JPS60192955A - Photoconductive member - Google Patents

Photoconductive member

Info

Publication number
JPS60192955A
JPS60192955A JP59049676A JP4967684A JPS60192955A JP S60192955 A JPS60192955 A JP S60192955A JP 59049676 A JP59049676 A JP 59049676A JP 4967684 A JP4967684 A JP 4967684A JP S60192955 A JPS60192955 A JP S60192955A
Authority
JP
Japan
Prior art keywords
photoconductive
gas
protective layer
surface protective
photoconductive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59049676A
Other languages
Japanese (ja)
Inventor
Kunio Ohashi
邦夫 大橋
Tadashi Tonegawa
利根川　正
Shoichi Nagata
永田　祥一
Shoji Nakamura
昌次 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP59049676A priority Critical patent/JPS60192955A/en
Priority to DE3546544A priority patent/DE3546544C2/de
Priority to DE19853506657 priority patent/DE3506657A1/en
Priority to US06/706,669 priority patent/US4632894A/en
Publication of JPS60192955A publication Critical patent/JPS60192955A/en
Priority to US06/786,046 priority patent/US4683186A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

PURPOSE:To obtain a photoconductive member small in the content of Si and low in residual potential by adding a large amt. of element of group III to a surface protective layer. CONSTITUTION:A photoconductive member is composed of a substrate, a photoconductive layer formed on it, and its surface made of amorphous silicon contg. oxygen. The surface protective layer contains an element of group III, such as B, in an amt. of 10<-3>-10<-1>atom% of Si, and it has a thickness of 0.01-4.0mum.

Description

【発明の詳細な説明】 く技術分野〉 本発明は光に対して感受性を有する光導電材に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a photoconductive material sensitive to light.

〈従来技術〉 従来、電子写真用像形成部材や原稿読取装置等における
光導電層を構成する光導電材料さしては、セレンＳ　ｅ
　＋硫化カドミウムＣｄＳ、酸化亜鉛ＺｎＯ等の無機光
導電材料若しくはＰＶＫ（ポリビニルカルバゾールＬ　
ＴＮＦ（）リニトロフルオレノン）等の有機光導材ｆ−
１か使用されていた。<Prior Art> Conventionally, photoconductive materials constituting photoconductive layers in electrophotographic image forming members, document reading devices, etc. have been made of selenium S e
+ Inorganic photoconductive materials such as cadmium sulfide CdS, zinc oxide ZnO or PVK (polyvinylcarbazole L)
Organic light guide material f- such as TNF ()linitrofluorenone)
1 was used.

しかるに、上記材料は光導電材料として要求される光感
度、分光感度、ＳＮ比（明抵抗／暗抵抗）或いは耐久性
、人体への安全性（危険度ンにおいて必すしも満足のい
くものではなく、ある程度、条件を緩和して、個々の状
況に対応して用いられている。However, the above materials are not necessarily satisfactory in terms of photosensitivity, spectral sensitivity, signal-to-noise ratio (bright resistance/dark resistance), durability, and safety to the human body (risk level) required for photoconductive materials. , the conditions are relaxed to some extent and used depending on the individual situation.

一方、非晶質（アモルファス）シリコンａ−５ｉ光導電
材料は、高光感度、高耐久性及び無公害等の長所を期待
できるため、近年、活発な研究がなされている。しかし
、現状では暗抵抗が低く、充分なＳＮ比が得られないこ
と、又、耐湿性に代表される耐環境特性並ひに経済的安
定性等においてまだまだ大きく改良されなければならな
い。On the other hand, amorphous silicon a-5i photoconductive materials are expected to have advantages such as high photosensitivity, high durability, and no pollution, and have been actively researched in recent years. However, at present, the dark resistance is low and a sufficient signal-to-noise ratio cannot be obtained, and further improvements are still needed in terms of environmental resistance characteristics such as moisture resistance, economic stability, etc.

