JPS60224284A - Solar battery cell having reverse-flow preventing diode - Google Patents
Solar battery cell having reverse-flow preventing diodeInfo
- Publication number
- JPS60224284A JPS60224284A JP59080952A JP8095284A JPS60224284A JP S60224284 A JPS60224284 A JP S60224284A JP 59080952 A JP59080952 A JP 59080952A JP 8095284 A JP8095284 A JP 8095284A JP S60224284 A JPS60224284 A JP S60224284A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light shielding
- solar battery
- reverse
- flow preventing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 230000002265 prevention Effects 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000006378 damage Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/142—Energy conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は太陽電池付き太陽電池セルに関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a solar cell with a solar cell.
アモルファスシリコンを用いた太陽電池はセル面積に関
係なく通常α５〜０．７ Ｖ／ｃｅＬＡであり、民生電
子機器用電源電圧の１．５ｖにするために従来、セルを
第１図示のようにシリーズに集積して必要電圧を得るよ
うにしている。そして太陽電池を用いた電源回路の構成
においては、逆流防止用のダイオードを必ず回路中に入
れ、蓄電池からの逆流による防止と、逆バイアスによる
太陽電池セルの劣化ないし破壊の防止をはかつていた。Solar cells using amorphous silicon usually have α5 to 0.7 V/ceLA regardless of the cell area, and in order to achieve the power supply voltage of 1.5 V for consumer electronics, conventionally cells are connected in series as shown in the first figure. to obtain the required voltage. In the configuration of power supply circuits using solar cells, a backflow prevention diode was always included in the circuit to prevent backflow from the storage battery and to prevent deterioration or destruction of the solar cells due to reverse bias.
第２図にこうした従来例を示し、１は太陽電池、２は逆
流防止用ダイオード、３は蓄電池、４は過充電防止用の
ツェナーダイオード、５は負荷である。FIG. 2 shows such a conventional example, in which 1 is a solar cell, 2 is a backflow prevention diode, 3 is a storage battery, 4 is a Zener diode for overcharging prevention, and 5 is a load.
こうした従来例において、太陽電池を時計などの電源と
して利用する場合、容量を大きくとるためには、第１図
示の集積セルが多数枚必要となシ、それにともなって逆
流防止用ダイオードをそれぞれの集積セルに対応して設
けなければならず、°構成が複雑となるのみならず、デ
ザイン上の配置問題が生ずるなどの欠点があった。In such conventional examples, when solar cells are used as a power source for watches, etc., in order to increase the capacity, a large number of integrated cells are required, as shown in Figure 1. It has to be provided in correspondence with each cell, which not only complicates the configuration but also poses design placement problems.
この発明は逆流防止用のダイオードを太陽電池セルと一
体的に構成することにより、上記従来技術における欠点
を解決するものである。The present invention solves the above-mentioned drawbacks of the prior art by integrally configuring a backflow prevention diode with a solar cell.
つぎにこの発明の実施例について説明する。第６．４図
でガラス製の透明基板乙に透明の下部電極７〜１１が形
成されており、その上にＰｆＪ、アモルファス１２、ｉ
ｆｉアモルファス１３．ｎｆｉアモルファス１４がプラ
ス−ｖ ＯＶ Ｄ （ｃｈｅｍｉｃａｌｖａｐｏｒ ｄ
ｅｐｏｓｉｔｉｏｎ ） 法に、ＣＪ）順に形成され、
ｐｉｎｉ合のアモルファスシリコン層１５が設けられる
。その上にさらに上部電極１６〜２０が設けられる。こ
れら上部電極１６〜２０は上記下部電極７〜１１とそれ
ぞれ対向して設けられている。Next, embodiments of the invention will be described. In Figure 6.4, transparent lower electrodes 7 to 11 are formed on a glass transparent substrate A, and PfJ, amorphous 12, i
fi amorphous13. nfi amorphous 14 plus-v OV D (chemical vapor d
eposition ) method, CJ) is formed in order,
An amorphous silicon layer 15 with a pin-concentration is provided. Upper electrodes 16-20 are further provided thereon. These upper electrodes 16-20 are provided facing the lower electrodes 7-11, respectively.
そして上部電極１６，１７．１８［それぞれ右側の下部
電極ｄ、９．１０と接続され、上部電極１９は右端の上
部電極２０と接続されている。両端の下部電極７．１１
にはリード端子７ａ、１１ａが設けられている。上記透
明基板６の背面、すなわち、光入射側には右端の対向電
極１１．２０に対応セる部分に金属皮膜などよりなる遮
光膜２１が設けられる。これにより、アモルファスシリ
コン層１５ｉＣ受光部分２２と遮光部分２６とに分けら
れ、この受光部分で太陽電池素子２４を形成し、遮光部
分で逆流防止用ダイオード２５を形成する。The upper electrodes 16, 17 and 18 are connected to the lower electrodes d and 9.10 on the right side, respectively, and the upper electrode 19 is connected to the upper electrode 20 on the right side. Lower electrodes 7.11 at both ends
are provided with lead terminals 7a and 11a. On the back surface of the transparent substrate 6, that is, on the light incident side, a light shielding film 21 made of a metal film or the like is provided at a portion corresponding to the counter electrode 11.20 at the right end. As a result, the amorphous silicon layer 15iC is divided into a light-receiving portion 22 and a light-blocking portion 26, the light-receiving portion forming a solar cell element 24, and the light-blocking portion forming a backflow prevention diode 25.
