JPS60218847A - Method of plasma treatment - Google Patents
Method of plasma treatmentInfo
- Publication number
- JPS60218847A JPS60218847A JP7406084A JP7406084A JPS60218847A JP S60218847 A JPS60218847 A JP S60218847A JP 7406084 A JP7406084 A JP 7406084A JP 7406084 A JP7406084 A JP 7406084A JP S60218847 A JPS60218847 A JP S60218847A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- photoresist
- gas
- wafer
- corrosion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title description 10
- 238000009832 plasma treatment Methods 0.000 title description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 15
- 239000000956 alloy Substances 0.000 claims abstract description 12
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 11
- 238000001312 dry etching Methods 0.000 claims abstract description 5
- 239000000203 mixture Substances 0.000 claims abstract 2
- 239000007789 gas Substances 0.000 claims description 23
- 229910052801 chlorine Inorganic materials 0.000 claims description 13
- 239000000460 chlorine Substances 0.000 claims description 13
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 12
- 238000003672 processing method Methods 0.000 claims description 7
- 229910018503 SF6 Inorganic materials 0.000 claims 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims 2
- 229960000909 sulfur hexafluoride Drugs 0.000 claims 2
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 13
- 238000005260 corrosion Methods 0.000 abstract description 12
- 230000007797 corrosion Effects 0.000 abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 abstract 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 abstract 2
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000000126 substance Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000005211 surface analysis Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- YPSXFMHXRZAGTG-UHFFFAOYSA-N 4-methoxy-2-[2-(5-methoxy-2-nitrosophenyl)ethyl]-1-nitrosobenzene Chemical compound COC1=CC=C(N=O)C(CCC=2C(=CC=C(OC)C=2)N=O)=C1 YPSXFMHXRZAGTG-UHFFFAOYSA-N 0.000 description 1
- 102100021569 Apoptosis regulator Bcl-2 Human genes 0.000 description 1
- 101000971171 Homo sapiens Apoptosis regulator Bcl-2 Proteins 0.000 description 1
- YGYAWVDWMABLBF-UHFFFAOYSA-N Phosgene Chemical compound ClC(Cl)=O YGYAWVDWMABLBF-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 231100000636 lethal dose Toxicity 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、プラズマ処理方法に関し、特に塩素系ガスプ
ラズマによるドライエツチングの後処理において、レジ
ストの除去と、金属あるいは合金の腐食防止を同時に行
う方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a plasma processing method, and more particularly to a method for removing resist and preventing corrosion of metal or alloy at the same time in post-treatment of dry etching using chlorine-based gas plasma. .
従来例の構成とその問題点
従来よシ、半導体素子、磁性体素子等の電極や配線パタ
ーンの形成には、１５４ 、Ａｌ−８ｉ合金、Ａｔ−Ｃ
ｕ合金、 Ａｔ−Ｃｕ−８ｔ合金等の金属あるいは合金
材料が用いられておシ、これらの微細パターンを加工す
る方法としてハロゲン系ガスプラズマによるドライエツ
チング方法が最近になって定着しつつある。すなわち、
被加工試料上に上記金属材料からなる薄膜を付け、この
薄膜上に７オトレジストからなるマスクパターンを形成
し、エツチング室内において、例えばＣＣ４４，Ｃ４２
，ＢＣｌ２等の塩素系ガスを主成分とする反応性ガスプ
ラズマによってエツチング加工を行なっている。エツチ
ングの終了した被加工試料は、表面に塩素系のガス成分
および塩素系反応生成物を吸着している。このため試料
をエツチング室内に放置したシ、空気中に取出す表、上
記塩素系物質は水分と反応して、例えば塩酸を生成し、
試料の金属部分に腐食を生ぜしめる。この現象を回避す
る方法として、エッチング加工直後に水あるいは液体に
よる洗浄を行なう方法、またはエツチング加工後に試料
を大気に触れさせることなく、酸素を主成分とするガス
プラズマによってフォトレジストの灰化除去処理を施こ
す方法がとられている。しかしながらこれらの方法は次
なる欠点を有するものである。すなわち前者に関しては
洗浄及び乾燥の工程を経た後フォトレジストの除去を行
なうため、工程数が増えまた洗浄及び乾燥用の装置を付
設せねばならない。Conventional structure and problems Conventionally, 154, Al-8i alloy, At-C
Metals or alloy materials such as u-alloy and At-Cu-8t alloy are used, and a dry etching method using halogen gas plasma has recently become established as a method for processing these fine patterns. That is,
A thin film made of the above-mentioned metal material is applied on the sample to be processed, a mask pattern made of 7-photoresist is formed on this thin film, and in an etching chamber, for example, CC44, C42
The etching process is performed using reactive gas plasma whose main component is chlorine-based gas such as , BCl2, etc. The etched sample has chlorine-based gas components and chlorine-based reaction products adsorbed on its surface. For this reason, if the sample is left in the etching chamber and taken out into the air, the above chlorine-based substances will react with moisture to produce, for example, hydrochloric acid.
