JPS6041266A - Manufacture of photoelectric converter - Google Patents
Manufacture of photoelectric converterInfo
- Publication number
- JPS6041266A JPS6041266A JP58149082A JP14908283A JPS6041266A JP S6041266 A JPS6041266 A JP S6041266A JP 58149082 A JP58149082 A JP 58149082A JP 14908283 A JP14908283 A JP 14908283A JP S6041266 A JPS6041266 A JP S6041266A
- Authority
- JP
- Japan
- Prior art keywords
- forming
- conductive film
- groove
- semiconductor
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 16
- 150000002367 halogens Chemical class 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000006243 chemical reaction Methods 0.000 claims description 30
- 239000007789 gas Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 19
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 6
- 150000004820 halides Chemical class 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 239000003570 air Substances 0.000 claims 1
- 239000012159 carrier gas Substances 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910003437 indium oxide Inorganic materials 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical group 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 238000007664 blowing Methods 0.000 abstract description 4
- 238000003754 machining Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 29
- 239000000463 material Substances 0.000 description 9
- 238000003672 processing method Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 150000001805 chlorine compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- -1 (:F Chemical class 0.000 description 1
- 241000272201 Columbiformes Species 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- YUOWTJMRMWQJDA-UHFFFAOYSA-J tin(iv) fluoride Chemical compound [F-].[F-].[F-].[F-].[Sn+4] YUOWTJMRMWQJDA-UHFFFAOYSA-J 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
この発明はレーザビーム光を用いて光電変換装置を集積
化して作製する作製方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a manufacturing method for integrating and manufacturing photoelectric conversion devices using laser beam light.
この発明は、光電変換装置の作製に必要な薄膜の被加工
面に化学反応を伴ったレーザ加工により開溝を形成する
に際し、被加工面にハロゲン元素（２）
を含む気体を吹きつけせしめ、レーザ光によりハロゲン
元素を分解し、かつこの分解・活性化したハロゲン元素
とレーザ光照射により高温に昇温しで、形成される開溝
の溶融物または飛散物とを反応せしめ、飛散物が被加工
面である開溝の底面または周辺部に残存しないようにす
る本願出願人による特許願５８−０７２５５９ （昭和
５８年４月２５日出願）をさらに改良したレーザ加工方
法に関する。This invention involves blowing a gas containing a halogen element (2) onto the processed surface when forming grooves by laser processing accompanied by a chemical reaction on the processed surface of a thin film necessary for producing a photoelectric conversion device. The halogen element is decomposed by laser light, and the decomposed and activated halogen element is heated to a high temperature by laser light irradiation, causing a reaction between the molten material or scattered matter in the open grooves formed, and the scattered matter is covered. The present invention relates to a laser processing method that is a further improvement of Patent Application No. 58-072559 (filed on April 25, 1982) by the applicant of the present invention, in which the laser does not remain on the bottom surface or peripheral portion of the open groove, which is the processing surface.
この発明はハロゲン元素を含む気体の化学的活性化を促
すため、噴射ノズルの端部に近づけた一対の電極を設け
、放電を行わしめ、プラズマ分解を同時に行い、イオン
化を助長してレーザ光が照射された部分での昇温領域に
おける化学反応即ちレーザ・ケミカル反応（ＬＣ５とも
いう）を実施したことを特徴とする。In order to promote the chemical activation of the gas containing the halogen element, this invention provides a pair of electrodes close to the end of the injection nozzle, generates a discharge, simultaneously performs plasma decomposition, promotes ionization, and generates laser light. It is characterized in that a chemical reaction, that is, a laser chemical reaction (also referred to as LC5) is carried out in a temperature-rising region of the irradiated portion.
この発明は、薄膜型半導体装置特に絶縁表面を有する基
板上に第１の導電性被膜よりなる第１の電極、非単結晶
半導体被膜、さらにこの上面に第２の導電性被膜よりな
る第２の電極を積層して形成する光電変換装置のそれぞ
れの薄膜のＬＣ５によ（３）
る加工処理に関するものである。The present invention provides a thin film semiconductor device, in particular, a substrate having an insulating surface, a first electrode made of a first conductive film, a non-single crystal semiconductor film, and a second conductive film formed on the upper surface of the first electrode. The present invention relates to processing by LC5 (3) of each thin film of a photoelectric conversion device formed by laminating electrodes.
ハロゲン元素は被加工物のハロゲン化物が気体となるよ
うに選択されている。即ち例えば珪素においては弗素ス
ズ、アルミニューム等の導体に関しては塩化物が一般に
選ばれた。The halogen element is selected so that the halide of the workpiece becomes a gas. Thus, for conductors such as silicon, tin fluoride, and aluminum, chlorides were generally chosen.
第１の導電性被膜を塩化物雰囲気にし、第１のＬＣ５加
工により、端部（エッヂ）の鋭い（シャープな）開溝を
有した所定の形状に第１の開溝を形成してパターニング
をし、さらにこの上面に半導体被膜を形成して、この第
１の開溝を基準としてそれと従属の形状の弗化物または
弗化物に酸素を１〜１０％混合した雰囲気にてＬＣＳを
行い、シャープ・エッヂを有する第２の開溝を半導体に
設けたものである。The first conductive film is placed in a chloride atmosphere, and patterning is performed by forming a first groove in a predetermined shape with a sharp groove at the edge by first LC5 processing. Then, a semiconductor film is formed on this upper surface, and LCS is performed using the first groove as a reference in a fluoride in a shape subordinate to it or in an atmosphere containing 1 to 10% oxygen mixed with fluoride. A second groove having an edge is provided in the semiconductor.
さらにこの第２の開溝を形成した後、第２の導電性被膜
を形成し、第１または第２の開溝を基準としてこの第２
の導電性被膜と従属関係のパターンを有して塩化物気体
雰囲気でＬＣ５を行い、第３の開溝を形成せんとするも
のである。Furthermore, after forming this second open groove, a second conductive film is formed, and this second open groove is formed using the first or second open groove as a reference.
The third open groove is formed by performing LC5 in a chloride gas atmosphere with a conductive film having a pattern of subordination.
