JPS6045012A - Short-time heat treatment device - Google Patents
Short-time heat treatment deviceInfo
- Publication number
- JPS6045012A JPS6045012A JP15376783A JP15376783A JPS6045012A JP S6045012 A JPS6045012 A JP S6045012A JP 15376783 A JP15376783 A JP 15376783A JP 15376783 A JP15376783 A JP 15376783A JP S6045012 A JPS6045012 A JP S6045012A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- heat treatment
- gas
- treated
- short
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
Abstract
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は、短時間熱処理装置に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a short-time heat treatment apparatus.
近年、半導体装置の製造に用いられるシリコン基板は大
口径になり、しかも、半導体素子の方は微細化されてい
る。このため、半導体装置の製造に使用される熱処理炉
中での工程である例えば、燐化ガラス等の溶融工程や気
相成長法で形成した８ｉ０．膜の緻密（デンシファイ）
化等のための熱処理工程を短時間熱処理法にて行うこと
が試みられている。これは、半導体素子が微細化される
に従って素子を構成する拡散層の深さが浅くなり、熱処
理温度、時間に制限が加えられたためである。而して、
このような短時間の熱処理を行う熱処理装置は、基板を
赤外線ランプやヒータで急速に加熱し、熱処理時間を１
０〜６０秒の範囲に短縮している。In recent years, silicon substrates used for manufacturing semiconductor devices have become larger in diameter, and semiconductor elements have also become smaller. For this reason, the 8i0. Membrane densification
Attempts have been made to carry out the heat treatment process for oxidation, etc. using a short-time heat treatment method. This is because as semiconductor elements become smaller, the depth of the diffusion layer constituting the element becomes shallower, and restrictions are placed on heat treatment temperature and time. Then,
Heat treatment equipment that performs such short-time heat treatment rapidly heats the substrate with an infrared lamp or heater, reducing the heat treatment time to 1.
The time has been shortened to a range of 0 to 60 seconds.
第１図は、従来の熱処理装置の概略構成を示す説明図で
ある。図中１は、基台２に対向して設けられたヒータで
ある。被処理体である基板３は、基台２の表面上に形成
された凸起部４に載置されるようになっている。これは
、基板３の裏面と基台２とが全面的に接触していると。FIG. 1 is an explanatory diagram showing a schematic configuration of a conventional heat treatment apparatus. Reference numeral 1 in the figure is a heater provided opposite to the base 2. A substrate 3, which is an object to be processed, is placed on a protrusion 4 formed on the surface of the base 2. This means that the back surface of the substrate 3 and the base 2 are in full contact with each other.
ヒータｌからの熱が基板３の裏面を通して基台２に逃げ
てしまい、効果内力加熱ができなくなるのを防止するた
めである。また、基台２側から基板３に向って汚染が起
きるのを防止するためである。This is to prevent the heat from the heater 1 from escaping to the base 2 through the back surface of the substrate 3, making it impossible to perform effective internal heating. This is also to prevent contamination from occurring from the base 2 side toward the substrate 3.
上述の如き熱処理装置１０では、加熱の際の基板３の温
度が凸起部３と接触している個所で低くなり、基板面内
の温度を均一に上昇させることができない。その結果、
基板３に均一な溶融処理や緻密処理を施すことができず
、熱歪が起きる問題があった。更に、基板３と基台２が
凸起部４を介して接触しているため、依然、基板３の汚
染を十分に防ぐことができなかった。In the heat treatment apparatus 10 as described above, the temperature of the substrate 3 during heating becomes low at the portions where it is in contact with the protrusions 3, making it impossible to uniformly increase the temperature within the surface of the substrate. the result,
There was a problem in that the substrate 3 could not be subjected to uniform melting processing or dense processing, and thermal distortion occurred. Furthermore, since the substrate 3 and the base 2 are in contact with each other via the protruding portion 4, contamination of the substrate 3 still cannot be sufficiently prevented.
本発明は、基板を均一に、かつ、効率よく加熱すると共
に、基板の汚染防止を達成した短時間熱処理装置を提供
することをその目的とするものである。An object of the present invention is to provide a short-time heat treatment apparatus that heats a substrate uniformly and efficiently and prevents contamination of the substrate.
本発明は被処理体である基板を浮遊した状態で加熱する
ようにして、基板を均一に、かつ。The present invention heats the substrate, which is an object to be processed, in a floating state, thereby uniformly heating the substrate.
効率よく加熱すると共に、基板の汚染防止を達成した短
時間熱処理装置を提供することをその目的とするもので
ある。The object of the present invention is to provide a short-time heat treatment apparatus that can efficiently heat the substrate and prevent contamination of the substrate.