Causes corrosion on the metal parts of the sample. Methods to avoid this phenomenon include cleaning with water or liquid immediately after etching, or removing ash from the photoresist using oxygen-based gas plasma without exposing the sample to the atmosphere after etching. A method of applying this is being adopted. However, these methods have the following drawbacks. That is, in the former case, the photoresist is removed after the cleaning and drying steps, which increases the number of steps and requires additional equipment for cleaning and drying.
一方後者は金属のエツチング加工時と同様なプラズマを
用いることから、前者のように工程数や装置数が増える
ことはないが、金属あるいは合金の表面に酸化膜層を形
成させる原因となシ、またレジスト灰化除去上同時にレ
ジスト上に吸着された塩素系物質の除去及びエツチング
室内の水分除去には役立つが、レジスト表面以外の表面
に付着した塩素系物質を除去できないため、処理後大気
中にて、腐食が進行するという欠点を有する。On the other hand, since the latter uses the same plasma as when etching metals, it does not require an increase in the number of steps or equipment like the former, but it does not cause the formation of an oxide film layer on the surface of the metal or alloy. In addition, it is useful for removing chlorine-based substances adsorbed on the resist and moisture in the etching chamber at the same time as removing resist ashing, but it cannot remove chlorine-based substances attached to surfaces other than the resist surface, so it is released into the atmosphere after processing. However, it has the disadvantage that corrosion progresses.
ｔた、例エバｏ２（体１９ｃ）％）＋ＣＦ４（体積１０
％）のような酸素とフレオンの混合ガスプラズマを用い
、弗素と塩素の置換反応を利用して塩素系物質を消失さ
せながら、レジスト除去を行なつ試ミもなされているが
、フレオンの濃度が高ければ置換反応は高められるがレ
ジストの除去速度は低下し、また酸素の濃度が高ければ
レジストの除去速度は充分に高いが、置換反応性に劣る
という欠点を有する。さらに試料表面、あるいはエツチ
ング室内に塩素系物質が存在する場合、酸素とフレオン
の混合ガスプラズマを照射することによって、致死量２
ＰＰＭ という猛毒性を有するホスゲン（ＣＣＡ２０）
が生成される可能性もある。For example, Eva o2 (body 19c)%) + CF4 (volume 10
Some attempts have been made to remove the resist by using a mixed gas plasma of oxygen and Freon (e.g. If the concentration of oxygen is high, the substitution reaction will be enhanced, but the resist removal rate will be reduced, and if the oxygen concentration is high, the resist removal rate will be sufficiently high, but the substitution reactivity will be poor. Furthermore, if chlorine-based substances are present on the sample surface or in the etching chamber, a lethal dose of 2
A highly toxic phosgene called PPM (CCA20)
may be generated.
発明の目的
本発明は上記従来方法の欠点に鑑み、被処理物体上の７
オトレジストを迅速に除去すると共に、その腐食を防止
するプラズマ処理方法の提供を目的とするものである。Purpose of the Invention In view of the above-mentioned drawbacks of the conventional method, the present invention provides a
The object of the present invention is to provide a plasma processing method that quickly removes photoresist and prevents its corrosion.
