JPS6022722A - Thin film magnetic head - Google Patents
Thin film magnetic headInfo
- Publication number
- JPS6022722A JPS6022722A JP12872183A JP12872183A JPS6022722A JP S6022722 A JPS6022722 A JP S6022722A JP 12872183 A JP12872183 A JP 12872183A JP 12872183 A JP12872183 A JP 12872183A JP S6022722 A JPS6022722 A JP S6022722A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- core
- thin
- alloy
- amorphous alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、薄膜磁気ヘッドに係り、特にそれのコア薄膜
の材質に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film magnetic head, and particularly to the material of the core thin film thereof.
薄膜磁気記録ヘッドは、非磁性材からなる基板上に第１
のコア薄膜と、非磁性材薄膜と、第２のコア薄膜とがス
パッタリングや蒸着などによって積層状態に形成された
ものから構成されている。A thin film magnetic recording head has a first magnetic recording head on a substrate made of a non-magnetic material.
The core thin film, a nonmagnetic material thin film, and a second core thin film are formed in a laminated state by sputtering, vapor deposition, or the like.
この薄膜磁気記録ヘッドは薄膜磁気再生ヘッドと対にな
って薄膜磁気ヘッドを構成し、例えば電子計算機の記憶
装置などに用いられる。薄膜磁気記録ヘッドにおいては
記録効率を高めるために第１および第２のコア）Ｗｌじ
冒こ５高、こ磁ヰで亮い飽和磁束密度を有する軟磁性材
料を用いることが必要である。This thin film magnetic recording head is paired with a thin film magnetic reproducing head to form a thin film magnetic head, which is used, for example, in a storage device of an electronic computer. In a thin film magnetic recording head, in order to increase the recording efficiency, it is necessary to use a soft magnetic material having a high saturation magnetic flux density for the first and second cores.
従来、この種磁気ヘッドの第１および第２のコア薄膜と
して例えばパーマロイなどが用いられていたが、このも
のは飽和磁束密度が低い。低飽和磁束密度であると記録
時にコア薄膜が磁気飽和してしまい、特にメタルテープ
やクロムテープなどのような飽和磁束密度の高い磁気記
録媒体に対して信号を記録する場合、記録効率が悪い。Conventionally, permalloy or the like has been used as the first and second core thin films of this type of magnetic head, but this material has a low saturation magnetic flux density. If the saturation magnetic flux density is low, the core thin film will become magnetically saturated during recording, resulting in poor recording efficiency, especially when recording signals on a magnetic recording medium with a high saturation magnetic flux density, such as a metal tape or chrome tape.
そのため、コイルのターン数を増やしたり、記録電流を
増大したりして記録効率の低下を抑制することが考えら
れる。しかしコイルのターン数を増やすことは薄膜磁気
ヘッドの構造上困難で、３〜５タ一ン程度に制限され、
十分な効果が得られない。一方、記録電流を増大すると
発熱量が大きくなり、断線を生じたりコア薄膜の磁性劣
化を生じる。Therefore, it is possible to suppress the decrease in recording efficiency by increasing the number of turns of the coil or increasing the recording current. However, increasing the number of turns in the coil is difficult due to the structure of the thin film magnetic head, and is limited to 3 to 5 turns.
Not enough effect. On the other hand, when the recording current is increased, the amount of heat generated increases, causing wire breakage and magnetic deterioration of the core thin film.
本発明者らは、スパッタリングなどによって得られるア
モルファス合金薄膜について種々研究した結果、コバル
ト（Ｇｏ）を主成分とし、少量のハフニウム（Ｈｆ）と
タンタル（Ｔ ａ ）を添加したＣ ｏ −Ｈｆ −Ｔ
ａの３成分系のアモルファス合金からなる薄膜が、薄
膜磁気ヘッドのコア薄膜として非常に好適であることを
見出した。As a result of various studies on amorphous alloy thin films obtained by sputtering etc., the present inventors found that Co-Hf-T, which has cobalt (Go) as the main component and added small amounts of hafnium (Hf) and tantalum (Ta),
It has been found that a thin film made of a three-component amorphous alloy is very suitable as a core thin film of a thin-film magnetic head.
