JPS60244838A - Detector for degree of contamination of waste gas in continuous heat treating device for fabric - Google Patents
Detector for degree of contamination of waste gas in continuous heat treating device for fabricInfo
- Publication number
- JPS60244838A JPS60244838A JP59100663A JP10066384A JPS60244838A JP S60244838 A JPS60244838 A JP S60244838A JP 59100663 A JP59100663 A JP 59100663A JP 10066384 A JP10066384 A JP 10066384A JP S60244838 A JPS60244838 A JP S60244838A
- Authority
- JP
- Japan
- Prior art keywords
- infrared
- contamination
- infrared light
- hydrocarbon
- exhaust duct
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000011109 contamination Methods 0.000 title claims abstract description 13
- 239000004744 fabric Substances 0.000 title claims description 12
- 239000002912 waste gas Substances 0.000 title 1
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 25
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 25
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 19
- 230000003287 optical effect Effects 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 24
- 238000001514 detection method Methods 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 12
- 238000010926 purge Methods 0.000 abstract description 2
- 238000002834 transmittance Methods 0.000 abstract description 2
- 238000009423 ventilation Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000012209 synthetic fiber Substances 0.000 description 2
- 229920002994 synthetic fiber Polymers 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000009940 knitting Methods 0.000 description 1
- JNQQEOHHHGGZCY-UHFFFAOYSA-N lithium;oxygen(2-);tantalum(5+) Chemical compound [Li+].[O-2].[O-2].[O-2].[Ta+5] JNQQEOHHHGGZCY-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N21/03—Cuvette constructions
- G01N21/031—Multipass arrangements
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Optical Measuring Cells (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Treatment Of Fiber Materials (AREA)
- Drying Of Solid Materials (AREA)
- Inorganic Fibers (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、乾燥機、ヒートセッター、テンター、ベーキ
ング、スチーマ−など布帛の連続熱処理装置の排ガスの
汚染度検知装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a device for detecting the degree of contamination of exhaust gas from continuous heat treatment equipment for fabrics such as dryers, heat setters, tenters, bakers, and steamers.
従来、この種の連続熱処理装置においては合成繊維布帛
の寸法安定化を行う為、合成繊維の熱可塑性全利用し、
染色工程前後に２００℃前後の熱風で加熱処理上行うが
、通常この熱風は連続的に処理装置外へ排気されており
多大な熱エネルギーの損失となっている。Conventionally, in this type of continuous heat treatment equipment, in order to stabilize the dimensions of synthetic fiber fabrics, the thermoplastic properties of synthetic fibers are fully utilized.
Before and after the dyeing process, heat treatment is performed using hot air at around 200°C, but normally this hot air is continuously exhausted out of the processing equipment, resulting in a large loss of thermal energy.
この熱エネルギー損失を減少させる為には排気量を絞る
のがよいが絞り方によっては当該連続熱処理装置内全通
過する布帛に汚れが発生する場合がある。In order to reduce this thermal energy loss, it is better to restrict the exhaust volume, but depending on the method of restriction, stains may occur on the fabric that passes through the continuous heat treatment apparatus.
本発明は、当該装置の排気の汚染度を検知し通過する布
帛に汚れ音発生させない程度に排気量全校り熱エネルギ
ー損失全最小とする為の検知装置全対象とするものであ
る。The present invention is intended for all detection devices for detecting the degree of contamination of the exhaust gas of the device, and minimizing the thermal energy loss by calibrating the entire exhaust amount to an extent that no contamination noise is generated on the passing fabric.
本発明者等は布帛の汚染物質について検討した結果、紡
糸、コーニング、製織編時に使用される繊維油剤から発
生する炭化水素ガスが濃縮冷却結露し布帛上に滴下する
ものであることがわかった。As a result of studying contaminants on fabrics, the present inventors found that hydrocarbon gas generated from textile oils used during spinning, corning, weaving and knitting condenses, condenses, and drips onto fabrics.
又、これらの炭化水素ガスは主に３〜４μの赤外波長域
に−ＣＨ３，−ＣＨ２−の伸縮振動に基づく吸収帯？持
つパラフィン系炭化水素及びその化合物であることがわ
かった。Also, these hydrocarbon gases mainly have an absorption band in the 3-4 μ infrared wavelength region based on the stretching vibration of -CH3, -CH2-. It was found that these are paraffinic hydrocarbons and their compounds.
