JPS6046077B2 - Method for manufacturing lithium tantalate single crystal wafer - Google Patents
Method for manufacturing lithium tantalate single crystal waferInfo
- Publication number
- JPS6046077B2 JPS6046077B2 JP57050481A JP5048182A JPS6046077B2 JP S6046077 B2 JPS6046077 B2 JP S6046077B2 JP 57050481 A JP57050481 A JP 57050481A JP 5048182 A JP5048182 A JP 5048182A JP S6046077 B2 JPS6046077 B2 JP S6046077B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- axis
- lithium tantalate
- crystal
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
本発明はタンタル酸リチウム単結晶の３６０±１０＊Ｙ
軸方向の面方位をもつウェーハ製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a 360±10*Y lithium tantalate single crystal.
This invention relates to a method for manufacturing wafers with axial surface orientation.
タンタル酸リチウム（Ｌ１ＴａＯ０）単結晶はＴＶ受信
機のＩＦフィルター等に用いられているほか、新用途と
して自動車電話用等の通信機用ＳＡＷ（表面弾性波）フ
ィルターやセンサーヘの応用も研究されている。Lithium tantalate (L1TaO0) single crystals are used in IF filters for TV receivers, etc., and new applications are also being researched for SAW (surface acoustic wave) filters and sensors for communication devices such as car phones. .
上記ＴＶ受信機用にはタンタル酸リチウム単結晶のうち
でもＸ軸引上げ単結晶から切り出されたＸ版ウェーハ〔
面方位〈ｎ゛０〉〕が使用される。これに対し自動車電
話用ＳＡＷフイルターヘの応用では、３６０±１００
Ｙ軸方向の面方位を持つウェーハが特性的に有望視され
ており、現在この面方位をもつタンタル酸リチウム単結
晶ウェーハの製造方法としては、例えば第１図に示した
ようにＸ軸引上け単結晶１を切り出し線２にしたがつて
縦に切り出すことによつて３６０±１０＊Ｙ軸方向の面
方位を持つウェーハを得る方法が試みられている。For the above TV receiver, an X version wafer cut from an X-axis pulled single crystal among lithium tantalate single crystals [
The plane orientation <n゛0>] is used. On the other hand, in the application to SAW filters for car phones, 360±100
Wafers with a plane orientation in the Y-axis direction are considered promising due to their properties, and the current method for manufacturing lithium tantalate single crystal wafers with this plane orientation is, for example, the X-axis pulling process as shown in Figure 1. A method has been attempted in which a wafer having a surface orientation of 360±10*Y-axis is obtained by vertically cutting a single crystal 1 along a cutting line 2.
しかし、この方法による場合、ウェーハの形状が角形と
なる。大きさが不揃いとなる、単結晶の利用効率（ウェ
ーハ切り出し、に当つての歩留り）が悪いという不利が
ある。他方また第２図に示したように、Ｙ軸
（〈川０〉）もしくはＺ軸（＜００１＞）引上げ単結晶
１’を切り出し線２にしたがつて斜めに切り出すことに
よつて第１図の場合と同様の面方位を持つウェーハを得
る方法も試みられているが、この場合にも単結晶の利用
効率が悪いほか、ウェーハの形状が楕円形のためデバイ
ス製造工程での取扱いが不都合であるという欠点がある
。However, in this method, the wafer has a rectangular shape. There are disadvantages in that the sizes are uneven and the utilization efficiency of the single crystal (wafer cutting yield) is poor. On the other hand, as shown in FIG. 2, the Y-axis (〈00〉) or Z-axis (〈001〉) pulled single crystal 1' is cut out diagonally along the cutting line 2 to produce the result shown in FIG. Although attempts have been made to obtain wafers with the same surface orientation as in the case of There is a drawback.
本発明はかかる不利欠点を解決したものであつて、これ
はｚ軸方向に向つてＹ軸より３６０±１０。The present invention solves this disadvantage, and the distance is 360±10 from the Y-axis toward the Z-axis direction.