以下１本発明の実施例について図面を参照して説明する
。An embodiment of the present invention will be described below with reference to the drawings.
第２図は１本発明の一実施例の概略構成を示す断面図で
ある。図中２０は、基台２１の被処理体載置領域２２に
対向して設けられた加熱器である。加熱器２０は、例え
ば面状ヒータで形成されている。加熱器２０と基台２ノ
の間には。FIG. 2 is a sectional view showing a schematic configuration of an embodiment of the present invention. In the figure, reference numeral 20 denotes a heater provided opposite to the object-to-be-processed mounting area 22 of the base 21 . The heater 20 is formed of, for example, a planar heater. Between the heater 20 and the base 2.
シャッター２３が設けられている。被処理体載置領域２
２は、加熱器２０に対向した基台２ノの一生面に形成し
た凹部の底面になっている。A shutter 23 is provided. Processed object placement area 2
2 is the bottom surface of a concave portion formed on the entire surface of the base 2 facing the heater 20.
被処理体載置領域２２の直下の水含２１の内部には、ガ
ス溜部２４が形成されている。ガス溜部２４は、ガス供
給通路２５を介して図示しないガス源に接続されている
。ガス溜部２４は。A gas reservoir 24 is formed inside the water container 21 directly below the object placement area 22 . The gas reservoir 24 is connected to a gas source (not shown) via a gas supply passage 25. The gas reservoir section 24 is.
一端が被処理体載置領域２２に開口した多数個のガス噴
出孔２６と連通している。ガス溜部２４は、ガス源から
供給されたガスをガス噴出孔２６から均一に噴出させる
だめのものである。One end communicates with a large number of gas ejection holes 26 that are open to the object mounting area 22 . The gas reservoir section 24 is for uniformly ejecting the gas supplied from the gas source from the gas ejection holes 26.
ガスとしては、Ａ ｒ 、 Ｈｅ等の不活性ガスを使用
するのが望ましい。また、被処理体載置領域２２を凹部
の底面としたのは、後述するように被処理体である基板
２１が、ガスによって浮遊した際に凹部の内壁面によっ
て、基板２２が基台２１から飛び出すのを防止するため
である。As the gas, it is desirable to use an inert gas such as Ar or He. Moreover, the reason why the object to be processed placement area 22 is the bottom surface of the recess is that when the object to be processed, the substrate 21, is suspended by the gas, the inner wall surface of the recess moves the substrate 22 away from the base 21, as will be described later. This is to prevent it from flying out.
このように構成された短時間熱処理装置−３０−によれ
ば、ガス噴出孔２６から噴出するガスによって浮遊した
状態で被処理体である基板２７を保持させる。次いで、
シャッター２３を開け、加熱器２０により急速に基板温
度を上昇させて。According to the short-time heat treatment apparatus -30- configured in this manner, the substrate 27, which is the object to be processed, is held in a suspended state by the gas ejected from the gas ejection holes 26. Then,
The shutter 23 is opened and the substrate temperature is rapidly raised using the heater 20.
短時間処理を行う。熱処理後、シャッター２３を閉じ、
ガスの供給を断って基板２７を被処理体載置領域２２に
載置し、基台２１から基板２７を取り出して加熱処理を
完了する。Performs short-time processing. After the heat treatment, close the shutter 23,
The gas supply is cut off, the substrate 27 is placed on the object-to-be-processed placement area 22, and the substrate 27 is taken out from the base 21 to complete the heat treatment.
このように基板２７は基台２１と離間して浮遊した状態
で加熱されるので、放熱を抑えて極めて効率よく短時間
に所定温度まで均一に加熱される。しかも、加熱処理中
は、基板２７がガスによって浮遊した状態になっている
ので、基板２１が汚染するのを阻止することができる。In this way, the substrate 27 is heated while floating apart from the base 21, so that heat radiation is suppressed and the substrate 27 is heated extremely efficiently and uniformly to a predetermined temperature in a short period of time. Moreover, since the substrate 27 is suspended by the gas during the heat treatment, contamination of the substrate 21 can be prevented.
以上説明した如く１本発明に係る短時間熱処理装置によ
れば、基板を均一に、かつ、効率よく加熱すると共に、
基板の汚染を防止できる等顕著な効果を奏するものであ
る。As explained above, according to the short-time heat treatment apparatus according to the present invention, a substrate can be heated uniformly and efficiently, and
This has remarkable effects such as being able to prevent contamination of the substrate.
