JPS6037616B2 - X-ray lithography equipment - Google Patents
X-ray lithography equipmentInfo
- Publication number
- JPS6037616B2 JPS6037616B2 JP55006377A JP637780A JPS6037616B2 JP S6037616 B2 JPS6037616 B2 JP S6037616B2 JP 55006377 A JP55006377 A JP 55006377A JP 637780 A JP637780 A JP 637780A JP S6037616 B2 JPS6037616 B2 JP S6037616B2
- Authority
- JP
- Japan
- Prior art keywords
- ray
- rays
- exposed
- incident
- shielding plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
半導体集積回路のような固体デバイスを製作する場合の
微細加工にＸ線リゾグラフイ装置が用いられるこの装置
は、Ｘ線吸収体で形成したマスクパターンを有するマス
クを介してシリコンウェーハのような被加工体にＸ線を
照射するもので、上言己ゥェーハにＸ線レジストを塗布
しておき、これを現像してエッチング処理を施す。DETAILED DESCRIPTION OF THE INVENTION X-ray lithography equipment is used for microfabrication when manufacturing solid-state devices such as semiconductor integrated circuits. A workpiece such as a wafer is irradiated with X-rays, and the wafer is coated with an X-ray resist, which is developed and etched.
上述のようなリゾグラフイ装置においては、被加工体お
よびマスクよりなる被露光体の全面に入射するＸ線量が
均一でなければならない。しかし通常のＸ線管において
は、取出されるＸ線の方向がターゲットの電子照射面に
対して傾斜していることに起因してＸ線の強度分布が不
均一となり、このため被露光体の大きさに制限を受ける
欠点があった。本発明は上述の欠点を除去しようとする
ものである。第１図は本発明実施例の一部を縦断した正
面図で、Ｘ線管１は筒状の真空気密蔭体２の一端にター
ゲット３を設けて、該ターゲットと対向するように電子
線集東電極４およびその内部に配遣された熱電子放射陰
極５からなる電子銃を配置してある。すなわち陰極５か
ら放射される電子線ｅを電極４の作用で例えば径数粍に
絞ってターゲットの電子照射面６に入射させるもので、
その入射点の側部における蟹体壁にベリリウム等のＸ線
窓７を形成してある。従って上記電子照射面に点×線源
ｐが形成され、このＸ線源から窓７を通して軟×線×が
円錘状に照射される。電子照射面６は紙面と直角な平面
状に形成され、かつ上記電子線ｅに対して４５〜６０度
またはＸ線ｘの軸に対しては３０〜４５度に傾斜してい
る。上述のようなＸ線管１における窓７の外側に被露光
体８を配置すると共にその前面に駆動装置９で矢印ｙの
ように駆動されるＸ線遮蔽板１０を設けてある。これら
はＸ線ｘの軸と直角に配置されたもので、被露光体舵ま
例えば６０〜７畔毛の径を有し、前記Ｘ線源ｐから１０
０粍程度離してある。従って被露光体８は電子照射面６
に対して紙面を含む平面内で傾斜しているが、前記遮蔽
板１０はこの平面内、すなわち上記傾斜の方向へ矢印ｙ
のように適当な速度で移動して、被露光体８に入射する
Ｘ線を遮断する。被露光体８は、表面にＸ線レジスト１
１を塗布した例えばシリコンウェーハ１２の前面に円環
状のスべ−サ１３を介してマスク１４を配置したもので
、該マスクはＸ線透過材の裏面にＸ線吸収体のマスクパ
ターン１５が形成されている。上述の装置において、例
えば遮蔽板１０を実線のように開放した状馳でＸ線管１
に高電圧を加えてＸ線源ｘを放射することにより露光を
行う。In the above-described lithography apparatus, the amount of X-rays incident on the entire surface of the exposed object consisting of the processed object and the mask must be uniform. However, in a normal X-ray tube, the direction of the extracted X-rays is inclined with respect to the electron irradiation surface of the target, resulting in uneven X-ray intensity distribution. It had the disadvantage of being limited in size. The present invention seeks to obviate the above-mentioned drawbacks. FIG. 1 is a partially longitudinally sectional front view of an embodiment of the present invention. An electron gun consisting of an east electrode 4 and a thermionic emission cathode 5 disposed inside the east electrode 4 is arranged. That is, the electron beam e emitted from the cathode 5 is narrowed down to a diameter of, for example, a few millimeters by the action of the electrode 4, and is made to enter the electron irradiation surface 6 of the target.
