JPS6033296B2 - Manufacturing method of solid electrolytic capacitor - Google Patents
Manufacturing method of solid electrolytic capacitorInfo
- Publication number
- JPS6033296B2 JPS6033296B2 JP54050647A JP5064779A JPS6033296B2 JP S6033296 B2 JPS6033296 B2 JP S6033296B2 JP 54050647 A JP54050647 A JP 54050647A JP 5064779 A JP5064779 A JP 5064779A JP S6033296 B2 JPS6033296 B2 JP S6033296B2
- Authority
- JP
- Japan
- Prior art keywords
- anode
- anode body
- anode lead
- lead
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
【発明の詳細な説明】
本発明は固体電解コンデンサの製造方法に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a solid electrolytic capacitor.
一般に、この種のコンデンサは例えば第１図に示すよう
にタンタル、ニオブ、アルミニウムなどのように弁作用
を有する金属粉末を円柱状に加圧成形し焼結してなる陽
極体１に予め弁作用を有する金属線を陽極リード２とし
て楢立し、この陽極リード２の突出部分にＬ形に屈曲さ
れた第１の外部リード線３を溶接すると共に、第２の外
部リード線４を陽極体１の周面に酸化層、半導体層を介
して形成された陰極層に半田付けし、陽極リード２の突
出部を含む陽極体１の周面を樹脂材５にて被覆して構成
されている。Generally, as shown in FIG. 1, this type of capacitor is made by press-molding metal powder such as tantalum, niobium, or aluminum into a cylindrical shape and sintering the anode body 1. As shown in FIG. A metal wire having the following properties is erected as the anode lead 2, a first external lead wire 3 bent in an L shape is welded to the protruding portion of the anode lead 2, and a second external lead wire 4 is connected to the anode body 1. is soldered to a cathode layer formed on the circumferential surface of the anode body 1 via an oxide layer and a semiconductor layer, and the circumferential surface of the anode body 1 including the protruding portion of the anode lead 2 is covered with a resin material 5.
ところで、陽極体１は陽極リード２の突出部分に第１の
外部リード線３を溶接するに先立って、陽極リード２と
共に電解酸化され、さらに陽極体１のみを硝酸マンガン
溶液などの半導体母液に一定時間浸潰し陽極体１内に含
浸させ、次いで２００℃以上の高温雰囲気中において熱
分解反応を起こさせ、陽極体１の酸化層上に二酸化マン
ガンなどの半導体層が形成されている。Incidentally, prior to welding the first external lead wire 3 to the protruding portion of the anode lead 2, the anode body 1 is electrolytically oxidized together with the anode lead 2, and further, only the anode body 1 is immersed in a semiconductor mother solution such as manganese nitrate solution. A semiconductor layer such as manganese dioxide is formed on the oxidized layer of the anode body 1 by impregnating it into the anode body 1 for a time and then causing a thermal decomposition reaction in a high temperature atmosphere of 200° C. or higher.
しかし乍ら、この熱分解工程において、高温雰囲気中に
挿入された陽極体１はそれ自身の温度が急激に上昇し、
内部に含浸された半導体母液が熱分解反応を起し内部よ
り水蒸気・窒素酸化物などの分解ガスが表面層に吹き出
してくるために、表面層における熱分解途中の半導体母
液層に気泡が生じ、これが陽極リード′２の突出部分に
付着していわゆる半導体層形成部村の這い上がりを生ず
る。However, in this thermal decomposition process, the temperature of the anode body 1 inserted into the high-temperature atmosphere rises rapidly.
The semiconductor mother liquor impregnated inside causes a thermal decomposition reaction and decomposed gases such as water vapor and nitrogen oxides blow out from the inside to the surface layer, so bubbles are generated in the semiconductor mother liquor layer in the middle of thermal decomposition in the surface layer. This adheres to the protruding portion of the anode lead '2, causing what is called a creeping up of the semiconductor layer formation area.
通常、半導体母液の含浸−熱分解工程は、陽極体１が多
孔質であることに鑑み、数回以上繰り返えされるが、熱
分解回数の増加によって半導体層形成部分の這い上りも
さらに進行する傾向にある。従って、陽極リード２の突
出部分に第１の外部リード線３を溶接する際、第１の外
部リード線３と這い上った半導体層とが接触して陰極と
が短絡されてしまい、コンデンサとしての機能を奏しえ
なくなるという問題がある。Normally, the impregnation-pyrolysis process of the semiconductor mother liquor is repeated several times or more in view of the porous nature of the anode body 1, but as the number of times of pyrolysis increases, the creeping up of the semiconductor layer forming portion progresses further. There is a tendency. Therefore, when welding the first external lead wire 3 to the protruding portion of the anode lead 2, the first external lead wire 3 and the semiconductor layer that has climbed up come into contact and short-circuit with the cathode, resulting in the capacitor not functioning as a capacitor. There is a problem that the function of the device cannot be performed.
