JPS6042831A - Semiconductor manufacturing device - Google Patents
Semiconductor manufacturing deviceInfo
- Publication number
- JPS6042831A JPS6042831A JP15105683A JP15105683A JPS6042831A JP S6042831 A JPS6042831 A JP S6042831A JP 15105683 A JP15105683 A JP 15105683A JP 15105683 A JP15105683 A JP 15105683A JP S6042831 A JPS6042831 A JP S6042831A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- processing chamber
- inert gas
- chamber
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
〔発明の技術分野〕
本発明は半導体製造装置に関するもので、特に半導体基
板およびその酸化物、金）Ａ等のエツチング、あるいは
金属、酸化物等の半導体基板への堆積に使用されるもの
である。
〔発明の技術的背景および七〇）問題点〕添付図面の第
１゛図を参照して従来装置なａ明する。第１図は近年の
半導体製造工業にお℃・て使用１されているシリコン膜
、窒化シ１Ｊコン膜のエツチングのためのＣＩ）Ｅ （
Ｃｂｅｍｉｃａｌ Ｄｒｙ Ｂｔｃｈｉｎｇ ）装置の
構成図である。ガス管１を介してアブ１ノケータ２に供
給されたＣＦ４ ＋０２ガスもｔｊｊｌ波管３を通って
きたマイクロ波によりプラズマ化され、ガス管４を通っ
てマニホールド
室６に馬えら第１る。半導体処理室６ｏ）下部σ）ホル
ダー７ ＶＣは半導体基板８が載置されており、例えば
半導体基板８がシリコンの場合％ｉ下自己の反応式でエ
ツチングされる。
ＣＦ４ ＋ ０２ ＋ Ｓ ４ →Ｓ， Ｆ番 ＋ （
シ０２このときの反応生成物（ ＳＩＦ４ １ Ｃ０２
）４工、杉ト出管９およびパルプ１（）を介して真空
ボ／プ１１により矢印の如く外部に排出される。
ところが、上記の反応生成物の排出は必ずしも理想的に
行なわれるとは限らず、Ｓｉの微粒子が半導体処理室６
の壁面等に付着することが多い。
ｉのため、クリーンルームの特に半導体処理室にの近傍
が、これら微粒子によって汚染されやすい（半導体製造
装置の近傍の汚染は、離れたところの数十倍にも及ぶ）
。なぜなら、半導体処理室６ｑ）蓋１２を開けて半導体
基板８を取り出す際に、壁面に句着していた微粒子がク
リーンルーム内ニ飛敗するからである。
上記の如き微粒子の飛散によるクリーンルームの汚染は
ＣＤＢ装置に限らず、例えばアルミニウムやモリブデン
シリサイド等の堆積装置、ＲＩＥ（ Ｒｅａｃｆｉｕｅ
Ｉｏｎ Ｅｔｃｂｉｎｇ）装置等Ｖｃ オイテも見ら
れる。
このような微粒子の飛散によるクリーンルームの汚染は
、半導体処理室における半ｍ１体基版への微粒子の付着
とも相まって、エツチングの不均一、堆積膜の不均一等
をもたらし，製品の歩留りを低下させる賛因となってい
る。そして、この欠点な取り餘くために従来は、処理室
を定期的に拭（・たり、処理室をエツチングしたり（処
理室力１石英製のとぎはフッばと硝酸の根合液でエツチ
ング）しているが、いずれによっても十分で＆まなく，
また拭く回数なｊ・シ加させるとスルーフ゛ットカ１イ
氏下するといり欠点が新たに生じる。
〔発明の目的〕
本発明は上６１の問題点を克服するためになさｉｔだも
ので、半導体処理室に生じた微粒子を効率よく除去し、
微粒子の飛散によるり１ノーンルームの汚染を防止−ｒ
ると共に、製品ｔ／）歩留りを＋ｎ＋上させることので
きる半導体製造装置を提供することを目的とする。
〔発明の概振〕
一１ｈ己の目的を実現するため本発明レエ、半導体処理
室に不活性カスを導入するガス導入口とガス排出「１を
設け、不活性ガスを尋人することによって微粒子を片害
９；処理冨中に斜（・上らせて＝ガスＶＦ出［１から不
活性ガスと共に微粒子をｔＪＰ ＬＨイる半導状１１１
．’ｉ Ａ恥１−・程供するものである。°＊ｆ．：、
不活ａガスの導入、排出の際に、半導体基板を半導体処
理室から隔離するための予備室を設けた半導体製造装置
をも提供するものである。
〔発明の実施例〕
以下、添付図面の誌２図乃至繞４図を参１（工して本発
明のい（つ°かの実施例を説明する。第２図をｉ一実施
例の構成図で、第１図と同一要素は同一符号で示しであ
る。半導体処理室６内ＶＣ−＋Ｍ数σ）ガス導入口１３
を有するガス管１４を配設し、ノ（ルブ１５を介して不
活性ガス（例えばＮ２ ）を与えることカーできるよう
にする。まｔこ、排出管９の一端にノくパルプ１６を設
け、これを介して半導体処理室６内σ）ガスを外部に排
出できるようにする。
次に、第２図に示ｊ装置の動作を説すＪする。ドライエ
ツチングが終了したときには、マニホールド５からのガ
スの供給は停゛止し、半導体処理室６は真空に保たれ、
ノ（ルプ１０ 、 １５ 、 １６は共に閉になってい
る。そこで、パルプ１５を開にし、ガス導，入口１３か
らＮ２ガ“スな半導体処理室６に導入すると、壁面等に
付層していた微粒子が舞い上Ｆ）、半導体処理室内の気
圧が除々に上昇する。そして、半導体処理室６内の気Ｌ
Ｅがバルブ１６の外側の気圧よりも同くなった後にバル
ブ１６を開くと、舞い上っていた微粒子はＮ２ガスと共
に外部に排出される。
その後、バルブ１６を閉に[Technical Field of the Invention] The present invention relates to a semiconductor manufacturing device, and is particularly used for etching semiconductor substrates and their oxides, gold, etc., or for depositing metals, oxides, etc. on semiconductor substrates. . [Technical Background of the Invention and 70) Problems] A conventional apparatus will be explained with reference to FIG. 1 of the accompanying drawings. Figure 1 shows CI) E
1 is a configuration diagram of a chemical dry butching) device. The CF4+02 gas supplied to the ablation unit 1 nocator 2 through the gas pipe 1 is also turned into plasma by the microwaves passing through the tjjl wave tube 3, and passes through the gas pipe 4 into the manifold chamber 6. Semiconductor processing chamber 6o) Lower part σ) Holder 7 A semiconductor substrate 8 is placed on the VC. For example, if the semiconductor substrate 8 is silicon, it is etched using a self-reaction formula under %i. CF4 + 02 + S 4 →S, F number + (