本発明はこれらのハロゲン元素を含む気体を１（４）
〜５０ｍ／秒で直径５０〜Ｍｏμφ例えば１００μφの
微細穴より被加工面に吹きつけて、被加工面でのパリの
発生を防ぐことを目的としている。さらに前記した薄膜
半導体装置において、ＬＣ５による開溝部での電気的絶
縁、連結を設計仕様に基づいて行うに際し、その領域で
の低級絶縁酸化物（半導電性をも有する）が残存しない
ように化学反応を併用して行うことを特徴としている。The present invention sprays a gas containing these halogen elements onto the workpiece surface at a speed of 1 (4) ~50m/sec through a fine hole with a diameter of 50~Moμφ, for example, 100μφ, to prevent the occurrence of paris on the workpiece surface. The purpose is Furthermore, in the above-mentioned thin film semiconductor device, when performing electrical insulation and connection in the groove portion by LC5 based on design specifications, it is necessary to ensure that low grade insulating oxide (which also has semiconductivity) does not remain in that region. It is characterized by being carried out in combination with chemical reactions.
従来、レーザ加工方式においては、１つの開溝またはパ
ターンを被加工面に大気中で施すことが行われていた。Conventionally, in a laser processing method, a single groove or pattern is formed on a surface to be processed in the atmosphere.
しかしかかる大気中では、開溝部の被加工物の一部また
はその低級酸化物が開溝底部に残存したり、また周辺部
にパリとして飛着してしまい、シャープ・エッヂを有す
る開溝を作ることができなかった。However, in such an atmosphere, a part of the workpiece in the open groove or its lower grade oxides may remain at the bottom of the open groove or fly to the periphery as debris, resulting in an open groove with sharp edges. I couldn't make it.
さらにこの単なる熱のみのレーザ・スクライブ（以下Ｌ
Ｓという）は、レーザ光が照射された部分を超高温に加
熱して気化・除去するのみであった。Furthermore, this laser scribe (hereinafter referred to as L) that uses only heat
S) was only vaporized and removed by heating the part irradiated with the laser beam to an extremely high temperature.
加えて従来はこの大気が室温であるため、気化して飛散
する際、急冷されるため、開溝の底部ま（５）
たは凹部に飛散できなかった一部が残存してしまい、さ
らに上面にはパリといわれる凸部が第４図（Ａ）に示す
ごとく大きく存在してしまう傾向が強かった。In addition, in the past, this atmosphere was at room temperature, so when it vaporized and dispersed, it was rapidly cooled, resulting in a portion of the air that could not be dispersed remaining at the bottom of the open groove (5) or in the recess, and even the upper surface. There was a strong tendency for large convex portions called "paris" to exist as shown in FIG. 4(A).
そのため、電気的に開溝によりそれぞれの領域を分離せ
んとする時、この残存物によりリーク電流が発生してし
まい、光電変換装置等の半導体装置への応用が不可能で
あった。Therefore, when attempting to electrically separate each region by opening grooves, leakage current is generated due to this residual material, making it impossible to apply it to semiconductor devices such as photoelectric conversion devices.
さらに製造歩留りが究めてばらつき、工業的な応用が不
可能であった。Furthermore, the manufacturing yield was highly variable, making industrial application impossible.
他方、ＬＳを硝酸または塩酸系の化学液体に浸された被
加工面に行うことが考えられる。On the other hand, it is conceivable to perform LS on a workpiece surface immersed in a nitric acid or hydrochloric acid-based chemical liquid.
しかしかかる液体を用いる方法においては、このＬＳの
完了した後、被加工面の化学液体を十分洗浄しなければ
ならず、多量生産には実用性がまったくなかった。However, in the method using such a liquid, the chemical liquid on the surface to be processed must be thoroughly cleaned after the LS is completed, and it is not practical at all for mass production.
本発明は、かかる従来の方法の欠点を除去し、工業的に
多量生産が可能な完全ドライ方法であって、さらにＬＣ
３の後、この開溝部でシャープ・エッヂを有せしめると
いう大きな特長を有する。さく６）
らに加えて本発明は、絶縁物上の導体に対し、ＬＣＳを
した場合、この開溝により分割されたそれぞれが電気的
に残存物によりリークすることがなくなり、きわめて工
業的に優れたものであった。The present invention eliminates the drawbacks of the conventional methods and provides a completely dry method that can be industrially mass-produced.
3, it has a great feature of having a sharp edge at this open groove. 6) In addition, in the present invention, when LCS is applied to a conductor on an insulating material, electrical leakage due to residual materials will not occur in each of the sections divided by the open grooves, which is extremely industrially superior. It was something like that.
以下に図面に従って本発明の詳細な説明する。The present invention will be described in detail below with reference to the drawings.
第１図は本発明のレーザ加工処理方式によるブロック図
であり、また第２図はそのノズル部を拡大して示してい
る。FIG. 1 is a block diagram of the laser processing method of the present invention, and FIG. 2 is an enlarged view of the nozzle portion thereof.
これら図面において、レーザ加工機（５０）はレーザ発
振機（２１）、制御系（５１）、ＸＹテーブル（５２）
等よりなっている。レーザ発振機（２１）は１．０６μ
のＹＡＧレーザ（周波数１〜３０ＫＨｚ、ビーム径１０
〜８０μφ例えば５０μφ、出力０．１〜８Ｗ例えばＩ
Ｗ）を用いた。レーザ光はコリオメータ（２２〉を経て
、）＼−フミラー（選択反射金属Ｘ２３）より吹きつけ
ノズル（３０〉、集光レンズ（３５）を経て基板（１）
上の被加工面（５）に至る。In these drawings, the laser processing machine (50) includes a laser oscillator (21), a control system (51), and an XY table (52).
etc. Laser oscillator (21) is 1.06μ
YAG laser (frequency 1~30KHz, beam diameter 10
~80μφ e.g. 50μφ, output 0.1~8W e.g. I
W) was used. The laser beam passes through a coriometer (22), a spray nozzle (30) from a fumirror (selective reflection metal
This leads to the upper surface to be processed (5).