特に、非晶質シリコンはその表面が不安性であり、それ
ゆえ、耐環境特性、経時安定性等において劣化してしま
う。In particular, amorphous silicon has an unstable surface and therefore deteriorates in environmental resistance, stability over time, and the like.

そのため、非晶質シリコンの表面に表面保護層（又は表
面ブロッキング層とも言う。）が設けられる様になった
が、この表面保護層は ａ　５ＩＸＮ（Ｉ　Ｘ）Ｉａ−８ｌ）（Ｃ（Ｉ　ｘ）１
ａ−３ＩＸｏ（Ｉ　Ｘ）（０＜Ｘ＜Ｉ）等で形成されて
おり、感光体として主たる特性である帯電能、電荷保持
能力及び光感度、残留電位等に悪影響を与えることが少
なくなかった。即ち、耐環境特性、経時安定性等を増す
ため、該表面保護層ｆｆ：電気的に絶縁性の膜とする（
組成比Ｘの値を小さくする）と、光感度が悪（なり残留
電位が上昇しコピー（複写）画像でカブリ等の現象が生
じる。これとは逆に、光導電性を向上させる（組成比Ｘ
の値を大きくする）と、残留電位は減少するが、耐環境
特性、経時安定性が劣る感光体となってしまうのである
。Therefore, a surface protective layer (also called a surface blocking layer) has come to be provided on the surface of amorphous silicon, but this surface protective layer is )1
It is formed of a-3IXo (I . That is, in order to increase environmental resistance characteristics, stability over time, etc., the surface protective layer ff is an electrically insulating film (
If the value of the composition ratio X
(increasing the value of ) reduces the residual potential, but results in a photoreceptor with poor environmental resistance and stability over time.

〈発明の目的〉 本発明は上記の事項に鑑み、表面保護層に多量の第■族
元素を添加し、上記のケイ素Ｓｉの組成比Ｘが小さくて
も残留電位が小さい光導電材に！供することを目的とす
る。<Object of the Invention> In view of the above-mentioned matters, the present invention adds a large amount of group Ⅰ elements to the surface protective layer to create a photoconductive material that has a small residual potential even if the silicon composition ratio X is small! The purpose is to provide

〈実施例〉 以下、本発明を実施例に即して述べる。具体的な本発明
の実施例に係る光導電材の構造を第１図に掲げた。<Examples> The present invention will be described below based on examples. The structure of a photoconductive material according to a specific example of the present invention is shown in FIG.

同図において、３０１が光導電材であり、３層構造即ち
上（表面側）から表面保護層３０３、光導電層３０２及
び導電性支持体３０４を有した積層構造を成している。In the figure, 301 is a photoconductive material, which has a three-layer structure, that is, a laminated structure including a surface protective layer 303, a photoconductive layer 302, and a conductive support 304 from the top (front side).

そして、上記光導電層３０２は酸素を含む非晶質シリコ
ンで成り、上記表面保護層３０３は第１１１族元素をｌ
Ｏ〜１０　ａｔｏｍｉｃ％含有する。The photoconductive layer 302 is made of amorphous silicon containing oxygen, and the surface protection layer 303 is made of a group 111 element.
Contains 0 to 10 atomic%.

ここで、本発明の界雄側に係る光導電材の製造方法につ
き解説する。Here, a method for manufacturing a photoconductive material according to the Kaiyu side of the present invention will be explained.

第２図に示す装置を用い以下の様にしてａ−５ｉ層（非
晶質シリコン層）を形成した。An a-5i layer (amorphous silicon layer) was formed using the apparatus shown in FIG. 2 in the following manner.

クロロセン超音波洗浄槽及び蒸気洗浄槽（図示せず）に
て充分に表面を洗浄した直径１４０ス長さ３４０ｍｍの
アルミニウム支持体２を用意し、該アルミニウム支持体
２をドラムヒーター３に固定した。該ドラムヒーター３
は前記アルミニウム支持体２の内径に密着する外径を有
し、表面を均一加熱する。An aluminum support 2 with a diameter of 140 mm and a length of 340 mm was prepared, the surface of which had been thoroughly cleaned in a chlorocene ultrasonic cleaning tank and a steam cleaning tank (not shown), and the aluminum support 2 was fixed to a drum heater 3. The drum heater 3
has an outer diameter that closely contacts the inner diameter of the aluminum support 2, and uniformly heats the surface.