SIF4 1 C02 Reaction product at this time (SIF4 1 C02
) 4, the pulp is discharged to the outside through the cedar outlet pipe 9 and the pulp 1 () by the vacuum pipe 11 as shown by the arrow. However, the discharge of the reaction products described above is not always carried out ideally, and Si fine particles may be discharged from the semiconductor processing chamber 6.
Often adheres to walls, etc. Because of this, the clean room, especially the area near the semiconductor processing room, is likely to be contaminated by these particles (contamination near the semiconductor manufacturing equipment is several dozen times greater than in areas far away).
. This is because, when the semiconductor processing chamber 6q) lid 12 is opened and the semiconductor substrate 8 is taken out, the particulates stuck to the wall surface are blown away into the clean room. Contamination of clean rooms due to the above-mentioned scattering of fine particles is not limited to CDB equipment, but also occurs in deposition equipment such as aluminum and molybdenum silicide, and RIE (Reacfiue).
Ion Etcbing) equipment, etc.Vc Oite can also be seen. Contamination of the clean room due to the scattering of such fine particles, combined with the adhesion of fine particles to the semi-millimeter substrate in the semiconductor processing room, causes non-uniform etching, non-uniform deposited films, etc., which reduces product yield. This is the cause. In order to overcome this drawback, conventional techniques have been to periodically wipe the processing chamber or to etch the processing chamber. ), but none of them are sufficient & not enough,
Furthermore, if the number of times of wiping is increased, the throughput will be reduced by 1 degree, and a new drawback will occur. [Object of the Invention] The present invention was made to overcome the above-mentioned 61 problems, and to efficiently remove fine particles generated in a semiconductor processing chamber,
Prevents contamination of 1-none room due to scattering of fine particles-r
It is an object of the present invention to provide a semiconductor manufacturing apparatus capable of increasing the product yield by +n+. [Summary of the Invention] In order to realize the object of the present invention, a gas inlet for introducing inert gas into a semiconductor processing chamber and a gas exhaust port are provided, and by discharging the inert gas, fine particles can be removed. Side damage 9; Inclined during processing (・rise = gas VF output [from 1 to tJP LH semiconducting particulates together with inert gas
．． 'i A shame 1-・It is something to offer. °*f. :,
The present invention also provides a semiconductor manufacturing apparatus provided with a preliminary chamber for isolating the semiconductor substrate from the semiconductor processing chamber when introducing and discharging inert a gas. [Embodiments of the Invention] Hereinafter, some embodiments of the present invention will be explained with reference to Figures 2 to 4 of the attached drawings. In the figure, the same elements as in FIG.
