JPS6046690B2 - Method for manufacturing polymer optical circuits - Google Patents

Method for manufacturing polymer optical circuits

Info

Publication number
JPS6046690B2
JPS6046690B2 JP52009762A JP976277A JPS6046690B2 JP S6046690 B2 JPS6046690 B2 JP S6046690B2 JP 52009762 A JP52009762 A JP 52009762A JP 976277 A JP976277 A JP 976277A JP S6046690 B2 JPS6046690 B2 JP S6046690B2
Authority
JP
Japan
Prior art keywords
light guide
forming
guide path
light
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52009762A
Other languages
Japanese (ja)
Other versions
JPS5395656A (en
Inventor
隆志 黒川
範夫 高戸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP52009762A priority Critical patent/JPS6046690B2/en
Publication of JPS5395656A publication Critical patent/JPS5395656A/en
Publication of JPS6046690B2 publication Critical patent/JPS6046690B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Optical Integrated Circuits (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Description

【発明の詳細な説明】 本発明は、受光、発光、変調等の機能を有する素子ある
いは電極等の少くともいずれかを導光路と一体化して形
成する高分子光回路の製造方法に関するものてある。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a polymer optical circuit in which at least one of elements or electrodes having functions such as light reception, light emission, and modulation is integrated with a light guide path. .

従来この種の導光路と機能素子あるいは電極との結合に
おいては、あらかじめ形成された導光路に素子あるいは
電極をとりつける方法と、電気光学効果や磁気光学効果
をもつ結晶を基板とし、これに導光路を形成して電極を
とりつける方法等がある。
Conventionally, in coupling this type of light guide with a functional element or electrode, there are two methods: attaching the element or electrode to a pre-formed light guide, and using a crystal with an electro-optic effect or magneto-optic effect as a substrate and attaching the light guide to this. There is a method of forming an electrode and attaching an electrode.

しかしながら前者においては、複数の光路がある場合、
それぞれの光路に対応させて素子あるいは電極をとりつ
けることは、正確な位置ぎめを要し、きわめて製造工程
が複雑となる欠点がある。また、後者においては、前述
したような結晶材料は一般に光の透過率が小さいため、
導光路を形成しても極めて4光損失が大きくなるという
欠点をもつ。本発明はこれらの欠点を除去するため、透
明性の良い高分子膜に、機能素子あるいは電極と導光路
を対応させて一体化して形成するもので、以下図面につ
いて詳細に本発明を説明する。
However, in the former case, if there are multiple optical paths,
Attaching elements or electrodes to correspond to each optical path requires accurate positioning, which has the drawback of making the manufacturing process extremely complicated. In addition, in the latter case, since crystalline materials such as those mentioned above generally have low light transmittance,
Even if a light guide path is formed, the disadvantage is that the four-light loss becomes extremely large. In order to eliminate these drawbacks, the present invention integrates a highly transparent polymer film with a functional element or an electrode and a light guide path in correspondence with each other.The present invention will be described in detail with reference to the drawings below.

J 第1図a−dは本発明の高分子光回路の製造方法の
一例を示す構成説明図である。
J FIGS. 1a to 1d are structural explanatory diagrams showing an example of the method for manufacturing a polymer optical circuit of the present invention.

