JPS60260393A - Optical processing of light-transmitting conductive film - Google Patents
Optical processing of light-transmitting conductive filmInfo
- Publication number
- JPS60260393A JPS60260393A JP59117539A JP11753984A JPS60260393A JP S60260393 A JPS60260393 A JP S60260393A JP 59117539 A JP59117539 A JP 59117539A JP 11753984 A JP11753984 A JP 11753984A JP S60260393 A JPS60260393 A JP S60260393A
- Authority
- JP
- Japan
- Prior art keywords
- light
- conductive film
- wavelength
- optical processing
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/24—Ablative recording, e.g. by burning marks; Spark recording
Abstract
Description
【発明の詳細な説明】
ｒ産業上の利用分野Ｊ
本発明は太陽電池、液晶表示パネル等に用いられる透光
性導電膜の光による選択加工法に関する。DETAILED DESCRIPTION OF THE INVENTION r Industrial Field of Application J The present invention relates to a selective processing method using light for transparent conductive films used in solar cells, liquid crystal display panels, etc.
「従来技術」
透光性導電膜の光加工に関しては、レーザ加工技術とし
てＹＡＧレーザ′光（波長１．０５μ）が主として用い
られている。"Prior Art" Regarding optical processing of transparent conductive films, YAG laser' light (wavelength: 1.05 μm) is mainly used as a laser processing technique.
この波長によるレーザ加工方法においては、その光学的
エネルギが１ 、２３ｅＶであるため、透光性導電膜（
以下ＣＴＦという）である一般な３〜４ｅＶの光学的エ
ネルギバンド巾を有する酸化スズ、酸化インジューム（
ＩＴＯを含む）に対して十分な光吸収性を有していない
。このためレーザ加工の際、Ｑスイッチパルス光は平均
０．５〜ＩＷ（光）１５０μ、焦点距離４０ｎｍ、パル
ス周波数３ＫＨｚ、パルス巾６０ｎ秒の場合）の強い光
エネルギを加えて加工しなければならない。その結果、
このレーザ光によりＣＴＦ −の加工は行い得るが、同
時にその下側に設けられた基板例えばガラス基板に対し
てマイクロクラックを発生させてしまった。In the laser processing method using this wavelength, the optical energy is 1.23 eV, so the transparent conductive film (
Tin oxide and indium oxide (hereinafter referred to as CTF) have a general optical energy band width of 3 to 4 eV.
(including ITO). For this reason, during laser processing, it is necessary to apply strong optical energy to the Q-switch pulsed light (with an average of 0.5 to IW (light) 150 μ, focal length 40 nm, pulse frequency 3 KHz, pulse width 60 ns). . the result,
Although CTF- can be processed using this laser beam, microcracks are generated in the substrate provided below, for example, a glass substrate.
「発明の解決しようとする問題Ｊ
このＹＡＧ レーザを用いた加工での下地基板の微小ク
ラックは、レーザ光の円周と類似の形状を有し、「鱗」
状に作られてしまった。"Problem to be Solved by the Invention J" Microcracks in the base substrate produced by processing using this YAG laser have a shape similar to the circumference of the laser beam, and are called "scales".
It was made into a shape.
更に、１〜５μ巾の微細パターンを多数同一平面に選択
的に形成させることかまった（不可能であった。さらに
照射後、加工部のＣＴＦ材料が十分に微粉末化していな
いため、ＣＴＦのエツチング溶液（弗化水素系溶液）に
よりエツチングを行わなければならなかった。Furthermore, it was difficult (and impossible) to selectively form a large number of fine patterns with a width of 1 to 5 microns on the same plane.Furthermore, after irradiation, the CTF material in the processed area was not sufficiently pulverized. Etching had to be performed with an etching solution (hydrogen fluoride solution).
ｒ問題を解決するための手段」
本発明は、上記の問題を解決するものであり、その照射
光として、４００ｎｍ以下（エネルギ的には３、１ｅＶ
以上）の波長のパルスレーザを照射し、それをこの波長
を透光する石英好ましくは合成石英に非昇華性金属また
は有機被膜を選択的に形成したガラスマスクを透過して
照射することにより１〜５μ中の微細パターンをレジス
トを用いることなく選択加工することが可能となった。The present invention solves the above problem, and uses irradiation light of 400 nm or less (in terms of energy, 3.1 eV).
By irradiating a pulsed laser with a wavelength of It has become possible to selectively process fine patterns within 5μ without using a resist.
「作用」
結果として下地のガラス板に対し何等の損傷なしにＣＴ
Ｆの微細パターンの選択除去が可能となり、さらにアル
コール、アセトン等の洗浄液による超音波洗浄で十分と
なった。``Action'' As a result, CT can be performed without any damage to the underlying glass plate.
It became possible to selectively remove fine patterns of F, and ultrasonic cleaning using a cleaning solution such as alcohol or acetone was sufficient.