A gas pipe 14 having a gas discharge pipe 14 is provided so that an inert gas (for example, N2) can be supplied through a valve 15. A pulp 16 is provided at one end of the discharge pipe 9. Through this, the gas inside the semiconductor processing chamber 6 can be discharged to the outside. Next, the operation of the apparatus shown in FIG. 2 will be explained. When the dry etching is finished, the supply of gas from the manifold 5 is stopped, and the semiconductor processing chamber 6 is kept in a vacuum.
The pulp 15 is opened and introduced into the N2 gas semiconductor processing chamber 6 through the gas inlet 13. The fine particles fly up (F), and the air pressure inside the semiconductor processing chamber gradually increases.Then, the air L inside the semiconductor processing chamber 6
When the valve 16 is opened after E becomes equal to the atmospheric pressure outside the valve 16, the floating particles are discharged to the outside together with the N2 gas. Then close valve 16.
【２、バルブｌＯを開にして
真空ポンプ１１により半導体処理室６内に残ったＮ２カ
スおよび微粒子を外部に排出する。
次に、第３図を参照して第２図の実施例によるクリーン
ルームの汚染度を、第１図の従来装置によるクリーンル
ームの汚染度と比較して説明する。
第３図は、ＣＩ）Ｅ装置による繰り返しエツチング回数
とクリーンルームの微粒子数の関係を示すグラフである
。その際、ＣＩ＋１】は次のような茶汁で行った。すな
わち、１００市φのシリコンウェーハ上に形ｒｔされた
二献化シリコン膜上の厚さ５０００ Ａ の多結晶／リ
コン膜を、毎回１０枚づつエツチングする。
エツチングのに４ミの処理室内の気圧はＱ、４ ｔｏｒ
ｒ、ＣＦ４．ｏ２のガス流量は共に１２９ｃｃ／ｍｉｎ
、エツチング速度は２３００λ／ｍｉｎで、第２図の装
置における微粒子排出のための時間は１回あたり５分で
ある。また、クリーンルーム内の微粒子の測定は、７６
ｘ＋ｚφのシリフンウェーハをＣＩ） Ｅ ％ Ｉｌ：
＃、 カラ２ｍ離れたところにｉ４に置し、各最終エツ
チング回数から１時間内に付属゛シた微才」“１．子を
測定することによって行う。
このよ５にＬ、て微粒子数をｄＩＩｊ定した結果、第１
図に示′１″従来装置と第２図に示す木・発明の冥施回
の間には、第３図に示１−ような顕著なＡｅ違が見られ
た。すなわち、従来装置を用いろと微粒子数はゝゝד
印で示￥ｊ：うにエツチング回数の増加に伴って急、速
に増加１−ろ。これに対し、本発明の装置を用いるとイ
、改粒子パ孜は、′○”で示すようにゅるやかに増加す
るにとどまる。
なお、ガス導入口１３は互、いに異った方向を同くよう
にした力が、乱流を起こして微粒イを舞い士けるのに都
会がよい。また、ガス尋人口１３の方向を可動にしても
よい。
第４図は本発明の他の実施列の４〜成図で、第１図およ
び第２図と同−璧索ヲ了同−符号で示しである。予価室
１７はケートバルカ８を介して半導体処理室６と互いに
連通ずるように設けてあり、また半導体基板８を半導体
処理室６から予備室１７に搬送する搬送手段が設けられ
ている。なお、）・備室１７は真空ポンプ１９によって
バルブ２０を介して真空にされる。
次に、々ル４図に示′１′夾施゛例の動作を説明イる。
ドライエツチングが終了したときは、バルブ１０゜１５
、１６ 、２０およびゲートバルブ１８は全て閉にな
っており、ず導体処理室６」６よび予備室１７は真空に
保たれている。そこで、ゲートパルプ１８を開にして図
示しない搬送手段により半導体基板８な予備に？１７に
搬送する。次に、ゲートパルプ１８を閉にして、バルブ
１５を開に【７てＮ２ガスを半導体処理室６に導入する
。半導体処理室６の気圧がバルブ１６の夕１側の気圧よ
り置くなった時点でバルブ１６を開にし、Ｉ〜２ カス
と共に微粒子を排出する。
このように半導体処理室６から半導体基板８を隔離する
ための予（１ｍ１７を設けると、Ｎ２ガスによって微粒
子を舞い上げる際の半導体基板８への微粒子の付着を防
止できるので、製品の歩留りなより向上することかでき
る。
なお、アルミニウム、モリブデンシリサ・イドク、ｑの
堆積装置や、ＲＩＥ装置の如く外気と遮断された半導体
処理室を有する半導体製造装置Ｕこおいても、本発明を
適用できることはいうまでもない。
〔発明の効果〕
上記の如く本発明によれば、半導体処理室にカス尋人口
を設け、ここから不活性ガスを導入することによって壁
面婢に０旭している微粒子を舞い上け、ガス排出口から
不活性ガスと共に微粒子を排出できるようにしたので、
半導体処理室に生じた微粒子を効率よく除去し、クリー
ンルームの汚染を防止できるだけでな（、製品の歩留り
の向上をも笑現することができる。また、不活性ガスの
尋人・排出の際に、半導体基板を半導体処理室から隔離
１−る予備室を設けると、微粒子を半導体処理室から排
出する際の半導体基板への付着を防止でき、製品の歩留
りを史に向」ニさせることができる。[2. Open the valve lO and discharge the N2 residue and particles remaining in the semiconductor processing chamber 6 to the outside using the vacuum pump 11. Next, referring to FIG. 3, the degree of contamination of the clean room according to the embodiment shown in FIG. 2 will be explained in comparison with the degree of contamination of the clean room according to the conventional apparatus shown in FIG. FIG. 3 is a graph showing the relationship between the number of repeated etchings performed by the CI)E apparatus and the number of fine particles in the clean room. At that time, CI+1] was performed using the following tea juice. That is, each time, 10 polycrystalline/recon films having a thickness of 5000 A on a silicon dioxide film formed on a silicon wafer having a diameter of 100 mm are etched. The atmospheric pressure inside the processing chamber for etching is Q, 4 torr.