まずナトリウムガラス等の基板3上に例えばスチレンの
ような重合性単量体を含浸したポリメチルメタクリレー
ト等の透明重合体膜1を形成し、さらに上に光分解性の
フォト・レジスト膜2を塗布形成し、導光路用パターン
・マスク4を重ねて露光し、前記単量体を光重合させる
。これにより、本出願人等が既に出願した特願昭48−
72442(特開昭50一22648)(昭和48年6
月27日出願)「光回路の製造方法」て述べているよう
に、高分子膜中に屈折率差を生じさせ、透明重合体膜1
中に導光路5を形成することができるが、同時に、導光
路5上のフォト・レジスト膜2も光分解し、溶剤によつ
て除去されて第1図bのような形となる。さらにこの上
から、例えばネサガラスのような透明電極6を蒸着し、
次いで前記透明電極6上に光の強度に応じて光導電性等
の性質の変化する物質、例えばポリビニルカルバゾール
を塗布して中間層7を形成し、更に前記中間層上に他の
電極8を蒸着する。
First, a transparent polymer film 1 such as polymethyl methacrylate impregnated with a polymerizable monomer such as styrene is formed on a substrate 3 such as sodium glass, and a photoresist film 2 that is photodegradable is further applied thereon. The monomer is photopolymerized by overlapping the light guide path pattern mask 4 and exposing it to light. As a result, the patent application filed in 1973 by the applicant, etc.
72442 (Unexamined Japanese Patent Publication No. 50-122648) (June 1972)
As described in "Method for Manufacturing Optical Circuits" (filed on May 27, 2013), a transparent polymer film 1 is produced by creating a refractive index difference in the polymer film.
A light guide path 5 can be formed therein, but at the same time, the photoresist film 2 on the light guide path 5 is also photodecomposed and removed by a solvent, resulting in a shape as shown in FIG. 1b. Furthermore, a transparent electrode 6 such as Nesa glass is deposited on top of this,
Next, a substance whose properties such as photoconductivity change depending on the intensity of light, such as polyvinylcarbazole, is coated on the transparent electrode 6 to form an intermediate layer 7, and another electrode 8 is further deposited on the intermediate layer. do.

このあと、溶剤によりフォトレジスト膜2を除去するこ
とにより、第1図dのように透明電極6、中間層7、他
の電極8を導光路5上に1対1に一体化して積層するこ
とができる。尚、この他にフォト・レジスト膜のマスク
により、導光路に光又は電場の強度に応じて変化する性
質例えは受光、発光、変調等の機能を有する物質を拡散
せしめるか、若しくは導光路の一部を溶剤て除去し、こ
の跡に前記光又は電場の強度に応じて変化する性質例え
ば受光、発光、変調等の機能を有する物質を埋設する方
法を用いることもできる。また、前述の例の場合とは逆
に露光部分の屈折率が低くなり、未露光部分が導光路と
なるよ.うな単量体と重合体膜の組合せの場合でも、光
重合、光架橋型のフォト・レジスト膜を用いることによ
り、同様な製造方法を適用することができる。実施例 塩化メチレン100m1にビスフェノールZから合成し
たポリカーボネート2y1メチルメタクリレート2CC
1光増感剤ベンゾインエチルエーテル20WL9を溶か
した溶液をガラス基板3上に流し、溶媒を蒸発させて厚
さ100μmの透明重合体膜1を形・成する。
Thereafter, by removing the photoresist film 2 with a solvent, the transparent electrode 6, intermediate layer 7, and other electrode 8 are integrated and laminated one-on-one on the light guide path 5 as shown in FIG. 1d. Can be done. In addition, a photoresist film mask can be used to diffuse a substance that has properties that change depending on the intensity of light or electric field, such as receiving, emitting, and modulating light into the light guide, or It is also possible to use a method in which a portion is removed with a solvent and a substance having properties that change depending on the intensity of the light or electric field, such as light reception, light emission, modulation, etc., is buried in the residue. Also, contrary to the previous example, the refractive index of the exposed portion becomes lower, and the unexposed portion becomes the light guide path. Even in the case of a combination of such a monomer and a polymer film, the same manufacturing method can be applied by using a photopolymerization or photocrosslinking type photoresist film. Example Polycarbonate 2y1 methyl methacrylate 2CC synthesized from bisphenol Z in 100ml of methylene chloride
1. A solution containing photosensitizer benzoin ethyl ether 20WL9 is poured onto a glass substrate 3, and the solvent is evaporated to form a transparent polymer film 1 with a thickness of 100 μm.