それ故、従来にあっては第２図及び第３図に示すように
陽極体１の頂面部に弗素系樹脂製のワッシャ６を、その
中心孔７に陽極リード２を挿適するようにして装着した
構成が採用されている。しかしながら、この方法によれ
ば、陽極リード２の突出部分における半導体層の這い上
り現象は効果的に抑制することができる反面、弗素系樹
脂ワッシャ６を一個一個作業者が手作業で陽極リード２
に挿入せしめる必要があるため、作業性が悪く、しかも
、きわめて多大の作業工数を要するために量産性に乏し
いという欠点がある。本発明は、上記の欠点に鑑み、自
動化が可能で、作業性の向上を図り得る固体電解コンデ
ンサの製造方法を提供せんとするものである。Therefore, conventionally, as shown in FIGS. 2 and 3, a washer 6 made of fluorine resin is attached to the top surface of the anode body 1, and an anode lead 2 is inserted into the center hole 7 of the washer 6. A configuration has been adopted. However, according to this method, although the creeping-up phenomenon of the semiconductor layer at the protruding portion of the anode lead 2 can be effectively suppressed, an operator manually attaches each fluorine-based resin washer 6 to the anode lead 2.
This has the drawback of poor workability and poor mass productivity since it requires an extremely large number of man-hours. In view of the above-mentioned drawbacks, the present invention aims to provide a method for manufacturing a solid electrolytic capacitor that can be automated and improve workability.
即ち、本発明は、陽極体に半導体母液を被着させるに先
立って、陽極体が上方に、陽極リードが下方に位置する
ように配置した上で、陽極体より導出された陽極リード
に、陽極体の端面から所定の間隔を隔てて耐熱性を髪水
性を有する所定の微粉末を分散させた分散液を被着し、
これを加熱処理して上記陽極リード‘こ被膜を形成し、
この被膜によりいわゆる半導体層形成部材の這い上りを
防止する様にしたものである。That is, in the present invention, prior to depositing the semiconductor mother liquor on the anode body, the anode body is arranged so that the anode body is located above and the anode lead is positioned below, and then the anode is placed on the anode lead led out from the anode body. A dispersion of heat-resistant and water-soluble fine powder is applied at a predetermined distance from the end surface of the body,
This is heat-treated to form the above-mentioned anode lead coating.
This coating prevents the so-called semiconductor layer forming member from creeping up.
第４図は上記被膜を形成する装置の一具体例を示したも
ので、同図において、１１は陽極リード１２を楢立させ
た陽極体で、これには、硝酸マンガン溶液などの半導体
母液は含浸されていない。FIG. 4 shows a specific example of the apparatus for forming the above-mentioned film. In the figure, 11 is an anode body with an anode lead 12 erected, and a semiconductor mother solution such as a manganese nitrate solution is used in this anode body. Not impregnated.
１３は陽極体１１は多数起立固定した金属板よりなるホ
ルダーで、これは、適当な手段で作業工程を移送せしめ
られる。Reference numeral 13 denotes a holder consisting of a metal plate on which a large number of anode bodies 11 are fixed in an upright manner, and the work process is transferred to this holder by an appropriate means.
１４，１４はホルダー１３の移送途上において適当な手
段で吊り下げ状に且つホルダー１３の移送方向との直交
方向に所定の間隔を隔てて支持した一対のモータ、１５
，１５はモータ１４，１４より下方に垂下させた回転軸
、１６，１６は、第５図にも示す如く陽極体１１に楯立
した陽極リード１２が通過しうる間隔が形成される様に
、上記回転軸１５，１５に夫々軸支させた所定肉厚の回
転体で、これは、吸水性のあるスポンジ等をその素材と
して使用し、上下方向及び幅方向に位置調整可能に構成
する。Reference numerals 14 and 14 indicate a pair of motors 15 supported in a suspended manner and at a predetermined interval in a direction orthogonal to the direction in which the holder 13 is being transported by appropriate means;
, 15 are rotary shafts hanging below the motors 14, 14, and 16, 16 are rotary shafts so as to form an interval through which the anode lead 12 standing on the anode body 11 can pass, as shown in FIG. This is a rotating body of a predetermined thickness that is supported by the rotating shafts 15, 15, respectively, and is made of water-absorbing sponge or the like as its material, and is configured so that its position can be adjusted in the vertical direction and the width direction.
