JPS60206077A - Manufacture of amorphous semiconductor solar cell - Google Patents
Manufacture of amorphous semiconductor solar cellInfo
- Publication number
- JPS60206077A JPS60206077A JP59059375A JP5937584A JPS60206077A JP S60206077 A JPS60206077 A JP S60206077A JP 59059375 A JP59059375 A JP 59059375A JP 5937584 A JP5937584 A JP 5937584A JP S60206077 A JPS60206077 A JP S60206077A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- solar cell
- semiconductor layer
- electrodes
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 230000001678 irradiating effect Effects 0.000 claims abstract 2
- 238000009792 diffusion process Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は絶縁基板の一主面上に複数の単位電池を形成し
、該単位電池を相互接続する非晶質半導体太陽電池の製
造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing an amorphous semiconductor solar cell in which a plurality of unit cells are formed on one main surface of an insulating substrate and the unit cells are interconnected.
従来、前記単位電池全直列接続する方法として例えば第
１図に示すように、絶縁基板ａの一主面に複数の単位電
池ｖＩ ＋ Ｖｔ ＋ ｖｌの接続部すを有する第１の
ｔ極Ｃを各被着し、次いで接続部すを残して複数の第１
の電極Ｃ上に連続的に連なる非晶質シリコン半導体層ｄ
ｆｔ被着し、更に第１の電極０に対応する半導体層ｄ上
に隣接する単位電池の第１の電極Ｃの接続部すに接続さ
れる接続部ｅを有する第２の電極ｆを被着する方法が知
られている。Conventionally, as a method for connecting all of the unit cells in series, for example, as shown in FIG. each deposit, then a plurality of first
an amorphous silicon semiconductor layer d continuous on the electrode C of
ft is deposited, and further a second electrode f having a connecting portion e connected to the connecting portion of the first electrode C of the adjacent unit battery is deposited on the semiconductor layer d corresponding to the first electrode 0. There are known ways to do this.
しかしながらこの方法は、第１及び第２電極Ｃ１ｆの接
続部す、ｅがスペースの関係から細帯状に形成されるの
で、電気抵抗が高くそのため変換効率が低い不都合があ
った。However, this method has the disadvantage that the connecting portions A and E of the first and second electrodes C1f are formed in the shape of a narrow strip due to space constraints, resulting in high electrical resistance and therefore low conversion efficiency.
また、第２図（Ａ） （Ｂ）に示すように、絶縁基板ａ
のう
導体層ｄを穴のあいたマスク・で覆い、該半導体層ｄの
第１電極０の端部に対応する部分にマスクの穴を介して
金属イオンを打ち込む（第２図体））。次いで第２の電
極ｆを、イオンを打ち込んだ部分りと、隣接する電極０
に対向する位置に被着しく第２図（Ｂ））これを熱処理
するという複数の工程を順次行なう非晶質薄膜素子の製
造方法が知られている。In addition, as shown in FIGS. 2(A) and 2(B), an insulating substrate a
The conductor layer d is covered with a mask having holes, and metal ions are implanted through the holes in the mask into a portion of the semiconductor layer d corresponding to the end of the first electrode 0 (second figure). Next, the second electrode f is connected to the ion-implanted area and the adjacent electrode 0.
A method of manufacturing an amorphous thin film element is known in which a plurality of steps are sequentially performed in which the thin film element is deposited at a position opposite to that shown in FIG. 2(B) and then heat treated.
この方法は、単位素子の第１電極０と隣接する単位素子
の第２の電極ｆとをその幅広い縁部で電気接続するので
、前記の方法に比べて電気抵抗が低く、そのため効率を
高くできるが、イオンを半導体層の所定領域に打ち込も
ためのマスク等の手段が必要であり、またイオンの打ち
込み、加熱処理の各工程を行なわなければならないから
工程が複雑でコスト高となる不都合があった。In this method, the first electrode 0 of a unit element and the second electrode f of an adjacent unit element are electrically connected at their wide edges, so the electrical resistance is lower than in the above-mentioned methods, and therefore efficiency can be increased. However, a method such as a mask is required to implant ions into a predetermined region of the semiconductor layer, and each step of ion implantation and heat treatment must be performed, making the process complicated and costly. there were.
