JPS6034633B2 - Plasma gas phase reactor - Google Patents
Plasma gas phase reactorInfo
- Publication number
- JPS6034633B2 JPS6034633B2 JP7649078A JP7649078A JPS6034633B2 JP S6034633 B2 JPS6034633 B2 JP S6034633B2 JP 7649078 A JP7649078 A JP 7649078A JP 7649078 A JP7649078 A JP 7649078A JP S6034633 B2 JPS6034633 B2 JP S6034633B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- phase reactor
- bell jar
- gas
- introduction pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
本発明は高周波プラズマ放電を利用して材料表面にナイ
トラィド膜などを形成させるようにしたプラズマ気相反
応装置の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a plasma vapor phase reactor that forms a nitride film or the like on the surface of a material using high-frequency plasma discharge.
従来のこの種の装置は、ベルジャ内において上下二枚の
電極板を対向せしめ、下部電極を接地に上部電極に高周
波電圧を印加し、上記両電極間に導入される反応ガスを
プラズマ化し、下部電極上に戦遣された、例えばシリコ
ンウェハ等の材料上にＳｉ３Ｎ４等のナイトラィドを形
成せしめるものである。Conventional devices of this type have two electrode plates, upper and lower, facing each other in a bell jar, the lower electrode is grounded, and a high-frequency voltage is applied to the upper electrode.The reactant gas introduced between the two electrodes is turned into plasma. Nitride such as Si3N4 is formed on a material such as a silicon wafer, which is placed on an electrode.
ところで上述の如きプラズマ気相反応装置においては、
ベルジャも接地電位におかれるため、上部電極とベルジ
ャとの間においてもプラズマが形成され、ベルジャ内面
にナイトラィド膜が形成され、それらが堆積してやがて
下部電極上にフレークとして落下し、ウェハ表面を汚損
することが多く見られる。このため時々ベルジャ内に例
えばＣＦ４等のガスを導入し、プラズマエッチングによ
りベルジャ内面のナイトラィドをクリーニングする必要
があった。しかし、従来の装置においては、上部電極上
方へのクリーニング用反応ガスの流通が少なく、最もフ
レーク汚損の原因となりやすいベルジャ頂部内面に被着
したナイトラィドを除去するために非常な長時間を要し
ていた。本発明は上述の如き従来装置の欠点をなくし、
短時間で効果的にベルジャ内の不要堆積物をエッチング
除去しうるプラズマ気相反応装置を提供する目的でなさ
れたもので、本発明の装置は上部電極とベルジャ上部と
の間隙部にも反応ガスを導入する手段を設けたことを特
徴とするものである。図は本発明の一実施例によるプラ
ズマ気相反応装置の概略縦断面図であり、この装置はベ
ルジャー内に対向して配置された上部電極２及び下部電
極３と、下部電極３の中央に開口し、ベルジャ１内に反
応ガスを供給する第１のガス導入管４と、排気系（図示
せず）に蓮通する排気管５と、上下両電極間に高周波電
界を生ぜしめる高周波電源６とからなるもので、ベルジ
ャ頂部中央部に第２の反応ガス導入管７を設けたことを
特徴とするものである。即ち、本装置を用いてシリコン
ナイトラィドを形成せしめる場合には、上記第２の反応
ガス導入管７を閉じ、第１のガス導管からのみ反応ガス
を導入する。By the way, in the plasma gas phase reactor as described above,
Since the bell jar is also placed at ground potential, plasma is also formed between the upper electrode and the bell jar, and a nitride film is formed on the inner surface of the bell jar.The film is deposited and eventually falls on the lower electrode as flakes, coating the wafer surface. It is often seen to be contaminated. For this reason, it is sometimes necessary to introduce a gas such as CF4 into the bell jar and to clean the nitride on the inner surface of the bell jar by plasma etching. However, in conventional equipment, the flow of the cleaning reaction gas above the upper electrode is limited, and it takes a very long time to remove the nitride deposited on the inner surface of the top of the bell jar, which is the most likely cause of flake contamination. Ta. The present invention eliminates the drawbacks of the conventional device as described above,
The purpose of this invention is to provide a plasma vapor phase reaction device that can effectively etch away unnecessary deposits inside the bell jar in a short period of time. This feature is characterized by providing a means for introducing. The figure is a schematic vertical cross-sectional view of a plasma gas phase reactor according to an embodiment of the present invention. A first gas introduction pipe 4 that supplies a reaction gas into the bell jar 1, an exhaust pipe 5 that passes through an exhaust system (not shown), and a high frequency power source 6 that generates a high frequency electric field between the upper and lower electrodes. It is characterized by a second reaction gas introduction pipe 7 provided at the center of the top of the bell jar. That is, when silicon nitride is formed using this apparatus, the second reaction gas introduction pipe 7 is closed and the reaction gas is introduced only from the first gas conduit.