そして、この回転体１６，１６に、例えば０．３ミクロ
ン程度の綾水性を有し且つ耐熱性、溌水性を有する弗素
系樹脂の微粒子を水中に約６肌ｔ％分散し且つ表面活性
剤で安定させた分散液を適当な手段で連続的に含浸させ
る。尚、弗素系樹脂の微粒子は０．２〜４０山ｍ程度の
範囲が好適する。そうして、陽極体１１に半導体母液を
被着させるに先だって、次の要領で第６図の如く陽極リ
ード１２の突出部分に被膜１７に形成する。即ち、上記
回転体１６，１６を、陽極体１１の端面１１′から所定
の間隔（０．２〜２．０肌程度）を隔てた位置に保持さ
れる様に予め位置調整した後、上記モータ１４，１４を
適当な手段で回転させ、回転体１６，１６を図示矢印方
向に回転させると同時に、陽極体１１を多数起立固定し
たホルダー１３を図示矢印方向に移送させ、この移送途
上で上記陽極リード線１２を回転体１６，１６間に通過
せしめる。すると、その通過時、陽極リード１２は回転
せる一対の回転体１６，１６に接触し、これにより、当
該回転体１６，１６に含浸された分散液が、陽極体１１
の端面１１′から所定の間隔を隔てた位置において陽極
リード１２に塗布される。しかる後、この塗布された分
散液を加熱処理して、第６図の如く陽極リード１２に被
膜１７を形成する。こうして陽極リード１２に被膜１７
を形成した後、電解液中にて化成して酸化層を形成し半
導体母液に浸債後熱分解反応を起こさせ、陽極体１１の
酸化層上に二酸化マンガンなどの半導体層を形成する。
この熱分解工程において、前述した様に、陽極体１１の
表面に半導体母液層の気泡が生じ、これが陽極リード１
２の突出部分に付着していわゆる半導体層形成部材の這
い上りを生じるところ、上記の如く陽極リード１２には
被膜１７が形成してあるので、半導体層形成部材の這い
上りはこの被膜１７によって防止される。そして、この
被膜１７は、陽極リード１２の突出部分に外部リード線
を溶接するとき、陽極リード１２より取り去る。尚、被
膜１７は除去しなくてもよい。このようにして陽極リー
ド１２に被膜１７を形成して処理した陽極体１１を用い
、通常の方法によって団体電解コンデンサを２００個製
作したところ、次の様な結果を得た。その結果を被膜１
７を形成しなかった禾処理の陽極体を用いて２００個製
作したものと対比して示す。尚、表中の不良率は壷男馨
Ｘ１皿で算出した。尚、この実施例において、被膜１７
は陽極体１１が上方に、陽極リード１２が下方に位置す
るように配置した上で、陽極体より離隔した陽極リード
部分に形成されているが、これは分散液を陽極リード１
２に被着した際に陽極体１１の端面にも被着されると、
半導体母液の含浸性が阻害され所望の特性が得られなく
なるためである。Then, in the rotating bodies 16, 16, about 6 t% of fine particles of a fluorine-based resin having a water resistance of about 0.3 microns, heat resistance, and water repellency are dispersed in water, and a surface active agent is applied. The stabilized dispersion is continuously impregnated by suitable means. The fine particles of the fluorine-based resin preferably have a diameter of about 0.2 to 40 m. Before applying the semiconductor mother liquid to the anode body 11, a coating 17 is formed on the protruding portion of the anode lead 12 as shown in FIG. 6 in the following manner. That is, after adjusting the positions of the rotating bodies 16, 16 in advance so that they are held at a predetermined distance (approximately 0.2 to 2.0 inches) from the end surface 11' of the anode body 11, the motor 14, 14 by an appropriate means, and the rotating bodies 16, 16 are rotated in the direction of the arrow shown in the figure.At the same time, the holder 13, on which a large number of anode bodies 11 are erected and fixed, is transferred in the direction of the arrow shown in the figure. The lead wire 12 is passed between the rotating bodies 16, 16. Then, during the passage, the anode lead 12 comes into contact with a pair of rotating bodies 16, 16, which allows the dispersion liquid impregnated in the rotating bodies 16, 16 to flow into the anode body 11.
