JPS60247640A - Formation of negative type resist pattern - Google Patents
Formation of negative type resist patternInfo
- Publication number
- JPS60247640A JPS60247640A JP10524484A JP10524484A JPS60247640A JP S60247640 A JPS60247640 A JP S60247640A JP 10524484 A JP10524484 A JP 10524484A JP 10524484 A JP10524484 A JP 10524484A JP S60247640 A JPS60247640 A JP S60247640A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- pattern
- layer
- substrate
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【発明の詳細な説明】
（ａ）産業上の利用分野
本発明は電離放射線用ネガ型レジストパターンの形成方
法に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Industrial Application Field The present invention relates to a method for forming a negative resist pattern for ionizing radiation.
ＩＣ，ＬＳＩなどの半導体素子を始めとし、電子回路素
子に微細なパターンを形成する方法として薄膜形成技術
と写真食刻技術（ホｌ−ＩＪソグラフィ）とが使用され
ている。2. Description of the Related Art Thin film formation technology and photolithography (hol-IJ lithography) are used as methods for forming fine patterns on electronic circuit elements, including semiconductor elements such as ICs and LSIs.
ここで写真食刻技術は被処理基板の上にスピンコード法
などの方法でホトレジストを？、ｌＩ！ｆｆｌし、これ
にマスクを通して紫外線を照射して露光させるもので、
露光部が現像液に対して溶解度の差を生じるのを利用す
る。ここで像形成の型として光照射部が現像液に不溶と
なるネガタイプと可溶となるポジタイプとがある。Photo-etching technology involves applying photoresist onto a substrate to be processed using a method such as a spin code method. ,lI! ffl and expose it to ultraviolet light through a mask.
The difference in solubility of the exposed area to the developer is utilized. Here, there are two types of image forming molds: a negative type in which the light irradiated part is insoluble in the developer, and a positive type in which the light irradiated part is soluble.
さて従来の紫外線露光によるパターン形成法では波長に
よる制限から１μｍ以上の線幅をもっパターンに限られ
、１μｍ以下の微細パターンの形成は困難である。Now, the conventional pattern forming method using ultraviolet light exposure is limited to patterns having a line width of 1 μm or more due to wavelength limitations, and it is difficult to form fine patterns of 1 μm or less.
一方電子線、Ｘ線、イオンビームなどの電離放射線は波
長が紫外線に較べて遥かに小さいために１μｍ以下の微
細パターンの形成に適している。On the other hand, ionizing radiation such as electron beams, X-rays, and ion beams have much smaller wavelengths than ultraviolet rays, and are therefore suitable for forming fine patterns of 1 μm or less.
ここで電子回路素子特にＬＳＩなどの半導体素子は小形
化と高集積化が行われているため電子回路は微細化して
おり、電子線レジストを被処理基板上に被覆し電子ビー
ムを走査して露光し、これを現像して微細なレジストパ
ターンを作ることが行われている。As electronic circuit elements, especially semiconductor elements such as LSI, are becoming smaller and more highly integrated, electronic circuits are becoming finer, and electron beam resist is coated on the substrate to be processed and exposed by scanning an electron beam. This is then developed to create a fine resist pattern.
（ｂ）従来の技術
小形化と高築積化が行われているＬＳＩやＶＬＳＩなど
の半導体素子では配線パターンの立体交叉やコンタクト
ホールの形成などが行われているために基板の表面には
段差のある凹凸が多く、このような基板面にアスペクト
比（高さ７幅）の大きな微細パターンを作ることは困難
である。(b) Conventional technology Semiconductor devices such as LSI and VLSI, which are being made smaller and more stacked, have three-dimensional intersections in wiring patterns and the formation of contact holes, so there are steps on the surface of the substrate. It is difficult to create a fine pattern with a large aspect ratio (7 heights and 7 widths) on such a substrate surface.
これを解決する方法として二層構造レジスト法が最近開
発され使用されている。A two-layer resist method has recently been developed and used as a method to solve this problem.
第１図（Ａ）乃至（Ｄ）はこれによりネガ型レジストパ
ターンを形成する工程を示すもので、段差のある被処理
基板１の上に有機樹脂を厚く被覆して平坦化層２の形成
を行いその上にネガ型の電子線レジスト層３を形成し、
かかる二層構造のレジストによりパターン形成を行う。FIGS. 1(A) to 1(D) show the process of forming a negative resist pattern using this method, in which a planarizing layer 2 is formed by coating a substrate 1 with steps with a thick layer of organic resin. A negative electron beam resist layer 3 is formed thereon.