発明の構成
本発明のプラズマ処理方法は、塩素系ガスを主成分とす
るガスプラズマによってエツチング加工された被処理物
体上のフォトレジストの除去と被処理物体の腐食防止を
、ＳＦ６あるいはＮＦ３ あるいは両者の混合ガスを主
成分とするガスプラズマ処理によって行なうことを特徴
としておシ、この方法によれば、フォトレジストの迅速
なる除去と腐食の完全防止が同時にかつ安全に行なえる
という特有の効果を有する。Structure of the Invention The plasma processing method of the present invention removes photoresist on an object to be etched and prevents corrosion of the object to be etched by gas plasma containing chlorine-based gas as a main component. This method is characterized in that it is carried out by gas plasma treatment whose main component is a mixed gas, and this method has the unique effect of quickly removing the photoresist and completely preventing corrosion at the same time and safely.
実施例の説明 以下本発明の一実施例について、その詳細を説明する。Description of examples An embodiment of the present invention will be described in detail below.
本実施例は半導体製造における金属配線パターンエツチ
ング加工に関するものである。金属配線材料としてＡｔ
−８ｉ（１％）合金を用い、フォトレジストにはポジ型
フォトレジストを使用した。ウェハーロ径は４インチで
ある。エツチング装置として高周波（１ｓ、 ｓｅＩ＆
＋Ｌ）プラズマを利用した平行平板電極型を使用した。This embodiment relates to metal wiring pattern etching processing in semiconductor manufacturing. At as a metal wiring material
-8i (1%) alloy was used, and a positive photoresist was used as the photoresist. The wafer diameter is 4 inches. High frequency (1s, seI &
+L) A parallel plate electrode type using plasma was used.
酸化シリコン層を表面に有するウェノ・−にＡ７−８
ｉ （１ｆｂ ）合金を約１．０μｍの厚みで膜付けし
、その上にフォトレジストのパターンマスキングを施し
、このウエノ・−をエツチング室内に設置し、真空排気
手段によって内部圧力を１×１Ｏ−５Ｔｏττに数分間
保時した後、室〆福塩化炭素（ＣＣＺ４）を流量３ｏ・
・７分で導入しながらエツチング室内圧力を０．２Ｔｏ
ｒｒに保つよう排気し、このガス雰囲気に高周波放電プ
ラズマを電極間に起こして、Ａｔ−８ｔ（１％）合金の
選択工、ツチングを行なった。エツチング終了後、ウェ
ハーを移動することなく室内圧力が１×１０−３Ｔｏｒ
ｒ となるまで真空排気し、その後直ちにＳＦ６ ガス
を流量４０９ＣＣＭで導入し、圧力を０．２５Ｔｏｒｒ
に保持して高周波電力４００Ｗを両電極間に印加して
プラズマを発生させた。放電はフォトレジストが完全に
除去された時点で止め、室内を圧力Ｉ Ｘ １０−”Ｔ
ａｒｔ まで真空排気したのち、ウェハーを取出し、ウ
エノ・−の表面分析を行なうと共に大気中で時間経過と
共に腐食発生の状況を顕微鏡観察した。Weno-A7-8 with silicon oxide layer on the surface
A film of i(1fb) alloy is deposited to a thickness of approximately 1.0 μm, a photoresist pattern is masked on the film, this ueno- is placed in an etching chamber, and the internal pressure is reduced to 1×1 O- by evacuation means. After keeping the temperature at 5Toττ for several minutes, the chamber was heated to a flow rate of 3o.
・During the introduction in 7 minutes, the pressure in the etching chamber was increased to 0.2To
The atmosphere was evacuated so as to maintain the temperature at rr, and high-frequency discharge plasma was generated between the electrodes in this gas atmosphere to perform selective processing and cutting of the At-8t (1%) alloy. After etching, the room pressure is reduced to 1 x 10-3 Torr without moving the wafer.
