JPS6036395A - Method for growing crystal of iii-v group compound semiconductor - Google Patents
Method for growing crystal of iii-v group compound semiconductorInfo
- Publication number
- JPS6036395A JPS6036395A JP14621683A JP14621683A JPS6036395A JP S6036395 A JPS6036395 A JP S6036395A JP 14621683 A JP14621683 A JP 14621683A JP 14621683 A JP14621683 A JP 14621683A JP S6036395 A JPS6036395 A JP S6036395A
- Authority
- JP
- Japan
- Prior art keywords
- crystal growth
- reaction tube
- crystal
- impurities
- growth material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、■−Ｖ族化合物半導体結晶成長方法に関する
。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for growing a -V group compound semiconductor crystal.
従来例の構成とその問題点
１−Ｖ族化合物半導体結晶成長方法の１つに半導体基板
上へのエピタキシャル成長法がある。この方法を用いて
作製した半導体エピタキシャル層は、半導体レーザやＦ
ＥＴ等のデバイスを作製、する上で重要なものである。Conventional Structure and Problems 1-One of the methods for growing group V compound semiconductor crystals is an epitaxial growth method on a semiconductor substrate. The semiconductor epitaxial layer produced using this method can be used for semiconductor lasers and F
This is important in manufacturing and implementing devices such as ET.
前者は、光通信、光情報処理、ＤＡＤ、 ＶＤ、レーザ
プリンタ等の光源として、後者は、高速、或はマイクロ
波、高周波回路部品として幅広い用途が考えられる。そ
して、これらデバイスの特性（主に電気特性と光学特性
）は。The former can be used as a light source for optical communications, optical information processing, DAD, VD, laser printers, etc., and the latter can be used in a wide range of applications as high-speed, microwave, and high-frequency circuit components. And what are the characteristics (mainly electrical and optical characteristics) of these devices?
主に半導体エピタキシャル層の特性により決定される。It is mainly determined by the characteristics of the semiconductor epitaxial layer.
従来からよく行なわれている半導体エピタキシャル成長
法の代表的なものとして、ＭＯＣＶＤ法（Ｍｅｔａｌ
Ｏｒｇａｎｉｃ Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅ
ｐｏｓｉｔｉｏｎ ：有機金属熱分解気相成長法）があ
るが、これは、半導 ′体裁板を載置したサセプタを収
納すると共に、外周に高周波加熱コイルを巻回した反応
管と、この反応管内に結晶成長用材料をキャリアガスに
のせて供給するための材料供給ラインとを備えた結晶成
長装置を用いている。この装置で１例えば化合物半導体
の１つであるＧａＡｓ結晶を成長させる場合。The MOCVD method (Metal
Organic Chemical Vapor De
position: organometallic pyrolysis vapor phase growth method), which houses a susceptor on which a semiconductor display plate is placed, a reaction tube with a high-frequency heating coil wound around its outer periphery, and a reaction tube inside the reaction tube. A crystal growth apparatus is used, which is equipped with a material supply line for supplying a crystal growth material on a carrier gas. For example, when growing a GaAs crystal, which is one of the compound semiconductors, using this apparatus.
結晶成長材料の（ＣＨ３） ３ Ｇａおよび、Ａ８Ｈ３
等をキャリアガスにのせて別々の材料供給ラインを通し
て反応管に送り５反応管内を高周波加熱コイルで制御加
熱してサセプタ上のＧａＡｓ単結晶基板上にＧａＡｓエ
ヒタキシャル結晶層を形成させるものである。(CH3) 3 Ga and A8H3 of crystal growth material
etc. are placed in a carrier gas and sent to a reaction tube through separate material supply lines, and the inside of the reaction tube is controlled and heated using a high-frequency heating coil to form a GaAs epitaxial crystal layer on a GaAs single crystal substrate on a susceptor.