基板に結晶化ガラスを用い、コバルトディスク（直径１
０１．６ｍｍ、厚さ５ｍｍ）上にハフニウムのペレット
とタンタルのペレット（いずれのペレットも縦１０ｍｍ
、横Ｌｏａｍ、厚さ１ ｍｍ）を中心より放射状に交互
に配置し、ターゲット上のペレットの数を調整すること
により合金組成が変えられるようにする。そして真空度
がＩ Ｘ １０−ＧＴｏ ｒ ｒ以下の高真空にし、ア
ルゴンガスの雰囲気中で、高周波電力２Ｗ／ＣＩＩ＋２
でスパッタリングを行ない、基板上にコバルトを主成分
とするＣ ｏ −Ｈｆ−Ｔａの３成分系の、アモルファ
ス合金薄膜を作成することができる。このようにし°Ｃ
作成された各種組成の合金試料が後述の各特性試験に使
用される。Using crystallized glass as the substrate, a cobalt disk (diameter 1
Hafnium pellets and tantalum pellets (both pellets are 10 mm in length) on
, horizontal loam, thickness 1 mm) are arranged alternately radially from the center, and the alloy composition can be changed by adjusting the number of pellets on the target. Then, the degree of vacuum was set to a high vacuum of less than I x 10-GTor r, and a high frequency power of 2W/CII + 2 was applied in an argon gas atmosphere.
By performing sputtering, it is possible to form an amorphous alloy thin film of a three-component system of Co-Hf-Ta, the main component of which is cobalt, on the substrate. Do it like this °C
The prepared alloy samples with various compositions are used for each characteristic test described below.
第１図は、後記の合金組成表において合金中のＴａ含有
率Ｙが常に４．５原子％になるようにして、Ｈｆ含有率
Ｘを種々変えた場合の磁気特性図である。FIG. 1 is a magnetic characteristic diagram when the Hf content X is varied while the Ta content Y in the alloy is always 4.5 atomic % in the alloy composition table described later.
なお図中において曲線Ｂｓは飽和磁束密度９曲線μｅは
周波数Ｉ Ｍ Ｈｚにおける困難軸方向の透磁率９曲線
Ｈｅは困難軸方向の保磁力である。この図から明らかな
ように−Ｈｆ含有率が０原子％のＣｏ −Ｔ ａ ２成
分系合金は、Ｂｓは高いが、Ｈｃが高過ぎ、μ８が低い
。これにＨｆを少量添加するとＨｅが極端に下がり、Ｈ
ｅは逆に高くなる。なお、Ｈｆの含有率がある程度以上
になると。In the figure, the curve Bs is the saturation magnetic flux density 9, the curve μe is the magnetic permeability in the hard axis direction at the frequency I MHz, and the curve He is the coercive force in the hard axis direction. As is clear from this figure, the Co-Ta binary alloy with a -Hf content of 0 atomic % has high Bs, but too high Hc and low μ8. When a small amount of Hf is added to this, He drops extremely, and H
On the contrary, e becomes higher. Note that when the Hf content exceeds a certain level.
Ｈｅは高くなり、Ｈｅは低くなる。一方、Ｂｓは極端で
はないがＨｆの含有率の増大とともに低下する傾向にあ
る。He becomes high and He becomes low. On the other hand, Bs tends to decrease as the Hf content increases, although it is not extreme.
このような特性傾向のなかで、Ｂｓを高く維持したまま
、Ｈｅを下げ、高μｅにするためには、Ｈｆの含有率Ｘ
を１ｉ子％以上でかつ５原子％未満の範囲、好ましくは
１．５〜３原子％の範囲に規制する必要がある。このこ
とはＴａ含有率Ｙを若干変化させても同様である。Given these characteristic trends, in order to lower He and increase μe while maintaining Bs high, the Hf content X
It is necessary to control the content to a range of at least 1 atomic % and less than 5 atomic %, preferably in the range of 1.5 to 3 atomic %. This holds true even if the Ta content Y is slightly changed.
第２図は、前記合金組成表において合金中のＨｆ含有率
Ｘが常に２．２原子％になるようにして、Ｔａ含有率Ｙ
を種々変えた場合の磁気特性図である。FIG. 2 shows that in the alloy composition table, the Hf content X in the alloy is always 2.2 atomic %, and the Ta content Y
It is a magnetic characteristic diagram when changing variously.