Ｊの傾きの結晶工学的方位を有する種結晶を用いて３６
０±１０＊Ｙ軸方向にタンタル酸リチウム単結晶を成長
させる工程、得られた単結晶を単一分域化する工程、お
よびこの単結晶から３６０±１００ Ｙ軸方向の面方位
を持つ丸形ウェーハを引上げ軸にほぼ垂直に切り出す工
程からなることを特徴とするタンタル酸リチウム単結晶
ウェーハの製造方法に関するものである。この本発明方
法によれば、１丸形ウェーハを簡単に得ることができる
、２切り出しの際の面方位の検査・修正が容易である、
３結晶利用効率が格段に向上する、４一定形状の丸形ウ
ェーハの使用によるＳＡＷデバイス製造工程の効率化、
という利点がもたらされる。36 using a seed crystal with a crystallographic orientation with a slope of J
A step of growing a lithium tantalate single crystal in the 0±10*Y-axis direction, a step of dividing the obtained single crystal into a single domain, and a round shape with a plane orientation of 360±100 in the Y-axis direction from this single crystal. The present invention relates to a method for manufacturing a lithium tantalate single crystal wafer, which comprises a step of cutting the wafer substantially perpendicular to a pulling axis. According to the method of the present invention, it is possible to easily obtain one round wafer, and it is easy to inspect and correct the surface orientation when cutting out two wafers.
3. Dramatically improve crystal usage efficiency, 4. Improve efficiency of SAW device manufacturing process by using round wafers with a fixed shape.
This brings about the advantage of
特にこの３の利点は引上げ単結晶の径（ウェーハ径）が
大きくなるにつれて大きくなる。以下本発明の方法を詳
細に説明する。In particular, this advantage of 3 increases as the diameter of the pulled single crystal (wafer diameter) increases. The method of the present invention will be explained in detail below.
まず、あらかじめＺ軸方向に向つてＹ軸より３６０±１
０らの傾きの結晶工学的方位を有する種結晶を準備する
のであるが、これは例えば従来通りの方法でｘ軸方向引
上げあるいはＹ軸もしくはＺ軸方向引上げて作つたタン
タル酸リチウム単結晶を前記第１図もしくは第２図に示
す線２の切り出し面に垂直に切り出したもの、あるいは
また第３図に示す本発明の方法による引上げ単結晶から
引上げ軸方向に切り出された切片を使用することができ
る。First, in advance, move 360±1 from the Y axis toward the Z axis direction.
A seed crystal having a crystal engineering orientation with an inclination of It is possible to use a section cut perpendicular to the cutting plane along line 2 shown in FIG. 1 or 2, or a section cut out in the direction of the pulling axis from a single crystal pulled by the method of the present invention as shown in FIG. can.
この種結晶をイリジウムるつぼの中に形成されたタンタ
ル酸リチウム融液に浸し、３６成±１０軸方向の結晶工
学的方位に徐々に引上げることにより、目的の太さおよ
び長さに成長させる。This seed crystal is immersed in a lithium tantalate melt formed in an iridium crucible and gradually pulled up in the crystal engineering direction of the 36 x 10 axis to grow to the desired thickness and length.
該原料融液の加熱手段としては通常高周波誘導加熱装置
を使用すればよい。３６通±１０波Ｙ軸の範囲に引上げ
るとＬｉＴａＯ３単結晶の臂開面である（く０１２〉）
面が引上げ軸にほぼ垂直（３２・９面Ｙ軸の場合は．垂
直）に位置し、結晶自身の荷重か引張り応力として（〈
０１２〉）面に作用するため、（く０１２〉）面でのク
ラックが種および結晶中に発生し易い。As a heating means for the raw material melt, a high frequency induction heating device may normally be used. When pulled up to the range of 36 ± 10 waves on the Y axis, it is the open plane of the LiTaO3 single crystal (ku012〉)
The plane is located almost perpendicular to the pulling axis (perpendicular in the case of the 32.9 plane Y axis), and the load of the crystal itself or the tensile stress (〈
Since it acts on the (012>) plane, cracks on the (012>) plane are likely to occur in the seeds and crystals.
この（く０１２〉）面でのクラックを防止するには冷却
時の種および結晶の引上げ軸方向および径方向の温度．
差をできるだけ小さくすることが必要であり、冷却時に
種の上端が保温筒の外へ出ないように保温筒を従来より
高くし、種も保温筒の中に入つた状態にして冷却するこ
とが望ましい。また結晶成長操作中のふん囲気としては
不活性ガス中、空気・中、あるいは（不活性ガス＋酸素
）の混合ガス中等のいずれでもよいが、好ましくはクラ
ック防止のために不活性ガスと酸素との混合ガス中で成
長を行い、かつ冷却中も酸素を含むふん囲気に保つこと
が望ましい。つぎに、このようにして成長された結晶は
次工程で単一分域化される。In order to prevent cracks on this (012〉) plane, the temperature in the axial and radial directions of the pulling seeds and crystals during cooling should be adjusted.