すなわちｐｉｎ半導体は原理的にｐｎ接合を有するため
、遮光状態においてにダイオード特性を有することにな
る。That is, since a pin semiconductor has a pn junction in principle, it has diode characteristics in a light-shielded state.
なおこのダイオードは固有抵抗のため、約［Ｌ４〜α６
ｖ程度の電圧降下を生ずる。したがって、必要とされる
電流と端子電圧に応じて、セル面積集積セル数、および
遮光部分の面積を決めればよい。Note that this diode has a specific resistance of approximately [L4~α6
This results in a voltage drop of approximately 1. Therefore, the cell area, the number of integrated cells, and the area of the light shielding portion may be determined depending on the required current and terminal voltage.
上述の実施例では遮光膜２１は透明基板６の背面に設け
られているが、セル構成と同一面に絶縁膜で設けてもよ
い。In the above embodiment, the light shielding film 21 is provided on the back surface of the transparent substrate 6, but it may be provided as an insulating film on the same surface as the cell structure.
上述の構成エリなる本発明の逆流防止用ダイオード付き
太陽電池セルによれば、アモルファスシリコン太陽電池
と逆流防止用ダイオードとが一体的に構成できるので、
集積型太陽上池の回路構成が容易になる。According to the solar cell with a backflow prevention diode of the present invention having the above configuration, the amorphous silicon solar cell and the backflow prevention diode can be integrally configured.
The circuit configuration of an integrated solar pond becomes easy.
第１図は従来の太陽電池セルの平面図、第２図は従来の
太陽電池を用いた電源回路図、第３図は本発明の実殉例
の平面図、第４図１１第５図の実施例の断面説明図であ
る。
１・・・・・・基板
１５・・・・・・アモルファスシリコンＩ＠２１・・・
・・・遮光膜 ２２・・・・・・受光部分２６・・・・
・・遮光部分 ２４・・・・・・太陽電池素子２５・・
・・・・逆流防止用ダイオード以 上
出願人 株式会社精 工 舎
第１図
第２図Fig. 1 is a plan view of a conventional solar cell, Fig. 2 is a power supply circuit diagram using a conventional solar cell, Fig. 3 is a plan view of an actual example of the present invention, Fig. 4, 11, and 5. It is a cross-sectional explanatory view of an example. 1...Substrate 15...Amorphous silicon I@21...
... Light shielding film 22 ... Light receiving part 26 ...
... Light shielding part 24 ... Solar cell element 25 ...
...Backflow prevention diode and above Applicant Seikosha Co., Ltd. Figure 1 Figure 2
Claims (2)
モルファスシリコン層に受光部分と遮光部分とケ設け、
上記受光部分で太陽電池素子を形成し、上記遮光部分で
逆流防止用ダイオードを形成してなる逆流防止用ダイオ
ード付き太陽・電池セル。(1) providing an amorphous silicon layer on the substrate i, providing a light-receiving portion and a light-shielding portion on the amorphous silicon layer;
A solar/battery cell with a backflow prevention diode, wherein the light-receiving portion forms a solar cell element, and the light-shielding portion forms a backflow prevention diode.
記透明基板の一部に遮光膜を設けてダイオードを形成し
てなる特許請求の範囲第１項の逆流防止用ダイオード付
き太陽電池セル。(2) A solar cell with a backflow prevention diode according to claim 1, wherein an amorphous silicon layer is provided on a transparent substrate, and a light shielding film is provided on a part of the transparent substrate to form a diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59080952A JPS60224284A (en) | 1984-04-20 | 1984-04-20 | Solar battery cell having reverse-flow preventing diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59080952A JPS60224284A (en) | 1984-04-20 | 1984-04-20 | Solar battery cell having reverse-flow preventing diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60224284A true JPS60224284A (en) | 1985-11-08 |
Family
ID=13732836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59080952A Pending JPS60224284A (en) | 1984-04-20 | 1984-04-20 | Solar battery cell having reverse-flow preventing diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60224284A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6413160U (en) * | 1987-07-14 | 1989-01-24 | ||
| DE4039945A1 (en) * | 1990-12-14 | 1992-06-17 | Phototronics Solartechnik Gmbh | Solar cell module combining cells with diodes in block - mounts layers on common substrate by thin film technique with separating troughs cutting through all layers |
| KR100416139B1 (en) * | 2001-04-04 | 2004-01-31 | 삼성에스디아이 주식회사 | Solar battery module |
-
1984
- 1984-04-20 JP JP59080952A patent/JPS60224284A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6413160U (en) * | 1987-07-14 | 1989-01-24 | ||
| DE4039945A1 (en) * | 1990-12-14 | 1992-06-17 | Phototronics Solartechnik Gmbh | Solar cell module combining cells with diodes in block - mounts layers on common substrate by thin film technique with separating troughs cutting through all layers |
| KR100416139B1 (en) * | 2001-04-04 | 2004-01-31 | 삼성에스디아이 주식회사 | Solar battery module |
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