本発明は、前記した従来の方法の不都合を無くし、変換
効率の高い非晶質半導体太陽電池を簡単な工程で作製す
ることができる製造方法を提供することをその目的とし
たもので、絶縁基板の一主面上に複数の単位電池の第１
の電極を各形成し、該第１の電極上に連続的に連なる非
晶質半導体層を形成し、該半導体層上に単位電池の第２
の電極を隣接する単位電池の第１の電極と半導体層を介
して重なるように形成し、第１の電極と第２の電極の重
なり部分に介在する半導体層を導体化する非晶質半導体
太陽電池の製造方法において、第２の電極の前記重なり
部分を加熱して該第２の電極の一部の金属を半導体層の
前記重なり部分に拡散させることを特徴とする。An object of the present invention is to provide a manufacturing method that eliminates the disadvantages of the conventional methods described above and can manufacture an amorphous semiconductor solar cell with high conversion efficiency through simple steps. The first of a plurality of unit batteries on one main surface of
A continuous amorphous semiconductor layer is formed on the first electrode, and a second electrode of the unit cell is formed on the semiconductor layer.
an amorphous semiconductor solar cell in which an electrode is formed so as to overlap with a first electrode of an adjacent unit cell via a semiconductor layer, and the semiconductor layer interposed in the overlapping portion of the first electrode and the second electrode is made conductive. The method for manufacturing a battery is characterized in that the overlapping portion of the second electrode is heated to diffuse some metal of the second electrode into the overlapping portion of the semiconductor layer.
以下本発明の実権例を図面につき説明する。Practical examples of the present invention will be explained below with reference to the drawings.
実施例１
従来から知られているスプレー法によって、第６図（Ａ
） （Ｂ）に示すように、透光性カラス基板１ｌｌ（１
１０酩Ｘ ６０ｇ ）の−主面全面に厚さ約１．０μｍ
の８ｎＯ，膜を形成し、次いでこの８ ｎ０２膜を塩酸
水溶液を用いてエツチングし、間隔０．５籠で面積１０
０龍×９鶴の５個の光入射側透明電極（２１を作製した
。そして該基板Ｃ１ｌの端部に位置する１つの透明電極
（２）の端部に１００闘×２間の覆いをして基板＋１１
を５００°Ｃに加熱し、グロー放電法によって基板（１
１の全面罠非晶質シリコン半導体層（３）を、すなわち
そのＰ層はＳｉＨ４にＢ２Ｈ，を０．８体積算とＯＨ４
’ｉ ６０体１ａ％混合したガスを用いて約１ｓｏＸの
厚みに、１層は８１Ｈ４カスを用いて約５ｏｏｏＸの厚
みに、ｎｍＵｓｉＨ４にＰＨ８ｆ：１体積％混合したガ
スを用いて５００又の厚みに順次堆積して形成した。次
いで、単位電池の背面電極（４）（１００ｍＸ ９龍）
ｔ−１その長辺の１端縁が隣接する単位電池の透明電極
（２：と非晶質シリコン半導体層（３）を介して０，１
ｇ重なるように、また他端縁が透明電１ｍ １２１の端
縁から０．６．、電極上にずれて透明電極（２）と重な
るようにアルミニウムを蒸着することにより形成した。Example 1 By the conventionally known spray method, the image shown in Fig. 6 (A
) As shown in (B), 1 liter of translucent glass substrate (1
1.0μm thick on the entire main surface of 10g x 60g
8nO film was formed, and then this 8n02 film was etched using an aqueous hydrochloric acid solution, and an area of 10
Five transparent electrodes (21) on the light incident side were prepared, measuring 0 x 9. Then, the end of one transparent electrode (2) located at the edge of the substrate C1l was covered with 100 x 2. board+11
was heated to 500°C, and the substrate (1
The entire trap amorphous silicon semiconductor layer (3) of 1, that is, its P layer is SiH4, B2H, 0.8 volume calculation and OH4
'i 60 body 1a% mixed gas to a thickness of about 1 so It was formed by sequential deposition. Next, the back electrode (4) of the unit battery (100mX 9 dragons)
t-1 One edge of the long side is connected to the transparent electrode (2:) of the adjacent unit cell through the amorphous silicon semiconductor layer (3) to 0,1
g so that they overlap, and the other edge is 0.6. , was formed by vapor depositing aluminum so as to be shifted on the electrode and overlap with the transparent electrode (2).
このようにしてガラス基板（１）の−主面上に形成しｆ
ｃ５個の単位電池を次のようにして直列に電気接続した
。In this way, f is formed on the − main surface of the glass substrate (1).
c Five unit batteries were electrically connected in series as follows.