第１図は、従来の熱処理装置の概略構成を示す断面図、
第２図は１本発明の一実施例の概略構成を示す１′￥１
ｊｌｌｉ′１図である。
２０・・・加熱器、２１・・・基台％２２・・・被処理
体載置領域、２３・・・シャッター、２４・・・ガス溜
部。
２５・・・ガス供給通路、２６・・・ガス噴出孔、２７
・・・基板、３０・・・短時間加熱処理装置。FIG. 1 is a sectional view showing the schematic configuration of a conventional heat treatment apparatus;
Figure 2 shows a schematic configuration of an embodiment of the present invention.
jlli′1 diagram. 20... Heater, 21... Base %22... Processed object mounting area, 23... Shutter, 24... Gas reservoir section. 25... Gas supply passage, 26... Gas ejection hole, 27
. . . Substrate, 30 . . . Short-time heat treatment device.
Claims (1)
と、該基台の一主面に設けられた被処理体載置領域と、
一端が該被処理体載置領域で開口し、かつ、他端が前記
ガス溜部に連通した多数個のガス噴出孔と、前記被処理
体載置領域に対向して設けられた加熱器とを具備するこ
とを特徴とする短時間熱処理装置。a base having a gas reservoir formed therein that communicates with a gas supply passage; a processing object mounting area provided on one main surface of the base;
a plurality of gas ejection holes, one end of which opens in the object-to-be-processed area and the other end communicates with the gas reservoir, and a heater provided opposite to the object-to-be-processed area. A short-time heat treatment apparatus characterized by comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15376783A JPS6045012A (en) | 1983-08-23 | 1983-08-23 | Short-time heat treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15376783A JPS6045012A (en) | 1983-08-23 | 1983-08-23 | Short-time heat treatment device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6045012A true JPS6045012A (en) | 1985-03-11 |
Family
ID=15569682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15376783A Pending JPS6045012A (en) | 1983-08-23 | 1983-08-23 | Short-time heat treatment device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6045012A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999041777A1 (en) * | 1998-02-13 | 1999-08-19 | Seiko Epson Corporation | Method of producing semiconductor device and heat treating apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57147237A (en) * | 1981-03-06 | 1982-09-11 | Sony Corp | Heat treatment device |
| JPS59215718A (en) * | 1983-05-23 | 1984-12-05 | Kokusai Electric Co Ltd | Infrared heat treatment apparatus for semiconductor wafer |
-
1983
- 1983-08-23 JP JP15376783A patent/JPS6045012A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57147237A (en) * | 1981-03-06 | 1982-09-11 | Sony Corp | Heat treatment device |
| JPS59215718A (en) * | 1983-05-23 | 1984-12-05 | Kokusai Electric Co Ltd | Infrared heat treatment apparatus for semiconductor wafer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999041777A1 (en) * | 1998-02-13 | 1999-08-19 | Seiko Epson Corporation | Method of producing semiconductor device and heat treating apparatus |
| US6187616B1 (en) | 1998-02-13 | 2001-02-13 | Seiko Epson Corporation | Method for fabricating semiconductor device and heat treatment apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5697427A (en) | Apparatus and method for cooling a substrate | |
| JPH0322691B2 (en) | ||
| TWI602231B (en) | A substrate processing apparatus, a deposit removal method for a substrate processing apparatus, and a storage medium | |
| JP2000334397A (en) | Method and apparatus for treating plate-shaped specimen with fluid | |
| US11139184B2 (en) | Method and apparatus for treating substrate | |
| JPS6045012A (en) | Short-time heat treatment device | |
| JPS6221229A (en) | Treating device | |
| JPS62123721A (en) | Treater | |
| JPH0420253B2 (en) | ||
| JPS61208218A (en) | Vertical type diffusion furnace | |
| JPS58182819A (en) | Heating base | |
| JPH10209252A (en) | Wafer tray | |
| JPH0737359B2 (en) | Vapor phase growth equipment | |
| JPH03184327A (en) | Vapor growth device | |
| JPS60171723A (en) | Manufacture of semiconductor device and apparatus therefor | |
| JPH06302575A (en) | Semiconductor chip cleaning method | |
| JP6697089B2 (en) | Substrate heat treatment equipment | |
| US3469308A (en) | Fabrication of semiconductive devices | |
| US4523067A (en) | Temperature gradient zone melting apparatus | |
| US4398974A (en) | Temperature gradient zone melting process employing a buffer layer | |
| JP2003347183A (en) | Substrate thermal treatment device | |
| JPH0534103Y2 (en) | ||
| JPH098049A (en) | Board heating device | |
| JP2004186533A (en) | Semiconductor manufacturing apparatus | |
| JPH03250751A (en) | Wafer expander |