他方、光学的位置検出系（５１）はランプ（２４）より
ハーフミラ−（２５）を経て被加工面（５）に至り、反
射光がミラー（２５）を通過して検知器（７）
（２６）に至る。この検知器（２６）では被加工面での
開溝（１８）の位置情報を検出し、コンピュータ（２７
）に入力される。On the other hand, the optical position detection system (51) reaches the workpiece surface (5) from the lamp (24) through the half mirror (25), and the reflected light passes through the mirror (25) and is detected by the detector (7) (26 ). This detector (26) detects the position information of the open groove (18) on the workpiece surface, and the computer (27)
) is entered.
このコンピュータ（２７）にはメモリ （２８）にて第
２の開溝（１９）の相対的な位置をプログラムされてい
るため、これと第１の加工部の開溝（１８）の位置とを
重合わせて第２の開溝（１９）の位置、パターンをレー
ザ加工機（５０）の発振機（２１）に入力させる。同様
に、位置をＸＹテーブル（５２）の制御系（２９）に入
力させる。かくして、このＸＹテーブル（５５）のシフ
トを完了した後、このレーザ発振機（２１）は第１の開
溝（１８）より所定の距離ずれた（移動させて）位置（
座標）に第２の開溝（１９）を形成せしめることが可能
となる。This computer (27) has the memory (28) programmed with the relative position of the second opening groove (19), so this and the position of the opening groove (18) of the first processing section are programmed. The position and pattern of the second open groove (19) are superimposed and input to the oscillator (21) of the laser processing machine (50). Similarly, the position is input to the control system (29) of the XY table (52). Thus, after completing the shift of this XY table (55), this laser oscillator (21) is shifted (moved) from the first groove (18) by a predetermined distance (
It becomes possible to form the second open groove (19) at the coordinates).
またＸＹテーブル（５２）上方（一般には被加工面と吹
きつけ口との距離は０．５〜２ｍｍ離した）にハロゲン
元素気体の吹きつけ用ノズル（３０）がそのプラズマ発
生用電極（３１）、（３２）を有して配設されている。Further, above the XY table (52) (generally, the distance between the workpiece surface and the blowing port is 0.5 to 2 mm), a halogen element gas blowing nozzle (30) is connected to the plasma generating electrode (31). , (32).
被加工面を有する基板をＸ方向またはＹ方向の所定の位
置にテーブル（５２）を制御系（２９）（８）
の指示に従って移動させた。The table (52) was moved to a predetermined position in the X or Y direction to place the substrate having the surface to be processed according to instructions from the control system (29) (8).
ハロゲン元素を有する気体は（３８）より導入させ、ノ
ズル（３０）の端部（直径５０〜２００μφ例えば１０
０μφ＞＜３７）より被加工面（５）上に１〜５ｍ／秒
の速度にて噴出させる。この端部での速度はく３６）で
の圧力が１〜５Ｋｇ／ｃｉであり、被加工面が大気圧で
あるため１〜５ｍ／秒の速度を有している。レーザ光は
ノズル（３０）の上面の投光性保護物（ここでは石英を
用いた）、集光レンズ（３５）。The gas containing the halogen element is introduced from (38), and the end of the nozzle (30) (diameter: 50 to 200 μΦ, for example, 10
0μφ><37) onto the workpiece surface (5) at a speed of 1 to 5 m/sec. The pressure at the speed foil 36) at this end is 1 to 5 Kg/ci, and since the surface to be processed is at atmospheric pressure, the speed is 1 to 5 m/sec. The laser beam is transmitted through a light-emitting protector (here, quartz is used) on the upper surface of the nozzle (30) and a condensing lens (35).
端部（３７）を経て被加工面に照射させている。The surface to be processed is irradiated through the end portion (37).
気体のプラズマ化はＤＣ〜高周波例えば３０ＫＨｚの周
波数に１〜５ＫＶの電圧を電極（３９）より一対の電極
（３０，（３２）に加え、端部（３７）で放電をさせた
。The gas was turned into plasma by applying a voltage of 1 to 5 KV at a frequency of DC to high frequency, for example, 30 KHz, from an electrode (39) to a pair of electrodes (30, (32)) to cause discharge at the end (37).
この気体のプラズマ化は反応性気体が単にハロゲン元素
の水素化物でない、いわゆる炭素化物例えばＣＦ、Ｂ
ｒ ＋ ＣＩ（Ｆ３等の化学的に安定な気体の分解に有
効である。これらの絶縁物を反応性気体とする場合は、
ＣＩ、Ｆのラジカルを発生させるため、プラズマ反応を
同時に行うことは有効であった。This gas is converted into plasma when the reactive gas is not simply a hydride of a halogen element, but a so-called carbonide such as CF, B, etc.
r + CI (effective for decomposing chemically stable gases such as F3. When these insulators are used as reactive gases,
It was effective to perform plasma reactions simultaneously in order to generate CI and F radicals.
（９）
ノズル全体はセラミックスよりなる電極間の放電により
熔けないようにした。ノズル（３０）については第２図
に特に拡大して示している。(9) The entire nozzle was prevented from melting due to electric discharge between ceramic electrodes. The nozzle (30) is shown particularly enlarged in FIG.
即ち、弗化物気体として弗化水素、 ＣＦ） Ｂｒ、
ＣＩＩＦＪ ｒＣ棒、ＣＣＩＬＦＬの気体を用いた。さ
らに珪素のＬＣ５用またはこれに加えて酸素を１〜１０
％混入せしめ、レーザ光によりｃＦｖＪ＜活性弗化物に
変成し、被加工面と反応した際、炭素が酸化して炭酸ガ
スとなり、固体炭素が被加工面に残存しないようにする
ことは好ましかった。That is, as a fluoride gas, hydrogen fluoride, CF) Br,
CIIFJ rC rod and CCILFL gas were used. Furthermore, for silicon LC5 or in addition to this, oxygen is added to 1 to 10
It is preferable to mix % of cFvJ<active fluoride with laser light, and when it reacts with the workpiece surface, carbon oxidizes to carbon dioxide gas and solid carbon does not remain on the workpiece surface. Ta.
塩化物気体を用いる場合は、ＩＩｃＩまたはＣＣＩ、を
主として用いた。When using chloride gas, IIcI or CCI was mainly used.
弗素化物、塩化物を使い分け、被加工面の成分の反応生
成物が反応抜気体となるものを用いた。Fluoride and chloride were used, and the reaction product of the components on the surface to be processed was used as a reaction gas.
本発明の一例を示すと、以下の通りである。An example of the present invention is as follows.