r, CF4. Both o2 gas flow rates are 129cc/min.
, the etching rate was 2300λ/min, and the time for ejecting fine particles in the apparatus of FIG. 2 was 5 minutes per time. In addition, the measurement of fine particles in the clean room is 76
x + zφ silicon wafer CI) E % Il:
This is done by placing the i4 at a distance of 2 m and measuring the attached microparticles within 1 hour after each final etching. As a result of determining dIIj, the first
There was a remarkable difference in Ae as shown in Figure 3 between the ``1'' conventional device shown in the figure and the inventive ritual cycle shown in Figure 2. In other words, when using the conventional device, The color and number of particles are ゝゝד
Indicated by the mark ￥￥: Increases rapidly as the number of times of sea urchin etching increases. On the other hand, when the device of the present invention is used, the particle modification rate only increases slowly as shown by '○'. A city is a good place for a similar force to cause turbulent flow and cause fine particles to fly around.In addition, the direction of the gas flow 13 may be made movable.Figure 4 shows another example of the present invention. The figures from 4 to 4 in the actual row are indicated by the same reference numerals as in FIGS. Further, a conveying means for conveying the semiconductor substrate 8 from the semiconductor processing chamber 6 to the preliminary chamber 17 is provided.The preliminary chamber 17 is evacuated by a vacuum pump 19 via a valve 20. Next, we will explain the operation of the '1' application example shown in Figure 4. When the dry etching is completed, the valve 10°15
, 16, 20 and the gate valve 18 are all closed, and the conductor processing chamber 6''6 and the preliminary chamber 17 are kept in vacuum. Then, the gate pulp 18 is opened and the semiconductor substrate 8 is transferred to a spare by a transport means (not shown). 17. Next, the gate pulp 18 is closed and the valve 15 is opened [7] to introduce N2 gas into the semiconductor processing chamber 6. When the atmospheric pressure in the semiconductor processing chamber 6 becomes lower than the atmospheric pressure on the side of the valve 16, the valve 16 is opened and the fine particles are discharged together with the dregs. By providing a preparatory space (1 m 17) to isolate the semiconductor substrate 8 from the semiconductor processing chamber 6 in this way, it is possible to prevent fine particles from adhering to the semiconductor substrate 8 when the fine particles are stirred up by the N2 gas, thereby improving the product yield. It should be noted that the present invention can also be applied to deposition equipment for aluminum, molybdenum silica, Idoku, and q, and semiconductor manufacturing equipment U that has a semiconductor processing chamber that is isolated from the outside air, such as an RIE equipment. Needless to say. [Effects of the Invention] As described above, according to the present invention, by providing a dust hole in the semiconductor processing chamber and introducing an inert gas from there, the fine particles that are lying on the wall surface can be dispersed. On top of that, we made it possible to exhaust particulates along with inert gas from the gas exhaust port.