しかしながら１通常こ、の方法により、良質な電気特性
および光学特性を有するＧａＡｓエピタキシャル結晶を
？尋ることは困難である。この原因は、主としてＧａＡ
ｓキビタキシャル結晶中に不純物が侵入することによる
と考えられ、この不純物は下記のような過程で結晶中に
侵入する。However, is it possible to produce GaAs epitaxial crystals with good electrical and optical properties using this method? It is difficult to ask. This is mainly due to GaA
This is thought to be due to the intrusion of impurities into the scbitaxial crystal, and this impurity intrudes into the crystal through the following process.
（１）結晶成長用材料（（ＣＨ３）３Ｇａ 、 ＡｓＨ
３等）中に存在し、ＧａＡｓエピタキシャル結晶成長中
に同時に結晶中に侵入する。(1) Crystal growth materials ((CH3)3Ga, AsH
3, etc.) and simultaneously invade the crystal during GaAs epitaxial crystal growth.
（２）材料供給ラインの内壁面などから離脱して、キャ
リアカスによって反応管に運ばれて成長中のＧａＡｓキ
ビタキシャル結晶中に侵入する。(2) It separates from the inner wall surface of the material supply line, is carried by the carrier scum to the reaction tube, and enters the growing GaAs chibitaxial crystal.
（３）材料供給ラインのリークにより、そのリーク箇所
から入ってキャリアカスによって反応管に運ばれ、成長
中のＧａＡｓエピタキシャル結晶中に侵入する。(3) Due to a leak in the material supply line, the carrier gas enters from the leak point and is carried by the carrier scum to the reaction tube, where it invades the GaAs epitaxial crystal that is being grown.
そして、このようにして不純物がＧａＡｓキピタ（ａ）
導電性を持たせるべく作製したＧａＡｓ エピタキシャ
ル結晶層が高抵抗を示し、期待する導電性が得られない
。In this way, the impurity is converted into GaAs capita(a).
The GaAs epitaxial crystal layer, which was made to have electrical conductivity, exhibits high resistance, and the expected electrical conductivity cannot be obtained.
（ｂ） 同一 Ｎ、子濃度レベルで、 ＧａＡｓエピタ
キシャル結晶層本来の特徴の１つである高移動度が得ら
れない。(b) At the same N concentration level, high mobility, which is one of the original characteristics of the GaAs epitaxial crystal layer, cannot be obtained.
（ｃ） ＧａＡｓエピタキシャル結晶層中に深い準位を
形成し、この結晶層に対し、光励起、電子線励起、或は
注入電流励起を行なった場合、上記結晶層中での禁制帯
幅にほぼ相当するエネルギーを持った光への変換効率が
著しく低下する。(c) When a deep level is formed in the GaAs epitaxial crystal layer and this crystal layer is subjected to photoexcitation, electron beam excitation, or injection current excitation, the bandgap width approximately corresponds to the forbidden band width in the above crystal layer. The efficiency of converting light into light with energy decreases significantly.
発明の目的 本発明は、上記従来の欠点を解消するもので。Purpose of invention The present invention solves the above-mentioned conventional drawbacks.
結晶成長中における不純物の侵入を防止することにより
、所望の良質な特性を有するエピタキシャル結晶層を碍
ることができるようにした１−ｖ族化合物半導体結晶成
長方法を提供することを目的とする。An object of the present invention is to provide a method for growing a 1-V group compound semiconductor crystal, which makes it possible to form an epitaxial crystal layer having desired quality characteristics by preventing the intrusion of impurities during crystal growth.
発明の構成
本発明は、この目的を達成するために、結晶成長用材料
が反応管に到達する前に、結晶成長用材料またはそのキ
ャリアガスに、結晶成長用材料における団族元素に対し
てモル比で１チ未満のＡ１を含むＡ４供給材料を添加す
ることにより、反応管に到達する以前に不純物をそのＡ
Ｊ化合物として除々した上で、反応管内で結晶成長用材
料から結晶成長させるようにしたＩ−Ｖ族化合物半導体
結晶成長方法を提供する。Structure of the Invention In order to achieve this object, the present invention provides a method for adding molar ratios to the crystal growth material or its carrier gas relative to group elements in the crystal growth material before the crystal growth material reaches the reaction tube. By adding an A4 feed containing less than 1% of A1, impurities are removed from the A1 before reaching the reaction tube.