「実施例１」
基板として厚さ１．１ｍｍのガラス基板（１）を用いて
、この上面に弗素またはアンチモンが添加されている酸
化スズのＣＴＦ （２）を０．３ μの厚さに第１図（
Ａ）に示す如く形成させた。"Example 1" A glass substrate (1) with a thickness of 1.1 mm is used as a substrate, and a tin oxide CTF (2) doped with fluorine or antimony is coated on the upper surface to a thickness of 0.3 μm. Figure 1 (
It was formed as shown in A).
かかる被加工面を有する基板に対し、４００ｎｍ以下の
波長の発光用のレーザ光源としてエキシマレーザ（Ｑｕ
ｅｓｔｅｃ Ｉｎｃ、製）を用いた。For a substrate having such a surface to be processed, an excimer laser (Qu
estec Inc.) was used.
パルス光はＫｒＦを用いた２４８ｎｍとした。The pulsed light was 248 nm using KrF.
゛マスクは合成石英（４）にニッケル（５）を１５００
人の厚さに選択的に形成したものを用いた。゛Mask is made of synthetic quartz (4) with 1500 nickel (5)
A material selectively formed to the thickness of a human was used.
パルス巾２Ｏｎ秒、繰り返し周波数５０Ｈｚ、平均出力
１７Ｗ／１６ Ｘ ２０ｍｍとした。これ以上の面積に
おいては、この大きさを繰り返し移動させつつ照射した
。The pulse width was 2 On seconds, the repetition frequency was 50 Hz, and the average output was 17 W/16 x 20 mm. For areas larger than this, irradiation was performed while repeatedly moving this size.
するとこの酸化スズは１つのパルス光の照射で被照射面
（３）が完全に白濁化し、ＣＴＦが微粉末になった。こ
れをアセトン水溶液にて超音波洗浄（周波数２９ＫＨｚ
）を約１〜１０分し、このＣＴＦを除去した。下地のソ
ーダガラスはまったく損傷を受けていなかった。パター
ンとして３μ中のパターンをぬくことが可能であった。When this tin oxide was irradiated with one pulsed light, the irradiated surface (3) completely became cloudy, and the CTF became a fine powder. This was ultrasonically cleaned with an acetone aqueous solution (frequency 29KHz).
) for about 1 to 10 minutes, and the CTF was removed. The underlying soda glass was completely undamaged. It was possible to cut out a pattern within 3μ.
「実施例２」
水素または弗素が添加された非単結晶半導体（主成分珪
素）（第１図（Ａ）（１）上にＩＴＯ（酸化スズが５重
量％添加された酸化インジュ−ム）（２）をｉｏｏ。"Example 2" ITO (indium oxide to which 5% by weight of tin oxide was added) ( 2) ioo.
人の厚さに電子ビーム蒸着法によって形成し被加工面と
した。It was formed to a human thickness by electron beam evaporation and used as the surface to be processed.
さらにこの面上に第１図（Ｂ）に示す如く、マスクを合
成石英にポリイミドの有機樹脂（５）を選択的に形成し
てマスクを配設した。このマスクと基板とは１〜１０μ
の間隔をあけた。さらにここを真空下（真空度１０−
’ ｔｏｒｒ以下）として４００ｎｍ以下の波長のパル
ス光を加えた。波長は３５１ｎｍ（ＸｅＦ）とした。パ
ルス巾２Ｏｎ秒、平均出力２０Ｗ／１６ Ｘ ２０ｍｍ
”とした。すると被加工面のＩＴＯは昇華し下地の半導
体は損傷することなく微細パターンを形成せしめ残った
１７０間を絶縁化することができた。Furthermore, as shown in FIG. 1(B), a mask was provided on this surface by selectively forming a polyimide organic resin (5) on synthetic quartz. This mask and substrate are 1 to 10μ
spaced apart. Furthermore, this is under vacuum (degree of vacuum 10-
'torr or less), pulsed light with a wavelength of 400 nm or less was applied. The wavelength was 351 nm (XeF). Pulse width 2On seconds, average output 20W/16 x 20mm
Then, the ITO on the surface to be processed sublimated, forming a fine pattern without damaging the underlying semiconductor, and insulating the remaining 170 mm.
かかるパターンは液晶表示装置における電極形成にきわ
めて好都合であった。Such a pattern is extremely convenient for forming electrodes in liquid crystal display devices.