It is applied to the anode lead 12 at a predetermined distance from the end surface 11' of the anode lead 12. Thereafter, the applied dispersion is heat-treated to form a coating 17 on the anode lead 12 as shown in FIG. In this way, the coating 17 is applied to the anode lead 12.
After forming, an oxide layer is formed by chemical conversion in an electrolytic solution, and a thermal decomposition reaction is caused in the semiconductor mother liquor after bonding, thereby forming a semiconductor layer of manganese dioxide or the like on the oxide layer of the anode body 11.
In this thermal decomposition process, as described above, bubbles are generated in the semiconductor mother liquid layer on the surface of the anode body 11, and these bubbles are formed in the anode lead 1.
As described above, since the coating 17 is formed on the anode lead 12, this coating 17 prevents the semiconductor layer forming member from creeping up when it adheres to the protruding portion of the anode lead 12. be done. This coating 17 is removed from the anode lead 12 when an external lead wire is welded to the protruding portion of the anode lead 12. Note that the coating 17 does not need to be removed. Using the anode body 11 treated by forming the film 17 on the anode lead 12 in this manner, 200 group electrolytic capacitors were manufactured by a conventional method, and the following results were obtained. The result is film 1
This is shown in comparison with 200 pieces manufactured using a hardened anode body in which No. 7 was not formed. Incidentally, the defective rate in the table was calculated using 1 dish of Kaoru Tsuboyo. In addition, in this example, the coating 17
is arranged so that the anode body 11 is located above and the anode lead 12 is located below, and is formed on the anode lead part that is spaced apart from the anode body.
When it is deposited on the end face of the anode body 11 when it is deposited on the anode body 11,
This is because the impregnating properties of the semiconductor mother liquor are inhibited and desired characteristics cannot be obtained.
又、分散液に微粉末が分散されているので、仮に上述の
配置状態で誤って陽極体１１の端面１１′に分散液が付
着しても、微粉末成分の内部への侵入を防止でき所望の
特性を得ることができる。第７図及び第８図は本発明に
使用する装置の他の具体例を示したもので、ホルダー１
３の移送途上の所定位置の両側対称位置にベークライト
板等よりなる板材１８を起立させて側方に移動可能に配
置し、こ板材１８の上端部に沿って吸水性のあるスポン
ジ等の部材１９を貼着する。In addition, since the fine powder is dispersed in the dispersion liquid, even if the dispersion liquid accidentally adheres to the end surface 11' of the anode body 11 in the above arrangement, it is possible to prevent the fine powder components from entering the inside of the anode body 11 as desired. characteristics can be obtained. Figures 7 and 8 show other specific examples of the device used in the present invention.
A plate material 18 made of a Bakelite plate or the like is placed upright and movable laterally at a predetermined position symmetrical to both sides of a predetermined position during the transfer of the material 3, and a member 19 such as a water absorbent sponge is placed along the upper end of the plate material 18. Paste.
そして、この部材１９に前述した分散液を含浸させ、陽
極体１１の通過時に、部材１９を両側より陽極リード１
２に圧接して分散液を塗布する。被膜１７を形成する要
領は上記実施例と同じである。尚、上記の実施例では、
被膜１７は分散液を用いて形成したが、本発明はこれに
限定されるわけではなく、ガラスフリツトの他、ェポキ
シ等の各種樹脂粉末の分散液を用いて形成することもで
きる。Then, this member 19 is impregnated with the above-described dispersion liquid, and when passing through the anode body 11, the member 19 is inserted into the anode lead 1 from both sides.
2 to apply the dispersion liquid. The procedure for forming the coating 17 is the same as in the above embodiment. In addition, in the above example,
Although the coating 17 is formed using a dispersion liquid, the present invention is not limited thereto, and can also be formed using a dispersion liquid of various resin powders such as epoxy or the like in addition to glass frit.
又、陽極リードは陽極体の周面に溶接して導出すること
もできる。以上説明したように、本発明によれば、陽極
リードへの半導体形成部村の這い上り現象を完全に防止
することができる。Alternatively, the anode lead can be welded to the circumferential surface of the anode body. As described above, according to the present invention, it is possible to completely prevent the phenomenon of the semiconductor forming portion creeping up onto the anode lead.