Not only can it efficiently remove particulates generated in semiconductor processing rooms and prevent clean room contamination (it can also improve product yields). By providing a preliminary chamber that isolates the semiconductor substrate from the semiconductor processing chamber, it is possible to prevent fine particles from adhering to the semiconductor substrate when they are discharged from the semiconductor processing chamber, and to improve product yields. .
第１図は往来装置の一構成例の構成図、第２図は本発明
の一実施例の構成図、第３図は第１図および第２図に示
す装置によって繰り返し工、ツチングしたときのクリー
ンルームの微粒子数の変化を示″１〜グラフ、褐４図は
本発明の他の実施例の構成図である。
１．４．１４・・・ガス曾、２・・・アプリケータ、３
・・・尋波官、５・・マニホールド、６・・・半畳体処
理室、７・・・ホルダー、８・・・半導体基板、９・・
・排出管、１０ 、１５ 、１６ 、２０・・・パルプ
、１１ 、１９・・・Ｘ全ポンプ、１２・・・藝、１３
・・・ガス導入口、１７・・・予備室、１８・・・ゲー
トバルブ。
出願入代押入 猪 股 清FIG. 1 is a block diagram of an example of the structure of a moving device, FIG. 2 is a block diagram of an embodiment of the present invention, and FIG. 1 to graph showing changes in the number of particulates in a clean room, brown 4 diagram is a configuration diagram of another embodiment of the present invention. 1.4.14... gas generator, 2... applicator, 3
...Hyunpo Kan, 5...Manifold, 6...Semi-fold body processing chamber, 7...Holder, 8...Semiconductor substrate, 9...
・Discharge pipe, 10, 15, 16, 20...Pulp, 11, 19...X total pump, 12...Art, 13
...Gas inlet, 17...Preliminary chamber, 18...Gate valve. Application fee Kiyoshi Inomata
Claims (1)
等をエツチングし、あるいは金属、酸化物等を半導体基
板に堆積させるための半導体処理室と、 この半導体処理室に不活性ガスを導入する不活性ガス導
入手段と、 ｂ１１記不活住ガスの４人により前記半導体処理室内に
拡散された微粒子を、この不活性ガスと共に外＠ｖｃ
４Ｊｌ−出する微粒子排出手段とを備える半導体製造装
置。 ２不活性ガス導人手段（工、半導体処理室内で不を６性
ガスが＾１．流をおこすように互いに向きの異なった１
反数のガ・ス導入口を有する特許請求の範囲第１項記載
の半導体製造装置。 ３半導体基板およびこれに堆積された酸化物、金属等を
エツチングし、あるいは金属、酸化物等を半導体基板に
堆積させるための半導体処理室と、 この半導体処理室に不活性ガスを導入する不活性ガス導
入手段と、 前す己不活性ガスの尋人により前記半導体処理室内に拡
散された微粒子を、この不活性ガスと共に外部に排出す
る微粒子排出手段と、ゲートパルプを介して前記半導体
処理室に連通し、前記微粒子の拡散時に半導体基板を移
送させる予備室とを備える半導体製造装置。 ４不活性ガス導入手段は、半導体処理室内で不活性ガス
が乱流をおこすように互いに向きの異なった枚数のガス
尋入口を有する特許請求の範囲第３項記載の半導体製造
装置。[Claims] A 1,000-square-foot substrate, an oxide deposited thereon, and a gold kA
a semiconductor processing chamber for etching metals, oxides, etc., or depositing metals, oxides, etc. on a semiconductor substrate; an inert gas introducing means for introducing an inert gas into the semiconductor processing chamber; and 4 of b11 inert gas. The fine particles diffused into the semiconductor processing chamber by people are removed from the outside @vc along with this inert gas.
A semiconductor manufacturing apparatus comprising a particulate discharge means for emitting 4Jl. 2 Inert gas conductor means (1) in different directions so as to cause inert gas to flow in the semiconductor processing chamber.