It is necessary to make the difference as small as possible, and to prevent the upper end of the seeds from coming out of the insulating cylinder during cooling, the insulating cylinder should be made higher than before, and the seeds should also be cooled inside the insulating cylinder. desirable. The surrounding atmosphere during the crystal growth operation may be inert gas, air, or a mixed gas of (inert gas + oxygen), but it is preferable to mix inert gas and oxygen to prevent cracks. It is desirable to perform the growth in a mixed gas of 100% and maintain an oxygen-containing atmosphere during cooling. Next, the crystal grown in this way is made into a single domain in the next step.
この単一分域化の具体的方法は第４図、第５図に示すと
おりである。すなわち第４図のように、３６す±１０で
Ｙ軸方向成長単結晶１″の引上げ軸方向の上下に電極（
Ｐｔ電極）３をセットするか、あるいは第５図Ａおよび
Ｂのように、単結晶ビの側面に電極を結ふ線がＸ軸に垂
直になるように電極（Ｐｔ電極）をセットし、）直流電
圧を印加することにより容易に単一分域化が行われ、こ
の際の印加電圧は直径をＤＣｌｒｌ、長さ（上下問）を
１ａｎ、引上け軸方向をＹ軸からＺ軸へ向つてθ０とす
ると前者では５ｄ／ＣＯＳθ〜１■／ＣＯｓθ（ボルト
）が好ましく、後者では５１／・Ｓｉｎθ〜１０１／Ｓ
ｉｎθ（ボルト）が好ましい。本発明の場合この単一分
域化に当つて印加電界をＺ軸方向に加える必要がなく、
上記の手段によつて良好に単一分域化が行われる。なお
、この単一分域化の手段としては本発明者・らが先に提
案した方法すなわち断熱材からなる処理槽内に、一対の
電極板をその表面が互に平行となるように間隔をおいて
配設し、その電極板間のほぼ中央部に該単結晶１″を配
置し、該処理槽内に該単結晶と同種の粉末を密に充てん
し、電極板に直流電圧を印加するという方法も有利に採
用される。The specific method of this single division is as shown in FIGS. 4 and 5. That is, as shown in Fig. 4, electrodes (
(Pt electrode) 3, or set the electrode (Pt electrode) so that the line connecting the electrode to the side of the single crystal vinyl is perpendicular to the X axis, as shown in Figure 5 A and B. Single segmentation is easily performed by applying a DC voltage, and the applied voltage at this time is such that the diameter is DClrl, the length (up and down) is 1an, and the direction of the pulling axis is from the Y axis to the Z axis. and θ0, the former is preferably 5d/COSθ~1■/COsθ (volt), and the latter is 51/・Sinθ~101/S
inθ (volts) is preferred. In the case of the present invention, there is no need to apply an applied electric field in the Z-axis direction for this single domain division,
The above-mentioned method achieves good single segmentation. Note that the method for achieving this single area is the method previously proposed by the present inventors, namely, placing a pair of electrode plates in a treatment tank made of heat insulating material and spaced them so that their surfaces are parallel to each other. The single crystal 1'' is placed approximately in the center between the electrode plates, the treatment tank is densely filled with powder of the same type as the single crystal, and a DC voltage is applied to the electrode plates. This method can also be advantageously adopted.
上記のようにして単一分域化された単結晶をつぎに引上
げ軸にほぼ垂直に切り出し、これにより３６引±１００
Ｙ軸方向の面方位を持つ丸形ウェーハを得るのであるが
、この際基準面として（く０１２〉）面もしくは（〈０
１４〉）面を用い、これらの面をＸ線で方位出しした後
、ｘ軸を回転軸として所定角度回転させるとよい。The single crystal that has been single-domained as described above is then cut out almost perpendicularly to the pulling axis.
A round wafer with a plane orientation in the Y-axis direction is obtained, and at this time, the (ku012〉) plane or (〈0〉) plane is used as the reference plane.
14>) It is preferable to orient these planes using X-rays and then rotate them by a predetermined angle using the x-axis as the rotation axis.
なお、方位として３６と±１０ いるが、これらの方位と１８０ 然本発明の対象となる。In addition, the direction is 36 and ±10 However, these directions and 180 Naturally, it is a subject of the present invention.
以上説明したとおり、本発明の方法によると第３図に示
したように単結晶引上げ方向に対して垂直に切り出すだ
けで、目的とする３６に±１０垂Ｙ軸方向の面方位を持
つタンタル酸リチウム単結晶ウェーハが、特性上のバラ
ツキのない良質の製品として高歩留りで容易に得られる
。As explained above, according to the method of the present invention, as shown in FIG. Lithium single crystal wafers can be easily obtained at high yields as high-quality products with consistent characteristics.