同図にて、９はメカニカルブースタポンプ、ｌＯはロー
タリポンプであ２す、５け小窓、７は駆動用モーター、
１１はリークバルブでるる。In the same figure, 9 is a mechanical booster pump, 1O is a rotary pump, 2 is a 5-digit small window, 7 is a drive motor,
11 is the leak valve.

次に、バルブ８を開き、反応室１内の空気を排除し、同
時に前記ドラムヒーター３をＯＮにした。Next, the valve 8 was opened to remove the air in the reaction chamber 1, and at the same time the drum heater 3 was turned on.

こうして、前記アルミニウム支持体２の表面が２５０℃
になるまで温度を上昇させ、その後恒温状態全保持した
。In this way, the surface of the aluminum support 2 is heated to 250°C.
The temperature was raised until it reached , and then the constant temperature was maintained throughout.

続いて、補助バルブ１２を全開にし、そして、Ｓ　ｊＨ
４ガスの充填されたボンベ２３、Ｈ２ガスの充填された
ボンベ２４及びＨ２ガス中に濃度４００ｐｐｍで混合さ
れたＢ２Ｈ６（ジボラン）ガスの充填されたボンベ２５
を、夫々の付属バルブ１８゜１９、２０を開放すること
により各ガスを流出させる。その際、前記ボンベ２３．
２４．２５に接続された質量流量調節器１３，１４．１
５の設定値を徐々に上ケて各ボンベ２３，２４．２５か
らガスが所定量はど流れる様に調整した。Subsequently, the auxiliary valve 12 is fully opened, and S jH
A cylinder 23 filled with 4 gases, a cylinder 24 filled with H2 gas, and a cylinder 25 filled with B2H6 (diborane) gas mixed in H2 gas at a concentration of 400 ppm.
By opening the respective attached valves 18, 19, 20, each gas is allowed to flow out. At that time, the cylinder 23.
Mass flow regulator 13, 14.1 connected to 24.25
The set value of 5 was gradually increased so that a predetermined amount of gas would flow from each cylinder 23, 24, and 25.

この時、前記バルブ８の開度を調節することにより前記
反応室ｌ内の圧力を１．５Ｔｏｒｒに保った。At this time, the pressure inside the reaction chamber 1 was maintained at 1.5 Torr by adjusting the opening degree of the valve 8.

続いて、高周波電源６のスイッチをＯＮにし、相対向す
る１対の放電電極４．４′間に周波数１３．５６ＭＨｚ
の高周波電圧を印加してグロー放電を起こし、加熱され
た前記アルミニウム支持体２上にａ−５ｉ膜を形成した
。なお、成膜時の高周波電力は常時４００Ｗに制御した
。Next, the switch of the high frequency power supply 6 is turned on, and a frequency of 13.56 MHz is applied between the pair of opposing discharge electrodes 4.4'.
A high frequency voltage was applied to generate a glow discharge, and an a-5i film was formed on the heated aluminum support 2. Note that the high frequency power during film formation was always controlled to 400W.

ところで、上記のａ−５ｉ膜形成の際、Ｂ２Ｈ６の濃度
はＳｉＨ４との濃度比が１０　となる様にＨ２ベースの
Ｂ２Ｈ６ガス流量は前記質量流量調節器１５にて調整し
た。このＢ２Ｈ６は膜の伝導型を制御するために添加さ
れるが、添加量が多い場合はｐ型、ｐ十型となり、添加
量が少ない場合はｎ型、ｉ型となる。一方、暗抵抗比及
び光感度に関しては、微量の０２　ガス全添加すること
により所定の値にできる。これは当業者か、適宜、所望
の膜特性に応じて決定できる事項である。By the way, when forming the above a-5i film, the flow rate of the H2-based B2H6 gas was adjusted by the mass flow controller 15 so that the concentration ratio of B2H6 to SiH4 was 10. This B2H6 is added to control the conductivity type of the film, and when the amount added is large, the film becomes p-type or p-type, and when the amount added is small, it becomes n-type or i-type. On the other hand, the dark resistance ratio and photosensitivity can be set to predetermined values by adding a small amount of 02 gas. This is a matter that can be determined by a person skilled in the art or as appropriate depending on the desired film properties.

