JPS60210026A - Semiconductor switch circuit - Google Patents
Semiconductor switch circuitInfo
- Publication number
- JPS60210026A JPS60210026A JP6574584A JP6574584A JPS60210026A JP S60210026 A JPS60210026 A JP S60210026A JP 6574584 A JP6574584 A JP 6574584A JP 6574584 A JP6574584 A JP 6574584A JP S60210026 A JPS60210026 A JP S60210026A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- switch circuit
- capacitor
- capacitors
- turn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
Landscapes
- Electronic Switches (AREA)
Abstract
Description
【発明の詳細な説明】
[発明の利用分野〕
本発明は、半導体を用いたスイッチ回路に係り、特に、
半導体素子を複数個直列にして構成した半導体スイッチ
回路に関する。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a switch circuit using a semiconductor, and in particular,
The present invention relates to a semiconductor switch circuit configured by connecting a plurality of semiconductor elements in series.
半導体素子の高耐圧化の進展に伴い、直流高電圧回路の
スイッチにも従来からの真空管に代り得る半導体素子を
複数個直列接続したスイッチ回路が検討されるようにな
ってきた。第1図は、MO5FETtl−n個直列接続
した追従点弧方式のスイッチ回路である。図において、
11〜1oはMOSFET、21〜2.、は分圧用コン
デンサ、31〜3rlは抵抗、41〜4rlはダイオー
ド、51〜5o−い6、〜6□はツェナーダイオード、
7□〜7□は分圧用抵抗である。このスイッチ回路では
、MOS FET1 、にゲート信号が印加されていな
い時は、1.はしゃ断状態である。この時、MOS F
ET1□〜1 、のゲート、ソース間の電圧は、カット
オフ電圧以下であり、12〜1hもしゃ断状態にある。With the progress in increasing the withstand voltage of semiconductor devices, switch circuits in which a plurality of semiconductor devices are connected in series, which can replace conventional vacuum tubes, are being considered for switches in DC high voltage circuits. FIG. 1 shows a follow-up firing type switch circuit in which tl-n MO5FETs are connected in series. In the figure,
11-1o are MOSFETs, 21-2. , are voltage dividing capacitors, 31-3rl are resistors, 41-4rl are diodes, 51-5o-i6, ~6□ are Zener diodes,
7□ to 7□ are voltage dividing resistors. In this switch circuit, when no gate signal is applied to MOS FET1, 1. It is in a cutoff state. At this time, MOS F
The voltage between the gate and source of ET1□~1 is below the cutoff voltage and remains in the cutoff state for 12~1h.
コンデンサ2.〜2hは、スイッタ回路に印加される電
圧をほぼ抵抗71〜7oで分圧した電圧に充電されてい
る。本スイッチ回路のターンオン動作は、11がゲート
信号によってターンオンすると、21が電源になって1
□のゲートをバイアスして、12のゲート入力容量の電
圧をカットオフ電圧以上にさせ、12をターンオンさせ
る。以降、同様にして13,14・・・1.1がターン
オンして、ターンオン動作を完了する。一方、ターンオ
フ動作は、11がターンオフすると、オン時に充電され
た12のゲート入力容量の電荷が12のドレイン、ゲー
ト、41及び21の回路で放電し、その電圧がカット電
圧以下になることによって、12がターンオフする。以
降、同様にしてt、、i4・・・1.がターンオフして
、ターンオフ動作を完了する。分圧抵抗71〜7rlで
定まるほぼ均等な電圧分担に達するまでは、下段のコン
デンサ程ターンオフ時に蓄積する電荷量が多いので電圧
が高くなり、第2図に示す腎性になる。しゃ断時間を短
くするため、コンデンサ容量を小さくすればする程、こ
の傾向が大きくなる。ターンオフ時の分担電圧が不平衡
になり、素子耐圧を有効に活用したスイッチ回路ができ
ないという欠点がある。Capacitor 2. ~2h is charged to a voltage obtained by dividing the voltage applied to the switch circuit by approximately the resistors 71 to 7o. The turn-on operation of this switch circuit is that when 11 is turned on by the gate signal, 21 becomes the power supply and 1
The gate of □ is biased to make the voltage of the gate input capacitor of 12 exceed the cutoff voltage, and 12 is turned on. Thereafter, the transistors 13, 14, . . . 1.1 are turned on in the same manner to complete the turn-on operation. On the other hand, in the turn-off operation, when 11 is turned off, the charge in the gate input capacitance of 12, which was charged when it was on, is discharged in the drain, gate, 41 and 21 circuit of 12, and the voltage becomes lower than the cut voltage. 12 turns off. Thereafter, in the same manner, t, , i4...1. turns off to complete the turn-off operation. Until almost equal voltage sharing determined by the voltage dividing resistors 71 to 7rl is reached, the capacitors in the lower stage have a larger amount of charge accumulated at turn-off, so the voltage becomes higher, and the voltage becomes renal as shown in FIG. This tendency becomes more pronounced as the capacitor capacity is made smaller in order to shorten the cut-off time. The disadvantage is that the shared voltages at turn-off become unbalanced, making it impossible to create a switch circuit that effectively utilizes the element withstand voltage.