そしてベルジャ内のクリーニング時には第１、第２のガ
ス導入管４および７の両方からプラズマエッチング用の
反応ガスを導入する。上述の如く本装置を運転してやれ
ば、ベルジャ内のクリーニング時にはベルジャ１の頂部
内面と上部電極２との間隙部においても十分な反応ガス
が供給され、ベルジャ頂部内面に被看した不要なナイト
ラィドも他の部分と同様の時間で効率良く除去すること
ができる。上述のような本発明によれば、フレークの落
下によるウェハ等の汚損不良の発生を効果的に防止する
ことができ、かつベルジヤ内のクリーニングに要する時
間も大幅に短縮されるため、装置の運転効率を飛躍的に
高めることができる。When cleaning the inside of the bell jar, a reaction gas for plasma etching is introduced from both the first and second gas introduction pipes 4 and 7. If this device is operated as described above, sufficient reactive gas will be supplied to the gap between the top inner surface of the bell jar 1 and the upper electrode 2 during cleaning of the bell jar, and unnecessary nitrides that have been observed on the top inner surface of the bell jar will be removed. can be efficiently removed in the same amount of time as the part. According to the present invention as described above, it is possible to effectively prevent the occurrence of contamination defects on wafers, etc. due to falling flakes, and the time required for cleaning the inside of the bell gear is also significantly shortened, so that it is possible to reduce the time required for operating the equipment. Efficiency can be dramatically increased.
図は本発明の一実施例によるプラズマ気相反応装置の概
略縦断面図である。
１・・・・・・ベルジャ、２・・・・・・上部電極、３
・・・・・・下部電極、４・・…・第１の反応ガス導入
管、５・・・・・・排気管、６・・・・・・高周波電源
、７・・・・・・第２の反応ガス導入管。The figure is a schematic vertical sectional view of a plasma vapor phase reactor according to an embodiment of the present invention. 1...bell jar, 2...upper electrode, 3
....Lower electrode, 4..First reaction gas introduction pipe, 5..Exhaust pipe, 6..High frequency power supply, 7.. No. 2 reaction gas introduction pipe.
Claims (1)
がベルジヤに連結しているベルジヤ内において、上部電
極と下部電板の二板の電極板を対向せしめ、上記両電極
間に高周波電圧を印加し、上記両電極間に第１のガス導
入管を通して導入された反応ガスをプラズマ化し、上記
電極間に置かれた材料表面に反応生成物を堆積させるよ
うに構成されたプラズマ気相反応装置において、上記ベ
ルジヤ上部内面と上部電極上面との空隙部にクリーニン
グ用の反応ガスを導入する手段である第２のガス導入管
をベルジヤ上部に設けたことを特徴とするプラズマ気相
反応装置。1 Inside the bell gear, in which the first gas introduction pipe for introducing the reaction gas into the bell gear is connected to the bell gear, two electrode plates, an upper electrode and a lower electric plate, are made to face each other, and a high frequency voltage is applied between the two electrodes. a plasma vapor phase reactor configured to apply a voltage to the reactant gas introduced between the two electrodes through the first gas introduction pipe, to turn it into plasma, and to deposit a reaction product on the surface of the material placed between the electrodes. A plasma vapor phase reaction device characterized in that a second gas introduction pipe, which is a means for introducing a cleaning reaction gas into the gap between the inner surface of the upper part of the bell gear and the upper surface of the upper electrode, is provided in the upper part of the bell gear.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7649078A JPS6034633B2 (en) | 1978-06-26 | 1978-06-26 | Plasma gas phase reactor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7649078A JPS6034633B2 (en) | 1978-06-26 | 1978-06-26 | Plasma gas phase reactor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS556410A JPS556410A (en) | 1980-01-17 |
| JPS6034633B2 true JPS6034633B2 (en) | 1985-08-09 |
Family
ID=13606651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7649078A Expired JPS6034633B2 (en) | 1978-06-26 | 1978-06-26 | Plasma gas phase reactor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6034633B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0351971Y2 (en) * | 1988-05-12 | 1991-11-08 | ||
| JPH0673348B2 (en) * | 1991-06-14 | 1994-09-14 | 株式会社半導体エネルギー研究所 | Cleaning method for plasma processing apparatus |
| DE4202821C2 (en) * | 1992-01-31 | 1995-01-26 | S Rockstedt Gmbh Maschf | Multi-shaft continuously working mixing and kneading machine for plasticizable masses |
| DE4338795C1 (en) * | 1993-11-12 | 1995-06-14 | S Rockstedt Gmbh Maschf | Multi-shaft continuously operating mixing machine for plasticizable masses |
-
1978
- 1978-06-26 JP JP7649078A patent/JPS6034633B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS556410A (en) | 1980-01-17 |
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