この図から明らかなように、Ｔａ含有率が０原子％のＣ
ｏ−Ｈｆ２成分系合金も前述と同様に、Ｂｓは高いが、
Ｈｃが高過ぎ、Ｈｅが低い。これにＴａを少量添加する
ことによりＨｅが極端に下がり、Ｈｅが逆に高くなる。As is clear from this figure, C with a Ta content of 0 at%
As mentioned above, the o-Hf binary alloy also has high Bs, but
Hc is too high and He is low. By adding a small amount of Ta to this, He is extremely reduced, and on the contrary, He becomes high.
なお、Ｔａの含有率がある程度以上になると、Ｈｃは高
くなり、μ８は低くなる。一方、Ｂｓは極端ではないが
Ｔａの含有率の増大とともに低下する傾向がある。Note that when the Ta content exceeds a certain level, Hc becomes high and μ8 becomes low. On the other hand, Bs tends to decrease as the Ta content increases, although it is not extreme.
このような特性傾向のなかで、Ｂｓを高く維持したまま
、Ｈｅを下げ、高μｅにするためには、Ｔａの含有率Ｙ
を４〜ｌＯ原子％、好ましくは６〜８原子％の範囲に規
制する必要がある。このことはＨｆ含有率Ｘを若干変化
させても同様である。Given these characteristic trends, in order to lower He and increase μe while maintaining Bs high, the Ta content Y
It is necessary to regulate the amount of oxide in the range of 4 to 10 atomic %, preferably 6 to 8 atomic %. This holds true even if the Hf content X is slightly changed.
第３図は、本発明に係るＧｏ（９３，３原子％）−Ｈｆ
（２，２原子％）−Ｔａ （４，５原子％）の３成分
系アモルファス合金（曲線Ａ）と、ｃ。FIG. 3 shows Go (93.3 atomic%)-Hf according to the present invention.
(2,2 atomic %)-Ta (4,5 atomic %) ternary amorphous alloy (curve A) and c.
（９７，８原子％）、−Ｈｆ （２，２ｉ子％）の２成
分系アモルファス合金（曲線Ｂ）の各周波数におけるＨ
ｅを比較して示す図である。この図からも明らかなよう
に、本発明のアモルファス合金は各周波数においても常
に高い周波数を有し、広い周波数領域において特性が安
定している。Hf (97.8 atomic%) and -Hf (2.2i atomic%) at each frequency of the binary amorphous alloy (curve B)
It is a figure which compares and shows e. As is clear from this figure, the amorphous alloy of the present invention always has a high frequency at each frequency, and its characteristics are stable in a wide frequency range.
本発明に係るＧｏ−Ｈｆ−Ｔａの３成分系アモルファス
合金は誘導磁気異方性が出やすいため、高周波特性を考
慮して、アモルファス合金の磁化困難軸方向をコア薄膜
の動作方向に向けることができる。ところでＧｏ−Ｈｆ
−Ｔａの３成分系合金は、スパッタリング直後の薄膜の
異方性磁界Ｈｋは大きい。この異方性磁界を小さくする
手段について種々検討した結果、コア薄膜として形成さ
れた前記３成分系のアモルファス合金薄膜を回転磁界中
で熱処理する方法が有効であることを見出した。この回
転磁界中の熱処理で、温度は３００〜４ｏｏ（’ｃ）、
回転速度は−１０〜２０ （ｒ、ｐ、ｍ、）、磁界の強
さは１００（Ｏｓ）以上、処理時間は３時間以上が適当
である。例えば温度を３５０（’Ｃ）、回転速度を１０
（ｒ、ｐ、ｍ、）磁界の強さを１００（Ｏｅ）、処理
時間を３時間に設定して、スパッタリングによって形成
したコア薄膜を処理すれば、異方性磁界Ｈｋを約４（Ｏ
ｓ）程度まで下げることができる。Since the Go-Hf-Ta three-component amorphous alloy according to the present invention tends to exhibit induced magnetic anisotropy, it is necessary to orient the difficult axis of magnetization of the amorphous alloy to the operating direction of the core thin film in consideration of high frequency characteristics. can. By the way, Go-Hf
In the -Ta ternary alloy, the anisotropic magnetic field Hk of the thin film immediately after sputtering is large. As a result of various studies on means for reducing this anisotropic magnetic field, it has been found that a method of heat-treating the three-component amorphous alloy thin film formed as the core thin film in a rotating magnetic field is effective. In this heat treatment in a rotating magnetic field, the temperature is 300~4oo('c),
Appropriately, the rotation speed is -10 to 20 (r, p, m,), the strength of the magnetic field is 100 (Os) or more, and the processing time is 3 hours or more. For example, the temperature is 350 ('C) and the rotation speed is 10
(r, p, m,) If the core thin film formed by sputtering is processed by setting the magnetic field strength to 100 (Oe) and the processing time to 3 hours, the anisotropic magnetic field Hk will be approximately 4 (Oe).