一般に、炭化水素ガス体の濃度検知装置としては、水素
炎イオン化検知器全応用したガスクロマトグラフ、赤外
線吸収全応用したもの、可視光及び紫外光吸収全応用し
たもの、レーザー光によるラマン散乱音応用したもの等
がある。In general, concentration detection devices for hydrocarbon gases include gas chromatographs that use hydrogen flame ionization detectors, devices that use infrared absorption, devices that use visible and ultraviolet absorption, and devices that use Raman scattered sound using laser light. There are things etc.
従来、実用されている炭化水素濃度検知装置の多くは水
素炎イオン化検知器？応用したもの及び赤外線吸収全応
用したものである。Conventionally, most of the hydrocarbon concentration detection devices in practical use are hydrogen flame ionization detectors. This is a fully applied infrared absorption system.
前者は、水素炎中に有機物質が混入してくると炭素全中
心としたイオン七発生しそのイオンの数は有機物質の量
に比例する事全原理とし、後者は炭化水素による赤外線
吸収？原理とするものである。炭化水素分子による赤外
線吸収は気相における定量分析においてもＬａｍｂｅｒ
Ｃ−Ｂｅｅｒの法則が成立し、入射赤外線強度ＩＯ２透
過赤外線強度Ｉ、赤外線吸光度Ｅ、赤外線吸光係数に、
炭化水素濃度Ｃとすると次の式が成立する。The former is based on the principle that seven carbon-centered ions are generated when organic substances are mixed into a hydrogen flame, and the number of ions is proportional to the amount of organic substances, and the latter is based on the principle that infrared rays are absorbed by hydrocarbons. This is the principle. Infrared absorption by hydrocarbon molecules is also used in quantitative analysis in the gas phase.
C-Beer's law is established, and the incident infrared intensity IO2 transmitted infrared intensity I, infrared absorbance E, and infrared extinction coefficient are:
When the hydrocarbon concentration is C, the following equation holds true.
Ｏ
Ｅ ＝ ｌ ｏｇ −７−＝ Ｋ−Ｃ
赤外線吸光係数Ｋｋ求める為には、濃度既知の炭化水素
試料での赤外線吸光度をめれば算出でき、赤外線吸光係
数がわかれば成る赤外線吸光度における炭化水素の絶対
濃度がわかる。O E = l og -7-= K-C To determine the infrared absorption coefficient Kk, it can be calculated by calculating the infrared absorbance of a hydrocarbon sample with a known concentration. The absolute concentration of
しかしいずれも検知装置中にサンプルガス會導入させる
方法？とっておシ、応答速度が遅い事・導入管のメンテ
ナンス（炭化水素の冷却結露）の問題でプロセス計器と
して充分な性能を持つものがない。However, in either case, is there a way to introduce the sample gas into the detection device? Especially, there is no one with sufficient performance as a process instrument due to slow response speed and problems with maintenance of the inlet pipe (condensation due to cooling of hydrocarbons).
本発明者等は上記の難点を解消すべく検討した結果、プ
ロセス計器として充分な性能金偏え、赤外線吸収を応用
した炭化水素ガス濃度検知装置全発明するに到った。The inventors of the present invention have conducted studies to solve the above-mentioned problems, and as a result, they have invented a hydrocarbon gas concentration detection device that utilizes infrared absorption and has sufficient performance as a process instrument.
尚、炭化水素粒子の紫外線によるレーリー散乱を応用し
た炭化水素ガス検知装置も検討したが、この方式は粒子
の大きさによる影響が大きく炭化水素ガス濃度検知装置
としては適性がない事が判明した。We also considered a hydrocarbon gas detection device that applied Rayleigh scattering of hydrocarbon particles due to ultraviolet rays, but this method was found to be unsuitable as a hydrocarbon gas concentration detection device due to the large effect of particle size.