この後、アクリル酸系のフォト・レジスト膜2を塗布形
成したのち、導光路用パターン・マスク4を重ねて50
0W水銀灯を10分間照射した。このあと、水で現像処
理して、未露光部分のフォト・レジスト膜2を除去した
のち、光が半透するような銀の薄膜を蒸着して透明電極
6を形成した。さらに、この上に光導電性のポリビニル
カルバゾールを塗布して中間層7を形成し、さらに他の
電極8を蒸着した。゛このあと、0.05%水溶液・で
フォト・レジスト膜2を取り除き導光路5上に、透明電
極6、中間層7、他の電極8を1対1に一体化して積層
した受光素子を形成することができた。第2図はこのよ
うにして形成した本発明による光回路の一実施例の斜視
図である。透明電極6、他の電極8にリード線9が取り
付けられている。叙上のように本発明によれば、基板上
に重合性単量体を含む透明重合体膜とレジスト層を2層
に形成し、所望の導光路パターンを有するマスクを重ね
て紫外線または電子線を照射することにより高分子導光
路を形成すると同時に透明重合体膜の導光路が形成され
ていない部分の上には硬化レジスト膜を形成し、さらに
この上に透明電極と光導電性等の機能を持つ中間層及ひ
上部電極を形成して、前記の硬化したレジスト膜を除去
することによつて、高分子導光路と、中間層と、2つの
電極(透明電極と上部電極)とが一対一に対応した高分
子光回路をうることができるので、従来のように導光路
と中間層あるいは電極との位置合せを必要とせず、製造
が簡単てあるという効果を有するものである。
After that, an acrylic acid-based photoresist film 2 is applied and formed, and a pattern mask 4 for the light guide path is overlaid to form a 50-meter film.
It was irradiated with a 0W mercury lamp for 10 minutes. Thereafter, the unexposed portions of the photoresist film 2 were removed by developing with water, and then a thin silver film through which light was semitransparent was deposited to form a transparent electrode 6. Further, photoconductive polyvinylcarbazole was applied thereon to form an intermediate layer 7, and another electrode 8 was further deposited.゛After this, the photoresist film 2 is removed with a 0.05% aqueous solution, and a light receiving element is formed on the light guide path 5 by integrating the transparent electrode 6, the intermediate layer 7, and another electrode 8 in a one-to-one ratio. We were able to. FIG. 2 is a perspective view of an embodiment of the optical circuit according to the present invention formed in this manner. A lead wire 9 is attached to the transparent electrode 6 and the other electrode 8. As described above, according to the present invention, a transparent polymer film containing a polymerizable monomer and a resist layer are formed in two layers on a substrate, a mask having a desired light guide path pattern is overlaid, and ultraviolet rays or electron beams are applied. At the same time, a hardened resist film is formed on the part of the transparent polymer film where the light guide is not formed, and a transparent electrode and functions such as photoconductivity are formed on this. By forming an intermediate layer and an upper electrode having the same properties and removing the hardened resist film, a pair of polymer light guide, intermediate layer, and two electrodes (a transparent electrode and an upper electrode) are formed. Since it is possible to obtain a polymer optical circuit corresponding to one of the above, there is no need for alignment between the light guide path and the intermediate layer or electrode as in the conventional method, and the manufacturing process is simple.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図a−dは本発明の製造工程の一例を示す構成説明
図、第2図は本発明による光回路の一実施例の斜視図で
ある。 1・・・・・・透明重合体膜、2・・・・・フォト・レ
ジスト膜、3・・・・・・基板、4・・・・・・導光路
用パターン・マスク、5・・・・・・導光路、6・・・
・・・透明電極、,7・・・・・中間層、8・・・・・
・電極、9・・・・・・リード線。
1A to 1D are configuration explanatory diagrams showing an example of the manufacturing process of the present invention, and FIG. 2 is a perspective view of an embodiment of the optical circuit according to the present invention. DESCRIPTION OF SYMBOLS 1...Transparent polymer film, 2...Photoresist film, 3...Substrate, 4...Pattern mask for light guide path, 5... ...Light guide path, 6...
...Transparent electrode, 7...Intermediate layer, 8...
・Electrode, 9...Lead wire.

