JPS6047308A - Method of producing watertight power cable - Google Patents
Method of producing watertight power cableInfo
- Publication number
- JPS6047308A JPS6047308A JP15375583A JP15375583A JPS6047308A JP S6047308 A JPS6047308 A JP S6047308A JP 15375583 A JP15375583 A JP 15375583A JP 15375583 A JP15375583 A JP 15375583A JP S6047308 A JPS6047308 A JP S6047308A
- Authority
- JP
- Japan
- Prior art keywords
- compound
- watertight
- power cable
- twisting
- die
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Processes Specially Adapted For Manufacturing Cables (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 [発明の背累ど目的] この発明は水密型電カケーブルの製造方法に関りる。[Detailed description of the invention] [Background and purpose of the invention] The present invention relates to a method of manufacturing a watertight electric power cable.
従来、水蜜紫電ツノケーブルの製造方法としては、予め
素線上にコンパウンドを被覆し、これを撚線し/、、:
1G、該導体を加熱して該コンパウンドを溶融軟化させ
−C素線間の隙間を充填する方法が主としく採用されて
いる。しかしながら、この方法は製造工程が視外で!l
i!l造コストハコストると共に、フンパウンドを溶融
軟化するため熱風の温度管外が必要であり、での上撚線
の走行スピードおよび被覆の厚さにより微妙な管理が必
要でそのための条イ′[把択が勤しい。コンパウンドの
充填度のバラツキにより水密特性が不安定になるとか、
内部半導電層の電極不整により電気特性が不安定になる
等の問題がある。Conventionally, the manufacturing method for Mizumitsu Shiden Horn Cable was to coat the bare wires with a compound in advance, and then twist the wires.
1G, a method is mainly adopted in which the conductor is heated to melt and soften the compound to fill the gap between the -C wires. However, this method ignores the manufacturing process! l
i! In addition to increasing manufacturing costs, hot air is required outside the tube to melt and soften the powder, and delicate management is required depending on the running speed of the twisted wire and the thickness of the coating. I am very selective. Watertight properties may become unstable due to variations in the filling degree of the compound.
There are problems such as electrical characteristics becoming unstable due to electrode irregularities in the internal semiconducting layer.
この発明の目的は、上述しIこ従来技術の欠点を解消し
、水密型導体の製造]ニ程を簡略化し、かつ水密特性、
電気特性等を安定、向上uしめた電ツノケーブルを製造
出来る製造方法を提供することにある。The purpose of the present invention is to overcome the above-mentioned drawbacks of the prior art, simplify the manufacturing process of watertight conductors, and improve watertight properties.
An object of the present invention is to provide a manufacturing method capable of manufacturing an electric horn cable with stable and improved electrical characteristics.
[発明の概賛]
この発明の発明者らは電カケーブルの索線間に体積抵抗
率1’O” 〜106Ω−cm、130℃におりるムー
ニー粘疫15〜25を右づる流動性の良好<>半導電性
コンパウンドを撚線作業時に注入づることににり上記の
目的を達成Jることかできることを見い出した。[Summary of the Invention] The inventors of the present invention have found that the volume resistivity between the wires of an electric power cable is 1'O" to 106 Ω-cm, and the fluidity of Mooney's viscosity is 15 to 25 at 130°C. It has been found that the above objects can be achieved by injecting a semiconductive compound during the wire twisting process.
この発明で使用される注入コンパウンドの体積抵抗率を
上記の数(1b範囲内限定した理由について説明−4る
と、該コンパウンドは半導電性を有することが必要であ
るところ、その体積抵抗率が1030−ctn未満では
カーボンおよび軟化剤の含右バlを増加さゼることが必
要となりコンパウンドのコストアップをもたらし、一方
10日Ω−cmを越える場合は導体どの電位差に問題が
生ずるからである。Explanation of the reason why the volume resistivity of the injection compound used in this invention is limited to the above number (1b range)-4: The compound needs to have semiconductivity, but the volume resistivity is If it is less than 1030-ctn, it will be necessary to increase the content of carbon and softener, which will increase the cost of the compound, while if it exceeds 10 Ω-cm, problems will occur with the potential difference between the conductors. .
