JPS60231342A - Sealing method of flat package - Google Patents
Sealing method of flat packageInfo
- Publication number
- JPS60231342A JPS60231342A JP8801684A JP8801684A JPS60231342A JP S60231342 A JPS60231342 A JP S60231342A JP 8801684 A JP8801684 A JP 8801684A JP 8801684 A JP8801684 A JP 8801684A JP S60231342 A JPS60231342 A JP S60231342A
- Authority
- JP
- Japan
- Prior art keywords
- cap
- high frequency
- melting point
- low melting
- point glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000007789 sealing Methods 0.000 title claims abstract description 11
- 239000011521 glass Substances 0.000 claims abstract description 29
- 238000002844 melting Methods 0.000 claims abstract description 21
- 230000008018 melting Effects 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 8
- 230000006698 induction Effects 0.000 claims abstract description 5
- 239000000919 ceramic Substances 0.000 claims description 5
- 101150034459 Parpbp gene Proteins 0.000 claims 1
- 230000006866 deterioration Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000000956 alloy Substances 0.000 abstract description 3
- 229910045601 alloy Inorganic materials 0.000 abstract description 3
- 238000003466 welding Methods 0.000 abstract description 3
- 238000013021 overheating Methods 0.000 abstract description 2
- 238000007650 screen-printing Methods 0.000 abstract description 2
- 239000007767 bonding agent Substances 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- WTDRDQBEARUVNC-LURJTMIESA-N L-DOPA Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C(O)=C1 WTDRDQBEARUVNC-LURJTMIESA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- 239000011440 grout Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000005394 sealing glass Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明はフラ・、）パッケージのシール方法に関し、
特に例えば水晶振動子や半導体装置におけるフヲ・ソト
パッケージをガラスによりシールする場合に利用される
。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a method for sealing a package.
In particular, it is used when, for example, a crystal resonator or a semiconductor device is sealed with a glass seal.
従来の技術
半導体装置や水晶振動子等の電子部品において、半導体
素子や水晶片等の素子は、湿電等によって特性変動を起
こすため、パッケージングされている。樹脂でパッケー
ジングするものもあるが、信頼性の点でカンケースやセ
ラミフクパ、１ケージに封入したものに比較して劣るの
で、高信頼性を要求される用途には、カンケースやセフ
ミノクパ、・ノケージが用いられている。ところがカン
ケースやセラミックパ、ンケージを用いるものでは、水
分の浸入はないが、半田を用いてシールすると、フラツ
クスの蒸剣によって素子が劣化するため、ガラスシール
法が考えられている。2. Description of the Related Art In electronic components such as semiconductor devices and crystal resonators, semiconductor elements and elements such as crystal pieces are packaged because their characteristics change due to wet electricity or the like. Some products are packaged with resin, but in terms of reliability, they are inferior to those sealed in a single cage, such as a can case, a ceramic case, or a single cage. Nocage is used. However, when using a can case or a ceramic package, moisture does not infiltrate, but when sealed using solder, the element deteriorates due to flux vaporization, so a glass sealing method is being considered.
第８図は従来のガラスシール型セヲミ・ツクパリケージ
の一例のキャップを除いた平面図を示し、第４図は第８
図のＩＶ−４線に沿う断面図を示す。Figure 8 shows a plan view of an example of a conventional glass seal type Sewomi Tsukupari cage with the cap removed.
A sectional view taken along line IV-4 in the figure is shown.
図において、１はパッケージ本体で、アルミナ。In the figure, 1 is the package body, which is made of alumina.
ステアタイト等のセラミ・ツクよりなる底板２と枠体３
との間に、ガラス４を介して一対の４２合金（Ｆθ；５
８係、Ｎｉ；４２％）等よりなるリード５．６を気密に
封着したものである。７はアルミナ、ステアタイト等の
セラミ・ツクより々るキャップで、低融点ガラス８を介
して前記枠体３に気密にお１着されている。図中、二点
鎖線９は水晶片等の素子で、導電性接着剤等を介して、
前記一対のリード５．６に跨って接続固着されている。Bottom plate 2 and frame body 3 made of ceramic material such as steatite
A pair of 42 alloys (Fθ; 5
8, Ni; 42%), etc., is hermetically sealed. A cap 7 made of ceramic such as alumina or steatite is airtightly attached to the frame 3 via a low-melting glass 8. In the figure, the two-dot chain line 9 indicates an element such as a crystal piece, and the
It is connected and fixed across the pair of leads 5.6.