The vacuum was evacuated until r, and then SF6 gas was immediately introduced at a flow rate of 409 CCM, and the pressure was reduced to 0.25 Torr.
Plasma was generated by applying high frequency power of 400 W between both electrodes. The discharge is stopped when the photoresist is completely removed, and the pressure in the chamber is I
After evacuation to art, the wafer was taken out, the surface of the wafer was analyzed, and the occurrence of corrosion was observed under a microscope in the atmosphere over time.
この結果、ＳＦ６ ガスによるプラズマ処理方法を用い
ると、レジストの除去速度は約ｅｏｏｏＡＡＩｕＡで０
２ガスによるプラズマ処理時とほぼ同様の値を示し、表
面分析によって、塩素系物質は全く検出されず、腐食の
発生も皆無であった。As a result, when a plasma processing method using SF6 gas is used, the resist removal rate is approximately eoooAAIuA and 0.
The values were almost the same as those obtained during plasma treatment with two gases, and surface analysis revealed that no chlorine-based substances were detected and no corrosion occurred.
またＮＦ３ ガスをプラズマ処理に用いた場合、レジス
トの除去速度は７０００八Δ−となり、Ｗｆの表面分析
によって塩素系物質は全く検出されず、腐食の発生も皆
無であった。When NF3 gas was used for plasma treatment, the resist removal rate was 70008 Δ-, no chlorine-based substances were detected by Wf surface analysis, and no corrosion occurred.
発明の効果
以上のように本発明によれば、塩素系ガスプラズマによ
るドライエツチングの後処理としてＳＦ６あるいはＮＦ
３ あるいは両者の混合ガスが主成分となるガスプラズ
マによって被処理物体上のフォトレジストをエツチング
除去すると共に被処理物体の腐食完全防止することがで
きる。Effects of the Invention As described above, according to the present invention, SF6 or NF is used as a post-treatment after dry etching using chlorine-based gas plasma.
3. Alternatively, the photoresist on the object to be processed can be etched away by gas plasma mainly composed of a mixed gas of both gases, and corrosion of the object to be processed can be completely prevented.
Claims (3)
ＮＦ３）、あるいは、両者の混合ガスを主成分とするガ
スプラズマを用いて、被処理物体上のフォトレジストを
エツチング除去するプラズマ処理方法。(1) Sulfur hexafluoride (SF6) or nitrogen trifluoride (
A plasma processing method in which photoresist on an object to be processed is etched away using gas plasma containing NF3) or a mixture of both gases as main components.
ングを終えた物体である特許請求の範囲第１項記載のプ
ラズマ処理方法。(2) The plasma processing method according to claim 1, wherein the object to be processed is an object that has undergone dry etching of At or M alloy.
ツチングを終えた物体である特許請求の範囲第１項記載
のプラズマ処理方法。(3) The plasma processing method according to claim 1, wherein the object to be processed is an object that has been dry etched using chlorine-based gas plasma.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7406084A JPS60218847A (en) | 1984-04-13 | 1984-04-13 | Method of plasma treatment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7406084A JPS60218847A (en) | 1984-04-13 | 1984-04-13 | Method of plasma treatment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60218847A true JPS60218847A (en) | 1985-11-01 |
Family
ID=13536270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7406084A Pending JPS60218847A (en) | 1984-04-13 | 1984-04-13 | Method of plasma treatment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60218847A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6358429B1 (en) * | 1998-08-05 | 2002-03-19 | Murata Manufacturing Co., Ltd. | Electronic device and method for producing the same |
| JP2021114615A (en) * | 2011-10-19 | 2021-08-05 | 株式会社半導体エネルギー研究所 | Transistor |
-
1984
- 1984-04-13 JP JP7406084A patent/JPS60218847A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6358429B1 (en) * | 1998-08-05 | 2002-03-19 | Murata Manufacturing Co., Ltd. | Electronic device and method for producing the same |
| JP2021114615A (en) * | 2011-10-19 | 2021-08-05 | 株式会社半導体エネルギー研究所 | Transistor |
| US11817505B2 (en) | 2011-10-19 | 2023-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
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