Pattern formation is performed using such a two-layer resist.
すなわち同図（、Ａ）に示すように電子線４の照射によ
り電子線レジスト層３を部分的に感光させた後、これを
現像して同図（Ｂ）に示すようなレジストパターン５を
作り、次ぎに同図（０）に示すように全面にリアクティ
ブイオンエツチング（略称ＲＩＥ）やプラズマエツチン
グを施して平坦化層２のエツチングを行う。That is, as shown in the figure (A), the electron beam resist layer 3 is partially exposed by irradiation with the electron beam 4, and then developed to form a resist pattern 5 as shown in the figure (B). Next, as shown in FIG. 3(0), the planarization layer 2 is etched by performing reactive ion etching (abbreviated as RIE) or plasma etching on the entire surface.
ここでレジストパターン５はマスクとして作用するため
に同図（Ｄ）に示すように平坦化層２ば選択的にエツチ
ングされ、被処理基板１の一ヒにレジストパターンが形
成される。Since the resist pattern 5 acts as a mask, the flattening layer 2 is selectively etched as shown in FIG.
かかる二層レジストについて今まで発表された主な構成
を述べると平坦化層のエツチングには酸素プラズマを使
用し、レジスト層としてクロロメチル化ポリジフェニル
シロキサン、１−リメチルシリルスチレンとクロロメチ
ルスチレンとの共重合体〔略称Ｐ （Ｓｉｆｔ−ＣＭＳ
） ） 、ポリジメチルシロキサン（略称ＰＤＭＳ）
などのネガ型レジストが使用されている。The main configurations of such two-layer resists that have been announced so far are as follows: Oxygen plasma is used for etching the flattening layer, and chloromethylated polydiphenylsiloxane, 1-limethylsilylstyrene and chloromethylstyrene are used as the resist layer. copolymer [abbreviation P (Sift-CMS
) ), polydimethylsiloxane (abbreviated as PDMS)
Negative resists such as are used.
（Ｃ）発明が解決しようとする問題魚
介までに発表されている二層構造レジストは一１二層を
構成するレジスト層に電子線なとの電離放射線を選択的
に照射してのら現像して図（Ｂ）に示すようなネガパタ
ーンを作り、次ぎに酸素プラズマを用いて工・７チング
を行い図（Ｄ）のようなレジストパターンが作られてい
る。(C) Problems to be Solved by the Invention The two-layer resist that has been announced up to now is developed by selectively irradiating the resist layers constituting the first and second layers with ionizing radiation such as an electron beam. A negative pattern as shown in Figure (B) is then made using oxygen plasma, and etching is then carried out using oxygen plasma to produce a resist pattern as shown in Figure (D).
然しこのようなドライエツチングを行うとエツチングか
過度に進行して被処理基板の損傷を起こし易い。However, when such dry etching is performed, the etching progresses excessively and tends to damage the substrate to be processed.
そこで本発明は化学的な方法により平坦化層をエツチン
グする新しい二階構造レジストの構成を提供する。Therefore, the present invention provides a new two-story resist structure in which the planarization layer is etched by a chemical method.
、転
（ｄ）間誤解決するための手段
本発明は上部レジストとして紫外線特に２００７’Ｊ至
３００ｎｍで光吸収の大きなネガ型の電子線レジストを
使用し、一方下部しシストとして電子線などの電離放射
線には感光しないが紫外線に良く感光するホトレジスト
を選定して使用する。In the present invention, a negative type electron beam resist with high light absorption in ultraviolet rays, especially from 2007'J to 300 nm, is used as the upper resist, while the lower resist is exposed to ionizing radiation such as electron beams as a cyst. Select and use a photoresist that is not sensitive to ultraviolet light but is sensitive to ultraviolet light.
すなわち本発明は顕著な凹凸を持つ被処理基板−ヒに電
子線レジストを被覆してアスペクト比の大きなネガパタ
ーンを形成するにあたり、該被処理基板上にクレゾール
ノボラック樹脂にキノンジアジド化合物を加えたレジス
トを上層とし、ボリアリールアセチレン系レジストをＦ
層として二層のレジスト層を作り、電離放射線で」二層
部レジストを選択露光し現像してパターンを形成した後
に紫外線露光して上層部パターンを下層部し・シストに
転写し、現像してパターンを形成することにより実現す
る。That is, in the present invention, when forming a negative pattern with a large aspect ratio by coating an electron beam resist on a substrate to be processed which has significant irregularities, a resist made by adding a quinone diazide compound to a cresol novolac resin is applied on the substrate to be processed. The upper layer is a polyarylacetylene resist.