An X-ray window 7 made of beryllium or the like is formed in the crab body wall at the side of the incident point. Therefore, a point x-ray source p is formed on the electron irradiation surface, and soft x-rays x are irradiated from this X-ray source through the window 7 in a conical shape. The electron irradiation surface 6 is formed in a planar shape perpendicular to the plane of the paper, and is inclined at 45 to 60 degrees with respect to the electron beam e or 30 to 45 degrees with respect to the axis of the X-ray x. An exposed object 8 is disposed outside the window 7 of the X-ray tube 1 as described above, and an X-ray shielding plate 10 is provided in front of the exposed object 8, which is driven by a drive device 9 in the direction of arrow y. These are arranged perpendicularly to the axis of the X-ray
They are about 0 mm apart. Therefore, the exposed object 8 is the electron irradiation surface 6
The shielding plate 10 is inclined in a plane including the plane of the paper, that is, in the direction of the inclination as shown by the arrow y.
It moves at an appropriate speed to block the X-rays incident on the object to be exposed 8. The exposed object 8 has an X-ray resist 1 on its surface.
For example, a mask 14 is placed on the front surface of a silicon wafer 12 coated with 1, via an annular spacer 13, and the mask has a mask pattern 15 of an X-ray absorber formed on the back surface of an X-ray transparent material. has been done. In the above-mentioned apparatus, for example, the X-ray tube 1 is opened with the shielding plate 10 open as shown by the solid line.
Exposure is performed by applying a high voltage to the X-ray source x and emitting radiation from the X-ray source x.
その露光時間が例えば７分経過したとき駆動装置９によ
り遮蔽板１０を点線で示したように矢印ｙの方向へ適当
な速度で移動させて、Ｘ線ｘを除々に遮断し、露光の開
始から例えば１０分を経過した時点で被露光体８の入射
するＸ線が完全に遮断されるようにするもので、このよ
うな動作によって被露光体８の各部に入射するＸ線量を
ほぼ均一にすることができる。つぎにその原理を説明す
る。第２図は第１図におけるＸ線管のターゲット３の一
部を縦断して拡大した図で、電子線ｅは夕−ゲットの電
子照射面６に対しては例えば６０度の角度で入射する。
この電子線の大部分はターゲットの内部へ多少侵入した
位置でＸ線を発生させるから、Ｘ線の発生面は表面から
微小距離公の位置にあるものと考えることができる。こ
のＸ線発生面Ｑ上の点Ｒにおいて発生し、第１図におけ
る被露光体８の右端に入射するＸ線をｘ，、左側に入射
するＸ線を彬とすると、Ｘ線ｘ，は距離ｄ，だけターゲ
ット３中を通過し、均は平だけ通過する。かつ電子照射
面６がＸ線ｘの軸０に対して傾斜しているために距離ｄ
，よりｄ２が大きくなって、Ｘ線均はｘ，より大きい減
衰を受ける。従って被露光体８の右端に入射するＸ線が
左端に入射するＸ線より強くなって、その強度分布に不
均一を生ずる。第３図は第１図における被露光体８の位
置にＸ線感光板を配置し、遮蔽板１０を終始開放状態に
保持することにより全面に一定時間の露光を施して現像
したもので、感光板Ｓには窓７の投影図形Ｔが現れる。When the exposure time has elapsed, for example, 7 minutes, the drive device 9 moves the shielding plate 10 at an appropriate speed in the direction of the arrow y as shown by the dotted line to gradually block the X-rays x, starting from the start of the exposure. For example, after 10 minutes have elapsed, the X-rays incident on the exposed object 8 are completely blocked, and this operation makes the amount of X-rays incident on each part of the exposed object 8 almost uniform. be able to. Next, the principle will be explained. FIG. 2 is a longitudinally enlarged view of a part of the target 3 of the X-ray tube in FIG. .