即ち本発明は布帛の連続処理装置の排気ダクトにおける
排ガスの汚染度？連続的に検知する装置において、排気
ダクトの両側面に開口部欠設け、そこに赤外発光部、赤
外フィルター及び赤外検知部を配置してなる布帛の連続
熱処理装置の排気ダクトにおける排ガスの汚染度検知装
置全提供するものである。In other words, the present invention improves the degree of contamination of exhaust gas in the exhaust duct of continuous processing equipment for fabrics. In a device that continuously detects exhaust gas in the exhaust duct of a continuous heat treatment device for fabric, the exhaust duct has an opening on both sides and an infrared light emitting section, an infrared filter, and an infrared detection section are arranged there. All contamination level detection devices are provided.
本発明装置に供する排ガスは炭化水素を主体に含み１０
０−２２０℃の温度を有する。The exhaust gas supplied to the device of the present invention mainly contains hydrocarbons.
It has a temperature of 0-220°C.
本発明の検知装置は、排気ダクトの両側面に開口部を設
け、赤外発光部と赤外受光部？対向設置すること全基本
構成とする。The detection device of the present invention has openings on both sides of the exhaust duct, an infrared light emitting part and an infrared light receiving part. All basic configurations are to be installed facing each other.
尚、赤外受光部は赤外フィルターと赤外検知部より構成
されるものとする。Note that the infrared light receiving section is composed of an infrared filter and an infrared detection section.
第１図により詳述すると、排気ダクト（１）の両側面に
開口部（２，２：）ｖ設は赤外発光部（３）と、前部に
赤外フィルター（４）上記した赤外検知部（５権対向す
る様に設置する。To explain in detail with reference to Fig. 1, the openings (2, 2:) on both sides of the exhaust duct (1) are equipped with an infrared light emitting part (3), and an infrared filter (4) in the front part. Detection unit (installed so that the five powers are facing each other.
赤外発光源としては赤外発光ダイオード、赤外発光ラン
プ例えばタングステンランプ、及び水銀灯赤外発光発熱
体例えば炭化ケイ素焼結体や酸化ジルコニウム（含酸化
イツトリウム、酸化トリウム）の焼結体、その他ニクロ
ム線を巻いたものや炭素アークがある。赤外フィルター
としては色ガラスフィルター、多層膜干渉フィルターが
あるが、フィルターとしては、空気による赤外吸収がな
くかつ炭化水素による赤外吸収の大きい３〜４μの赤外
波長域において赤外透過率の良好なもの全選択する。Examples of infrared light sources include infrared light emitting diodes, infrared light emitting lamps such as tungsten lamps, and mercury lamps. There are wire-wound ones and carbon arcs. Infrared filters include colored glass filters and multilayer interference filters, but filters have infrared transmittance in the 3-4μ infrared wavelength range, where there is no infrared absorption by air and where infrared absorption by hydrocarbons is large. Select all the good ones.
赤外検知部（５）は赤外センサー、集光系光学材料、増
幅器から構成される。赤外センサーは大別すると量子型
と熱型がある。量子型は赤外線全光量子としてとらえそ
のエネルギーによる電離作用の結果としての電気伝導度
の変化ケとらえるものである。The infrared detection section (5) is composed of an infrared sensor, a condensing optical material, and an amplifier. Infrared sensors can be roughly divided into quantum type and thermal type. The quantum type captures the total infrared light quantum and captures the change in electrical conductivity as a result of the ionization effect due to its energy.
量子型センサーにはＰｂＳ、 Ｐｂ５ｅ、 ＰｂＴｅ、
ＩｎＳｂ、 ＨａＣｄｒｅ （ＤＬうな結晶ｆヒ合物
半導体會利用したものと、Ｇｅ ： Ａｒｂ ＋ Ｇｅ
：Ｈｇ 、 Ｇａ：Ａ８ のように母体に不純物全混
入させ゛た結晶体音利用した光伝導セルであるが、これ
らのタイプのものは一般に特定赤外波長に対して非常に
高い検出感度全示し時定数も小さいが使用時に冷却を必
要とする為用途は特殊なものに限られる。Quantum sensors include PbS, Pb5e, PbTe,
InSb, HaCdre (DL) using crystalline compound semiconductors, Ge: Arb + Ge
:Hg, Ga:A8, etc. are photoconductive cells that utilize crystalline bodies with all impurities mixed into the matrix, but these types generally exhibit very high detection sensitivity for specific infrared wavelengths. Although it has a small time constant, it requires cooling during use, so its use is limited to special applications.
熱型は、赤外線全熱とし、てとらえその熱エネルギーに
よる温えるものである。熱型センサーとしては次の様な
ものがある。Thermal type uses the total heat generated by infrared rays, and uses that thermal energy to warm the body. Thermal sensors include the following:
■ 熱起電力？利用した熱電対列（サーモパイル）があ
り、これはＥｉ−８ｂ、Ｂ１−ＭｏやＩｎ５ｂ−Ｔｅ等
の薄膜熱電対列を用いている。■ 熱による電気抵抗変
化ケ利用した抵抗微熱計（′７Ｆ：ロメータ）がちへこ
れにはＮｉ ＋ Ｐｉ 、 Ａｒｂなどの金属薄片全用
いるものやＮｉ 、Ｍｎ 、 Ｃｏなどの酸化物音適当
に混合して焼結した半導体を用いるもの等がある。■
熱による小室内のガス圧の変化を利用した一種の気体温
度計である気体セルにューマテイツクセル）があ広その
中には不活性ガス例えばキセノン、ヘリウム全周い熱に
よるガス圧変化を光学的変化としてとらえるゴーレイセ
ルと、電気容量変化としてとらえるマイクロホン検知器
等がある。■ 熱による電荷発生（焦電効果）を利用し
た焦電型センサー（パイロ）があり、これにはＰｂＴｉ
０３（チタン酸鉛） ｒ ＬｉＮｂＯ３，ＬｉＴａ０３
（リチウム酸タンタル）、ＴＧｓ（三硫化グリシン）、
ｓｔｙ、ｐｍｔどの単結晶又はセラミックやＦＶＦ２（
ポリフッｆヒピニリデン）などの高分子フィルムを用い
るものがある。■ Thermoelectromotive force? There is a thermopile utilized, which is a thin film thermopile such as Ei-8b, B1-Mo or In5b-Te. ■Resistance thermometer ('7F: Rometer) that utilizes changes in electrical resistance due to heat.This uses a thin metal flake such as Ni + Pi or Arb, or an appropriate mixture of oxides such as Ni, Mn, or Co. There are some that use sintered semiconductors. ■
There is a wide variety of gas thermometers (gas cells and pneumatic cells) which are a type of gas thermometer that uses changes in gas pressure in a small chamber due to heat. There are Golay cells, which detect this as an optical change, and microphone detectors, which detect it as a change in capacitance. ■ There is a pyroelectric sensor (pyro) that uses charge generation due to heat (pyroelectric effect).
03 (Lead titanate) r LiNbO3, LiTa03
(tantalum lithium oxide), TGs (glycine trisulfide),
sty, pmt etc. single crystal or ceramic or FVF2 (
Some use polymer films such as poly(fluorinated).
集光系光学材料として赤外センサーの前部に赤外透過レ
ンズ例えば石英レンズやシリコンレンズ等會用いるか、
赤外センサーを逆向きにしてその後部に白金、金、銀、
アルミ、クロム。Either use an infrared transmitting lens such as a quartz lens or a silicon lens in front of the infrared sensor as an optical material for the condensing system.
Platinum, gold, silver,
Aluminum, chrome.
ニッケル等の金属全蒸着し鏡面とした赤外反射凹面鏡を
用いる。An infrared reflecting concave mirror with a mirror surface made of metal such as nickel is fully vapor-deposited.
本発明者等は赤外発光部及び赤外受光部ケ熱及び炭化水
素汚染から保護する手段も検討した。第２図により詳述
すると、赤外発光部及び赤外受光部の前に赤外透過透明
板（６，６’）例えば石英ガラス等を設置する。更に、
その透明板（６，６’）’に熱及び炭化水素汚染から保
護する為透明板（６，６’）の前部に冷清浄送気部（８
，８’）ｈ設はエアーパージを行なう。冷清浄送気体と
しては空気又は不活性ガス例えば窒素ガス等會用いる。The inventors also investigated means for protecting the infrared light emitting section and the infrared light receiving section from heat and hydrocarbon contamination. To explain in detail with reference to FIG. 2, an infrared transmitting transparent plate (6, 6') such as quartz glass or the like is installed in front of the infrared light emitting section and the infrared light receiving section. Furthermore,
In order to protect the transparent plate (6, 6')' from heat and hydrocarbon contamination, a cold clean air supply part (8
, 8') Perform air purge. Air or an inert gas such as nitrogen gas is used as the cold clean gas.