この状態で約８時開成膜を続行した０ 今度は、表面保護層を形成すべく各ガスの混合比を変化
させる。即ち、０２カス全添加するため０□　ガスの充
填されたボンベ２８を付属のバルブ２９を開とし且つ補
助バルブ３１も開とし、質量流量調節器３０にて所定量
の０２　ガスを前記反応室１へ導入した。同時に、Ｂ２
Ｈ６を大量に添加するため、Ｉ］２　ガス中に濃度１％
で混合されたＢ２■Ｊ６ガスの充填されたポンベ２６の
バルブ２１を開とし、該ボンベ２６からのＢ２Ｈ６カス
の流量を調節する質量流量調節器１６を調節し同時に前
記質量流量調節器１５を流量０にしてＢ２Ｈ６ガスを前
記反応室ｌへ導入した。In this state, the film formation was continued at about 8 o'clock.0 Next, the mixing ratio of each gas was changed in order to form a surface protective layer. That is, in order to add all the 02 gas, the attached valve 29 of the cylinder 28 filled with 0□ gas is opened, and the auxiliary valve 31 is also opened, and a predetermined amount of 02 gas is supplied to the reaction chamber 1 using the mass flow controller 30. It was introduced to At the same time, B2
Since a large amount of H6 is added, the concentration of I]2 gas is 1%.
Open the valve 21 of the pump 26 filled with the B2J6 gas mixed in the cylinder 26, adjust the mass flow regulator 16 that adjusts the flow rate of the B2H6 gas from the cylinder 26, and at the same time adjust the mass flow regulator 15 to the flow rate. 0, and B2H6 gas was introduced into the reaction chamber 1.

なお、上述の表面保護層の形成の際に導入される０２ガ
スの量は、絶縁性の高い膜を所望する場合には、体積比
で、 ０２　／　Ｓ　ｉＦ（４二０．５〜２０と設定し、逆に
、光導電性の高い膜を所望する場合には、体積比で、 ０　／　Ｓ　Ｉ　Ｈ４−０，０１〜０５と設定すれば良
い。Note that the amount of 02 gas introduced when forming the above-mentioned surface protective layer is 02 / SiF (420.5 to 20) in volume ratio when a highly insulating film is desired. Conversely, if a film with high photoconductivity is desired, the volume ratio may be set to 0/SI H4-0.01 to 05.

上記の様にして約５分間表面保護層を形成し、前記高周
波電源６のスイッチ−１ＯＦＦとし、各ガスのバルブ１
３，１４．１６．３０を閉にして、再び前記反応室ｌ内
を真空にして、前記ドラムヒーター３のスイッチを開と
し徐冷した後、ａ−５ｉ膜が形成されたところのアルミ
ニウム支持体２を取り出す。After forming a surface protective layer for about 5 minutes as described above, the high frequency power source 6 is turned off, and each gas valve 1 is turned off.
3, 14. 16. 30 was closed, the inside of the reaction chamber 1 was evacuated again, and the switch of the drum heater 3 was opened to slowly cool the aluminum support on which the a-5i film was formed. Take out 2.

なお、上記アルミニウム支持体２を取り出した後、ＣＦ
４（ラトラフルオロメタン）ガスの充填されたポンベ２
７を付属のバルブ２２を開放して、その流量は質量流量
調整器１７で制御して、前記反応室ｌ内に流し込み、該
反応室１金洗浄した。Note that after taking out the aluminum support 2, the CF
4 (Latrafluoromethane) gas filled pump 2
7 was flowed into the reaction chamber 1 by opening the attached valve 22 and controlling the flow rate with the mass flow regulator 17, and the reaction chamber 1 was washed with gold.