Since most of this electron beam generates X-rays at a position that has penetrated into the target to some extent, it can be considered that the X-ray generating surface is located at a very small distance from the surface. If the X-rays generated at point R on the X-ray generation surface Q and incident on the right end of the exposed object 8 in FIG. d, passes through the target 3, and only the average passes through the target 3. And since the electron irradiation surface 6 is inclined with respect to the axis 0 of the X-ray x, the distance d
, d2 becomes larger than x, and the X-ray average receives a larger attenuation than x. Therefore, the X-rays incident on the right end of the exposed object 8 are stronger than the X-rays incident on the left end, resulting in non-uniformity in the intensity distribution. In Figure 3, an X-ray photosensitive plate is placed at the position of the exposed object 8 in Figure 1, and the entire surface is exposed to light for a certain period of time by keeping the shielding plate 10 open from beginning to end. A projected figure T of the window 7 appears on the plate S.
この感光板Ｓをミクロフオトメータに掛けて第１図にお
ける矢印ｙと平行な方向へｙ，，ｙ２，ｙ３で示したよ
うに３個所を走査してその黒化度１を測定すると、第４
図にそれぞれ同符号で示したような曲線が得られる。ま
た第１図の矢印ｙと直角なｚ方向へ、ｚ．，ｚ２，ｚ３
で示したように３個所を走査すると、第５図に同符号で
示したような黒化度１の曲線が得られる。すなわちこの
ような測定によっても、第１図の被露光体８に入射する
Ｘ線の強度分布が紙面と直角なｚ方向ではほぼ均一であ
るが、矢印ｙ方向においては次第に低下していることが
証明される。なお、第２図における軸○と電子照射面６
との間の角度◇を３０度、電子線ｅと電子照射面との間
の角度のを６０度、またＸ線ｘ，，均の間の角度、すな
わちＸ線の広がり角ａを１５度、ターゲット３の材質を
シリコンＳｉとして第４図におけるＸ線の強化比ｂ／ａ
を実測にもとづいて算出すると電子線ｅの加速電圧が２
０ＫＶのとき約０．８８ ３０ＫＶのとき約０．７８で
ある。またｚ方向におけるＸ線の強度変化は、第５図の
ように袷んど無視し得る程度に過ぎない。従つて被露光
体８の露光に際して、遮蔽板１０を例えば前述のように
駆動して、各部の露光時間ｔを第４図に破線で示したよ
うに調整すると全面がほぼ均一な量のＸ線で露光される
。このように本発明は簡単な装置によって被露光体の全
面をほぼ均等に露光し得るもので、このため被露光体を
充分大きくすることができる。When this photosensitive plate S is placed on a microphotometer and scanned at three locations as indicated by y, , y2, and y3 in the direction parallel to the arrow y in FIG. 1, the degree of blackening 1 is measured.
Curves shown with the same symbols in the figure are obtained. Also, in the z direction perpendicular to the arrow y in FIG. 1, z. ,z2,z3
When three locations are scanned as shown in FIG. 5, a curve with a degree of blackening of 1 as shown in FIG. 5 by the same reference numeral is obtained. In other words, even with such measurements, it can be seen that the intensity distribution of the X-rays incident on the exposed object 8 in FIG. 1 is almost uniform in the z direction perpendicular to the page, but gradually decreases in the y direction of the arrow be proven. In addition, the axis ○ and the electron irradiation surface 6 in Fig. 2
The angle ◇ between is 30 degrees, the angle between the electron beam e and the electron irradiation surface is 60 degrees, and the angle between the X-rays x,, and the spread angle a of the X-rays is 15 degrees, When the material of the target 3 is silicon Si, the X-ray reinforcement ratio b/a in Fig. 4 is
When calculated based on actual measurements, the acceleration voltage of the electron beam e is 2
It is about 0.88 at 0KV and about 0.78 at 30KV. Further, the change in the intensity of X-rays in the z direction is only to a negligible extent as shown in FIG. Therefore, when exposing the object 8, if the shielding plate 10 is driven, for example, as described above, and the exposure time t of each part is adjusted as shown by the broken line in FIG. exposed to light. As described above, the present invention allows the entire surface of the object to be exposed to light to be exposed almost uniformly using a simple device, and therefore the object to be exposed can be made sufficiently large.
