JPS6040665B2 - metal vapor discharge lamp - Google Patents
metal vapor discharge lampInfo
- Publication number
- JPS6040665B2 JPS6040665B2 JP4432775A JP4432775A JPS6040665B2 JP S6040665 B2 JPS6040665 B2 JP S6040665B2 JP 4432775 A JP4432775 A JP 4432775A JP 4432775 A JP4432775 A JP 4432775A JP S6040665 B2 JPS6040665 B2 JP S6040665B2
- Authority
- JP
- Japan
- Prior art keywords
- glass
- discharge lamp
- arc tube
- metal vapor
- vapor discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
- H01J9/245—Manufacture or joining of vessels, leading-in conductors or bases specially adapted for gas discharge tubes or lamps
- H01J9/247—Manufacture or joining of vessels, leading-in conductors or bases specially adapted for gas discharge tubes or lamps specially adapted for gas-discharge lamps
Description
【発明の詳細な説明】
高圧金属蒸気放電灯用発光管材料は、まず透光性、耐熱
性、気密性、加工の容易さという点において優れていな
ければならないが、そのほか封入物質と反応しないとい
う性質をもっていることも重要である。[Detailed Description of the Invention] Arc tube materials for high-pressure metal vapor discharge lamps must have excellent light transmittance, heat resistance, airtightness, and ease of processing. It is also important to have characteristics.
従来これらの条件を満たすものとして石英ガラスが広く
使用されてきたが、ナトリウム金属を含んだ封入物を封
入する場合には上記の反応が問題となってきた。本発明
はこれらの現状を考慮した結果なされたものであり、本
発明者等は内面に熱綱彰脹係数が２×１０‐６（℃）‐
１より大きい少なくとも一種類のガラス薄膜が被着して
ある石英ガラス（熱膨脹係数：約０．５５×１０‐６（
ｏｏ）−１）あるいはバィコールガラス管（熱膨脹係数
：約０．８×１０‐６（℃）‐１）を用いて発光管を作
成し、さらにその内面に窒化珪素Ｓｉ３Ｎ岬莫（熱膨脹
係数：約３．９×１０‐６（００）‐１）を被着した後
、金属ナトリウムあるいはハロゲン化ナトリウムを封入
すれば、Ｓｉ３Ｎ４膜の優れた耐ナトリウム性のため発
光管基材ガラスの腐蝕が防止でき、長時間にわたって高
い効率を維持する高圧金属蒸気放電灯が得られることを
確認した。Although quartz glass has conventionally been widely used as a material that satisfies these conditions, the above-mentioned reaction has become a problem when enclosing a filler containing sodium metal. The present invention was made as a result of taking these current circumstances into consideration, and the inventors of the present invention have developed a thermal expansion coefficient of 2×10-6 (°C) on the inner surface.
Silica glass (thermal expansion coefficient: approximately 0.55 x 10-6) coated with at least one type of glass thin film larger than 1
oo)-1) or a Vycor glass tube (thermal expansion coefficient: approximately 0.8 x 10-6 (°C)-1) to create an arc tube, and further coat silicon nitride Si3N on its inner surface (thermal expansion coefficient: If metal sodium or sodium halide is sealed after depositing approximately 3.9 It was confirmed that a high-pressure metal vapor discharge lamp that maintains high efficiency over a long period of time can be obtained.
以下実施例に基づいてその内容を詳述する。実施例 １
前述の目的を達成する窒化珪素膜は、たとえば７００〜
９００ｑ０におけるモノシラン（ＳｉＨ）とアンモニア
（ＮＨ３）の反応を利用した化学気相蒸着法を用いて形
成できるが、その際基板ガラスの熱膨脹係数を考慮する
必要がある。The contents will be explained in detail below based on examples. Example 1 A silicon nitride film that achieves the above-mentioned purpose is, for example, 700~
It can be formed using a chemical vapor deposition method that utilizes a reaction between monosilane (SiH) and ammonia (NH3) at 900q0, but in this case it is necessary to take into account the coefficient of thermal expansion of the substrate glass.