A two-layer resist layer is created, the two-layer resist is selectively exposed to ionizing radiation, developed to form a pattern, and then exposed to ultraviolet rays to transfer the upper layer pattern to the lower cyst, which is then developed. This is achieved by forming a pattern.
（ｅ）作用
先に述べたように上部の電子線レジスト層は紫外線に対
し強い吸収をもち、商感度であることが必要であり、数
多くのネガ型電子線レジストから紫外線透過率の少ない
材料を選定した結果ボリアリールアセチレンが最も透過
率が低いことを見いだした。(e) Function As mentioned above, the upper electron beam resist layer must have strong absorption of ultraviolet rays and be commercially sensitive. As a result of selection, it was found that polyarylacetylene had the lowest transmittance.
例えば膜厚０．４８μｍでＰＭＭ＾用コールドミラーの
反射光に対して透過率１１％、またＰ旧ＰＫ用コール１
−′ミラーに対し１６％の低い透過率を示し、上部の電
子線レジストとして適している。For example, with a film thickness of 0.48 μm, the transmittance is 11% for the reflected light of the cold mirror for PMM^, and the cold mirror for PMM^ has a transmittance of 11%.
It exhibits a low transmittance of 16% relative to the -' mirror and is suitable as an upper electron beam resist.
また下部の平坦化層に用いるレジストはポジ特性を示す
ホトレジストであれば何れでも良い筈であるが、一般に
遠紫外線でポジ特性を示すレジストは電子線に対しても
ポジ特性を示し、電子線感度が高すぎると上部レジスト
のパターンニングの際に感光してしまい目的のパターン
は形成できない。In addition, the resist used for the lower planarization layer should be any photoresist that exhibits positive characteristics, but in general, resists that exhibit positive characteristics under deep ultraviolet rays also exhibit positive characteristics against electron beams, and are sensitive to electron beams. If it is too high, the upper resist will be exposed to light during patterning, making it impossible to form the desired pattern.
従って上部レジストのパターンニングの際の露光に対し
非感光性であることが必要であり、また紫外線感度のよ
いことが必要である。Therefore, it is necessary to be insensitive to exposure during patterning of the upper resist, and it is also necessary to have good sensitivity to ultraviolet rays.
そこで耐ドライエツチング性にも優れているノボラソク
キノンジアジト系遠紫外線レジストを使用した。Therefore, we used a novolazoquinonediazide-based deep ultraviolet resist, which has excellent dry etching resistance.
（ｆ）発明φ実施例
ｍ−クレゾールノボラック樹脂（重量平均分子量Ｍｗ
＝１．３ ×１０’ ＋分散度８．６）とビスフェノー
ルＡジナフトキノンジアジドスルホン酸エステルの１５
重量％とをシクロヘキサノンに溶解し調製したレジスト
液をシリコンウェハ上に１．５μｍの膜厚に塗布し８０
℃で３０分に互って加熱乾燥を行った。(f) Invention φ Example m-Cresol novolac resin (weight average molecular weight Mw
= 1.3 × 10' + dispersity 8.6) and 15 of bisphenol A dinaphthoquinonediazide sulfonic acid ester
A resist solution prepared by dissolving % by weight in cyclohexanone was applied onto a silicon wafer to a thickness of 1.5 μm.
Drying was performed by heating at ℃ for 30 minutes.
この上にポリアリルアセチレン（Ｍｗ −５，０Ｘ１０
、分散度２．５）とテトラフロ上ヒスフェノールＡジ
スルホニルアジド安息香酸エステル９重量％とをキシレ
ンに熔解し、調製したレジストを０．５μｍの膜厚に塗
布し、６０℃で１５分にわたって加熱乾燥した。On top of this, polyallylacetylene (Mw -5,0X10
, dispersion degree 2.5) and 9% by weight of hisphenol A disulfonyl azide benzoate on tetrafluor were dissolved in xylene, the prepared resist was applied to a film thickness of 0.5 μm, and heated at 60° C. for 15 minutes. Dry.
このようにして作製した二層構造レジストを３゜μＣ／
ｃｎｌの電子線露光量にてパターンニングした後、上部
レジスト層をキシレン現像液に７５秒間浸漬して現像し
た。The two-layer resist produced in this way was heated to 3゜μC/
After patterning with an electron beam exposure amount of cnl, the upper resist layer was developed by immersing it in a xylene developer for 75 seconds.
