JPS6024724A - Radiation resisting iil integrated circuit device - Google Patents
Radiation resisting iil integrated circuit deviceInfo
- Publication number
- JPS6024724A JPS6024724A JP58131957A JP13195783A JPS6024724A JP S6024724 A JPS6024724 A JP S6024724A JP 58131957 A JP58131957 A JP 58131957A JP 13195783 A JP13195783 A JP 13195783A JP S6024724 A JPS6024724 A JP S6024724A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- iil
- current
- irradiation
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/0033—Radiation hardening
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Bipolar Integrated Circuits (AREA)
- Logic Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はＩ Ｉ Ｌ （Ｉｎｔｅｇｒａｔｅｄ Ｉｎｊ
ｅｃｔｉｏｎＬｏｇｉ ｃ ）回路に関するものである
。特にそのγ線に対する耐放射線特性を改善するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention is an integrated inj.
It is related to the ectionLogic circuit. In particular, it improves its radiation resistance against gamma rays.
ＩＩＬは少数キャリア注入用のインジェクタとスイッチ
ングトランジスタが組み合わされてなるこれまでのＩＩ
Ｌ回路はγ線等放射線が照射された場合の素子特性の劣
化は考慮されていない。IIL is a conventional II that combines an injector for minority carrier injection and a switching transistor.
The L circuit does not take into account deterioration of element characteristics when irradiated with radiation such as gamma rays.
時代の進展と共に半導体装置を原子力装置や宇宙での装
置に用いることが考慮され、こうした放射線照射のある
環境下でのγ線損失対策が重要となってきた。As time progresses, consideration is given to using semiconductor devices in nuclear power equipment and equipment in space, and countermeasures against gamma ray loss in such radiation irradiation environments have become important.
本発明の目的はγ線照射があっても回路動作を安定に保
ち得る補償回路を有するＩＩＬ集積回路を提供するもの
である。An object of the present invention is to provide an IIL integrated circuit having a compensation circuit that can maintain stable circuit operation even in the presence of γ-ray irradiation.
以下、実施例を用いて本発明の詳細な説明する。Hereinafter, the present invention will be explained in detail using Examples.
本発明の基本的概念は、γ線照射によって生じた特性変
化の分だけ、ＩＩＬ回路のバイアス電流を変化させ回路
動作の安定化をはかるものである。The basic concept of the present invention is to stabilize the circuit operation by changing the bias current of the IIL circuit by the amount of change in characteristics caused by γ-ray irradiation.
この動作を第１図に示したｒ線センサー回路２と４の部
分に設けられるものである。This operation is provided in the r-ray sensor circuits 2 and 4 shown in FIG.
回路ブロック３は対象とするＩＩＬ回路である。Circuit block 3 is the target IIL circuit.
図示された２つのトランジスタＴ＋、Ｔｚによって電流
を供給する回路が構成され、回路ブロック４はγ線によ
って生じた照射量に対応した電気量を、前記電流を供給
する回路に入力する回路である。The illustrated two transistors T+ and Tz constitute a circuit for supplying current, and circuit block 4 is a circuit that inputs an amount of electricity corresponding to the amount of irradiation generated by γ-rays to the circuit for supplying current.
たとえばγ線の照射量が増大すると、回路ブロック３の
動作余裕が低減するので、電流供給回路よシの電流値を
増大せしめれば良い。For example, when the amount of γ-ray irradiation increases, the operating margin of the circuit block 3 decreases, so the current value of the current supply circuit may be increased.
第３図はＩＩＬの電流利得とコレクタ電流の関係を示す
図である。FIG. 3 is a diagram showing the relationship between the current gain of IIL and the collector current.
曲線５が照射前、曲線６が照射後の電流利得−コレクタ
電流特性曲線である。素子には電流工、／にバイアスさ
れ点７に示す電流利得があったのが、放射線照射後では
９に低下したため、十分な回路の動作ができなくなって
、回路誤動作が生じる。Curve 5 is the current gain-collector current characteristic curve before irradiation, and curve 6 is the current gain-collector current characteristic curve after irradiation. The element had a current gain shown at point 7 due to the current bias, but this decreased to 9 after radiation irradiation, making it impossible for the circuit to operate satisfactorily, resulting in circuit malfunction.
そこで本発明の基本的概念は、放射線照射によって生じ
た特性変化の分だけ、ＩＩＬのバイアス電流を変化させ
、回路動作の安定化をはかろうとＴ３の電流利得パラメ
ータをγ線照射量のセンサとして用いている。すなわち
、照射によってＴ３の電流利得が低下し、Ｔ３のコレク
タ電位ｖ２が上昇すると、変換回路１によって出力の電
流工が増大するという信号を発生させるものである。Therefore, the basic concept of the present invention is to change the bias current of IIL by the characteristic change caused by radiation irradiation, and use the current gain parameter of T3 as a gamma ray irradiation dose sensor in order to stabilize the circuit operation. I am using it. That is, when the current gain of T3 decreases due to irradiation and the collector potential v2 of T3 increases, the conversion circuit 1 generates a signal indicating that the output current is increased.