以上の手順にて表面保護層における０２量、Ｂ２Ｈ６量
を種々変えて８種の試料（サンプル）を作製した。Using the above procedure, eight types of samples were prepared by varying the amount of 02 and B2H6 in the surface protective layer.

この作製した８種の試料（サンプル）を、第３図に示す
電子写真プロセスによム電子写真特性、耐環境特性及び
経時安定性につき調へた。その結果は下表の通りとなっ
た０ 第１表は８種の試料（試料番号Ｎｏ、１．２．３゜４、
５．６．７．８）のケイ素原子に対するホウ素原子のａ
ｔｏｍｉｃ％（Ｂ／Ｓｉ）及びその表面保護層のガス比
（酸素ガス対水素化ケイ素ガス比０２／ＳｉＨ４並ひに
ジボランガス対水素化ケイ素ガス比Ｂ２Ｈ６／５ｉＨ４
）を、第２表は該８種の試料の物性を表わす０ 第１表 第２表 （注）◎：テスト結果が初期特性と変わらず優秀Ｏ：良 △：可 ×：不可 上表の耐環特性は、特に高温高湿環境下での電子写真特
性を繰ジ返し、安定性の意味も含めである。又、上表の
経時安定性は、試料（サンプル）作製後１１日経過した
電子写真特性を初期の電子写真特性と比較したものであ
る。The eight types of samples thus produced were examined for electrophotographic properties, environmental resistance properties, and stability over time using the electrophotographic process shown in FIG. The results are as shown in the table below. Table 1 shows 8 types of samples (sample number No. 1.2.3°4,
5.6.7.8) a of the boron atom for the silicon atom
tomic% (B/Si) and the gas ratio of its surface protective layer (oxygen gas to silicon hydride gas ratio 02/SiH4 and diborane gas to silicon hydride gas ratio B2H6/5iH4
), Table 2 shows the physical properties of the eight types of samples. The ring properties include repeated electrophotographic properties, especially in high temperature and high humidity environments, and also include stability. In addition, the stability over time in the above table is a comparison of the electrophotographic properties 11 days after sample preparation with the initial electrophotographic properties.

なお、上記の電子写真プロセスとは第３図の通ジ、光導
電部材が表面にコーティングされたドラム５０８上に１
次帯電器（６，［）ＫＶ）５０１にて電圧を印加し、前
記ドラム５０８上にレンズ５０２（ｉ！光系の一部であ
る。）を通過した像を露光して、該露光像を現像器５０
３にて現像し、その像を転写紙５０４に転写用帯電器５
０５により転写する工程及び転写後肢ドラム５０８’！
ｚクリーニング装首５０５で清掃すること並ひに除電光
源５０７にて除電を行う工程のことである。The above-mentioned electrophotographic process is as shown in FIG.
Next, a voltage is applied by the charger (6, [) KV) 501, and the image that has passed through the lens 502 (which is part of the i! optical system) is exposed onto the drum 508, and the exposed image is Developing device 50
3, and the image is transferred to a transfer paper 504 using a charger 5.
05 and the transfer hind drum 508'!
This is the process of cleaning with the Z cleaning neck 505 and eliminating static electricity with the static eliminating light source 507.

これら表より、表面保護層には０２が多量に添加されて
いる方が耐環境特性並びに経時安定性ＶＣおいて優れて
いることが明らかとなる。From these tables, it is clear that the surface protective layer containing a large amount of 02 is superior in terms of environmental resistance and stability over time VC.

又、Ｂ２Ｈ６／ＳｉＨ４の値が小さい場合は残留電位か
大きく好ましくないが、Ｂ２Ｈ６／ＳｉＨ４の値が大き
くなると残留電位が減少し優れたものとなる。Further, when the value of B2H6/SiH4 is small, the residual potential is large, which is undesirable, but when the value of B2H6/SiH4 is large, the residual potential is reduced and is excellent.