次に、該コンパウンドの130℃におけるムーニー粘度
を上記の数値範囲に限定した理由について説明す゛ると
、15未満では該コンパウンドの付着mが不均一であり
、かつ該コンパウンドの粘着性が高すぎて注入作業性が
悪くなり、また25を越える場合は該コンパウンドのイ
」着Mが不均一であると共に該コンパウンドが1III
!1ぎるために注入作業性が恕くなるからである。さら
に、該コンパウンドのムーニー粘度の人ささは内部半導
電層および水密性にも影響を及ぼし、表′1に示される
ようにこの発明で限定された数値範囲内では内部半導電
層の乱れはなく、水密性も優れでいる。Next, the reason why the Mooney viscosity of the compound at 130°C was limited to the above numerical range is that if it is less than 15, the adhesion m of the compound is uneven and the tackiness of the compound is too high, making it difficult to inject. Workability deteriorates, and if the number exceeds 25, the compound is unevenly coated and the compound is 1III.
! This is because the injection workability becomes poor due to the large amount of water. Furthermore, the moderate Mooney viscosity of the compound also affects the internal semiconducting layer and watertightness, and as shown in Table 1, there is no disturbance of the internal semiconducting layer within the numerical range limited by this invention. It also has excellent watertightness.
第1表
以上説明したJ、うに、コンパウンドの体積抵抗率おJ
、び′130℃にJj LJるムーニー粘度を上記数(
iQ範囲に限定づることにJ:す、押出機ど撚りダイス
間の:1ンバウンド搬送パイj内をスムーズに通過し、
かつ注入し易い流動性の良々fな半導電性コンパウンド
をj8択りることがeさるbのである。The volume resistivity of J, sea urchin, and compound as explained above in Table 1
, and the Mooney viscosity at Jj LJ at 130°C is expressed as the above number (
Limited to the iQ range, it passes smoothly through the inbound conveyance pipe between the extruder and the twisting die,
It is also important to select a semiconductive compound that is easy to inject and has good fluidity.
なお、この発明で使用されるコンパウンドの組成どして
は、ブチルゴム100重ω部に対し導電性カーボン20
〜60重量部、パラフィンワックス15〜2Sffi量
部、ボリブデン5〜201m部、ペトロラタム5〜1o
ai部おJ、び場合によっては他の適当な添加剤を少量
配合してなる乙のが好ましい。即ち、導電性カーボンの
配合量が20重量部以−トではコンパウンドの体積抵抗
率が大きくなり過ぎ、また60重り部以上ではコンパウ
ンドの流動性が悪くなるので」−記数(1f1範囲内の
配合■とすることが好ましい。パラフィンワックス、ボ
リブデン、ペトロラタム等の配合用は」ンバウンド製造
時の作業性、注入時の流動性、素線との密着性等のバラ
、ンスを考癒しく適宜調整される。The composition of the compound used in this invention is 100 parts by weight of butyl rubber and 20 parts by weight of conductive carbon.
~60 parts by weight, 15-2 parts of paraffin wax, 5-201 parts of bolybdenum, 5-1 o of petrolatum
It is preferable to mix ai and j, and optionally other suitable additives in small amounts. That is, if the amount of conductive carbon added is less than 20 parts by weight, the volume resistivity of the compound becomes too large, and if it is more than 60 parts by weight, the fluidity of the compound becomes poor. It is preferable to use the following formula.For compounding of paraffin wax, bolybdenum, petrolatum, etc., it should be adjusted as appropriate to take into account the balance of workability during unbound manufacturing, fluidity during injection, adhesion to the strands, etc. Ru.