第１図は本発明実施例の縦断面を示した図、第２図は本
発明の原理を説明するための第１図の一部を縦断して拡
大した図、第３図はＸ線の強度分布を測定する感光板を
示した図、第４図および第５図はＸ線の強度分布曲線で
ある。
なお図において１はＸ線管、３は夕−ゲット、６は電子
照射面、８は被露光体、９は遮蔽板駆動装置、１川ま遮
蔽板である。次久風
次ふ幻
汐／１９
が２亀
次３鼠Fig. 1 is a longitudinal cross-sectional view of an embodiment of the present invention, Fig. 2 is a longitudinally enlarged view of a part of Fig. 1 for explaining the principle of the invention, and Fig. 3 is an X-ray Figures 4 and 5, which show a photosensitive plate for measuring intensity distribution, are X-ray intensity distribution curves. In the figure, 1 is an X-ray tube, 3 is a radiation getter, 6 is an electron irradiation surface, 8 is an exposed object, 9 is a shielding plate driving device, and 1 is a shielding plate. Tsugufufujifugenshio/19 Ga 2 Kameji 3 Mouse
Claims (1)
投射して近似的に点Ｘ線源とみなすことのできるＸ線源
を形成し、上記Ｘ線源から照射されるＸ線を前記電子照
射面に対して傾斜するように配置された平面状の被露光
体にほぼ直角に入射させると共に上記被露光体の各部に
入射するＸ線量がほぼ均等になるような速度をもつて前
記傾斜の方向へ移動するＸ線遮蔽板を前記被露光体の前
面に設けたことを特徴とするＸ線リゾグラフイ装置。1 Project an electron beam onto the electron irradiation surface of the target of the X-ray tube to form an X-ray source that can be approximately regarded as a point X-ray source, and use the X-rays irradiated from the X-ray source to The direction of the inclination is such that the X-rays are incident almost perpendicularly to a planar exposed object arranged to be inclined with respect to the plane, and at a speed such that the amount of X-rays incident on each part of the exposed object is approximately equal. An X-ray lithography apparatus characterized in that an X-ray shielding plate that moves is provided in front of the object to be exposed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55006377A JPS6037616B2 (en) | 1980-01-24 | 1980-01-24 | X-ray lithography equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55006377A JPS6037616B2 (en) | 1980-01-24 | 1980-01-24 | X-ray lithography equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56104438A JPS56104438A (en) | 1981-08-20 |
| JPS6037616B2 true JPS6037616B2 (en) | 1985-08-27 |
Family
ID=11636680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55006377A Expired JPS6037616B2 (en) | 1980-01-24 | 1980-01-24 | X-ray lithography equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6037616B2 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0715869B2 (en) * | 1983-09-30 | 1995-02-22 | 株式会社日立製作所 | Soft X-ray exposure system |
| JPH07407B2 (en) * | 1985-01-07 | 1995-01-11 | キヤノン株式会社 | Print control method |
| US5365561A (en) * | 1988-03-25 | 1994-11-15 | Canon Kabushiki Kaisha | Exposure control in an X-ray exposure apparatus |
| EP0357425B1 (en) | 1988-09-02 | 1996-11-06 | Canon Kabushiki Kaisha | An exposure apparatus |
| DE68925323T2 (en) * | 1988-09-14 | 1996-05-30 | Canon Kk | Exposure control in an X-ray exposure apparatus |
| JP2731955B2 (en) * | 1989-09-07 | 1998-03-25 | キヤノン株式会社 | X-ray exposure equipment |
| US5285488A (en) * | 1989-09-21 | 1994-02-08 | Canon Kabushiki Kaisha | Exposure apparatus |
| DE69030348T2 (en) * | 1989-10-03 | 1997-09-04 | Canon Kk | Exposure device |
| DE69126719T2 (en) * | 1990-03-09 | 1997-11-06 | Canon Kk | Exposure device |
| JP2587274Y2 (en) * | 1991-01-23 | 1998-12-16 | 林建設工業株式会社 | Stand-alone leg members for blackboards for recording construction records |
-
1980
- 1980-01-24 JP JP55006377A patent/JPS6037616B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56104438A (en) | 1981-08-20 |
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