発明が解決しようとする問題点
ところで、上記の構成においては、ギヤ１１．プ７のシ
ール用ガラスに、リード５．６を封着するガラス４より
副Ｉ点の低い低融点ガラス８を使用しているが、低融点
カフス８の溶融のために、全体を抵抗式加熱炉で加熱す
るため、素子９が高温になったり、素子９を接続固着す
る導電性接着剤からガスが発生して、素子（９）の特性
劣化の原因になっていた。Problems to be Solved by the Invention By the way, in the above configuration, the gear 11. A low melting point glass 8 with a sub-I point lower than that of the glass 4 used to seal the lead 5.6 is used as the sealing glass for the cuff 7, but in order to melt the low melting point cuff 8, the entire body is heated by resistance. Since the element (9) is heated in a furnace, the element (9) becomes high in temperature, and gas is generated from the conductive adhesive that connects and fixes the element (9), resulting in deterioration of the characteristics of the element (9).
この発明は、キャップを金属で形成するとともに、その
下面の少なくともパ・ソヶージ本体とのシール箇所に低
融点カラスを被着しておき、前記ギヤ、プを高周波誘導
加熱方式で加熱１〜て低ｔ〃１１点ガラスを溶融させて
パリケージ本体とキャップとをシールすることを特徴と
するものである。In this invention, the cap is made of metal, a low melting point glass is adhered to at least the sealing part with the passogage body on the lower surface, and the gear and the cap are heated by a high frequency induction heating method. t〃It is characterized by melting glass at 11 points to seal the pari-cage body and the cap.
作用
上記の方法のように、高周波誘導加熱方式でギャップを
加熱すると、キャップの周辺部に高月波電流が流れて、
渦電流によるジュール熱で低ｒ、ｑ中点ガラスが溶ｍｌ
されるので、パッケージ本体とギヤリプとをシールする
ことができる。一方、リードは金属で形成されているが
、閉ループを形成していないので高周波電流は僅かしか
流れず、温度上昇も低いので、素子が高温にならないｌ
〜、素子を固着する接着剤として有機物を含むｉ’！Ａ
？ｉ性接接着剤用いても、ガスを発生することかがい
。Effect: When the gap is heated using high-frequency induction heating as in the above method, a high lunar wave current flows around the cap,
Low r, q midpoint glass melts due to Joule heat caused by eddy current.
Therefore, the package body and gear lip can be sealed. On the other hand, although the leads are made of metal, they do not form a closed loop, so only a small amount of high-frequency current flows, and the temperature rise is low, so the element does not become hot.
~, i'! containing an organic substance as an adhesive to fix the element! A
? It seems that even if you use an i-type adhesive, it will generate gas.
実施例
第１図はこの発明の一実施例方法について説明するため
のキャップを除いた平面図を示し、第２図は第１図の１
［−■線に沿う断面図を示す。図において、次の点を除
いては第３図および第４図と同様であるので、同一部分
には同一参照符号を付して、その説明を省略する。第３
図および第４図との相違点は、キャップ１０を４２合金
等の金属で形成し、その下面の少なくともパッケージ本
体とのシール箇所に、低融点ガラス１１を溶着またはス
クリーン印刷法で塗布形成したことを、この低副［点ガ
ラス１１の周囲に高周波加熱コイ）ｖ１２を配置してい
ることである。Embodiment FIG. 1 shows a plan view with the cap removed for explaining one embodiment of the method of the present invention, and FIG.
[A cross-sectional view taken along the -■ line is shown. The figure is the same as FIGS. 3 and 4 except for the following points, so the same parts are given the same reference numerals and the explanation thereof will be omitted. Third
The difference between this figure and FIG. 4 is that the cap 10 is made of metal such as 42 alloy, and a low melting point glass 11 is formed by welding or screen printing on the lower surface of the cap 10, at least in the sealing area with the package body. This is because the low secondary [high-frequency heating coil) v12 is arranged around the point glass 11.