[実施例]
次に、添4=Jの図面を参照してこの発明の一実施例に
ついて説明すると、本実施例は、基本的には第1図に示
!JJ、うに、直線上に並べて段間された第1.第2お
よび第3の撚合装置(1)、(It)Jjよび(Ill
)と、第′IJ3よび第2の撚含装同(1)および(
II)に水密コンパウンド搬送パイプ1おにび2を介し
て連結された水密コンパウンド押出傭3 ;33 J:
び4を用いて遂行される。[Embodiment] Next, an embodiment of the present invention will be described with reference to the drawings in Attachment 4=J.This embodiment is basically shown in FIG. JJ, sea urchin, the first row of rows arranged in a straight line. The second and third twisting devices (1), (It) Jj and (Ill
), and the second twist inclusion (1) and (
II) through a watertight compound conveying pipe 1 and 2; 33 J:
and 4.
史に、各撚合工程について説明するど、まず第1の撚合
装置(1)において、各索線5を撚り合わTl’ lF
、’iに、前記組成の半導電性水密コンパウンド6を押
出機3を用いて水密コンパウンド搬送バイブ1を介して
撚りダイス7中に直接注入し、しかしくこれを撚線しな
がら素線5間に注入し、引き続き超1fJ!合金絞りダ
イス8で上記素FJ15間に注入された水密コンパウン
ド6を絞って当該コンパウンド6のイ]η充填mを適用
に調整りる。この絞りItは上記絞りダイス8の内径に
よって決まるが、絞り過ぎると水密性が悪くなり、逆に
絞りが弱く水密フンパウンド6の(=J着ωが多いと後
述の最外撚線層を/f縮した時に、これが素線の撚目か
らはみ出してしまいケーブルの電気特性を茗しく低下さ
ける要因となる。適当な絞り岳は絞りダイス8の内径を
次の、1−うな寸法とした時に得られ、事実このような
絞りダイスを用いて撚線9を引き1友けば前記のj:う
な問題−しなく安定した品質を保シ[出来ることが分か
った。To explain each twisting process, first, in the first twisting device (1), each cable wire 5 is twisted together Tl' lF
, 'i, a semiconductive watertight compound 6 having the above composition is directly injected into the twisting die 7 through the watertight compound conveying vibrator 1 using the extruder 3, and is then twisted between the strands 5 while being twisted. Injected into and continued to achieve super 1fJ! The watertight compound 6 injected between the base FJs 15 is squeezed using an alloy drawing die 8 to adjust the a]η filling m of the compound 6 to suit the application. This aperture It is determined by the inner diameter of the aforesaid drawing die 8, but if the aperture is too narrow, the watertightness will deteriorate; When f-shrinked, this protrudes from the strands of the strands and causes a severe deterioration of the electrical properties of the cable.A suitable drawing ridge can be obtained when the inner diameter of the drawing die 8 is set to the following 1- In fact, it has been found that if such a drawing die is used to draw the stranded wires 9 and 1 strand, it is possible to maintain stable quality without the above-mentioned problem.
1)= (Nxd ) / (π)−d但し、Dは絞り
径
Nは最外層の素線数
dは最外層の木FA径
πは3.14
である。1)=(Nxd)/(π)-dwhere, D is the aperture diameter N, the number of strands in the outermost layer d, and the tree FA diameter π in the outermost layer is 3.14.
なお、10はダイスホルタ、11はアスベス]へ保温層
、12は加熱用に−タ線、131よ素線5を巻いたボビ
ン、14は各ボビン13を固定し且つ回転さUるケージ
、15はガイド[1−ルである。In addition, 10 is a die halter, 11 is a heat insulating layer for asbestos, 12 is a -ta wire for heating, a bobbin around which 131 wire 5 is wound, 14 is a cage that fixes each bobbin 13 and rotates, and 15 is a cage. Guide [1-le].