１） Ｓｔ ＋ ４１１Ｆ −９５ｉＦや ＋ ２１１
□２ ） ５ｉＯＬ＋ ４１１Ｆ → ＳｉＦ４ ＋
２＋ＩｔＯ３”）、２ＡＩ ＋ ６ＨＣＩ → ２八Ｉ
Ｃ＋、＋ ３１１１４）Ａ鳩＋ ６ＨＣ１→２＾ＩＣＩ
Ｊ ＋ ３Ｈ，０５） Ｗ ＋ ６１１Ｆ −＋ ＷＦ
ｒ ＋ ３ＨＬ（１０）
８）ＳｎＯＬ＋ ４ＨＣ１→ Ｓｒ＋ＣＩ４ ＋ ２Ｈ
ＬＯ上記例においては、ハロゲン化物気体として弗化珪
素または珪化物を用いたが、これらは前記したごとく、
他の弗化物、他の塩化物例えば（：Ｆ、 、 ＣＨＦ、
、 Ｃ町ＣＩ、 、 ＣＣＩ、 、 ＣＨ工Ｃ１□で
あってもよい。1) St + 411F -95iF or + 211
□2) 5iOL+ 411F → SiF4 +
2+ItO3”), 2AI + 6HCI → 28I
C+, + 31114) A pigeon + 6HC1→2^ICI
J + 3H, 05) W + 611F −+ WF
r + 3HL (10) 8) SnOL+ 4HC1→ Sr+CI4 + 2H
LO In the above example, silicon fluoride or silicide was used as the halide gas, but as described above, these
Other fluorides, other chlorides such as (:F, CHF,
, C town CI, , CCI, , CH engineering C1□.
このレーザ加工方法において、第１の開溝をたえず検知
することができるため、この第１の開溝（１８）の位置
を検知しつつ第２の開溝（１９）の作製を実施すること
が可能となった。In this laser processing method, since the first open groove can be constantly detected, the second open groove (19) can be fabricated while detecting the position of the first open groove (18). It has become possible.
第３図は本発明方式を用いた光電変換装置の縦断面図を
示す。FIG. 3 shows a longitudinal sectional view of a photoelectric conversion device using the method of the present invention.
図面に従ってさらに本発明の内容を示す。The content of the present invention will be further illustrated according to the drawings.
第３図において、（Ａ）は例えば２０ｃｍ Ｘ ６０ｃ
ｍの大きさの絶縁表面を有する基板（１）である。ここ
ではガラス基板を用いた。In Figure 3, (A) is, for example, 20cm x 60cm
A substrate (1) having an insulating surface of size m. A glass substrate was used here.
さらにこの上面に被加工面（５）が形成されている。Furthermore, a processed surface (5) is formed on this upper surface.
この加工面（５）にはレーザ加工により開溝群（１１） （１５）が設けられている。This machined surface (5) has a groove group (11) formed by laser processing. (15) is provided.
この第２図（Ａ）の一部を拡大し、その縦断面図を第２
図（Ｂ）に示す。A part of this Figure 2 (A) is enlarged and its longitudinal cross-sectional view is shown in the second figure.
Shown in Figure (B).
図面において、基板（１）は２ｍｌ１１厚のガラス表面
である。さらにこの上面に、第１の導電性膜（２）をｒ
Ｔｏ （酸化インジューム・スズ＞（５００〜１５００
人）とＳｎＯ＊ （２００〜４００ 人）の２層Ｎ突ま
たは弗素のごときハロゲン元素が添加された酸化スズ（
５００〜２０００人）を透光導電膜として設けた。In the drawing, the substrate (1) is a 2 ml 11 thick glass surface. Furthermore, a first conductive film (2) is placed on this top surface.
To (indium tin oxide>(500~1500
SnO* (200 to 400 people) or two layers of tin oxide (200 to 400 people) to which a halogen element such as fluorine is added
500 to 2000 people) was provided as a light-transmitting conductive film.
これに対し、第１の開溝り１Ｂ）を１．Ｃ３（周波数５
ＫＨｚ、スキャンスピード１ｍ／分、出力０．６Ｗ、焦
点距離５０１．ビーム径４０μφ、雰囲気１１ＣＩ十八
１ｒ（ＩＩｃｌ ５〜３０％に希釈〕、ノズル入り口側
圧力１．５〜５Ｋｇ／ｃＪ例えば２Ｋｇ ／ ｃＪ ＋
室温）により形成し、第１の導電膜を複数のパターン（
ここでは第２図（Ａ）に示すごとき短冊状）に電気的に
分割した。On the other hand, the first open groove 1B) is 1. C3 (frequency 5
KHz, scan speed 1m/min, output 0.6W, focal length 501. Beam diameter 40 μφ, atmosphere 11 CI 181 r (IIcl diluted to 5-30%), nozzle inlet pressure 1.5-5 Kg/cJ, e.g. 2 Kg/cJ +
room temperature), and the first conductive film is formed by forming a plurality of patterns (
Here, it was electrically divided into strips (as shown in FIG. 2(A)).
このＬＣ５により、開溝によって切断された２つ（１２
）
１０＝Ａ ７ｃｍ以下のリークしか観察できず、不良が
Ｏ／３０であった。This LC5 allows two (12
) 10=A Only a leak of 7 cm or less was observed, and the failure was O/30.
しかし従来の単なる大気中のＬＳでは、１０゛５〜１Ｏ
−１Ａ ／ ｃｍのリークが３０サンプル中６ケも観察
され、開溝部での残存物によるリーク電流の防止に対し
本発明はきわめて有効であった。However, in the conventional LS in the atmosphere, 10゛5~1O
Leakage of −1 A/cm was observed in 6 out of 30 samples, indicating that the present invention was extremely effective in preventing leakage current due to residue in the open grooves.
さらにこの第１の開溝を形成した後、この上面に非単結
晶半導体をＰＩＮ接合を少なくとも１つＣＰＩＮ接合、
ＰＩＮＰＩＮ・・・ＰＩＮ接合）有して積層した。Furthermore, after forming this first trench, at least one PIN junction is formed on the upper surface of the non-single crystal semiconductor, a CPIN junction,
PIN PIN...PIN junction).