他方、０２が少量しか含まれていないと、表面電位、耐
環境特性及び経時安定性において劣悪なものしか得られ
ない。On the other hand, if only a small amount of 02 is contained, only a poor surface potential, poor environmental resistance, and poor stability over time will be obtained.

上記８つの試料（サンプル）の中でＮｏ。１゜Ｎ００２
及びＮｏ。３のものが最適であり、該ＮＯ，ｌ。No. out of the above 8 samples. 1゜N002
and no. 3 is optimal, and the NO,l.

ＮＯ，２及びＮｏ、３の試料（サンプル）のＢ（ホウ素
）のＳｉ（ケイ素）に対する原子（ａｔｏｍｉｃ）％は
ＩＭ、Ａ（イオンマイクロアナリシス）によると、夫々
、Ｏ，Ｕｏ　１．０．０１．０．１であり、このＢ／Ｓ
ｉが１０−３〜１０　’　ａｔｏｍｉｃ％の範囲にある
ことが好ましいと判ｒ！ｌ］シた。もちろん、この酸素
とＢ２Ｈ６のガス混合比を要望により適宜選択すること
は当業者（研究者）にとって容易な事項である。According to IM and A (ion microanalysis), the atomic % of B (boron) to Si (silicon) in samples NO.2 and No.3 is O and Uo 1.0.01, respectively. .0.1, and this B/S
It has been found that i is preferably in the range of 10-3 to 10' atomic%! l] Shita. Of course, it is easy for those skilled in the art (researchers) to appropriately select the gas mixture ratio of oxygen and B2H6 as desired.

なお、上記実施例においては表面保護層にＢ（ホウ素）
を含めたが、他の周期表第１Ｈ族元素でも同様であった
。In addition, in the above example, B (boron) is added to the surface protective layer.
was included, but the same was true for other Group 1H elements of the periodic table.

さらに、上記表面保護層は厚さを０．０１〜４．０／７
ｍにすると特性の同士が著しかった。Furthermore, the thickness of the surface protective layer is 0.01 to 4.0/7.
When m was used, the characteristics were significantly different.

伺言するに、本発明の光導電材は複写機、レーザプリン
タ等の光導電部材として広く利用されることが期待され
る。In other words, the photoconductive material of the present invention is expected to be widely used as a photoconductive member for copying machines, laser printers, and the like.

〈効果〉 以上の様に本発明の光導電材によれば、耐環境特性、経
時安定性に優れ、且つ、電荷保持能力が高く、残留電位
の少ない感光体を得ることができる０<Effects> As described above, according to the photoconductive material of the present invention, it is possible to obtain a photoreceptor that has excellent environmental resistance and stability over time, has a high charge retention ability, and has a low residual potential.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の適用される積層構造の光導電材の側断
面図、第２図は本発明の実施例に係る光導電材の製造装
置のブロック図、第３図は本発明の実施例に係る光導電
材の使用される電子写真装置のプロセスの説明に供する
図である。 １・・・反応室、２・・・アルミニウム支持体、３・・
・ドラムヒーター、４’、４’・・・放電電極、５・・
小窓、６・・・高周波電源、７・・・駆動用モーター、
８・・・バルブ。 ９・・・メカニカルブースタポンプ、１０・−ロータリ
ポンプ、１１・・・リークバルブ、１２・・・補助バル
ブ。 １３、１４．１５．１６．１７・・・質量流量調整器、
１８，１９゜２０．２１．２２・・・付属バルブ、　２
３．２４．２５．２６゜２７、２８・・・ボンベ、２９
・・・付属バルブ、３０・・・質量流量調整器、３１・
・・補助バルブ、１０１・・・１次帯電器、】０２・・
・レンズ、１０３・・ｆｆｌ像！、１０４・転写紙、＋
０５・転写用帯電器、１０６・クリーニング装置、１ｏ
７・除電光源、１ｏ８・・・ドラム、３０Ｉ・・光導電
層、３ｏ２・・・光導電層、３ｏ３・・・表面保穫層、
３ｏ４・・・導電性支持体。FIG. 1 is a side cross-sectional view of a photoconductive material having a laminated structure to which the present invention is applied, FIG. 2 is a block diagram of a photoconductive material manufacturing apparatus according to an embodiment of the present invention, and FIG. 3 is a diagram illustrating an embodiment of the present invention. FIG. 3 is a diagram illustrating a process of an electrophotographic apparatus in which such a photoconductive material is used. 1... Reaction chamber, 2... Aluminum support, 3...
・Drum heater, 4', 4'...discharge electrode, 5...
Small window, 6... High frequency power supply, 7... Drive motor,
8...Valve. 9... Mechanical booster pump, 10... Rotary pump, 11... Leak valve, 12... Auxiliary valve. 13, 14.15.16.17...Mass flow regulator,
18,19゜20.21.22... Attached valve, 2
3.24.25.26°27, 28...Cylinder, 29
... Attached valve, 30... Mass flow regulator, 31.
...Auxiliary valve, 101...Primary charger, ]02...
・Lens, 103...ffl image! , 104・Transfer paper, +
05・Transfer charger, 106・Cleaning device, 1o
7. Static elimination light source, 1o8... drum, 30I... photoconductive layer, 3o2... photoconductive layer, 3o3... surface protection layer,
3o4... Conductive support.