以上のようにして製造された撚線9(第2図参照)は、
次に第2の撚合装置(1)に導入され、そしC上記撚線
9上に更に撚線層16が形成され、同n、′jに当該撚
線層16の素線5問に前記組成の半導電性水密コンパウ
ンド6が注入される。なお、撚1nA Jj法および水
密コンパウンド注入り法につい(の説明は、第1の撚合
装置(1)の所ひ説明した内容ど本質的に同じなので省
略りる。The stranded wire 9 (see Figure 2) manufactured as described above is
Next, it is introduced into the second twisting device (1), and a twisted wire layer 16 is further formed on the above twisted wire 9, and the above-mentioned 5 wires of the twisted wire layer 16 are A semiconducting watertight compound 6 of the composition is injected. Note that the explanation of the twisting 1nA Jj method and the watertight compound injection method will be omitted since the contents described for the first twisting device (1) are essentially the same.
第2の撚合装置(11)で製造された撚線17(第3図
参照)は、次に第3の撚合装置1ll)に導入され、そ
して上記IFil17上に最外撚線層′18が形成され
る。最外撚線層′18は絞りダイス(B−縮ダイス)で
適宜絞られ(圧縮され)、シかして、その内部の半導電
性水蜜コンパウンド6を各素線5に良く密着させ、同時
に当該撚線層18外への滲み出しを防止り−る。The stranded wire 17 (see FIG. 3) produced in the second stranding device (11) is then introduced into the third stranding device 1ll) and is deposited on the outermost stranded wire layer '18 on the IFil 17. is formed. The outermost stranded wire layer '18 is suitably squeezed (compressed) with a drawing die (B-shrinking die) and sintered to make the semiconductive water honey compound 6 inside it adhere well to each strand 5, and at the same time. This prevents leakage to the outside of the twisted wire layer 18.
第3の撚合装置(lit )の宿命は、水密コンパウン
ド搬送パイプ1 d3よび水密]ンバウンド押出機3が
ない以外、第1図の撚合装置(1)ど本質的に同じであ
り、またここで行なわれる撚線方法も第1の撚合装@(
I)の所で行なわれるそれと木質的に103しなので詳
しい説明は省略する。The fate of the third twisting device (lit) is essentially the same as that of the twisting device (1) in FIG. The twisting method carried out in
Since this is fundamentally different from that carried out in I), detailed explanation will be omitted.
以」二の第3の撚合装置(1■)にJ:って製造された
撚線15)(第4図参照)番よ、引取ロール20を紅゛
C別に用意した巻取ドラム(図示しない、、)に巻き取
られる。The stranded wire 15) (see Fig. 4), which was produced by It will be taken up by (,,).
然る後、>j11N’稈において、前t、11!撚線1
9士に任意のゴム・プラスデック被覆層(図示しない。After that, in >j11N' culm, front t, 11! Stranded wire 1
9. An optional rubber/PlusDeck coating layer (not shown).
)が施される。) will be applied.
(発明の効果]
プヂルゴム100重量部に対し導電性カーボン60重化
部、ぺ1・1」ラタム10重rXi部、パラフィンワッ
クス20車り部、ボリブデン17Ll’ji1部からな
る、体積抵抗率2 X 103Q−cm、130°Cに
Jj Iノるムーニー粘度19をhりるコンパウンドを
ミキサーで沢N+製造し、これを撚線!!I造時に押i
ff 111を用い゛Cコンパウンド搬送パイプを介し
て撚りダイスに直接te1人し、撚線しながら素線間に
注入し、絞りダイスで(jl =W充1111mを調整
した後、圧縮ダイスを通しC導体描成7−1−12/3
.2、導1本断面積゛150−の撚線導体を製造し、こ
の導体を使用し−C水密型架橋ポリエチレン電力ケーブ
ルを製造した時の、このケーブルの特性は次のとJ5り
であった。(Effect of the invention) Volume resistivity 2X, consisting of 100 parts by weight of Pudil rubber, 60 parts by weight of conductive carbon, 10 parts by weight of P1.1'' latum, 20 parts by weight of paraffin wax, and 1 part by weight of bolybdenum 17Ll'ji. A compound with a Mooney viscosity of 19 is prepared at 103Q-cm and 130°C using a mixer, and this is pressed when making stranded wires.