本発明の目的は、ターンオフ時の各スイッチ素子の分担
電圧の改善を図った半導体スイッチ回路を提供するにあ
る。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor switch circuit in which the shared voltage of each switch element during turn-off is improved.
本発明の要点は、MOS FETのターンオフに必要な
電荷量を考慮して、分圧コンデンサ容量を変え、電圧分
担を均等にしたことにある。The gist of the present invention is to equalize the voltage sharing by changing the capacitance of the voltage dividing capacitor in consideration of the amount of charge required to turn off the MOS FET.
第1図に示すように、MOS FETの直列数がnの時
に、MOS FETLr1がターンオフした時、l≦m
≦nのMOS FETImの分圧コンデンサ2I11の
電荷Qmlは、各MO8FETをターンオフさせるに必
要な電荷をQ。イとすると、Q ml = (n−m)
Qo4. ・・・(1)となる。分圧抵抗7.〜7h
の値は大きいので放電は無視でき、1nのターンオフ後
の各分圧コンデンサ21〜2イの電荷の増加分Q8は等
しいので、スイッチ回路しゃ断完了後の2.の電荷QI
112は、
Q m 2 = Q m + + Q B ・・・(2
)となる。従って、分担電圧を均等にするためには、が
一定になるようにCmを選択すればよい。(第2図)
例えば、電源電圧がEoで回路インダクタンスが小さく
、無視できるような負荷の場合は1回路インダクタンス
分による過充電は生じないので、0
に=−・・・(4)
となることが望ましい。As shown in Fig. 1, when the number of MOS FETs connected in series is n, when MOS FET Lr1 is turned off, l≦m.
The charge Qml of the voltage dividing capacitor 2I11 of MOS FET Im with ≦n is the charge required to turn off each MO8FET. Q ml = (n-m)
Qo4. ...(1). Voltage dividing resistor7. ~7h
Since the value of is large, the discharge can be ignored, and since the increase Q8 in the charge of each voltage dividing capacitor 21 to 2a after turning off 1n is equal, 2. The charge QI of
112 is Q m 2 = Q m + + Q B ... (2
). Therefore, in order to equalize the shared voltages, Cm should be selected so that Cm is constant. (Figure 2) For example, if the power supply voltage is Eo, the circuit inductance is small, and the load is negligible, overcharging due to one circuit inductance will not occur, so 0 = -... (4) is desirable.
従って、n段目では、 h Q5+=−Eo ・・・ (6) となる。m段目では でめることができる。Therefore, at the nth stage, h Q5+=-Eo...(6) becomes. In the mth stage You can do it.
nと10とした半導体スイッチ回路の分担電圧の測定値
を第3図に示す。式(7)で定まる値に近い分圧コンデ
ンサを用いることにより、分担電圧を大幅に改善できる
ことが判る。なお、ターンオフに必要な電荷Q03.が
小さなため、Foに比較してvoの値が小さいのでvo
の値を無視することも可能である。FIG. 3 shows the measured values of the shared voltages of the semiconductor switch circuit with n and 10. It can be seen that by using a voltage dividing capacitor close to the value determined by equation (7), the shared voltage can be significantly improved. Note that the charge Q03. required for turn-off. is small, so the value of vo is small compared to Fo, so vo
It is also possible to ignore the value of .
なお、MOS FETの代りにQTOを用いても同様に
して分担電圧の改善を図ることができるのは勿論である
。但し、GTOの場合は、ターンオフに必要な電荷がス
イッチ回路電流に依存するので、使用するスイッチ回路
電流の範囲を考えて分圧コンデンサを決める必要がある
。It goes without saying that the shared voltage can also be improved in the same way by using a QTO instead of a MOS FET. However, in the case of a GTO, the charge required for turn-off depends on the switch circuit current, so it is necessary to decide the voltage dividing capacitor by considering the range of the switch circuit current to be used.
なお、21〜2hを何段階かのブロックに分け。In addition, 21-2h is divided into blocks of several stages.