The semiconductor manufacturing apparatus according to claim 1, having an inverse number of gas inlet ports. 3. A semiconductor processing chamber for etching the semiconductor substrate and oxides, metals, etc. deposited thereon, or for depositing metals, oxides, etc. on the semiconductor substrate, and an inert chamber for introducing an inert gas into the semiconductor processing chamber. a gas introducing means; a particulate discharge means for discharging the particulates diffused into the semiconductor processing chamber by the inert gas gas to the outside together with the inert gas; A semiconductor manufacturing apparatus comprising: a preliminary chamber in communication with which a semiconductor substrate is transferred during diffusion of the fine particles. 4. The semiconductor manufacturing apparatus according to claim 3, wherein the inert gas introducing means has a number of gas inlets oriented in different directions so as to cause a turbulent flow of the inert gas in the semiconductor processing chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15105683A JPS6042831A (en) | 1983-08-19 | 1983-08-19 | Semiconductor manufacturing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15105683A JPS6042831A (en) | 1983-08-19 | 1983-08-19 | Semiconductor manufacturing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6042831A true JPS6042831A (en) | 1985-03-07 |
Family
ID=15510329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15105683A Pending JPS6042831A (en) | 1983-08-19 | 1983-08-19 | Semiconductor manufacturing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6042831A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61196538A (en) * | 1985-02-27 | 1986-08-30 | Hitachi Ltd | Vacuum processing and apparatus thereof |
| JPS6411684A (en) * | 1987-07-06 | 1989-01-17 | Hitachi Ltd | Method and device for cleaning sample carrying-in chamber |
| JPH0250423A (en) * | 1988-08-12 | 1990-02-20 | Nec Kyushu Ltd | Semiconductor manufacturing apparatus |
| JPH03147317A (en) * | 1989-10-23 | 1991-06-24 | Internatl Business Mach Corp <Ibm> | Method for suppressing contamination in plasma treatment |
| JPH0684853A (en) * | 1992-06-16 | 1994-03-25 | Applied Materials Inc | Reduction of fine-particle contamination in semiconductor-device treatment |
| US5622595A (en) * | 1992-06-16 | 1997-04-22 | Applied Materials, Inc | Reducing particulate contamination during semiconductor device processing |
| US5902494A (en) * | 1996-02-09 | 1999-05-11 | Applied Materials, Inc. | Method and apparatus for reducing particle generation by limiting DC bias spike |
| US6139923A (en) * | 1996-02-09 | 2000-10-31 | Applied Materials, Inc. | Method and apparatus for reducing particle contamination in a substrate processing chamber |
| US6291028B1 (en) | 1996-02-09 | 2001-09-18 | Applied Materials, Inc. | Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface |
-
1983
- 1983-08-19 JP JP15105683A patent/JPS6042831A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61196538A (en) * | 1985-02-27 | 1986-08-30 | Hitachi Ltd | Vacuum processing and apparatus thereof |
| JPH0476492B2 (en) * | 1985-02-27 | 1992-12-03 | Hitachi Ltd | |
| JPS6411684A (en) * | 1987-07-06 | 1989-01-17 | Hitachi Ltd | Method and device for cleaning sample carrying-in chamber |
| JPH0250423A (en) * | 1988-08-12 | 1990-02-20 | Nec Kyushu Ltd | Semiconductor manufacturing apparatus |
| JPH03147317A (en) * | 1989-10-23 | 1991-06-24 | Internatl Business Mach Corp <Ibm> | Method for suppressing contamination in plasma treatment |
| JPH0684853A (en) * | 1992-06-16 | 1994-03-25 | Applied Materials Inc | Reduction of fine-particle contamination in semiconductor-device treatment |
| US5622595A (en) * | 1992-06-16 | 1997-04-22 | Applied Materials, Inc | Reducing particulate contamination during semiconductor device processing |
| US5902494A (en) * | 1996-02-09 | 1999-05-11 | Applied Materials, Inc. | Method and apparatus for reducing particle generation by limiting DC bias spike |
| US6139923A (en) * | 1996-02-09 | 2000-10-31 | Applied Materials, Inc. | Method and apparatus for reducing particle contamination in a substrate processing chamber |
| US6291028B1 (en) | 1996-02-09 | 2001-09-18 | Applied Materials, Inc. | Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface |
| US6289843B1 (en) | 1996-02-09 | 2001-09-18 | Applied Materials, Inc. | Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface |
| US6465043B1 (en) | 1996-02-09 | 2002-10-15 | Applied Materials, Inc. | Method and apparatus for reducing particle contamination in a substrate processing chamber |
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