Claims (1)

【特許請求の範囲】[Claims] 1(イ)基板上に、重合性単量体を含浸した透明重合体
膜を形成する工程と、(ロ)前記の透明重合体膜上にレ
ジスト膜を形成し、ついで所望の導光路用のパターン・
マスクを重ねて露光し、前記の重合性単量体を光重合さ
せる工程と、(ハ)ついで前記のフォトレジストを溶解
除去して、導光路を形成する工程と、(ニ)ついで前記
の導光路及び残存したフォトレジスト上に透明電極を形
成する工程と、(ホ)前記の透明電極上に光または電場
の強さに応じて光導電性等の変化する中間層を形成する
工程と、(ヘ)前記の中間層上に上部電極を形成する工
程と、(ト)ついで前記のフォトレジストを除去する工
程とよりなることを特徴とする高分子光回路の製造方法
1 (a) Forming a transparent polymer film impregnated with a polymerizable monomer on the substrate; (b) Forming a resist film on the transparent polymer film, and then forming a resist film for a desired light guide path. pattern·
A step of photopolymerizing the polymerizable monomer by overlapping masks and exposing to light; (c) a step of dissolving and removing the photoresist to form a light guide path; and (d) a step of forming a light guide path. a step of forming a transparent electrode on the optical path and the remaining photoresist; (e) a step of forming an intermediate layer whose photoconductivity changes depending on the intensity of light or electric field on the transparent electrode; A method for manufacturing a polymer optical circuit, comprising the steps of (f) forming an upper electrode on the intermediate layer; (g) then removing the photoresist.
JP52009762A 1977-02-02 1977-02-02 Method for manufacturing polymer optical circuits Expired JPS6046690B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52009762A JPS6046690B2 (en) 1977-02-02 1977-02-02 Method for manufacturing polymer optical circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52009762A JPS6046690B2 (en) 1977-02-02 1977-02-02 Method for manufacturing polymer optical circuits

Publications (2)

Publication Number Publication Date
JPS5395656A JPS5395656A (en) 1978-08-22
JPS6046690B2 true JPS6046690B2 (en) 1985-10-17

Family

ID=11729278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52009762A Expired JPS6046690B2 (en) 1977-02-02 1977-02-02 Method for manufacturing polymer optical circuits

Country Status (1)

Country Link
JP (1) JPS6046690B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04257629A (en) * 1991-02-12 1992-09-11 Sharp Corp Electric carpet

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58116505A (en) * 1981-12-29 1983-07-11 Nippon Carbide Ind Co Ltd Light transmitting sheet

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04257629A (en) * 1991-02-12 1992-09-11 Sharp Corp Electric carpet

Also Published As

Publication number Publication date
JPS5395656A (en) 1978-08-22

Similar Documents

Publication Publication Date Title
US4211834A (en) Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask
RU2144689C1 (en) Mask (versions) and process of its manufacture (versions)
JP3290861B2 (en) Exposure mask and pattern forming method
JPS62189468A (en) Photomask
JPH06186412A (en) Formation of fine pattern
JPH05232684A (en) Manufacture of phase-shifted lithography mask
JPS5922050A (en) Photomask
US4368245A (en) Method for making matt diffusion patterns
JPS6046690B2 (en) Method for manufacturing polymer optical circuits
US4386143A (en) Multicolor optical filters and process for producing the same
JPH06148861A (en) Photomask and its production
CN107966876B (en) Photoetching plate, chip module and preparation method of photoetching plate
JPS62245251A (en) Resist pattern forming method
KR960002243B1 (en) Method for forming resist mask pattern by light exposure
JP3130335B2 (en) Method of forming resist pattern
JP2588192B2 (en) Pattern forming method
JP3091886B2 (en) Method of forming resist pattern
KR0128833B1 (en) Micro-patterning method of semiconductor device
JPH04247456A (en) Mask for exposure
JPH01277202A (en) Production of color filter with transparent electrode
JP3211555B2 (en) Method of forming color resin pattern
JPS58204532A (en) Formation of pattern
JPH0317621A (en) Production of multicolor display device
JPH04273243A (en) Phase shift mask and production thereof
JPH0590121A (en) Method of forming resist pattern