出力電力２，５Ｗ、パルス周波数Ｉ ＫＨｚのＹＡＧレ
ーザ（５１’ｅレーザービーム幅１００μｍとして走査
速度２０＋＋Ｖ秒で背面電極（４１と光入射側透明電極
（２）との重な多部分（６）全照射して該背面電極（４
）のアルミニウムを非晶質シリコン半導体層（３）に熱
拡散（７）させ、かくて両電極（２１１４１間を短絡状
態にし、５個直列の太ｌｉｔ！電池を得た（図では５個
のみを示した）。A YAG laser (51'e) with an output power of 2.5 W and a pulse frequency of I KHz was applied at a scanning speed of 20++ V seconds with a laser beam width of 100 μm. irradiate the back electrode (4
) was thermally diffused (7) into the amorphous silicon semiconductor layer (3), thus creating a short circuit between both electrodes (21141), and obtaining 5 thick lit! batteries in series (only 5 batteries were shown in the figure). showed that).
この太陽電池を光のスペクトル強度１００７Ｗ／ｃＩｉ
ｌのソーラーシュミレータ−（ＡＭ−１）で照射して測
建した結果、その特性は短絡電流１６．０−４色開放電
圧４．２Ｖ、回線因子０．６２．変換効率８．３％であ
った。This solar cell has a light spectral intensity of 1007W/cIi
As a result of irradiation and construction with a solar simulator (AM-1), the characteristics were: short circuit current 16.0, four-color open circuit voltage 4.2V, line factor 0.62. The conversion efficiency was 8.3%.
実施例２
′ｉＡ施例１の背面電極材料であるアルミニウムに代え
てチタニウムを用い、それ以外は実施例１と同一方法、
同一条件で５個の単位電池を作成した。Example 2 'iA The same method as in Example 1 except that titanium was used instead of aluminum as the back electrode material in Example 1.
Five unit batteries were created under the same conditions.
次いで、出力電力４．ＯＷ、パルス周波数Ｉ ＫＨ２の
ＹＡＧレーザーをレーザービーム幅１００μｍ、走査速
度１５龍／秒で背面電極と透明電極との重なり部分を照
射して５個の単位電池を直列に電気接続した太陽電池を
得た。Next, output power 4. OW, a YAG laser with a pulse frequency of I KH2 was used to irradiate the overlapping part of the back electrode and the transparent electrode at a laser beam width of 100 μm and a scanning speed of 15 dragons/second to obtain a solar cell in which five unit cells were electrically connected in series. Ta.
これを実施例１と同じ方法９条件で測定した結果、その
特性は短絡電流１５，８ 、Ａ／Ｃｆ１．開放電圧４、
Ｉｖ、回線因子０，６２．変換効率８．０％であった。As a result of measuring this under the same method and 9 conditions as in Example 1, the characteristics were as follows: short circuit current: 15.8, A/Cf: 1. open circuit voltage 4,
Iv, line factor 0,62. The conversion efficiency was 8.0%.
実施例１及び２の方法によれば、レーザービームを走査
するだけでよく、マスク等の手段を要しないで単位電池
の第２電極と隣接する単位電池の第１電極の重なり部分
間に介在する半導体層に第２を極の金ＪｉＩｌ！を拡散
でき、単位電池を直例接続できた。According to the methods of Examples 1 and 2, it is only necessary to scan the laser beam, and there is no need for means such as a mask to interpose the second electrode of a unit cell and the first electrode of an adjacent unit cell between the overlapping portions. The second layer of gold is the semiconductor layer! could be diffused and unit batteries could be connected directly.
実施例５
実施例１において非晶質シリコン半導体層（３）全形成
した後に、第４図示のように、単位電池の背面電極（４
）として先ず隣接する単位電池の透明電極との重なシ部
分に、０．１ｗ１Ｉ幅でアルミニウムをスリット状に蒸
着して第１部分電極（４１） １に形成し、次いでタン
タルを蒸着して該第１部分電極（４１）と接続される第
２部分電極（４□）を形成した。Example 5 After the amorphous silicon semiconductor layer (3) was completely formed in Example 1, the back electrode (4) of the unit battery was formed as shown in the fourth figure.
), aluminum is first vapor-deposited in the form of a slit with a width of 0.1w1I on the overlapped portion of the transparent electrode of the adjacent unit cell to form the first partial electrode (41) 1, and then tantalum is vapor-deposited to form the first partial electrode (41) 1. A second partial electrode (4□) was formed to be connected to the first partial electrode (41).
このようにして−主面上に５個の単位電池を形成したガ
ラス基板＋１１ｔ−オーブンに入れて２００°Ｃで１５
分間熱処理し、アルミニウムのみを拡散（７）させ、５
個の単位電池が直列接続された太陽電池を得た。In this way - glass substrate with 5 unit cells formed on its main surface + 11t - placed in an oven at 200°C for 15 minutes.
heat treatment for 5 minutes to diffuse only aluminum (7);
A solar cell was obtained in which several unit cells were connected in series.