第１図は本発明の作製方法を示す。 特許出願人 ！ ３ 竿 （Ａ） （ｂン ０ FIG. 1 shows the manufacturing method of the present invention. patent applicant ! 3 Pole (A) (b-n 0
Claims (1)
ｍ以下の波長の光を透過させない被膜の形成された透光
性マスクを通して前記４’ＯＯｎｍ以下の波長のパルス
レーザ光を照射して前記導電膜を選択的に除去すること
を特徴とした透光性導電膜の光加工方法。 ２、特許請求の範囲第１項において、透光性導電膜は１
μ以下の厚さを有する酸化スズまたは酸化インジューム
を主成分としたことを特徴とした透光性導電膜の光加工
方法。 ３、特許請求の範囲第１項において、４００ｎｍ以下の
波長のレーザ光はエキシマレーザが用いられたことを特
徴とした透光性導電膜の光加工方法。 ４、特許請求の範囲第１項において、パルス光の照射の
後、洗浄溶液にて超音波洗浄を行うことを特徴とした透
光性導電膜の光加工方法。 ５、特許請求の範囲第１項において、透光性マスクは石
英ガラスに非昇華性金属または有機樹脂膜が透光しない
領域に設けられていることを特徴とする透光性導電膜の
光加工方法。[Claims] 1. 400 nm selectively applied to one main surface of the transparent conductive film on the substrate
A light-transmitting device characterized in that the conductive film is selectively removed by irradiating the pulsed laser beam with a wavelength of 4'OOnm or less through a light-transmitting mask formed with a film that does not transmit light with a wavelength of 4'OOnm or less. Optical processing method for conductive films. 2. In claim 1, the transparent conductive film is 1
1. A method for optical processing of a translucent conductive film, characterized in that the main component is tin oxide or indium oxide having a thickness of μ or less. 3. The optical processing method for a transparent conductive film according to claim 1, wherein an excimer laser is used as the laser beam having a wavelength of 400 nm or less. 4. The optical processing method for a transparent conductive film according to claim 1, characterized in that after irradiation with pulsed light, ultrasonic cleaning is performed using a cleaning solution. 5. The optical processing of a transparent conductive film according to claim 1, characterized in that the transparent mask is provided on quartz glass with a non-sublimable metal or organic resin film in an area where no light is transmitted. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59117539A JPS60260393A (en) | 1984-06-08 | 1984-06-08 | Optical processing of light-transmitting conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59117539A JPS60260393A (en) | 1984-06-08 | 1984-06-08 | Optical processing of light-transmitting conductive film |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4193006A Division JPH05196949A (en) | 1992-06-26 | 1992-06-26 | Photoprocessing method for fine pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60260393A true JPS60260393A (en) | 1985-12-23 |
| JPH0356557B2 JPH0356557B2 (en) | 1991-08-28 |
Family
ID=14714295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59117539A Granted JPS60260393A (en) | 1984-06-08 | 1984-06-08 | Optical processing of light-transmitting conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60260393A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05196949A (en) * | 1992-06-26 | 1993-08-06 | Semiconductor Energy Lab Co Ltd | Photoprocessing method for fine pattern |
| WO1997011589A1 (en) * | 1995-09-21 | 1997-03-27 | Fa. Lpkf Cad/Cam Systeme Gmbh | Coating for the structured production of conductors on the surface of electrically insulating substrates |
| US6149988A (en) * | 1986-09-26 | 2000-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Method and system of laser processing |
| US6261856B1 (en) | 1987-09-16 | 2001-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Method and system of laser processing |
| US6404476B1 (en) | 1989-09-01 | 2002-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Device having an improved connective structure between two electrodes |
| JP2015004840A (en) * | 2013-06-21 | 2015-01-08 | スタンレー電気株式会社 | Electric apparatus having transparent electrode and manufacturing method of the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55113141A (en) * | 1979-02-24 | 1980-09-01 | Fujitsu Ltd | Photo recording medium |
| JPS5670984A (en) * | 1979-11-15 | 1981-06-13 | Toppan Printing Co Ltd | Laser engraving method and mask sheet used therefor |
| JPS5672445A (en) * | 1979-11-19 | 1981-06-16 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Production of photomask |
| JPS5763291A (en) * | 1980-10-03 | 1982-04-16 | Tdk Corp | Optical recording medium |
-
1984
- 1984-06-08 JP JP59117539A patent/JPS60260393A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55113141A (en) * | 1979-02-24 | 1980-09-01 | Fujitsu Ltd | Photo recording medium |
| JPS5670984A (en) * | 1979-11-15 | 1981-06-13 | Toppan Printing Co Ltd | Laser engraving method and mask sheet used therefor |
| JPS5672445A (en) * | 1979-11-19 | 1981-06-16 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Production of photomask |
| JPS5763291A (en) * | 1980-10-03 | 1982-04-16 | Tdk Corp | Optical recording medium |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6149988A (en) * | 1986-09-26 | 2000-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Method and system of laser processing |
| US6261856B1 (en) | 1987-09-16 | 2001-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Method and system of laser processing |
| US6404476B1 (en) | 1989-09-01 | 2002-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Device having an improved connective structure between two electrodes |
| US6956635B2 (en) | 1989-09-01 | 2005-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal device and manufacturing method therefor |
| JPH05196949A (en) * | 1992-06-26 | 1993-08-06 | Semiconductor Energy Lab Co Ltd | Photoprocessing method for fine pattern |
| WO1997011589A1 (en) * | 1995-09-21 | 1997-03-27 | Fa. Lpkf Cad/Cam Systeme Gmbh | Coating for the structured production of conductors on the surface of electrically insulating substrates |
| JP2015004840A (en) * | 2013-06-21 | 2015-01-08 | スタンレー電気株式会社 | Electric apparatus having transparent electrode and manufacturing method of the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0356557B2 (en) | 1991-08-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |