JPS60241273A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS60241273A JPS60241273A JP59096372A JP9637284A JPS60241273A JP S60241273 A JPS60241273 A JP S60241273A JP 59096372 A JP59096372 A JP 59096372A JP 9637284 A JP9637284 A JP 9637284A JP S60241273 A JPS60241273 A JP S60241273A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- impressed
- semiconductor device
- bias
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 239000011368 organic material Substances 0.000 claims abstract description 7
- 238000003860 storage Methods 0.000 claims description 8
- 230000001186 cumulative effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 7
- 238000005401 electroluminescence Methods 0.000 abstract description 4
- 239000000969 carrier Substances 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract description 3
- 238000009825 accumulation Methods 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000002052 molecular layer Substances 0.000 description 6
- 239000000975 dye Substances 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 2
- 150000004668 long chain fatty acids Chemical group 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- 235000021314 Palmitic acid Nutrition 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001454 anthracenes Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- DZVCFNFOPIZQKX-LTHRDKTGSA-M merocyanine Chemical class [Na+].O=C1N(CCCC)C(=O)N(CCCC)C(=O)C1=C\C=C\C=C/1N(CCCS([O-])(=O)=O)C2=CC=CC=C2O\1 DZVCFNFOPIZQKX-LTHRDKTGSA-M 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 125000005471 saturated fatty acid group Chemical group 0.000 description 1
- 150000004671 saturated fatty acids Chemical class 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 150000004961 triphenylmethanes Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/024—Details of scanning heads ; Means for illuminating the original
- H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
- H01L31/141—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the semiconductor device sensitive to radiation being without a potential-jump barrier or surface barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/87—Light-trapping means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/622—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing four rings, e.g. pyrene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/652—Cyanine dyes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/701—Langmuir Blodgett films
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は半導体装置、特に光情報を処理する積層構造の
半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a semiconductor device, and particularly to a semiconductor device with a stacked structure for processing optical information.
従来の半導体装置は、無機材料によって形成されている
。有機材料は、機能性に富み、また製造容易かつ安価で
あるが、耐熱性や機械的強度の点で問題があったからで
ある。しかし、最近の技術ではかかる点を克服する種々
の機能を有する有機材料が生まれている。Conventional semiconductor devices are made of inorganic materials. This is because organic materials are highly functional, easy to manufacture, and inexpensive, but have problems in terms of heat resistance and mechanical strength. However, recent technology has produced organic materials having various functions that overcome this problem.
本発明は上記の点に鑑みて提案されたものであり、有機
材料で形成された多機能の半導体装置の提供を目的とす
る。The present invention has been proposed in view of the above points, and an object of the present invention is to provide a multifunctional semiconductor device formed of an organic material.
本発明の半導体装置の構成は、少なくとも−が透明性で
ある二つの導電膜の間に配置された積層構造の光導電層
、電荷蓄積層およびエレクトロ・ルミネッセンス層とを
有し、前記光導電層、電荷蓄積層およびエレクトロ・ル
ミネッセンス層の少なくともいずれか一層が有機材料の
単分子膜又は単分子累積膜により形成されたものである
ことを特徴とする。The structure of the semiconductor device of the present invention includes a photoconductive layer, a charge storage layer, and an electroluminescence layer of a laminated structure arranged between two conductive films whose at least - is transparent, and the photoconductive layer , at least one of the charge storage layer and the electroluminescence layer is formed of a monomolecular film or a monomolecular cumulative film of an organic material.
第１図は本発明の実施例に係る半導体装置の断面構造な
含む詳細な構成図である。図な参照しながら実施例の構
成を説明する。FIG. 1 is a detailed configuration diagram including a cross-sectional structure of a semiconductor device according to an embodiment of the present invention. The configuration of the embodiment will be explained with reference to the drawings.
１は透明の基板であり、２は基板１の全面に形成された
透明電極である。６は光導電層で、光導電性を有する分
子層によって形成されており、分子層としては光導電性
を有する色素、例えば長鎖アルキル置換のメロシアニン
色素、長鎖アルキル置換のトリフェニルメタン色素およ
びピレンの中から選ばれる。アルキル基の長さとしては
好適にはＣ−１０〜１８が辺ばれる。具体的にはが挙げ
られる。1 is a transparent substrate, and 2 is a transparent electrode formed on the entire surface of the substrate 1. Reference numeral 6 denotes a photoconductive layer, which is formed by a molecular layer having photoconductivity, and the molecular layer includes dyes having photoconductivity, such as long-chain alkyl-substituted merocyanine dyes, long-chain alkyl-substituted triphenylmethane dyes, and Selected from pyrene. The length of the alkyl group is preferably C-10 to C-18. Specific examples include.
４は、光導電層３で発生したキャリヤ（電子または正孔
）をトラップして分極を生じる分子層によって形成され
た電荷蓄積層であり、分極分子層としては電子やホール
の注入によってトラップに電荷が蓄積可能であるような
長鎖飽和脂肪酸または長鎖飽和脂肪酸基をもつ化合物で
、アルキル基の飯さとしてＣ＝１６〜２２が選ばれるこ
とが望ましい。例えばアラキシン酸、ステアリン酸、パ
ルミチン酸などが挙げられる。なお、長鎖脂肪酸基をも
つ化合物の場合、長鎖脂肪酸基以外の部分にトラップ部
位があってもよい。4 is a charge storage layer formed by a molecular layer that traps carriers (electrons or holes) generated in the photoconductive layer 3 and generates polarization; the polarized molecular layer traps charges by injecting electrons or holes; It is preferable that C=16 to 22 be selected as the size of the alkyl group in a compound having a long chain saturated fatty acid or a long chain saturated fatty acid group that can accumulate. Examples include araxic acid, stearic acid, palmitic acid, and the like. In addition, in the case of a compound having a long-chain fatty acid group, a trap site may exist in a portion other than the long-chain fatty acid group.
５はエレクトロ・ルミネッセンス層であり、電界によっ
て発光する分子層で形成されている。この分子層として
は、例えば機能性部分が疎水基と親水基との中間にある
アントラセン（岨刈江印）の誘導体の中より選ばれる。5 is an electroluminescence layer, which is formed of a molecular layer that emits light by an electric field. This molecular layer is selected from, for example, derivatives of anthracene (Akarie brand) in which the functional moiety is located between a hydrophobic group and a hydrophilic group.
６は透明電極である。また７は交流電源、８は直流電源
であり、スイッチ回路９の切替えにより正の直流バイア
ス電圧に重畳した交流信号、または負の直流バイアス電
圧に重畳した交流信号を透明電極２と透明゛電極６の間
に印加できる。6 is a transparent electrode. Further, 7 is an AC power supply, and 8 is a DC power supply, and by switching a switch circuit 9, an AC signal superimposed on a positive DC bias voltage or an AC signal superimposed on a negative DC bias voltage is transmitted between the transparent electrode 2 and the transparent electrode 6. It can be applied between
上述の光導電層６．電荷蓄積層４．エレクトロ・ルミネ
ッセンス層５は積層された単分子層または単分子層累積
層であり、例えば公知のラングミュア・プロジェット法
（以下ＬＢ法と略す）（実験化学講座、１８巻 ４８９
頁〜５０７頁、丸善）によって形成される。ＬＢ法以外
にも、例えば蒸着法やＣＶＤ法により形成してもよい。Photoconductive layer 6 as described above. Charge storage layer 4. The electroluminescent layer 5 is a laminated monomolecular layer or a stacked monomolecular layer, for example, the well-known Langmuir-Prodgett method (hereinafter abbreviated as LB method) (Jikken Kagaku Course, Vol. 18, 489).
Pages 507, Maruzen). In addition to the LB method, it may be formed by, for example, a vapor deposition method or a CVD method.
ＬＢ法によれば、−分子の長さな厚さとする均一な膜を
形成することが可能であるので、薄型化が容易に達成で
きる。膜面積も、基板の大きさに応じて小面積から大面
積までほとんど制限なく可能である。またＬＢ法によれ
ば膜内の分子分布が一様であるので、高精細表示が可能
である。またＬＢ法によれば、各種の分子を積層するこ
とができる。更に分子を混合すると２種以上の分子を混
合させた膜な積層することができる。According to the LB method, it is possible to form a uniform film with a thickness as long as -molecules, so that thinning can be easily achieved. The film area can also be varied from a small area to a large area with almost no restrictions, depending on the size of the substrate. Furthermore, according to the LB method, since the molecular distribution within the film is uniform, high-definition display is possible. Further, according to the LB method, various molecules can be stacked. Furthermore, by mixing molecules, it is possible to laminate a film containing a mixture of two or more types of molecules.
なおエレクトロ・ルミネッセンス層（ＫＬ層）の代わり
に、液晶層やエレクトクロミック層を用いても同様の機
能を果すことができる。Note that the same function can be achieved by using a liquid crystal layer or an electrochromic layer instead of the electroluminescent layer (KL layer).
また、基板１に可撓性の、例えばプラスチック部材を用
いれば、各機能分子層の厚さは極めて薄いものであるか
ら、各機能部が可撓性を有し、従ってまた半導体装置全
体として可撓性をもたせることもできる。Furthermore, if a flexible material, for example a plastic material, is used for the substrate 1, the thickness of each functional molecule layer will be extremely thin, so each functional part will have flexibility, and the semiconductor device as a whole will therefore be flexible. It can also be made flexible.
