
Power semiconductor devicesInfo
- Publication number
- JPS6052632U JPS6052632U JP14467183U JP14467183U JPS6052632U JP S6052632 U JPS6052632 U JP S6052632U JP 14467183 U JP14467183 U JP 14467183U JP 14467183 U JP14467183 U JP 14467183U JP S6052632 U JPS6052632 U JP S6052632U
- Authority
- JP
- Japan
- Prior art keywords
- power semiconductor
- semiconductor devices
- semiconductor element
- main body
- power amplification
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は従来の電力増幅用トランジスタの形状を示す斜
視図、第2図は従来の電力増幅用トランジスタの側面図
、第3図は従来の電力増幅用トランジスタをプリント基
板に取付けた状態を示す側面図、第4図は従来の電力増
幅用トランジスタの問題点を説明するための図、第5図
は従来の電力増幅用トランジスタの取付は手順を説明す
るための図、第6図A、同図Bは本考案になる電力用半
導体素子を電力増幅用トランジスタに適用した場合の一
実施例を示す側面図、第7図A、同図Bは本考案になる
電力用半導体素子を電力増幅用トランジスタに適用した
場合の他の実施例を示す側面図である。
10・・・電力増幅用トランジスタ(電力用半導体素子
)、11・・・電力増幅用トランジスタ本体、12・・
・リード部、13・・・半田付部、B・・・電力増幅用
トランジスタ本体11が放熱器と接する面。Fig. 1 is a perspective view showing the shape of a conventional power amplification transistor, Fig. 2 is a side view of a conventional power amplification transistor, and Fig. 3 shows a conventional power amplification transistor mounted on a printed circuit board. A side view, FIG. 4 is a diagram for explaining the problems of conventional power amplification transistors, FIG. 5 is a diagram for explaining the procedure for installing a conventional power amplification transistor, and FIG. Figure B is a side view showing an example in which the power semiconductor device of the present invention is applied to a power amplification transistor, and Figures 7A and 7B show the power semiconductor device of the present invention used for power amplification. FIG. 7 is a side view showing another embodiment when applied to a transistor. 10... Power amplification transistor (power semiconductor element), 11... Power amplification transistor main body, 12...
- Lead part, 13...Soldering part, B...The surface where the power amplification transistor main body 11 comes into contact with the heat sink.
Claims (1)
、該電力半導体素子のリード部の先端が、該電力用半導
体素子本体の中心に対して、該電力用半導体素子本体が
前記放熱器と接する面とは反対の側にオフ・センターす
るよう前記リード部を形成させたことを特徴とする電力
用半導体素子。A power semiconductor element having a heat radiator attached to the main body, wherein the tip of the lead part of the power semiconductor element is in contact with the heat radiator with respect to the center of the power semiconductor element main body. A power semiconductor device, characterized in that the lead portion is formed off-center on a side opposite to the surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14467183U JPS6052632U (en) | 1983-09-19 | 1983-09-19 | Power semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14467183U JPS6052632U (en) | 1983-09-19 | 1983-09-19 | Power semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6052632U true JPS6052632U (en) | 1985-04-13 |
Family
ID=30322551
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14467183U Pending JPS6052632U (en) | 1983-09-19 | 1983-09-19 | Power semiconductor devices |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6052632U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01248549A (en) * | 1988-03-30 | 1989-10-04 | Toshiba Corp | Semiconductor device |
-
1983
- 1983-09-19 JP JP14467183U patent/JPS6052632U/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01248549A (en) * | 1988-03-30 | 1989-10-04 | Toshiba Corp | Semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6052632U (en) | Power semiconductor devices | |
JPS59103450U (en) | circuit unit | |
JPS60179068U (en) | power converter | |
JPS6039252U (en) | electronic components | |
JPH0217854U (en) | ||
JPS59135645U (en) | Mounting structure of heat sink and power transistor | |
JPS59195746U (en) | Semiconductor device circuit assembly | |
JPS58129661U (en) | hybrid integrated circuit board | |
JPS59177957U (en) | radiator | |
JPS5958947U (en) | Semiconductor element mounting equipment | |
JPS5872845U (en) | semiconductor equipment | |
JPS587351U (en) | Heat dissipation mechanism | |
JPS59127270U (en) | printed circuit board equipment | |
JPS5937742U (en) | Heat dissipation structure | |
JPS6127247U (en) | Heat dissipation device for semiconductor devices | |
JPS58127780U (en) | speaker holder | |
JPS594646U (en) | Heat sink mounting device | |
JPS5967943U (en) | Cooling structure for semiconductor devices | |
JPS5952641U (en) | Heat dissipation device for semiconductor package | |
JPS58164243U (en) | transistor mounting device | |
JPS6088557U (en) | Heat dissipation device for semiconductor devices | |
JPS6144871U (en) | Mounting structure of transistor on printed circuit board | |
JPS60124094U (en) | printed wiring board | |
JPS60185345U (en) | heat sink device | |
JPS58166048U (en) | IC package |