この太陽電池について実施例１と同様の条件で測定した
結果、その特性は短絡電流１ｓ、ｏｆｉＡ／７＋開放電
圧４．２Ｖ、回線因子０．６１．変換効率７．７％であ
った。As a result of measuring this solar cell under the same conditions as in Example 1, its characteristics were: short circuit current of 1 s, ofiA/7+open circuit voltage of 4.2 V, and line factor of 0.61. The conversion efficiency was 7.7%.
との方法によれば、オーブンにより電極金属を半導体層
に熱拡散するので、量産性が高い特徴がある。According to the method described above, since the electrode metal is thermally diffused into the semiconductor layer using an oven, it is characterized by high mass productivity.
このように本発明によると＠は、絶縁基板の一生面上に
形成された単位電池の第１の電極と、隣接する単位電池
の第２の電極との重なり部分を加熱して該第２の電極の
該重なり部分の金属を半導体層に拡散させ、絶縁基板上
の複数の単位電池を相互接続するようにしたので、変換
効率の高い非晶質半導体太陽電池が少ない工程で製造で
き、コスト安である効果含有する。As described above, according to the present invention, @ heats the overlapping portion of the first electrode of the unit battery formed on the whole surface of the insulating substrate and the second electrode of the adjacent unit battery to generate the second electrode. By diffusing the metal in the overlapping portions of the electrodes into the semiconductor layer and interconnecting multiple unit cells on an insulating substrate, amorphous semiconductor solar cells with high conversion efficiency can be manufactured in fewer steps and at lower costs. Contains certain effects.
第１図は従来の製造方法によって作製された太陽電池の
平面図、第２図（Ａ） （Ｂ）は従来の他の製造方法に
よる各工程を示す図、第３図（Ａ） （Ｂ）は本発明の
一実施例の一工程を示す側面図及び平面図、纂４図は本
発明の他の実権例によって作製された太陽電池の側面図
を示す。
ロト・・透光性ガラス基板 （２ト・・透明電極（３ト
・・非晶質シリコン半導体層
＋４７・・・背面１！極 （５）・・・し − ザ（６
）・・・東なり部分 （７）・・・拡 散 部第１図
４
第４図Fig. 1 is a plan view of a solar cell manufactured by a conventional manufacturing method, Fig. 2 (A) (B) is a diagram showing each process by another conventional manufacturing method, and Fig. 3 (A) (B) FIG. 4 is a side view and a plan view showing one step of an embodiment of the present invention, and FIG. 4 is a side view of a solar cell manufactured according to another embodiment of the present invention. Roto... Transparent glass substrate (2 pieces... Transparent electrode (3 pieces... Amorphous silicon semiconductor layer + 47... Back side 1! pole (5)... The (6 pieces)
)...Eastward part (7)...Diffusion part Fig. 1 4 Fig. 4
Claims (1)
極を各形成し、該第１の電極上に連続的に連なる非晶質
半導体層を形成し、該半導体層上に単位電池の第２の電
極を隣接する単位電池の第１の電極と半導体層を介して
重なるように形成し、第１の電極と第２の電極の重なり
部分に介在する半導体層を導体化する非晶質半導体太陽
電池の製造方法において、第２の電極の前記重なり部分
を加熱して該第２の電極の一部の金属を半導体層の前記
重なり部分に拡散させること全特徴とする非晶質半導体
太陽電池の製造方法。 ２ 第２の電極の前記重なシ部分をレーザービームを照
射して加熱する特許請求の範囲第１項記載の非晶質太陽
電池の製造方法。 ＆ 第２の電極の前記重なり部分に、第２の電極のその
他の部分及び第１の電極の金属より低い温度で半導体層
に拡散する金属を被着し、該金属は拡散するが第１の電
極及び第２の電極のその他の部分の金属は拡散しない温
度で加熱することを特徴とする特許請求の範囲第１項記
載の非晶質半導体太陽電池の製造方法。[Claims] 1. Forming first electrodes of a plurality of unit cells on one main surface of an insulating substrate, forming a continuous amorphous semiconductor layer on the first electrodes, A second electrode of a unit battery is formed on the semiconductor layer so as to overlap with a first electrode of an adjacent unit battery via the semiconductor layer, and a semiconductor interposed in the overlapping portion of the first electrode and the second electrode is formed. In the method for manufacturing an amorphous semiconductor solar cell in which the layers are made conductive, the overlapping portion of the second electrode is heated to diffuse some metal of the second electrode into the overlapping portion of the semiconductor layer. A method for manufacturing a characterized amorphous semiconductor solar cell. 2. The method of manufacturing an amorphous solar cell according to claim 1, wherein the overlapping portion of the second electrode is heated by irradiating it with a laser beam. & A metal that diffuses into the semiconductor layer at a lower temperature than the other portions of the second electrode and the metal of the first electrode is deposited on the overlapping portion of the second electrode, and the metal diffuses into the semiconductor layer at a temperature lower than that of the metal of the first electrode. 