又、非測定時あるいは冷清浄送気停止時にはシャッター
（２，２’）によシ測定ロ會遮蔽し、炭化水素等による
赤外透過透明板（６，６’）の汚染を防止して測定精度
の保持を可能とした。又、ガス流体の微量検出方法には
いろいろな方法が考えられるが、ガス流体の測定間隔？
大きくするすなわち光路長を長くすることが最も良い。In addition, when not measuring or when cold clean air supply is stopped, the measurement area is shielded by the shutter (2, 2') to prevent contamination of the infrared transmitting transparent plate (6, 6') with hydrocarbons, etc. This made it possible to maintain accuracy. Also, there are various methods for detecting trace amounts of gas fluid, but what about the measurement interval of gas fluid?
It is best to increase the optical path length.
第３図によシ詳述するとダクト（１）の両側面開口部（
２，２’）に前述金属音蒸着し鏡面とした赤外反射平面
鏡（９，９’）ｉ複数個配置し赤外発光部と受光部との
間欠多重光路とする。但し、多重光路方式とした場合は
実際の炭化水素濃度に対しての検出量は多重倍となる事
に注意する。Referring to Fig. 3 in detail, the openings on both sides of the duct (1) (
A plurality of infrared reflecting plane mirrors (9, 9')i having mirror surfaces formed by the above-described metal acoustic vapor deposition are arranged in 2, 2') to form intermittent multiple optical paths between the infrared light emitting part and the light receiving part. However, if a multiple optical path method is used, it should be noted that the detected amount will be multiple times the actual hydrocarbon concentration.
かかる構成ケ有する本発明装置音用いることにより布帛
の連続熱処理装置における排ガスの汚染度全、簡単に、
信頼性よく検知できる。By using the sound of the apparatus of the present invention having such a configuration, the degree of contamination of exhaust gas in a continuous heat treatment apparatus for fabrics can be easily reduced.
Can be detected reliably.
第１図は本発明の基本構造図、第２図は装置上熱及び炭
化水素付着より保護する為の周辺機材？設置する場合の
構造図、第３図は多重光路系とする場合の構造図である
、１・・・・・・排気ダクト、２，２′・・・・・・排
気ダクト開口部、３・・・・・・赤外発光部、 ４・・
・・・・干渉フィルター、 ５・・・・・・赤外検知部
、６．６’・・・・・・透明保護板、７．７’・・・・
・・シャッター、８．８′・・・・・・冷清浄不活性ガ
ス送気部、 ９，９′・・・・・・赤外反射平面鏡。
出願人 メイトサイエンス株式会社
同 セーレン株式会社
＼
代理人 弁理士 用瀬 民泊 、；
ゝ、ノ
同 弁理士 斉 藤 武 彦、７ １
、（４
人・ −〆Figure 1 is a basic structural diagram of the present invention, and Figure 2 is peripheral equipment to protect the equipment from heat and hydrocarbon adhesion. Fig. 3 is a structural diagram when installing a multiple optical path system. 1... Exhaust duct, 2, 2'... Exhaust duct opening, 3. ...Infrared light emitting section, 4...
...Interference filter, 5...Infrared detection section, 6.6'...Transparent protection plate, 7.7'...
...Shutter, 8.8'...Cold clean inert gas supply section, 9,9'...Infrared reflecting plane mirror. Applicant Mate Science Co., Ltd. Seiren Co., Ltd. Agent Patent attorney Minpaku Youse; Patent attorney Takehiko Saito, 71, (4 people)
Claims (1)
排ガスの汚染度を連続的に検知する装置において、排気
ダクト（１）の両側面に開口部（２，２’）ｔ−設け、
そこに赤外発光部（３）、赤外フィルター（４）及び赤
外検知部（５）全配置すること奮特徴とする布帛の連続
熱処理装置における排ガスの汚染度検知装置。 ２、前記赤外フィルターの赤外線透過波長域を３〜４μ
の範囲内とする特許請求第１項記載の検知装置。 ３、゛前記排気ダクト（１）に配置する赤外発光部（３
）、赤外フィルター（４）及び／又は赤外検知部（５）
、全熱及び炭化水素付着より保護すΣ透明板（６，６つ
及び／又はシャッター（７、７’）及び／又は冷清浄不
活性ガス送気部（８，８’）ｋ配置することを特徴とす
る特許請求第１項記載の検知装置。 ４、前記排気ダクト（１）の側面開口部（２、２’）間
に鏡面（９，９’）を複数個配置し、赤外発光部（３）
、赤外受光部間で多重光路とし光路長ケ長くすることを
特徴とする特許請求第１項又は第３項記載の検知装置。[Claims] 1. In a device for continuously detecting the degree of contamination of exhaust gas in an exhaust duct (1) of a continuous heat treatment device for fabrics, openings (2, 2') are provided on both sides of the exhaust duct (1). t-provided;
A contamination level detection device for exhaust gas in a continuous fabric heat treatment apparatus, characterized in that an infrared light emitting section (3), an infrared filter (4), and an infrared detection section (5) are all arranged therein. 2. The infrared transmission wavelength range of the infrared filter is 3 to 4μ.