図面では、Ｐ型５ｔｘＣ＋Ｊｘ ＝０．８ 〉（２Ｘ約
１００人）−■型Ｓｉ （約０．５ ｐ ＞＜ ３ ）
−Ｎ型５ｉｘＣ＋＜ （ｘ ＝０．９ ）（約１００
人）（４）よりなる１つのＰＩＮ接合を有する半導体（
３）をプラズマＣＶＤ法、フォトＣＶＤ法またはフォト
プラズマＣＶＤ法により形成して、被加工面（５）が形
成された。In the drawing, P type 5txC + Jx = 0.8 > (2X about 100 people) - ■ type Si (about 0.5 p >< 3)
-N type 5ixC+< (x = 0.9) (approximately 100
(4) A semiconductor having one PIN junction consisting of (4)
3) by a plasma CVD method, a photo CVD method, or a photo plasma CVD method to form a processed surface (5).
この後、この半導体（３）を第１の開溝（１８）を基準
として１０〜２００μ例えば７０μ、図面において左側
にシフトさせて、第２の開溝（１９）を形成した。シフ
ト量は予め第１図におけるメモリ（２８）（１３）
にプログラムさせておいた。Thereafter, the semiconductor (3) was shifted to the left in the drawing by 10 to 200 microns, for example, 70 microns, with respect to the first trench (18), to form a second trench (19). The shift amount was programmed in advance in memories (28) and (13) in FIG.
第１図は第２の開溝を形成している途中を示している。FIG. 1 shows the process of forming the second open groove.
図面ではこの第２の開溝は半導体（３）または半導体お
よびその下の第１の導電膜〈２）をもレーザスクライブ
をして除去させた。In the drawing, the semiconductor (3) or the semiconductor and the underlying first conductive film (2) were also removed by laser scribing in the second groove.
この第２の開溝（１９）の作製において、気体としてＣ
Ｆ） ＢｒまたはＣＨＦ、を用いた。その他は第１の開
溝の作製と同−ＬＣＳプロセス条件とした。するとこの
開溝の周辺部に珪素の飛散物が残存せず、第２の電極間
の導電膜を作る際、ピンホールの原因となる要素を除去
することができた。さらに第１の導電物の側面〈１７）
に低級酸化珪素が残存することがなく好ましいものであ
った。In the production of this second open groove (19), C is used as a gas.
F) Br or CHF was used. The other conditions were the same as those for producing the first open groove. As a result, no scattered silicon particles remained around the open groove, and it was possible to remove elements that would cause pinholes when forming the conductive film between the second electrodes. Furthermore, the side surface of the first conductor <17)
This was preferable since no lower silicon oxide remained in the oxide.
第３図（Ｂ）においては、この半導体等の上表面全面に
第２の導電膜を形成させた。ここではＩＴＯを５０〜１
５００人例えば１０５０人の厚さに、さらにその上面に
反射性金属を３００〜５０００人例えば１０００人の厚
さにアルミニュームを真空蒸着法またはＣＶＤ法により
形成させた。In FIG. 3(B), a second conductive film was formed on the entire upper surface of this semiconductor. Here, ITO is 50 to 1
A reflective metal layer is formed on the top surface of aluminum to a thickness of 300 to 5,000 layers, for example, 1,000 layers, by vacuum evaporation or CVD.
（１４）
かくすることにより、第１の導電膜（８）と第２の導電
膜（１１）とを連結体（１９）によりサイドコンタクト
（１７）をさせた。このコンタクト部はＩＴＯ，酸化ス
ズといった酸化物であって、かつ導体の材料どうしで連
結せしめ、このコンタクト部での酸化物絶縁物の発生に
よる信頼性低下を防いだ。(14) In this way, the first conductive film (8) and the second conductive film (11) were brought into side contact (17) through the connector (19). This contact portion is made of an oxide such as ITO or tin oxide, and the conductor materials are connected to each other to prevent a decrease in reliability due to the generation of oxide insulators in this contact portion.
次ぎにこの第２の導電膜に対し、第１の開溝を基準とし
てさらに２０〜２００μ例えば７０μ左側（第１の素子
側）にシフトして第３の開溝（２０）を塩化物の気体を
用い、第１図に示したレーザ加工装置により形成させた
。この第３の開溝（２０）は、第２の導電膜（４）のみ
またはこの導電膜に加えてその下の半導体（３）をもそ
の一部に除去させた。そしてこの第３の開溝（２０）で
の底部（９）は半導体（３）の上面のＮ型半導体（１４
）を除去させ、導電膜（１１）、＜ １１’）での電気
的分離を完全に実施した。Next, the second conductive film is shifted further to the left (first element side) by 20 to 200μ, for example, 70μ, with the first groove as a reference, and a third groove (20) is formed using chloride gas. was formed using the laser processing apparatus shown in FIG. This third trench (20) allows only the second conductive film (4) or, in addition to this conductive film, to partially remove the underlying semiconductor (3). The bottom (9) of this third groove (20) is the N-type semiconductor (14) on the upper surface of the semiconductor (3).
) was removed, and electrical isolation by the conductive film (11), <11') was completely implemented.
（１５）
〜１ｖの電位差が生ずるため、残存物が存在するとこの
残存物が気体であるためリークの要因となって、信頼性
の低下を促してしまう。このためかかる残存物を本発明
のＬＣ５による化学反応を伴わせて十分除去することは
きわめて有効である。(15) Since a potential difference of ~1 V is generated, if a residual substance exists, this residual substance is a gas, which causes leakage, and promotes a decrease in reliability. Therefore, it is extremely effective to sufficiently remove such residues by the chemical reaction using LC5 of the present invention.
その結果、不良は０／３０とまったく観察されなかった
。従来のＬＳのみでは３０ケ中２ケ切断できないものが
観察されたことを考えると、きわめて大きな効果である
といえる。As a result, no defects were observed at 0/30. Considering that it was observed that 2 out of 30 items could not be cut using conventional LS alone, this can be said to be an extremely large effect.
ＣＣＶ＋＋窒素（０〜９０％）の雰囲気で行ってもよい
。It may be carried out in an atmosphere of CCV++ nitrogen (0-90%).