Claims (1)

【特許請求の範囲】 １、導電性支持部材と、前記支持部材上に形成された光
導電層と、前記光導電層の表面に設けられた少なくとも
酸素を含む非晶質シリコンより成る光導電材において、
該表面保護層は第■族元素をケイ素元素との比でｌＯ〜
１０　ａｔｏｍｉｃ％含有することを特徴とする光導電
材。 ２　上記第ｉｌｌ族元素はホウ素Ｂであることを特徴と
する特許請求の範囲第り項記載の光導電材。 ３　上記表面保護層の厚さが０．０１〜４０μｍである
ことを特徴とする特許請求の範囲第１項記載の光導電材
。 ４、　自由表面が正に帯電し、感光性を有すること全特
徴とする特許請求の範囲第１項記載の光導電材。[Scope of Claims] 1. A photoconductive material comprising an electrically conductive support member, a photoconductive layer formed on the support member, and amorphous silicon containing at least oxygen provided on the surface of the photoconductive layer. ,
The surface protective layer contains Group Ⅰ elements in a ratio of 1O~ to silicon element.
A photoconductive material containing 10 atomic%. 2. The photoconductive material according to claim 1, wherein the Ill group element is boron B. 3. The photoconductive material according to claim 1, wherein the surface protective layer has a thickness of 0.01 to 40 μm. 4. The photoconductive material according to claim 1, wherein the free surface is positively charged and photosensitive.
JP59049676A 1984-02-28 1984-03-14 Photoconductive member Pending JPS60192955A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59049676A JPS60192955A (en) 1984-03-14 1984-03-14 Photoconductive member
DE3546544A DE3546544C2 (en) 1984-02-28 1985-02-26
DE19853506657 DE3506657A1 (en) 1984-02-28 1985-02-26 PHOTO-CONDUCTIVE DEVICE
US06/706,669 US4632894A (en) 1984-02-28 1985-02-28 Photoconductive device having photoconductive layer containing hydroxyl radicals
US06/786,046 US4683186A (en) 1984-02-28 1985-10-10 Doped amorphous silicon photoconductive device having a protective coating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59049676A JPS60192955A (en) 1984-03-14 1984-03-14 Photoconductive member

Publications (1)

Publication Number Publication Date
JPS60192955A true JPS60192955A (en) 1985-10-01

Family

ID=12837774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59049676A Pending JPS60192955A (en) 1984-02-28 1984-03-14 Photoconductive member

Country Status (1)

Country Link
JP (1) JPS60192955A (en)

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