Using ff 111, transfer the C compound directly to the twisting die through the C compound conveying pipe, inject it between the wires while twisting the wire, and use the drawing die to adjust (jl = W filling 1111m), then pass through the compression die to C Conductor drawing 7-1-12/3
.. 2. When a stranded conductor with a cross-sectional area of 150 mm was manufactured and a -C watertight cross-linked polyethylene power cable was manufactured using this conductor, the characteristics of this cable were as follows: .
(a)導体の水密性
リンプル長5 In 、水圧51c’J/ tri 、
漏水なし、リンプル長0.5 rrL、水圧1 、5
t19/ cm、泥水なし
くl))アte1〜フェノン吸収償
従来品の1/4
(C)内部半導電層のクランク
9日間乾燥後、ヒート1ナイクル(90℃×33時聞A
ン、5時間A)、2 OLI IQ] )後でもクラッ
クの発生はない。(a) Watertightness ripple length of conductor 5 In, water pressure 51 c'J/tri,
No leakage, rimple length 0.5 rrL, water pressure 1,5
t19/cm, without muddy water l)) Ate1 ~ Phenone absorption compensation 1/4 of conventional product (C) After drying the internal semiconducting layer crank for 9 days, heat 1 nicle (90℃ x 33 hours A)
No cracks were generated even after 5 hours A), 2 OLI IQ]).
なお、比較例として、ブチルゴムをベースどしたコンパ
ウンドの他の配合例を表2に示づ。As a comparative example, Table 2 shows other formulation examples of compounds based on butyl rubber.
第 2 表
上表に示されるにうに、比較例I J3よび2のコンパ
ウンドは本願発明で規定されるlIQ聞の体積抵抗率お
よびムーニー粘度を有しないものであり、これらの二1
ンパウンドを」ニ記実施例と同41;の方法′C素線間
に注入しくも導体の水蜜性は改善されず、アL?l・ノ
エノンの吸収ω心多く、内部半導電層に微小なりラック
が発生づるので好ましくない。As shown in the upper table of Table 2, the compounds of Comparative Examples I J3 and 2 do not have the volume resistivity and Mooney viscosity of IQ defined in the present invention, and these two
Even though the compound was injected between the strands of the conductor using method 41, which was the same as in Example 2, the water-resistance of the conductor was not improved. This is undesirable because the absorption of l-noenone is large and a small rack is generated in the internal semiconducting layer.
しかし、このJζうに、流動性の良好な上記水密性コン
パウンドを使用することにより、導体製造時に同一作業
工程内でフンパウンドを注入覆ることが可能となり、か
つ素線とコンバラン1〜の密着性が向−lニし、それに
よって電カケーブル導体の水密特性が向上覆る。また、
気体透過性の非常に低いブチルゴムをベースにすること
にJ、す、絶縁体の架橋剤分解残渣であるアセトフェノ
ンの吸収量が少なく、したがって内部半導電層のクラッ
ク発生を防止することができ、優れた水密型電力り一プ
ルを得ることができる。However, by using the above-mentioned watertight compound with good fluidity, it is possible to inject and cover the conductor in the same work process when manufacturing the conductor, and the adhesion between the wire and the combination 1~ is improved. This improves the watertight properties of the power cable conductor. Also,
Because it is based on butyl rubber, which has very low gas permeability, it absorbs only a small amount of acetophenone, which is a decomposition residue of the crosslinking agent of the insulator, and therefore can prevent the occurrence of cracks in the internal semiconducting layer, making it an excellent product. You can get one pull of watertight power.
加え−C1以上のようにして遂行される本発明製造方法
にJ:れば、冒頭C述べた素線に対する被覆E[程を省
略できるという人さな利点がある。In addition, the manufacturing method of the present invention carried out in the manner described above has the slight advantage that the step of covering the strands E described in the beginning C can be omitted.