図面において、かくしてガラス基板（１）上に複数の第
１＃よび第２の光電変換素子（６＞、（７）が形成され
、さらにそれらは、開溝（１Ｂ＞、＜１９＞、＜２０）
よりなる連結部（５）において電気的に直列に連結させ
ることが可能となった。In the drawing, a plurality of first # and second photoelectric conversion elements (6>, (7)) are thus formed on the glass substrate (1), and they are further formed in the open grooves (1B>, <19>, <20). )
It became possible to electrically connect them in series at the connecting portion (5) consisting of the following.
このような大面積に設けられた異なる材料を、それぞれ
の材料を前の材料と特定の関係（ここでは直列構造）を
有して形成させる時、本発明のレーザ・ケミカル・スク
ライブ方法（ＬＣ５”）はその製造歩留りの向上、さら
に集積化したパネルの効（１６）
率の向上にきわめて有効であることが判明した。When forming different materials over such a large area, each material having a specific relationship with the previous material (in this case, a series structure), the laser chemical scribing method (LC5" ) has been found to be extremely effective in improving the manufacturing yield and the efficiency (16) of integrated panels.
第３図はこれらの上面をパッシベイション膜として窒化
珪素膜（４０）を０．１ μの厚さに形成させた。In FIG. 3, a silicon nitride film (40) with a thickness of 0.1 μm was formed on the upper surfaces of these as a passivation film.
第４図は第３の開溝（２０）を形成するに際し、従来よ
り知られるごとく、垂直方向にレーザ光を照射した場合
の第４図（Ａ）と、本発明方法のＬＣ３によりレーザ光
を照射した場合の第４図（Ｂ）との縦断面図である。When forming the third open groove (20), FIG. 4(A) shows the case where the laser beam is irradiated in the vertical direction, as is conventionally known, and FIG. It is a longitudinal cross-sectional view with FIG. 4(B) in the case of irradiation.
第４図（Ａ）において、第３の開溝（１０）はその底部
（９）が第１の導電膜に至りやすく、さらにその作業を
１００回行っても、６０％以上が（１０）に示すごとく
、第１の導電膜をも切断してしまうため、光電変換装置
としての直列接続をさせることが実質的に不可能であっ
た。In FIG. 4(A), the bottom (9) of the third open groove (10) easily reaches the first conductive film, and even if this operation is repeated 100 times, more than 60% of the groove (10) will reach the first conductive film. As shown, since the first conductive film was also cut, it was virtually impossible to connect them in series as a photoelectric conversion device.
さらに、残存物（低級導電性酸化物）の大部分（１７）
が示すごとく、１μの膜厚に対し２〜５μもの高さで薄
膜（４）の表面上に突出してしまい、この凸部でのパッ
シベイションを不十分にするに加え、第３の開溝での電
気的アイソレイションも（１７）
不十分（ＩＫΩ／ｃｍ以下）になりやすかった。Furthermore, most of the residual material (lower conductive oxide) (17)
As shown in Figure 2, the protrusion on the surface of the thin film (4) is as high as 2 to 5μ for a film thickness of 1μ, and in addition to making the passivation at this protrusion insufficient, the third groove Electrical isolation at (17) was also likely to be insufficient (below IKΩ/cm).
しかし、本発明方法では第４図（Ｂ）に示すごとく、第
１図の部分においては第３の開溝（２０）の底部（９）
が半導体（３）の一部のみをえぐるため、残存物（３３
）も従来方法に比べ１／１０以下となり、被加工物の下
側の損傷をきわめて少なくし、実用上歩留りは９０％を
越えた優れたものであった。この時、開溝（２０）にて
切断された２つの導電膜（４）間は電気的に４にΩ／Ｃ
ｌ１１以上を有し、その製品としての歩留りも８５％以
上を２０ｃｍ Ｘ ６０ｃｍのパネルにて４０段直列連
結の装置で得ることができた。However, in the method of the present invention, as shown in FIG. 4(B), in the portion of FIG. 1, the bottom (9) of the third open groove (20)
Since the semiconductor (3) is only partially scooped out, the remaining material (33
) was less than 1/10 compared to the conventional method, and damage to the lower side of the workpiece was extremely reduced, and the yield was excellent in practice, exceeding 90%. At this time, the electrical resistance between the two conductive films (4) cut by the open groove (20) is 4Ω/C.
11 or higher, and the product yield was 85% or higher using an apparatus in which 40 stages of 20 cm x 60 cm panels were connected in series.
本発明において、第３図の光電変換装置において、２０
ｃｍ Ｘ ６０ｃｍの基板の大きさに対し、１つの素子
（３１）、（３２）を１５ｍｍ Ｘ ２０ｃｍとし、そ
れらを同一基板上に４０段直列接続をさせる場合、ＡＭ
Ｉ （１００ｍＷ／、Ｊ）の条件下にて開放電圧２６ｖ
、短絡電流２６０ ｍＡを有することができ、変換効率
６．７％を有することが可能となった。In the present invention, in the photoelectric conversion device shown in FIG.
cm x 60 cm, one element (31) and (32) are 15 mm x 20 cm, and when they are connected in series in 40 stages on the same board, AM
Open circuit voltage 26v under the condition of I (100mW/, J)
, a short circuit current of 260 mA, and a conversion efficiency of 6.7%.
以上の実施例においては、第１、第２、第３の（１８） 開溝のすべてをＬＣＳにて作製した場合を示した。In the above embodiment, the first, second, and third (18) The case where all the open grooves were made by LCS is shown.
しかし当然のことながら、これらの一部をＬＣＳとし、
他を従来より公知のマスク法、スクリーン印刷法により
作製してもよいことはいうまでもない。However, as a matter of course, some of these are considered LCS,
It goes without saying that other materials may be produced by conventionally known mask methods and screen printing methods.
本発明の実施例において、レーザ光として１．０６μの
波長のＹＡＧ レーザを用いた。しかし４８８ｎｍ、
５１２ｎｍのアルゴン・レーザ、また１０．６μの炭酸
ガス・レーザその他の光源をパルス光として、またはＣ
Ｗ（連続発振光）として用いることは同様に可能である
。In the embodiment of the present invention, a YAG laser with a wavelength of 1.06 μm was used as the laser beam. However, 488nm,
512nm argon laser, 10.6μ carbon dioxide laser or other light source as pulsed light, or C
It is also possible to use it as W (continuous wave light).