2. The method of manufacturing an amorphous semiconductor solar cell according to claim 1, wherein the metal of the electrode and other parts of the second electrode is heated at a temperature at which no diffusion occurs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59059375A JPS60206077A (en) | 1984-03-29 | 1984-03-29 | Manufacture of amorphous semiconductor solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59059375A JPS60206077A (en) | 1984-03-29 | 1984-03-29 | Manufacture of amorphous semiconductor solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60206077A true JPS60206077A (en) | 1985-10-17 |
Family
ID=13111465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59059375A Pending JPS60206077A (en) | 1984-03-29 | 1984-03-29 | Manufacture of amorphous semiconductor solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60206077A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS628578A (en) * | 1985-06-04 | 1987-01-16 | シーメンス ソーラー インダストリーズ，エル．ピー． | Thin film solar cell module |
| EP0286918A2 (en) * | 1987-04-14 | 1988-10-19 | Nukem GmbH | Method of manufacturing serially switched thin-film solar cells |
| FR2639475A1 (en) * | 1988-11-18 | 1990-05-25 | Sanyo Electric Co | METHOD FOR MANUFACTURING A PHOTOVOLTAIC DEVICE |
| JPH02177571A (en) * | 1988-12-28 | 1990-07-10 | Taiyo Yuden Co Ltd | Manufacture of amorphous semiconductor photovoltaic element |
| JPH03192754A (en) * | 1989-12-22 | 1991-08-22 | Omron Corp | Semiconductor device and manufacture thereof |
| EP1727211A1 (en) * | 2005-05-27 | 2006-11-29 | Sharp Kabushiki Kaisha | Method of fabricating a thin-film solar cell, and thin-film solar cell |
| JP2010118693A (en) * | 2010-02-22 | 2010-05-27 | Sharp Corp | Thin-film solar cell |
| JP2010118694A (en) * | 2010-02-22 | 2010-05-27 | Sharp Corp | Thin-film solar cell and method of manufacturing the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55128881A (en) * | 1979-03-28 | 1980-10-06 | Matsushita Electric Ind Co Ltd | Method of fabricating semiconductor device |
| JPS57176778A (en) * | 1981-03-31 | 1982-10-30 | Rca Corp | Solar battery array |
| JPS5853870A (en) * | 1981-09-26 | 1983-03-30 | Matsushita Electric Ind Co Ltd | Thin film solar battery |
-
1984
- 1984-03-29 JP JP59059375A patent/JPS60206077A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55128881A (en) * | 1979-03-28 | 1980-10-06 | Matsushita Electric Ind Co Ltd | Method of fabricating semiconductor device |
| JPS57176778A (en) * | 1981-03-31 | 1982-10-30 | Rca Corp | Solar battery array |
| JPS5853870A (en) * | 1981-09-26 | 1983-03-30 | Matsushita Electric Ind Co Ltd | Thin film solar battery |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS628578A (en) * | 1985-06-04 | 1987-01-16 | シーメンス ソーラー インダストリーズ，エル．ピー． | Thin film solar cell module |
| EP0286918A2 (en) * | 1987-04-14 | 1988-10-19 | Nukem GmbH | Method of manufacturing serially switched thin-film solar cells |
| FR2639475A1 (en) * | 1988-11-18 | 1990-05-25 | Sanyo Electric Co | METHOD FOR MANUFACTURING A PHOTOVOLTAIC DEVICE |
| JPH02177571A (en) * | 1988-12-28 | 1990-07-10 | Taiyo Yuden Co Ltd | Manufacture of amorphous semiconductor photovoltaic element |
| JPH03192754A (en) * | 1989-12-22 | 1991-08-22 | Omron Corp | Semiconductor device and manufacture thereof |
| EP1727211A1 (en) * | 2005-05-27 | 2006-11-29 | Sharp Kabushiki Kaisha | Method of fabricating a thin-film solar cell, and thin-film solar cell |
| JP2010118693A (en) * | 2010-02-22 | 2010-05-27 | Sharp Corp | Thin-film solar cell |
| JP2010118694A (en) * | 2010-02-22 | 2010-05-27 | Sharp Corp | Thin-film solar cell and method of manufacturing the same |
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