なお、第１図においてトランジスタＴ３は、利得を大き
くとるために直接エミッタ接地の回路構成とし、几、は
トランジスタＴ、を能動領域に設定するための調整抵抗
であシ、Ｒ２はＴ３の負荷抵抗でおる。また変換回路１
は、差動増幅回路Ａと抵抗Ｒ３，Ｒ４からなる電圧−電
流変換回路で、Ｔ３のコレクタ電圧の上昇に伴ない、出
力電流Ｉを増大させるものである。In Fig. 1, the transistor T3 has a direct emitter-grounded circuit configuration in order to obtain a large gain, 几 is an adjustment resistor for setting the transistor T to the active region, and R2 is the load resistance of T3. I'll go. Also, conversion circuit 1
is a voltage-current conversion circuit consisting of a differential amplifier circuit A and resistors R3 and R4, which increases the output current I as the collector voltage of T3 increases.
以上述べた如く、本発明によればγ線照射によって生じ
た回路特性の変化を電流を調整することによって自動的
に復帰させ、安定な動作をはかることができる。As described above, according to the present invention, changes in circuit characteristics caused by γ-ray irradiation can be automatically restored by adjusting the current, and stable operation can be achieved.
第１図はγ線量を検知し電気信号に変換する回路を示す
図、第２図はγ線損傷を補償する回路を設けたＩＩＬ回
路、第３図はＩＩＬ回路の電流側ＴＩ、’Ｉ”２．Ｔ３
・・・トランジスタ、Ｒ□、 Ｒ１，、Ｒ３、Ｒ４・・
・抵抗。
特許出願人 工業技術院長 川田裕部
Ｑ
χ １ 図
２
′ｆＩ２ 目
′ｆＩ：３ 図
ＪＬリ （フレフタ１陳）しン（Ａ）Figure 1 is a diagram showing a circuit that detects the gamma ray dose and converts it into an electrical signal, Figure 2 is an IIL circuit equipped with a circuit to compensate for gamma ray damage, and Figure 3 is the current side TI of the IIL circuit, 'I'. 2.T3
...Transistor, R□, R1,, R3, R4...
·resistance. Patent applicant: Director of the Agency of Industrial Science and Technology Hirobe Kawata Q
Claims (1)
らの電気信号に基づいてＩＩＬ回路の動作電流を制御す
る手段を有する耐放射線ＩＩＬ集積回路装置であって、
前記照射されるγ線量を電気信号に変換する手段が所定
のバイポーラ・トランジスタのベースとコレクタの各々
に第１および第２の抵抗が接続され、これらの抵抗はそ
の他端で相互に接続され、前記バイポーラ・トランジス
タのエミッタが直接接地デれ、前記コレクタがＩＩＬ回
路の動作電流を制御する手段に接続されて成ることを特
徴とする耐放射線ＩＩＬ集積回路装置。A radiation-resistant IIL integrated circuit device comprising means for converting an irradiated γ-ray dose into an electrical signal and means for controlling an operating current of an IIL circuit based on the electrical signal from the means, the device comprising:
The means for converting the irradiated gamma ray dose into an electrical signal includes first and second resistors connected to the base and collector of the predetermined bipolar transistor, respectively, these resistors being connected to each other at the other end, A radiation-resistant IIL integrated circuit device, characterized in that the emitter of a bipolar transistor is directly connected to ground, and the collector is connected to means for controlling the operating current of the IIL circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58131957A JPS6024724A (en) | 1983-07-21 | 1983-07-21 | Radiation resisting iil integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58131957A JPS6024724A (en) | 1983-07-21 | 1983-07-21 | Radiation resisting iil integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6024724A true JPS6024724A (en) | 1985-02-07 |
| JPH0218772B2 JPH0218772B2 (en) | 1990-04-26 |
Family
ID=15070160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58131957A Granted JPS6024724A (en) | 1983-07-21 | 1983-07-21 | Radiation resisting iil integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6024724A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5325697A (en) * | 1991-05-06 | 1994-07-05 | Morgan Construction Company | Method and apparatus for continuously hot rolling ferrous long products |
-
1983
- 1983-07-21 JP JP58131957A patent/JPS6024724A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5325697A (en) * | 1991-05-06 | 1994-07-05 | Morgan Construction Company | Method and apparatus for continuously hot rolling ferrous long products |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0218772B2 (en) | 1990-04-26 |
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