本発明方法において、絶縁表面を有する基板として、ス
テンレスまたはアルミニュームのごとき金属を用い、そ
の表面に０．１〜１０μの厚さの耐熱性絶縁物を形成し
て用いてもよい。かかる基板の上面に、第１の導電膜、
半導体、第２の導電膜を積層し、光は第２の導電膜を通
って加えられる。In the method of the present invention, a metal such as stainless steel or aluminum may be used as the substrate having an insulating surface, and a heat-resistant insulator having a thickness of 0.1 to 10 μm may be formed on the surface. A first conductive film is formed on the upper surface of the substrate,
A semiconductor and a second conductive film are stacked, and light is applied through the second conductive film.
さらにこの光電変換装置の集積化構造を有せしめるに際
し、本発明方式ではコンピュータにより制御された完全
無人化製造ラインを作ることが可能となり、きわめて工
業的に価値大なるものであ（１９）
ることが判明した。Furthermore, in providing an integrated structure for this photoelectric conversion device, the method of the present invention makes it possible to create a completely unmanned production line controlled by a computer, which is of great industrial value (19). There was found.
さらにこのＬＣＳを行う反応室での反応の前工程、後工
程に予備室を設け、第１の予備室より反応室に被加工面
を有する基板を移動し、ＬＣＳを行う。Furthermore, preliminary chambers are provided in the pre-process and post-process of the reaction in the reaction chamber in which this LCS is performed, and the substrate having the surface to be processed is moved from the first preliminary chamber to the reaction chamber, and LCS is performed.
さらにこの反応室の反応性気体を排気して別容器に保管
し、基板を第２の予備室に移す。さらにこの空になった
反応室に第１の予備室より他の基板を移す。この後別容
器より反応性気体を導入する。Further, the reactive gas in this reaction chamber is evacuated and stored in a separate container, and the substrate is transferred to a second preliminary chamber. Furthermore, another substrate is transferred from the first preliminary chamber to this empty reaction chamber. After this, a reactive gas is introduced from a separate container.
以上のプロセスを繰り返すことにより、連続的にＬＣＳ
を行うことが可能になった。液体を用いたＬＣＳは本発
明と同様に飛散物の除去が可能となるが、洗浄工程等を
必要とし、気体を用いた本発明のＬＣ３法はどの量産性
をもたらすことはできなかった。By repeating the above process, LCS
It is now possible to do this. Although LCS using a liquid enables the removal of scattered particles in the same way as the present invention, it requires a cleaning step, etc., and the LC3 method of the present invention using a gas could not bring about any mass productivity.
本発明において、被加工面は上面をＸＹテーブル上に配
設をした。しかしこれは垂直に配設をしても、またレー
ザ光を下方向より照射すべくＸＹテーブルの下面に配設
してもよい。さらにこの基板の移動ではなくレーザの光
源を移動させることにより開溝を作ってもよいことはい
うまでもない。In the present invention, the upper surface of the surface to be processed is placed on an XY table. However, it may be arranged vertically, or it may be arranged on the lower surface of the XY table so as to irradiate the laser beam from below. Furthermore, it goes without saying that the open grooves may be created by moving the laser light source instead of moving the substrate.
（２０）
以上の実施例においては、ＩＣ１＋ ＨＦ 、ＣＦ７
Ｂｒ ＋ ＣＨＦ／ ＋ＣＣＩ、室温では安定なハロゲ
ン元素であるＣＣ１＋０ 。(20) In the above examples, IC1+ HF, CF7
Br + CHF/ +CCI, CC1+0, which is a halogen element that is stable at room temperature.
ＣＦ、 ＋ Ｏ，（ＯｗｌはＡｉｒとしてもよい）も本
発明においてきわめて重要な反応性気体である。CF, + O, (Owl may also be replaced by Air) is also a very important reactive gas in the present invention.
また第２図において、光電変換装置は２０ｃｍ Ｘ ６
０ｃ１１１を４つ組み合わせて４０ｃｍ Ｘ １２０ｃ
ｍのＮＥＤＯ規格とするのではなく 、４０ｃｍＸ４０
ｃｍを３枚配列し、同じパネル形成を行ってもよい。ま
た電卓用その他民生用の光電変換装置を含む半導体装置
その他レーザ加工のすべてに対し、本発明方法を応用す
ることも有効である。In addition, in Figure 2, the photoelectric conversion device is 20cm x 6
Combining 4 pieces of 0c111, 40cm x 120c
Instead of using the NEDO standard of m, 40cm x 40
The same panel formation may be performed by arranging three cm. It is also effective to apply the method of the present invention to all laser processing of semiconductor devices including photoelectric conversion devices for calculators and other consumer use.