このようにして得られるタンタル酸リチウム単結晶ウェ
ーハは、その面方位が３６リ±１００Ｙ軸方向であるた
め、表面弾性波の伝般減衰がほとんどゼロとなり、さら
に温度特性が小さいという特徴を有している。The lithium tantalate single-crystal wafer obtained in this way has a surface orientation of 36 ± 100 Y-axis directions, so it has the characteristics of almost zero propagation attenuation of surface acoustic waves and small temperature characteristics. ing.
つぎに具体的比較例、実施例をあげる。Next, specific comparative examples and examples will be given.
比較例
直径１００ＷＬ高さ１０『のイリジウムるつぼにタンタ
ル酸リチウム粉未焼成原料を３７００ｆ入れ、これを高
周波誘導加熱装置により溶融した。Comparative Example 3700 f of unfired lithium tantalate powder raw material was placed in an iridium crucible with a diameter of 100 W and a height of 10'', and was melted using a high-frequency induction heating device.
これにＹ軸のタンタル酸リチウム種結晶を浸し、径約５
３ｗ０ｎ長さ約１００ｍｍのタンタル酸リチウム単結晶
を（Ｎ２＋３．喀量％０２）ふん囲気中で引上げ、成長
終了後るつぼ保護のためにふん囲気をＮ２ｌＯＯ％にし
て冷却した後装置より取り出した。得られた単結晶を方
位切断し、単一分域化した後、径５０Ｔｆｒ！ｎ長さ１
００順の円柱状に加工した。この円柱状単結晶をｘ軸を
回転軸にしてＺ一軸方向に３６単回転した後、ウェーハ
を切り出すことにより厚さ０．５Ｗｒ！ｎの楕円形ウェ
ーハが４７枚得られた。Dip the lithium tantalate seed crystal on the Y axis into this, and
A 3w0n lithium tantalate single crystal with a length of about 100 mm was pulled up in an atmosphere of (N2 + 3.02% mass), and after the growth was completed, the atmosphere was changed to N2lOO% to protect the crucible, and the crystal was cooled and then taken out from the apparatus. The obtained single crystal was azimuthally cut to form a single domain, and the diameter was 50Tfr! n length 1
It was processed into a cylindrical shape in order of 00. After rotating this cylindrical single crystal 36 times in the Z-axis direction with the x-axis as the rotation axis, the wafer was cut out to a thickness of 0.5Wr! Forty-seven n oval wafers were obtained.
これを丸形になるように加工し、径５抽厚さ０．５？の
丸形ウェーハ（面方位３６径Ｙ軸）を同枚数得た。実施
例
比較例と同様のるつぼにタンタル酸リチウム粉未焼成原
料３７００ｙ入れ、同様に溶融した。Process this into a round shape, diameter 5, drawing thickness 0.5? The same number of round wafers (plane orientation 36 diameter Y axis) were obtained. 3700 y of lithium tantalate powder unfired raw material was placed in the same crucible as in Examples and Comparative Examples, and melted in the same manner.
これに３６成Ｙ軸方向の方位をもつタンタル酸リチウム
種結晶を浸し、径約５３７７ｍ長さ約１０ｈのタンタル
酸リチウム単結晶を比較例より５Ｃ１ｎ高くした保温筒
を用い、（Ｎ２＋３．０容量％０２）ふん囲気中で引上
げ、成長終了後種が保温筒の中に入つた位置で０２濃度
をそのままにして冷却した後装置より取り出した。得ら
れた単結晶をＸ軸を回転軸にし、（く０１２〉）面を基
準面にして（く０１２〉）軸からＹ軸に向い３．１）回
転させて方位切断した。ついで単一分域化した後、径５
０ｍ１ｎ長さ１０−の円柱状に加工した。この円柱状単
結晶を垂直に切り出すことにより径５０７７！７７！厚
さ０．５ｗｎの丸形ウェーハ（面方位３６りＹ軸）を８
激得た。A lithium tantalate seed crystal with a 36-dimensional Y-axis direction was immersed in this, and a heat insulating cylinder with a lithium tantalate single crystal with a diameter of about 5377 m and a length of about 10 hours was made 5C1n higher than the comparative example, and (N2 + 3.0% by volume) 02) The seeds were pulled up in an ambient atmosphere, and after growth was completed, the seeds were cooled while maintaining the 02 concentration in the heat insulating cylinder, and then taken out from the apparatus. The obtained single crystal was azimuthally cut by rotating with the X axis as the rotation axis and the (ku012〉) plane as the reference plane from the (ku012〉) axis toward the Y axis (3.1). Then, after dividing into a single region, the diameter 5
It was processed into a cylindrical shape with a length of 0 m1n and a length of 10 mm. By cutting this cylindrical single crystal vertically, the diameter is 5077!77! A round wafer (plane orientation 36, Y axis) with a thickness of 8
I got a lot of money.