第′1図は本発明水密型電ノック゛−プルの製造方法の
一実施例説明図、第2〜4図はそのA−A、B−13、
C−Ci’j1117iifiiiiT細図、第5図は
第’I 図IL d3+Jる第1の撚合装置の要部断面
詳細図で゛ある。
(1)〜(1111第1〜3の撚合装置、1.2:水密
コンパウンド搬送パイプ、3,4:水密コンパウンド押
出機、5:素線、(3:半尋電I11水密コJンパウン
ド、7:撚りタイフ、8:絞りタイフ、9.17.19
:撚線、10:ダイスホルダ、11:保温層、12:加
熱Irtヒータ線、13:ボヒン、i/I:グーシ、′
15:ガイ1−(」−ル、′16゜18:撚線層、20
:引取]」−ル。Figure '1 is an explanatory diagram of an embodiment of the method for manufacturing a watertight electric knock-pull according to the present invention, and Figures 2 to 4 are A-A, B-13,
C-Ci'j1117iifiiiT Detailed drawing, FIG. 5 is a detailed cross-sectional view of the main part of the first twisting device shown in FIG. (1) - (1111 1st - 3rd twisting device, 1.2: watertight compound conveying pipe, 3, 4: watertight compound extruder, 5: strands, (3: semi-thin electric I11 watertight compound J compound, 7: Twisted tie, 8: Squeezed tie, 9.17.19
: Twisted wire, 10: Dice holder, 11: Heat insulation layer, 12: Heating Irt heater wire, 13: Bohin, i/I: Gushi,'
15: Guy 1-(''-le, '16゜18: Twisted wire layer, 20
:Receipt]” - Le.
Claims (1)
るムーニー粘度15〜25を有する流動性の良好な半導
電性コンパウンドを撚線作業時に押出機を用いてコンパ
ウンド輸送パイプを介して撚りダイスに直接注入し、撚
線しながら素線間に注入し、絞りダイスで(J着充ll
11mを調整した後、圧縮′ ダイスを通過させること
から成る水密型電カケーブルの製造方法。[Claims] A semiconductive compound with good fluidity having a volume resistivity of 103 to 10 Ω-cm and a Mooney viscosity of 15 to 25, which is heated to 130°C, is produced using an extruder during the wire stranding process. The compound is directly injected into the twisting die via the compound transport pipe, injected between the strands while the wires are being twisted, and then with the drawing die (J filling
A method for manufacturing a watertight electric power cable, which comprises adjusting the length of 11 m and then passing it through a compression die.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15375583A JPS6047308A (en) | 1983-08-23 | 1983-08-23 | Method of producing watertight power cable |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15375583A JPS6047308A (en) | 1983-08-23 | 1983-08-23 | Method of producing watertight power cable |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6047308A true JPS6047308A (en) | 1985-03-14 |
JPS6325449B2 JPS6325449B2 (en) | 1988-05-25 |
Family
ID=15569412
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15375583A Granted JPS6047308A (en) | 1983-08-23 | 1983-08-23 | Method of producing watertight power cable |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6047308A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005085617A (en) * | 2003-09-09 | 2005-03-31 | Tatsuta Electric Wire & Cable Co Ltd | Watertight compression molding stranded conductor |
CN109702117A (en) * | 2018-12-25 | 2019-05-03 | 铜陵顶科镀锡铜线有限公司 | It is a kind of for regular twisted mistake proofing beggar's mother mould device |
-
1983
- 1983-08-23 JP JP15375583A patent/JPS6047308A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005085617A (en) * | 2003-09-09 | 2005-03-31 | Tatsuta Electric Wire & Cable Co Ltd | Watertight compression molding stranded conductor |
JP4485162B2 (en) * | 2003-09-09 | 2010-06-16 | タツタ電線株式会社 | Watertight compression molded twisted conductor |
CN109702117A (en) * | 2018-12-25 | 2019-05-03 | 铜陵顶科镀锡铜线有限公司 | It is a kind of for regular twisted mistake proofing beggar's mother mould device |
Also Published As
Publication number | Publication date |
---|---|
JPS6325449B2 (en) | 1988-05-25 |
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