The detection device according to claim 1, which falls within the range of. 3. Infrared light emitting section (3) disposed in the exhaust duct (1)
), infrared filter (4) and/or infrared detection section (5)
, Σ Transparent plates (6, 6 and/or shutters (7, 7') and/or cold clean inert gas supply parts (8, 8') to protect against total heat and hydrocarbon adhesion are recommended. The detection device according to claim 1, characterized in that: 4. A plurality of mirror surfaces (9, 9') are arranged between the side openings (2, 2') of the exhaust duct (1), and an infrared light emitting part is provided. (3)
The detection device according to claim 1 or 3, characterized in that multiple optical paths are formed between the infrared light receiving sections and the optical path length is increased.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59100663A JPS60244838A (en) | 1984-05-21 | 1984-05-21 | Detector for degree of contamination of waste gas in continuous heat treating device for fabric |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59100663A JPS60244838A (en) | 1984-05-21 | 1984-05-21 | Detector for degree of contamination of waste gas in continuous heat treating device for fabric |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60244838A true JPS60244838A (en) | 1985-12-04 |
| JPH0260258B2 JPH0260258B2 (en) | 1990-12-14 |
Family
ID=14280029
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59100663A Granted JPS60244838A (en) | 1984-05-21 | 1984-05-21 | Detector for degree of contamination of waste gas in continuous heat treating device for fabric |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60244838A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009032205A3 (en) * | 2007-09-05 | 2009-05-14 | Ge Analytical Instr Inc | Carbon measurement in aqueous samples using oxidation at elevated temperatures and pressures |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5536790A (en) * | 1978-06-26 | 1980-03-14 | Measurex Corp | Gas measuring device with calibration means* and method of measuring gas |
| JPS5653447A (en) * | 1979-08-29 | 1981-05-13 | Econics Corp | Flue gas analyzer |
-
1984
- 1984-05-21 JP JP59100663A patent/JPS60244838A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5536790A (en) * | 1978-06-26 | 1980-03-14 | Measurex Corp | Gas measuring device with calibration means* and method of measuring gas |
| JPS5653447A (en) * | 1979-08-29 | 1981-05-13 | Econics Corp | Flue gas analyzer |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009032205A3 (en) * | 2007-09-05 | 2009-05-14 | Ge Analytical Instr Inc | Carbon measurement in aqueous samples using oxidation at elevated temperatures and pressures |
| US8101418B2 (en) | 2007-09-05 | 2012-01-24 | Ge Analytical Instruments | Carbon measurement in aqueous samples using oxidation at elevated temperatures and pressures |
| US8101420B2 (en) | 2007-09-05 | 2012-01-24 | Ge Analytical Instruments | Carbon measurement in aqueous samples using oxidation at elevated temperatures and pressures |
| US8101419B2 (en) | 2007-09-05 | 2012-01-24 | Ge Analytical Instruments | Carbon measurement in aqueous samples using oxidation at elevated temperatures and pressures |
| US8101417B2 (en) | 2007-09-05 | 2012-01-24 | Ge Analytical Instruments | Carbon measurement in aqueous samples using oxidation at elevated temperatures and pressures |
| US8114676B2 (en) | 2007-09-05 | 2012-02-14 | Ge Analytical Instruments | Carbon measurement in aqueous samples using oxidation at elevated temperatures and pressures |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0260258B2 (en) | 1990-12-14 |
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