s).
第４図は、本発明の実施例に係る薄膜磁気記録ヘッドの
一部を断面にした斜視図である。ガラスやシリコンなど
の非磁性材からなる基板１の上には、最初第１のコア薄
膜２が形成され、その上に非磁性材の絶縁薄膜３．導電
薄膜４ならびに絶縁薄膜５を介して第２のコア薄膜６が
形成される。FIG. 4 is a partially sectional perspective view of a thin film magnetic recording head according to an embodiment of the present invention. A first core thin film 2 is first formed on a substrate 1 made of a non-magnetic material such as glass or silicon, and an insulating thin film 3 made of a non-magnetic material is formed thereon. A second core thin film 6 is formed via the conductive thin film 4 and the insulating thin film 5.
これら第１のコア薄膜２．絶縁薄膜３．導電薄膜４、絶
縁薄膜５ならびに第２のコア薄膜６は、スパッタリング
などの成膜技術によって順次所定の厚さに形成される。These first core thin films 2. Insulating thin film 3. The conductive thin film 4, the insulating thin film 5, and the second core thin film 6 are sequentially formed to a predetermined thickness by a film forming technique such as sputtering.
なお、４ａ、４ｂは外部接続用端子部である。Note that 4a and 4b are terminal portions for external connection.
前記第１のコア薄膜２ならびに第２のコア薄膜６ ｉ；
ｔ、 Ｇ ｏ −Ｈｆ −Ｔ ａの３成分系アモルファ
ス合金薄膜からなりＣＯの含有率は９３．３原子％。the first core thin film 2 and the second core thin film 6i;
It is made of a three-component amorphous alloy thin film of T, Go - Hf - Ta, and the CO content is 93.3 at%.
Ｈｆの含有率は２．２原子％、Ｔａの含有率は４．５ｍ
子％であり、前述の条件下において回転磁界中で熱処理
される。Hf content is 2.2 at%, Ta content is 4.5m
% and is heat treated in a rotating magnetic field under the conditions described above.
本発明は前述のように薄膜磁気ヘッドのコア薄膜を、コ
バルトを主成分とし、それにハフニウムとタンタルを少
量添加した３成分系アモルファス合金で構成したことを
特徴とするものである。この３成分系アモルファス合金
は、高い飽和磁束密度ど透磁率とを有しているから、磁
気ヘッドの記録効率および再生′＠率を高めることがで
きる。As described above, the present invention is characterized in that the core thin film of the thin film magnetic head is composed of a three-component amorphous alloy containing cobalt as a main component and small amounts of hafnium and tantalum added thereto. Since this three-component amorphous alloy has a high saturation magnetic flux density and magnetic permeability, it is possible to improve the recording efficiency and reproduction rate of the magnetic head.