上記の構成において、高周波加熱コイル１２に高周波電
流を流すと、高周波電界が発生し、その高周波電界内に
配置されているギャップ１０に電磁訓導によって高周波
電流が流れる。この高周波電流は、高周波特有の作用に
よってキャップ１０の周辺部に集中的に流ね、で、ジュ
ール熱を発生して、この周辺部が高温になる。このため
、その下面に溶着々いし塗布形成された低融点ガラス１
１が溶融して、枠体３とキャップ１０とを固着する。In the above configuration, when a high frequency current is passed through the high frequency heating coil 12, a high frequency electric field is generated, and the high frequency current flows through the gap 10 located within the high frequency electric field due to electromagnetic guidance. This high-frequency current flows intensively around the periphery of the cap 10 due to the action peculiar to high frequencies, and generates Joule heat, making the periphery high temperature. Therefore, the low melting point glass 1 is welded and coated on the lower surface.
1 melts and fixes the frame 3 and the cap 10.
このとき、リード５．６も金属で形成されているが、閉
ループを形成していないので、高周波電流はキャップ１
０に比較して僅かしか流れず、した ５−
かって、それほど温曳中昇しないので、素子９をリード
５，６に導電性接着剤で接続固着していても、導電性接
着剤が加熱さハ５ず、有害なガスを発生することもなく
、素子９が発生ガスによって特性劣化を起すこともない
。At this time, although the leads 5.6 are also made of metal, they do not form a closed loop, so the high frequency current flows through the cap 1.
There is only a small amount of flow compared to 0, and it does not rise that much during heating, so even if the element 9 is connected and fixed to the leads 5 and 6 with conductive adhesive, the conductive adhesive will not heat up. Furthermore, no harmful gas is generated, and the characteristics of the element 9 are not deteriorated by the generated gas.
ｈお、上記実施例では、ギヤ、ツブ】０の下面の周辺部
のみに低副１点ガラス１１を溶着な２いし塗布する場合
について説明したが、ギャップ１０の下面全面に低融点
ガラス１１を被着してもよい。そのような場合、低融点
ガラス１１の使用量は増大するが、低融点ガラス１１の
形成時の目合せは不要となり、量産に適するだけで々く
、キャップ１０の錆の発生等による素子の特性劣化を防
ぐことができる。In the above embodiment, the case where the low secondary point glass 11 is applied without welding 2 or applied only to the periphery of the lower surface of the gear and the knob 0 is explained, but the low melting point glass 11 is applied to the entire lower surface of the gap 10. It may be coated. In such a case, the amount of low melting point glass 11 used increases, but alignment during the formation of low melting point glass 11 becomes unnecessary, making it suitable for mass production, and the characteristics of the element due to the occurrence of rust on the cap 10, etc. Deterioration can be prevented.
発明の効果
この発明は以」二のように、ガラスを介して一対のリー
ドが気密に封着されたセラミ・ツク製のフラウトパッケ
ージ本体に低融点ガラスを介してギヤリプをシールする
方法において、前記キヤ、フプを金属で形成するととも
に、その下面の少なくとも−６＝
シール箇所に低融点ガラスを被着しておき、前記キヤツ
ジを高周波誘導加熱方式で加熱して低融点ガラスを溶融
させてフラ・ソトパソケージ本体とギヤ、プとをシール
するものであるから、キヤツジのみが集中的に加熱され
て、低融点ガラスでシールできるので、素子や素子を固
着している接着斉４等はほとんど加熱されず、過熱や発
生ガスにより特性劣化を起こすことが々く、高信頼性の
電子部品が得られる。Effects of the Invention The present invention provides a method for sealing a gear lip via a low melting point glass to a grout package body made of ceramic in which a pair of leads are hermetically sealed via a glass. The cap and the cap are made of metal, and a low-melting point glass is adhered to at least the sealing area on the lower surface of the cap, and the cap is heated using a high-frequency induction heating method to melt the low-melting point glass and flash.・Because it seals the SotoPaso cage body, gears, and plates, only the cage is heated intensively and can be sealed with low-melting glass, so the elements and the adhesives that secure the elements are hardly heated. First, characteristics often deteriorate due to overheating or generated gas, and highly reliable electronic components can be obtained.