ブロック間でコンデンサ容量を変えることも可能であり
、この場合もほぼ同等の分圧効果を持つことができる。It is also possible to change the capacitor capacity between blocks, and in this case also it is possible to have almost the same voltage dividing effect.
本発明によれば、ターンオフ時の各スイッチ素子の分担
電圧をほぼ均等にできるので、素子耐圧を有効に活用し
た半導体スイッチ回路を提供できる。According to the present invention, the shared voltages of each switch element at turn-off can be made almost equal, so that it is possible to provide a semiconductor switch circuit that effectively utilizes the element withstand voltage.
第1図は本発明の一実施例のMOS FETを直列接続
して追従点弧する方式の半導体スイッチ回路図、第2図
は分担電圧関係を示す説明図、第3図は分圧コンデンサ
容量を変えた時の改善効果を示す説明図である。
1、〜1、・・・MOS FET、21〜2□・・・分
圧コンンデンサ、31〜3h・・・抵抗、41〜4rl
・・・ダイオード、51〜5n−1961〜6h・・・
ツェナーダイオード、7.〜7I、・・・分圧抵抗。
代理人 弁理士 高橋明夫
第1図Fig. 1 is a circuit diagram of a semiconductor switch according to an embodiment of the present invention in which MOS FETs are connected in series to perform follow-up firing, Fig. 2 is an explanatory diagram showing the shared voltage relationship, and Fig. 3 is a diagram showing the capacitance of the voltage dividing capacitor. It is an explanatory view showing an improvement effect when changing. 1, ~1,...MOS FET, 21~2□...Divisional voltage capacitor, 31~3h...Resistor, 41~4rl
...Diode, 51~5n-1961~6h...
Zener diode, 7. ~7I,...divider resistance. Agent Patent Attorney Akio Takahashi Figure 1
Claims (1)
ッチ素子と、前記第一のスイッチ素子に直列に接続して
前記第一のスイッチ素子の動作に追従して動作する複数
の第二のスイッチ素子と、この第二のスイッチ素子の駆
動端子と下段のスイッチ素子の低電位光の間にコンデン
サを接続して構成した半導体スイッチ回路において、 スイッチ素子のターンオフに必要な電荷量を考慮して下
段のコンデンサの容量が上段のコンデンサの容量と同等
以上になるように構成したことを特徴とする半導体スイ
ッチ回路。 2、特許請求の範囲第1項において、 前記コンデンサは、何段階のブロックに分け、上段のブ
ロックになる程容量が小さくなるように配置したことを
特徴とする半導体スイッチ回路。[Claims] 1. A first switch element that performs on/off operations based on a control signal, and a first switch element that is connected in series to the first switch element and operates in accordance with the operation of the first switch element. In a semiconductor switch circuit configured by connecting a plurality of second switch elements and a capacitor between the drive terminal of the second switch element and the low potential light of the lower switch element, the charge required to turn off the switch elements is 1. A semiconductor switch circuit characterized in that the capacitance of the lower stage capacitor is configured to be equal to or greater than the capacitance of the upper stage capacitor in consideration of the amount of the capacitor. 2. The semiconductor switch circuit according to claim 1, wherein the capacitor is divided into several stages of blocks and arranged so that the higher the block, the smaller the capacitance.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6574584A JPS60210026A (en) | 1984-04-04 | 1984-04-04 | Semiconductor switch circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6574584A JPS60210026A (en) | 1984-04-04 | 1984-04-04 | Semiconductor switch circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60210026A true JPS60210026A (en) | 1985-10-22 |
Family
ID=13295856
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6574584A Pending JPS60210026A (en) | 1984-04-04 | 1984-04-04 | Semiconductor switch circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60210026A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4751408A (en) * | 1985-09-06 | 1988-06-14 | Thomson-Csf | Voltage-switching device |
JPH06169242A (en) * | 1992-11-30 | 1994-06-14 | Toshiba Corp | Driver circuit |
EP1693962A1 (en) * | 2005-02-18 | 2006-08-23 | E2V Technologies (UK) Limited | High voltage switching apparatus |
-
1984
- 1984-04-04 JP JP6574584A patent/JPS60210026A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4751408A (en) * | 1985-09-06 | 1988-06-14 | Thomson-Csf | Voltage-switching device |
JPH06169242A (en) * | 1992-11-30 | 1994-06-14 | Toshiba Corp | Driver circuit |
EP1693962A1 (en) * | 2005-02-18 | 2006-08-23 | E2V Technologies (UK) Limited | High voltage switching apparatus |
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