第１図、第２図は従来のウェーハ切り出し説明図、第３
図は本発明のウェーハ切り出し説明図を示したものであ
り、また第４図、第５図は引上げ単結晶を単一分域化す
るための説明図を示したものである。
１，１″，１″・・・・・単結晶、２・・・・・・切り
出し線、３・・・・・・電極。Figures 1 and 2 are explanatory diagrams of conventional wafer cutting.
The figure shows an explanatory diagram of cutting out a wafer according to the present invention, and FIGS. 4 and 5 show explanatory diagrams for dividing a pulled single crystal into a single domain. 1, 1″, 1″...single crystal, 2...cutting line, 3...electrode.
Claims (1)
結晶工学的方位を有する種結晶を用いて３６゜±１０°
Ｙ軸方向にタンタル酸リチウム単結晶を成長させる工程
、得られた単結晶を単一分域化する工程、およびこの単
結晶から３６゜±１０゜Ｙ軸方向の面方位を持つ丸形ウ
ェーハを引上げ軸にほぼ垂直に切り出す工程からなるこ
とを特徴とするタンタル酸リチウム単結晶ウェーハの製
造方法。1 Using a seed crystal with a crystallographic orientation of 36° ± 10° from the Y-axis toward the Z-axis direction, 36° ± 10°
A step of growing a lithium tantalate single crystal in the Y-axis direction, a step of dividing the obtained single crystal into a single domain, and a round wafer having a plane orientation of 36° ± 10° in the Y-axis direction from this single crystal. A method for manufacturing a lithium tantalate single crystal wafer, comprising a step of cutting out substantially perpendicular to a pulling axis.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57050481A JPS6046077B2 (en) | 1982-03-29 | 1982-03-29 | Method for manufacturing lithium tantalate single crystal wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57050481A JPS6046077B2 (en) | 1982-03-29 | 1982-03-29 | Method for manufacturing lithium tantalate single crystal wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58167496A JPS58167496A (en) | 1983-10-03 |
| JPS6046077B2 true JPS6046077B2 (en) | 1985-10-14 |
Family
ID=12860097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57050481A Expired JPS6046077B2 (en) | 1982-03-29 | 1982-03-29 | Method for manufacturing lithium tantalate single crystal wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6046077B2 (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5050299A (en) * | 1973-09-03 | 1975-05-06 | ||
| JPS5127900A (en) * | 1974-08-15 | 1976-03-09 | Nippon Electric Co | NIOBUSANRICHIUMUTANKETSUSHONO IKUSEIHOHO |
| JPS5364700A (en) * | 1976-11-22 | 1978-06-09 | Toshiba Corp | Working method for single crystal |
| JPS5619048A (en) * | 1979-07-25 | 1981-02-23 | Konishiroku Photo Ind Co Ltd | Photographic image forming method |
| JPS5631911A (en) * | 1979-08-24 | 1981-03-31 | Hitachi Shipbuilding Eng Co | Bridge leg and construction thereof |
| JPS574112A (en) * | 1980-05-07 | 1982-01-09 | Siemens Ag | Method of producing laminated condenser |
| JPS5833310A (en) * | 1981-08-21 | 1983-02-26 | Hitachi Ltd | Surface acoustic wave device |
-
1982
- 1982-03-29 JP JP57050481A patent/JPS6046077B2/en not_active Expired
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5050299A (en) * | 1973-09-03 | 1975-05-06 | ||
| JPS5127900A (en) * | 1974-08-15 | 1976-03-09 | Nippon Electric Co | NIOBUSANRICHIUMUTANKETSUSHONO IKUSEIHOHO |
| JPS5364700A (en) * | 1976-11-22 | 1978-06-09 | Toshiba Corp | Working method for single crystal |
| JPS5619048A (en) * | 1979-07-25 | 1981-02-23 | Konishiroku Photo Ind Co Ltd | Photographic image forming method |
| JPS5631911A (en) * | 1979-08-24 | 1981-03-31 | Hitachi Shipbuilding Eng Co | Bridge leg and construction thereof |
| JPS574112A (en) * | 1980-05-07 | 1982-01-09 | Siemens Ag | Method of producing laminated condenser |
| JPS5833310A (en) * | 1981-08-21 | 1983-02-26 | Hitachi Ltd | Surface acoustic wave device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58167496A (en) | 1983-10-03 |
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