また、分散液の陽極リードへの被着は陽極体が上方に、
陽極リードが下方に位置するように配置した状態で行わ
れるので、分散液の陽極体への付着を抑制できるし、仮
に付着しても別粉末の分散液であるために、微粉末の陽
極体内部への侵入を防止でき、特性劣化を防止できる。
さらには被膜形成の自動化が可能であり、大幅な作業性
の向上を図ることができる。In addition, the dispersion should adhere to the anode lead with the anode body facing upward.
Since the process is performed with the anode lead positioned at the bottom, it is possible to suppress the adhesion of the dispersion liquid to the anode body, and even if it does adhere, the dispersion liquid is of a different powder, so it is possible to prevent the dispersion liquid from adhering to the anode body. It can prevent intrusion into the interior and prevent characteristic deterioration.
Furthermore, it is possible to automate film formation, and work efficiency can be greatly improved.
第１図及び第２図は従来例の夫々異なった実施例を示す
正面断面図、第３図は第２図の要部分解斜視図である。
第４図は本発明に使用する装置の具体例を示した説明図
、第５図はその要部説明図、第６図は被膜を形成した陽
極体の説明図、第７図及び第８図は本発明に使用する装
置の他の具体例を示した説明図である。１１・・・・・
・陽極体、１２・・・・・・陽極リード、１７・・・・
・・被膜。
第１図
第２図
第３図
第５図
第６図
第７図
第８図
第４図1 and 2 are front sectional views showing different embodiments of the conventional example, and FIG. 3 is an exploded perspective view of the main part of FIG. 2. Fig. 4 is an explanatory diagram showing a specific example of the apparatus used in the present invention, Fig. 5 is an explanatory diagram of the main part thereof, Fig. 6 is an explanatory diagram of the anode body on which a film is formed, Figs. 7 and 8. FIG. 2 is an explanatory diagram showing another specific example of the device used in the present invention. 11...
・Anode body, 12...Anode lead, 17...
...Coating. Figure 1 Figure 2 Figure 3 Figure 5 Figure 6 Figure 7 Figure 8 Figure 4
Claims (1)
体が上方に、陽極リードが下方に位置するように配置し
た上で、陽極体より導出された陽極リードに、陽極体の
端面から所定の間隔を隔てて耐熱性、揆水性を有する所
定の微粉末を分散させた散液を被着し、これを加熱処理
して上記陽極リードに被膜を形成することを特徴とする
固体電解コンデンサの製造方法。1. Prior to depositing the semiconductor mother liquid on the anode body, the anode body is arranged so that the anode body is located above and the anode lead is positioned below, and then the anode lead led out from the anode body is coated with a predetermined amount from the end face of the anode body. A solid electrolytic capacitor characterized in that a dispersion of a predetermined heat-resistant and water-repellent fine powder dispersed therein is deposited at intervals of Production method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54050647A JPS6033296B2 (en) | 1979-04-23 | 1979-04-23 | Manufacturing method of solid electrolytic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54050647A JPS6033296B2 (en) | 1979-04-23 | 1979-04-23 | Manufacturing method of solid electrolytic capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55141724A JPS55141724A (en) | 1980-11-05 |
| JPS6033296B2 true JPS6033296B2 (en) | 1985-08-02 |
Family
ID=12864725
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54050647A Expired JPS6033296B2 (en) | 1979-04-23 | 1979-04-23 | Manufacturing method of solid electrolytic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6033296B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59135715A (en) * | 1983-01-24 | 1984-08-04 | 日本電気ホームエレクトロニクス株式会社 | Method of producing solid electrolytic condenser |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3967000A (en) * | 1974-06-13 | 1976-06-29 | P. R. Mallory & Co., Inc. | Riser protection for anodes |
| JPS5218741A (en) * | 1975-07-31 | 1977-02-12 | Du Pont | Fluorocarbon primer composite |
| DE2722899A1 (en) * | 1977-05-20 | 1978-11-23 | Siemens Ag | METHOD OF MANUFACTURING A FIXED ELECTROLYTE CONDENSER |
-
1979
- 1979-04-23 JP JP54050647A patent/JPS6033296B2/en not_active Expired
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3967000A (en) * | 1974-06-13 | 1976-06-29 | P. R. Mallory & Co., Inc. | Riser protection for anodes |
| JPS5218741A (en) * | 1975-07-31 | 1977-02-12 | Du Pont | Fluorocarbon primer composite |
| DE2722899A1 (en) * | 1977-05-20 | 1978-11-23 | Siemens Ag | METHOD OF MANUFACTURING A FIXED ELECTROLYTE CONDENSER |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55141724A (en) | 1980-11-05 |
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