なぜなら窒化珪素よりも熱膨脹係数が大幅に小さいガラ
スを使用すると、表面に被着する窒化珪素膜にひび割れ
が生じ、耐ナトリウム性が著しく減少するからである。
本発明者等の実験結果によると、熱膨脹係数が２×１０
‐６（ｑｏ）‐１より大きいガラス基板を使用すると、
このようなひび割れの問題が避けられることが判明した
。そこで石英ガラス管内にこのような条件を満たす棚珪
酸ガラス薄膜（熱膨脹係数：組成により異なるが約３．
２×１０‐６（℃）‐１）を形成して発光管を作成した
後、その内面にさらにＳｉ３Ｎ汎英を被着してその効果
を調べた。棚珪酸ガラスとしては＆０３が約２０モル％
組成のものを選び、薄膜形成方法としては、１４００ｑ
ｏにおける、四塩化珪素（ＳＩＣ１４）、三塩化ホウ素
（ＢＣ１３）および酸素（０２）の反応による化学気相
蒸着法を採用した。なお石英反応管（内径１２肌回転可
能）の加熱は反応管に沿って平行に等速度で移動をくり
かえす酸水素炎バーナーにより行ない、膜厚は約２００
仏のとした。次にこのようにして内面に棚珪酸ガラスを
被着した石英ガラス管に図１に示すようにガス導入管３
および排気管４をとりつけ、両端に主電極および起動極
を封着して発光管１を完成させる。この発光管内面への
Ｓｉ３Ｎ４膿の彼着は、まずこれを電気炉２の中に入れ
て８００℃に加熱した後、ガス導入管３よりキャリャガ
スとしての窒素と、１％（容積比）のアンモニアおよび
０．０５％（容量比）のモノシランからなる混合ガスを
流入させ、排気管４よりその一部を流出させることによ
り行なった。薄膜の生成速度は約３００△／分とし、発
光管内面に７０仇仇のＳｉ３Ｎぷ臭を彼着した後、混合
ガスの流入を停止して発光管を冷却し、電気炉２より取
出してガス導入管４を発光管になるべく近い箇所でチッ
プシールする。その後排気管３より封入物としてキセノ
ンガスを２０Ｔｏｎ、Ｈｇ−Ｎａ（７０モル％）アマル
ガムを１００の９充填した後排気管をチップシールして
放電灯を完成させた。この放電灯を１００ボルト、２ア
ンペアで点灯した場合の管壁温度は約６００ｑＣで発光
スペクトルは５６０〜７０仇のに広がっており、いわゆ
る高圧ナトリウムランプに固有な黄白色の発光を呈した
。またこのときのランプの発光効率は約７０１仇／Ｗで
、１００加持間点灯後においても光東維持率が９０％で
あることが確かめられた。第２図はこのようにして作成
された放電灯の断面図を示すものであり、１は内面に２
００仏のの棚珪酸ガラス薄膜を被着した石英ガラス発光
管で、５はその内面にさらに上記ＣＶＤ法により被着し
た０．７仏肌のＳｉ３Ｎ４膜、６はトリアを塗布したタ
ングステン主電極、７はタングステン起動極、８はモリ
ブデン箔を示す。This is because if glass, which has a coefficient of thermal expansion much smaller than that of silicon nitride, is used, the silicon nitride film deposited on the surface will crack, and the sodium resistance will be significantly reduced.
According to the experimental results of the present inventors, the coefficient of thermal expansion is 2×10
When using a glass substrate larger than -6(qo)-1,
It has been found that such cracking problems can be avoided. Therefore, a thin shelf silicate glass film (coefficient of thermal expansion: approximately 3.0%, although it varies depending on the composition) that satisfies these conditions is placed inside the quartz glass tube.
2×10-6 (° C.)-1) to create an arc tube, and then a Si3N layer was further deposited on the inner surface of the tube to examine its effect. &03 is about 20 mol% as shelf silicate glass
The composition is selected, and the thin film formation method is 1400q.
A chemical vapor deposition method using a reaction of silicon tetrachloride (SIC14), boron trichloride (BC13), and oxygen (02) was employed. The quartz reaction tube (inner diameter 12 degrees rotatable) was heated by an oxyhydrogen flame burner that repeatedly moved parallel to the reaction tube at a constant speed, and the film thickness was approximately 200 mm.
It was said by Buddha. Next, as shown in FIG.
Then, an exhaust pipe 4 is attached, and a main electrode and a starting electrode are sealed at both ends to complete the arc tube 1. The adhesion of Si3N4 pus to the inner surface of the arc tube is achieved by first placing it in the electric furnace 2 and heating it to 800°C, then adding nitrogen as a carrier gas and 1% (volume ratio) ammonia from the gas introduction tube 3. A mixed gas consisting of monosilane and 0.05% (volume ratio) was introduced, and a part of the gas was allowed to flow out from the exhaust pipe 4. The thin film formation rate was approximately 300△/min, and after a 70-degree smell of Si3N was deposited on the inner surface of the arc tube, the flow of the mixed gas was stopped, the arc tube was cooled, and the arc tube was taken out from the electric furnace 2 and the gas was removed. Chip-seal the introduction tube 4 as close as possible to the arc tube. Thereafter, the exhaust pipe 3 was filled with 20 tons of xenon gas and 100% of Hg-Na (70 mol %) amalgam as fillers, and the exhaust pipe was chip-sealed to complete the discharge lamp. When this discharge lamp was lit at 100 volts and 2 amperes, the tube wall temperature was about 600 qC, the emission spectrum was spread from 560 to 70 qC, and it exhibited a yellow-white luminescence characteristic of so-called high-pressure sodium lamps. The luminous efficiency of the lamp at this time was approximately 701 m/W, and it was confirmed that the light retention rate was 90% even after lighting for 100 cycles. Figure 2 shows a cross-sectional view of the discharge lamp created in this way.