第１図はこの発明の一実施例のフラ、ドパ、ソケージの
シール方法について説明するためのギヤ、。
プを除いた平面図、第２図は第１図の■−■線に沿う断
面図である。
第３図はこの発明の背景となるフラ、ソトパッケージの
キヤ、ツブを除いた平面図、第４図は第３図のＩＶ−４
線に沿う断面図である。
１・・・フラットパッケージ本体、
２・・・・・・底板、
３・・・・・枠体、
４−１７”ラス
５．６・・・・・リード、
９・・・・・・・・・・素子、
１０・・・・・・・・・・・キヤツジ、１１・・・・・
・・・・・・低融点ガラス、１２・・・・・・・・高周
波加熱コイ／ｖ。FIG. 1 shows a gear for explaining a sealing method for a flare, dopa, and socage according to an embodiment of the present invention. FIG. 2 is a cross-sectional view taken along the line ■-■ in FIG. 1. Fig. 3 is a plan view of the background of this invention, excluding the fla, sotopackage's cover and knob, and Fig. 4 is IV-4 of Fig. 3.
It is a sectional view along a line. 1... Flat package body, 2... Bottom plate, 3... Frame, 4-17" lath 5.6... Lead, 9......・・Element, 10・・・・・・・・・・Katsuji, 11・・・・
......Low melting point glass, 12......High frequency heating coil/v.
Claims (1)
のフラットパリケージ本体に低融点ガラスを介してギヤ
、ツブをシールする方法において、前記ギヤ・７プを金
属で形成するとともに、その下面の少なくともシール箇
所に低融点ガラスを被着しておき、前記ギヤ、ツブを高
周波誘導加熱方式で加熱して低融点ガラスを溶融させて
フラ・フトパッケージ本体とキャップとをシールするこ
とを特徴とするフラットパッケージのシール方法。In a method of sealing a gear and a knob through a low melting point glass to a flat pari cage body made of a ceramic rift in which a lead is hermetically sealed through a glass, the gear 7 is formed of metal, and the lower surface of the gear is sealed. A low melting point glass is adhered to at least the sealing area, and the gear and the knob are heated using a high frequency induction heating method to melt the low melting point glass and seal the flat package body and the cap. How to seal flat packages.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8801684A JPS60231342A (en) | 1984-04-30 | 1984-04-30 | Sealing method of flat package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8801684A JPS60231342A (en) | 1984-04-30 | 1984-04-30 | Sealing method of flat package |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60231342A true JPS60231342A (en) | 1985-11-16 |
Family
ID=13931037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8801684A Pending JPS60231342A (en) | 1984-04-30 | 1984-04-30 | Sealing method of flat package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60231342A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0425796A2 (en) * | 1989-10-31 | 1991-05-08 | International Business Machines Corporation | Apparatus for and method using the apparatus for the encapsulation of electronic modules |
-
1984
- 1984-04-30 JP JP8801684A patent/JPS60231342A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0425796A2 (en) * | 1989-10-31 | 1991-05-08 | International Business Machines Corporation | Apparatus for and method using the apparatus for the encapsulation of electronic modules |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5996636A (en) | Electron tube and method of producing same | |
| JP2014175998A (en) | Crystal oscillator | |
| JPS60231342A (en) | Sealing method of flat package | |
| JP3413522B2 (en) | Package for electronic components | |
| JP2003224223A (en) | Seal cap for ceramic package | |
| JPH0319226Y2 (en) | ||
| JP2002026679A (en) | Package for piezoelectric vibration device | |
| JP5171228B2 (en) | Crystal device for surface mounting | |
| JPS60249349A (en) | Sealing method for flat package | |
| JPH10256415A (en) | Structure of package of piezoelectric device | |
| JP2005198197A (en) | Surface mount crystal oscillator | |
| JP2007318209A (en) | Surface mounted piezoelectric vibrating device, and manufacturing method thereof | |
| JPH043609A (en) | Oscillator | |
| JP2008193581A (en) | Piezoelectric vibrator, and manufacturing method thereof | |
| JPH0142354Y2 (en) | ||
| JP2007173973A (en) | Manufacturing method of crystal device | |
| JPS60223143A (en) | Packaging method | |
| JPH11307661A (en) | Electronic component package and manufacture thereof | |
| JPH09186547A (en) | Structure for surface mount piezoelectric component | |
| JPS60223144A (en) | Packaging method | |
| JPH0249727Y2 (en) | ||
| JPH036028Y2 (en) | ||
| JP2007202095A (en) | Piezoelectric device | |
| JPH0445291Y2 (en) | ||
| JPH0217482Y2 (en) |