第１１２Ｉは本発明に係るＣ ｏ Ｈｆ −Ｔ ａ系ア
モルファス合金中のＨｆ含有率と各種磁気特性との関係
を示す特性図、第２図は前記合金中のＴ’ ａ含有率と
各種磁気特性との関係を示す特性図、第３図は前記公金
と比較例の合金との各周波数における磁気特性図、第４
図は本発明の実施例に係る薄膜磁気ヘッドの一部を断面
にした斜視図である。
１・・・基板、２・・・第１のコア薄膜、３・・・絶＠
薄膜、４・・・導電薄膜、５・・・絶縁薄膜、６・・・
第２のコア薄膜。
周左佐（ＭＨｚ）No. 112I is a characteristic diagram showing the relationship between the Hf content and various magnetic properties in the Co Hf -Ta amorphous alloy according to the present invention, and FIG. 2 is a characteristic diagram showing the relationship between the T'a content and various magnetic properties in the alloy. FIG. 3 is a magnetic characteristic diagram at each frequency of the public money and the comparative example alloy, and FIG. 4 is a characteristic diagram showing the relationship between
The figure is a partially sectional perspective view of a thin film magnetic head according to an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Substrate, 2... First core thin film, 3... Absolute @
Thin film, 4... Conductive thin film, 5... Insulating thin film, 6...
Second core thin film. Shuzasa (MHz)
Claims (1)
性材薄膜と、第２のコア薄膜とが積層状態で形成される
薄膜磁気番録ヘッドにおいて、前記コア？ｔ［Ｅ４が、
コバルトを主成分とし、夕景のハフニウムとタンタルと
を添加した３成分系のアモルファス合金で構成されてい
ることを特徴とする薄膜磁気ヘッド。 （２、特許請求の範囲第（１）項記載において、前記ハ
フニウムの岩有牢が１原子％以上でかつ５７Ｍ子％未満
、タンタルの含有率が４ｇ子％以上でかっ１０原子％以
下に規制されていることを特徴とする薄膜磁気ヘッド。 （３）特許請求の範囲第（１）項記載において、前記コ
ア薄膜として形成されたコバルト−ハフニウム−タンタ
ルの３成分系アモルファス合金薄膜が回転磁界中で熱処
理されたことを特徴とする薄膜磁気ヘッド。[Scope of Claims] (1) A thin film magnetic recording head in which a first core thin film, a nonmagnetic material thin film, and a second core thin film are formed in a laminated state on a substrate made of a nonmagnetic material, core? t[E4 is
A thin film magnetic head characterized in that it is composed of a three-component amorphous alloy containing cobalt as a main component and adding hafnium and tantalum. (2. In claim (1), the hafnium content is regulated to be 1 atomic % or more and less than 57 M %, and the tantalum content is regulated to be 4 gram % or more and 10 atomic % or less. (3) In claim (1), the ternary amorphous alloy thin film of cobalt-hafnium-tantalum formed as the core thin film is exposed to a rotating magnetic field. A thin film magnetic head characterized by being heat-treated.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12872183A JPS6022722A (en) | 1983-07-16 | 1983-07-16 | Thin film magnetic head |
| KR1019840002876A KR890003043B1 (en) | 1983-07-16 | 1984-05-25 | Magnetic head |
| US06/630,900 US4641213A (en) | 1983-07-16 | 1984-07-16 | Magnetic head |
| DE19843426117 DE3426117A1 (en) | 1983-07-16 | 1984-07-16 | MAGNETIC HEAD |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12872183A JPS6022722A (en) | 1983-07-16 | 1983-07-16 | Thin film magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6022722A true JPS6022722A (en) | 1985-02-05 |
Family
ID=14991784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12872183A Pending JPS6022722A (en) | 1983-07-16 | 1983-07-16 | Thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6022722A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01282713A (en) * | 1987-11-09 | 1989-11-14 | Hitachi Ltd | Thin-film magnetic head and magnetic disk device |
| US4943883A (en) * | 1987-11-09 | 1990-07-24 | Hitachi, Ltd. | Quarternary amorphous magnetic alloy thin film and magnetic head including same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58185742A (en) * | 1982-04-21 | 1983-10-29 | Showa Denko Kk | Amorphous magnetic alloy magnetic material |
-
1983
- 1983-07-16 JP JP12872183A patent/JPS6022722A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58185742A (en) * | 1982-04-21 | 1983-10-29 | Showa Denko Kk | Amorphous magnetic alloy magnetic material |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01282713A (en) * | 1987-11-09 | 1989-11-14 | Hitachi Ltd | Thin-film magnetic head and magnetic disk device |
| US4943883A (en) * | 1987-11-09 | 1990-07-24 | Hitachi, Ltd. | Quarternary amorphous magnetic alloy thin film and magnetic head including same |
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