00 is a quartz glass arc tube coated with a thin silicate glass film of 0.00 mm, 5 is a Si3N4 film of 0.7 mm coated on its inner surface by the above-mentioned CVD method, 6 is a tungsten main electrode coated with thoria, 7 indicates a tungsten starting electrode, and 8 indicates a molybdenum foil.
実施例 ２
次に実施例１で述べたものと同じ発光管
（Ｓｉ３Ｎぷ莫被着済み）を沃化ナトリウムを封入した
メタルハラィドランプに応用した場合の効果について述
べる。Example 2 Next, we will describe the effect when the same arc tube (pre-coated with Si3N) as described in Example 1 is applied to a metal halide lamp filled with sodium iodide.
封入物としては、水銀（５０の２）のほか、沃化ナトリ
ウム（１５の９）、沃化タリウム（２雌）、沃化インジ
ウム（０．５の９）、さらに起動用ガスとしてアルゴン
ガス（２伽ｏｒｒ）を封入した。このランプは１５０ボ
ルト、２アンペアで点灯すると「 ランプ効率８０１の
／Ｗ、演色評価指数９０となるが、Ｓｉ３Ｎ４膜を備え
ているのでハロゲン化ナトリウムが高温度のァーク中で
解離して生じる金属ナトリウムによる管壁の腐蝕を防止
できるため５０００時間点灯後においてもランプ電圧お
よび放電開始電圧の変動が１０％以下であり、光東維持
率も８５％以上という好ましい特性をもっていることが
確認された。以上述べた二つの実施例から本発明による
発光管内面でのガラス薄膜およびＳｉ３Ｎ４薄膜の効果
は明らかである。In addition to mercury (2 of 50), the inclusions include sodium iodide (9 of 15), thallium iodide (2 of 2), indium iodide (9 of 0.5), and argon gas (9 of 0.5) as a starting gas. 2 orr) was enclosed. When this lamp is lit at 150 volts and 2 amperes, it has a lamp efficiency of 801/W and a color rendering index of 90, but because it is equipped with a Si3N4 film, the sodium halide dissociates in a high-temperature arc and produces metallic sodium. It was confirmed that the lamp has favorable characteristics, with fluctuations in lamp voltage and discharge starting voltage being less than 10% even after 5,000 hours of operation, and a light retention rate of more than 85%. The effects of the glass thin film and Si3N4 thin film on the inner surface of the arc tube according to the present invention are clear from the two examples described above.
第１図は本発明を具体化するため化学気相蒸着法により
Ｓｉ３Ｎ４膜を被着する一実施例を示す図であり、第２
図は本発明による金属蒸気放電灯の発光管の断面を示す
図である。
第１図
第２図FIG. 1 is a diagram showing an example in which a Si3N4 film is deposited by chemical vapor deposition to embody the present invention;
The figure is a cross-sectional view of an arc tube of a metal vapor discharge lamp according to the present invention. Figure 1 Figure 2
Claims (1)
ガラス管の内面に熱膨脹係数が２×１０＾−＾６（℃）
＾−＾１より大きいガラス薄膜を被着し、さらにその内
面に窒化硅素（Ｓｉ＿３Ｎ＿４）膜を被着して発光管を
形成し、該発光管内への封入物の一成分として金属ナト
リウムあるいはハロゲン化ナトリウムを封入してなるこ
とを特徴とする金属蒸気放電灯。1 The inner surface of the base glass tube made of quartz glass or Vycor glass has a coefficient of thermal expansion of 2 x 10^-^6 (℃)
A glass thin film larger than ^-^1 is deposited, and a silicon nitride (Si_3N_4) film is further deposited on the inner surface to form an arc tube, and metallic sodium or halogenated metal is added as a component of the filling in the arc tube. A metal vapor discharge lamp characterized by being filled with sodium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4432775A JPS6040665B2 (en) | 1975-04-14 | 1975-04-14 | metal vapor discharge lamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4432775A JPS6040665B2 (en) | 1975-04-14 | 1975-04-14 | metal vapor discharge lamp |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51120076A JPS51120076A (en) | 1976-10-21 |
| JPS6040665B2 true JPS6040665B2 (en) | 1985-09-12 |
Family
ID=12688396
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4432775A Expired JPS6040665B2 (en) | 1975-04-14 | 1975-04-14 | metal vapor discharge lamp |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6040665B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2819988B2 (en) * | 1993-06-29 | 1998-11-05 | 松下電工株式会社 | Metal vapor discharge lamp |
| TW347547B (en) * | 1994-05-17 | 1998-12-11 | Toshiba Light Technic Kk | Discharge lamp and illumination apparatus using the same |
| US6600254B2 (en) * | 2000-12-27 | 2003-07-29 | Koninklijke Philips Electronics N.V. | Quartz metal halide lamps with high lumen output |
-
1975
- 1975-04-14 JP JP4432775A patent/JPS6040665B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51120076A (en) | 1976-10-21 |
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