Provided is a method for growing a group IV compound semiconductor crystal in which the crystal is grown from a crystal growth material in a reaction tube after being gradually removed as a J compound.
以上の構成によれば、不純物がＡｆｆｌ化合物として反
応管に到達する以前に除去されるので１反応管内には不
純物がほとんど存在せず、結晶成長用材料からエピタキ
シャル結晶成長させた場合に。According to the above configuration, since impurities are removed as Affl compounds before reaching the reaction tube, there are almost no impurities in one reaction tube, and when epitaxial crystal growth is performed from a crystal growth material.
この結晶中に不純物が侵入することがない。Impurities do not enter this crystal.
実施例の説明
以下添付図面に基づいて、本発明の一実施例を凹−ｖ族
化合物半導体としてアンド−ブト（ｕｎｄｏｐｅｄ）Ｇ
ａＡｓを例にとって詳細に説明する。DESCRIPTION OF THE EMBODIMENTS An embodiment of the present invention will be described below based on the accompanying drawings as an undoped G compound semiconductor.
This will be explained in detail by taking aAs as an example.
ＭＯＣＶＤ法を行なうための装置構成を示す図面におい
て、（１）は外周に高周波加熱コイル（２）が配設され
１こ反応管で、コイル（２）との協働により内部の濁度
を制御するための冷却剤１例えば水を貫流させるべく冷
却剤入口（３）および冷却剤出口（４）を備えている。In the drawing showing the configuration of an apparatus for carrying out the MOCVD method, (1) is a single reaction tube with a high-frequency heating coil (2) arranged around its outer periphery, and the turbidity inside is controlled by cooperation with the coil (2). It is provided with a coolant inlet (3) and a coolant outlet (4) to allow a coolant 1, for example water, to flow through it.
反応管（１）内には、サセプタ（５）が収納されており
、このサセプタ（５）上にＧａＡｓ単結晶基板（６）が
載置されている。さらに反応管（１）には、 Ｇａ系結
晶成長用材料供給ライン（７）およびＡｓ系結晶成長用
梠料供給ライン（８）が接続されている。供給ライン（
７）には、（ＣＨ３）３Ｇａ、 （Ｃ２Ｈｓ）ｓＧａ、
（Ｃ２Ｈ５）２ＧａＣＱなとのＧａ系結晶成長用材料（
９）が供給されると共に、単体のＡｔまたはＡＵを含む
化合物から成るＡＪ供給材料Ｏｑが供給される。このよ
うに供給ライン（７）に供給されたＧａ系結晶成長用材
料（９）とＡ１供給材料（１りとは、供給ライン（７）
を流れるＨ２などのキャリアガスと混り、反応管（１）
への搬送されるが、この搬送中にＧａ系結晶成長用材料
（９）に含まれる不純物がＡＣ供給材料（ＬＬ＞からの
ＡＵ２と化合物を形成してその大部分が除去される。一
方、供給ライン（８）には、ＡｓＨ３（気体）などのＡ
ｓ系結晶成長用祠料ａυが供給され、そして、このよう
に供給されたＡｓ系結晶成長用材料（１１）が供給ライ
ン（８）を流れる■■２などのキャリアカスに混合希釈
されて反応管（１）へと搬送される。A susceptor (5) is housed in the reaction tube (1), and a GaAs single crystal substrate (6) is placed on the susceptor (5). Furthermore, a Ga-based crystal growth material supply line (7) and an As-based crystal growth material supply line (8) are connected to the reaction tube (1). Supply line (
7) includes (CH3)3Ga, (C2Hs)sGa,
(C2H5) Ga-based crystal growth material such as 2GaCQ (
9) is supplied, and at the same time, AJ feed material Oq consisting of a compound containing single At or AU is supplied. The Ga-based crystal growth material (9) and A1 supply material (1) supplied to the supply line (7) in this way
It mixes with carrier gas such as H2 flowing through the reaction tube (1).
During this transportation, impurities contained in the Ga-based crystal growth material (9) form a compound with AU2 from the AC supply material (LL>, and most of it is removed. On the other hand, The supply line (8) contains A such as AsH3 (gas).