第１図は本発明のレーザ加工方法を行うためのレーザ加
工機のブロック図を示す。
第２図は第１図のレーザ加工機のノズル部の拡大図を示
す。
第３図は本発明のレーザ加工方法によって作られた光電
変換装置を示す。
第４図は第３図の光電変換装置における第３の開溝に関
し、従来方法（Ａ）２本発明方法（Ｂ）を（２１）
比較して示したものである。
特許出願人
（２２）
イ２ａ
−３５３−FIG. 1 shows a block diagram of a laser processing machine for carrying out the laser processing method of the present invention. FIG. 2 shows an enlarged view of the nozzle section of the laser processing machine shown in FIG. 1. FIG. 3 shows a photoelectric conversion device manufactured by the laser processing method of the present invention. FIG. 4 shows a comparison between the conventional method (A) and the method (B) of the present invention (21) regarding the third groove in the photoelectric conversion device shown in FIG. Patent applicant (22) I2a -353-
Claims (1)
工程と、該導電膜に第１の開溝を形成する工程と、該開
溝上および前記第１の導電膜上に光照射することにより
光起電力を発生する半導体を形成する工程と、該半導体
に第２の開溝を形成する工程と、該開溝上および前記半
導体上に第２の導電膜を形成する工程と、該工程の後、
該第２の導電膜の被加工面に第３の開溝を形成する工程
とを有する光電変換装置の作製方法において、前記開溝
の少なくとも１つの開溝の形成に際し、被加工面にハロ
ゲン元素を含む気体を噴射するとともに、該噴射された
領域にレーザ光を照射することにより開溝を形成するこ
とを特徴とする光電変換装置作製方法。 ２、特許請求の範囲第１項において、第１の導電（１） 膜または第２の導電膜は金属またはインジュームまたは
スズの酸化物を主成分とする透光性導電膜の単層または
多層膜よりなり、ハロゲン化物を含む気体は塩化物を含
有することを特徴とする光電変換装置作製方法。 ３、特許請求の範囲第１項において、半導体は珪素を主
成分とする水素またはハロゲン元素が添加された非単結
晶半導体よりなり、ハロゲン化物を含む気体は弗化物を
含有することを特徴とする光電変換装置作製方法。 ４、特許請求の範囲第１項において、ハロゲン化物を含
む気体は、空気（Ａｉｒ ）、窒素、アルゴン、酸素を
キャリアガスとして混入させたことを特徴とする光電変
換装置作製方法。[Claims] 1. A step of forming a first conductive film on a substrate having an insulating surface, a step of forming a first trench in the conductive film, and a step of forming a first conductive film on the trench and the first trench. a step of forming a semiconductor that generates a photovoltaic force by irradiating light on a conductive film; a step of forming a second trench in the semiconductor; and a step of forming a second conductive film on the trench and the semiconductor. a step of forming, and after the step,
forming a third groove on the surface to be processed of the second conductive film, in which a halogen element is added to the surface to be processed when forming at least one of the grooves; 1. A method for manufacturing a photoelectric conversion device, comprising: injecting a gas containing the above-mentioned gas, and forming an open groove by irradiating the injected region with a laser beam. 2. In claim 1, the first conductive film (1) or the second conductive film is a single layer or multilayer of a translucent conductive film whose main component is metal, indium, or tin oxide. 1. A method for producing a photoelectric conversion device comprising a film, wherein the halide-containing gas contains chloride. 3. In claim 1, the semiconductor is characterized in that it consists of a non-single-crystal semiconductor mainly composed of silicon to which hydrogen or a halogen element is added, and the gas containing a halide contains a fluoride. Method for manufacturing a photoelectric conversion device. 4. A method for manufacturing a photoelectric conversion device according to claim 1, characterized in that the gas containing a halide is mixed with air, nitrogen, argon, or oxygen as a carrier gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58149082A JPS6041266A (en) | 1983-08-15 | 1983-08-15 | Manufacture of photoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58149082A JPS6041266A (en) | 1983-08-15 | 1983-08-15 | Manufacture of photoelectric converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6041266A true JPS6041266A (en) | 1985-03-04 |
| JPH0514432B2 JPH0514432B2 (en) | 1993-02-25 |
Family
ID=15467299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58149082A Granted JPS6041266A (en) | 1983-08-15 | 1983-08-15 | Manufacture of photoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6041266A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7271042B2 (en) | 1996-12-12 | 2007-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Laser annealing method and laser annealing device |
| JP2013536996A (en) * | 2010-09-01 | 2013-09-26 | エルジー イノテック カンパニー リミテッド | Photovoltaic power generation apparatus and manufacturing method thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8048774B2 (en) * | 2001-10-01 | 2011-11-01 | Electro Scientific Industries, Inc. | Methods and systems for laser machining a substrate |
| ATE552934T1 (en) * | 2003-06-06 | 2012-04-15 | Electro Scient Ind Inc | LASER PROCESSING USING A SURFACTANT FILM |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5712568A (en) * | 1980-06-02 | 1982-01-22 | Rca Corp | Method of producing solar battery |
| JPS5753986A (en) * | 1980-07-25 | 1982-03-31 | Eastman Kodak Co | |
| JPS57176778A (en) * | 1981-03-31 | 1982-10-30 | Rca Corp | Solar battery array |
-
1983
- 1983-08-15 JP JP58149082A patent/JPS6041266A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5712568A (en) * | 1980-06-02 | 1982-01-22 | Rca Corp | Method of producing solar battery |
| JPS5753986A (en) * | 1980-07-25 | 1982-03-31 | Eastman Kodak Co | |
| JPS57176778A (en) * | 1981-03-31 | 1982-10-30 | Rca Corp | Solar battery array |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7271042B2 (en) | 1996-12-12 | 2007-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Laser annealing method and laser annealing device |
| US7351646B2 (en) * | 1996-12-12 | 2008-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Laser annealing method and laser annealing device |
| US7687380B2 (en) | 1996-12-12 | 2010-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Laser annealing method and laser annealing device |
| JP2013536996A (en) * | 2010-09-01 | 2013-09-26 | エルジー イノテック カンパニー リミテッド | Photovoltaic power generation apparatus and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0514432B2 (en) | 1993-02-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3150322B2 (en) | Wiring cutting method by laser and laser processing device | |
| JP3398376B2 (en) | Method of manufacturing via hole in polymer dielectric layer | |
| EP1404481B1 (en) | A laser machining system and method | |
| US5386430A (en) | Excimer laser processing method and apparatus | |
| JPS62293740A (en) | Manufacture of semiconductor device | |
| JPS6041266A (en) | Manufacture of photoelectric converter | |
| JPH034319B2 (en) | ||
| JPS6040683A (en) | Laser working method | |
| Redmond et al. | The application of laser process technology to thin film packaging | |
| JPH06326337A (en) | Laser beem machine | |
| JPS59206195A (en) | Laser beam machining method | |
| JPH0426957B2 (en) | ||
| JPS6153731A (en) | Etching method by ultraviolet ray and apparatus for the same | |
| JPS59198771A (en) | Manufacture of photoelectric conversion device | |
| JP2540501B2 (en) | Laser processing method | |
| JPS6037283A (en) | Laser working method | |
| Shaver et al. | Production applications of laser microchemistry | |
| JPH01301863A (en) | Formation of tin oxide film | |
| JPS6037288A (en) | Laser working method | |
| JPH0626207B2 (en) | Light processing method | |
| JPS6066872A (en) | Manufacture of semiconductor device | |
| Cheng et al. | Laser direct imaging of transparent indium tin oxide electrodes using high speed stitching techniques | |
| JPH04245458A (en) | Formation of film | |
| JP3279296B2 (en) | Semiconductor device | |
| JPS6082286A (en) | Laser working method |