次ぎに遠紫外ランプとコールドミラー（ＩＩＭＩＰＫ用
。Next, a far ultraviolet lamp and a cold mirror (for IIMIPK).
反射率の最大強度が約２８０ｎｍ ）を用い、２（］ｍ
Ｊ ／ ｃｎｌの露光量にて全面露光した。The maximum intensity of reflectance is about 280 nm), and 2 (] m
The entire surface was exposed at an exposure amount of J/cnl.
次にシソプレイ社製のアルカリ現像液マイクロポジット
ＭＦ３１２と水との１：２容量比の現像液に１２０秒間
浸漬し、次ぎに水で３０秒リンスすることにより下部レ
ジストを現像した。Next, the lower resist was developed by immersing it in a developer containing an alkaline developer Microposit MF312 (manufactured by Shisoplay Co., Ltd.) and water at a volume ratio of 1:2 for 120 seconds, and then rinsing with water for 30 seconds.
上記の処理プロセスにより１μｍのライン・アンド・ス
ペースのネガパターンを形成することができた。Through the above treatment process, a 1 μm line and space negative pattern could be formed.
なお、この実施例で使用した一ヒ部の電子線レジスト層
の光透過率は膜厚０．５μｍの場合１６％で、下部のレ
ジストを感光させない。The light transmittance of one part of the electron beam resist layer used in this example is 16% when the film thickness is 0.5 μm, and the resist underneath is not exposed to light.
また、より短波長の光に対して透過率は更に低くなり２
２０ｎｍを最大反射率にもつコールドミラーを用いた場
合、透過率は１１％となる。In addition, the transmittance becomes even lower for light with shorter wavelengths.
When a cold mirror with a maximum reflectance of 20 nm is used, the transmittance is 11%.
（ｇ）発明の効果
以上述べたように本発明に係る二層構造レジストを使用
することにより、段差のある被処理基板への微細パター
ンの形成を基板に損傷を与えることなく行うことが可能
となる。(g) Effects of the Invention As described above, by using the two-layer resist according to the present invention, it is possible to form a fine pattern on a substrate to be processed with steps without damaging the substrate. Become.
第１図（Ａ）乃至（Ｄ）は本発明に係る二層レジストの
現像工程を示す。
図において
１は被処理基板、 ２は平坦化層、
３は電子線レジスト層、４は電子線。
第１０
（Ｃン
（Ｄ）FIGS. 1A to 1D show the development process of a two-layer resist according to the present invention. In the figure, 1 is a substrate to be processed, 2 is a flattening layer, 3 is an electron beam resist layer, and 4 is an electron beam. 10th (Cn(D)
Claims (1)
してアスペクト比の大きなネガパターンを形成するにあ
たり、該被処理基板上にクレゾールノボラック樹脂にキ
ノンジアジド化合物を加えたレジストを下層とし、ボリ
アリールアセチレン系レジストを上層として二層のレジ
スト層を作り、電離放射線で上層部レジストを選択露光
し現像してパターンを形成した後に紫外線露光して上層
部パターンを下層部レジストに転写し、現像してパター
ンを形成することを特徴とするネガ型レジストパターン
の形成方法。When forming a negative pattern with a large aspect ratio by coating an electron beam resist on a substrate with noticeable irregularities, a resist made of a cresol novolak resin and a quinonediazide compound is used as a lower layer on the substrate, and a polyaryl resin is applied to the substrate. Two resist layers are made with an acetylene resist as the upper layer, the upper resist is selectively exposed to ionizing radiation and developed to form a pattern, and then exposed to ultraviolet light to transfer the upper pattern to the lower resist and developed. A method for forming a negative resist pattern, the method comprising forming a pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10524484A JPS60247640A (en) | 1984-05-24 | 1984-05-24 | Formation of negative type resist pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10524484A JPS60247640A (en) | 1984-05-24 | 1984-05-24 | Formation of negative type resist pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60247640A true JPS60247640A (en) | 1985-12-07 |
Family
ID=14402234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10524484A Pending JPS60247640A (en) | 1984-05-24 | 1984-05-24 | Formation of negative type resist pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60247640A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63282732A (en) * | 1987-05-14 | 1988-11-18 | Agency Of Ind Science & Technol | Resist material |
-
1984
- 1984-05-24 JP JP10524484A patent/JPS60247640A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63282732A (en) * | 1987-05-14 | 1988-11-18 | Agency Of Ind Science & Technol | Resist material |
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