The abrasive material aυ for s-based crystal growth is supplied, and the thus supplied As-based crystal growth material (11) is mixed and diluted with carrier scum such as 2 flowing through the supply line (8), and reacts. It is conveyed to the tube (1).
以」二のような構成の装置ばにおいて反応管（１）に供
給されたＧａ系結晶成長用材料（９）およびＡｓ系結晶
ＴｒＳｃ長用材料αＩノは、高周波加熱コイル（２）に
より加熱されたサセプタ（５）」−で高温になったＧａ
Ａｓ単結晶基板（６）上で熱分解し、遊離したＧａおよ
びＡｓが結合してＧａＡｓエピタキシャル結晶層が形成
される。In the apparatus configured as described above, the Ga-based crystal growth material (9) and the As-based crystal TrSc length material αI supplied to the reaction tube (1) are heated by the high-frequency heating coil (2). Ga heated to high temperature in the susceptor (5)
Ga and As released by thermal decomposition on the As single crystal substrate (6) combine to form a GaAs epitaxial crystal layer.
そして、不要なガスは、反応管（１）の下部に設けたガ
ス出口Ｑ４を介して排出される。Then, unnecessary gas is discharged through a gas outlet Q4 provided at the bottom of the reaction tube (1).
Ｇａ系結晶成長用材料（９）として（ＣＨｓ）３Ｇａを
用い、Ａｓ系結晶成長用材料００としてＡｓ）Ｉ３を用
いて、以下の結晶成長条件下で、 Ａ９供給材料０１の
供給が有る場合とＪｊｉ（い場合のそれぞれについて、
厚さ約３μｍのＧａＡｓエピタキシャル結晶層をＧａＡ
ｓ単結晶基板（６）上に形成し、その特性を評価した。Using (CHs)3Ga as the Ga-based crystal growth material (9) and As)I3 as the As-based crystal growth material 00, under the following crystal growth conditions, when A9 supply material 01 is supplied. Jji (for each case,
A GaAs epitaxial crystal layer with a thickness of about 3 μm is made of GaAs.
s was formed on a single crystal substrate (6), and its characteristics were evaluated.
基板温度二６５０℃
結晶成長条件下０１μｍ／ｍ１ｎ
Ｇａ／Ａｓモル比：４５
全ガス流量：８Ａ／ｍｉｎ
なお、特性の評価は、電子ｓ度と移動度についててはｖ
ａｎ ｄｅｒ ｐａｕｗによるホール測定で行ない。Substrate temperature: 2650°C Crystal growth conditions: 01μm/m1n Ga/As molar ratio: 45 Total gas flow rate: 8A/min Note that the characteristics are evaluated using v for electron s degree and mobility.
Performed by hole measurement according to and der pauw.
フォトルミネッセンス強度（以下’ＰＬＰＬ強度略す）
については５１４５人、ＩＯＷ／ｄのＡｒレーザ励起に
より測定した。この測定結果を第１表に示す。Photoluminescence intensity (hereinafter abbreviated as 'PLPL intensity')
5145 people were measured using Ar laser excitation at IOW/d. The measurement results are shown in Table 1.
（以下余白〉
第 １ 表・
第１表の値は、それぞれの項目について各５０ツトづつ
の平均値を示しており、この結果から判るように、電子
温度についてはＡ１添加による差はほとんどないが、移
動度とＰＬ強度においては明らかな差がある。これは、
酸素や炭素などの不純物がＡ１と容易に化合物を形成し
て１反応管（１）に到達する前に除去されたことによる
と考えられる。(Margins below) Table 1 The values in Table 1 show the average value of 50 points for each item, and as can be seen from these results, there is almost no difference in electron temperature due to the addition of A1. , there is a clear difference in mobility and PL strength.
This is believed to be because impurities such as oxygen and carbon easily formed compounds with A1 and were removed before reaching the reaction tube (1).
Ａｆ供給材料０（夛の添加鼠は、それにより供給される
Ａｔが凹族元素、すなわち本実施例においてはＧａに対
してモル比で１チ未満になるようにしなければならない
。１係以玉添加すると、成長Ｇ ａ Ａ ｓエピタキシ
ャル結晶層中にＡＩが取り込まれ、ＧａＡｓ結晶中での
不純物散乱の原因となったの、或いはＧａＡｌＡｓ混晶
が成長し１合金散乱や空間電荷散乱、格子欠陥の生成等
を伴い、成長結晶ｊ―の移動度が著しく低下することが
確認されている。The addition of At to the Af feed material must be such that the At supplied thereby has a molar ratio of less than 1 to the concave group element, that is, Ga in this example. When added, AI was incorporated into the growing GaAs epitaxial crystal layer and caused impurity scattering in the GaAs crystal, or the GaAlAs mixed crystal grew and caused 1-alloy scattering, space charge scattering, and lattice defect formation. It has been confirmed that the mobility of the grown crystal j- decreases significantly as a result of the formation, etc.
本実施例では、アンド−ブトＧ’ａＡｓエピタキシャル
結晶について述べたが、結晶成長用材料としてＨ２Ｓｅ
、 Ｈ２Ｓ＋ （Ｃ２Ｈ３）３Ｚｎなどのｐ型またはｎ
型上−パン） （ｄｏｐａｎｔ ）材料を追加的に反応
管（１）へ供給して得られるｐ型又はｎ型ＧａＡｓエピ
タキシャル結晶についても同様に本発明を適用でき、同
様の効果が得られることが確認されている。In this example, an and-button G'aAs epitaxial crystal was described, but H2Se was used as a material for crystal growth.
, H2S+ p-type or n such as (C2H3)3Zn
The present invention can be similarly applied to p-type or n-type GaAs epitaxial crystals obtained by additionally supplying dopant material to the reaction tube (1), and similar effects can be obtained. Confirmed.
また、本実施例では、
（Ａ）Ａｆｆ供給材料叫全２Ｇａ系結晶成長用材料（９
）のキャリアガスにのせる方法５をとったが、（Ｂ）Ａ
Ｊ供給材料αりを、Ｇａ系結晶成長用材料（９）に直接
混合する方法、
（Ｃ）Ａｌ供給材料０１を、Ａｓ系結晶成長用材料αυ
に直接混合するか、或いはＡｓ系結晶成長用材料θυの
キャリアガスにのせる方法。In addition, in this example, (A) Aff supply material and total 2Ga-based crystal growth material (9
), but (B) A
(C) Method of directly mixing J supply material α into Ga-based crystal growth material (9); (C) Al supply material 01 is mixed directly into As-based crystal growth material αυ
or by placing it on a carrier gas of As-based crystal growth material θυ.
■）Ａｌ供給材料Ｏ４を、追加的結晶成長用材料として
のドーパント材料に直接混合するか、或いはドーパント
材料のキャリアガスにのせる方法。2) A method in which the Al feed material O4 is directly mixed with the dopant material as a material for additional crystal growth or is placed on the carrier gas of the dopant material.
＠玉記（Ａ）〜（至）の方法の２つ以上を同時に採用し
、全体としてｈｌの添加斌が■族元素のＧａに対してモ
ル比で１チ未満になるようにＡＬ供給材料（＋ＣＩを供
給する方法、のいずれの方法でも同様の効果を得ること
ができ、特に、 （Ｅ）の方法は、供給される全ての種
類の結晶成長用材料およびその供給ラインに付随する不
純物を取り除くことができるという意味で特に優れた効
果が得られるものである。@ Two or more of the methods from Yuki (A) to (to) are adopted simultaneously, and the AL supply material ( The same effect can be obtained by any method of supplying +CI, and in particular, method (E) removes all types of supplied crystal growth materials and impurities accompanying the supply line. This means that particularly excellent effects can be obtained.
なお、本実施例では、ｍ−ｖ族化合物半導体としてＧａ
Ａｓを例にとったが、ＩｎＰやＩｎＡｓ等の他のＩＩＩ
−Ｖ族化合物半導体についても本発明を適用できること
はいうまでもない。In this example, Ga is used as the m-v group compound semiconductor.