次に実施例の動作について説明する。まず両電極２．乙
に直流電源８および交流電源７により直流バイアスに重
畳した交流電圧を加えておく。しかし交流の電圧のピー
クはほぼ直流バイアスと同じ位にしているのでこの状態
ではエレクトロ・ルミネッセンス層５に有効な交流電圧
が加わらず、発光はみられない。次に、例えば入力ペン
により入射光を基板１側から照射すると、光導電層６で
キャリアの発生が起こり、それが直流電界によって移動
して電荷蓄積層４に注入されトラップされる。そしてこ
のトラップキャリアは空間電荷となり、印加されている
直流バイアスを打消す様に働く。この部分はそのため、
エレクトロ・ルミネッセンス層５に実効的に交流が印加
されるようになり、発光する。Next, the operation of the embodiment will be explained. First, both electrodes 2. An AC voltage superimposed on a DC bias is applied to B by a DC power supply 8 and an AC power supply 7. However, since the peak of the alternating current voltage is approximately at the same level as the direct current bias, no effective alternating voltage is applied to the electroluminescent layer 5 in this state, and no light emission is observed. Next, when incident light is irradiated from the substrate 1 side using, for example, an input pen, carriers are generated in the photoconductive layer 6, moved by the DC electric field, injected into the charge storage layer 4, and trapped. This trapped carrier becomes a space charge and acts to cancel the applied DC bias. Therefore, this part
AC is now effectively applied to the electroluminescent layer 5, causing it to emit light.
以上説明したように本発明によれば、半導体装置の各機
能部のいずれかを有機材料を用い、またＬＢ膜によって
形成しているので、微細、高密度かつ、大面積の光情報
処理が可能である。また各機能部は積層構造であるから
多機能半導体装置のコンパクト化が図れる。さらにこれ
を用いて各種の機器に適用すれば、手軽でかつ持運び可
能性を要求される事務用または家庭用電子機器に応用す
ることができ、学習や事務の効率化を図ることができる
。As explained above, according to the present invention, any of the functional parts of the semiconductor device is formed using an organic material and an LB film, so that fine, high-density, and large-area optical information processing is possible. It is. Furthermore, since each functional section has a laminated structure, the multifunctional semiconductor device can be made more compact. Furthermore, if this is used and applied to various devices, it can be applied to office or home electronic devices that require easy and portable functionality, and it is possible to improve the efficiency of learning and office work.
第１図は、本発明の実施例に係る半導体装置の断面構造
を含む構成図である。
１・・・透明の基板
２・・・透明電極
３・・・光導電層（又はエレクトロ・ルミネッセンス層
）
４・・・電荷蓄積層
５・・・エレクトロ・ルミネッセンス層（光導電層）６
・・・透明電極
７・・・交流電源
９・・・スイッチ回路FIG. 1 is a configuration diagram including a cross-sectional structure of a semiconductor device according to an embodiment of the present invention. 1... Transparent substrate 2... Transparent electrode 3... Photoconductive layer (or electroluminescent layer) 4... Charge storage layer 5... Electroluminescent layer (photoconductive layer) 6
...Transparent electrode 7...AC power supply 9...Switch circuit
Claims (1)
れた積層構造の光導電層、電荷蓄積層およびエレクトロ
・ルミネッセンス層とを有し、前記光導電層、電荷蓄積
層およびエレクトロ・ルミネッセンス層の少なくともい
ずれか一層が有機材料の単分子膜又は単分子累積膜より
なるものであることを特徴とする半導体装置。A photoconductive layer, a charge storage layer and an electroluminescent layer of a laminated structure arranged between two conductive films, at least - of which are transparent, the photoconductive layer, the charge storage layer and the electroluminescent layer A semiconductor device characterized in that at least one of the layers is made of a monomolecular film or a monomolecular cumulative film of an organic material.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59096372A JPS60241273A (en) | 1984-05-16 | 1984-05-16 | Semiconductor device |
| US06/725,497 US4695717A (en) | 1984-04-24 | 1985-04-22 | Semi-conductor device and electronic apparatus using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59096372A JPS60241273A (en) | 1984-05-16 | 1984-05-16 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60241273A true JPS60241273A (en) | 1985-11-30 |
| JPH0533516B2 JPH0533516B2 (en) | 1993-05-19 |
Family
ID=14163135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59096372A Granted JPS60241273A (en) | 1984-04-24 | 1984-05-16 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60241273A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2722583A1 (en) * | 1994-07-15 | 1996-01-19 | Kodak Pathe | Image intensifier for X=ray and gamma-ray radiography |
| JP2008235664A (en) * | 2007-03-22 | 2008-10-02 | Nippon Seiki Co Ltd | Organic electroluminescent panel |
-
1984
- 1984-05-16 JP JP59096372A patent/JPS60241273A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2722583A1 (en) * | 1994-07-15 | 1996-01-19 | Kodak Pathe | Image intensifier for X=ray and gamma-ray radiography |
| JP2008235664A (en) * | 2007-03-22 | 2008-10-02 | Nippon Seiki Co Ltd | Organic electroluminescent panel |
| WO2008123054A1 (en) * | 2007-03-22 | 2008-10-16 | Nippon Seiki Co., Ltd. | Organic el panel |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0533516B2 (en) | 1993-05-19 |
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