Although As is taken as an example, other III such as InP and InAs
It goes without saying that the present invention can also be applied to -V group compound semiconductors.
発明の詳細
な説明したように、本発明にがかる■−■族化合物半尋
体結晶成長方法では、結晶成長方法料が反応管に到達す
る前に、結晶成長用材料またはそのキャリアガスに、結
晶１ｊＺ長用材料における■族元素に対してモル汁で１
チ未満のＡ４を含むｈｌ供給材料を添加するようにしで
あるので１反応管に到達する前に不純物を除去すること
ができ、反応管内で成長形成される化合物半導体結晶に
不純物が侵入するのを防止することができるものである
。従って、本発明の結晶成長方法は、半導体レーザ、太
陽電池、ＦＥＴ、フォトダイオード、およびこれらを複
合化した光束回路などを作製する際の結晶成長方法とし
て有望なものである。As described in detail of the invention, in the method for growing a hemihybrid crystal of a ■-■ group compound according to the present invention, a crystal is added to the crystal growth material or its carrier gas before the crystal growth method material reaches the reaction tube. 1 molar juice for the group ■ element in the material for 1jZ length
Since the HL feed material containing less than 10% of A4 is added, impurities can be removed before they reach the reaction tube, and impurities can be prevented from entering the compound semiconductor crystals that are grown in the reaction tube. It is something that can be prevented. Therefore, the crystal growth method of the present invention is promising as a crystal growth method for producing semiconductor lasers, solar cells, FETs, photodiodes, and light flux circuits that combine these.
【図面の簡単な説明】
図面は本発明が適用されるＭＯＣＶＤ法を実施するため
の装置を示す概略構成図である。
（１）・・・反応管、（２）・・・高周波加熱コイル、
（５）・・・サセプタ、り６）・・・ＧａＡｓ単結晶基
板、（７） （Ｒ）・・・材料供給ライン、（９）・・
・Ｇａ系結晶成長用材料、αＱ・・・Ａ１．供給材料、
０１）・・・Ａｓ系結晶成長用材料代理人 森 本 義
弘BRIEF DESCRIPTION OF THE DRAWINGS The drawing is a schematic configuration diagram showing an apparatus for implementing the MOCVD method to which the present invention is applied. (1)...Reaction tube, (2)...High frequency heating coil,
(5)...Susceptor, 6)...GaAs single crystal substrate, (7) (R)...Material supply line, (9)...
- Ga-based crystal growth material, αQ...A1. feed materials,
01)...As-based crystal growth material agent Yoshihiro Morimoto
Claims (1)
用材料またはそのキャリアガスに、結晶成長用材料にお
ける損族元累に対してモル比で１ヂ未満のＡｊを含むＡ
ノ供給材料を添加することにより、反応管に到達する以
前に不純物をそのＡＪ化合物として除去した上で、反応
管内で結晶成長用材料から結晶成長させるようにした璽
−Ｖ族化合物半導体結晶成長方法。1. Before the crystal growth material reaches the reaction tube, the crystal growth material or its carrier gas contains A in a molar ratio of less than 1 to the loss group element in the crystal growth material.
A method for growing crystals of group V compound semiconductors, in which impurities are removed as AJ compounds before they reach the reaction tube by adding a supply material, and then crystals are grown from the crystal growth material in the reaction tube. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14621683A JPS6036395A (en) | 1983-08-09 | 1983-08-09 | Method for growing crystal of iii-v group compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14621683A JPS6036395A (en) | 1983-08-09 | 1983-08-09 | Method for growing crystal of iii-v group compound semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6036395A true JPS6036395A (en) | 1985-02-25 |
Family
ID=15402730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14621683A Pending JPS6036395A (en) | 1983-08-09 | 1983-08-09 | Method for growing crystal of iii-v group compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6036395A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4989541A (en) * | 1989-02-23 | 1991-02-05 | Nobuo Mikoshiba | Thin film forming apparatus |
-
1983
- 1983-08-09 JP JP14621683A patent/JPS6036395A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4989541A (en) * | 1989-02-23 | 1991-02-05 | Nobuo Mikoshiba | Thin film forming apparatus |
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